US3694972A - Method and apparatus for subdividing a crystal wafer - Google Patents

Method and apparatus for subdividing a crystal wafer Download PDF

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Publication number
US3694972A
US3694972A US50181A US5018170A US3694972A US 3694972 A US3694972 A US 3694972A US 50181 A US50181 A US 50181A US 5018170 A US5018170 A US 5018170A US 3694972 A US3694972 A US 3694972A
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US
United States
Prior art keywords
wafer
slits
slit
griddle
sand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US50181A
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English (en)
Inventor
Reimer Emeis
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Individual
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Individual
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Publication date
Priority claimed from DE19691931335 external-priority patent/DE1931335C3/de
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Publication of US3694972A publication Critical patent/US3694972A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C3/00—Abrasive blasting machines or devices; Plants
    • B24C3/32—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
    • B24C3/322—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks for electrical components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Definitions

  • I perform the above-described method with the aid of a device which has a griddle whose supporting surface for the crystalline wafer is provided with crosswise arrays of parallel slits, the device further comprising a group of metal combs which form a crosswise design matching that of the slitted griddle and which are stationarily fixed in a frame.
  • a griddle arrangement particularly simple to manufacture is made of a metal block which has crosswise parallel incisions at the supporting surface for the crystalline wafer and whose bottom is traversed by exhaust bores communicating with the incisions.
  • FIG. 2 is a perspective view of the griddle structure in apparatus according to FIG. 1.
  • FIG. 4 is a vertical section through FIG. 3, the lefthand portion of FIG. 4 being sectioned along the line A-B, and the right-hand portion of FIG. 4 being sectioned along the line B-C of FIG. 2.
  • FIG. 5 is a schematic and perspective view of another embodiment of a griddle applicable in apparatus otherwise corresponding to FIG. 1.
  • the supporting surface 8 on top of the griddle 5 is preferably lapped to planar shape.
  • Four crystal slices or wafers 9 which, for simplicity, are shown only by dotand-dash lines, are placed face-to-face on top of the griddle.
  • the wafers 9 are preferably cemented by cellulose varnish to the supporting surface 8 which is only slightly roughened by the lapping treatment.
  • the crystal wafers 9, for example, may consist of silicon and may have metal coatings on their main faces so as to contain a sequence of zones having alternately different conductivity types and extending parallel to the main faces. It is the purpose of the apparatus shown in FIG. 1 to separate the silicon wafers 9 into a multiplicity of small silicon components for electronic semiconductor purposes.
  • a strip-shaped spacer 16 is arranged on both sides of the griddle 5. Each spacer is located between two combs IS. The spacer strips thus provide for slits 21 which are parallel to the combs and interrupt the supporting surface 8.
  • the section B-C shown in FIG. 4 indicates that the interspaces between the individual teeth of the combs I5 form further slits 24 perpendicular to the combs 15.
  • the sandblasting device 10 may also be provided with several jet nozzles 11' located beside one another, as shown in FIG. 6, so that simultaneously several parallel cuts can be passed through the crystal wafers 9.
  • the crosswise parallel incisions 32 and 33 extend downward to approximately one-half the height of the metal block 31.
  • the bottom portion of the block 31 is provided with suction bores 34 which preferably are arranged precisely beneath the intersection points of the crosswise parallel incisions 32, 33.
  • the griddle according to FIGS. 5 and 6 can be fastened, in the same manner as the griddle 5 of F IG. 2, above the suction opening 3 on the support 2.
  • the method of subdividing a thin semiconductive crystal wafer into individual semiconductor members by forming cuts in the wafer perpendicularly to the faces thereof which comprises cementing a face of the wafer onto a planar support formed with an array of slits extending in direction in which the cuts are to be formed in the wafer, disposing a sandblast nozzle having an elongated outlet opening, that is narrower than the width of the slits formed in the support directly above the opposite face of the wafer and in alignment with one of the slits, blasting a jet of sand having a grain size of substantially ID to 30 p.
  • the slits are arranged in parallel criss-cross relationship, and which comprises disposing a plurality of the sandblast nozzles in alignment with a corresponding plurality of the slits, blasting a corresponding plurality of jets of the sand from the nozzles onto the wafer along the respective plurality of slits, and then passing the plurality of the nozzles along the respective slits to form severing cuts 5 in the wafer, and simultaneously sucking the sand accumulating in the respective slits out of the same.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
US50181A 1969-06-20 1970-06-26 Method and apparatus for subdividing a crystal wafer Expired - Lifetime US3694972A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691931335 DE1931335C3 (de) 1969-06-20 Verfahren zum Abtrennen eines Körpers von einem scheibenförmigen Kristall und Vorrichtung zur Durchführung dieses Verfahrens

Publications (1)

Publication Number Publication Date
US3694972A true US3694972A (en) 1972-10-03

Family

ID=5737534

Family Applications (1)

Application Number Title Priority Date Filing Date
US50181A Expired - Lifetime US3694972A (en) 1969-06-20 1970-06-26 Method and apparatus for subdividing a crystal wafer

Country Status (9)

Country Link
US (1) US3694972A (https=)
JP (1) JPS5013510B1 (https=)
AT (1) AT315241B (https=)
CH (1) CH504783A (https=)
FR (1) FR2046967B1 (https=)
GB (1) GB1259249A (https=)
NL (1) NL7008966A (https=)
SE (1) SE351523B (https=)
ZA (1) ZA704234B (https=)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3778935A (en) * 1972-01-26 1973-12-18 Pennwalt Corp Abrading apparatus with rotary index table
US3866357A (en) * 1974-06-06 1975-02-18 Pennwalt Corp Abrading apparatus
US3888054A (en) * 1973-11-16 1975-06-10 Western Electric Co Method for abrasive cutting in a liquid
US3953941A (en) * 1973-10-11 1976-05-04 Bbc Brown Boveri & Company Limited Method and apparatus for making a groove in a semi-conductor element
US4047286A (en) * 1975-05-20 1977-09-13 Siemens Aktiengesellschaft Process for the production of semiconductor elements
US4738056A (en) * 1984-12-28 1988-04-19 Fuji Seiki Machine Works, Ltd. Method and blasting apparatus for preparation of silicon wafer
US5052155A (en) * 1989-08-10 1991-10-01 Emc Technology, Inc. Apparatus for the treatment of articles by high velocity impacting thereof with a particulate abrasive material
US5505653A (en) * 1992-10-17 1996-04-09 Saechsische Werkzeug Und Sondermaschinen Gmbh Abrasive/water jet cutting apparatus
US6676486B1 (en) * 2000-10-20 2004-01-13 Lightwave Microsystems Corporation Polymeric chemical injection into a water jet to improve cut quality while cutting very brittle materials
WO2004025724A1 (en) * 2002-09-13 2004-03-25 Towa-Intercon Technology, Inc. Jet singulation of a substrate
US20050126472A1 (en) * 2002-09-13 2005-06-16 Towa Intercon Technology, Inc. Jet singulation
US20060180579A1 (en) * 2005-02-11 2006-08-17 Towa Intercon Technology, Inc. Multidirectional cutting chuck
SG131836A1 (en) * 2005-09-22 2007-05-28 Towa Corp Cutting apparatus
US20070170597A1 (en) * 2003-08-18 2007-07-26 Markus Vos Process for producing components
EP1873824A1 (en) * 2002-09-13 2008-01-02 Towa-Intercon Technology, Inc. Jet singulation of a substrate
US20080282855A1 (en) * 2007-05-16 2008-11-20 Disco Corporation Water jet cutting method
US20090013839A1 (en) * 2007-06-14 2009-01-15 Disco Corporation Water jet processing method
US20130303053A1 (en) * 2012-05-08 2013-11-14 Fuji Manufacturing Co., Ltd Method and device for cutting out hard-brittle substrate

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4702042A (en) * 1984-09-27 1987-10-27 Libbey-Owens-Ford Co. Cutting strengthened glass
CA1252711A (en) * 1984-09-27 1989-04-18 Richard A. Herrington Ultra-high pressure abrasive jet cutting of glass
US4656791A (en) * 1984-09-27 1987-04-14 Libbey-Owens-Ford Company Abrasive fluid jet cutting support

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US587892A (en) * 1897-08-10 M a t iiia s w a l t e k
US1664159A (en) * 1926-04-23 1928-03-27 Elroy A Chase Apparatus for producing ornamental background on stone
GB794528A (en) * 1955-10-07 1958-05-07 William Howard Mead Improvements in receivers for particulate material
US3187412A (en) * 1963-04-26 1965-06-08 Gen Electric Method of mounting and aligning transducers on delay lines
US3205104A (en) * 1961-07-10 1965-09-07 Litton Industries Inc Fabrication of interdigital delay lines
US3262234A (en) * 1963-10-04 1966-07-26 Int Rectifier Corp Method of forming a semiconductor rim by sandblasting
US3453781A (en) * 1966-03-30 1969-07-08 Ibm Tailoring microminiature components
US3516204A (en) * 1967-08-21 1970-06-23 Pennwalt Corp Abrading apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US587892A (en) * 1897-08-10 M a t iiia s w a l t e k
US1664159A (en) * 1926-04-23 1928-03-27 Elroy A Chase Apparatus for producing ornamental background on stone
GB794528A (en) * 1955-10-07 1958-05-07 William Howard Mead Improvements in receivers for particulate material
US3205104A (en) * 1961-07-10 1965-09-07 Litton Industries Inc Fabrication of interdigital delay lines
US3187412A (en) * 1963-04-26 1965-06-08 Gen Electric Method of mounting and aligning transducers on delay lines
US3262234A (en) * 1963-10-04 1966-07-26 Int Rectifier Corp Method of forming a semiconductor rim by sandblasting
US3453781A (en) * 1966-03-30 1969-07-08 Ibm Tailoring microminiature components
US3516204A (en) * 1967-08-21 1970-06-23 Pennwalt Corp Abrading apparatus

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3778935A (en) * 1972-01-26 1973-12-18 Pennwalt Corp Abrading apparatus with rotary index table
US3953941A (en) * 1973-10-11 1976-05-04 Bbc Brown Boveri & Company Limited Method and apparatus for making a groove in a semi-conductor element
US3888054A (en) * 1973-11-16 1975-06-10 Western Electric Co Method for abrasive cutting in a liquid
US3866357A (en) * 1974-06-06 1975-02-18 Pennwalt Corp Abrading apparatus
US4047286A (en) * 1975-05-20 1977-09-13 Siemens Aktiengesellschaft Process for the production of semiconductor elements
US4738056A (en) * 1984-12-28 1988-04-19 Fuji Seiki Machine Works, Ltd. Method and blasting apparatus for preparation of silicon wafer
US5052155A (en) * 1989-08-10 1991-10-01 Emc Technology, Inc. Apparatus for the treatment of articles by high velocity impacting thereof with a particulate abrasive material
US5505653A (en) * 1992-10-17 1996-04-09 Saechsische Werkzeug Und Sondermaschinen Gmbh Abrasive/water jet cutting apparatus
US6676486B1 (en) * 2000-10-20 2004-01-13 Lightwave Microsystems Corporation Polymeric chemical injection into a water jet to improve cut quality while cutting very brittle materials
US6676485B1 (en) * 2000-10-20 2004-01-13 Lightwave Microsystems Corporation Wet injecting fine abrasives for water jet curved cutting of very brittle materials
WO2004025724A1 (en) * 2002-09-13 2004-03-25 Towa-Intercon Technology, Inc. Jet singulation of a substrate
US20050126472A1 (en) * 2002-09-13 2005-06-16 Towa Intercon Technology, Inc. Jet singulation
US20050145166A1 (en) * 2002-09-13 2005-07-07 Towa Intercon Tools, Inc. Jet singulation
US7059940B2 (en) 2002-09-13 2006-06-13 Towa Intercon Technology, Inc. Jet singulation
US20060194514A1 (en) * 2002-09-13 2006-08-31 Towa Intercon Technology, Inc., A California Corporation Jet singulation
US7153186B2 (en) 2002-09-13 2006-12-26 Towa Intercon Technology, Inc. Jet singulation
EP1873824A1 (en) * 2002-09-13 2008-01-02 Towa-Intercon Technology, Inc. Jet singulation of a substrate
US7357694B2 (en) 2002-09-13 2008-04-15 Towa Corporation Jet singulation
US7736995B2 (en) 2003-08-18 2010-06-15 Schott Ag Process for producing components
CN1835823B (zh) * 2003-08-18 2011-02-09 肖特股份公司 制造元件的方法
US20070170597A1 (en) * 2003-08-18 2007-07-26 Markus Vos Process for producing components
US20060180579A1 (en) * 2005-02-11 2006-08-17 Towa Intercon Technology, Inc. Multidirectional cutting chuck
SG131836A1 (en) * 2005-09-22 2007-05-28 Towa Corp Cutting apparatus
US20080282855A1 (en) * 2007-05-16 2008-11-20 Disco Corporation Water jet cutting method
US20090013839A1 (en) * 2007-06-14 2009-01-15 Disco Corporation Water jet processing method
US7585201B2 (en) * 2007-06-14 2009-09-08 Disco Corporation Water jet processing method
US20130303053A1 (en) * 2012-05-08 2013-11-14 Fuji Manufacturing Co., Ltd Method and device for cutting out hard-brittle substrate
US9333624B2 (en) * 2012-05-08 2016-05-10 Fuji Manufacturing Co., Ltd Method and device for cutting out hard-brittle substrate and protecting regions on the substrate
US20160243673A1 (en) * 2012-05-08 2016-08-25 Fuji Manufacturing Co., Ltd Method and device for cutting out hard-brittle substrate
US10071462B2 (en) * 2012-05-08 2018-09-11 Fuji Manufacturing Co., Ltd. Method and device for cutting out hard-brittle substrate

Also Published As

Publication number Publication date
GB1259249A (https=) 1972-01-05
ZA704234B (en) 1971-03-31
JPS5013510B1 (https=) 1975-05-20
FR2046967A1 (https=) 1971-03-12
AT315241B (de) 1974-05-10
NL7008966A (https=) 1970-12-22
CH504783A (de) 1971-03-15
DE1931335A1 (de) 1970-12-23
SE351523B (https=) 1972-11-27
DE1931335B2 (de) 1976-03-11
FR2046967B1 (https=) 1974-09-20

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