US3694972A - Method and apparatus for subdividing a crystal wafer - Google Patents
Method and apparatus for subdividing a crystal wafer Download PDFInfo
- Publication number
- US3694972A US3694972A US50181A US5018170A US3694972A US 3694972 A US3694972 A US 3694972A US 50181 A US50181 A US 50181A US 5018170 A US5018170 A US 5018170A US 3694972 A US3694972 A US 3694972A
- Authority
- US
- United States
- Prior art keywords
- wafer
- slits
- slit
- griddle
- sand
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000004576 sand Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000005422 blasting Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 43
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 210000001520 comb Anatomy 0.000 description 7
- 230000006378 damage Effects 0.000 description 6
- 238000005488 sandblasting Methods 0.000 description 6
- 102100027340 Slit homolog 2 protein Human genes 0.000 description 3
- 101710133576 Slit homolog 2 protein Proteins 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 241000231739 Rutilus rutilus Species 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C3/00—Abrasive blasting machines or devices; Plants
- B24C3/32—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
- B24C3/322—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks for electrical components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Definitions
- I perform the above-described method with the aid of a device which has a griddle whose supporting surface for the crystalline wafer is provided with crosswise arrays of parallel slits, the device further comprising a group of metal combs which form a crosswise design matching that of the slitted griddle and which are stationarily fixed in a frame.
- a griddle arrangement particularly simple to manufacture is made of a metal block which has crosswise parallel incisions at the supporting surface for the crystalline wafer and whose bottom is traversed by exhaust bores communicating with the incisions.
- FIG. 2 is a perspective view of the griddle structure in apparatus according to FIG. 1.
- FIG. 4 is a vertical section through FIG. 3, the lefthand portion of FIG. 4 being sectioned along the line A-B, and the right-hand portion of FIG. 4 being sectioned along the line B-C of FIG. 2.
- FIG. 5 is a schematic and perspective view of another embodiment of a griddle applicable in apparatus otherwise corresponding to FIG. 1.
- the supporting surface 8 on top of the griddle 5 is preferably lapped to planar shape.
- Four crystal slices or wafers 9 which, for simplicity, are shown only by dotand-dash lines, are placed face-to-face on top of the griddle.
- the wafers 9 are preferably cemented by cellulose varnish to the supporting surface 8 which is only slightly roughened by the lapping treatment.
- the crystal wafers 9, for example, may consist of silicon and may have metal coatings on their main faces so as to contain a sequence of zones having alternately different conductivity types and extending parallel to the main faces. It is the purpose of the apparatus shown in FIG. 1 to separate the silicon wafers 9 into a multiplicity of small silicon components for electronic semiconductor purposes.
- a strip-shaped spacer 16 is arranged on both sides of the griddle 5. Each spacer is located between two combs IS. The spacer strips thus provide for slits 21 which are parallel to the combs and interrupt the supporting surface 8.
- the section B-C shown in FIG. 4 indicates that the interspaces between the individual teeth of the combs I5 form further slits 24 perpendicular to the combs 15.
- the sandblasting device 10 may also be provided with several jet nozzles 11' located beside one another, as shown in FIG. 6, so that simultaneously several parallel cuts can be passed through the crystal wafers 9.
- the crosswise parallel incisions 32 and 33 extend downward to approximately one-half the height of the metal block 31.
- the bottom portion of the block 31 is provided with suction bores 34 which preferably are arranged precisely beneath the intersection points of the crosswise parallel incisions 32, 33.
- the griddle according to FIGS. 5 and 6 can be fastened, in the same manner as the griddle 5 of F IG. 2, above the suction opening 3 on the support 2.
- the method of subdividing a thin semiconductive crystal wafer into individual semiconductor members by forming cuts in the wafer perpendicularly to the faces thereof which comprises cementing a face of the wafer onto a planar support formed with an array of slits extending in direction in which the cuts are to be formed in the wafer, disposing a sandblast nozzle having an elongated outlet opening, that is narrower than the width of the slits formed in the support directly above the opposite face of the wafer and in alignment with one of the slits, blasting a jet of sand having a grain size of substantially ID to 30 p.
- the slits are arranged in parallel criss-cross relationship, and which comprises disposing a plurality of the sandblast nozzles in alignment with a corresponding plurality of the slits, blasting a corresponding plurality of jets of the sand from the nozzles onto the wafer along the respective plurality of slits, and then passing the plurality of the nozzles along the respective slits to form severing cuts 5 in the wafer, and simultaneously sucking the sand accumulating in the respective slits out of the same.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A body, such as a crystalline semiconductor body for the production of diodes, transistors, thyristors or other electronic components, is severed from a crystal wafer by placing the wafer face-to-face onto the surface of a griddle which has a slit along each cutting line. A sandblast is directed from a jet nozzle upon the top face of the wafer above the slit, and relative movement is imparted between griddle and jet nozzle in a direction lengthwise of the slit, simultaneously exhausting the sand out of the slit. In this manner, the crystal body is separated from the rest of the wafer along the slit. Preferably, the device for performing the method is provided with a griddle whose top surface has a group of parallel slits extending crosswise to another group of parallel slits, a comb structure, also with intersecting slits, being mounted above the griddle surface proper. Such apparatus is capable of simultaneously severing a multiplicity of individual bodies from a crystal wafer.
Description
United States Patent on 3,694,972
Emeis 51 Oct. 3, 1972 1541 mmron AND APPARATUS son SUBDIVIDING A CRYSTAL WAFER [7 21 Inventor: Reimer Emeis, Feuersteinstr. 12,
8553 Ebermannstadt, Germany [22] Filed: June 26, 1970 211 Appl. No.: 50,181
[52] US. Cl ..Sl/3l9, 51/8 [51] Int. Cl. ..B24b l/00, B24c 1/00 [58] Field of Search ..51/3l9, 320, 8
[56] References Cited UNITED STATES PATENTS 587,892 8/1897 Walter ..5l/8 X 1,664,159 3/1928 Chase ..5l/8 3,187,412 6/1965 Tiemann ..5l/319 X 3,205,104 9/1965 Sibley ..51/319 X 3,262,234 7/1966 Roach ..5l/320 3,453,781 7/1969 Greenman ..51/3l9 X 3,516,204 6/1970 Kulischenko ..5 1/8 FORElGN PATENTS OR APPLICATIONS 794,528 5/1958 Great Britain ..51/8
Primary Examiner-James L. Jones, Jr. Attorney-Curt M. Avery, Arthur E. Wilfond, Herbert L. Lerner and Daniel J. Tick ABSTRACT A body, such as a crystalline semiconductor body for the production of diodes, transistors, thyristors or other electronic components, is severed from a crystal wafer by placing the wafer face-to-face onto the surface of a griddle which has a slit along each cutting line. A sandblast is directed from a jet nozzle upon the top face of the wafer above the slit, and relative movement is imparted between griddle and jet nozzle in a direction lengthwise of the slit, simultaneously exhausting the sand out of the slit. In this manner, the crystal body is separated from the rest of the wafer along the slit. Preferably, the device for performing the method is provided with a griddle whose top surface has a group of parallel slits extending crosswise to another group of parallel slits, a comb structure, also with intersecting slits, being mounted above the griddle surface proper. Such apparatus is capable of simultaneously severing a multiplicity of individual bodies from a crystal wafer.
2 Claim, 6 Drawing Figures METHOD AND APPARATUS FOR SUBDIVIDING A CRYSTAL WAFER My invention relates to a method of severing crystalline bodies from a crystal slice or wafer.
In electrical appliances for industrial, kitchen and other purposes, it has become increasingly desirable to employ semiconductor circuit components whose power demand is relatively low and whose external dimensions, therefore, may be relatively small.
The use of such small-area semiconductor components in electrical appliances on the one hand, and the large number of these components required for such uses, are predicated upon the availability of particularly economical mass production methods. These must be of such character, however, as to avoid appreciable deleterious effect upon the properties, particularly the electrical qualities, of the semiconductor components produced. The electrical properties of a semiconductor component are particularly liable to be impaired when the crystalline body of this component is cut from a large-area crystalline slice or wafer that incorporates a sequence of parallel zones having alternate different types of conductivity parallel to the wafer main faces. When severing the semiconductor components by sawing or breaking, the separating edge and surface portion of the resulting bodies is subjected to deeply penetrating damage and destruction of the crystalline lattice structure which may virtually form short-circuits across the p-n junctions where these emerge at the surface so that the junctions no longer possess a sufficient if any blocking ability. Although the damaged crystal layers at the surface of the severed semiconductor components can be eliminated by etching, this method requires the use of acidic etchants, for example a mixture of hydrofluoric acid and nitric acid, as well as long periods of etching time so that any contact electrodes of metal on the semiconductor component are attacked by the etchant.
It is an object of my invention to devise a different method which, on the one hand, secures an improved economy of manufacture and, on the other hand, avoids or minimizes the occurrence of crystalline damage at the severing edges that require subsequent treatment by acidic etchant.
To this end, and in accordance with a feature of my invention, l sever a crystal body from a crystal slice or wafer by placing the wafer face-to-face onto a surface area of a griddle which is slitted in that area. I further direct from a nozzle a jet of sandblast upon the other face of the wafer above each slit and impart a relative motion between the griddle and the jet in a direction lengthwise of the slit. Simultaneously, I exhaust the sand out of the slit. As a result, the crystal body is severed from the wafer along the slit.
With such a method, the damages to the crystal lattice structure at the cutting edge of the bodies separated from the crystal wafer are extremely slight and can be removed within a minimum of time with the aid of alkaline etchants which do not attack any metal electrodes attached to the crystal bodies. Consequently, the blocking ability of any p-n junctions that may emerge at the severing faces remains fully effective or does not exhibit appreciable deterioration. Furthermore, cuts of a sharp contour are produced in the crystal wafers, and the edges of the separated bodies are free of broken-away localities.
According to further features of my invention, I perform the above-described method with the aid of a device which has a griddle whose supporting surface for the crystalline wafer is provided with crosswise arrays of parallel slits, the device further comprising a group of metal combs which form a crosswise design matching that of the slitted griddle and which are stationarily fixed in a frame.
According to another feature of the invention, a griddle arrangement particularly simple to manufacture is made of a metal block which has crosswise parallel incisions at the supporting surface for the crystalline wafer and whose bottom is traversed by exhaust bores communicating with the incisions.
The above-mentioned and further objects, advantages and features of my invention will be apparent from the following description of embodiments of processing equipment according to the invention illustrated by way of example on the accompanying drawings in which:
FIG. 1 is a lateral view of apparatus for severing crystal bodies from a crystal wafer.
FIG. 2 is a perspective view of the griddle structure in apparatus according to FIG. 1.
FIG. 3 shows on a larger scale a portion of the wafersupporting griddle surface corresponding to FIG. 2.
FIG. 4 is a vertical section through FIG. 3, the lefthand portion of FIG. 4 being sectioned along the line A-B, and the right-hand portion of FIG. 4 being sectioned along the line B-C of FIG. 2.
FIG. 5 is a schematic and perspective view of another embodiment of a griddle applicable in apparatus otherwise corresponding to FIG. 1.
FIG. 6 is a lateral view, partly in section, of a device according to FIG. 5, the section being taken along the line DD of FIG. 5.
The apparatus according to FIG. 1 comprises a support 2 with an opening 3 to which a downwardly extending exhaust pipe 4 is connected by means of a duct flange. Mounted on the support 2 above the exhaust opening 3 is a griddle 5. The griddle is fastened on the support 2 by two angle pieces 7 located opposite each other and entering into recesses 6 at correspondingly opposite lateral faces of the griddle 5. The angle pieces 7 are secured to the support 2 by mounting screws such as those visible in FIG. 2. The recesses 6 permit an adjustable fastening of the griddle 5 to the support 2.
The supporting surface 8 on top of the griddle 5 is preferably lapped to planar shape. Four crystal slices or wafers 9 which, for simplicity, are shown only by dotand-dash lines, are placed face-to-face on top of the griddle. The wafers 9 are preferably cemented by cellulose varnish to the supporting surface 8 which is only slightly roughened by the lapping treatment. The crystal wafers 9, for example, may consist of silicon and may have metal coatings on their main faces so as to contain a sequence of zones having alternately different conductivity types and extending parallel to the main faces. It is the purpose of the apparatus shown in FIG. 1 to separate the silicon wafers 9 into a multiplicity of small silicon components for electronic semiconductor purposes.
Mounted above the support 2 is a sandblasting device 10 with a jet nozzle 11 directed vertically toward the supporting surface 8 of the griddle 5. Preferably the nozzle 11 has a slot-shaped orifice. The
sandblasting device is adjustably mounted on a horizontal holder rod 12 and is connected at the top with a sandblast supply hose 14. The rod 12 is adjustably mounted on a holder structure 13 which can be displaced in the direction of the arrow 18 within the plane of illustration, and which can also be displaced in a direction perpendicular to the plane of illustration, each time in parallel relation to the supporting surface 8 of the griddle 5. As is shown in FIGS. 2 and 3, the griddle comprises a frame structure 5a in which a packet of identical metal combs are firmly clamped. The tips of the teeth on these metal combs 15, in totality, constitute the above-mentioned supporting surface 8 of the griddle for accommodating the crystal wafers 9.
The support 2 is rotatable in a plane parallel to the supporting surface 8. The support 2 has a lug projecting from the periphery. The angular movement of the lug is limited by two fixed stops 18 so that the support 2 can be turned a maximum angular amount of 90.
As will be seen from the section A-B in FIG. 4, a strip-shaped spacer 16 is arranged on both sides of the griddle 5. Each spacer is located between two combs IS. The spacer strips thus provide for slits 21 which are parallel to the combs and interrupt the supporting surface 8. The section B-C shown in FIG. 4 indicates that the interspaces between the individual teeth of the combs I5 form further slits 24 perpendicular to the combs 15.
After the crystal wafers 9 are cemented to the supporting surface 8 of the griddle 5, the sandblasting device is so set that the orifice of the blast nozzle 11 is located above one of the slits 21. When the holder 13 is shifted in the direction of the arrow 18 along the slit 21, starting from the frame 5a of the griddle 5 and moving at uniform speed, the sandblast cuts through two wafers 9 located above the slit 21. The sand of the blast is exhausted from beneath the griddle 5 through the slit 2] and the exhaust duct 4. This prevents the sand from backing up and collecting in the slit.
After thus producing the severing cut above the slit 2 I, the holder 13 is shifted perpendicularly to the plane of illustration (FIG. 1), Le. in the direction of the arrow 25 in FIG. 2, so that the orifice of the jet nozzle 11 is located above slit 21. Now the cutting operation is repeated, again starting from the frame 5a of the griddle 5 by shifting the holder 13 together with the sandblasting device in the direction of the arrow 18 along the other slit 2! at uniform speed. This produces another severing cut through two crystal wafers 9.
After the cuts are completed along all of the parallel slits 21, the support 2 is turned 90. Thereafter, the crystal wafers 9 are cut in the same manner as described above, but now along the slits 24 perpendicular to the slits 21. Subsequently, the small silicon bodies cut from the wafers 9 are removed from the griddle 8, for example, with the aid of acetone.
A cutting rate of 3 to 5 cm per minute has been found well suitable for severing crystal wafers 9 or 0.3 mm thick silicon having a nickel layer of 3 to 5 micron thickness on each of the two main faces. The width of the severing cut is preferably 0.2 mm. This cutting width is obtained with a jet nozzle 11 whose slotted orifice has a width of about 0. l5 mm. The width of the slits 21 and 24 in the griddle is preferably twice to three times the width of the slit-shaped nozzle orifice. The sand employed preferably has a grain size of IO to 30 microns, preferably about 20 microns.
After severing the crystal bodies from the silicon wafers 9, the small silicon bodies already provided with area electrodes, are etched for l to 2 minutes in an aqueous solution of KOH or NaOH The crystal damages caused by the sandblasting at the surface of these silicon bodies are so slight that all of the damaged lattice structure is removed by this treatment, and the full blocking ability of the p-n junctions emerging at the cutting faces is preserved without damage to the metal electrodes.
The sandblasting device 10 may also be provided with several jet nozzles 11' located beside one another, as shown in FIG. 6, so that simultaneously several parallel cuts can be passed through the crystal wafers 9.
The further embodiment of the griddle shown in FIG. 5 and applicable in apparatus otherwise corresponding to FIG. 1, comprises essentially a prismatic block 31 which is provided at the supporting surface for the semiconductor wafers 9 with a number of crosswise and parallel incisions 32 and 33. The other components of the griddle device according to FIG. 5 are denoted by the same reference numerals as those used in FIGS. 1 and 2 for corresponding items respectively.
As will be seen from the cross section illustrated in FIG. 6, the crosswise parallel incisions 32 and 33 extend downward to approximately one-half the height of the metal block 31. The bottom portion of the block 31 is provided with suction bores 34 which preferably are arranged precisely beneath the intersection points of the crosswise parallel incisions 32, 33.
The griddle according to FIGS. 5 and 6 can be fastened, in the same manner as the griddle 5 of F IG. 2, above the suction opening 3 on the support 2.
To those skilled in the art it will be obvious upon a study of this disclosure that my invention permits of various modifications and hence may be given embodiments other than particularly illustrated and described herein, without departing from the essential features of my invention and within the scope of the claims annexed hereto.
lclaim:
l. The method of subdividing a thin semiconductive crystal wafer into individual semiconductor members by forming cuts in the wafer perpendicularly to the faces thereof which comprises cementing a face of the wafer onto a planar support formed with an array of slits extending in direction in which the cuts are to be formed in the wafer, disposing a sandblast nozzle having an elongated outlet opening, that is narrower than the width of the slits formed in the support directly above the opposite face of the wafer and in alignment with one of the slits, blasting a jet of sand having a grain size of substantially ID to 30 p. from the nozzle onto the opposite face of the wafer along the respective slit, and then passing the nozzle along the respective slit and parallel to the faces of the wafer so as to form a severing cut in the wafer, and simultaneously removing sand by suction from the respective slit wherein sand from the nozzle has accumulated.
2. The method of claim 1 wherein the slits are arranged in parallel criss-cross relationship, and which comprises disposing a plurality of the sandblast nozzles in alignment with a corresponding plurality of the slits, blasting a corresponding plurality of jets of the sand from the nozzles onto the wafer along the respective plurality of slits, and then passing the plurality of the nozzles along the respective slits to form severing cuts 5 in the wafer, and simultaneously sucking the sand accumulating in the respective slits out of the same.
and that said Letters Patent are hereby Dated 00 Inventor (s) REII IER EMEIS It is ac iced that error appear Germany Signed and sealed this nth day of (SEAL) Attest:
EDWARD M.FLETCH\3R,JR. Attesting Officer in the a corrected as shown below:
June 197 C MARSHALL DANN Commissioner of Patents
Claims (2)
1. The method of subdividing a thin semiconductive crystal wafer into individual semiconductor members by forming cuts in the wafer perpendicularly to the faces thereof which comprises cementing a face of the wafer onto a planar support formed with an array of slits extending in direction in which the cuts are to be formed in the wafer, disposing a sandblast nozzle having an elongated outlet opening, that is narrower than the width of the slits formed in the support directly above the opposite face of the wafer and in alignment with one of the slits, blasting a jet of sand having a grain size of substantially 10 to 30 Mu from the nozzle onto the opposite face of the wafer along the respective slit, and then passing the nozzle along the respective slit and parallel to the faces of the wafer so as to form a severing cut in the wafer, and simultaneously removing sand by suction from the respective slit wherein sand from the nozzle has accumulated.
2. The method of claim 1 wherein the slits are arranged in parallel criss-cross relationship, and which comprises disposing a plurality of the sandblast nozzles in alignment with a corresponding plurality of the slits, blasting a corresponding plurality of jets of the sand from the nozzles onto the wafer along the respective plurality of slits, and then passing the plurality of the nozzles along the respective slits to form severing cuts in the wafer, and simultaneously sucking the sand accumulating in the respective slits out of the same.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691931335 DE1931335C3 (en) | 1969-06-20 | Method for separating a body from a disk-shaped crystal and device for carrying out this method |
Publications (1)
Publication Number | Publication Date |
---|---|
US3694972A true US3694972A (en) | 1972-10-03 |
Family
ID=5737534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US50181A Expired - Lifetime US3694972A (en) | 1969-06-20 | 1970-06-26 | Method and apparatus for subdividing a crystal wafer |
Country Status (9)
Country | Link |
---|---|
US (1) | US3694972A (en) |
JP (1) | JPS5013510B1 (en) |
AT (1) | AT315241B (en) |
CH (1) | CH504783A (en) |
FR (1) | FR2046967B1 (en) |
GB (1) | GB1259249A (en) |
NL (1) | NL7008966A (en) |
SE (1) | SE351523B (en) |
ZA (1) | ZA704234B (en) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3778935A (en) * | 1972-01-26 | 1973-12-18 | Pennwalt Corp | Abrading apparatus with rotary index table |
US3866357A (en) * | 1974-06-06 | 1975-02-18 | Pennwalt Corp | Abrading apparatus |
US3888054A (en) * | 1973-11-16 | 1975-06-10 | Western Electric Co | Method for abrasive cutting in a liquid |
US3953941A (en) * | 1973-10-11 | 1976-05-04 | Bbc Brown Boveri & Company Limited | Method and apparatus for making a groove in a semi-conductor element |
US4047286A (en) * | 1975-05-20 | 1977-09-13 | Siemens Aktiengesellschaft | Process for the production of semiconductor elements |
US4738056A (en) * | 1984-12-28 | 1988-04-19 | Fuji Seiki Machine Works, Ltd. | Method and blasting apparatus for preparation of silicon wafer |
US5052155A (en) * | 1989-08-10 | 1991-10-01 | Emc Technology, Inc. | Apparatus for the treatment of articles by high velocity impacting thereof with a particulate abrasive material |
US5505653A (en) * | 1992-10-17 | 1996-04-09 | Saechsische Werkzeug Und Sondermaschinen Gmbh | Abrasive/water jet cutting apparatus |
US6676486B1 (en) * | 2000-10-20 | 2004-01-13 | Lightwave Microsystems Corporation | Polymeric chemical injection into a water jet to improve cut quality while cutting very brittle materials |
WO2004025724A1 (en) * | 2002-09-13 | 2004-03-25 | Towa-Intercon Technology, Inc. | Jet singulation of a substrate |
US20050126472A1 (en) * | 2002-09-13 | 2005-06-16 | Towa Intercon Technology, Inc. | Jet singulation |
US20060180579A1 (en) * | 2005-02-11 | 2006-08-17 | Towa Intercon Technology, Inc. | Multidirectional cutting chuck |
SG131836A1 (en) * | 2005-09-22 | 2007-05-28 | Towa Corp | Cutting apparatus |
US20070170597A1 (en) * | 2003-08-18 | 2007-07-26 | Markus Vos | Process for producing components |
EP1873824A1 (en) * | 2002-09-13 | 2008-01-02 | Towa-Intercon Technology, Inc. | Jet singulation of a substrate |
US20080282855A1 (en) * | 2007-05-16 | 2008-11-20 | Disco Corporation | Water jet cutting method |
US20090013839A1 (en) * | 2007-06-14 | 2009-01-15 | Disco Corporation | Water jet processing method |
US20130303053A1 (en) * | 2012-05-08 | 2013-11-14 | Fuji Manufacturing Co., Ltd | Method and device for cutting out hard-brittle substrate |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4702042A (en) * | 1984-09-27 | 1987-10-27 | Libbey-Owens-Ford Co. | Cutting strengthened glass |
CA1252711A (en) * | 1984-09-27 | 1989-04-18 | Richard A. Herrington | Ultra-high pressure abrasive jet cutting of glass |
US4656791A (en) * | 1984-09-27 | 1987-04-14 | Libbey-Owens-Ford Company | Abrasive fluid jet cutting support |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US587892A (en) * | 1897-08-10 | M a t iiia s w a l t e k | ||
US1664159A (en) * | 1926-04-23 | 1928-03-27 | Elroy A Chase | Apparatus for producing ornamental background on stone |
GB794528A (en) * | 1955-10-07 | 1958-05-07 | William Howard Mead | Improvements in receivers for particulate material |
US3187412A (en) * | 1963-04-26 | 1965-06-08 | Gen Electric | Method of mounting and aligning transducers on delay lines |
US3205104A (en) * | 1961-07-10 | 1965-09-07 | Litton Industries Inc | Fabrication of interdigital delay lines |
US3262234A (en) * | 1963-10-04 | 1966-07-26 | Int Rectifier Corp | Method of forming a semiconductor rim by sandblasting |
US3453781A (en) * | 1966-03-30 | 1969-07-08 | Ibm | Tailoring microminiature components |
US3516204A (en) * | 1967-08-21 | 1970-06-23 | Pennwalt Corp | Abrading apparatus |
-
1970
- 1970-06-15 CH CH897770A patent/CH504783A/en not_active IP Right Cessation
- 1970-06-17 AT AT546470A patent/AT315241B/en not_active IP Right Cessation
- 1970-06-18 NL NL7008966A patent/NL7008966A/xx unknown
- 1970-06-19 FR FR7022770A patent/FR2046967B1/fr not_active Expired
- 1970-06-19 GB GB1259249D patent/GB1259249A/en not_active Expired
- 1970-06-20 JP JP5399070A patent/JPS5013510B1/ja active Pending
- 1970-06-22 SE SE08611/70A patent/SE351523B/xx unknown
- 1970-06-22 ZA ZA704234A patent/ZA704234B/en unknown
- 1970-06-26 US US50181A patent/US3694972A/en not_active Expired - Lifetime
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US587892A (en) * | 1897-08-10 | M a t iiia s w a l t e k | ||
US1664159A (en) * | 1926-04-23 | 1928-03-27 | Elroy A Chase | Apparatus for producing ornamental background on stone |
GB794528A (en) * | 1955-10-07 | 1958-05-07 | William Howard Mead | Improvements in receivers for particulate material |
US3205104A (en) * | 1961-07-10 | 1965-09-07 | Litton Industries Inc | Fabrication of interdigital delay lines |
US3187412A (en) * | 1963-04-26 | 1965-06-08 | Gen Electric | Method of mounting and aligning transducers on delay lines |
US3262234A (en) * | 1963-10-04 | 1966-07-26 | Int Rectifier Corp | Method of forming a semiconductor rim by sandblasting |
US3453781A (en) * | 1966-03-30 | 1969-07-08 | Ibm | Tailoring microminiature components |
US3516204A (en) * | 1967-08-21 | 1970-06-23 | Pennwalt Corp | Abrading apparatus |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3778935A (en) * | 1972-01-26 | 1973-12-18 | Pennwalt Corp | Abrading apparatus with rotary index table |
US3953941A (en) * | 1973-10-11 | 1976-05-04 | Bbc Brown Boveri & Company Limited | Method and apparatus for making a groove in a semi-conductor element |
US3888054A (en) * | 1973-11-16 | 1975-06-10 | Western Electric Co | Method for abrasive cutting in a liquid |
US3866357A (en) * | 1974-06-06 | 1975-02-18 | Pennwalt Corp | Abrading apparatus |
US4047286A (en) * | 1975-05-20 | 1977-09-13 | Siemens Aktiengesellschaft | Process for the production of semiconductor elements |
US4738056A (en) * | 1984-12-28 | 1988-04-19 | Fuji Seiki Machine Works, Ltd. | Method and blasting apparatus for preparation of silicon wafer |
US5052155A (en) * | 1989-08-10 | 1991-10-01 | Emc Technology, Inc. | Apparatus for the treatment of articles by high velocity impacting thereof with a particulate abrasive material |
US5505653A (en) * | 1992-10-17 | 1996-04-09 | Saechsische Werkzeug Und Sondermaschinen Gmbh | Abrasive/water jet cutting apparatus |
US6676486B1 (en) * | 2000-10-20 | 2004-01-13 | Lightwave Microsystems Corporation | Polymeric chemical injection into a water jet to improve cut quality while cutting very brittle materials |
US6676485B1 (en) * | 2000-10-20 | 2004-01-13 | Lightwave Microsystems Corporation | Wet injecting fine abrasives for water jet curved cutting of very brittle materials |
WO2004025724A1 (en) * | 2002-09-13 | 2004-03-25 | Towa-Intercon Technology, Inc. | Jet singulation of a substrate |
US20050126472A1 (en) * | 2002-09-13 | 2005-06-16 | Towa Intercon Technology, Inc. | Jet singulation |
US20050145166A1 (en) * | 2002-09-13 | 2005-07-07 | Towa Intercon Tools, Inc. | Jet singulation |
US7059940B2 (en) | 2002-09-13 | 2006-06-13 | Towa Intercon Technology, Inc. | Jet singulation |
US20060194514A1 (en) * | 2002-09-13 | 2006-08-31 | Towa Intercon Technology, Inc., A California Corporation | Jet singulation |
US7153186B2 (en) | 2002-09-13 | 2006-12-26 | Towa Intercon Technology, Inc. | Jet singulation |
EP1873824A1 (en) * | 2002-09-13 | 2008-01-02 | Towa-Intercon Technology, Inc. | Jet singulation of a substrate |
US7357694B2 (en) | 2002-09-13 | 2008-04-15 | Towa Corporation | Jet singulation |
US7736995B2 (en) | 2003-08-18 | 2010-06-15 | Schott Ag | Process for producing components |
CN1835823B (en) * | 2003-08-18 | 2011-02-09 | 肖特股份公司 | Method for the production of components |
US20070170597A1 (en) * | 2003-08-18 | 2007-07-26 | Markus Vos | Process for producing components |
US20060180579A1 (en) * | 2005-02-11 | 2006-08-17 | Towa Intercon Technology, Inc. | Multidirectional cutting chuck |
SG131836A1 (en) * | 2005-09-22 | 2007-05-28 | Towa Corp | Cutting apparatus |
US20080282855A1 (en) * | 2007-05-16 | 2008-11-20 | Disco Corporation | Water jet cutting method |
US20090013839A1 (en) * | 2007-06-14 | 2009-01-15 | Disco Corporation | Water jet processing method |
US7585201B2 (en) * | 2007-06-14 | 2009-09-08 | Disco Corporation | Water jet processing method |
US20130303053A1 (en) * | 2012-05-08 | 2013-11-14 | Fuji Manufacturing Co., Ltd | Method and device for cutting out hard-brittle substrate |
US9333624B2 (en) * | 2012-05-08 | 2016-05-10 | Fuji Manufacturing Co., Ltd | Method and device for cutting out hard-brittle substrate and protecting regions on the substrate |
US20160243673A1 (en) * | 2012-05-08 | 2016-08-25 | Fuji Manufacturing Co., Ltd | Method and device for cutting out hard-brittle substrate |
US10071462B2 (en) * | 2012-05-08 | 2018-09-11 | Fuji Manufacturing Co., Ltd. | Method and device for cutting out hard-brittle substrate |
Also Published As
Publication number | Publication date |
---|---|
FR2046967A1 (en) | 1971-03-12 |
ZA704234B (en) | 1971-03-31 |
FR2046967B1 (en) | 1974-09-20 |
JPS5013510B1 (en) | 1975-05-20 |
NL7008966A (en) | 1970-12-22 |
DE1931335B2 (en) | 1976-03-11 |
AT315241B (en) | 1974-05-10 |
GB1259249A (en) | 1972-01-05 |
CH504783A (en) | 1971-03-15 |
SE351523B (en) | 1972-11-27 |
DE1931335A1 (en) | 1970-12-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3694972A (en) | Method and apparatus for subdividing a crystal wafer | |
US10201907B2 (en) | SiC wafer producting method | |
US7183137B2 (en) | Method for dicing semiconductor wafers | |
KR102096823B1 (en) | Semiconductor die singulation method | |
US3542266A (en) | Method of producing a plurality of separate semiconductor components from a semiconductor crystal body | |
US3559855A (en) | Shimless scribing | |
DE69905538D1 (en) | System for cleaning semiconductor wafers with megasonic traveling wave | |
US3080640A (en) | Method of manufacturing semi-conductive electrode systems | |
JPS6296400A (en) | Production of wafer | |
US3078559A (en) | Method for preparing semiconductor elements | |
US6018884A (en) | Air blow apparatus for a semiconductor wafer | |
US20040056560A1 (en) | Fabrication of film bulk acoustic resonators on silicon <110> wafers using crystal-orientation-dependent anisotropic etching | |
US3708936A (en) | Method of trimming crystalline photosensor arrays to close tolerances | |
US10957597B2 (en) | Semiconductor substrate die sawing singulation systems and methods | |
US2911773A (en) | Method of cutting semiconductive material | |
JPS59220947A (en) | Manufacture of semiconductor device | |
US3606035A (en) | Subdivided semiconductor wafer separator | |
US6033289A (en) | Detailing and cleaning apparatus for green ceramic dry dicing process | |
US3762973A (en) | Method of etch subdividing semiconductor wafers | |
US11972980B2 (en) | Singulation systems and related methods | |
JP2004082283A (en) | Wire saw | |
JP2014107518A (en) | Scribe tool, scribe method and cutting method of fragile material substrate | |
US3578227A (en) | Method of breaking dice | |
SU1314400A1 (en) | Method of cutting monocrystal ingots | |
JPH04192442A (en) | Dicing device |