US3673017A - Particle track etching method - Google Patents

Particle track etching method Download PDF

Info

Publication number
US3673017A
US3673017A US53495A US3673017DA US3673017A US 3673017 A US3673017 A US 3673017A US 53495 A US53495 A US 53495A US 3673017D A US3673017D A US 3673017DA US 3673017 A US3673017 A US 3673017A
Authority
US
United States
Prior art keywords
etching
track
etchant
particle
rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US53495A
Other languages
English (en)
Inventor
David D Peterson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of US3673017A publication Critical patent/US3673017A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Definitions

  • tracks left by atomic particles in solids can be enlarged for study by the use of an etchant solution.
  • the enlarged bores made by the etchant solution while suitable for studies relative to such things as the track length and direction, are not as suitable for such uses as filter elements having ultra-small holes as those of the present invention. This is because presently used etchants cause the hole to have a non-uniform profile.
  • the etchant material from the start of the etchant process to the completion of that process, is a saturated solution; i.e., saturated with the etch product. It has been found that as the etch product concentration is increased there is an abrupt change in the etching rate at the solubility limit of the etch products. By controlling the etching process so that it takes place at the maximum rate over the entire surface of the material being etched, a uniform profile is obtained along the particle track.
  • FIG. 1 illustrates the general etching process
  • FIG. 2 is a plan view of a comparison of the etching process according to the present invention and that of the prior art.
  • FIG. 3 is a side view of a comparison of the etching process according to the present invention and that of the prior art.
  • FIG. 4 illustrates curves showing bulk etching rate as a function of etch product concentration.
  • the material 10 may comprise any suitable dielectric material such as a plastic film which, for example, may be Lexan polycarbonate film. As a charged particle passes through film 10, it leaves a track of damage 11.
  • the surface of the film 10 Upon being subjected to an etching solution, the surface of the film 10 is etched away together with region along the track 11.
  • the rate at which the surface of the film 10 is worn away is known as the general etching rate.
  • the rate at which the track is etched away is called the track etching rate.
  • the track ice etching rate To obtain a track upon etching, the track ice etching rate must be larger than the general etching rate and the ratio of these two determines the shape of the bore left by the etching solution.
  • the configuration of film 10 after being subjected to the etching solution is illustrated by dashed lines 12 and 13. The thickness of the film 10 has been reduced to the point indicated by line 13 and is determined by the general etching rate.
  • the enlarged track portion 12 which may be conical in shape, has its height determined by the track etching rate.
  • the profile of the bore 12 is generally rather irregular when etchants of the prior are are used. It has been discovered that upon saturation of the etchant solution with etch products, the rate of etching abruptly increases to a maximum and remains at the level for as long as the etching solution remains saturated. Utilizing this method, much of the irregularity of profile can be alleviated.
  • FIGS. 2 and 3 A comparison of the method of the prior art and that of the present invention is illustrated in FIGS. 2 and 3. As shown in FIGS. 2 and 3, the bore 15 resulting from the etchings of the prior art has an irregular profile 14.
  • the resulting etching takes place at a maximum and a uniform rate resulting in a bore 17 of uniform profile 16.
  • FIG. 4 illustrates a set of curves showing the bulk etching rate as a function of etch product concentration for two different etchant temperatures, namely, 40 C. and 55 C.
  • An example of an etchant that may be used for Lexan is a 6.25 N aqueous sodium hydroxide solution containing a 0.05 percent Benax 2A1 surfactant or wetting agent. Benax 2A1 is made by Dow Chemical Company.
  • an etching solution at 40 C. has a bulk etching rate of about 0.08 micron per hour until the etch product solubility limit is reached, whereupon the bulk etching rate abruptly changes to about 0.17 micron per hour.
  • the bulk etching rate with a 55 C. etchant gradually increases until the etch product solubility limit is reached whereupon it can abruptly increases to a stable value.
  • An etching method for etching a material with an etching solution producing etch products comprising the steps of:
  • a method for etching a material containing particle tracks with an etching solution producing etch products comprising the steps of:
  • etching solution comprises an aqueous hydroxide solution and a surfactant
  • material containing particle tracks comprises a polycarbonate film
  • a particle track etching process comprising. the 1 H --References-Cited P ir v p t Q 1 t k t UNITED STATES PATENTS SH 16C 111g a ma erla C011 aimng'par 1C6 rac S 0 an 3,373,683 3/1968 Alter 25083 X i t f 2 5?

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • ing And Chemical Polishing (AREA)
US53495A 1970-07-09 1970-07-09 Particle track etching method Expired - Lifetime US3673017A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5349570A 1970-07-09 1970-07-09

Publications (1)

Publication Number Publication Date
US3673017A true US3673017A (en) 1972-06-27

Family

ID=21984672

Family Applications (1)

Application Number Title Priority Date Filing Date
US53495A Expired - Lifetime US3673017A (en) 1970-07-09 1970-07-09 Particle track etching method

Country Status (2)

Country Link
US (1) US3673017A (enrdf_load_html_response)
JP (1) JPS5855198B1 (enrdf_load_html_response)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2381323A1 (fr) * 1977-02-18 1978-09-15 Minnesota Mining & Mfg Element optique polymere a surface antireflechissante et son procede de realisation
EP0002205A1 (de) * 1977-11-25 1979-06-13 International Business Machines Corporation Verfahren zur Erzeugung von Blasensiedezentren auf einer Oberfläche eines Siliciumhalbleiterkörpers, Kühlverfahren unter Verwendung einer derart hergestellten Oberfläche und Anordnung zum Kühlen von Halbleitervorrichtungen
EP0029914A1 (en) * 1979-11-05 1981-06-10 International Business Machines Corporation Method of decreasing the optical reflectiveness of surfaces
DE3642897A1 (de) * 1986-12-16 1988-06-30 K O Prof Dr Thielheim Doppelbrechendes optisches material und verfahren zu seiner herstellung
US5904846A (en) * 1996-01-16 1999-05-18 Corning Costar Corporation Filter cartridge having track etched membranes and methods of making same
US20040004344A1 (en) * 2002-07-05 2004-01-08 Hyundai Mobis Horn switch integrated with airbag module
RU2220762C1 (ru) * 2002-09-24 2004-01-10 Объединенный Институт Ядерных Исследований Способ получения асимметричной трековой мембраны
US20040240155A1 (en) * 2003-05-30 2004-12-02 Miltich Thomas P. Capacitors including metalized separators
US20040246657A1 (en) * 2003-05-30 2004-12-09 Norton John D. Capacitors including track-etched separator materials
US20050186404A1 (en) * 2004-02-23 2005-08-25 Guoping Mao Etched polycarbonate films
US6995971B2 (en) 2003-05-30 2006-02-07 Medtronic, Inc. Capacitors including interacting separators and surfactants
WO2010081066A1 (en) 2009-01-12 2010-07-15 Medtronic, Inc. Separator filled with ellectrolyte
CN109082084A (zh) * 2018-07-04 2018-12-25 温州大学 一种具有纳米孔道的高分子膜及其制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61120899U (enrdf_load_html_response) * 1985-01-16 1986-07-30

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2381323A1 (fr) * 1977-02-18 1978-09-15 Minnesota Mining & Mfg Element optique polymere a surface antireflechissante et son procede de realisation
EP0002205A1 (de) * 1977-11-25 1979-06-13 International Business Machines Corporation Verfahren zur Erzeugung von Blasensiedezentren auf einer Oberfläche eines Siliciumhalbleiterkörpers, Kühlverfahren unter Verwendung einer derart hergestellten Oberfläche und Anordnung zum Kühlen von Halbleitervorrichtungen
EP0029914A1 (en) * 1979-11-05 1981-06-10 International Business Machines Corporation Method of decreasing the optical reflectiveness of surfaces
DE3642897A1 (de) * 1986-12-16 1988-06-30 K O Prof Dr Thielheim Doppelbrechendes optisches material und verfahren zu seiner herstellung
US5904846A (en) * 1996-01-16 1999-05-18 Corning Costar Corporation Filter cartridge having track etched membranes and methods of making same
US6103119A (en) * 1996-01-16 2000-08-15 Whatman Inc. Filter cartridges having track etched membranes and methods of making same
US20040004344A1 (en) * 2002-07-05 2004-01-08 Hyundai Mobis Horn switch integrated with airbag module
RU2220762C1 (ru) * 2002-09-24 2004-01-10 Объединенный Институт Ядерных Исследований Способ получения асимметричной трековой мембраны
US20060028786A1 (en) * 2003-05-30 2006-02-09 Medtronic, Inc. Capacitors including interacting separators and surfactants
US20040246657A1 (en) * 2003-05-30 2004-12-09 Norton John D. Capacitors including track-etched separator materials
US6967828B2 (en) 2003-05-30 2005-11-22 Medtronic, Inc. Capacitors including metalized separators
US6985352B2 (en) 2003-05-30 2006-01-10 Medtronic, Inc. Capacitors including track-etched separator materials
US6995971B2 (en) 2003-05-30 2006-02-07 Medtronic, Inc. Capacitors including interacting separators and surfactants
US20040240155A1 (en) * 2003-05-30 2004-12-02 Miltich Thomas P. Capacitors including metalized separators
US7875087B2 (en) 2003-05-30 2011-01-25 Medtronic, Inc. Capacitors including interacting separators and surfactants
US20050186404A1 (en) * 2004-02-23 2005-08-25 Guoping Mao Etched polycarbonate films
WO2005082983A1 (en) * 2004-02-23 2005-09-09 3M Innovative Properties Company Etched polycarbonate films
US20060127653A1 (en) * 2004-02-23 2006-06-15 Guoping Mao Chemical etching of polycarbonate films and related applications
WO2010081066A1 (en) 2009-01-12 2010-07-15 Medtronic, Inc. Separator filled with ellectrolyte
US7867290B2 (en) 2009-01-12 2011-01-11 Medtronic, Inc. Separator filled with electrolyte
CN109082084A (zh) * 2018-07-04 2018-12-25 温州大学 一种具有纳米孔道的高分子膜及其制备方法

Also Published As

Publication number Publication date
JPS5855198B1 (enrdf_load_html_response) 1983-12-08

Similar Documents

Publication Publication Date Title
US3673017A (en) Particle track etching method
EP0625285B1 (de) Verfahren zum anisotropen ätzen von silicium
CA2264908C (en) Method for anisotropic etching of structures in conducting materials
DE69013928T2 (de) Methode zum präparieren von siliziumcarbidoberflächen für kristallwachstum.
EP0943155A1 (de) Verfahren zum anisotropen ätzen von silizium
DE69121047T2 (de) Ätzverfahren für Materialien aus Oxid
JPS58501014A (ja) ＩｎＧａＡｓＰ／ＩｎＰヘテロ構造中の光学的平担面の選択性エツチング法
DE2303798C2 (de) Verfahren zum Herstellen von Halbleiterbauelementen
ATE399363T1 (de) Reaktivionenstrahlätzenverfahren und nach diesem verfahren hergestellter dünnfilmkopf
US4183781A (en) Stabilization process for aluminum microcircuits which have been reactive-ion etched
DE3304561C2 (enrdf_load_html_response)
Mayr et al. Periodic and chaotic breathing of pulses in a ringlaser
DE2727788C2 (de) Verfahren zum Herstellen eines Musters in einer Oberflächenschicht eines scheibenförmigen Körpers
DE2027156A1 (de) Verfahren zum elektrolytischen Polieren von Niobteilen
US4169026A (en) Etchant for electrolytic etching of a ferrite for a magnetic head and method of producing a magnetic head
DE2252045C2 (de) Verfahren zum Polieren von Galliumphosphid-Oberflächen
JPS5247703A (en) Process for producing a recoring medium of magnetic iron oxide
EP0249834A3 (de) Herstellung von Feinstrukturen für die Halbleiterkontaktierung
Desvaux Strain Bursts in Cu-12 at.% Al Single Crystals
DE2224468A1 (de) Verfahren zum aetzen von vorzugsweise glas- bzw. siliciumdioxydschichten
ES383605A1 (es) Procedimiento para mordentar sustratos.
US2872387A (en) Anodic treatment of uranium
Sethi et al. Surface topography of etched GaAs surfaces
US3485731A (en) Process for electrolytically etching indium arsenide
DE2225424C2 (de) Verfahren zum Herstellen einer Halbleiterdiode