US3646305A - Process for reducing transition resistance between two superimposed, conducting layers of a microelectric circuit - Google Patents

Process for reducing transition resistance between two superimposed, conducting layers of a microelectric circuit Download PDF

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Publication number
US3646305A
US3646305A US845004A US3646305DA US3646305A US 3646305 A US3646305 A US 3646305A US 845004 A US845004 A US 845004A US 3646305D A US3646305D A US 3646305DA US 3646305 A US3646305 A US 3646305A
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Prior art keywords
layers
transition resistance
conductor
conductive layers
superimposed
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Expired - Lifetime
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US845004A
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English (en)
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Martin Schmidtke
Winfried Ruttenauer
Rheinhold Penzl
Brigitte Vollmer
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Siemens AG
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Siemens AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • ABSTRACT A method for reducing transition resistance between two su- Aug. 27, 1968 Germany ..P 17 90 023.1 pefimPosed conducting layers Of a multilayer! micmlectronic circuit, in which there is applied to the two conducting layers an electrical energy having a magnitude below that U.S. Cl ..219/50, 29/584, 219/ l 13 au ing a destruction of the conducting layers involved, such Int.
  • Conductive line paths produced for use in microelectronic circuits such as integrated circuits, etc. may be produced in various way, for example, by vaporizing-on, cathode dusting, screening, chemical processes or electrolytic metal precipitation.
  • the conductors must be produced by different operational or working steps, as a result of which the conductor or conductor sections produced in a subsequent working step must be conductively connected electrically with line paths already present.
  • the simplest way of effecting such a connection is to permit the conductors involved to overlap one another. However, at such overlapping locations, at which line paths to be connected are disposed one upon the other, there frequently occur contact disturbances resulting from the creation of separating layers between the respective conductive layers.
  • Such separating layers occur, particularly those resulting from surface oxidation, mainly on the line formed by the first applied layer. Separating layers can also be formed, however, by other chemical processes during storage or during the application of subsequent layers. They may also arise through impurities, for example, in coverings or photolacquers, as a result of adsorbed gases and the like. Such separating layers can also reduce the adhesion of the subsequently applied layers, and furthermore, as a rule, increase the electrical resistance between the layers to be connected.
  • Underlying the present invention is the problem of producing a process by which undesirably high transition resistance at the connecting points of such conductive layers is materially reduced.
  • a special advantage of the invention is that it thereby becomes possible to use, for the production of conduction paths in microelectronic circuits, even substances which tend to exhibit surface changes during the production operations, for example substances which oxidize easily such as aluminum. As is known, such substances have especially good adhesive characteristics.
  • a further advantage derived from utilization of the invention resides in that there are also prevented variations with aging, resulting from changes occurring in the separating layers in the course of time.
  • FIG. 1 illustrates the overlying of two conductors
  • FIG. 2 illustrates the crossing of two conductors
  • FIG. 3 illustrates the underpassing of two conductors
  • FIG. 4 illustrates the contacting of a conductor
  • FIGS. 5 and 6 illustrate connections of conductors respectively arranged in X- and Y-directions
  • FIG. 7 illustrates an arrangement for performing the method of the invention.
  • FIG. 8 illustrates a circuit suitable for use in method of the invention.
  • the conductors l and 2 overlap one another at the location 3 and at the meeting surfaces thereat there occur separating layers, particularly oxide layers, which increase the transition resistance. I have found that this transition resistance can be considerably reduced by the application of an electrical potential to the respective conductors involved. For example, in the case of an overlapping of two conductive line paths, each of which has a width of 50 p. and a thickness of from 1 to 2 p.
  • FIG. 2 illustrates a conductive line crossover in which the line paths formed by the conductors l, 2 and the conductor bridge 4 passes over the line 5. Electrical insulation between the conductor 5 and the line path 1, 2 and 4 is provided by insulating layer 6. In this case, there likewise occur at the connection points between the bridge 4 and the conductors l and 2 separating layers which can be considerably reduced by applying an electrical potential to the conductors l and 2 or to the conductor bridge 4 and to each one of the conductors l and 2.
  • FIG. 3 illustrates a conductor underpass, which is otherwise generally constructed analogously to the conductor overpass of FIG. 2, and in which there likewise occur between the line section 4 and the conductors l and 2 separating layers which can be considerably reduced by application of the method of the invention.
  • FIGS. 5 and 6 illustrate connections between a conductor 10 extending in X-direction and conductors such as the conductors ll, 11' arranged thereabove and separated therefrom by respective insulating layers, such as the layers 13,13 extending in Y direction, as illustrated in FIG. 5, or a continuous insulating layer 13 as illustrated in FIG. 6, by means of connecting sections 12. Separating layers occurring at the common surfaces of the lines 10,11 and the line sections 12 may be eliminated according to the invention by applying a suitable potential to the lines and 11, as previously described.
  • the application of an electrical potential to the line paths 1 and 2 for the elimination of transition resistance at the overlap 3 can be accomplished with the aid of probes l4, 15, connected with a suitable electrical potential source, which probes are pressed in contacting relation with the conducting layers 1 and 2.
  • FIG. 8 illustrates a suitable circuit arrangement for the practice of the invention, comprising a potential source 16 which, for example, can be applied over a series resistor 18 and a switch 21 to a capacitor 17 to effect a charging of the latter.
  • a potential source 16 which, for example, can be applied over a series resistor 18 and a switch 21 to a capacitor 17 to effect a charging of the latter.
  • the switch 21 By actuation of the switch 21, the energy stored in the capacitor 17 may then be applied, possibly over a series resistor 19, to the transition site, represented in FIG. 8 by its substitution resistance 20.
  • a method of reducing transition resistance at the electrical connection between two conductor sections cooperable to form a composite conductor for connecting elements of a mu]- tilayered microelectronic circuit which conductor sections are in the form of respective relatively thin conductive layers disposed on a suitable supporting member in sequential operations with portions of said layers superimposed upon each other to form said electrical connection, and in the course of which operations such transition resistance is created by the formation of separating layers between opposed connecting faces of said conductive layers, comprising the step of applying to the two conductive layers so formed an electrical energy having a magnitude that is sufficient to substantially eliminate such separating layers between such opposed connecting faces of said superimposed conductive layers and thereby materially reduce said transition resistance therebetween to a negligible operative value as compared to a corresponding continuous element-connecting conductor, but insufficient to cause a destruction of the relatively very thin conductive layers forming said conductor sections.
  • a method according to claim 2, wherein said applied energy comprises an initial potential within the range of l to 20 volts.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
US845004A 1968-08-27 1969-07-25 Process for reducing transition resistance between two superimposed, conducting layers of a microelectric circuit Expired - Lifetime US3646305A (en)

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Application Number Priority Date Filing Date Title
DE1790023 1968-08-27

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US3646305A true US3646305A (en) 1972-02-29

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US845004A Expired - Lifetime US3646305A (en) 1968-08-27 1969-07-25 Process for reducing transition resistance between two superimposed, conducting layers of a microelectric circuit

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US (1) US3646305A (xx)
BE (1) BE738049A (xx)
CH (1) CH488289A (xx)
FR (1) FR2016436A1 (xx)
GB (1) GB1237481A (xx)
NL (1) NL6911985A (xx)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3842489A (en) * 1971-10-18 1974-10-22 Nuclear Battery Corp Process for treating thermopile
US3870848A (en) * 1971-08-05 1975-03-11 Electricity Council Making of connections in electrical power distribution systems
US4216423A (en) * 1977-11-21 1980-08-05 Mb Associates Apparatus and method for enhancing electrical conductivity of conductive composites and products thereof
US4350866A (en) * 1977-10-11 1982-09-21 Fujitsu Limited Discharge device and method for use in processing semiconductor devices
US4383942A (en) * 1977-11-21 1983-05-17 Mb Associates Apparatus and method for enhancing electrical conductivity of conductive composites and products thereof
US4458129A (en) * 1979-11-29 1984-07-03 Fujitsu, Limited Discharge device and method for use in processing semiconductor devices
US4543594A (en) * 1982-09-07 1985-09-24 Intel Corporation Fusible link employing capacitor structure
US4570046A (en) * 1983-09-09 1986-02-11 Gte Products Corporation Method of processing PTC heater
US20180099347A1 (en) * 2016-10-07 2018-04-12 GM Global Technology Operations LLC Apparatus for Improving Weld Uniformity

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3073943A (en) * 1954-05-11 1963-01-15 Int Standard Electric Corp Manufacture of electrical capacitors
US3206340A (en) * 1960-06-22 1965-09-14 Westinghouse Electric Corp Process for treating semiconductors
US3261082A (en) * 1962-03-27 1966-07-19 Ibm Method of tailoring thin film impedance devices
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3308528A (en) * 1963-11-06 1967-03-14 Ibm Fabrication of cermet film resistors to close tolerances
US3324706A (en) * 1960-06-15 1967-06-13 Microdot Inc Apparatus for temperature compensation of strain gages
US3402448A (en) * 1966-05-04 1968-09-24 Bunker Ramo Thin film capacitor and method of adjusting the capacitance thereof
US3457637A (en) * 1967-02-06 1969-07-29 Gen Instrument Corp Method for trimming cermet resistors

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3073943A (en) * 1954-05-11 1963-01-15 Int Standard Electric Corp Manufacture of electrical capacitors
US3324706A (en) * 1960-06-15 1967-06-13 Microdot Inc Apparatus for temperature compensation of strain gages
US3206340A (en) * 1960-06-22 1965-09-14 Westinghouse Electric Corp Process for treating semiconductors
US3261082A (en) * 1962-03-27 1966-07-19 Ibm Method of tailoring thin film impedance devices
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3308528A (en) * 1963-11-06 1967-03-14 Ibm Fabrication of cermet film resistors to close tolerances
US3402448A (en) * 1966-05-04 1968-09-24 Bunker Ramo Thin film capacitor and method of adjusting the capacitance thereof
US3457637A (en) * 1967-02-06 1969-07-29 Gen Instrument Corp Method for trimming cermet resistors

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3870848A (en) * 1971-08-05 1975-03-11 Electricity Council Making of connections in electrical power distribution systems
US3842489A (en) * 1971-10-18 1974-10-22 Nuclear Battery Corp Process for treating thermopile
US4350866A (en) * 1977-10-11 1982-09-21 Fujitsu Limited Discharge device and method for use in processing semiconductor devices
US4216423A (en) * 1977-11-21 1980-08-05 Mb Associates Apparatus and method for enhancing electrical conductivity of conductive composites and products thereof
US4383942A (en) * 1977-11-21 1983-05-17 Mb Associates Apparatus and method for enhancing electrical conductivity of conductive composites and products thereof
US4458129A (en) * 1979-11-29 1984-07-03 Fujitsu, Limited Discharge device and method for use in processing semiconductor devices
US4543594A (en) * 1982-09-07 1985-09-24 Intel Corporation Fusible link employing capacitor structure
US4570046A (en) * 1983-09-09 1986-02-11 Gte Products Corporation Method of processing PTC heater
US20180099347A1 (en) * 2016-10-07 2018-04-12 GM Global Technology Operations LLC Apparatus for Improving Weld Uniformity

Also Published As

Publication number Publication date
CH488289A (de) 1970-03-31
NL6911985A (xx) 1970-03-03
FR2016436A1 (xx) 1970-05-08
GB1237481A (en) 1971-06-30
BE738049A (xx) 1970-02-27

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