US3615262A - Crystal seed following a hypercycloid path in melt - Google Patents

Crystal seed following a hypercycloid path in melt Download PDF

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Publication number
US3615262A
US3615262A US762992A US3615262DA US3615262A US 3615262 A US3615262 A US 3615262A US 762992 A US762992 A US 762992A US 3615262D A US3615262D A US 3615262DA US 3615262 A US3615262 A US 3615262A
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United States
Prior art keywords
melt
path
crystal
hypercycloid
crucible
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Expired - Lifetime
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US762992A
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English (en)
Inventor
Rudolf Kappelmeyer
Max-Hugo Kellerbauer
Karl Danassy
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Siemens AG
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Siemens AG
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Publication date
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Publication of US3615262A publication Critical patent/US3615262A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Definitions

  • the holder of the seed crystal, which is immersed into the melt, is given an eccentric movement with respect to the melt contained in the crucible.
  • the holder of the seed crystal which moves along the eccentric path is given an addi tional movement which produces a hypercycloid path with respect to the melt.
  • the eccentric pulling method produces, in the crucible pulled monocrystals, a considerable reduction in the resistance change across the crystal cross section, compared to the conventional Czochralski method.
  • the relatively still high number of seed crystals in the order of approximately 100 r.p.m. also influences the crystal quality because of the increased oxygen content in the melt.
  • Our invention has among its objects the obtainment of an improved crystal quality, together with a relatively uniform radial resistance distribution across the entire rod cross section.
  • the present invention relates to an improvement of the known eccentric crucible-pulling method and calls for the holder of the seed crystal which moves along the eccentric path to be given an additional movement which produces a hypercycloid path with respect to the melt.
  • the rotation of the seed crystal is set at to r.p.m.
  • the good mixing of the melting zone moreover ensures a homogeneous temperature curve within the melting zone, so that the resolidified rod crystallizes without high-thermal stresses, and acccordingly, considerably reduces the frequency of crystal disturbances.
  • a semiconductor crystal rod has a normal diameter of about 20 to 25 mm.
  • the change in eccentricity amounts to about :4 mm.
  • lt is particularly preferable for the pulling velocity of the crystal from the melt to be between I to 3 mm./min.
  • the method of the present invention makes it possible to produce semiconductor crystal rods, preferably silicon monocrystal rods, with a relatively unifonn radial resistance distribution across the rod cross section and with greater crystal perfection than according to the known cruciblepulling method.
  • the single lFlG. of the drawing illustrates the invention.
  • the invention will be described with respect to an embodiment example illustrated by the drawing which, for the sake of clarity, is drawn at an intersection of axes.
  • the curve 1 illustrates the path of the moving crystal seed, caused by the additional movement exerted upon the crystal holder, and includes a tangential component t and a radial component r.
  • the rotary crucible axis is shown at 2, with the concentric circles, around said axis 2 indicating the crystal seed axis 3, the crystal pulling axis 4 and the crucible edge 5.
  • the double arrow 6 indicates the change of eccentricity, while the double arrow 7 denotes the maximum eccentricity.
  • the hatched circles show a top view of the crystal seed, in sequential phases of movement.
  • the center points of the crystal seed axes, which correspond to the individual phases are marked 3', 3" and 3".
  • the connection of these center points results in the aforementioned path 1 of the crystal seed.
  • This path in accordance with the present invention, is effected by the additional movement upon the crystal holder.
  • the execution of the method is effected by using conventional driving equipment.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US762992A 1967-10-04 1968-09-26 Crystal seed following a hypercycloid path in melt Expired - Lifetime US3615262A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0112259 1967-10-04

Publications (1)

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US3615262A true US3615262A (en) 1971-10-26

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US762992A Expired - Lifetime US3615262A (en) 1967-10-04 1968-09-26 Crystal seed following a hypercycloid path in melt

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US (1) US3615262A (de)
DE (1) DE1644020A1 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050905A (en) * 1975-05-27 1977-09-27 The Harshaw Chemical Company Growth of doped crystals
US4247360A (en) * 1977-06-17 1981-01-27 International Standard Electric Corporation Crystalline layer growth method
US6371361B1 (en) * 1996-02-09 2002-04-16 Matsushita Electric Industrial Co., Ltd. Soldering alloy, cream solder and soldering method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2758888C2 (de) * 1977-12-30 1983-09-22 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Siliciumeinkristalle
EP0174004B1 (de) * 1984-09-04 1990-08-08 Forschungszentrum Jülich Gmbh Verfahren zur Herstellung eines kristallinen Körpers aus der Schmelze

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1817405A (en) * 1925-12-05 1931-08-04 Deckel Ag Friedrich Production of cycloidal curves
CA640636A (en) * 1962-05-01 F. Rhode Georg Drawing of semi-conductive crystals from a melt
US3228753A (en) * 1962-07-27 1966-01-11 Texas Instruments Inc Orbital-spin crystal pulling

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA640636A (en) * 1962-05-01 F. Rhode Georg Drawing of semi-conductive crystals from a melt
US1817405A (en) * 1925-12-05 1931-08-04 Deckel Ag Friedrich Production of cycloidal curves
US3228753A (en) * 1962-07-27 1966-01-11 Texas Instruments Inc Orbital-spin crystal pulling

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050905A (en) * 1975-05-27 1977-09-27 The Harshaw Chemical Company Growth of doped crystals
US4247360A (en) * 1977-06-17 1981-01-27 International Standard Electric Corporation Crystalline layer growth method
US4285911A (en) * 1977-06-17 1981-08-25 International Standard Electric Corporation Device for growing a crystalline layer on a substrate
US6371361B1 (en) * 1996-02-09 2002-04-16 Matsushita Electric Industrial Co., Ltd. Soldering alloy, cream solder and soldering method

Also Published As

Publication number Publication date
DE1644020A1 (de) 1971-03-25

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