US3496512A - Non-linear resistors - Google Patents

Non-linear resistors Download PDF

Info

Publication number
US3496512A
US3496512A US637492A US3496512DA US3496512A US 3496512 A US3496512 A US 3496512A US 637492 A US637492 A US 637492A US 3496512D A US3496512D A US 3496512DA US 3496512 A US3496512 A US 3496512A
Authority
US
United States
Prior art keywords
oxide
silver
percent
value
sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US637492A
Other languages
English (en)
Inventor
Michio Matsuoka
Takeshi Masuyama
Yoshio Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of US3496512A publication Critical patent/US3496512A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
    • H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
    • H01C17/283—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/285—Precursor compositions therefor, e.g. pastes, inks, glass frits applied to zinc or cadmium oxide resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49085—Thermally variable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49101—Applying terminal

Definitions

  • NON -LINEAR RESISTORS Filed May 10, 1967 ATTORNEYS United States Patent 3,496,512 NON-LINEAR RESISTORS Michio Matsuoka, Nishinomiya-shi, Takeshi Masuyama, Takatsuki-shi, and Yoshio Iida, Hirakata-shi, Japan, assignors to Matsushita Electric Industrial Co., Ltd., Osaka, Japan Filed May 10, 1967, Ser. No. 637,492 Claims priority, application Japan, May 16, 1966, 41/ 31,594 Int. Cl. Htllc 7/10, 7/04, 1/14 US. Cl. 33820 7 Claims ABSTRACT OF THE DISCLOSURE New non-linear resistors having non-ohmic resistance are provided.
  • Such resistors comprise a sintered wafer comprising, as an active ingredient, zinc oxide, and silver electrodes applied to opposite surfaces of said sintered wafer.
  • a method for making such resistors comprising applying a silver electrode paint to the opposite surfaces of the sintered wafer, heating said silver electrode paint in an oxidizing atmosphere at 100 to 850 C. so as to produce silver electrodes adhered to said surfaces and connecting lead wires to said silver electrode by a conductive connection means.
  • NON-LINEAR RESIST ORS where V is the voltage across the resistor, I is the current flowing through the resistor, C is a constant equivalent to the voltage at a given current and exponent n is a numerical value greater than 1. The value of n is calculated by the following equation:
  • V and V are the voltages at given currents I and I respectively.
  • I and I are 10 ma. and 100 ma. respectively.
  • the desired value of C depends upon the kind of application to which the resistor is to be put. It is ordinarily desirable that the value of n be as large as possible since this exponent determines the degree to which the resistors depart from ohmic characteristics.
  • Silicon carbide varistors are most widely used as nonlinear resistors and are manufactured by mixing fine particles of silicon carbide with water, ceramic binder and/ or conductive material such as graphite or metal powder, pressing the mixture in a mold to the desired shape, and then drying and firing the pressed body in air or non-oxidizing atmosphere.
  • Silicon carbide varistors with conductive materials are characterized by a low electric resistance, i.e. a low value of C and a low value of 11 whereas silicon carbide varistors without conductive materials have a high electric resistance, i.e. a high value of C and a high value of n. It has been diflicult to manufacture silicon carbide varistors characterized by a high n and a low C.
  • silicon carbide varistors with graphite have been known to exhibit n values from 2.5 to 3.3 and C- values from. 6 to 13 at agiven current of 100 ma., and
  • silicon carbide varistors without graphite show n-values from 4 to 7 and C-values from 30 to 800 at a given current of 1 ma. with respect to a given size of varistor, e.g. 30 mm. in diameter and 1 mm. in thickness.
  • Conventional rectifiers comprising selenium or cuprous oxide have an n-value less than 3 and a C-value of 5 to 10 at a given current of ma. with respect to a specimen size of 20 mm. in diameter. In this case, the thickness of sample does not affect the C-value.
  • a germanium or silicon p-n junction resistor has an extremely high value of 11 but its C-value is constant, e.g. of the order of 0.3 or 0.7 at a given current of 100 ma. because its diffusion voltage in the V-I characteristics is constant and cannot be changed remarkably. It is necessary for obtaining a desirable C-value to combine several diodes in series and/or in parallel. Another disadvantage of such diodes is their complicated steps involved in their manufacture, with resultant high cost. As a practical matter, the use of diode resistors is not widespread at the present in view of their high cost even though they may have a high value of n.
  • An object of this invention is to provide a non-linear resistor having a high value of n and a low value of C.
  • a further object of this invention is to provide a nonlinear resistor capable of being made by a simple manufacturing method which results in a low cost.
  • a further object of this invention is to provide a nonlinear resistor characterized by a high stability to temperature, humidity and electric load.
  • Another object of this invention is to provide a nonlinear resistor, the C-value of which can be controlled.
  • reference character 10 designates, as a whole, a non-linear resistor having, as its active element, a sintered wafer 1 of electrically conductive ceramic material according to the present invention.
  • Sintered water 1 is prepared in a manner hereinafter set forth, and is provided with a pair of electrodes 2 and 3 having specified compositions and applied in a suitable manner hereinafter set forth, on two opposite surfaces of the wafer.
  • the wafer 1 is a sintered plate having any one of various shapes such as circular, square, rectangular, etc.
  • Wire leads 5 and 6 are attached conductively to the electrodes 2 and 3, respectively, by a connection means 4 (solder or the like).
  • sintered wafer 1 consists essentially of, as an active ingredient, zinc oxide (ZnO). It is preferable that said zinc oxide have incorporated therein a minor proportion of an additive selected from the group consisting of aluminum oxide (A1 0 iron oxide (Fe O bismuth oxide (Bi O magnesium oxide (MgO), calcium oxide (CaO), nickel oxide (NiO), cobalt oxide (C00), niobium oxide (Nb O tantalum oxide (Ta O zirconium oxide (ZrO tungsten oxide (W0 cadmium oxide (CdO), and chromium oxide (Cr O It has been discovered according to the invention that said sintered body 1 produces a superior non-linearity of the electrical characteristics when it is provided with silver electrodes prepared by applying silver paint to opposite surfaces thereof and firing at 100 C. to 850 C. in an oxidizing atmosphere such as air and oxygen.
  • an additive selected from the group consisting of aluminum oxide (A1 0 iron oxide (Fe O bismuth oxide (Bi O magnesium
  • non-linear resistors 3 4 vary with the compositions of the sintered body and elecnitrogen and argon when it is desired to reduce the electrodes, and their preparation method. trical resistivity.
  • the electrical resistivity also can be Since the non-linearity of the novel resistors is atreduced by air-quenching from the sintering temperature tributed to a. non-ohmic contact between said sintered to room temperature even when the pressed bodies are body 1 and electrodes 2 and 3, it is necessary for obtain- 5 fired in air.
  • the mixtures may be preliminarily calcined at 700 positions of the sintered body 1 and the electrodes 2 and to 1000 C. and pulverizedfor easy fabrication in the positions of the sintered body 1 and the elecsubsequent pressing step.
  • the mixture to be pressed may trodes2 and 3. be admixed with a suitable binder such as water, poly- It is necessary for achieving a low value of C of revinyl alcohol, etc. sultant non-linear resistors that the sintered body have an It is advantageous that the sintered body he lapped electrical resistivity less than 10 ohm-cm. said electrical at the opposed surfaces by abrasive powder such as siliresistivity being measured by a four point method in a per con carbide in a particle size of 300 meshes to 1500 se conventional way. meshes.
  • Table 1 shows operable and optimal compositions of The sintered bodies are coated at the opposed surfaces sintered body 1 for producing a non-linear resistor having thereof by a silver electrode paint in a per se convenan n-value higher than 3 and a high stability with temtional manner such as by a spray method, screen printing perature, humidity and electric load. method or brushing method.
  • the silver Table 2 shows operable and optimal compositions of electrode paint have a solid ingredient composition as silver electrodes 2 and 3 after heating for curing in order defined in Tables 2 and 3 after it is fired at 100 C. to to produce the novel non-linear resistors in accordance 850 C. in air. Solid ingredients having compositions with the invention.
  • Tables 2 and 3 can be prepared in a per se conventional manner by mixing commercially available powders with organic resin such as epoxy, vinyl and phenol resin in an organic solvent such as butyl acetate, toluene
  • Table 3 shows optimal combinations of sintered body 1 and silver electrodes 2, 3 for producing non-linear resistors having a C-value lower than 6 at a given current of 100 ma., an n-value higher than 4 and a high stabili Or the like so as to produce silver electrode paints.
  • the silver powder may be in the form of metallic In the Tables 2 and 3, indicated in the specification, silver, or in the form of silver carbonate or silver oxide,
  • Particle slze of solid mgredients also are Zno Addmve Zno Addltwe required to be controlled in the range of 0.1/l. to 51.1.. 00 0 n 99.95 to 90.0.... 0.05 to 10, A1103... 99.9 to 98.0..-. 0.1 to 2.0, A1903 40 Lead f be apphed to l sllver ele.ctrodes m a 99.95 r 0 9 .8--- 8.82%018, 6183.-- 93.3 0 3. 8% 0 9183 per se conventional manner by using conventional solder 99.95o9.... o ,l23- 9.0. .o.,iz 99.95 to 90.0 0.05 to 10, MgO 99.9 to 98.
  • Mg() havlng low lti g polnt. lt 1s convenient to employer t0 gag 9 to 2.0, gag conductive adhesive comprising silver powder and resin 0 i to 2.0 i 9995 to (105m m, 000" Y in an organic solvent for connecting the lead wires to the 99.95 to 90.0--.-- 0.05 to 10, Nb205--- silver electrodes.
  • Non-linear resistors according to this invention have a high stability to temperature and in the load life test, which is carried out at C. at a rating power for 500 hours.
  • the n-valve and C-value do not change remark- TAB LE 2 [Operable Composition of Electrode, Wt. Percent] TABLE 3.OPTIMAL COMBINATIONS OF SINTERED BODY AND ELECTRODE Composition of Sintered Body (M01. Percent) Composition of Electrode (Wt.
  • the sintered body 1 can be prepared by a per se well ably after heating cycles and load life test. It is preferable known ceramic technique.
  • the mixtures are proof resin such as epoxy resin and phenol resin in a per dried and pressed in a mold into desired shapes at a 70 se well known manner. 1 pressure from 100 kg./cm. to 1000 kg./cm.
  • the pressed it has been discovered tha bodies are sintered in air at 1250" C. to 1450 C.
  • the pressed bodies are linear resistors.
  • the n-valve will not be optimal when preferably sintered in IlOn-QXidiZing atmosphere such as 75 the applied silver electrode paint is heated in a n0n-oxidiging atmosphere such as nitrogen and hydrogen for curing. It is necessary for obtaining a high n-value that the applied silver electrode paint be cured by heating in an oxidizing atmosphere such as air and oxygen.
  • Silver electrodes prepared by any other method than by silver painting result in a poor n-value.
  • the sintered body does not produce a non-linear resistor when it is provided with silver electrodes at the opposite surfaces by electroless plating or electolytic plating in conventional manner.
  • Silver electrodes prepared by vacuum evaporation or chemical deposition result in an n-value less than 3.
  • the mixture is dried and pressed in a mold into a disc of 13 mm. in diameter and 2.5 mm. in thickness at the pressure of 340 kg./cm.
  • the pressed body is sinteredin air at 1350 C. for 1 hour, and then quenched to room temperature (about 15 to about 30 C.).
  • the sintered disc is lapped at the opposite surfaces thereof by silicon carbide in a particle size of 600 meshes. Resulting sintered disc has a size of 10 mm. in diameter and 1.5 mm. in thickness.
  • the sintered disc is coated at the Opposite surfaces thereof with a silver electrode paint by a conventional brushing method.
  • the silver electrode paint employed has the solid ingredient composition according to Table 5 and is prepared by mixing with vinyl resin in amyl acetate. The coated disc is fired at 500 C. for 30 minutes in air.
  • Lead wires are attached to the silver electrodes by means of silver paint.
  • the electric characteristics of the resultant resistor and of other similarly prepared resistors are shown in Table 4.
  • EXAMPLE 2 A sintered disc in a composition of 99.5 mol. percent of zinc oxide and 0.5 mol. percent of iron oxide is prepared in the same manner as that in Example 1.
  • the sintered disc has a size of 10 mm. in diameter and 1.5 mm. in thickness after lapping.
  • Various silver electrode paints are applied to the opposite surfaces of the sintered disc and fired at 500 C. for 30 minutes in air.
  • the silver electrode paints have solid ingredient compositions shown in Table 6 and are prepared by mixing 100 weight parts of said solid ingredient compositions with 1 to 20 weight parts of epoxy resin in 20 to 40 weight parts of butyl alcohol.
  • the resultant non-linear resistors exhibit desirable C-values and n-values as indicated in Table 6. It will be readily understood that the electrode compositions have a great effect on the electrical characteristics of the resultant non-linear resistors.
  • a non-linear resistor comprising a sintered wafer consisting essentially of zinc oxide, and silver paint electrodes applied to opposite surfaces of said sintered wafer, said electrodes consisting essentially of fired silver paint.
  • zinc oxide ZnO
  • ZnO zinc oxide
  • Al oxide A1 0 iron oxide (Fe O bismuth oxide (Bi O magnesium oxide (MgO), calcium oxide (C210) and nickel oxide (NiO).
  • CdO cadmium oxide
  • CuO cupric oxide
  • iron oxide Fe O and said silver electrodeshave the composition comprising 80 'to 98 wt. percent of silver, 1,2 to 17 Wt. percent of lead oxide (PbO), 0.1 to 6.0 wt. percent of silicon dioxide (SiO 0.06 to 6.0 wt. percent of boron trioxide (B 0 0 to 2.0 wt. percent of bismuth oxide (Bi O 0 to 2.0 wt. percent of cadmium oxide (CdO) and 0 to 2.0 wt.'percent of cupric oxide (CuO).
  • PbO lead oxide
  • SiO 0.06 to 6.0 wt. percent of boron trioxide B 0 0 to 2.0 wt. percent of bismuth oxide (Bi O 0 to 2.0 wt. percent of cadmium oxide (CdO) and 0 to 2.0 wt.'percent of cupric oxide (CuO).

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermistors And Varistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
US637492A 1966-05-16 1967-05-10 Non-linear resistors Expired - Lifetime US3496512A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP41031594A JPS521113B1 (enrdf_load_html_response) 1966-05-16 1966-05-16

Publications (1)

Publication Number Publication Date
US3496512A true US3496512A (en) 1970-02-17

Family

ID=12335503

Family Applications (1)

Application Number Title Priority Date Filing Date
US637492A Expired - Lifetime US3496512A (en) 1966-05-16 1967-05-10 Non-linear resistors

Country Status (6)

Country Link
US (1) US3496512A (enrdf_load_html_response)
JP (1) JPS521113B1 (enrdf_load_html_response)
DE (1) DE1665135B1 (enrdf_load_html_response)
FR (1) FR1565333A (enrdf_load_html_response)
GB (1) GB1130108A (enrdf_load_html_response)
NL (1) NL141685B (enrdf_load_html_response)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3764951A (en) * 1972-02-16 1973-10-09 Mitsubishi Mining & Cement Co Non-linear resistors
US3808045A (en) * 1971-05-28 1974-04-30 A Knyazhev Method of manufacture of electric contacts
US3856567A (en) * 1972-08-04 1974-12-24 J Pitha Electrode for porous ceramic and method of making same
US3857174A (en) * 1973-09-27 1974-12-31 Gen Electric Method of making varistor with passivating coating
US3872582A (en) * 1972-12-29 1975-03-25 Matsushita Electric Ind Co Ltd Process for making a voltage dependent resistor
DE2500291A1 (de) 1974-02-20 1975-08-21 Matsushita Electric Ind Co Ltd Spannungsabhaengiger widerstand
US3903494A (en) * 1973-09-27 1975-09-02 Gen Electric Metal oxide varistor with coating that enhances contact adhesion
US3958209A (en) * 1974-02-28 1976-05-18 Nippondenso Co., Ltd. High temperature thermistor
US4061088A (en) * 1975-11-13 1977-12-06 Toyota Jidosha Kogyo Kabushiki Kaisha Electric detonating fuse assembly
US4073971A (en) * 1973-07-31 1978-02-14 Nobuo Yasujima Process of manufacturing terminals of a heat-proof metallic thin film resistor
US4103619A (en) * 1976-11-08 1978-08-01 Nasa Electroexplosive device
DE2835562A1 (de) * 1977-08-18 1979-03-01 Trw Inc Material fuer einen glasartigen elektrischen widerstand und verfahren zu dessen herstellung
US4172922A (en) * 1977-08-18 1979-10-30 Trw, Inc. Resistor material, resistor made therefrom and method of making the same
US5153554A (en) * 1990-05-08 1992-10-06 Raychem Corp. Low voltage varistor array
US5569495A (en) * 1995-05-16 1996-10-29 Raychem Corporation Method of making varistor chip with etching to remove damaged surfaces
US5583734A (en) * 1994-11-10 1996-12-10 Raychem Corporation Surge arrester with overvoltage sensitive grounding switch
US6127040A (en) * 1996-08-26 2000-10-03 Siemens Matsushita Components Gmbh & Co. Kg Electroceramic component and method of manufacture thereof
US6163245A (en) * 1997-12-22 2000-12-19 Kabushiki Kaisha Toshiba Nonlinear resistor with electrodes formed by plasma spraying
US20090127110A1 (en) * 2006-09-11 2009-05-21 Mitsubishi Electric Corporation Method of manufacturing electrode for electrical-discharge surface treatment, and electrode for electrical-discharge surface treatment
US10121775B2 (en) 2013-11-21 2018-11-06 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip with built-in ESD protection
CN118955110A (zh) * 2024-07-26 2024-11-15 横店集团东磁股份有限公司 一种镍锌铜铁氧体材料及其制备方法与应用

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5018959B1 (enrdf_load_html_response) * 1968-11-08 1975-07-03
JPS5018960B1 (enrdf_load_html_response) * 1969-09-01 1975-07-03
DE2820118C2 (de) * 1977-06-23 1985-04-11 Kombinat Veb Keramische Werke Hermsdorf, Ddr 6530 Hermsdorf Oxid-Varistor und Verfahren zu dessen Herstellung
DE2848454C2 (de) * 1978-11-08 1982-12-16 Siemens AG, 1000 Berlin und 8000 München Anordnung zur Halterung von elektrische Anlagen gegen Überspannungen schützenden Elementen

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1822742A (en) * 1927-06-13 1931-09-08 Gen Electric Discharge device and resistance material
US2027277A (en) * 1929-08-16 1936-01-07 Habann Erich Contact device
GB618966A (en) * 1946-06-14 1949-03-02 Standard Telephones Cables Ltd Improvements in or relating to electric thermally sensitive resistance elements
CA479580A (en) * 1951-12-18 W. Davis Gustoff Conductive devices
US2786819A (en) * 1955-11-17 1957-03-26 Gen Motors Corp Resistor
US2977558A (en) * 1958-06-19 1961-03-28 Cutler Hammer Inc Thermal responsive resistance devices
US3037942A (en) * 1959-11-02 1962-06-05 Gen Electric Positive temperature coefficient of resistivity resistor
US3075122A (en) * 1960-05-02 1963-01-22 Westinghouse Electric Corp Electroluminescent system, electrically non-linear element and method
US3219480A (en) * 1961-06-29 1965-11-23 Gen Electric Method for making thermistors and article
US3264229A (en) * 1964-02-10 1966-08-02 American Zinc Lead & Smelting Method of making conductive zinc oxide

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2887632A (en) * 1952-04-16 1959-05-19 Timefax Corp Zinc oxide semiconductors and methods of manufacture
GB874257A (en) * 1960-03-02 1961-08-02 Controllix Corp Improvements in or relating to circuit-breaker actuating mechanisms

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA479580A (en) * 1951-12-18 W. Davis Gustoff Conductive devices
US1822742A (en) * 1927-06-13 1931-09-08 Gen Electric Discharge device and resistance material
US2027277A (en) * 1929-08-16 1936-01-07 Habann Erich Contact device
GB618966A (en) * 1946-06-14 1949-03-02 Standard Telephones Cables Ltd Improvements in or relating to electric thermally sensitive resistance elements
US2786819A (en) * 1955-11-17 1957-03-26 Gen Motors Corp Resistor
US2977558A (en) * 1958-06-19 1961-03-28 Cutler Hammer Inc Thermal responsive resistance devices
US3037942A (en) * 1959-11-02 1962-06-05 Gen Electric Positive temperature coefficient of resistivity resistor
US3075122A (en) * 1960-05-02 1963-01-22 Westinghouse Electric Corp Electroluminescent system, electrically non-linear element and method
US3219480A (en) * 1961-06-29 1965-11-23 Gen Electric Method for making thermistors and article
US3264229A (en) * 1964-02-10 1966-08-02 American Zinc Lead & Smelting Method of making conductive zinc oxide

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3808045A (en) * 1971-05-28 1974-04-30 A Knyazhev Method of manufacture of electric contacts
US3764951A (en) * 1972-02-16 1973-10-09 Mitsubishi Mining & Cement Co Non-linear resistors
US3856567A (en) * 1972-08-04 1974-12-24 J Pitha Electrode for porous ceramic and method of making same
US3872582A (en) * 1972-12-29 1975-03-25 Matsushita Electric Ind Co Ltd Process for making a voltage dependent resistor
US4073971A (en) * 1973-07-31 1978-02-14 Nobuo Yasujima Process of manufacturing terminals of a heat-proof metallic thin film resistor
US3857174A (en) * 1973-09-27 1974-12-31 Gen Electric Method of making varistor with passivating coating
US3903494A (en) * 1973-09-27 1975-09-02 Gen Electric Metal oxide varistor with coating that enhances contact adhesion
DE2500291A1 (de) 1974-02-20 1975-08-21 Matsushita Electric Ind Co Ltd Spannungsabhaengiger widerstand
DE2500291B2 (de) 1974-02-20 1977-02-10 Matsushita Electric Industrial Co., Ltd., Kadotna, Osaka (Japan) Spannungsabhaengiger widerstand mit einer spannungsabhaengigkeit allein aufgrund der masse seines gesinterten koerpers
US3958209A (en) * 1974-02-28 1976-05-18 Nippondenso Co., Ltd. High temperature thermistor
US4061088A (en) * 1975-11-13 1977-12-06 Toyota Jidosha Kogyo Kabushiki Kaisha Electric detonating fuse assembly
US4103619A (en) * 1976-11-08 1978-08-01 Nasa Electroexplosive device
DE2835562A1 (de) * 1977-08-18 1979-03-01 Trw Inc Material fuer einen glasartigen elektrischen widerstand und verfahren zu dessen herstellung
US4146677A (en) * 1977-08-18 1979-03-27 Trw Inc. Resistor material, resistor made therefrom and method of making the same
US4172922A (en) * 1977-08-18 1979-10-30 Trw, Inc. Resistor material, resistor made therefrom and method of making the same
US5153554A (en) * 1990-05-08 1992-10-06 Raychem Corp. Low voltage varistor array
US5583734A (en) * 1994-11-10 1996-12-10 Raychem Corporation Surge arrester with overvoltage sensitive grounding switch
US5569495A (en) * 1995-05-16 1996-10-29 Raychem Corporation Method of making varistor chip with etching to remove damaged surfaces
WO1996036978A1 (en) * 1995-05-16 1996-11-21 Raychem Corporation Method of making varistor chips
US6127040A (en) * 1996-08-26 2000-10-03 Siemens Matsushita Components Gmbh & Co. Kg Electroceramic component and method of manufacture thereof
US6163245A (en) * 1997-12-22 2000-12-19 Kabushiki Kaisha Toshiba Nonlinear resistor with electrodes formed by plasma spraying
US20090127110A1 (en) * 2006-09-11 2009-05-21 Mitsubishi Electric Corporation Method of manufacturing electrode for electrical-discharge surface treatment, and electrode for electrical-discharge surface treatment
US20120056133A1 (en) * 2006-09-11 2012-03-08 Ihi Corporation Method of manufacturing electrode for electrical-discharge surface treatment, and electrode for electrical-discharge surface treatment
US9347137B2 (en) 2006-09-11 2016-05-24 Ihi Corporation Method of manufacturing electrode for electrical-discharge surface treatment, and electrode for electrical-discharge surface treatment
US10121775B2 (en) 2013-11-21 2018-11-06 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip with built-in ESD protection
CN118955110A (zh) * 2024-07-26 2024-11-15 横店集团东磁股份有限公司 一种镍锌铜铁氧体材料及其制备方法与应用

Also Published As

Publication number Publication date
NL141685B (nl) 1974-03-15
JPS521113B1 (enrdf_load_html_response) 1977-01-12
FR1565333A (enrdf_load_html_response) 1969-05-02
NL6706772A (enrdf_load_html_response) 1967-11-17
DE1665135B1 (de) 1972-05-25
GB1130108A (en) 1968-10-09

Similar Documents

Publication Publication Date Title
US3496512A (en) Non-linear resistors
US3689863A (en) Voltage dependent resistors in a surface barrier type
US3663458A (en) Nonlinear resistors of bulk type
US3905006A (en) Voltage dependent resistor
US3503029A (en) Non-linear resistor
US3872582A (en) Process for making a voltage dependent resistor
US3764566A (en) Voltage nonlinear resistors
US3611073A (en) Diode comprising zinc oxide doped with gallium oxide used as a voltage variable resistor
US3723175A (en) Nonlinear resistors of bulk type
US3903226A (en) Method of making voltage-dependent resistors
US3598763A (en) Manganese-modified zinc oxide voltage variable resistor
EP0316015A2 (en) Material for resistor body and non-linear resistor made thereof
US3863193A (en) Voltage-nonlinear resistors
US3778743A (en) Voltage-nonlinear resistors
US3658725A (en) Nonlinear resistor and nonlinear resistor composition
US3687871A (en) Nonlinear resistor and nonlinear resistor composition
US3682841A (en) Voltage dependent resistors in a bulk type
US3670221A (en) Voltage variable resistors
US4038217A (en) Ceramics having non-linear voltage characteristics and method of producing the same
US3570002A (en) Non-linear resistor of sintered zinc oxide
US3766098A (en) Voltage nonlinear resistors
US3699058A (en) Uranium-modified zinc oxide voltage variable resistor
US3594616A (en) Ceramic capacitor comprising semiconductive barium titanate body and silver alloy electrodes containing minor amounts of lead oxide and bismuth oxide
DE2215933C3 (de) Spannungsabhängige Masse widerstände
US4474718A (en) Method of fabricating non-linear voltage limiting device