US3442823A - Semiconductor crystals of fibrous structure and method of their manufacture - Google Patents

Semiconductor crystals of fibrous structure and method of their manufacture Download PDF

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Publication number
US3442823A
US3442823A US501918A US3442823DA US3442823A US 3442823 A US3442823 A US 3442823A US 501918 A US501918 A US 501918A US 3442823D A US3442823D A US 3442823DA US 3442823 A US3442823 A US 3442823A
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US
United States
Prior art keywords
phase
fibrous
semiconductor
inclusions
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US501918A
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English (en)
Inventor
Alfred Muller
Manfred Wilhelm
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Siemens AG
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Siemens AG
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Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
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Publication of US3442823A publication Critical patent/US3442823A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/04—Unidirectional solidification of eutectic materials by zone-melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Definitions

  • Ordinary polycrystals consist of a coalesced bunch of randomly oriented and randomly shaped grains.
  • the polycrystals according to the invention are formed of elongated fibrous grains or fibers.
  • the longitudinal dimension of these monocrystalline fibers may be 1 cm. for example but, in general, is often much longer. Lengths of cm. and more have been measured.
  • the fiber diameter varies between values in the order of magnitude of 1 micron and a few millimeters.
  • the seed need not be elongated in any particular direction but it must be fused to the bar of semiconductor material with the axes of the fibrous crystallites in the seed oriented longitudinally of the bar.
  • the fibrous crystallites in the polycrystalline seed are elongated twin-type monocrystals.
  • a temperature gradient can be formed at the liquid-to-solid boundary which extends parallel to the crystal growing direction at least on the average, taken over the entire boundary.
  • Such a liquid-to-solid boundary can be maintained by suitable temperature control and observing a suitable crystallization rate at the growing front of the solidifying crystal, these expedients being known as such.
  • the inclusions are uniformly distributed within the polycrystal over its entire cross section and over its entire length.
  • Inclusions of needle-shaped configuration may have a thickness in the order of magnitude of 1 micron and a length in the order of 50 microns.
  • greatly different dimensions of thickness and length have been observed, depending upon the specific properties of the particular two-phase system and also depending upon the freezing method employed.
  • needle thicknesses of 0.1 up to 10 microns or more have been measured with different two-phase compositions.
  • the needles may have a length ten times or more larger or smaller than mentioned above, although within one and the same crystal made by a single uniform method and employing a uniform rate of freezing, only slight variations about an average thickness and length of the needles have been observed.
US501918A 1965-03-18 1965-10-22 Semiconductor crystals of fibrous structure and method of their manufacture Expired - Lifetime US3442823A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0096033 1965-03-18
DES0096034 1965-03-18

Publications (1)

Publication Number Publication Date
US3442823A true US3442823A (en) 1969-05-06

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ID=25998003

Family Applications (1)

Application Number Title Priority Date Filing Date
US501918A Expired - Lifetime US3442823A (en) 1965-03-18 1965-10-22 Semiconductor crystals of fibrous structure and method of their manufacture

Country Status (8)

Country Link
US (1) US3442823A (de)
AT (1) AT258421B (de)
BE (1) BE675189A (de)
CH (1) CH453310A (de)
DE (2) DE1519869B1 (de)
GB (1) GB1106314A (de)
NL (1) NL6602216A (de)
SE (1) SE315267B (de)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624467A (en) * 1969-02-17 1971-11-30 Texas Instruments Inc Monolithic integrated-circuit structure and method of fabrication
US3651385A (en) * 1968-09-18 1972-03-21 Sony Corp Semiconductor device including a polycrystalline diode
US3711718A (en) * 1969-12-09 1973-01-16 Siemens Ag Apparatus for detecting infrared radiation
US3925803A (en) * 1972-07-13 1975-12-09 Sony Corp Oriented polycrystal jfet
US3953876A (en) * 1973-06-07 1976-04-27 Dow Corning Corporation Silicon solar cell array
US4532000A (en) * 1983-09-28 1985-07-30 Hughes Aircraft Company Fabrication of single crystal fibers from congruently melting polycrystalline fibers
US4722764A (en) * 1983-09-20 1988-02-02 Wacker-Chemitronic Gesellschaft Fur Elektronic-Grundstoffe Mbh Method for the manufacture of dislocation-free monocrystalline silicon rods
US4984037A (en) * 1986-12-11 1991-01-08 Gte Laboratories Incorporated Semiconductor device with conductive rectifying rods

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2443743A1 (fr) * 1978-12-04 1980-07-04 Colburn William Dispositif electronique contenant une matiere composite et son procede de realisation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2739088A (en) * 1951-11-16 1956-03-20 Bell Telephone Labor Inc Process for controlling solute segregation by zone-melting
US3259582A (en) * 1959-11-30 1966-07-05 Siemens Ag Mix-crystal semiconductor devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE399896C (de) * 1924-07-31 Frederick Shand Goucher Dr Verfahren zur Herstellung von Metalldraehten oder -faeden, insbesondere aus schwerschmelzbaren Metallen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2739088A (en) * 1951-11-16 1956-03-20 Bell Telephone Labor Inc Process for controlling solute segregation by zone-melting
US3259582A (en) * 1959-11-30 1966-07-05 Siemens Ag Mix-crystal semiconductor devices

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651385A (en) * 1968-09-18 1972-03-21 Sony Corp Semiconductor device including a polycrystalline diode
US3624467A (en) * 1969-02-17 1971-11-30 Texas Instruments Inc Monolithic integrated-circuit structure and method of fabrication
US3711718A (en) * 1969-12-09 1973-01-16 Siemens Ag Apparatus for detecting infrared radiation
US3925803A (en) * 1972-07-13 1975-12-09 Sony Corp Oriented polycrystal jfet
US3953876A (en) * 1973-06-07 1976-04-27 Dow Corning Corporation Silicon solar cell array
US4722764A (en) * 1983-09-20 1988-02-02 Wacker-Chemitronic Gesellschaft Fur Elektronic-Grundstoffe Mbh Method for the manufacture of dislocation-free monocrystalline silicon rods
US4532000A (en) * 1983-09-28 1985-07-30 Hughes Aircraft Company Fabrication of single crystal fibers from congruently melting polycrystalline fibers
US4984037A (en) * 1986-12-11 1991-01-08 Gte Laboratories Incorporated Semiconductor device with conductive rectifying rods

Also Published As

Publication number Publication date
DE1519869B1 (de) 1970-01-15
DE1519868A1 (de) 1970-04-16
BE675189A (de) 1966-05-16
NL6602216A (de) 1966-09-19
AT258421B (de) 1967-11-27
CH453310A (de) 1968-06-14
GB1106314A (en) 1968-03-13
SE315267B (de) 1969-09-29
DE1519868B2 (de) 1971-07-29

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