US3419767A - Controllable electrical resistance - Google Patents

Controllable electrical resistance Download PDF

Info

Publication number
US3419767A
US3419767A US600105A US60010566A US3419767A US 3419767 A US3419767 A US 3419767A US 600105 A US600105 A US 600105A US 60010566 A US60010566 A US 60010566A US 3419767 A US3419767 A US 3419767A
Authority
US
United States
Prior art keywords
layer
resistance
voltage
semiconductor
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US600105A
Other languages
English (en)
Inventor
Dahlberg Reinhard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Electronic GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Application granted granted Critical
Publication of US3419767A publication Critical patent/US3419767A/en
Assigned to TELEFUNKEN ELECTRONIC GMBH reassignment TELEFUNKEN ELECTRONIC GMBH ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: TELEFUNKEN PATENTVERWERTUNGSGESELLSCHAFT M.B.H., A GERMAN LIMITED LIABILITY COMPANY
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38—Cooling arrangements using the Peltier effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Definitions

  • ABSTRACT OF THE DISCLOSURE A controllable electrical resistance in the form of a first layer made of semiconductor or insulating material, there being an electrically conductive layer on the resistance layer and two thermoelectric contacts on the electrically conductive layer and forming therewith a Peltier element. A voltage is applied to the contacts which causes those electrons that are not in thermal equilibrium with their surroundings to pass out of the one of the contacts through the electrically conductive layer and into the resistance layer, thereby to modulate the resistance thereof.
  • a high-ohmic semiconductor or insulating layer represents a potential peak for the electrons, the magnitude of which peak is determined by the electron affinity of the electrons in the semiconductor or insulating layer. If the high-ohmic semiconductor or insulating layer is less than 100 A. thick, there nevertheless exists the finite possibility for the electrons to overcome this potential peak if their thermal energy is less than the electron afiinity or work function.
  • the specific resistance of thin semiconductor or insulating layers varies very much with the thickness of the layer. If a voltage is applied across a very thin semiconductor or insulating layer, i.e., a layer having a thickness of about 100 A., the current flowing through the layer is formed, primarily, by electrons whose energy is less than their affinity in the semiconductor or insulating layer. However, this tunnel current decreases very rapidly with increasing thickness of the semiconductor or insulating layer and the current that then still flows is produced only by electrons whose thermal energy is greater than the electron afiinity, that is to say, by so-called hot electrons.
  • the object of the present invention to provide an electrical element which operates with hot electrons and which can, for example, be used as an active element.
  • the present invention resides in an electric element in the form of a controllable resistance, wherein a thin layer made of a semiconductor or insulating material carries an electrically conductive nited States Patent 0 3,419,767 Patented Dec. 31, 1968 "ice layer, which itself carries two thermoelectric contacts so that these contacts together with the electrically conductive layer form a Peltier element, there being applied to the two contacts such a voltage that those electrons which are not in thermal equilibrium with their surroundings pass out of one of the contacts through the electrically conductive layer and into the thin semiconductor or insulating layer and modulate the value of its resistance.
  • the invention thus resides, basically, in that an electrical resistance is modulated by hot electrons which are not in thermal equilibrium with their surroundings and which are injected from a thermoelectric contact into the resistance.
  • the controllable electrical resistance according to the present invention thus has a technological advantage over conventional semiconductor arrangements or semiconductor amplifiers in that the element according to the present invention operates only with electrons, that is to say, it is an element working with majority charge carriers rather than minority charges carriers. Since the transient or recovery time in the electron gas is only between 10 to 10 seconds, the arrangement according to the present invention has a very high frequency limit.
  • the voltages applied to the two legs of the Peltier element are preferably smaller than twice the Peltier voltage of the thermoelement. Besides this voltage, there is applied to the resistance, between the electrically conductive layervia a thermoelectric contactand the collector electrode which is arranged on the opposite side of the resistance, a voltage which is no greater than the breakdown voltage of the resistance.
  • the electric resistance which is modulated by the hot electrons consists, preferably, of a semiconductor or insulating layer which is less than 10 A. thick, the layer preferably being more than 10 A. thick. If the resistance material is a semiconductor, the energy gap of the semiconductor material should preferably be greater than 0.7 electron volt. If the resistance layer is :an insulating layer, the insulating material may be an oxide, a nitride, a halide, an organic insulator or a vacuum gap.
  • the thermoelectric N-legs and P-legs of the thermoelement may, for example, consist of n-conductive and p-conductive semiconductor materials. The thermoelement may also be con stituted by metallic couples.
  • controllable electric resistance according to the present invention is suited, for example, for use in integrated circuits or in microcircuits and for amplifying very high frequencies. Since the thermal strength increases very markedly with decreasing temperatures, the element according to the present invention can be used to advantage at the temperatures of liquid nitrogen, hydrogen or helium.
  • FIGURE 1 is a sectional view of one embodiment of a resistance according to the present invention.
  • FIGURE 2 is a sectional view of another embodiment of a resistance according to the present invention.
  • FIGURE 3 is a plan view of still another embodiment of a resistance according to the present invention.
  • FIGURE 4 is a plan view of yet another embodiment of a resistance according to the present invention, showing a particular contact configuration.
  • FIGURE 1 shows a controllable electric resistance according to the present invention, the same comprising an electrical resistance 1 made of a semiconductor material or insulating material, a thin layer serving as the thermoelectrical P-leg 2 and two thermoelectric contacts 3 and 4, serving as the N-legs.
  • the resistance 1 is in the form of a layer on a collector electrode 5.
  • the electrical resistance may be made, for example, of SiO, A1 BeO, SiC, Si, GaAs and so on.
  • the resistance may also consist of organic layers or of a vacuum gap.
  • the P-leg 2 of the thermoelement of FIGURE 1 consists of a layer of p-conductive thermoelectric material, as, for example, p-Si, p-InSb, and so on.
  • the two N- contacts 3 and 4 consist of a second thermoelectric mate rial, as, for example, Bi, p' -Si, p -Ge, and so on.
  • the circuit arrangement of FIGURE 1 represents an active four-terminal circuit.
  • the collector electrode does not, as in the case of FIGURE 1, consist of a metallic layer but of a p-semiconductor 15 which carries an insulating layer 18, preferably an oxide layer.
  • An opening is etched out of the middle of this insulating layer-in a manner known in the manufacture of planar semiconductors-a resistance layer 11 and an n-conductive semiconductor layer 12 being deposited into this opening, the same serving as the resistance and as the N-leg of the thermoelement.
  • the two P-contacts 13 and 14 are metal layers and consist of a metal such as aluminum, chromium-gold, and so on.
  • the metal layers 13 and 14 are not in direct contact with the N-leg 12 which is made of n-conductive semiconductor material, but are separated from the n-conductive material by metal layers 19 and 20 which produce a n -contact and which see to it that the junctions between the P- and N-legs are nonrectifying junctions.
  • the two P-contacts extend laterally on the insulating layer 18.
  • FIGURE 3 shows a multiple arrangement consisting, for example, of thirty-five of the individual Peltier elements shown in FIGURE 2. All of the individual elements are arranged on a common collector electrode 25, which carries the thirty-five insulating resistances and a like number of N-legs. Only the N-legs 22, and not the resistance layers therebelow, are illustrated in FIGURE 3. In the embodiment of FIGURE 3, all of the P-contacts 23, 24 of the individual elements are connected in series. The advantage of this arrangement is that the voltage at the input of the circuit as a whole can be greater than in the case of the individual elements shown in FIGURES l and 2.
  • FIGURE 4 shows an arrangement according to the present invention wherein the P-contacts 33 and 34 have a comblike configuration, the prongs of the combs nesting within each other. Not illustrated in FIGURE 4 is the resistance layer which is below the thermoelectric N- layer 32.
  • a controllable electrical resistance which comprises resistance means forming a thin first layer made of a semiconductor or insulating material, means forming an electrically conductive second layer on the first layer, two thermoelectric contacts on this second layer and forming therewith a Peltier element, and means for applying to the contacts a voltage which causes those electrons that are not in thermal equilibrium with their surroundings to pass out of one of the contacts through the second layer and into the first layer, thereby to modulate the resistance thereof.
  • thermoelectric elements according to the present invention.
  • the element of FIGURE 1 has a resistance layer 1 which is made of SiO and has a thickness of .01 mil, a thermoelectric p-layer 2 which is made of p+-silicon and has a thickness of .01 mil, and two N-contacts 3 and 4 made of aluminium.
  • the collector electrode 5 is made of n+-silicon and has a thickness of 10 mils.
  • the voltages applied by voltage sources 6 and 7 are 10-100 mv. and 10-100 v., respectively.
  • the element of FIGURE 2 has an insulating layer 18 which is made of SiO and has a thickness of .04 mil, a resistance layer 11 which is made of intrinsic silicon and has a thickness of .1 mil, an N-conductive layer 12 which is made of n -silicon and has a thickness of .1 mil, and P-contacts 13 and 14 made of p+-silicon.
  • the layers 19 and 20 are made of aluminium and have a thickness of .01 mil.
  • the voltages applied by voltage sources 6 and 7 are mv. and 10 v., respectively.
  • a controllable electrical resistance comprising in combination:
  • resistance means forming a thin first layer made of a semiconductor or insulating material
  • thermoelectric contacts on said second layer and forming therewith a Peltier element
  • (f) means for applying across one of said contacts and said collector electrode a second voltage which is no greater than the breakdown voltage of said first layer.
  • a controllable electrical resistance comprising a plurality of serially connected Peltier elements each as defined in claim 1, the same being arranged on a common layer constituting said first layer of each respective Peltier element.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Thermistors And Varistors (AREA)
US600105A 1965-12-08 1966-12-08 Controllable electrical resistance Expired - Lifetime US3419767A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DET29965A DE1283978B (de) 1965-12-08 1965-12-08 Elektronisches Festkoerperbauelement mit durch Ladungstraegerinjektion steuerbarem elektrischem Widerstand
DET0030130 1965-12-27
DET0030180 1965-12-30
DET0030179 1965-12-30

Publications (1)

Publication Number Publication Date
US3419767A true US3419767A (en) 1968-12-31

Family

ID=27437645

Family Applications (4)

Application Number Title Priority Date Filing Date
US600105A Expired - Lifetime US3419767A (en) 1965-12-08 1966-12-08 Controllable electrical resistance
US602407A Expired - Lifetime US3460008A (en) 1965-12-08 1966-12-16 Controllable tunnel diode
US605340A Expired - Lifetime US3495141A (en) 1965-12-08 1966-12-28 Controllable schottky diode
US605341A Expired - Lifetime US3504240A (en) 1965-12-08 1966-12-28 Semiconductor device utilizing heat injection of majority carriers

Family Applications After (3)

Application Number Title Priority Date Filing Date
US602407A Expired - Lifetime US3460008A (en) 1965-12-08 1966-12-16 Controllable tunnel diode
US605340A Expired - Lifetime US3495141A (en) 1965-12-08 1966-12-28 Controllable schottky diode
US605341A Expired - Lifetime US3504240A (en) 1965-12-08 1966-12-28 Semiconductor device utilizing heat injection of majority carriers

Country Status (4)

Country Link
US (4) US3419767A (fr)
DE (1) DE1283978B (fr)
FR (4) FR1504201A (fr)
GB (4) GB1173919A (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE29676E (en) * 1973-09-03 1978-06-20 Nippon Electric Company, Limited Matrix resistors for integrated circuit
US4561006A (en) * 1982-07-06 1985-12-24 Sperry Corporation Integrated circuit package with integral heating circuit
WO1993008600A1 (fr) * 1991-10-15 1993-04-29 Velox Computer Technology, Inc. Dispositif de refroidissement a regulation intrinseque
WO1993020589A1 (fr) * 1992-03-30 1993-10-14 Yater Joseph C Convertisseur thermoelectrique reversible
WO2001022490A1 (fr) * 1999-09-22 2001-03-29 Infineon Technologies Ag Refroidissement selectif de surfaces partielles d'un composant electronique plat
US20120031450A1 (en) * 2009-01-20 2012-02-09 IHP GmbH - Innovations for High Performance Micro- electronics / Leibniz-Institut fur Innovative Mik Thermoelectric semiconductor component

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713909A (en) * 1970-11-06 1973-01-30 North American Rockwell Method of producing a tunnel diode
US3699362A (en) * 1971-05-27 1972-10-17 Ibm Transistor logic circuit
DE2247962C3 (de) * 1972-09-29 1979-03-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thermoelementanordnung auf Halbleiterbasis
US4238759A (en) * 1978-10-20 1980-12-09 University Of Delaware Monolithic Peltier temperature controlled junction
US4754141A (en) * 1985-08-22 1988-06-28 High Technology Sensors, Inc. Modulated infrared source
CA2050843C (fr) * 1990-09-18 1999-08-03 Kazuo Ohtsubo Element antiparasite et circuit electrique incorporant celui-ci
US5837929A (en) * 1994-07-05 1998-11-17 Mantron, Inc. Microelectronic thermoelectric device and systems incorporating such device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3252013A (en) * 1963-01-18 1966-05-17 Varo Thermal oscillator utilizing rate of thermal flow

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE543675A (fr) * 1954-12-15
BE552928A (fr) * 1957-03-18
US3005937A (en) * 1958-08-21 1961-10-24 Rca Corp Semiconductor signal translating devices
US2975638A (en) * 1958-09-18 1961-03-21 Honeywell Regulator Co Electrical hygrometer device
NL269345A (fr) * 1960-09-19
US3254278A (en) * 1960-11-14 1966-05-31 Hoffman Electronics Corp Tunnel diode device
NL283434A (fr) * 1961-09-25
US3258608A (en) * 1963-05-31 1966-06-28 Sperry Rand Corp Thin film signal translating device
US3290127A (en) * 1964-03-30 1966-12-06 Bell Telephone Labor Inc Barrier diode with metal contact and method of making

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3252013A (en) * 1963-01-18 1966-05-17 Varo Thermal oscillator utilizing rate of thermal flow

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE29676E (en) * 1973-09-03 1978-06-20 Nippon Electric Company, Limited Matrix resistors for integrated circuit
US4561006A (en) * 1982-07-06 1985-12-24 Sperry Corporation Integrated circuit package with integral heating circuit
WO1993008600A1 (fr) * 1991-10-15 1993-04-29 Velox Computer Technology, Inc. Dispositif de refroidissement a regulation intrinseque
WO1993020589A1 (fr) * 1992-03-30 1993-10-14 Yater Joseph C Convertisseur thermoelectrique reversible
US5356484A (en) * 1992-03-30 1994-10-18 Yater Joseph C Reversible thermoelectric converter
US5470395A (en) * 1992-03-30 1995-11-28 Yater Joseph C Reversible thermoelectric converter
US5623119A (en) * 1992-03-30 1997-04-22 Yater Joseph C Reversible thermoelectric converter
US5889287A (en) * 1992-03-30 1999-03-30 Yater; Joseph C. Reversible thermoelectric converter
WO2001022490A1 (fr) * 1999-09-22 2001-03-29 Infineon Technologies Ag Refroidissement selectif de surfaces partielles d'un composant electronique plat
US20120031450A1 (en) * 2009-01-20 2012-02-09 IHP GmbH - Innovations for High Performance Micro- electronics / Leibniz-Institut fur Innovative Mik Thermoelectric semiconductor component
US8809667B2 (en) * 2009-01-20 2014-08-19 IHP GmbH—Innovations for High Performance Microelectronics Thermoelectric semiconductor component

Also Published As

Publication number Publication date
FR1506947A (fr) 1967-12-22
US3504240A (en) 1970-03-31
DE1283978B (de) 1968-11-28
DE1514913B2 (de) 1972-11-30
FR1505988A (fr) 1967-12-15
DE1514913A1 (de) 1969-08-14
DE1514911A1 (de) 1969-05-29
US3495141A (en) 1970-02-10
GB1173756A (en) 1969-12-10
DE1514914A1 (de) 1970-04-02
US3460008A (en) 1969-08-05
GB1173575A (en) 1969-12-10
DE1514911B2 (de) 1972-08-17
GB1173919A (en) 1969-12-10
FR1506948A (fr) 1967-12-22
GB1175049A (en) 1969-12-23
DE1514914B2 (de) 1972-12-14
FR1504201A (fr) 1967-12-01

Similar Documents

Publication Publication Date Title
US3419767A (en) Controllable electrical resistance
US2791760A (en) Semiconductive translating device
US2654059A (en) Semiconductor signal translating device
US3304469A (en) Field effect solid state device having a partially insulated electrode
US3159780A (en) Semiconductor bridge rectifier
JPS589366A (ja) トランジスタ
US3506893A (en) Integrated circuits with surface barrier diodes
US3305708A (en) Insulated-gate field-effect semiconductor device
US3699403A (en) Fusible semiconductor device including means for reducing the required fusing current
US3488564A (en) Planar epitaxial resistors
US3214652A (en) Transistor comprising prong-shaped emitter electrode
US3525910A (en) Contact system for intricate geometry devices
US3504239A (en) Transistor with distributed resistor between emitter lead and emitter region
US4126496A (en) Method of making a single chip temperature compensated reference diode
US3265905A (en) Integrated semiconductor resistance element
US3408542A (en) Semiconductor chopper amplifier with twin emitters
US2994811A (en) Electrostatic field-effect transistor having insulated electrode controlling field in depletion region of reverse-biased junction
US3325706A (en) Power transistor
US2862115A (en) Semiconductor circuit controlling devices
US2717343A (en) P-n junction transistor
US3443175A (en) Pn-junction semiconductor with polycrystalline layer on one region
US3201665A (en) Solid state devices constructed from semiconductive whishers
US3116443A (en) Semiconductor device
US2915647A (en) Semiconductive switch and negative resistance
US3612964A (en) Mis-type variable capacitance semiconductor device

Legal Events

Date Code Title Description
AS Assignment

Owner name: TELEFUNKEN ELECTRONIC GMBH, THERESIENSTRASSE 2, D-

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:TELEFUNKEN PATENTVERWERTUNGSGESELLSCHAFT M.B.H., A GERMAN LIMITED LIABILITY COMPANY;REEL/FRAME:004215/0222

Effective date: 19831214