US3354074A - Cylindrical cathode sputtering apparatus including means for establishing a quadrupole magnetic field transverse of the discharge - Google Patents

Cylindrical cathode sputtering apparatus including means for establishing a quadrupole magnetic field transverse of the discharge Download PDF

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US3354074A
US3354074A US574216A US57421666A US3354074A US 3354074 A US3354074 A US 3354074A US 574216 A US574216 A US 574216A US 57421666 A US57421666 A US 57421666A US 3354074 A US3354074 A US 3354074A
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cathode
sputtering
discharge
magnetic field
anode
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Kay Eric
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International Business Machines Corp
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International Business Machines Corp
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Priority to GB1054660D priority Critical patent/GB1054660A/en
Priority claimed from US309159A external-priority patent/US3282816A/en
Priority to DE19641515301 priority patent/DE1515301A1/de
Priority to FR988154A priority patent/FR1417190A/fr
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US574216A priority patent/US3354074A/en
Priority to US574868A priority patent/US3341442A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Definitions

  • the present invention relates to improved apparatus for depositing thin films of material which have been sputtered from a cathode, and more particularly, to such apparatus involving a cylindrical cathode wherein the arrangement of electrodes and associated magnetic field means is such as to increase the deposition efliciency of the device, especially at ultra-low pressures, and provide closer control over sputtering processes.
  • the present invention resolves much of the difficulty here by providing for a novel means of extending the effective interelectrode path (and hence increasing sputtering efficiency) without enlarging the interelectrode spaces.
  • the present invention provides a solution to the above problems and offers advantages over prior art sputtering systems according to a novel sputtering apparatus wherein a novel cathode configuration is specified; wherein a novel magnetic field arrangement is specified; wherein a novel interrelation of electrodes and field-producing means is specified; and wherein novel uniform edge plates are provided for field uniformity at the axial ends of the sputtering vessel.
  • Another object of the invention is to provide improved impact-evaporation devices having a cylindrical cathode wall and balanced magnetic field-producing means.
  • Another object is to radically increase sputtering rates by combining cylindrical electrodes and transverse magnetic fields.
  • Still another object is to provide a sputtering device having reduced interelectrode distances along with improved sputtering efiiciencies by combining a hollow cathode device with quadrupole magnetic field-producing means.
  • Yet another object is to provide a sputtering device without field distortion and edge efiects by providing conductive end plates therein.
  • Yet another object is to reduce the volume of the sputtering device and attenuate the length of the discharge zones by providing a hollow cathode sputtering device in combination with a balanced axially-symmetric magnetic field-producing means.
  • FIG. 1 is a crosssectional, schematic view of a typical prior art sputtering device with planar fixed electrodes, as opposed to the cylindrical removable electrode elements of the inventive sputtering device;
  • FIG. 2 is a schematic representational graph plotting the variations of glow discharge parameters and the location of glow discharge zones along the length of a typical planar sputtering discharge;
  • FIG. 3 is a schematic perspective representation, partly broken away, of a sputtering device according to the invention showing the deposition of the magnetic coils relative to the electrodes;
  • FIG. 4 is a perspective sectional view of a complete sputtering apparatus embodiment according to the invention.
  • FIG. 5 is a schematic sectional view of a device suchas that shown in FIG. 4 illustrating the eiiects of the invention upon the discharge zones and the paths of the ionized electrons under high pressure conditions;
  • FIG. 6 is a perspective sectional view similar to that of FIG. 3 with alternative magnetic field means illustrated;
  • FIG. 7 is a schematic representation similar to FIG. 5 showing discharge parameters under hollow cathode lamp conditions.
  • FIG. 8 is arepresentation showing discharge parameters similar to FIG. 7 for the cylindrical sputtering according to the invention under high vacuum conditions.
  • Vessel 9 which is pressure-resistant so as to accommodate evacuation to low pressures.
  • Vessel 9 may be composed of a ceramic, or alternatively, a metal so as to readily distribute an electric charge.
  • This vessel 9 comprises a glass envelope wherein the walls are at least two inches from the perimeter of the anode.
  • Helmholtz coils M, 91' mounted externally of the envelope. It is vital that these coils be close to the envelope since the field degenerates with the square of the distance from the discharge area. These coils are arranged to produce a field uniform to 0.1% over 6" sphere.
  • the cathode 7 of this two-electrode glow discharge apparatus is planar and made of the material to be transported, i.e., deposit material. However, it may, optionally, be merely overlaid with a sheet of the depository material, the basic configuration of the cathode being kept standard.
  • the flat, planar substrate 90 is affixed upon the face of planar anode 10.
  • Anode 10 is, of course, adjustable in the cathode-anode axial direction so as to allow a change of location of the substrate mounted thereon.
  • the only limitation as to joining substrate 99 to anode 10 is that the connection should provide good thermal conduction.
  • Anode 10 may be of any conductive, heat resistant metal, such as aluminum.
  • For magnetic film sputtering the anode 10 must be nonmagnetic.
  • Both cathode and anode are water-cooled so that their temperatures can be maintained as low as room temperature if desired. Cooling units are provided in jacket form within the base 6 of the cathode 7 and also within the anode 10.
  • any suitable coolant such as water may be pumped in at cathode inlet 4, emerging at outlet 5 to be cooled and recirculated.
  • inlet 11 and outlet 12 provide the coolant for the anode 10.
  • the cathode-anode potential drop can be varied between -500 ev. using a kv.-5OO ma. low impedance filtered DC power supply. Desired glow discharge effects occur conventionally in the pressure range of to l() mm. Hg. But, in order to maintain a glow discharge in lower pressure regions, where the mean-freepath of electrons is large, the ionization efiiciency has to be increased in several ways.
  • One Way is by superimposing a suitable field on the discharge and thereby increasing the effective path of the colliding electrons and hence increasing the probable number of bombarding particles generated by these collisions.
  • the invention prescribes a novel such field for cylindrical electrodes as taught below, thereby allowing practical sputtering to as low as 10* torr.
  • A'difiusion pump (not shown) is used to pump down to glow dis-charge pressures and thereafter maintain constant pressure while clean gas is being fed in at port 15. Ion current density is very sensitive to small pressure fluctuations; therefore, the flow rate of inert gas through the system must be closely regulated.
  • the glOW discharge zones may be contained in this configuration -(FIG. 1) by the use of both an external, longitudinal magnetic field means (not shown) and of appropriately charged and shaped shielding means.
  • a shielding means 8 is is shown in FIG. 1 surrounding cathode 7.
  • shield 8 When placed around planar cathode 7, shield 8 facilitates discharge normally from the cathode face, toward the anode 10.
  • the anode 10, whose configuration is not critical, can be placed at varying distances from the cathode within the range, for instance, of 414 cm. but beyond the shadow zone. It should be close as possible to cathode 7 for efiiciency.
  • the cathode cross-sectional area should be at least as large as the substrate to assure maximum efiiciency, as substrate 90 shows.
  • Pa'rticular electrode areas as related to sputtering efiiciency, are recited below.
  • the common glow discharge characteristics e.g., current, pressure, voltage and geometry
  • Such laws are explained, for instance, in the Encyclopedia of Physics, edited by E. Flugge (Springer-Verlag, Berlin, Germany, 1956, vol. 22). These zones and parameters reflecting this are schematically plotted in FIG. 2.
  • the prior art planar electrode sputtering case (e.g. FIG. 1 device) provides a starting point for understanding glow discharge or sputtering phenomena.
  • FIG. 2 schematically shows the variation of glow discharge characteristics along the length of the cathodeanode discharge for a typical planar glowdischarge such as in FIG. 1.
  • a glow discharge in these configurations will take place only in a pressure range of between 1 and 200 microns Hg, though lower pressures are possible in the presence of magnetic fields.
  • the glow discharge is maintained by electrons produced at the cathode as a result of positive ion bombardment, which electrons, in turn, will be driven toward the anode, thereby producing more positive ions to bombard the cathode, eroding particles therefrom. These particles then dilfuse toward the substrate and deposit thereon.
  • a reduction in pressure causes the cathode dark space to expand at the expense of the Positive Column because electrons must new travel farther (mean-free-path is greater) to produce elficient ionization.
  • This phenomenon shows that the ionization processes in the cathode dark space are essential for maintenance of the discharge.
  • the Positive Column merely fulfills the function of a conducting path between the anode and Negative Glow region. For the discharge to be maintained, an electron must, in its passage through the gas, produce that number of positive ions which, on striking the cathode, will release a new electron. If this self-sustaining condition is not met, the cathode dark space will expand until it contacts the anode-electrode, at which point the discharge will be extinguished.
  • this planar configuration uses only an abnormal truncate type of glow discharge.
  • truncate-d because the Positive Column and Faraday Dark Space regions of FIG. 7 are eliminated and all the discharge sustaining activity occurs in the Negative Glow and Crookes Dark Space regions.
  • it is called abnormal because the discharge is confined to the voltage dependent, high current region on the voltage-ion current curve.
  • the thickness profile on a substrate will depend on a control of the transport mechanism of sputtered particles from the source (cathode) to the substrate.
  • HCD hollow cathode discharge
  • a glow discharge is modified to exhibit Negative Glow illumination, so as to act as a lamp.
  • Negative Glow lighting results when a plurality of opposed glow discharge cathodes are made to create discharge zones having overlapping Negative Glow regions. Illumination derives from the production of protons at this overlap region.
  • particle excitation e.g., argon particles
  • hp photon quanta of energy
  • FIG. 7 Such an HCD lamp is shown in FIG. 7 wherein the cathode 101 may be observed to comprise opposed cathode surfaces, here in a continuous cylindrical form.
  • opposed HCD regions will appear and produce the required overlapping Negative Glow region, schematically indicated at 105.
  • the invention teaches a new mode of sputtering in a cylindrical cathode at higher pressures (10 torr and up) by invoking a sputter discharge having overlapping Negative Glow regions.
  • a sputter-lamp 10 we may turn to the magnetic field embodiment 200 in FIG. 8 and readily perceive its distinctions and additional advantages, especially at lower pressures where the lamp mechanism disappears (10 torr or less).
  • glow discharge conditions will be invoked (low pressure, high voltages, etc.) as is known in the art between anode 2G3 and cathode 201.
  • a transverse magnetic field means such as coil 298, is also provided according to the invention to modify the discharge by superposing a uniform magnetic field transverse to it. This causes, among other things, a double-spiralling of ionizing electrons, radically lengthening their effective cathode-to-anode path (longer transmit time-cf.
  • Ionization efiiciency increases also are achieved and derive from a conservation of electron energy. This results from the field-induced spiral recirculation of electrons (e.g. 209) through the ionization regions again and again (cf. FIG. 5) for likely multiple ionizing-collisions.
  • the erosion increases also follow from the reduced likelihood of bombarding ions (e.g. 211) inelastically recolliding with other particles in the space charge and being prevented froin eroding the cathode since the cloud no longer intercepts their bombarding path.
  • the intensity of the magnetic field must be maintained high enough to induce the double, or reentrant, spiralling of the electron (e.g., 209' in the indicated path in FIG. 8). As shown, this path spirals about 7 anode 203 as well as about itself. A field of about 700 gauss has been found satisfactory for this, in practice. The spiralling inward, toward the anode 203, results mostly from the loss in kinetic energy resulting from collisions (indicated as X).
  • a second constraint upon the magnetic field trength is that it must be high enough, at the operating pressure, to keep discharge regions compressed sufficiently so that, in expanding with decreasing pressure, they do not extinguish the discharge.
  • This expansion is a function, inversely, of operating pressure; hence, the lower the pressure, the greater the field strength must be.
  • l l 0- torr pressure for instance, about 700 gauss has been found adequate, using devices like that in FIG. 4.
  • the provision of a magnetic field upon a sputtering discharge in a cylindrical cathode according to the invention both increases electron paths and attenuates discharge zones.
  • the vessel chamber takes the form of the cylindrical cathode 4 itself.
  • This is a radical improvement over all forms of prior art sputtering devices, since it simplifies structure, saves parts and spaceand allows the cathode to be conveniently cooled with external means, for instance by coils th, in thermal-transfer relation With cathode 40.
  • Coils Sit are filled with a conventional coolant, such as water or liquid nitrogen, and operate to cool the ion-bombarded cathode so as to maintain it thermally stable.
  • any alternative cooling means may be used.
  • Substrate 47 which is the article to be coated, is positioned within the chamber formed by cylindrical cathode 4i) and, when sputtering conditions are invoked, will be sputter-coated with the material eroded from cathode sleeve 41 within cathode 40.
  • the sputtering glow discharge condition is applied between substrate 47, which is ohmically connected to the positively charged anode 4-2 and the inner surface of sleeve 41, of course, alternatively, the surface of the cathode ib may be directly eroded by removing sleeve 41, which is only provided for convenience and versatility.
  • the sputtering glow discharge condition is applied between substrate 47, which is ohmically connected to the positively charged anode 4-2 and the inner surface of sleeve 41, of course, alternatively, the surface of the cathode ib may be directly eroded by removing sleeve 41, which is only provided for convenience and versatility.
  • eroded material efiectively fills the discharge chamber with a gas having the same composition of sleeve 41 (even if it is a multicomponent alloy).
  • This gas diffusively emanates toward, and deposits itself upon, the surface of substrate 47 in a uniform, carefully controlled manner.
  • depository material can be made to uniformly and more efficiently deposit itself over the surface of any shape substrate. This is because the cylindrical cathode of the invention produces omnidirectional deposition, as opposed to the unidirectional mode in planar cathode devices.
  • a charged prism may be placed within the cylinder in place of substrate 47 and anode 42; and be sputter-coated uniformly without significant dependence upon its shape or position. Uniformity will be optimized if it i rotated as well. This is a radical and significant difference over prior art glow discharge devices which are extremely position-dependent, and the shape of Whose substrates is necessarily quite fixed.
  • sleeve 41 of depository material may comprise any suitable material to be deposited on the substrate 47, as long as it is ohmically and thermally connected to cathode 40. This allows a convenient change in deposition source-material.
  • the source-material might comprise the cathode cylinder itself, although it would be preferable not to erode this, keeping it unerodcd to serve as a container wall.
  • substrate 47 might alternatively comprise the anode 4-2 itself which may be introduced axially of the cathode wall through chamber
  • anode 42 might comprise a slide-holder of any convenient shape, for instance, a prism.
  • Such a prism might be provided with slide-engaging insets to engagingly mount the lides while in the discharge chamber or such equivalents as will occur to workers in the art. Cooling is performed conventionally within the structure of anode 42 by introducing a coolant, for instance, through conduit 46, the heating of which will cause it to exit through outer conduit 48. However, any convenient coolant system evident to those skilled in the art may be substituted for this. It will be apparent that auxiliary chamber 7t? in conjunction with its removable top 71 provides an access port through which the anode substrate configurations may be axially inserted, allowing for instance for the substrate 4-? to be introduced quickly and easily into the chamber and thereafter removed.
  • auxiliary chamber 7% It may be noted in connection with auxiliary chamber 7%) that it is sealably but insulatedly connected, for instance, by Tefion insulation 5s, to the end plates 58, 58 of the main chamber.
  • End plates 58, 58' are provided as the axial closures of the container formed by cylindrical cathode 40. These end plates are made of a metallic material, preferably the same material as cathode at) so as to extend the effective cathode surface electrically, preventing undesirable sharp field gradients at the cylinder edges. Sheets of 6% of dielectric material overlie the outer surfaces of end plates 58, 58 entirely, except for gaps (of a few mm.) adjacent sleeve 41. This obstructs the discharge at the end plates, thereby preventing erosion thereof and still avoids a metal-to-dielectric vacuum seal by allowing use of metal closures 58, S8.
  • Valves 5'7, 57 are provided in the entry ports 54 and 55 for controlling the amount of inert gas admitted to the sputtering chamber.
  • Such valves are preferably provided with controls to enable them to act as a variableleak gas input so that input gas may be continually admitted in minute amounts to flow into the discharge space and thereby cool the substrate 4'7 during the cathode sputtering period.
  • an auxiliary cooling means can provide the same advantages as the anode cooling means 45, etc.
  • Control of the substrate temperature is, of course, important because it affects both the physical properties and chemical composition of the sputtered film deposited thereon. This temperature becomes especially critical when oxidizable materials are sputtered or when the sputtered film is to be magnetically oriented during deposition.
  • the invention is seen to provide a new electrode configuration leading to novel discharge characteristics, and includes a cylindrical cathodewall, removable electrodes, auxiliary discharge chamber and equipotential but nonsputtering end plates for improved sputtering.
  • the invention also provides a novel field arrangement. It will be observed that a magnetic field-producing coil Si) is provided in FIG. 4 surrounding the sputtering chamber. Coil 80 may be substituted for by any equivalent means for generally providing an axially transverse magnetic field, directed axially of the chamber formed by cathode 49 and radially symmetric therealong, according to the invention.
  • This novel field means coacts with the cylindrical electrode arrangement of the invention and is a new and unobvious improvement over prior sputtering apparatus, yielding an increase in sputtering efiiciencies on the order of to 100 times, depending upon the sputtering conditions.
  • FIG. 5 generally shows a crosssection through the sputtering device shown in FIG. 4, illustrating the relation of the cathode 40, the anodesubstrate combination 47, the Crookes Dark Space (CD5), and schematically, a typical electron path EP from cathode-to-anode.
  • the other result is to induce the helical re-entrant spiralling path EP of the electron as it proceeds to the substrate-anode 47'.
  • an alternative magnetic field configuration is prescribed according to the invention; namely, an axially-balanced or quadrupole magnetic field such as that shown in FIG. 6.
  • the cylindrical cathode discharge configuration is essentially similar to that in FIGS. 4 and 5, the discharge taking place between cylindrical cathode 93 and centrally-clisposed substrate-anode 97, kept for instance at a potential of about -
  • anode 97 may be any commonly shaped object as long as it is somewhat parallel to cathode 93 and fits within the discharge area.
  • the potential of the cathode 93 is essentially at ground, as before.
  • the change here is in the provision of four magnetic field generating coils 92, 2, 94 and 94 which, as the positive and negative signs and the field lines indicate, are arranged in alternating polarity of field opposing relation.
  • Such an array generates quadrupole magnetic fields which, as the flux lines schematically indicate, are transverse and radially symmetrical as in the case of the unidirectional, single coil field, but unlike it are also bidirectional and axially symmetrical and thus effect balanced or bucking magnetic fields.
  • the efiect of such a quadrupole or balanced magnetic field is to eliminate the edge efiects.
  • Such a field adjustment is made by adjusting the current flow in the coils appropriately to achieve a field similar to that schematically shown in the diagram.
  • the object is to compensatorily reduce the amount of ionization at these edges to a degree proportional to the higher sputtering rate there.
  • the inventive sputtering arrangement has been found practical and advantageous for depositing thin, high-grade magnetic films.
  • Such films can be prepared with a cylin drical cathode discharge according to the invention, taking advantage of the ability to grow high purity films in a very high vacuum. If very high rates of deposition are required, this can be enabled by using the transverse magnetic field at higher pressures.
  • Large orienting fields can now be used without distorting the discharge if they are supplemented with the balanced magnetic field along the discharge.
  • the invention may also be advantageously employed to deposit superconductor films, for example such hard superconductors as Nb-Zr, Nb sn, V 621, etc. It has already been established in the literature that it would be highly desirable to obtain these hard superconductors in thin film form because, among other reasons, their current-carrying capacity in the presence of the inevitable magnetic field is greater in this form than in bulk form. It is also thought that the thin film version of these materials is an essential requirement for their ability to become superconducting along filaments in the structure. These films naturally lend to the production of materials which must have a high density of structural defects (inhomogeneities). Workers in the art will prefer to sputter such superconductor thin films for the following reasons:
  • cylindrical cathode device should lend itself particularly well for these films because it provides:
  • the substrate one chooses must not go superconducting itself, but act as a normal conductor at low temperatures.
  • By coating superconductor wires by the inventive cylindrical cathode method one may manipulate (e.g., wind) them easily without worrying about the brittleness of the film. Needless to say, this applies for any filaments coated according to the invention.
  • the articles can move continuously from outside the vacuum chamber to inside the chamber through a means that will stop any air fiow into the chamber and be removed from the chamber in like fashion, for example a drop in pressure in stages.
  • periodic dispensing means may be provided to insert the object, invoke sputtering and then remove the obiect all automatically.
  • the class of materials wherein the novel sputtering method and apparatus of this invention is superior to other deposition techniques includes alloys, metals having low vapor pressures, and expensive materials.
  • the transport of alloys is impossible using vacuum evaporation techniques, except where the vapor pressures of the alloyed materials are very close together; whereas sputtering works independent of vapor pressures.
  • Metals that are refractory or hard to evaporate, such as platinum, iridium, tantalum, tungsten, zirconium, and molybdenum, are difiicult subjects for vacuum evaporation, but no problem for the sputtering deposition.
  • Materials which are expensive, such as gold or palladium, can now be deposited by means of the present invention without the expensive waste of material characteristic of vacuum coating.
  • the invention provides an improved method and apparatus for depositing films by sputtering.
  • the invention teaches how a wide variety of coating materials can be deposited with greater uniformity as to both thickness and composition. It teaches how articles may be sputtered uniformly despite an irregular surface conformation. Further, the method and apparatus provide greatly increased sputtering rates, allowing practical sputtering at much lower pressures.
  • the invention makes such efficient use of the cathodic source material that it is less expensive to sputter costly materials. Further, the improved eificiency and economy of the invention make the adap- 13 tion of sputtering for continuous, mass production techniques now more feasible.
  • Apparatus of the hollow cathode an article by sputtering comprising:
  • a hollow cathode-electrode said electrode comprising a metallic shell element having an inner cylindrical surface and an outer surface, said inner surface having a smooth surface layer of depository material to be eroded;
  • an anode-electrode arranged to be surrounded and at least partially enclosed by said inner surface so that a glow discharge may be invoked between said anode and said inner surface;
  • potential source means for impressing a suitable volt age between said anode and said cathode to thereby obtain abnormal glow discharge conditions within said cathode
  • magnetic field means arranged to superpose a cylindrical quadrupole magnetic field to said discharge.
  • said magnetic field superposed upon said discharge by type for coating said magnetic field means has a major component parallel to said axis and transverse to said discharge, said field being generally radially symmetric about said axis and of sufiicient intensity to induce electron spiralling within said discharge and yet maintain said discharge.
  • the apparatus of claim 3 including additional means for disposing said article along said axis to thereby obtain uniform deposition thereon.
  • sealing means comprises end covers for enclosing and sealing said cathode, said end covers being electrically insulated from said cathode to avoid sputtering thereof.
  • said pressure is at a value no lower than that required to maintain said discharge at the prevailing conditions.

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US574216A 1963-09-16 1966-08-22 Cylindrical cathode sputtering apparatus including means for establishing a quadrupole magnetic field transverse of the discharge Expired - Lifetime US3354074A (en)

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Application Number Priority Date Filing Date Title
GB1054660D GB1054660A (enrdf_load_stackoverflow) 1963-09-16
DE19641515301 DE1515301A1 (de) 1963-09-16 1964-09-12 Verfahren zur Aufbringung hochwertiger duenner Schichten mittels Kathodenzerstaeubung und Vorrichtung zur Durchfuehrung des Verfahrens
FR988154A FR1417190A (fr) 1963-09-16 1964-09-15 Appareil de projection symétrique
US574216A US3354074A (en) 1963-09-16 1966-08-22 Cylindrical cathode sputtering apparatus including means for establishing a quadrupole magnetic field transverse of the discharge
US574868A US3341442A (en) 1963-09-16 1966-08-22 Method of cathode sputtering including cleaning by ion bombardment wherein an article to be coated is subjected to canal rays

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US309159A US3282816A (en) 1963-09-16 1963-09-16 Process of cathode sputtering from a cylindrical cathode
US574216A US3354074A (en) 1963-09-16 1966-08-22 Cylindrical cathode sputtering apparatus including means for establishing a quadrupole magnetic field transverse of the discharge
US574868A US3341442A (en) 1963-09-16 1966-08-22 Method of cathode sputtering including cleaning by ion bombardment wherein an article to be coated is subjected to canal rays

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4090941A (en) * 1977-03-18 1978-05-23 United Technologies Corporation Cathode sputtering apparatus
US4132613A (en) * 1974-12-23 1979-01-02 Telic Corporation Glow discharge method and apparatus
US4179351A (en) * 1976-09-09 1979-12-18 Hewlett-Packard Company Cylindrical magnetron sputtering source
US4221652A (en) * 1975-04-10 1980-09-09 Kabushiki Kaisha Tokuda Seisakusho Sputtering device
US4252626A (en) * 1980-03-10 1981-02-24 United Technologies Corporation Cathode sputtering with multiple targets
US5069770A (en) * 1990-07-23 1991-12-03 Eastman Kodak Company Sputtering process employing an enclosed sputtering target
US20030059640A1 (en) * 1999-11-19 2003-03-27 Denes Marton High strength vacuum deposited nitinol alloy films and method of making same
EP1561836A1 (de) * 2004-02-05 2005-08-10 Zentrum Für Material- und Umwelttechnik Gmbh Verfahren zum Herstellen einer Targetanordnung
CN106884150A (zh) * 2017-04-24 2017-06-23 大连爱瑞德纳米科技有限公司 一种悬浮阳极及带有悬浮阳极的磁控溅射装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3548189A (en) * 1965-06-16 1970-12-15 Aden B Meinel Method employing ion beams for polishing and figuring refractory dielectrics
US3404084A (en) * 1965-10-20 1968-10-01 Gen Precision Systems Inc Apparatus for depositing ionized electron beam evaporated material on a negatively biased substrate
US3410774A (en) * 1965-10-23 1968-11-12 Ibm Method and apparatus for reverse sputtering selected electrically exposed areas of a cathodically biased workpiece
US3544445A (en) * 1966-09-01 1970-12-01 Bendix Corp Floating shield in a triode sputtering apparatus protecting the base from the discharge
US3925182A (en) * 1973-09-25 1975-12-09 Shatterproof Glass Corp Method for continuous production of sputter-coated glass products
US4126530A (en) * 1977-08-04 1978-11-21 Telic Corporation Method and apparatus for sputter cleaning and bias sputtering
DE102006020004B4 (de) * 2006-04-26 2011-06-01 Systec System- Und Anlagentechnik Gmbh & Co.Kg Vorrichtung und Verfahren zur homogenen PVD-Beschichtung
CN111074208B (zh) * 2019-12-19 2021-04-06 中国科学院高能物理研究所 一种纯铌腔内表面镀铌三锡薄膜的方法及真空炉

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2146025A (en) * 1935-12-28 1939-02-07 Philips Nv Coating by cathode disintegration
US2256771A (en) * 1937-08-15 1941-09-23 Berghaus Method of coating articles by cathode disintegration
US3250694A (en) * 1962-10-17 1966-05-10 Ibm Apparatus for coating articles by cathode sputtering
US3282814A (en) * 1961-12-13 1966-11-01 Berghaus Elektrophysik Anst Method and device for carrying out gas discharge processes

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2189580A (en) * 1937-05-29 1940-02-06 Gen Electric Method of making a photoelectric cell
US3087838A (en) * 1955-10-05 1963-04-30 Hupp Corp Methods of photoelectric cell manufacture
GB830391A (en) * 1955-10-28 1960-03-16 Edwards High Vacuum Ltd Improvements in or relating to cathodic sputtering of metal and dielectric films
US2897129A (en) * 1957-03-04 1959-07-28 Titanium Metals Corp Electrode handling and storing apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2146025A (en) * 1935-12-28 1939-02-07 Philips Nv Coating by cathode disintegration
US2256771A (en) * 1937-08-15 1941-09-23 Berghaus Method of coating articles by cathode disintegration
US3282814A (en) * 1961-12-13 1966-11-01 Berghaus Elektrophysik Anst Method and device for carrying out gas discharge processes
US3250694A (en) * 1962-10-17 1966-05-10 Ibm Apparatus for coating articles by cathode sputtering

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4132613A (en) * 1974-12-23 1979-01-02 Telic Corporation Glow discharge method and apparatus
US4221652A (en) * 1975-04-10 1980-09-09 Kabushiki Kaisha Tokuda Seisakusho Sputtering device
US4179351A (en) * 1976-09-09 1979-12-18 Hewlett-Packard Company Cylindrical magnetron sputtering source
US4090941A (en) * 1977-03-18 1978-05-23 United Technologies Corporation Cathode sputtering apparatus
US4252626A (en) * 1980-03-10 1981-02-24 United Technologies Corporation Cathode sputtering with multiple targets
US5069770A (en) * 1990-07-23 1991-12-03 Eastman Kodak Company Sputtering process employing an enclosed sputtering target
US20030059640A1 (en) * 1999-11-19 2003-03-27 Denes Marton High strength vacuum deposited nitinol alloy films and method of making same
US7335426B2 (en) 1999-11-19 2008-02-26 Advanced Bio Prosthetic Surfaces, Ltd. High strength vacuum deposited nitinol alloy films and method of making same
US20080171214A1 (en) * 1999-11-19 2008-07-17 Advanced Bio Prosthetic Surfaces, Ltd. High strength vacuum deposited nitinol alloy films and method of making same
US7670690B2 (en) 1999-11-19 2010-03-02 Advanced Bio Prosthetic Surfaces, Ltd. High strength vacuum deposited nitinol alloy films and method of making same
US8083908B2 (en) 1999-11-19 2011-12-27 Advanced Bio Prosthetic Surfaces, Ltd. High strength vacuum deposited nitinol alloy films and method of making same
EP1561836A1 (de) * 2004-02-05 2005-08-10 Zentrum Für Material- und Umwelttechnik Gmbh Verfahren zum Herstellen einer Targetanordnung
CN106884150A (zh) * 2017-04-24 2017-06-23 大连爱瑞德纳米科技有限公司 一种悬浮阳极及带有悬浮阳极的磁控溅射装置

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DE1515301A1 (de) 1969-06-19
US3341442A (en) 1967-09-12

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