US3293950A - Wire drawing die - Google Patents

Wire drawing die Download PDF

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Publication number
US3293950A
US3293950A US425875A US42587565A US3293950A US 3293950 A US3293950 A US 3293950A US 425875 A US425875 A US 425875A US 42587565 A US42587565 A US 42587565A US 3293950 A US3293950 A US 3293950A
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US
United States
Prior art keywords
silicon carbide
dies
die
substrate
wire drawing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US425875A
Other languages
English (en)
Inventor
Edward L Kern
Dennis W Hamill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Priority to US425875A priority Critical patent/US3293950A/en
Priority to GB49702/65A priority patent/GB1100407A/en
Priority to SE73/66A priority patent/SE305172B/xx
Priority to NL6600426A priority patent/NL6600426A/xx
Priority to FR45919A priority patent/FR1464359A/fr
Application granted granted Critical
Publication of US3293950A publication Critical patent/US3293950A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES, PROFILES OR LIKE SEMI-MANUFACTURED PRODUCTS OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C3/00—Profiling tools for metal drawing; Combinations of dies and mandrels for metal drawing
    • B21C3/18—Making tools by operations not covered by a single other subclass; Repairing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
    • B23P15/24—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass dies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Definitions

  • Kern Den/1 is W.
  • the present invention relates to wire drawing dies and more particularly to improved wire drawing dies and methods of making such devices.
  • Wire drawing dies must be formed of extremely hard materials in order to resist Wearing in the wire drawing process. If the die exhibits wear the dimension of the wire drawn through the die is changed. Thus, for dimensional control in the production of wire it has been common practice in the field to provide dies made of silicon carbide crystals or pressed silicon carbide, and for finishing, of diamond.
  • the silicon carbide crystals are generally randomly grown in carbide furnaces. A crystal near the desired size is chosen and cut and ground to the desired die configuration. Diamond must also be cut and finished in a like manner. In other dies, formed and pressed silicon carbide is used to line the die. Since these materials are extremely hard, the cutting and finishing steps are difiicult and expensive.
  • the present invention has for an object the provision of a wire drawing die which is superior to those of the prior art.
  • a further object is to provide a method for producing a quality die which is cheaper than those methods used in prior art systems.
  • the present invention a method of pyrolytically growing silicon carbide in the general shape of the required die, by decomposing alkylsilanes, and then performing final machining on the deposited material. It has been found that dies so formed have advantages over prior art silicon carbide dies in hardness and mi formity and exhibit many economies over both prior art silicon carbide and diamond dies in the manufacturing process.
  • FIG. 1 is a view in perspective of a rod formed of silicon carbide in accordance with the present invention prior to cutting, removal of the substrate, further deposition, and machining;
  • FIG. 2 is a view in perspective of the rod of FIG. 1 after removal of the substrate and illustrating longitudinal sectioning for further deposition of silicon carbide;
  • FIG. 3 is a somewhat diagrammatic view in partial cross-section illustrating the method of silicon carbide deposition
  • FIG. -4 is a view in perspective of a solid silicon carbide rod before cutting and machining
  • FIG. 5 is a finished wire drawing die made in accordance with the present invention.
  • FIG. 6 is a view in cross section illustrating an alternate method of making dies in accordance with the present invention.
  • FIG. 1 a tube 11 of silicon carbide deposited on a rod 12 of substrate material such as silicon.
  • the silicon carbide is formed by reducing certain alkylsilanes with hydrogen at temperatures between about 1150 and 125 C. This has been accomplished in a reaction chamber using a total hydrogen flow up to 10 liters per minute made up of ratio "of a 20 to l-to-l to 1 H to dimethyldichlorosilane ratio.
  • Other silanes such as trimethylmonochlorosilane, propyltrichlorosilane, and various mixtures including monomethyl and dimethyltrichlorosilanes may also be used.
  • the ratio of starting carbon to starting silicon in the silanes must be at least 1.75 to 1. While a silicon rod has been found useful as a substrate, rods or tubes of other substrate materials capable of withstanding the temperatures involved, and capable of being easily removed from the deposited silicon carbide may also be used.
  • the silicon carbide which was produced by this process has been found to have a Knoop g.) hardness value of 2960:30 kg./mm.
  • the composite rod is removed from the reactor and a plurality of longitudinal cuts 13 (FIG. 2) are made to section the rod into pie shaped sectors.
  • the substrate is removed by etching, sand blasting or any other suitable process leaving a plurality of truncated trapezoidal sectors 11a, 11b, 110, etc.
  • the corners of these sectors are preferably then rounded by grinding and three of the .sectors are then formed into the two legs and the cross bridge of a reactor 14, as shown in FIG. 3, for further deposition.
  • the legs 11b and lie are connected to an electrical power source 15, and form a resistance heating element.
  • Alkylsilane, as set forth hereinabove, and hydrogen are again flowed into the system through a nozzle 16 under the conditions heretofore enumerated.
  • an exhaust duct 21 is provided to remove gases from the reactor.
  • the silane is again decomposed into silicon carbide which is deposited on the sectors 11a, 11b, and 110, thereby forming solid silicon carbide rods or cylinders.
  • the rods have reached sufiicient diameter for machining of the desired dies as shown by the numeral 17 in FIG. 4, they are removed from the reactor and machined by means such as diamond grinding tools on a lathe or by electron discharge machining.
  • the rod is cut to the length desired for the dies and the inside portions are also machined to the desired final configuration such as that shown in FIG. 5.
  • a substrate which is easily preworked such as tantalum tubing
  • a tubular substrate such as tantalum tube 18 is shaped on its outer surface to the desired configuration of a plurality of dies. Due to the ductile nature of tantalum and modern methods of forming tubing, this is easily accomplished.
  • the tubing is resistance heated in the reactor and a silicon carbide layer 19 is deposited as hereinbefore described. In this method the deposition process is continued until the approximate size of the finished die has been reached.
  • the composite tube is then cut at sec- 3 tions A -A B B and C -C to provide finished die lengths.
  • the tantalum is easily removed from the silicon carbide by use of HFHNO leaving only final polishing and possible small amounts of machining necessary to complete the die.
  • Suitable materials, other than silicon and tantalum include carbon, tungsten and various alloys.
  • the Si-C can be doped to a resistivity as low as .05 ohmcms. using nitrogen, boron, phosphorous or other suitable dopants from doping sources such as N BCl PCl and others.
  • the dopant is flowed into the reactor during decomposition, thereby providing uniform dopant distribution and a resultant simplifying of the machining process by using electron discharge machining.
  • the silicon carbide die made in accordance with the aforedescribed process and variations thereof are of harder material than silicon carbide dies formed by prior art processes, with the possible exception of some naturally grown crystals grown in silicon carbide furnaces. In comparison with these, however, dies made by the present process have the advantage of economy, as well as symmetry to provide even wear characteristics. It is also possible to produce larger dies than could be heretofore produced from natural crystals. A further advantage, particularly when a preformed substrate is used, is the lack of the extensive machining necessary to form natural crystals into dies. It is also possible with the present invention to dope the material to optimum resistivity for electron discharge machining, thereby simplifying the machining which is necessary with this invention.
  • a process for making dies comprising the steps of depositing from the vapor phase a layer of silicon carbide on a substrate,

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Metal Extraction Processes (AREA)
US425875A 1965-01-15 1965-01-15 Wire drawing die Expired - Lifetime US3293950A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US425875A US3293950A (en) 1965-01-15 1965-01-15 Wire drawing die
GB49702/65A GB1100407A (en) 1965-01-15 1965-11-23 Silicon carbon dies
SE73/66A SE305172B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1965-01-15 1966-01-03
NL6600426A NL6600426A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1965-01-15 1966-01-13
FR45919A FR1464359A (fr) 1965-01-15 1966-01-14 Procédé de fabrication de filières pour l'étirage de fils métalliques

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US425875A US3293950A (en) 1965-01-15 1965-01-15 Wire drawing die

Publications (1)

Publication Number Publication Date
US3293950A true US3293950A (en) 1966-12-27

Family

ID=23688401

Family Applications (1)

Application Number Title Priority Date Filing Date
US425875A Expired - Lifetime US3293950A (en) 1965-01-15 1965-01-15 Wire drawing die

Country Status (5)

Country Link
US (1) US3293950A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR1464359A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1100407A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL6600426A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE305172B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3828628A (en) * 1970-11-24 1974-08-13 Peugeot & Renault Methods of extruding helical gear blanks
US4411175A (en) * 1979-10-18 1983-10-25 Bridgestone Tire Co., Ltd. Method for making a ring-shaped mold
US20070251455A1 (en) * 2006-04-28 2007-11-01 Gt Equipment Technologies, Inc. Increased polysilicon deposition in a CVD reactor
US20110129621A1 (en) * 2008-03-26 2011-06-02 Gt Solar, Incorporated Systems and methods for distributing gas in a chemical vapor deposition reactor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE48798B1 (en) * 1978-08-18 1985-05-15 De Beers Ind Diamond Method of making tool inserts,wire-drawing die blank and drill bit comprising such inserts
EP0665305A4 (en) * 1993-08-17 1996-01-10 Aktsionernoe Obschestvo Russko METHOD FOR PRODUCING LAYERS FROM SI CARBIDE AND PRODUCT PRODUCED THEREOF.

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3828628A (en) * 1970-11-24 1974-08-13 Peugeot & Renault Methods of extruding helical gear blanks
US4411175A (en) * 1979-10-18 1983-10-25 Bridgestone Tire Co., Ltd. Method for making a ring-shaped mold
US20070251455A1 (en) * 2006-04-28 2007-11-01 Gt Equipment Technologies, Inc. Increased polysilicon deposition in a CVD reactor
WO2007127657A3 (en) * 2006-04-28 2008-11-20 Gt Solar Inc Increased polysilicon deposition in a cvd reactor
RU2442844C2 (ru) * 2006-04-28 2012-02-20 ДжиТиЭйТи Корпорейшн Повышение производительности осаждения поликремния в реакторе химического осаждения из паровой фазы
CN101432460B (zh) * 2006-04-28 2013-07-31 Gtat公司 在化学气相沉积反应器中提高的多晶硅沉积
US8647432B2 (en) 2006-04-28 2014-02-11 Gtat Corporation Method of making large surface area filaments for the production of polysilicon in a CVD reactor
US9683286B2 (en) 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
US20110129621A1 (en) * 2008-03-26 2011-06-02 Gt Solar, Incorporated Systems and methods for distributing gas in a chemical vapor deposition reactor
US8961689B2 (en) * 2008-03-26 2015-02-24 Gtat Corporation Systems and methods for distributing gas in a chemical vapor deposition reactor

Also Published As

Publication number Publication date
FR1464359A (fr) 1966-12-30
NL6600426A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1966-07-18
SE305172B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1968-10-14
GB1100407A (en) 1968-01-24

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