US3157472A - Drawing semiconductor crystals - Google Patents

Drawing semiconductor crystals Download PDF

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Publication number
US3157472A
US3157472A US53648A US5364860A US3157472A US 3157472 A US3157472 A US 3157472A US 53648 A US53648 A US 53648A US 5364860 A US5364860 A US 5364860A US 3157472 A US3157472 A US 3157472A
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US
United States
Prior art keywords
strand
seed crystal
rodlike
semiconductor
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US53648A
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English (en)
Inventor
Kappelmeyer Rudolf
Quast Hans-Friedrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
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Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of US3157472A publication Critical patent/US3157472A/en
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Definitions

  • the desired semiconductor is obtained from a gas phase, that is, by thermal decomposition of a highly pure gaseous compound of the corresponding semiconductor, if desired intermixed with highly pure hydrogen, which is caused to crystallize upon a thin rodlike carrier made of the same semiconductor material.
  • This method accordingly requires the use of thin rodlike semiconductor crystals as initial carriers.
  • different modes of producing thin rodlike semiconductor crystals are also of interest.
  • Another important method of producing thin semiconductor crystal rods is the known Czocharlsky method wherein a mono crystal is dipped into a melt and gradually withdrawn therefrom, carrying a strand of molten material along, such strand solidifying successively and forming a rodlike body with a cross-section depending upon the drawing speed.
  • the melt may be contained in a Crucible.
  • the semiconductor material required for the formation of a thin rod can be taken from a molten zone produced, for example, at the end of a sufficiently thick preferably vertically extending rodlike body made of the corresponding pure semiconductor material, whereby the thick semiconductor rod is successively advanced in the direction of the molten zone so as to replenish the melt from which the material is taken by the seed crystal.
  • rhe operation is effected in vacuum or if desired in a hydrogen or argon atmosphere.
  • the diameter of the fluid material carried along with the seed crystal depends upon the speed at which the seed crystal is withdrawn from the melt and also upon the initial contact area between the seed crystal and the melt. It is entirely possible to draw crystalline rods with a diameter of 3 millimeters or less, by applying appropriate drawing speeds and employing seed crystals of suitably small dimensions. Diaphragms forming apertures may also be used to aid in the formation of the rod diameter.
  • the object of the invention is to eliminate these troubles and, accordingly, to produce more uniform rods with a diameter from a few millimeters down to substantially about one millimeter.
  • the electric ield In order to obtain at the surface of the drawn fluid material a field as uniform as possible, it is recommended to produce the electric ield by means of a direct voltage applied between the drawn material strand and a ring electrode concentrically surrounding the interface between the fluid and the solidified portions and retaining, during the drawing operation, its position relative to the interface.
  • the eld strength to be applied depends upon the surface tension of the duid semiconductor material of the drawn strand.
  • the component of the electric eld extending perpendicular to the surface of the drawn strand shall amount to at least 5 liv/cm. A lower value will sufiice for other semiconductor materials such, for example, as germanium.V
  • Numeral id indicates an evacuated vessel lled with a protective gas, such vessel being provided with suitable means for supervising the interior parts, for example, a suitable window.
  • the desired thin semiconductor rod 1 is drawn from a melt 2 which is at the upper end of a relatively thick vertically extending rod 3, made of the corresponding semiconductor material, produced by an energy source 4, for example, a high frequency coil supplied from a high frequency source 5.
  • a reflector not shown, may be used to increase the effectiveness of the heating source.
  • a pointed seed crystal 6 made of the desired semiconductor material, the pointed end of which is in known manner dipped into the melt 2 and thereafter gradually upwardly withdrawn therefrom.
  • the diameter of the thin rod l to be drawn will be a function of the drawing speed.
  • the seed crystal is held in a holder 7 which is moved upwardly in the direction of arrow 9, by means of a gear S, thereby moving it with a given speed away from the melt 2. Further portions of the thick semiconductor body 3 must be melted according to the rate at which the melted zone 2 is consumed, and the body 3 which is mounted in a holder 10 is for this purpose moved upwardly in the direction of the arrow 12, by means of a gear 11, thus moving it progressively into the field of action of the heating zone 4.
  • the advance of the body 3 is advantageously effected under control of a suitable automatic coupling (not shown) governed in accordance with the drawing speed of the seed crystal 6.
  • the material strand l which is continuously taken from the melt 2 and which upon solidification forms the thin rod, is at the level 13 of the interface between the uid Y ductor material and ythat these troubles can be avoided in v relatively simple-manner by a reduction of the surfaceV tension effected by an electric -field.
  • This field amounts in case of silicon, considering the surface tension applicable therefor, to atleast 5 kv./crn. Lower values can be applied in ⁇ connection with other semiconductors. The given value applies for the normal component ofthe field strength with respect to the surface of the material strand 1.
  • the apparatus described above for. the drawing of thin rods can be modified in known manner.
  • a molten zone in a crucible can take the place of the molten zone shown.
  • the remaining steps required for the production of the'thin rods correspond in this case to those already described.
  • the strand of the material can be guided through the aperturejof a stationary diaphragm which defines the general dimension of the material strand.
  • the present method may be combined with the known method by utilizing ,the electrode, serving in the known method as a measuring electrode and surrounding the material strand, according to the teaching of the present invention, as a carrier of the Yelectric field which reduces the surface tension of the material strand, thus serving Yfor the dimensioning of the electrostatic field.
  • the method of continuously forming said rodlikecrystal with a substantially uniform diameter comprising surrounding the liquid material strand, which is being carried along by the seed crystal, with an annular .electrode andapplying a direct voltage between the latter and said strand to produce a substantially uniform electrostatic'fieldY concentrically acting upon said strand substantially at the level of the interface between the liquid and solidified portions thereof, the strength and orientation of said electrostatic feid being with respect to the liquid material strand such that the surface tension is reduced to avoid occurrence of periodic constrictions in the solidified material strand.
  • silicon constitutes the material of which the rodlike crystal is to be produced, and wherein the component of the electrostatic field extending perpendicularly to the surface of said material strand amounts at least to 5 liv/cm.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US53648A 1959-09-11 1960-09-02 Drawing semiconductor crystals Expired - Lifetime US3157472A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES64875A DE1278413B (de) 1959-09-11 1959-09-11 Verfahren zum Ziehen duenner stabfoermiger Halbleiterkristalle aus einer Halbleiterschmelze

Publications (1)

Publication Number Publication Date
US3157472A true US3157472A (en) 1964-11-17

Family

ID=7497558

Family Applications (1)

Application Number Title Priority Date Filing Date
US53648A Expired - Lifetime US3157472A (en) 1959-09-11 1960-09-02 Drawing semiconductor crystals

Country Status (6)

Country Link
US (1) US3157472A (fr)
CH (1) CH390554A (fr)
DE (1) DE1278413B (fr)
GB (1) GB900562A (fr)
NL (1) NL255530A (fr)
SE (1) SE301794B (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275419A (en) * 1961-03-09 1966-09-27 Siemens Ag Method and apparatus for producing elongated strip-shaped crystalline semiconductor bodies
US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
US3397042A (en) * 1963-10-15 1968-08-13 Texas Instruments Inc Production of dislocation-free silicon single crystals
US3428436A (en) * 1963-12-16 1969-02-18 Monsanto Co Methods and apparatus for zone melting
US3453352A (en) * 1964-12-14 1969-07-01 Texas Instruments Inc Method and apparatus for producing crystalline semiconductor ribbon

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2842467A (en) * 1954-04-28 1958-07-08 Ibm Method of growing semi-conductors
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275419A (en) * 1961-03-09 1966-09-27 Siemens Ag Method and apparatus for producing elongated strip-shaped crystalline semiconductor bodies
US3397042A (en) * 1963-10-15 1968-08-13 Texas Instruments Inc Production of dislocation-free silicon single crystals
US3428436A (en) * 1963-12-16 1969-02-18 Monsanto Co Methods and apparatus for zone melting
US3453352A (en) * 1964-12-14 1969-07-01 Texas Instruments Inc Method and apparatus for producing crystalline semiconductor ribbon
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
US3293002A (en) * 1965-10-19 1966-12-20 Siemens Ag Process for producing tape-shaped semiconductor bodies

Also Published As

Publication number Publication date
NL255530A (fr)
SE301794B (fr) 1968-06-24
CH390554A (de) 1965-04-15
GB900562A (en) 1962-07-11
DE1278413B (de) 1968-09-26

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