US3090881A - Storage target electrode and method of manufacture - Google Patents

Storage target electrode and method of manufacture Download PDF

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Publication number
US3090881A
US3090881A US30152A US3015260A US3090881A US 3090881 A US3090881 A US 3090881A US 30152 A US30152 A US 30152A US 3015260 A US3015260 A US 3015260A US 3090881 A US3090881 A US 3090881A
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membrane
oxide
approximately
target
magnesium
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US30152A
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English (en)
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Wellinger Roger Paul
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General Electric Co
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General Electric Co
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Priority to NL265016D priority Critical patent/NL265016A/xx
Application filed by General Electric Co filed Critical General Electric Co
Priority to US30152A priority patent/US3090881A/en
Priority to GB17959/61A priority patent/GB915926A/en
Priority to DEG32310A priority patent/DE1234330B/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/41—Charge-storage screens using secondary emission, e.g. for supericonoscope
    • H01J29/413—Charge-storage screens using secondary emission, e.g. for supericonoscope for writing and reading of charge pattern on opposite sides of the target, e.g. for superorthicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/917—Plural dopants of same conductivity type in same region

Definitions

  • My invention relates to an improved storage target electrode of the type for use in producing a point-by-point charge pattern corresponding to a visual image or other infomation to be converted to electrical signals by scanning the target electrode with an electron beam. More particularly, my invention relates to an improved thin-film target electrode and improved methods of manufacturing same.
  • the patent target structure comprises an annular support member and an extremely low-mass thin-nlm storage membrane of a homogeneous polycrystalline low-mass thin-nlm storage membrane of a homogeneous polycrystalline oxide extending across the annular suppor-t member and supported solely at its periphery by the support member.
  • This type of structure is particularly adapted for extremely high sensitivity and improved resolution. Additionally, it is particularly adapted for high resonant frequencies to avoid undesirable mechanical vibrations and resultant unwanted electric signal modulations.
  • the methods disclosed and claimed in the mentioned Hannam application are eifective for forming the described thin-film target.
  • the membranes In manufacturing the above-described type of target electrode, it is desirable to insure sufficient tensioning of the membranes so as to maintain the resonant frequency thereof at a desirable high amount thereby to insure that the amplitude of vibrations will be maintained desirably low. Additionally, it is desirable to reduce the grain size of the oxide grains in the target membrane to avoid detection of grain boundary lines in images transmitted by such targets. Further, it is desirable to avoid adverse effects on the electrical characteristics of targets which can result from materials evolving from the target support means and depositing on the membrane during processing and operation.
  • a primary object of my invention is to provide a new and improved target electrode assembly and a new and improved target membrane therein.
  • Another object of my invention is to provide a new and improved target structure including a new and improved 3,090,83l Patented May 2l, i963 2 thin-nlm target membrane adapted for improved performance.
  • Another object of my invention is to provide a new and improved target electrode structure including a new and improved thin-film target electrode adapted for increased resonant frequency, reduced amplitudes of vibration and substantially reduced membrane graininess.
  • Another object of my invention is to provide new and improved methods of manufacturing thin-nlm storage targets.
  • a storage target structure including an annular support member corresponding in diameter or transverse dimension generally to the diameter of a mesh electrode usually used with a target electrode. Extending across the support member and supported solely thereby is a membrane of approximately 500 to approximately 1000 angstroms thick formed of a layer of interconnected line-grained homogeneous polycrystalline magnesium oxide held taut by a glassy phase oxide binder iilling the interstices between the crystalline oxide grains for enhancing the adhesion of the crystalline oxide grains.
  • the target electrode can be manufactured according to several methods of my invention all of which involve, in one form or another, the introduction into the process of forming the membrane, of an oxide or hydroxide ingredient which is caused to wet ⁇ the crystalline oxide and provide the glassy phase binder in the nished article.
  • Figure l is an enlarged sectional view of a storage target structure constructed in accordance with an embodiment of my invention and wherein the thicknesses of the various layers of material are shown exaggeratedly for ease of illustration;
  • FIGURE 2 is an enlarged fragmentary sectional view illustrating in detail the structure of my improved target assembly.
  • FIGURE 1 a storage target assembly generally designated 1 and constructed according to an embodiment of my invention.
  • 'Ihe target 1 includes a ⁇ first annular support member 2 to the upper surface of which is secured a second annular support member or ring 3.
  • the ring 3 includes a core 4 formed preferably of molybdenum and bearing a coating 5 formed of a metal which is highly oxidation resistant and preferably has a low vapor pressure.
  • the particular structure and purpose of the described ring 3 will be brought out in greater detail hereinafter.
  • the membrane 6 is formed basically of a layer of inter-connected finegrained homogeneous polycrystalline oxide which is semi-conducting and adapted for substantially straight through electron conduction along the boundaries between the grains.
  • the grains are homogeneous polycrystalline magnesium oxide having an average grain size up to approximately only 10 microns and the thiclness of the membrane 6 is between approximately 500 angstroms and approximately 1000 angstorms and preferably about 750 angstroms.
  • the membrane 6 is self-sustaining in that it is adapted for being supported solely at its periphery by the ring 3.
  • the membrane l6 is substantially identical to that disclosed in the above-noted Hannam patent.
  • My invention differs from the patented Hannam structure, however, in that it provides a binding agent present in the interstices between the granules of the membrane 6 which binding agent insures tautness of the membrane. In some cases the tightening can be up to approximately times greater than where no binder is used.
  • the :binder comprises a viscous phase or glassy phase which is indicated at 7 and both lls the interstices between the individual grains of oxide crystals indicated at 8 and extends over the exposed surfaces of some of the grains 8.
  • the lglassy phase 7 gives the
  • the glassy phase is of a material and ofsuch thinness on the exposed surfaces of the oxide granules as not to subtract from the desired substantially straight through grain boundary conduction of electrons through the membrane.
  • the binder 7 serves to tighten the membrane without detracting from ⁇ the desired electrical characteristics of the thin homogeneous polycrystalline magnesium oxide of which the membrane is basically formed.
  • the binder 7 can advantageously comprise the glassy phases of the oxides and hydroxides of boron, silicon, calcium, strontium, barium, sodium, lithium, potassium, germanium and combinations thereof.
  • this group of materials will be referred to as the preferred group.
  • the methods of my invention and -whereby the membrane structure of FIGURES 1 land 2 can be formed are all directed to membrane-forming processes into which is introduced a compound adapted Ifor providing the described glassy phase binder between the crystalline oxide granules and, in most cases, for reducing the grain size or retarding the grain growth of the polycrystalline oxide during oxidation.
  • the compound for forming the glassy phase can be introduced into the process before the granular polycrystalline oxide portion of the membrane is formed.
  • the glassy phase forming ingredient will be present during the formation of the polycrystalline oxide portion of the membrane to assist in retarding grain growth and thus determining the iin-al grain size of the polycrystalline oxide and to insure satisfactory permeation of the interstices lbetween the oxide grains by the glassy phase binder.
  • the glassy phase forming compound can be introduced into the process of manufacturing the membrane of FlGURES 1 and 2 after the granular polycrystalline oxide portion of the membrane is formed. In this case the compound will still be present for forming the glassy phase binder in the interstices between the polycrystalline oxide grains.
  • the import-ant 'feature of my invention involving the reaction between the glassy phase forming compound and the granular polycrystalline oxide, or wetting of the crystalline oxide by the glassy phase can be accomplished by various methods of introducing the mentioned glassy phase forming oxide so long as it is present and heated in association with the granular polycrystalline oxide which can be either while the polycrystalline oxide is forming vinto a membrane or after it has Ibeen formed as a membrane.
  • Method #I One method of manufacturing a storage membrane according to my invention involves dissolving a compound of materials selected from the above-noted pre- The resultant solution is then used as a thinner lfor nitrocellulose and the thusly thinned nitrocellulose is used to form a vaporizable support film on an annular support :member which thus carries the mentioned compound from ythe preferred group.
  • a magnesium coating is provided on the support nlm and the assembly is heated in an oxidizing atmosphere to'decompose the vaporizable Fabric, convert the magnesium to a fine-grain homogeneous polycrystalline magnesium oxide membrane and to convert the compound in the vaporizable llm to the glassy phase binding agent between the grains of the crystalline oxide constituting the major portion of the membrane. ln the processing, the mentioned compound also serves in causing the grain size to be smaller than-would be obtained in the absence of such compound.
  • boron oxide or boron hydroxide yup can dissolve either boron oxide or boron hydroxide yup to com-plete saturation in a common nitrocellulose solvent such as butyl acetate.
  • concentration is approximatelyV .'25 part of the compound to approximately 1000 parts of the solvent by weight.
  • nitrocellulose is thinned with the solvent bearing the mentioned compound in a proportion of approximately 0.1% to 10% by weight.
  • a small quantity of the thusly thinned nitrocellulose is dropped onto the surface of a pan of water.
  • This solution spreads out on the surface of the water and into a thin iilm due to surface tension and the solvent evaporates, leaving -a plastic lm bearing the oxide compound on the Surface of the Water.
  • the membrane support ring 3 which has been placed in the water either prior to formation of the iilm or which is immersed in the water at the outer portion of the film, is raised gently to pick up the film on the surface of the ring.
  • the ring After the iilm has been dried completely on lthe ring the ring is placed in an evaporator, and under vacuum a thin layer of metallic magnesium is formed on one side of the vaporizable film.
  • the thickness of the magnesium coating thus evaporated on the liilm is determined by the desired mechanical and electrical characteristics of the target electrode and is controlled to provide a finished target membrane of the above-discussed desired thickness.
  • the assembly is placed in an oven and heated in an oxidizing atmosphere, which can be air, at a temperature of approximately Y480" C. -up to approximately 520 C. for a period of approximately 3 hours.
  • This baking step serves to decompose and vaporize the nitrocelluloselm, to convert the magnesium toa linegrained homogeneous polycrystalline magnesium oxide and to convert .the boron oxide borne by the nitrocellulose to a glassy substantially clear translucent medium or binder which appears between the interstices of the oxide granules and extends in a very thin amount over the grains. This gives the membrane a substantially glassy appearance.
  • the binderV can serve to tighten the membrane up to approximately l0 times ygreater than obtainable some membranes com-V posed of essentially only magnesium oxide. Still further, while the binder is a yglassy substance .and extends to some degree over the surfaces of the individual oxide granules, it does not subtract ffrom the above-described desired electric characteristics of the membrane, including the substantially straight through grain boundary electron conduction.
  • Method #2 Another method of manufacturing a storage tube membrane according to my invention also involves dissolving a compound of material from the above-noted preferred group in a solvent thereof. Then a vaporizable nitrocellulose support iilm is provided on an annular support and the film is coated, either before or after the deposition of a magnesium layer thereon, with the compoundbearing solution either by spraying or dipping.
  • the solvent in that solution is preferably a poor solvent for nitrocellulose to avoid adverse effects when applied to the nitrocellulose support film.
  • the assembly is baked in an oxidizing atmosphere for rthe same duration and the same temperature described above in respect to Method #1.
  • a plain nitrocellulose solvent or in other words one to which no oxide compound has been added, is used for forming the thin plastic support film on the surface of a pan of water. Then the film is picked up on the support ring in the manner described above.
  • the hlm After the hlm has dried on the ring it can, for example, be coated with a solution of boron or boron hydroxide and Water or alcohol. Preferably, this coating step is accomplished by spraying the solution in a fine mist 0r haze on the support film. This method avoids undesirable spot formation or relatively large marks which can result due to uneven drying.
  • the coating of the support lm with the oxide-carrying solution can be effected by dipping.
  • dipping is employed, and if alcohol is utilized as the compound solvent, the dipping operation is preferably carried out in susccessive steps.
  • the film can be first dipped into a five percent concentration of alcohol in pure water, then into a ten percent alcoholwater solution, then twenty percent, thirty percent, forty percent and fifty percent and up to sixty percent solution of alcohol and water, with yall such solutions bearing some of the oxide compound from the preferred group of materials noted above and preferably in amounts up to saturation.
  • a layer of magnesium is evaporated on the vaporizable support film and the assembly is baked -in an oxidizing atmosphere for preferably the same time duration and at preferably the sarne temperatures described above in connection with Method #1.
  • This thermal treatment results in the formation of a target electrode identical in structure and purpose to that described above and illustrated in FIGURES 1 and 2.
  • the spraying or dipping operation whereby the oxide compound for the binder is deposited on the support film can take place after the metallic magnesium layer is deposited on the vaporizable film.
  • a thermal treatment of the assembly identical to that described above is carried out. This procedure is also effective for affording the presence of the glassy phase binder in the finished article for tightening the polycrystalline oxide membrane and for cooperating in providing reduced graininess of the membrane.
  • the finished article obtained with this method is also identical in structure and purpose to that shown in FIGURES 1 and 2.
  • Method #3 Another method according to my invention involves depositing a dry oxide or hydroxide, instead of an oxide solution, on the vaporizable Support film before or after the evaporization thereon of the metallic magneslum.
  • this method of my invention involves first forming a plain nitrocellulose thin plastic film on a support ring in the same manner as described above. After the film is dry on the ring it can, for example, be coated by evaporation with a deposit of boron oxide or hydroxide. Due to the extreme thinness of the deposition employed it is extremely diliicult to determine the optimum thickness of the oxide or hydroxide t-hus deposited. However, by weighting the deposition and measuring the time and temperature of the evaporation process it has been estimated that the thicknesses of these materials attributing best results are on the order of approximately 1000 angstroms. The temperature of the evaporating vessel is of the order of approximately 800 centigrade to approximately 1200 centigrade when satisfactory deposition is obtained. Also, the time duration of evaporation is preferably of the order of approximately seconds to approximately 300 seconds.
  • the desired oxide or hydroxide deposition can be obtained by evaporating in a vacuum either the elemental metal, the oxides or the hydroxides of boron.
  • the choice of whether a metal, oxide or an lhydroxide will be used in forming the desired oxide deposition depends essentially on the ease of evaporation thereof. It is to be noted, however, that when the elemental metal is evaporated it converts in transit to the hlm and deposits as an oxide if oxygen is present or as an hydroxide if water is present. If oxygen is not present it will convert to provide the desired oxidized deposition upon subjection to an oxidizing atmosphere.
  • the magnesium is evaporated on the oxide coating. It is not essential to follow this sequence of deposition of materials inasmuch as the invention is also effective in providing tightened films when the magnesium is deposited on the support film before the oxide. However, the deposition of the oxide or hydroxide coating before the magnesium is preferred in that the resultant graininess and the overall yield are more satisfactory when this procedure is followed.
  • the atmosphere surrounding the assembly can belet down to air or, in other words, normal atmosphere can be admitted into the evaporating equipment after deposition of the oxide.
  • the oxide or hydroxide deposition can be conducted in vacuum and can be followed immediately by evaporation of magnesium on the coating without letting any air or any other atmosphere into the evaporation equipment. This simplifies the procedure and has a further beneficial effect of preventing formation of a surface lm on the oxide. Additionally, this procedure leads to taut targets as Well as desirably finer grain structure.
  • the thermal treatment of the thus formed assembly is somewhat higher than that described above.
  • the thermal treatment of this form of the invention preferably involves baking the asembly in an oxidizing atmosphere for approximately 2 to 3 hours at approximately 480 C. to approximately 59.0 C.
  • the resultant finished article is the same in ⁇ structure and purpose to that shown in FIGURES l and 2 and described above.
  • oxides and hydroxides of the other materials from the mentioned preferred group can also be deposited on the Vaporizable support film before or after the deposition of the metallic magnesium. Where necessary, the evaporating temperatures and time durations will be selected according to the material.
  • Method #4 Still another method accordingA to my invention involves the addition of a glassy phase forming oxide to the target structure after the magnesium has beenconverted to an oxide.
  • This ⁇ form of my invention involves first forming a target electrode by the method disclosed in the abovenoted Hannam patent. Briefly, this involves providing a vaporizable film on a support ring, subsequently depositing metallic magnesium on the vaporizable film and heating the assembly in an ⁇ oxidizing atmosphere starting at a temperature of about C. and terminating at about 400 C. for a period in the order of approximately five hours for vaporizing the support film and converting the magnesium to a homogeneous polycrystalline magnesium oxide membrane.
  • I introduce the glassy phase forming material to the assembly after the formation of a magnesium oxide membrane. Specifically, I accomplished this by placing the target constructed according to the patented Hannam invention in a vacuum chamber and therein evaporatnig on the magnesium oxide membrane a coating of a material selected from the above-noted preferred group of materials.
  • aandeel thusly coatedA target is then given a thermal treatment involving baking in an oxidizing atmosphere for a period of from approximately minutes to ⁇ approximately 2 hours at approximately 400 C. to approximately 500 C.V
  • This procedure results in tightening the magnesium oxide membrane and the provision of a finished article having substantialy all of the structural features and operational capabilities of the device of FlGURES 1 and 2.
  • a modified form of this method involves baking in an atmosphere other than vacuum, such as air, the already converted magnesium oxide membrane target supported abovera surface on which is provided a layer of material selected from the mentioned preferred group of materials. More specifically and :by way of example, a layer ofthe oxide material can be provided on a tray and a magnesium oxide membrane supported thereabove in closely spaced relation and thus heated in an oxidizing atmosphere for approximately 10 minutes to approximately 2 hours at approximately 400 C. to approximately 500 C. In this manner, the glassy phase Kbinder ingredient is added to the membrane and the layer is modified to constitute yalstructure such as that shown in FIG- URES l and 2 and having the same mechanical and elecvtrical characteristics.
  • the target assembly including the tightened membrane described above and illustrated in FIGURES 1 and 2 is subject 'to thermal expansion and contraction during both processing and operation of fa tube including the assembly.
  • the support ring 3 be formed of a material having compatible expansion and contraction characteristics, such for example as molybdenum.
  • the ring 3 includes a core 4.
  • the material of the core 4 is selected for -predetermined thermal expansion and contraction characteristics which are compatible with those of the membrane target.
  • the coating material can advantageously comprise silver, platinium, gold, chromium, nickel, molybdenum silicide or any like material which will afford a surface on the membrane support ring which is highly refractory and substantially impervious to gaseous ingredients tending to evolve ⁇ from the ring core material and Iwhich can result in the mentioned undesirable sublimation.
  • Nickel plating has been found convenient and reliable With a molybdenum core.
  • a storage electrode comprising an annular support member, a taut membrane supported solely by said member and having a thickness of approximately 500 to approximately 1000 angstroms, said membrane consisting of a layer of interconnected 4granules of an homogeneous polycrystalline semi-conductive oxide characterized by substantially straight through electrical conductivity along the grain boundaries of said membrane, and a glassy phase of a material selected from the group consisting of the oxides and hydroxides of boron, silicon, calcium, strontium, barium, sodium, lithium, potassium, germanium and combinations thereof disposed in the interstices between said oxide granules, said glassy phase contributing to the tautness of said membrane and having no appreciable adverse effect on the electrical characteristics of said membrane.
  • a storage electrode comprising a taut storage membrane consisting of a layer of interconnected ⁇ granules of an homogeneous polycrystalline magnesium oxide and a Yglassy phase of a material selected from the group consisting. of the oxides and hydroxides of boron, silicon, calcium, strontium, barium, sodium, lithium, potassium, germanium and combinations thereof disposed in the interstices between said oxide granules, said glassy phase contributing to the tautness of said membrane and having no appreciable adverse effect on the electrical characteristics of said membrane.
  • a storage electrode comprising a taut storage membrane consisting of a layer of interconnected granules of an homogeneous polycrystalline magnesium oxide having a grain size up to approximately only l0 microns, a ⁇ glassy'phase of a ymaterial selected from the group consisting of the oxides and hydroxides of boron, silicon, calcium, strontium, barium, sodium, lithium, potassium, germanium and combinations thereof disposed in the interstices between said oxide granules, said glassy phase contributing to the tautness of said membrane and having no appreciable adverseeifect on Vthe electrical characteristics of said membrane and said membrane having an overall thickness of approximately 500 to approximately 1000 angstroms.
  • a storage electrode comprising a support member, a taut polycrystalline semi-conductive oxide membrane supported by said member, said support member having thermal expansion and ycontraction characteristics compatible with those ⁇ of said membrane, and at least the surface portion of said support member constituting a metal characterized by high oxidation resistance and low vapor pressure.
  • a storage electrode comprising an annular support member, a taut polycrystallineY semi-conductive oxide membrane extending across and supported at the periphery thereof by said support member, said support member comprising a core of ⁇ a metal having substantially the same thermal expansion and contraction characteristics as said membrane, and said supportmember 'having a coating of a highly refractory material characterized by high oxidation resistance and low vapor pressure.
  • a storage electrode comprising an annular support member, la taut polycrystalline semi-conductive oxide membrane extending across and supported at the periphery thereof by said support member, said support member comprising a core of molybdenum and a surface portion ing across and solely supported at the periphery thereof by formed of a material selected yfrom the group consisting said support member. of silver, platinum, gold, chromium, nickel, molybdenum Silicide and combinations theeof, Referenees Cited 1n the file of this patent 7.

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US30152A 1960-05-19 1960-05-19 Storage target electrode and method of manufacture Expired - Lifetime US3090881A (en)

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NL265016D NL265016A (enrdf_load_html_response) 1960-05-19
US30152A US3090881A (en) 1960-05-19 1960-05-19 Storage target electrode and method of manufacture
GB17959/61A GB915926A (en) 1960-05-19 1961-05-17 Improvements in storage electrode and method of manufacture
DEG32310A DE1234330B (de) 1960-05-19 1961-05-18 Verfahren zum Herstellen einer Speicherelektrode

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3155859A (en) * 1961-02-09 1964-11-03 Gen Electric Target electrode assembly
US3202854A (en) * 1961-02-21 1965-08-24 Rca Corp Pickup tube target having an additive therein for reduced resistivity
US3350591A (en) * 1961-02-21 1967-10-31 Rca Corp Indium doped pickup tube target

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298542B (de) * 1967-07-27 1969-07-03 Fernseh Gmbh Fernsehaufnahmeroehre vom SEC-Typ und Verfahren zu deren Herstellung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2743150A (en) * 1951-06-01 1956-04-24 Rca Corp Glass targets for image orthicons
US2922907A (en) * 1958-05-23 1960-01-26 Gen Electric Target electrode assembly
US2926419A (en) * 1957-05-01 1960-03-01 Franklin H Harris Method of forming a storage electrode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE615315C (de) * 1932-08-20 1935-07-02 Max A E Pressler Fluoreszenzschirm fuer Entladungsroehren, insbesondere fuer Braunsche Roehren
DE615819C (de) * 1933-02-01 1935-07-12 Max A E Pressler Fluoreszenzschirm, insbesondere fuer Braunsche Roehren

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2743150A (en) * 1951-06-01 1956-04-24 Rca Corp Glass targets for image orthicons
US2926419A (en) * 1957-05-01 1960-03-01 Franklin H Harris Method of forming a storage electrode
US2922907A (en) * 1958-05-23 1960-01-26 Gen Electric Target electrode assembly

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3155859A (en) * 1961-02-09 1964-11-03 Gen Electric Target electrode assembly
US3202854A (en) * 1961-02-21 1965-08-24 Rca Corp Pickup tube target having an additive therein for reduced resistivity
US3350591A (en) * 1961-02-21 1967-10-31 Rca Corp Indium doped pickup tube target

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