US3080841A - Alloying-jig for alloying contacts to semi-conductor bodies - Google Patents

Alloying-jig for alloying contacts to semi-conductor bodies Download PDF

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Publication number
US3080841A
US3080841A US43813A US4381360A US3080841A US 3080841 A US3080841 A US 3080841A US 43813 A US43813 A US 43813A US 4381360 A US4381360 A US 4381360A US 3080841 A US3080841 A US 3080841A
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US
United States
Prior art keywords
alloying
jig
molybdenum
contacts
semi
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US43813A
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English (en)
Inventor
Nobel Dirk De
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

Definitions

  • the invention relates to an alloying-jig for alloying contacts to semi-conductor bodies, in particular for the manufacture of transistors, crystal diodes, and similar semi-conductor electrode systems, and in addition to a method of manufacturing such a jig.
  • An alloying-jig is to be understood to mean here apparatus or a device in which one or more spaces are recessed which may serve for receiving semi-conductor bodies and in which in addition one or more apertures are available for fixing the material for the contacts. Beforehand, this material has mostly been shaped as pellets or wafers which may have a diameter of for example a few tenths of a millimeter. Alloying itself is carried out by transferring the jig into an oven and then subjecting it to the required heat treatment.
  • the alloying-jigs are usually manufactured from graphite, because this material can be prepared with a very high degree of purity and such a purity is an important factor in the relative branch of the technology.
  • graphite is not wetted by the melted contact material.
  • graphite is of coarse grain. Owing to the small strength of the graphite, the jig is highly subject to wear.
  • graphite may easily absorb contaminating gases and vapours, so
  • molybdenum is rather hard, it is readily machinable with normal hard steel tools. However, molybdenum is wetted by melted contact material.
  • the invention is based on the further recognition that molybdenum can very well be coated with a refractory, non-metallic film which is not wetted by molten contact material.
  • Such a film on molybdenum turned out to be readily resistant to varying temperature treatment to which jigs for alloying are usually exposed.
  • the application of such a film on molybdenum has already been proposed for corrosion resistant purposes;
  • the invention is based on the further recognition that on molybdenum a skin can be provided which, in contrast with the corrosion resistant oxide film of stainless steel jigs, is substantially not reduced by hydrogen.
  • the alloying-jig according to the invention consists at least partially of molybdenum the surface of which is at least partially provided with a film of refractory, nonmetallic material which substantially cannot be reduced by hydrogen.
  • the film has i been obtained by applying a material with which the molybdenum of the base forms a genetic layer.
  • a genetic layer is to be understood to mean herein a layer mainly consisting of a reaction product between one or more compounds of the material of the base to which the of it adjoining the metal.
  • the jig has to be annealed repeatedly when using it frequently.
  • alloyingjigs of stainless steel in particular of chrome iron steel, which is coated with a corrosion resistant oxide film.
  • Such jigs can be manufactured with a high degree of accuracy and are subject to only little wear.
  • the oxide film prevents the steel from being wetted by the melted contact material. It has appeared, however, that this oxide film may be partially reduced in the hydrogen atmosphere used during alloying, so that such a jig can be subjected only for a short time to a treatment at alloying temperatures, which, moreover may not be too high, the oxide film having to be regenerated practically after each alloying treatment.
  • the coefiicient of linear expansion of most kinds of stainless steel are larger than 10x10, which is much larger than the coefiicients of expansion of the commonly used semi-conductor materials, such as germanium and silicon which amount to 6.1 l0- and 4.2 10- respectively. So the danger exists that during the cooling from the alloying temperature to room temperature the contacts applied may be pushed off by uneven shrinkage of the jig and the semiconductor body.
  • One of the objects of the invention is to supply a material for jigs for alloying which does not have the above draw-backs, is easy and accurate to machine, and has a coefficient of expansion differing only slightly from that of the commonly used semi-conductor materials, such as germanium and silicon.
  • the invention is based on the recognition that molybdenum would be extremely suitable for the above purposes. Its coefficient of linear expansion amounts to approximately 5 10- and consequently differs slightly from that of germanium or silicon. In addition, molybdenum is highly refractory and not readily deformable.
  • the material to be applied for the formation of the film is deposited from the gaseous phase, as a result of which very slight film thicknesses can be obtained, so that in the mechanical processing of the molybdenum for shaping the jig the thickness of the film to be applied need not be taken into account.
  • a suitable film may be formed for example by depositing carbon.
  • the film is preferably formed by depositing silicon or silicon and carbon. Such films have turned out to be very lasting.
  • the jig may be used in particular for alloying several contacts distributed over a relatively large surface of for example a plate-like and/or strip-like semi-conductor body without one or more of the contacts applied being pushed off on cooling after alloying owing to shrinkage of the jig even if the largest distances between apertures for fixing the contact material should amount to 1 cm. or more.
  • the FIGURE shows an alloying-jig on an exaggerated scale, partly in vertical section, partly in perspective.
  • 1 is a graphite plate with a recess 2 in which a strip-like semi-conductor body 3, for example,
  • n-type or p-type silicon is laid.
  • a molybdenum plate 4 provided with a non-metallic surface film 5 of one of the above described kinds, which plate is provided with apertures6.
  • the inner walls of the apertures 6 are likewise coated with the surface film 5.
  • the apertures 6 contain pellets 7 of contact material.
  • they may be of aluminum, or lead antimony, or any of the Well-known contact materials for silicon.
  • the assembly may be transferred to an oven in a normal manner, in which, for example at a temperature of 900 C. in a hydrogen atmosphere, the pellets 7 melt within the apertures 6 and alloy to the silicon body 3.
  • the alloying time may vary between 1 and 30 minutes.
  • the surface film 5 may be applied in a known manner.
  • the molybdenum plate 4 provided with apertures was heated at .1000 C. and a gas current, composed of 10 parts by volume of hydrogen and one part by volume of a gas mixture consisting of hydrogen which was saturated at room temperature with vapour of silicon tetrachloride, was passed along the plate for 10 minutes, after which the resulting layer was reannealed at a temperature of between 1250" C. and 1300 C. .for about 10 minutes in pure hydrogen.
  • Another film of good quality was obtained by first treating the molybdenum part in the above manner at 1000" C. with SiCh-vapour and hydrogen and then treating with a gas mixture consisting of 10 parts by volume of hydrogen and 1 part by volume of butane for 5 minutes at the same temperature after which the layer was reannealed in the above-manner. With the resulting film, the jig turned out to be well useful at a temperature of 1100 C.
  • vapour-plating Both processes are believed to produce a molybdenum silicide or disilicide coating or plating on the molybdenum.
  • the technique described is sometime referred to as vapour-plating.
  • Other suitable coatings include 13 0, SiC, MOC, M 0, which similarly may be formed by a vapour-plating process, which involves reducing or decomposing a volatile compound of the coating material upon the heated molybdenum body or specimen, depositing an adherent coating of the non-volatile reaction products.
  • Apparatus for fusing contact material to impuritysensitive semiconductive bodies in a hydrogen-containing atmosphere comprising support means for receiving and supporting a semiconductive wafer, and a member arranged generally parallel to and mounted on said support and having a surface-coated molybdenum portion overlying and contacting a surface of said wafer, said 1.
  • said surface-coating on the molybdenum portion being an adherent non-metallic refractory surface film selected from the group consisting of molybdenum carbides, molybdenum silicides, silicon carbides, and boron carbide, and which is not wetted by the molten contact material and not substantially reduced by hydrogen.
  • Apparatus for fusing contact material to impuritysensitive semiconductive bodies in a hydrogen-containing atmosphere comprising support means for receiving and supporting a semiconductive wafer, and a thin plate arranged generally parallel to and mounted on said support and having a surface-coated molybdenum portion overlying and contacting a surface of said wafer, said plate containing an aperture overlying the wafer surface for receiving and positioning a mass of contact material in engagement with the wafer surface for melting within said aperture, said surface-coating on the molybdenum portion being an in-situ formed adherent non-metallic refractory surface film selected from the group consisting of molybdenum carbides, molybdenum silicides, silicon carbides, and boron carbide, and which is not wetted by the molten contact material and not substantially reduced by hydrogen.
  • Apparatus for fusing contact material to impuritysensitive semiconductive bodies in a hydrogen-containing atmosphere comprising support means for receiving and supporting a semiconductive wafer, and a molybdenum plate arranged parallel to and mounted on said support and having a surface-coating and overlying and contacting a surface of said wafer, said plate containing a pair of apertures spaced apart and overlying the wafer surface for receiving and positioning a pair of masses of contact material in engagement with the wafer surface for melt ing within said apertures, said surface-coating on the molybdenum plate being an in-situ formed adherent nonmetallic refractory surface film selected from the group consisting of molybdenum carbides, molybdenum silicides, silicon carbides, and boron carbide, and which is not wetted by the molten contact material and not substantially reduced by hydrogen.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
US43813A 1959-08-25 1960-07-19 Alloying-jig for alloying contacts to semi-conductor bodies Expired - Lifetime US3080841A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL242671 1959-08-25

Publications (1)

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US3080841A true US3080841A (en) 1963-03-12

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US (1) US3080841A (es)
CH (1) CH399596A (es)
DE (1) DE1114940B (es)
GB (1) GB887037A (es)
NL (2) NL242671A (es)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3306788A (en) * 1963-02-08 1967-02-28 Int Standard Electric Corp Method of masking making semiconductor and etching beneath mask
US3571919A (en) * 1968-09-25 1971-03-23 Texas Instruments Inc Semiconductor device fabrication
US3719981A (en) * 1971-11-24 1973-03-13 Rca Corp Method of joining solder balls to solder bumps
US3894329A (en) * 1972-07-28 1975-07-15 Sperry Rand Corp Method of making high density electronic interconnections in a termination device
US4194668A (en) * 1976-12-10 1980-03-25 Bbc Brown Boveri & Company Limited Apparatus for aligning and soldering multiple electrode pedestals to the solderable ohmic contacts of semiconductor components
US20010031514A1 (en) * 1993-12-17 2001-10-18 Smith John Stephen Method and apparatus for fabricating self-assembling microstructures

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1282794C2 (de) * 1965-04-01 1975-10-09 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer legierungsmaske fuer die gleichzeitige fertigung mehrerer halbleiteranordnungen
JPS5277590A (en) * 1975-12-24 1977-06-30 Toshiba Corp Semiconductor producing device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices
US2937960A (en) * 1952-12-31 1960-05-24 Rca Corp Method of producing rectifying junctions of predetermined shape
US2964431A (en) * 1959-07-28 1960-12-13 Rca Corp Jig alloying of semiconductor devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2756483A (en) * 1953-05-11 1956-07-31 Sylvania Electric Prod Junction forming crucible

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2937960A (en) * 1952-12-31 1960-05-24 Rca Corp Method of producing rectifying junctions of predetermined shape
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices
US2964431A (en) * 1959-07-28 1960-12-13 Rca Corp Jig alloying of semiconductor devices

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3306788A (en) * 1963-02-08 1967-02-28 Int Standard Electric Corp Method of masking making semiconductor and etching beneath mask
US3571919A (en) * 1968-09-25 1971-03-23 Texas Instruments Inc Semiconductor device fabrication
US3719981A (en) * 1971-11-24 1973-03-13 Rca Corp Method of joining solder balls to solder bumps
US3894329A (en) * 1972-07-28 1975-07-15 Sperry Rand Corp Method of making high density electronic interconnections in a termination device
US4194668A (en) * 1976-12-10 1980-03-25 Bbc Brown Boveri & Company Limited Apparatus for aligning and soldering multiple electrode pedestals to the solderable ohmic contacts of semiconductor components
US20010031514A1 (en) * 1993-12-17 2001-10-18 Smith John Stephen Method and apparatus for fabricating self-assembling microstructures
US6864570B2 (en) 1993-12-17 2005-03-08 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
US20100075463A1 (en) * 1993-12-17 2010-03-25 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
US7727804B2 (en) 1993-12-17 2010-06-01 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures

Also Published As

Publication number Publication date
DE1114940B (de) 1961-10-12
NL126558C (es)
CH399596A (de) 1965-09-30
GB887037A (en) 1962-01-10
NL242671A (es)

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