US3047380A - Method of making semi-conductive material for use in semi-conductive devices - Google Patents

Method of making semi-conductive material for use in semi-conductive devices Download PDF

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Publication number
US3047380A
US3047380A US3865A US386560A US3047380A US 3047380 A US3047380 A US 3047380A US 3865 A US3865 A US 3865A US 386560 A US386560 A US 386560A US 3047380 A US3047380 A US 3047380A
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US
United States
Prior art keywords
germanium
zone
magnesium
oxygen
molten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US3865A
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English (en)
Inventor
Bloem Jan
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J13/00—Discharge tubes with liquid-pool cathodes, e.g. metal-vapour rectifying tubes
    • H01J13/02—Details
    • H01J13/04—Main electrodes; Auxiliary anodes
    • H01J13/06—Cathodes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2893/00—Discharge tubes and lamps
    • H01J2893/0072—Disassembly or repair of discharge tubes
    • H01J2893/0073—Discharge tubes with liquid poolcathodes; constructional details
    • H01J2893/0074—Cathodic cups; Screens; Reflectors; Filters; Windows; Protection against mercury deposition; Returning condensed electrode material to the cathodic cup; Liquid electrode level control
    • H01J2893/0075—Cathodic cups

Definitions

  • thisv invention relates to a method of purifying germanium by means of a zone melting process.
  • a zone melting process usually at least one molten zone is moved through a rod-shaped germanium body in the direction of the length thereof so that the material melts at one side and crystallizes out at the other side, most impurities remaining in the molten germanium and being eifectively carried along by the molten zone so as to be concentrated at the end of the rod-shaped body. After the end is removed, the material remaining is used in the manufacture of transistors, diodes and photo-electric cells.
  • non-segregable impurities which remain distributed comparatively uniformly in the liquid and in the solid germanium during the zone melting process, so that they cannot be simply removed from the germanium by means of a zone melting process.
  • the specific gravity of molten germanium is 5.94.
  • Suitable elements are tantalum, thorium, uranium, beryllium, magnesium and titanium, these elements having very great afiinities for oxygen and segregation constants substantially smaller than 0.01.
  • the oxide produced in the method according to the invention can separate from the molten zone due to its different specific gravity, either by settling, for instance the oxides of tantalum, thorium and uranium with specific gravities larger than 7.5, or by floating on the melt, for instance Q the oxides of beryllium, magnesium and titanium with specific gravities smaller than 4.4.
  • an element is chosen which is capable of forming an oxide having a specific gravity smaller than 4. This ensures arapid separation of the oxide in the form of a layer on the free surface of the melt, which can be readily removed subsequently. Furthermore, the deposition of an oxide coating on the inner surface of the crucible in which the zone melting process is generally carried out is substantially avoided.
  • molten zones are passed through the germanium. This is sufiicient to eliminate an appreciable influence of this element on the properties of the germanium.
  • a very small amount of magnesium for example l() atomic percent
  • a larger amount is used, that is to say at least 0.1 atomic percent, in order to ensure a rapid and more complete binding of the oxygen.
  • an amount of magnesium is dissolved in this zone which is at most 5 atomic percent of the amount of germanium in this zone. If larger amounts of magnesium should be added, an appreciable portion of this magnesium is likely to evaporate and to condense again behind the molten zone and this would provide too high a concentration in a second zone traversing the germanium.
  • FIGURE shows a vertical sectional view of a device for zone melting of germanium, one stage of the method in accordance with the invention being shown.
  • Example 1 In an elongated crucible 1 (see the Fig.) made of graphite having an inner length of 30 cms., a width of 2 cms. and a height of 2.5 cms., there is arranged a bar of germanium 2 of the same length having a cross-sectional area of 4 sq. cms.
  • pellet 3 On the left-hand end of the bar 2 there is placed a pellet 3 having a weight of 0.3 gram and consisting of an alloy of 60 atomic percent of germanium and 40 atomic percent of magnesium.
  • the addition of pure magnesium itself is less suitable as the vapour pressure of magnesium at the melting point of germanium is substantially high (about mm. Hg) and thus the magnesium would evaporate at least to a considerable extent.
  • the crucible *1 is subsequently placed in a horizontal quartz tube after which a stream of pure, dry gaseous hydrogen which does not contain oxygen or nitrogen is passed through the tube 4.
  • a molten zone is passed through the bar 2, which zone has a length of 2 cms., the magnesium dissolving in this zone so that it obtains a content of magnesium of approximately 1 atomic percent.
  • the obtained body is etched with an aqueous solution of HF and HNO the layer of magnesium oxide being entirely removed.
  • a singlecrystal bar can be obtained by means of a seed crystal.
  • a method of removing oxygen from and purifying a germanium body by zone-melting comprising the steps of adding to the germanium body an element having the following combination of properties:
  • a method of removing oxygen from and purifying a germanium body by zone-melting comprising the steps of adding to the germanium body an element having the following combination of properties:
  • a method of removing oxygen from and purifying a germanium body by zone-melting comprising the steps of adding to the germanium body an element selected from the group consisting of tantalum, thorium, uranium, beryllium, magnesium and titanium, thereafter passing a molten zone through the germanium body to sweep the said element if uncombined to one end, and removing any oxide formed by said element from the body and the said one end of the body.
  • A'rnethod of removing oxygen from and purifying a germanium body by Zone-melting comprising the steps of adding to the germanium body a small amount of magnesium, thereafter passing at least two molten zones through the germanium body to sweep the said magnesium if uncombined to one end, and removing any oxide formed by said magnesium from the body surface.
  • a method of removing oxygen from and purifying a germanium body by zone-melting comprising the steps of adding to the germanium body a small amount of beryllium, thereafter passing at least two molten zones through the germanium body to sweep the said beryllium if uncombined to one end, and removing any oxide formed by said beryllium from the body surface.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US3865A 1959-01-23 1960-01-21 Method of making semi-conductive material for use in semi-conductive devices Expired - Lifetime US3047380A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL235410 1959-01-23

Publications (1)

Publication Number Publication Date
US3047380A true US3047380A (en) 1962-07-31

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US3865A Expired - Lifetime US3047380A (en) 1959-01-23 1960-01-21 Method of making semi-conductive material for use in semi-conductive devices

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US (1) US3047380A (cs)
DE (1) DE1187803B (cs)
GB (1) GB939848A (cs)
NL (2) NL235410A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3163523A (en) * 1962-06-27 1964-12-29 Sylvania Electric Prod Method of purifying germanium
US3997313A (en) * 1974-08-06 1976-12-14 International Standard Electric Corporation Method for making oxide glasses
US4165249A (en) * 1976-02-26 1979-08-21 Siemens Aktiengesellschaft Method of purifying germanium bodies
DE3624780A1 (de) * 1985-11-22 1987-05-27 Cominco Ltd Zonenreinigung von cadmium und tellur

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2835612A (en) * 1954-08-23 1958-05-20 Motorola Inc Semiconductor purification process
US2913048A (en) * 1956-02-23 1959-11-17 Rhodes Inc M H Timer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL142932B (nl) * 1948-08-23 Nippon Kayaku Kk Werkwijze ter bereiding van butadieen-1.3 door reactie van een buteen met moleculaire zuurstof.
AT189229B (de) * 1954-06-24 1957-03-11 Western Electric Co Verfahren zur Erzeugung zumindest einer in einem Körper fortschreitenden Zwischenfläche von fester und flüssiger Phase

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2835612A (en) * 1954-08-23 1958-05-20 Motorola Inc Semiconductor purification process
US2913048A (en) * 1956-02-23 1959-11-17 Rhodes Inc M H Timer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3163523A (en) * 1962-06-27 1964-12-29 Sylvania Electric Prod Method of purifying germanium
US3997313A (en) * 1974-08-06 1976-12-14 International Standard Electric Corporation Method for making oxide glasses
US4165249A (en) * 1976-02-26 1979-08-21 Siemens Aktiengesellschaft Method of purifying germanium bodies
DE3624780A1 (de) * 1985-11-22 1987-05-27 Cominco Ltd Zonenreinigung von cadmium und tellur

Also Published As

Publication number Publication date
NL235410A (cs) 1900-01-01
NL101161C (cs) 1900-01-01
GB939848A (en) 1963-10-16
DE1187803B (de) 1965-02-25

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