US3046159A - Method of copper plating by chemical reduction - Google Patents
Method of copper plating by chemical reduction Download PDFInfo
- Publication number
- US3046159A US3046159A US703292A US70329257A US3046159A US 3046159 A US3046159 A US 3046159A US 703292 A US703292 A US 703292A US 70329257 A US70329257 A US 70329257A US 3046159 A US3046159 A US 3046159A
- Authority
- US
- United States
- Prior art keywords
- copper
- plating
- ion
- chemical reduction
- hypophosphite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 238000007747 plating Methods 0.000 title claims description 39
- 239000003638 chemical reducing agent Substances 0.000 title claims description 20
- 229910052802 copper Inorganic materials 0.000 title claims description 20
- 239000010949 copper Substances 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title description 19
- 238000006722 reduction reaction Methods 0.000 title description 19
- 150000001875 compounds Chemical class 0.000 claims description 12
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 6
- 229910001431 copper ion Inorganic materials 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 150000003863 ammonium salts Chemical class 0.000 claims description 4
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- 230000002378 acidificating effect Effects 0.000 claims description 2
- GQZXNSPRSGFJLY-UHFFFAOYSA-N hydroxyphosphanone Chemical compound OP=O GQZXNSPRSGFJLY-UHFFFAOYSA-N 0.000 claims description 2
- 229940005631 hypophosphite ion Drugs 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 19
- 230000008569 process Effects 0.000 description 10
- 239000002738 chelating agent Substances 0.000 description 9
- 239000005749 Copper compound Substances 0.000 description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 7
- 150000001880 copper compounds Chemical class 0.000 description 7
- 239000008139 complexing agent Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- 229960004643 cupric oxide Drugs 0.000 description 4
- 239000005751 Copper oxide Substances 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 2
- 235000011130 ammonium sulphate Nutrition 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 150000002739 metals Chemical group 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910021202 NaH2PO2.H2O Inorganic materials 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- GJYJYFHBOBUTBY-UHFFFAOYSA-N alpha-camphorene Chemical compound CC(C)=CCCC(=C)C1CCC(CCC=C(C)C)=CC1 GJYJYFHBOBUTBY-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910001382 calcium hypophosphite Inorganic materials 0.000 description 1
- 229940064002 calcium hypophosphite Drugs 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000004699 copper complex Chemical class 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- CNALVHVMBXLLIY-IUCAKERBSA-N tert-butyl n-[(3s,5s)-5-methylpiperidin-3-yl]carbamate Chemical compound C[C@@H]1CNC[C@@H](NC(=O)OC(C)(C)C)C1 CNALVHVMBXLLIY-IUCAKERBSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
Definitions
- This invention relates to electroless plating by the deposition of metals by chemical reduction. More particularly the invention relates to improvement in the deposition of copper from chemical reduction plating solutions.
- the chemical reduction process for plating has several advantages over conventional metal electroplating methods.
- Chemical reduction plating provides a deposit of substantially uniform thickness over articles having complex shapes and other irergularities such as small recesses and apertures. Even the remote surfaces in such recesses may be uniformly plated by the chemical reduction process in contrast with conventional electroplating methods :where the plating of such recesses is a practical impossibility.
- Known prior chemical reduction processes however, all employ soluble metallic compounds which are exceptionally light-sensitive and therefore easily reduced. It will be appreciated that the ease of reduction of such light-sensitive compounds renders the process difficult to control.
- a chemical reduction plating solution is employed in which an insoluble compound of copper is included. Since an insoluble copper compound is employed, the plating reaction is not adversely affected by light and greater control of the plating process is thus obtained.
- the insoluble compound is reduced by including in the plating solution a soluble compound which forms a soluble complex with the insoluble compound. This complex is then reducible upon -a suitable surface by the action of a reducing agent.
- metals and alloys which may be coated or plated with copper by the practice of the present invention include steel, iron, ferrous alloys, nickel, cobalt, gold, silver, platinum, copper, copper base alloys, magnesium, and aluminum. It will be understood that superior copper plating results when the surface of the article to be coated is thoroughly cleaned. Hence, in most instances it is desirable to employ conventional plating pretreatments, such as buffing, abrading, or acid etching prior to chemical reduction plating.
- an improved copper deposit or plating is obtained by immersing an article having a surface to be plated into an aqueous solution in contact with water-insoluble cupric oxide and containing, a reducing agent such as sodium hypophosphite, and a chelating or complex-ing agent such as ammonium sulfate or ammonium chloride.
- a reducing agent such as sodium hypophosphite
- a chelating or complex-ing agent such as ammonium sulfate or ammonium chloride.
- the purpose of the complexing agent is to maintain a relatively small portion of the copper in solution in a watersoluble copper complex while permitting a relatively large portion of the copper in the water-insoluble copper oxide to remain out of solution as a copper reserve in contact with the aqueous plating solution.
- the reduction plating is continued until a predetermined thickness of platnited States Patent l 3,046,159 Patented July 24, 1962 ing is obtained or until the copper ion content in the solution and the reserve supply of copper oxide are substantially exhausted.
- the function of the chelating or complexing agent is to continuously form a soluble complex with the insoluble copper compound and to continuously hold the copper in solution in a controlled concentration until reduced to the metallic state.
- the plating solution bath is maintained at a temperature in the range of from about 50 C. to about C. At the higher temperature the plating rate is increased and becomes more difficult to control.
- Chelating or complexing agents suitable in the chemical reduction plating processes of the instant invention are ammonium sulfate and ammonium chloride.
- the reducing agent is preferably the hypophosphite radical which may be introduced as an alkali metal hypophosphite such as sodium or calcium hypophosphite, ammonium hypophosphite, or as hypophosphorous acid.
- a chemical reduction plating solution in accordance with the present invention is formed by adding the insoluble copper compound and the soluble chelating or complexing agent to water.
- the amount of insoluble copper compound is determined by the amount necessary to deposit a desired thickness of copper on a particular surface which amount can, of course, be calculated for a particular article.
- the ratio of the chelating or complexing agent to the insoluble copper compound is not critical. However, it will be understood that if an ion ratio of greater than about 5 to 1 chelating agent to insoluble compound is employed, the copper ion is held so strongly in solution by the chelating agent that its reduction therefrom becomes diflicult and the plating process becomes less controllable.
- hypophosphite reducing agent is then added to the solution, the quantity being determined by the amount of copper to be reduced. In general it is advisable to provide an excess amount of hypophosphite radical to accommodate side reactions and to maintain the plating reaction during the final reduction stages. It has been found that excellent results are obtainable when an ion ratio of hypophosphite radical to insoluble copper compound of 05-40 to 1 is employed.
- the acidity of the solutions in the above examples was adjusted by the addition of a few drops of concentrated H 50 so that the solutions had a pH value of about 3.0.
- the method of copper plating comprising the step of contacting the surface to be plated with an acidic plating solution at a temperature in the range of from about to about C., consisting essentially of a dissolved ammonium salt, a dissolved hypophosphite reducing agent, dissolved copper ions, and an undissolvedcopper ioncontaining compound in contact with the plating solution, the ion ratio of said hypophosphite ion to the undissolved copper ion being in the range of from about 0.5 to about 40, and the ion ratio of the ammonium ion of the dissolved ammonium salt to the undissolved copper ion being in the range of from about 0.025 to about 5.
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
Description
3,046,159 METHOD OF COPPER PLATING BY CHEMICAL REDUCTION Robert R. Brookshire, Canoga Park, Calif., assignor to Hughes Aircraft Company, Culver City, Calif., a corporation of Delaware No Drawing. Filed Dec. 17, 1957, Ser. No. 703,292 3 Claims. (Cl. 117-130) This invention relates to electroless plating by the deposition of metals by chemical reduction. More particularly the invention relates to improvement in the deposition of copper from chemical reduction plating solutions.
The chemical reduction process for plating has several advantages over conventional metal electroplating methods. Chemical reduction plating provides a deposit of substantially uniform thickness over articles having complex shapes and other irergularities such as small recesses and apertures. Even the remote surfaces in such recesses may be uniformly plated by the chemical reduction process in contrast with conventional electroplating methods :where the plating of such recesses is a practical impossibility. Known prior chemical reduction processes, however, all employ soluble metallic compounds which are exceptionally light-sensitive and therefore easily reduced. It will be appreciated that the ease of reduction of such light-sensitive compounds renders the process difficult to control. Generally in order to achieve control it is necessary to carry out the processes under darkroom conditions or to include other additives in the plating solution which increase the solubility of the compounds and thus reduce the light sensitivity thereof. Attempts to increase the solubility of metallic compounds in aqueous solutions have not been markedly successful and such solutions have, in general, failed to produce a good plate.
It is therefore an object of the instant invention to provide an improved method for plating suitable surfaces with copper by a controllable chemical reduction process.
According to the invention a chemical reduction plating solution is employed in which an insoluble compound of copper is included. Since an insoluble copper compound is employed, the plating reaction is not adversely affected by light and greater control of the plating process is thus obtained. The insoluble compound is reduced by including in the plating solution a soluble compound which forms a soluble complex with the insoluble compound. This complex is then reducible upon -a suitable surface by the action of a reducing agent.
Examples of metals and alloys which may be coated or plated with copper by the practice of the present invention include steel, iron, ferrous alloys, nickel, cobalt, gold, silver, platinum, copper, copper base alloys, magnesium, and aluminum. It will be understood that superior copper plating results when the surface of the article to be coated is thoroughly cleaned. Hence, in most instances it is desirable to employ conventional plating pretreatments, such as buffing, abrading, or acid etching prior to chemical reduction plating.
In the practice of a specific embodiment of the invention an improved copper deposit or plating is obtained by immersing an article having a surface to be plated into an aqueous solution in contact with water-insoluble cupric oxide and containing, a reducing agent such as sodium hypophosphite, and a chelating or complex-ing agent such as ammonium sulfate or ammonium chloride. The purpose of the complexing agent is to maintain a relatively small portion of the copper in solution in a watersoluble copper complex while permitting a relatively large portion of the copper in the water-insoluble copper oxide to remain out of solution as a copper reserve in contact with the aqueous plating solution. The reduction plating is continued until a predetermined thickness of platnited States Patent l 3,046,159 Patented July 24, 1962 ing is obtained or until the copper ion content in the solution and the reserve supply of copper oxide are substantially exhausted. The function of the chelating or complexing agent is to continuously form a soluble complex with the insoluble copper compound and to continuously hold the copper in solution in a controlled concentration until reduced to the metallic state. During the plating process the plating solution bath is maintained at a temperature in the range of from about 50 C. to about C. At the higher temperature the plating rate is increased and becomes more difficult to control. Chelating or complexing agents suitable in the chemical reduction plating processes of the instant invention are ammonium sulfate and ammonium chloride. The reducing agent is preferably the hypophosphite radical which may be introduced as an alkali metal hypophosphite such as sodium or calcium hypophosphite, ammonium hypophosphite, or as hypophosphorous acid.
A chemical reduction plating solution in accordance with the present invention is formed by adding the insoluble copper compound and the soluble chelating or complexing agent to water. The amount of insoluble copper compound is determined by the amount necessary to deposit a desired thickness of copper on a particular surface which amount can, of course, be calculated for a particular article. The ratio of the chelating or complexing agent to the insoluble copper compound is not critical. However, it will be understood that if an ion ratio of greater than about 5 to 1 chelating agent to insoluble compound is employed, the copper ion is held so strongly in solution by the chelating agent that its reduction therefrom becomes diflicult and the plating process becomes less controllable. Likewise employing a ratio of less than about 0.025 to 1 chelating agent to insoluble compound results in an extremely low rate of plating or no plating at all since there is an insufficient amount of chelating agent to form a significant amount of soluble complex. The hypophosphite reducing agent is then added to the solution, the quantity being determined by the amount of copper to be reduced. In general it is advisable to provide an excess amount of hypophosphite radical to accommodate side reactions and to maintain the plating reaction during the final reduction stages. It has been found that excellent results are obtainable when an ion ratio of hypophosphite radical to insoluble copper compound of 05-40 to 1 is employed.
The following are illustrative examples of initial plating bath compositions and conditions in accordance with the present invention wherein the quantities, where applicable, are expressed in terms of grams per litre:
NaH PO .H O NH Cl 0.1 Temperature, C. 93.0 P 3.0 Work load (cmF/cmfi) 0.25 Average plating rate (mgs./cm. /hr.) 160-175 Example 4 CuO 3.0 NaH2PO2.H2O 1 NH Cl 0.1 Temperature, C. 93.0 pH 3.0 Work load (cm. /cm. 0.25 Average plating rate (mgs/cmP/hr.) 30.0
The acidity of the solutions in the above examples was adjusted by the addition of a few drops of concentrated H 50 so that the solutions had a pH value of about 3.0.
It will thus be understood from the foregoing description and examples of the invention that an improved method of plating copper by chemical reduction has been provided in which the reduction action is not sensitive to light and is more controllable whereby an improved plating of copper is obtained. It should be understood that, although the invention has been described with specific reference to particular embodiments thereof, it is not to be so limited since changes and alterations therein may be made which are within the intended scope of the invention as defined in the claims appended.
What is claimed is:
1. The method of copper plating comprising the step of contacting the surface to be plated with an acidic plating solution at a temperature in the range of from about to about C., consisting essentially of a dissolved ammonium salt, a dissolved hypophosphite reducing agent, dissolved copper ions, and an undissolvedcopper ioncontaining compound in contact with the plating solution, the ion ratio of said hypophosphite ion to the undissolved copper ion being in the range of from about 0.5 to about 40, and the ion ratio of the ammonium ion of the dissolved ammonium salt to the undissolved copper ion being in the range of from about 0.025 to about 5.
2. The method according to claim 1, wherein the undissolved copper compound is copper oxide.
3. The method according to claim 2, wherein the plating solution is maintained at a pH of about 3.
References Cited in the file of this patent UNITED STATES PATENTS 2,472,393 Avallone et al June 7, 1949 2,519,672 Lawless Aug. 22, 1950 2,702,253 Bergstrom Feb. 15, 1955 2,703,295 Kantrowitz Mar. 1, 1955 2,726,969 Spaulding Dec. 13, 1955 2,791,516 Chambers et al May 7, 1957 2,852,450 Mundell Sept. 16, 1958 2,872,346 Miller Feb. 3, 1959 2,872,359 Sau-bestre Feb. 3, 1959 2,874,072 Cahill et a1. Feb. 17, 1959
Claims (1)
1. THE METHOD OF COPPER PLATING COMPRISING THE STEP OF CONTACTING THE SURFACE TO BE PLATED WITH AN ACIDIC PLATING SOLUTION AT A TEMPERATURE IN THE RANGE OF FROM ABOUT 50* TO ABOUT 110*C., CONSISTING ESSENTIALLY OF A DISSOLVED AMMONIUM SALT, A DISSOLVED HYPOPHOSPHITE REDUCING AGENT, DISSOLVED COPPER IONS, AND AN UNDISSOLVED-COPPER IONCONTAINING COMPOUND IN CONTACT WITH THE PLATING SOLUTION, THE ION RATIO OF SAID HYPOPHOSPHITE ION TO THE UNDISSOLVED COPPER ION BEING IN THE RANGE OF FROM ABOUT 0.5 TO ABOUT 40, AND THE ION RATIO OF THE AMMONIUM ION OF THE DISSOLVED AMMONIUM SALT TO THE UNDISSOLVED COPPER ION BEING IN THE RANGE OF FROM ABOUT 0.025 TO ABOUT 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US703292A US3046159A (en) | 1957-12-17 | 1957-12-17 | Method of copper plating by chemical reduction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US703292A US3046159A (en) | 1957-12-17 | 1957-12-17 | Method of copper plating by chemical reduction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3046159A true US3046159A (en) | 1962-07-24 |
Family
ID=24824811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US703292A Expired - Lifetime US3046159A (en) | 1957-12-17 | 1957-12-17 | Method of copper plating by chemical reduction |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US3046159A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3268422A (en) * | 1960-06-09 | 1966-08-23 | Nat Steel Corp | Electroplating bath containing aluminum and manganese-bearing materials and method of forming aluminummanganese alloy coatings on metallic bases |
| US3303029A (en) * | 1964-01-23 | 1967-02-07 | Shipley Co | Tin coating of copper surfaces by replacement plating |
| US3403035A (en) * | 1964-06-24 | 1968-09-24 | Process Res Company | Process for stabilizing autocatalytic metal plating solutions |
| DE1300762B (en) * | 1965-03-23 | 1969-08-07 | W Kampschulte & Cie Dr | Alkaline solution and process for depositing copper on non-conductors |
| DE2715850A1 (en) * | 1976-04-08 | 1977-10-13 | Kollmorgen Tech Corp | PROCESS FOR THE DEPOSITION OF COPPER OR COPPER ALLOYS FROM ELECTRONIC BATTERIES |
| DE2920766A1 (en) * | 1978-05-25 | 1979-11-29 | Macdermid Inc | SOLUTION AND METHOD FOR ELECTRONIC COPPER DEPOSITION USING A HYPOPHOSPHITE REDUCING AGENT |
| US4265943A (en) * | 1978-11-27 | 1981-05-05 | Macdermid Incorporated | Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions |
| US4272570A (en) * | 1980-04-11 | 1981-06-09 | Sunbeam Corporation | Provision of surface layers of copper or copper alloyed with zinc on die castings of zinc or zinc alloys |
| US4325990A (en) * | 1980-05-12 | 1982-04-20 | Macdermid Incorporated | Electroless copper deposition solutions with hypophosphite reducing agent |
| DE3045281C2 (en) * | 1979-06-19 | 1984-03-08 | Institut fiziko-chimičeskich osnov pererabotki mineral'nogo syr'ja Sibirskogo otdelenija Akademii Nauk SSSR, Novosibirsk | SOLUTION AND METHOD FOR ELECTROCHEMICAL METALLIZATION OF DIELECTRICS |
| US5523174A (en) * | 1993-05-07 | 1996-06-04 | Ibiden Co., Ltd. | Printed circuit boards |
| US5827604A (en) * | 1994-12-01 | 1998-10-27 | Ibiden Co., Ltd. | Multilayer printed circuit board and method of producing the same |
| US20080148904A1 (en) * | 2004-08-20 | 2008-06-26 | Masanori Tomonari | Copper Microparticle and Process for Producing the Same |
| US9617644B2 (en) | 2010-03-19 | 2017-04-11 | Andreas Königshofen | Method for direct metallization of non-conductive substrates |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2472393A (en) * | 1944-09-25 | 1949-06-07 | American Steel & Wire Co | Process and bath for copper coating ferrous metal |
| US2519672A (en) * | 1947-01-13 | 1950-08-22 | Charles F Lawless | Composition for bluing metal |
| US2702253A (en) * | 1950-11-01 | 1955-02-15 | Gasaccumulator Svenska Ab | Surface metallizing method |
| US2703295A (en) * | 1952-10-07 | 1955-03-01 | Morris S Kantrowitz | Nonelectrolytic method for making bimetallic offset printing copper plating composition and method of plating |
| US2726969A (en) * | 1953-12-03 | 1955-12-13 | Gen Motors Corp | Chemical reduction plating process |
| US2791516A (en) * | 1953-09-17 | 1957-05-07 | Gen Motors Corp | Electroless plating |
| US2852450A (en) * | 1954-06-10 | 1958-09-16 | Donnelley & Sons Co | Method of copper plating |
| US2872346A (en) * | 1956-05-21 | 1959-02-03 | Miller Adolph | Metal plating bath |
| US2872359A (en) * | 1956-12-03 | 1959-02-03 | Sylvania Electric Prod | Copper sensitizers |
| US2874072A (en) * | 1956-09-17 | 1959-02-17 | Gen Electric | Autocatalytic copper plating process and solution |
-
1957
- 1957-12-17 US US703292A patent/US3046159A/en not_active Expired - Lifetime
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2472393A (en) * | 1944-09-25 | 1949-06-07 | American Steel & Wire Co | Process and bath for copper coating ferrous metal |
| US2519672A (en) * | 1947-01-13 | 1950-08-22 | Charles F Lawless | Composition for bluing metal |
| US2702253A (en) * | 1950-11-01 | 1955-02-15 | Gasaccumulator Svenska Ab | Surface metallizing method |
| US2703295A (en) * | 1952-10-07 | 1955-03-01 | Morris S Kantrowitz | Nonelectrolytic method for making bimetallic offset printing copper plating composition and method of plating |
| US2791516A (en) * | 1953-09-17 | 1957-05-07 | Gen Motors Corp | Electroless plating |
| US2726969A (en) * | 1953-12-03 | 1955-12-13 | Gen Motors Corp | Chemical reduction plating process |
| US2852450A (en) * | 1954-06-10 | 1958-09-16 | Donnelley & Sons Co | Method of copper plating |
| US2872346A (en) * | 1956-05-21 | 1959-02-03 | Miller Adolph | Metal plating bath |
| US2874072A (en) * | 1956-09-17 | 1959-02-17 | Gen Electric | Autocatalytic copper plating process and solution |
| US2872359A (en) * | 1956-12-03 | 1959-02-03 | Sylvania Electric Prod | Copper sensitizers |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3268422A (en) * | 1960-06-09 | 1966-08-23 | Nat Steel Corp | Electroplating bath containing aluminum and manganese-bearing materials and method of forming aluminummanganese alloy coatings on metallic bases |
| US3303029A (en) * | 1964-01-23 | 1967-02-07 | Shipley Co | Tin coating of copper surfaces by replacement plating |
| US3403035A (en) * | 1964-06-24 | 1968-09-24 | Process Res Company | Process for stabilizing autocatalytic metal plating solutions |
| DE1300762B (en) * | 1965-03-23 | 1969-08-07 | W Kampschulte & Cie Dr | Alkaline solution and process for depositing copper on non-conductors |
| DE2715850A1 (en) * | 1976-04-08 | 1977-10-13 | Kollmorgen Tech Corp | PROCESS FOR THE DEPOSITION OF COPPER OR COPPER ALLOYS FROM ELECTRONIC BATTERIES |
| DE2920766A1 (en) * | 1978-05-25 | 1979-11-29 | Macdermid Inc | SOLUTION AND METHOD FOR ELECTRONIC COPPER DEPOSITION USING A HYPOPHOSPHITE REDUCING AGENT |
| US4265943A (en) * | 1978-11-27 | 1981-05-05 | Macdermid Incorporated | Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions |
| US4576689A (en) * | 1979-06-19 | 1986-03-18 | Makkaev Almaxud M | Process for electrochemical metallization of dielectrics |
| DE3045281C2 (en) * | 1979-06-19 | 1984-03-08 | Institut fiziko-chimičeskich osnov pererabotki mineral'nogo syr'ja Sibirskogo otdelenija Akademii Nauk SSSR, Novosibirsk | SOLUTION AND METHOD FOR ELECTROCHEMICAL METALLIZATION OF DIELECTRICS |
| US4272570A (en) * | 1980-04-11 | 1981-06-09 | Sunbeam Corporation | Provision of surface layers of copper or copper alloyed with zinc on die castings of zinc or zinc alloys |
| US4325990A (en) * | 1980-05-12 | 1982-04-20 | Macdermid Incorporated | Electroless copper deposition solutions with hypophosphite reducing agent |
| US5523174A (en) * | 1993-05-07 | 1996-06-04 | Ibiden Co., Ltd. | Printed circuit boards |
| US5827604A (en) * | 1994-12-01 | 1998-10-27 | Ibiden Co., Ltd. | Multilayer printed circuit board and method of producing the same |
| US20080148904A1 (en) * | 2004-08-20 | 2008-06-26 | Masanori Tomonari | Copper Microparticle and Process for Producing the Same |
| US7828872B2 (en) * | 2004-08-20 | 2010-11-09 | Ishihara Sangyo Kaisha, Ltd. | Copper microparticle and process for producing the same |
| US9617644B2 (en) | 2010-03-19 | 2017-04-11 | Andreas Königshofen | Method for direct metallization of non-conductive substrates |
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