US2887630A - Transistor - Google Patents

Transistor Download PDF

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Publication number
US2887630A
US2887630A US640212A US64021257A US2887630A US 2887630 A US2887630 A US 2887630A US 640212 A US640212 A US 640212A US 64021257 A US64021257 A US 64021257A US 2887630 A US2887630 A US 2887630A
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US
United States
Prior art keywords
semi
conductive
transistor
envelope
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US640212A
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English (en)
Inventor
Nijland Louis Marius
Manintveld Jan Adrianus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Philips Corp
North American Philips Co Inc
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US Philips Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Philips Corp filed Critical US Philips Corp
Application granted granted Critical
Publication of US2887630A publication Critical patent/US2887630A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Definitions

  • the invention relates to a method of producing a semiconductive electrode system, more particularly a transistor, in which a semi-conductive body .of, for example, germanium or silicon is provided with at least one rectifying electrode and an ohmic connection, this structure being then etched and housed in an envelope.
  • the invention furthermore relates to a semi-conductive electrode system, more particularly a transistor, housed in an airtight'envelope.
  • the invention has been found to be of particular importance for transistors, for the purpose of increasing the current amplification factor ea which is defined by the equation:
  • I and l designate the collector current and the base current respectively, measured at a constant collector voltage V
  • the invention has for its object to provide inter alia a method by which a semi-conductive electrode system having a high current amplification factor and great stability can be manufactured. It has furthermore the advantage that, in a simple manner, the surface of the semiconductive body can be coated with very thin, effective layers even of molecular thickness.
  • the semi-conductive body with its electrode and ohmic connection is introduced, subsequent to the etching operation, into a milieu containing at least a nitrogen-oxygen compound.
  • Use is preferably made of a nitrogen-oxygen compound which contains molecules of N and N 0 the equilibrium shifting in the direction of the first-mentioned compound at higher temperatures.
  • water vapour may also be added.
  • the invention is not restricted to a particular semi-conductive substance, it is particularly suitable for use with semi-conductive electrode systems, for example, alloy transistors, of which the semi-conductive body consists of silicon, since by the conventional means, which in the case of germanium yielded satisfactory values of the current amplification factor, unsatisfactory results are obtained in the case of silicon.
  • a particular embodiment of the invention consists in that the semi-conductive body with its electrode ,and ohmic connection is arranged in a vacuum-tight envelope 2,887,630 Patented May 19, 1959 containing at least one nitrogen-oxygen compound and, if desired, water vapour.
  • silicon transistors an additional effect is obtained, if the gaseous mixture in the envelope, before this envelope is finally closed, is pumped oif partly, preferably down to a pressure of less than 10- mm. Hg.
  • a particular embodiment of a semi-conductive electrode system especially a transister according to the invention, contains in the vacuum-tight envelope at least one nitrogen-oxygen compound. There may furthermore be water vapour in the envelope.
  • the transistor comprises a thin semi-conductive disc 1 provided with an emitter electrode 2, a collector electrode 3 and an annular ohmic base connection 4.
  • the electrodes 2 and 3 and the ohmic connection 4 are each connected to supply conductors 5, 6, 7 passing through a glass pinch 8, and are passed to the outside through the glass base 9, to which the glass bulb 10 is sealed.
  • the envelope (9, 10) contains N0 (N 0,) vapour at a pressure of about 10-l mm. Hg.
  • Example 1 An alloy transistor device comprising a semi-conductive body consisting of p-type silicon provided with a base connection consisting of an alloy of by weight of indium and 10% by weight of copper, and further provided with an emitter electrode and a collector electrode both consisting of 75% by Weight of gold and 25% by weight of antimony was etched for about twenty seconds in a bath containing a mixture of a 52% aqueous solution of hydrofluoric acid and a 97% aqueous solution of nitric acid in the volume ratio 1:3 and subsequently washed in streaming distilled deionised water and dried. Subsequent to the etching treatment, the transistor was arranged in a glass envelope containing dry nitrogen dioxide (di-nitrogen-tetroxide).
  • the current amplification factor a which amounted to 5 after the etching treatment, rose by this treatment almost immediately to a value 15. Then water vapour was introduced into the envelope to a quantity of less than 1% of the N0 content, which increased a further to the value 18. During the pumping out of this gaseous mixture a increased further to attain a maximum value of 22 at a pressure of about 10- mm. Hg, after which the glass envelope was sealed tight. In order to check the stability of the transistor, the structure was then heated, so that ar increased continuously until at C. a maximum value of 50 was attained. During the cooling to room temperature the same range of variations was reversed, which confirms the stability of the transistor.
  • Example 2 An alloy transistor comprising a semi-conductive body consisting of n-type germanium, provided with a base connection consisting of an alloy of 97% by weight of tin and 3% by weight of antimony, and further provided with an emitter electrode and a collector electrode both consisting of indium, was etched in a bath composed of 2 volume parts 52% aqueous solution of HF, 2 volume parts 97% aqueous solution of HN and volume parts H 0, and subsequently washed in distilled deionised water and dried. The transistor had a current amplification factor of 15.2 after this etching operation. The-transistor was subsequently arranged in an envelope containing dry nitrogen dioxide (di-nitrogen-tetroxide) at a pressure of about mm. Hg.
  • dry nitrogen dioxide di-nitrogen-tetroxide
  • a method of manufacturing a semi-conductive device comprising a semi-conductive body and plural electrode connections to said body and possessing a current amplification factor whose value depends on the surrounding atmosphere, comprising the steps of etching the body, and thereafter introducing the body with its electrode connections into an atmosphere containing a nitrogenoxygen compound.
  • a method of manufacturing a semi-conductive device comprising a semi-conductive body selected from the group consisting of germanium and silicon and having ohmic and rectifying electrode connections to said body, comprising etching the body, and thereafter introducing the body with its electrode connections into an atmosphere containing a nitrogen-oxygen compound.
  • a semi-conductive device comprising an etched semi-conductive body with plural electrode connections to said body and possessing a current amplification factor whose value depends on the surrounding atmosphere, a sealed envelope enclosing the body with its connections, and an atmosphere in said envelope comprising a nitrogen-oxygen compound.
  • a semi-conductive device comprising an etched semi-conductive body selected from the group consisting of germanium and silicon, ohmic and rectifying electrode connections to said body, a vacuum-tight sealed envelope enclosing the body with its connections, and an atmosphere in said envelope comprising a nitrogen-oxygen compound.
  • nitrogen-oxygen compound is selected from the group consisting of nitrogen dioxide and di-nitrogen-tetroxide.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Weting (AREA)
US640212A 1956-02-29 1957-02-14 Transistor Expired - Lifetime US2887630A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL205006 1956-02-29

Publications (1)

Publication Number Publication Date
US2887630A true US2887630A (en) 1959-05-19

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ID=19750747

Family Applications (1)

Application Number Title Priority Date Filing Date
US640212A Expired - Lifetime US2887630A (en) 1956-02-29 1957-02-14 Transistor

Country Status (7)

Country Link
US (1) US2887630A (cs)
BE (1) BE555370A (cs)
CH (1) CH351341A (cs)
DE (1) DE1051984B (cs)
FR (1) FR1167317A (cs)
GB (1) GB831815A (cs)
NL (2) NL205006A (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3145328A (en) * 1957-04-29 1964-08-18 Raytheon Co Methods of preventing channel formation on semiconductive bodies
US3244947A (en) * 1962-06-15 1966-04-05 Slater Electric Inc Semi-conductor diode and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2812480A (en) * 1954-06-23 1957-11-05 Rca Corp Method of treating semi-conductor devices and devices produced thereby

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2812480A (en) * 1954-06-23 1957-11-05 Rca Corp Method of treating semi-conductor devices and devices produced thereby

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3145328A (en) * 1957-04-29 1964-08-18 Raytheon Co Methods of preventing channel formation on semiconductive bodies
US3244947A (en) * 1962-06-15 1966-04-05 Slater Electric Inc Semi-conductor diode and manufacture thereof

Also Published As

Publication number Publication date
CH351341A (de) 1961-01-15
BE555370A (cs)
GB831815A (en) 1960-03-30
NL94711C (cs)
FR1167317A (fr) 1958-11-24
DE1051984B (de) 1959-03-05
NL205006A (cs)

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