US2811682A - Silicon power rectifier - Google Patents
Silicon power rectifier Download PDFInfo
- Publication number
- US2811682A US2811682A US491908A US49190855A US2811682A US 2811682 A US2811682 A US 2811682A US 491908 A US491908 A US 491908A US 49190855 A US49190855 A US 49190855A US 2811682 A US2811682 A US 2811682A
- Authority
- US
- United States
- Prior art keywords
- zone
- type
- terminal
- low
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 16
- 229910052710 silicon Inorganic materials 0.000 title description 16
- 239000010703 silicon Substances 0.000 title description 16
- 239000012535 impurity Substances 0.000 claims description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 239000007787 solid Substances 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000370 acceptor Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 244000019194 Sorbus aucuparia Species 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 235000006414 serbal de cazadores Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- An object of the invention is to increase the power handling capacity of a semiconductive rectifier.
- the invention provides a novel form of semiconductive rectifier.
- Conduction occurs in electronic semiconductors by means of two types of charge carriers, electrons and holes. These carriers can be provided in the semiconductor in several ways including the presence of certain elements in the crystal structure which have either an excess or deficit of valence electrons so that they provide a source of unbound holes or electrons which can be moved by the application of external voltage to the crystal structure.
- n-type those conductors wherein conduction is largely by electrons
- p-type those conductors wherein conduction is largely by holes
- n+ and p+ are used to identify regions which have a more marked predominance of the characteristic type of charge carrier.
- Those elements constituting impurities which contribute unbound electrons to semiconductors are termed donors while those elements which contribute unbound holes are termed acceptors. Acceptors' and donors are referred to as significant impurities to distinguish them from other materials which may be present in the semiconductor.
- the conductivity transition region between zones of opposite conductivity type in a semiconductive body is known as a p-n junction.
- the present invention provides a rectifier which is or ICQ characterized by both low internal losses and a capacity for tolerating substantial temperature rises.
- a feature of the present invention is a rectifying element which comprises a single crystal purified silicon body having a terminal n-type zone characterized by a concentration of phosphorus significant impurities, a terminal p-type zone characterized by a concentration of boron significant impurities, and an intermediate zone having a resistivity higher than that of the terminal zone of corresponding conductivity type.
- an n-type zone is sandwiched between a vapor-solid boron-diffused p+ type zone and a vapor-solid phosphorous diffused n+ type zone.
- the choice of purified silicon as the semiconductive body material provides initial advantages which are multiplied by its association with the chosen significant impurities. Silicon can be made to have very low resistance to forward currents and a very high resistance to reverse currents. Silicon is very stable electronically up to 200 C., permitting heating to this point with little serious effeet. This is in marked contrast to other semiconductive materials, such as germanium.
- boron as the acceptor for doping the p-type surface zone makes possible a thin low-resistance difiused p-type terminal layer.
- Such a boron-diffused layer is found to lend itself readily to low-resistance ohmic connection. This is of considerable importance if internal losses are to be minimized.
- the particular choice of phosphorus as the donor for doping the n+ type zone makes possible a thin low-resistance terminal layer.
- an 11+ type surface zone can be localized contiguous to the n-type zone by the vapor difiusion of phosphorus with no appreciable efiect on the boron p-type layer.
- the provision of a phosphorous-diffused n+ type layer makes possible low-resistance ohmic connection to the n-side of the rectifying junction. This is important for the following considerations.
- An important specific feature of the invention is a particular design which provides extremely low internal losses and possesses advantages in its relative simplicity of preparation.
- This design comprises a single crystal silicon body having a relatively thick intermediate n-type zone of a resistivity of about 0.3 ohm-centimeter, one thin terminal diffused p-type zone having a concentration of boron 1 impurities resulting in a resistivity of about 0.091 ohmcentimeter, and another thinner terminal diffused 11+ type zone having a concentration of phosphorous impurities resulting in a resistivity of about 0.01 ohm-centimeter, together with rhodium ohmic connections to the two terminal zones.
- Fig. 1 represents a cross section of a rectifier element in accordance with the invention.
- Fig. 2 shows two rectifier elements connected for providing full-wave rectification of an alternating signal.
- a single crystal silicon body comprises an intermediate 11- type zone 11 of 0.3 ohm-centimeter resistivity and about 30 mils thickness, a terminal p-type zone 12 about 1.5 mils thick and having a concentration of boron which results in a resistivity of 0.001 ohm-centimeter, and a terminal n+ type zone 13 about 0.5 mil thick having a concentration of phosphorous impurities which results in a resistivity of 0.01 ohm-centimeter.
- Such a body can be formed conveniently, for example, by vapor-solid diffusion techniques of the kind described in copending application Serial No. 414,272, filed March 5, 1954 by C.
- an n-type conductivity silicon cylindrical wafer is heated in a boron trichloride atmosphere at a temperature of approximately 1250" C. for about twenty-three hours to form a thin p-type conductivity surface on the wafer.
- the p-type layer is then removed from one flat end surface of the wafer to expose the n-type zone. Further, heating in a phosphorous atmosphere at a temperature of 1230 C.
- the surface of the low-resistance p-type zone is found to be unaffected by the phosphorous atmosphere, eliminating the need for further. treating of the p-type zone.
- Low-resistance ohmic connections are made to the two terminal zones by electroplating with a suitable noncontaminating metal, such as rhodium, to form coatings 14, 15. Copper leads may then be connected to these coatings 14, 15. v
- a design of the kind described has provided satisfactorily for an extended period average currents of 15 amperes from a rectifying area of a square centimeter with no special provisions for cooling. Such a performance would be considered remarkable in the light of prior art rectifier standards.
- Fig. 2 illustrates schematically the manner in which two rectifying elements can be utilized to provide fullwave rectification of an alternating signal.
- the alterhating voltage to be rectified is applied from a suitable source 21 to the primary winding 22 of the power transformer 2,3.
- the center tap 2,4 of the secondary winding 25 of the transformer is connected to one side of the load, shown here schematically as the resistance 26, the other side of which is connected to the large area metallic coatings plated or fused to the n+ type terminal zones of rectifying elements 31 and 32.
- the two terminals of the secondary Winding 25 are connected, respectively, to the large area metallic coatings plated or fused to the p-type terminal zones of elements 31 and 32. It will be evident that various other configurations are possible for providing full-wave rectification.
- a rectifying element of the kind described can obviously be built in various shapes and sizes to adapt it for specific capacities of power handling. Its capacity to handle currents is determined primarily by its surface area. Its ability to withstand high reverse voltages is found to be determined by the resistivities of the two zones forming the p-n junction, higher resistivities being necessary to withstand higher reverse voltages.
- the rectifying element described specifically is designed to withstand reverse voltages of about volts, the substitution of an intermediate zone of 3.0 ohm-centimeters resistivity would make it possible to withstand reverse voltages of about 225 volts.
- the silicon wafer with which one began was all n-type, such as may be provided by doping the silicon melt from which the silicon crystal is grown with a suitable donor, such as arsenic
- a silicon body which is all p-type such as may be provided by doping the silicon melt with a suitable acceptor, such as gallium.
- a rectifying element in which the silicon body comprises a p type zone intermediate between p+ type and n-type surface zones charactcrized by predominances of boron and phosphorus impurity atoms, respectively.
- luA rectifying element comprising a substantially monocrystalline silicon wafer having an intermediate zone of relatively high specific resistivity of one conductivity type, a first low specific resistivity terminal zone contiguous with one side of the intermediate zone in which boron is the predominant significant impurity, and a second low specific resistivity terminal zone contiguous with the opposite side of the intermediate zone in which phosphorus is the predominant significant impurity, and a pair of electrodes, each making low ohmic resistance connection to a different one of said two terminal zones.
- a rectifier element comprising a substantially monocrystalline silicon wafer having an intermediate zone of a relatively high specific resistivity of one conductivity type, a first low specific resistivity terminal zone which is vapor-solid boron-diffused contiguous with one surface of the intermediate zone, and a second low specific resistivity terminal zone which is vapor-solid phosphorusdiffused contiguous with the opposite surface of the intermediate zone, and a pair of electrodes, each making low ohmic resistance connection to a different one of said two terminal zones.
- a rectifying element comprising a substantially monocrystalline silicon wafer having an n-type intermediate zone, a first vapor-solid boron-diffused p+ type terminal zone contiguous with one side of the intermediate zone, and a second vapor-solid phosphorus-diffused n+ type terminal zone contiguous with the opposite side of the intermediate zone, and a pair of electrodes each making low ohmic resistance connection to a different one of said two terminal zones.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Rectifiers (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE536150D BE536150A (lt) | 1954-03-05 | ||
NL99247D NL99247C (lt) | 1954-03-05 | ||
NL193595D NL193595A (lt) | 1954-03-05 | ||
FR1115845D FR1115845A (fr) | 1954-03-05 | 1954-12-14 | Perfectionnements aux éléments redresseurs au silicium |
DEW15753A DE1033786B (de) | 1954-03-05 | 1955-01-15 | Verfahren zur Herstellung eines Silizium-Gleichrichters |
US491908A US2811682A (en) | 1954-03-05 | 1955-03-03 | Silicon power rectifier |
GB6456/55A GB782664A (en) | 1954-03-05 | 1955-03-04 | Semiconductive rectifying bodies |
CH337583D CH337583A (fr) | 1954-03-05 | 1955-03-04 | Elément redresseur |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41427554A | 1954-03-05 | 1954-03-05 | |
US491908A US2811682A (en) | 1954-03-05 | 1955-03-03 | Silicon power rectifier |
Publications (1)
Publication Number | Publication Date |
---|---|
US2811682A true US2811682A (en) | 1957-10-29 |
Family
ID=27022485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US491908A Expired - Lifetime US2811682A (en) | 1954-03-05 | 1955-03-03 | Silicon power rectifier |
Country Status (7)
Country | Link |
---|---|
US (1) | US2811682A (lt) |
BE (1) | BE536150A (lt) |
CH (1) | CH337583A (lt) |
DE (1) | DE1033786B (lt) |
FR (1) | FR1115845A (lt) |
GB (1) | GB782664A (lt) |
NL (2) | NL193595A (lt) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2931960A (en) * | 1957-01-29 | 1960-04-05 | Siemens Ag | Electric semiconductor p-nu junction devices and method of producing them |
US2937963A (en) * | 1958-07-14 | 1960-05-24 | Int Rectifier Corp | Temperature compensating zener diode construction |
US2943268A (en) * | 1957-07-30 | 1960-06-28 | Texaco Inc | Automatic gain control amplifier circuit |
US2952824A (en) * | 1958-06-18 | 1960-09-13 | Bell Telephone Labor Inc | Silicon alloy diode |
US2959501A (en) * | 1956-05-15 | 1960-11-08 | Siemens Ag | Silicon semiconductor device and method of producing it |
US2962394A (en) * | 1957-06-20 | 1960-11-29 | Motorola Inc | Process for plating a silicon base semiconductive unit with nickel |
DE1104075B (de) * | 1958-05-14 | 1961-04-06 | Telefunken Gmbh | Halbleitergleichrichter, insbesondere Hochfrequenzgleichrichter, mit einer n np- bzw. p pn-Folge der Halbleiterzonen im Halbleiterkoerper und Verfahren zu seiner Herstellung |
US3007092A (en) * | 1957-12-23 | 1961-10-31 | Hughes Aircraft Co | Semiconductor devices |
US3021595A (en) * | 1958-07-02 | 1962-02-20 | Texas Instruments Inc | Ohmic contacts for silicon conductor devices and method for making |
US3051878A (en) * | 1957-05-02 | 1962-08-28 | Sarkes Tarzian | Semiconductor devices and method of manufacturing them |
US3116442A (en) * | 1959-07-27 | 1963-12-31 | Link Belt Co | Silicon rectifier assembly comprising a heat conductive mounting base |
US3120052A (en) * | 1957-03-20 | 1964-02-04 | Bosch Gmbh Robert | Method of making alloyed junction semiconductor devices |
US3225438A (en) * | 1957-12-23 | 1965-12-28 | Hughes Aircraft Co | Method of making alloy connections to semiconductor bodies |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE557842A (lt) * | 1956-06-01 | |||
DE1208412B (de) * | 1959-11-13 | 1966-01-05 | Siemens Ag | Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2603693A (en) * | 1950-10-10 | 1952-07-15 | Bell Telephone Labor Inc | Semiconductor signal translating device |
US2623102A (en) * | 1948-06-26 | 1952-12-23 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive materials |
US2689930A (en) * | 1952-12-30 | 1954-09-21 | Gen Electric | Semiconductor current control device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2561411A (en) * | 1950-03-08 | 1951-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating device |
-
0
- NL NL99247D patent/NL99247C/xx active
- NL NL193595D patent/NL193595A/xx unknown
- BE BE536150D patent/BE536150A/xx unknown
-
1954
- 1954-12-14 FR FR1115845D patent/FR1115845A/fr not_active Expired
-
1955
- 1955-01-15 DE DEW15753A patent/DE1033786B/de active Pending
- 1955-03-03 US US491908A patent/US2811682A/en not_active Expired - Lifetime
- 1955-03-04 CH CH337583D patent/CH337583A/fr unknown
- 1955-03-04 GB GB6456/55A patent/GB782664A/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2623102A (en) * | 1948-06-26 | 1952-12-23 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive materials |
US2603693A (en) * | 1950-10-10 | 1952-07-15 | Bell Telephone Labor Inc | Semiconductor signal translating device |
US2689930A (en) * | 1952-12-30 | 1954-09-21 | Gen Electric | Semiconductor current control device |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2959501A (en) * | 1956-05-15 | 1960-11-08 | Siemens Ag | Silicon semiconductor device and method of producing it |
US2931960A (en) * | 1957-01-29 | 1960-04-05 | Siemens Ag | Electric semiconductor p-nu junction devices and method of producing them |
US3120052A (en) * | 1957-03-20 | 1964-02-04 | Bosch Gmbh Robert | Method of making alloyed junction semiconductor devices |
US3051878A (en) * | 1957-05-02 | 1962-08-28 | Sarkes Tarzian | Semiconductor devices and method of manufacturing them |
US2962394A (en) * | 1957-06-20 | 1960-11-29 | Motorola Inc | Process for plating a silicon base semiconductive unit with nickel |
US2943268A (en) * | 1957-07-30 | 1960-06-28 | Texaco Inc | Automatic gain control amplifier circuit |
US3225438A (en) * | 1957-12-23 | 1965-12-28 | Hughes Aircraft Co | Method of making alloy connections to semiconductor bodies |
US3007092A (en) * | 1957-12-23 | 1961-10-31 | Hughes Aircraft Co | Semiconductor devices |
DE1104075B (de) * | 1958-05-14 | 1961-04-06 | Telefunken Gmbh | Halbleitergleichrichter, insbesondere Hochfrequenzgleichrichter, mit einer n np- bzw. p pn-Folge der Halbleiterzonen im Halbleiterkoerper und Verfahren zu seiner Herstellung |
US2952824A (en) * | 1958-06-18 | 1960-09-13 | Bell Telephone Labor Inc | Silicon alloy diode |
US3021595A (en) * | 1958-07-02 | 1962-02-20 | Texas Instruments Inc | Ohmic contacts for silicon conductor devices and method for making |
US2937963A (en) * | 1958-07-14 | 1960-05-24 | Int Rectifier Corp | Temperature compensating zener diode construction |
US3116442A (en) * | 1959-07-27 | 1963-12-31 | Link Belt Co | Silicon rectifier assembly comprising a heat conductive mounting base |
Also Published As
Publication number | Publication date |
---|---|
NL99247C (lt) | |
GB782664A (en) | 1957-09-11 |
FR1115845A (fr) | 1956-04-30 |
NL193595A (lt) | |
CH337583A (fr) | 1959-04-15 |
BE536150A (lt) | |
DE1033786B (de) | 1958-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2811682A (en) | Silicon power rectifier | |
US2705767A (en) | P-n junction transistor | |
US2689930A (en) | Semiconductor current control device | |
US2721965A (en) | Power transistor | |
US3727116A (en) | Integral thyristor-rectifier device | |
US2937324A (en) | Silicon carbide rectifier | |
US3244949A (en) | Voltage regulator | |
US2994018A (en) | Asymmetrically conductive device and method of making the same | |
US3280386A (en) | Semiconductor a.c. switch device | |
US3159780A (en) | Semiconductor bridge rectifier | |
US2757323A (en) | Full wave asymmetrical semi-conductor devices | |
US2776920A (en) | Germanium-zinc alloy semi-conductors | |
US3982269A (en) | Semiconductor devices and method, including TGZM, of making same | |
US3252003A (en) | Unipolar transistor | |
US3196329A (en) | Symmetrical switching diode | |
US3460009A (en) | Constant gain power transistor | |
US3470036A (en) | Rectifying semi-conductor body | |
US3105177A (en) | Semiconductive device utilizing quantum-mechanical tunneling | |
US2717343A (en) | P-n junction transistor | |
US3249764A (en) | Forward biased negative resistance semiconductor devices | |
US2793332A (en) | Semiconductor rectifying connections and methods | |
US3210563A (en) | Four-layer semiconductor switch with particular configuration exhibiting relatively high turn-off gain | |
US3519900A (en) | Temperature compensated reference diodes and methods for making same | |
US3284639A (en) | Semiconductor switch device of controlled rectifier type responsive to approximately equal gate signals of either polarity | |
US3201665A (en) | Solid state devices constructed from semiconductive whishers |