BE536150A - - Google Patents
Info
- Publication number
- BE536150A BE536150A BE536150DA BE536150A BE 536150 A BE536150 A BE 536150A BE 536150D A BE536150D A BE 536150DA BE 536150 A BE536150 A BE 536150A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Rectifiers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41427554A | 1954-03-05 | 1954-03-05 | |
US491908A US2811682A (en) | 1954-03-05 | 1955-03-03 | Silicon power rectifier |
Publications (1)
Publication Number | Publication Date |
---|---|
BE536150A true BE536150A (lt) |
Family
ID=27022485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE536150D BE536150A (lt) | 1954-03-05 |
Country Status (7)
Country | Link |
---|---|
US (1) | US2811682A (lt) |
BE (1) | BE536150A (lt) |
CH (1) | CH337583A (lt) |
DE (1) | DE1033786B (lt) |
FR (1) | FR1115845A (lt) |
GB (1) | GB782664A (lt) |
NL (2) | NL193595A (lt) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL216614A (lt) * | 1956-05-15 | |||
BE557842A (lt) * | 1956-06-01 | |||
NL224227A (lt) * | 1957-01-29 | |||
FR1192082A (fr) * | 1957-03-20 | 1959-10-23 | Bosch Gmbh Robert | Semi-conducteur de puissance |
US3051878A (en) * | 1957-05-02 | 1962-08-28 | Sarkes Tarzian | Semiconductor devices and method of manufacturing them |
US2962394A (en) * | 1957-06-20 | 1960-11-29 | Motorola Inc | Process for plating a silicon base semiconductive unit with nickel |
US2943268A (en) * | 1957-07-30 | 1960-06-28 | Texaco Inc | Automatic gain control amplifier circuit |
FR1214352A (fr) * | 1957-12-23 | 1960-04-08 | Hughes Aircraft Co | Dispositif semi-conducteur et procédé pour le fabriquer |
US3007092A (en) * | 1957-12-23 | 1961-10-31 | Hughes Aircraft Co | Semiconductor devices |
DE1104075B (de) * | 1958-05-14 | 1961-04-06 | Telefunken Gmbh | Halbleitergleichrichter, insbesondere Hochfrequenzgleichrichter, mit einer n np- bzw. p pn-Folge der Halbleiterzonen im Halbleiterkoerper und Verfahren zu seiner Herstellung |
NL239515A (lt) * | 1958-06-18 | |||
US3021595A (en) * | 1958-07-02 | 1962-02-20 | Texas Instruments Inc | Ohmic contacts for silicon conductor devices and method for making |
US2937963A (en) * | 1958-07-14 | 1960-05-24 | Int Rectifier Corp | Temperature compensating zener diode construction |
US3116442A (en) * | 1959-07-27 | 1963-12-31 | Link Belt Co | Silicon rectifier assembly comprising a heat conductive mounting base |
DE1208412B (de) * | 1959-11-13 | 1966-01-05 | Siemens Ag | Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL84061C (lt) * | 1948-06-26 | |||
US2561411A (en) * | 1950-03-08 | 1951-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating device |
BE506280A (lt) * | 1950-10-10 | |||
BE525428A (lt) * | 1952-12-30 |
-
0
- NL NL99247D patent/NL99247C/xx active
- NL NL193595D patent/NL193595A/xx unknown
- BE BE536150D patent/BE536150A/xx unknown
-
1954
- 1954-12-14 FR FR1115845D patent/FR1115845A/fr not_active Expired
-
1955
- 1955-01-15 DE DEW15753A patent/DE1033786B/de active Pending
- 1955-03-03 US US491908A patent/US2811682A/en not_active Expired - Lifetime
- 1955-03-04 CH CH337583D patent/CH337583A/fr unknown
- 1955-03-04 GB GB6456/55A patent/GB782664A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL99247C (lt) | |
GB782664A (en) | 1957-09-11 |
FR1115845A (fr) | 1956-04-30 |
US2811682A (en) | 1957-10-29 |
NL193595A (lt) | |
CH337583A (fr) | 1959-04-15 |
DE1033786B (de) | 1958-07-10 |