CH337583A - Elément redresseur - Google Patents

Elément redresseur

Info

Publication number
CH337583A
CH337583A CH337583DA CH337583A CH 337583 A CH337583 A CH 337583A CH 337583D A CH337583D A CH 337583DA CH 337583 A CH337583 A CH 337583A
Authority
CH
Switzerland
Prior art keywords
rectifying element
rectifying
Prior art date
Application number
Other languages
English (en)
French (fr)
Inventor
Leondus Pearson Gerald
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH337583A publication Critical patent/CH337583A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Rectifiers (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CH337583D 1954-03-05 1955-03-04 Elément redresseur CH337583A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41427554A 1954-03-05 1954-03-05
US491908A US2811682A (en) 1954-03-05 1955-03-03 Silicon power rectifier

Publications (1)

Publication Number Publication Date
CH337583A true CH337583A (fr) 1959-04-15

Family

ID=27022485

Family Applications (1)

Application Number Title Priority Date Filing Date
CH337583D CH337583A (fr) 1954-03-05 1955-03-04 Elément redresseur

Country Status (7)

Country Link
US (1) US2811682A (lt)
BE (1) BE536150A (lt)
CH (1) CH337583A (lt)
DE (1) DE1033786B (lt)
FR (1) FR1115845A (lt)
GB (1) GB782664A (lt)
NL (2) NL99247C (lt)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL112317C (lt) * 1956-05-15
BE557842A (lt) * 1956-06-01
NL224227A (lt) * 1957-01-29
FR1192082A (fr) * 1957-03-20 1959-10-23 Bosch Gmbh Robert Semi-conducteur de puissance
US3051878A (en) * 1957-05-02 1962-08-28 Sarkes Tarzian Semiconductor devices and method of manufacturing them
US2962394A (en) * 1957-06-20 1960-11-29 Motorola Inc Process for plating a silicon base semiconductive unit with nickel
US2943268A (en) * 1957-07-30 1960-06-28 Texaco Inc Automatic gain control amplifier circuit
FR1214352A (fr) * 1957-12-23 1960-04-08 Hughes Aircraft Co Dispositif semi-conducteur et procédé pour le fabriquer
US3007092A (en) * 1957-12-23 1961-10-31 Hughes Aircraft Co Semiconductor devices
DE1104075B (de) * 1958-05-14 1961-04-06 Telefunken Gmbh Halbleitergleichrichter, insbesondere Hochfrequenzgleichrichter, mit einer n np- bzw. p pn-Folge der Halbleiterzonen im Halbleiterkoerper und Verfahren zu seiner Herstellung
NL239515A (lt) * 1958-06-18
US3021595A (en) * 1958-07-02 1962-02-20 Texas Instruments Inc Ohmic contacts for silicon conductor devices and method for making
US2937963A (en) * 1958-07-14 1960-05-24 Int Rectifier Corp Temperature compensating zener diode construction
US3116442A (en) * 1959-07-27 1963-12-31 Link Belt Co Silicon rectifier assembly comprising a heat conductive mounting base
DE1208412B (de) * 1959-11-13 1966-01-05 Siemens Ag Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE489418A (lt) * 1948-06-26
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
BE506280A (lt) * 1950-10-10
BE525428A (lt) * 1952-12-30

Also Published As

Publication number Publication date
GB782664A (en) 1957-09-11
NL99247C (lt)
DE1033786B (de) 1958-07-10
US2811682A (en) 1957-10-29
FR1115845A (fr) 1956-04-30
NL193595A (lt)
BE536150A (lt)

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