US2637770A - Alloys and rectifiers made thereof - Google Patents

Alloys and rectifiers made thereof Download PDF

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Publication number
US2637770A
US2637770A US66946A US6694648A US2637770A US 2637770 A US2637770 A US 2637770A US 66946 A US66946 A US 66946A US 6694648 A US6694648 A US 6694648A US 2637770 A US2637770 A US 2637770A
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Prior art keywords
germanium
alloys
alloy
contact
semi
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US66946A
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English (en)
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Lark-Horovitz Karl
Randall M Whaley
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Purdue Research Foundation
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Purdue Research Foundation
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Priority to BE466591D priority Critical patent/BE466591A/xx
Priority claimed from US604744A external-priority patent/US2514879A/en
Priority to GB19884/46A priority patent/GB636248A/en
Priority to FR941699D priority patent/FR941699A/fr
Application filed by Purdue Research Foundation filed Critical Purdue Research Foundation
Priority to US66946A priority patent/US2637770A/en
Priority to US135746A priority patent/US2615966A/en
Priority to US135749A priority patent/US2745046A/en
Priority to US135747A priority patent/US2600997A/en
Priority to US135745A priority patent/US2588253A/en
Priority to US135748A priority patent/US2801376A/en
Priority to US136284A priority patent/US2691577A/en
Publication of US2637770A publication Critical patent/US2637770A/en
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B11/00—Obtaining noble metals
    • C22B11/10—Obtaining noble metals by amalgamating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Definitions

  • the present invention relates .to an improvement in alloys of germanium, and more particularly to rectiers ⁇ of electricity, which. oier low resistance to current flow in one direction .therethrough and high resistance to vcurrent flow in the opposite direction, made ⁇ of such alloys.
  • germanium alloys of our present invention may .be usedr as the semi-conductors for reetiers of the contact type, which, according voltages 'in the back or high ⁇ resistance'direction to one embodiment .of .our invention, possess @the following general .adyantages over known contact reotiers:
  • the germanium alloys herein disclosedV are all of the class of N -type semi-conductors, i. e., semiconductors which when made into contact type rectifiers present a high resistance to current flow across the rectifying contact when the semiconductor is positive and the contacting metal electrode or Whisker is negative, and a lower resistance when the potential is reversed.
  • Peak baclc uoZtage The voltage-current charteristics measured on rectiiiers using the alloys of our invention show a voltage peak in the back or high resistance direction. This peak generally occurs within a range greater than 10 Volts and approaching the order of 200 volts. It will also appear that all of these rectifiers using alloys of our invention exhibit a negative resistance region in the back direction for currents exceeding the current at the peak back voltage.
  • these rectiers have resistances ranging from the order of 10,000 ohms to several megohms as measured at about 5 volts. High resistances are substantially maintained nearly to the peak back voltage.
  • the N-type semi-conductors of our invention comprise germanium having small amounts of one of the following elements or certain combinations thereof alloyed therewith:
  • Chromium or uranium of column VI of the periodic table Chromium or uranium of column VI of the periodic table.
  • N-type semi-conductors of germanium may also be formed by alloying small amounts of, for example, phosphorus, arsenic, or antimony with germanium, but in rectiers using such semiconductors it has been found that excessive currents pass at voltages greater than about 3 to 10 of the volts in the back direction which permanently injure the rectifying contact. It will be understood therefore that our present invention only relates to semi-conductors of the N-type which exhibit high back voltage characteristics in excess of at least l volts, and does not concern all N-type semi-conductors consisting of an al loy of germanium, as for example, the group last referred to.
  • Figure 1 shows the voltage-current characteristic curves of several rectiers using certain of the alloys of our invention, which curves are not to be taken as typical of given alloys but merely to represent the type of characteristic exhibited by such alloys in general.
  • Figure 2 is a graph illustrating the electrical characteristics of rectiers using different types of surfaces on one alloy of our invention.
  • Figure 3 is a sectional view of a rectier, the semi-conductor of which comprises an alloy of our present invention.
  • Each alloy represented by the curves of Figure 1 is designated by a code number.
  • the latter part of each code denotes the amount in atomic percent of the particular element or elements added to germanium to produce that alloy. No atomic percentage figures for the addition of nitrogen to germanium are given since it is diilicult to determine accurately the amount or number of nitrogen atoms alloyed with the germanium.
  • each alloy may usually be found with electrical characteristics which lie toward the upper limit of the ranges above set out. However, as will later be discussed in more detail, some of the alloys are of greater uniformity than others with respect to rectification characteristics.
  • mosphere of nitrogen which may be either puried nitrogen or nitrogen direct from a comnitrogen at ⁇ pressures ranging from about'2 ⁇ mm. to '760 mm. -Hg at a temperature of 1000" to 1050 C. Groodv results appear pressurev and melts prepared within the above range of pressures were all satisfactory.
  • germanium ksuccessfully used for these/alloys hadV .purity approaching .100 .and electrical germanium which We have successfully alloyed with other elements to form .the alloys listed in phere of helium. Precaution should 'be taken to prevent 'the accidental .introductionof unknown from sources such as thecrucible or vlooa't'in which the Iingred nace itself, o'r some material volatilized in the sharpal cylinder.
  • melts ci germanium and Ythe added element or elements were heldin the molten 65 state long enough to allow mixing of the constituents, and it has been found thatabout 5 to minutes is suicient for this purpose.
  • Ni 1.25, .10, .50, L0, 1.0,1.0,1.0,1.0.. N2: solidified in N2 at pressures of 2. 18, G00, and 760 mm. Hg. Pd: .50, .50
  • Thegermanium alloys of our invention maybe allowed to mix, the melts were allowed to solidify prepared in all :cases except for'the'germaniumand 'cool which was accomplished ,either vby imnitrogen alloy, by melting lpure germanium' with mediately removing heat or by controlled Vcooling the desired alloying element or combination of apparatus.
  • theuniformityof the elements in eithera high vacuum of the order'of 75 melt is ⁇ aiected by the manner in which it is amounting to milligrams or about 0.8 atomic percent of tin.
  • the surfaces of these alloys are usually ground flat and then etched in a manner to be described in detail.
  • the etching of the alloy surfaces is not essential since, for example, by breaking open a melt, points may be found which exhibit the aforementioned electrical rectifying characteristics.
  • Such broken surfaces present geometrically irregular faces which introduce some difficulty in assembly of the rectiers. at and etching it appears to be the most feasible manner of producing the rectifiers in the commercial practicing of our invention.
  • germanium-tin alloys it is desirable in producing the melt that the boat or Crucible in which the elements are contained be gradually removed from the hot furnace region. This will produce more uniform alloys, particularly if the melt is so removed that the top region of the melt is the last part to cool. It appears that germanium becomes saturated at about 0.1 percent tin under the melting and cooling conditions used. However, in our experimental work larger amounts of tin were added in order to observe if such solubility depended upon the amount of tin available; more tin merely Thus, grinding the alloy surface l segregated. At 17 atomic percent addition of tin, the entire melt was interlaced with tin-rich veins which had metallic low resistance ohmic conductivity.
  • Whiskers made of the following metals have been tried and only Very slight deviations were noted over a large number of points of contact with the alloys of our invention: Mn, Pt, Ta, Ni, Fe, Zn, Mo, W, Au, Cu, Ag, Zr, Pt-Ir, and Pt-Ru. It appears therefore, that choice of a Whisker material may be determined on the basis of requirements other than the peak back voltage on rectiiiers using the alloys. These electrodes or whiskers may have Contact with the surfaces cf the alloys as formed upon solidification, or on surfaces exposed by breaking the melt. As mentioned above, however, it is desirable to grind and etch the surface.
  • the melts which usually were of pellet form 5 to 10 millimeters thick, may be cut into thin plates or slabs and a surface thereof ground with a suitable abrasive such as 600 m'esh alumina (A1203).
  • a suitable abrasive such as 600 m'esh alumina (A1203).
  • the abrasive used is not critical in that it has been found that other abrasives such as CrzOa, MgO, VazOs, SnOz, ZnO and 40 paper are equally satisfactory.
  • This may then be followed by a further grinding step with fine emery paper although this grinding step may be eliminated, if desired, without substantially altering the nal product.
  • the surface of the plate or slab is then etched with a suitable etching solution which in one modification of our invention has the following approximate composition:
  • Such a solution will satisfactorily etch the surface of the plates or slabs in about 1 to 2 minutes at room temperature and may be applied with either a swab or by immersing the surface in the solution.
  • This etching is not particularly critical but care should be taken not to unduly extend the etching since then a high polish is produced which may impair the performance of the alloy.
  • An' alternative modification' of an eiectrolytic etcliing solution may comprise 5" parts con'cen ⁇ - trated HNOaand 5o *parts H2O by 'voi'u me; Using i'flie alloy as the anode for 'about ⁇ minutes at l' to 2 volts willi resultin a satisfactory' etclti;
  • the curve identi# ieol'A byy reference numeral E illustrates theu elec'- trcal" cl'i'aracteristicJ of the gerrnaniumtin ⁇ alloy above identified in whiohtiie surface wasground1 with ⁇ - 600'" All'gGiry but-not etched.
  • Tirecurve indicated byt the'v4 reference numeral 2v illustratesVA the electricalf cha-racteri'sticsl which wereobtainedf'4 onay freshly broken surface of any alloy of thealcove ⁇ composition but' which surface has notbeen etched; ('urve-l member S'illustratesftlie-elieetrii call characteristic ot'a surface groundf-with ⁇ 600-L AilzGr and tli'en'A etched in accordanceV with trie-4 manner first described.
  • the curve indicated the reference' numeral 4f illustrates electrical" characteristics of' anotherl pointA on the alloy' afteretciiingl as descriledirr connection with curve-3; the-'curves' ti and representing the best and poorest performances; ree spectiveiyy ofthe particular' germanium tinalloy aboveA identified; afteretching; it' is tube olon serve-slthat inxv this ⁇ graph the voltagev scale in: the forward direct-ion i'sthere' expanded' by' a factor of' 10 asVv comparedy to the voltage" scale indicating'the high'V back voltage characteristics' ofr'the alloys' ⁇ of our invention: As indicated; the currents are given in milliamperes.
  • For'idirect-y current treatment in the forward direction such optimum current valuesrange from about 200 toV 800I mil-li-amperes;
  • One can apply such alternating current treatments imply by connecting the rectifier in serieswith acurrent limiting resistance and the secondary of a transformer. Dependingupomthecsizefof this current. limiting resistance,.values of.A 10 to 40 ohms have been.
  • Table III shows the permanent' effects'ofsuch ⁇ power;l treatmentv upon. ar. few. typicalV rectiers'v using'alloys ofl our invention ⁇ and prepared as describedi measured at abouti 425 volts.y
  • the nitrogen alloys can usually'be expected to have '70 to 90 percent of back peak voltages over 60 volts. Values on tin melts are more uniformly spread within the range of the limits given above. For the tin melts approximately of the points on the surfaces thereof will have voltages above volts. It appears that the pure germanium alloyed with tin or melted in an atmosphere of nitrogen represents the most advantageous alloy. Following them, alloys of pure germanium with calcium, strontium or nickel appear to be in order. It is to be understood, however, that one skilled in the art working Within the range of the alloys herein disclosed will readily be able to produce alloys having high back voltage and resistance characteristics and good forward conductances.
  • FIG. 3 of the drawings we have shown one type of rectifier in which our invention may be embodied.
  • a wafer 5 which may be of any of the germanium alloys above disclosed is mounted to have a low resistance non-rectifying Contact with a metal electrode member 6.
  • An electrode or whisker 'l is connected at one end to an electrode supporting member 8 with the end of the Whisker in contact with the surface of the germanium alloy wafer 5.
  • the standard 9 provides for mounting of the members supporting the wafer 5 and electrode or whisker 1 in insulated relation.
  • the rectifier contemplated by our invention may be of various forms, the only critical constructional feature being that the germanium alloy wafer comprising the semi-conductor, and the Whisker for contacting the surface of the wafer being arranged and supported so that one end of the Whisker engages the semi-conductor surface. It is understood that suitable leads are connected to the wafer or semi-conductor and to the Whisker or metal electrode so that the device may have application in any desired circuit for use in the rectication of current.
  • An electrical device comprising a, semi-conductor, a counter electrode having substantially point contact with said semi-conductor and a second electrode having an area of Contact with the said semi-conductor which is large compared to that of the counter electrode, said semi-conductor comprising an alloy of germanium having a purity of the order of 99% in combination with nitrogen to provide a device having a peak back voltage in the range in excess of 10 volts and approaching the order of 200 volts, said alloy being one as made by melting germanium having a purity of the order of 99% in an atmosphere of nitrogen at a pressure of about 2 mm. to '760 mm. Hg, at a temperature of about 1000 C.1050 C. for about 5 to 15 minutes.
  • the method of claim 2 comprising the additional step of etching a surface of the semi-conductor Wafer out from the ingot in a solution in approximately the portions of 4 parts by volume of hydroluoric acid (48% reagent), 4 parts by volume distilled water, 2 parts by volume concentrated nitric acid and 200 milligrams Cu(NO3)2 to each 10 cc. of solution for a time period in the general range between 1 and 2 minutes.
  • An electrical device comprising an alloy of germanium having a purity of the order of 99% and nitrogen, and a pair of electrode elements in contact with said formed alloy, one of said electrode elements having substantially point contact with the said semi-conductor and the second of said electrodes having an area of contact which is large compared to that of the point contact electrode, said alloy being one as made by melting said germanium in an atmosphere of nitrogen at a pressure of about 2 mm. to 760 mm. Hg, at a temperature of about 1000o C. to 1050 C. for about 5-15 minutes.
  • the method claimed in claim 2 comprising, in addition, securing an electrode element to one surface of the out Wafer, locating a second substantially point contact electrode upon a different surface of the cut Wafer and in substantially point contact therewith, and then applying electric power between the electrodes and the semiconductor.
  • the method set forth in claim 8 comprising, in addition, the steps of connecting the formed device in series with a current limiting resistance and a secondary of a transformer of alternating electric currents controlling the peak current in the forward direction to the order of ⁇ between 300 and 1000 milliamperes so that the voltage across the rectifier and limiting resistance is of the order of between 7 and 60 volts and the limiting resistance is of the order of 10 to 40 ohms and regulating the period of application of the alternating current to intervals varying between 1/4 and l second in time duration.
  • An electrical device comprising a semi-conductor, a counterelectrode having substantially point contact with said semi-conductor and a second electrode having an area of contact with said semi-conductor which is large compared to that of the counterelectrode, said semi-conductor consisting of an alloy of germanium of the order of 99% purity and nitrogen to produce a device having a peak back voltage in the range in excess of 10 volts and approaching the order of 200 volts, the back resistance of said formed device being of the order of between 10,000 ohms to several megohms at about volts and the forward current being in the range of between 5 and 40 milliamperes at one volt in the low resistance direction of current now through the device, and said alloy being one as made by melting said germanium in an atmosphere of nitrogen at a pressure of about 2 mm. to '760 mm. Hg, at a temperature of about 1000 C. to 1050o C. for about 5-15 minutes.
  • An electrical device comprising a body of germanium having a purity of the order of'- 99% in combination with nitrogen, and two electrodes in contact with said body, said body being an alloy as made by melting said germanium in an atmosphere of nitrogen at a pressure of about 2 mm. to 760 mm. of Hg, at a temperature of about 1000 C. to 1050o C. for about 5-15 minutes.
  • An electrical device comprising a body, a first conductor in contact with a part of said body, and a second conductor in contact with a 4different partA of said body, said body having at least a portion constituted of a germanium base alloy, said alloy having nitrogen as a minor constituent, and said germanium having a purity of the order of 99%, said alloy being one as made by melting said germanium in an atmosphere of nitrogen at a pressure of about 2 mm. to 760 mm. of Hg, at a temperature of about 1000" C. to 1050 C. for about 5-15 minutes.
  • An alloy of germanium and nitrogen as made by the process of melting germanium having a purity of the order of 99% in an atmosphere of nitrogen at a pressure of about 2 mm. to 7,60 mm. Hg, at a temperature of about 1000 C.- 1050 C. for about 5 to 15 minutes.

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US66946A 1945-07-13 1948-12-23 Alloys and rectifiers made thereof Expired - Lifetime US2637770A (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
BE466591D BE466591A (xx) 1945-07-13
GB19884/46A GB636248A (en) 1945-07-13 1946-07-03 Improvements in alloys and rectifiers made thereof
FR941699D FR941699A (fr) 1945-07-13 1946-07-11 Perfectionnements aux alliages de germanium et redresseurs utilisant ces alliages
US66946A US2637770A (en) 1945-07-13 1948-12-23 Alloys and rectifiers made thereof
US135747A US2600997A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135749A US2745046A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135746A US2615966A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135745A US2588253A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135748A US2801376A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US136284A US2691577A (en) 1945-07-13 1949-12-31 Alloys and rectifiers made thereof

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US604744A US2514879A (en) 1945-07-13 1945-07-13 Alloys and rectifiers made thereof
US66946A US2637770A (en) 1945-07-13 1948-12-23 Alloys and rectifiers made thereof
US135747A US2600997A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135749A US2745046A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135746A US2615966A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135745A US2588253A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135748A US2801376A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US136284A US2691577A (en) 1945-07-13 1949-12-31 Alloys and rectifiers made thereof

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US66946A Expired - Lifetime US2637770A (en) 1945-07-13 1948-12-23 Alloys and rectifiers made thereof
US135745A Expired - Lifetime US2588253A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135746A Expired - Lifetime US2615966A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135747A Expired - Lifetime US2600997A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135749A Expired - Lifetime US2745046A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135748A Expired - Lifetime US2801376A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US136284A Expired - Lifetime US2691577A (en) 1945-07-13 1949-12-31 Alloys and rectifiers made thereof

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US135746A Expired - Lifetime US2615966A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135747A Expired - Lifetime US2600997A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135749A Expired - Lifetime US2745046A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US135748A Expired - Lifetime US2801376A (en) 1945-07-13 1949-12-29 Alloys and rectifiers made thereof
US136284A Expired - Lifetime US2691577A (en) 1945-07-13 1949-12-31 Alloys and rectifiers made thereof

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US2940024A (en) * 1954-06-01 1960-06-07 Rca Corp Semi-conductor rectifiers
US2845373A (en) * 1954-06-01 1958-07-29 Rca Corp Semi-conductor devices and methods of making same
US2705192A (en) * 1954-06-04 1955-03-29 Westinghouse Electric Corp Etching solutions and process for etching members therewith
US2871377A (en) * 1954-07-29 1959-01-27 Gen Electric Bistable semiconductor devices
US2916458A (en) * 1954-11-12 1959-12-08 Aerojet General Co Pickling solution
US2809165A (en) * 1956-03-15 1957-10-08 Rca Corp Semi-conductor materials
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US2913357A (en) * 1956-09-20 1959-11-17 Union Carbide Corp Transistor and method of making a transistor
US2953529A (en) * 1957-04-01 1960-09-20 Rca Corp Semiconductive radiation-sensitive device
US3145328A (en) * 1957-04-29 1964-08-18 Raytheon Co Methods of preventing channel formation on semiconductive bodies
US2998572A (en) * 1958-08-01 1961-08-29 Sylvania Electric Prod Crystal amplifier
DE1112207B (de) * 1959-02-07 1961-08-03 Siemens Ag Verfahren zur Herstellung eines dotierten Bereiches in einer Halbleiteranordnung
US3193364A (en) * 1960-05-20 1965-07-06 American Optical Corp Method of making electronic devices
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US3146097A (en) * 1962-04-23 1964-08-25 Nat Res Corp Tin base alloys
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US3523222A (en) * 1966-09-15 1970-08-04 Texas Instruments Inc Semiconductive contacts
US3545967A (en) * 1966-09-28 1970-12-08 Aerojet General Co Metal-semiconductor alloys for thin-film resistors
US3930870A (en) * 1973-12-28 1976-01-06 International Business Machines Corporation Silicon polishing solution preparation
US4215577A (en) * 1978-08-28 1980-08-05 Purdue Research Foundation Utilization of diodes as wide range responsive thermometers
US4247579A (en) * 1979-11-30 1981-01-27 General Electric Company Method for metallizing a semiconductor element
US4697202A (en) * 1984-02-02 1987-09-29 Sri International Integrated circuit having dislocation free substrate
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US2447829A (en) * 1946-08-14 1948-08-24 Purdue Research Foundation Germanium-helium alloys and rectifiers made therefrom
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US2446467A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Dry plate rectifier
US2514879A (en) * 1945-07-13 1950-07-11 Purdue Research Foundation Alloys and rectifiers made thereof
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Cited By (9)

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US2766152A (en) * 1951-11-16 1956-10-09 Sylvania Electric Prod Method of producing germanium crystals
US2841860A (en) * 1952-08-08 1958-07-08 Sylvania Electric Prod Semiconductor devices and methods
US2836521A (en) * 1953-09-04 1958-05-27 Westinghouse Electric Corp Hook collector and method of producing same
DE1131808B (de) * 1956-05-21 1962-06-20 Ibm Deutschland Verfahren zum Herstellen von n-leitenden Halbleiterkoerpern von Transistoren od. dgl. aus Elementen der IV. Gruppe des Periodischen Systems, insbesondere Germanium oder Silizium
DE1160548B (de) * 1957-12-18 1964-01-02 Siemens Ag Verfahren zum Dotieren von halbleitendem Germanium oder Silizium mit Schwefel
DE1205197B (de) * 1958-02-28 1965-11-18 Westinghouse Electric Corp Anordnung zur Steuerung des Zuendkreises elektrischer Entladungsgefaesse mit Hilfe einer Schaltdiode
DE1107349B (de) * 1959-06-19 1961-05-25 Licentia Gmbh Steuerung fuer Stromrichter
DE1114949B (de) * 1959-08-27 1961-10-12 Siemens Ag Einrichtung zum Betrieb von einanodigen gittergesteuerten Entladungsgefaessen
US3181983A (en) * 1961-03-06 1965-05-04 Sperry Rand Corp Method for controlling the characteristic of a tunnel diode

Also Published As

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US2588253A (en) 1952-03-04
BE466591A (xx)
US2801376A (en) 1957-07-30
GB636248A (en) 1950-04-26
US2691577A (en) 1954-10-12
FR941699A (fr) 1949-01-18
US2600997A (en) 1952-06-17
US2745046A (en) 1956-05-08
US2615966A (en) 1952-10-28

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