US2496432A - Selenium rectifier - Google Patents
Selenium rectifier Download PDFInfo
- Publication number
- US2496432A US2496432A US671176A US67117646A US2496432A US 2496432 A US2496432 A US 2496432A US 671176 A US671176 A US 671176A US 67117646 A US67117646 A US 67117646A US 2496432 A US2496432 A US 2496432A
- Authority
- US
- United States
- Prior art keywords
- layer
- selenium
- counterelectrode
- magnesium
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C21/00—Digital stores in which the information circulates continuously
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
- H10D48/046—Provision of discrete insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/047—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates
Definitions
- My invention relates to selenium rectiers, and, in particular, relates to an improved method of rendering the junction between the selenium and the counterelectrode unilaterally conductive.
- a number of different procedures for improving the unilateral nature of the above-mentioned junction have been employed in the prior art, such procedures being commonly referred to as the production of the blocking layer at the selenium surface.
- One object of my invention is, accordingly, to provide an improved type of selenium rectifier.
- ⁇ Another object of my invention is to provide an improved type of blocking layer for selenium rectiers.
- Still another object of my invention is to produce a blocking layer for selenium rectifiers, which is particularly effective in withstanding high inverse voltages.
- a suitable form in which the principles of my invention may be embodied comprises a base plate I which may be of steel, and which is preferably nickel-plated and sand-blasted on the surface.
- a layer 2 of selenium which may be applied by dipping the plate I in a molten bath of selenium, and thereafter rotating the plate on a suitable spindle, or .other device, to throw off the excess of selenium, while molten, by centrifugal force.
- the free surface of the selenium is then coated, in accordance with my invention, with a thin film 3 of one of the following metals: germanium, silicon, magnesium, aluminum, cerium, berryllium, indium.
- This thin 1ayer of one of the above metals may, for example, be applied by vaporizing the metal and condensing it in an evacuated container.
- the nlm is preferably made thin enough to permit diiusion through it by the materials of a counterelectrode l which is subsequently applied by metal spraying cadmium. or an alloy ot cadmium and tin.
- the thickness of the above-mentioned thin nlm of metal may be about one micron.
- the unit After deposition of the counterelectrode I, the unit is heat-treated at a temperature of about 200 C. for a period of about 2 hours. The unit may then be electrically formed by impressing,
- the element is suitable for use in any of the standard connections of rectifier units well-known in the art.
- the method of improving the unilaterallyconductive properties of the junction between the selenium and the counterelectrode in a selenium rectifier which comprises superposing a thin layer of metal selected from the group consisting of magnesium, aluminum and beryllium on the surface of the selenium and superposing on said layer a counterelectrode containing cadmium.
- the method of producing a conducting element for electric circuits which comprises coating a base plate of metal with a layer of selenium, coating the free surface of the selenium with a thin layer of one or more metals selected from the group consisting of magnesium, aluminum and berryllium; depositing a layercontaining cadmium on the free surface of said layer, and heat-treating the unit thus formed.
- An electric circuit element comprising a base plate having a layer of selenium deposited on a portion of its surface, a thin layer of one or more metals selected from the group consisting of magnesium, aluminum and beryllium and a counterelectrode containing cadmium superposed on the free surface of the last-mentioned layer.
- An electric circuit element comprising a base plate --having a layer of selenium deposited on a portion of its surface, a layer of one or more metals selected from the group consisting of magnesium, aluminum and beryllium and a counterelectrode containing cadmium superposed on the free'surface of the last-mentioned layer, said layer being thin enough to permit diffusion through it by materials from said counterelectrode.
Landscapes
- Silicon Compounds (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE473354D BE473354A (en)) | 1946-05-21 | ||
US671176A US2496432A (en) | 1946-05-21 | 1946-05-21 | Selenium rectifier |
FR946245D FR946245A (fr) | 1946-05-21 | 1947-04-26 | Systèmes répétiteurs d'impulsions électriques |
FR946425D FR946425A (fr) | 1946-05-21 | 1947-05-08 | Redresseurs au sélénium |
GB13525/47A GB623857A (en) | 1946-05-21 | 1947-05-20 | Improvements in or relating to selenium rectifiers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US671176A US2496432A (en) | 1946-05-21 | 1946-05-21 | Selenium rectifier |
Publications (1)
Publication Number | Publication Date |
---|---|
US2496432A true US2496432A (en) | 1950-02-07 |
Family
ID=24693428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US671176A Expired - Lifetime US2496432A (en) | 1946-05-21 | 1946-05-21 | Selenium rectifier |
Country Status (4)
Country | Link |
---|---|
US (1) | US2496432A (en)) |
BE (1) | BE473354A (en)) |
FR (2) | FR946245A (en)) |
GB (1) | GB623857A (en)) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2650258A (en) * | 1951-06-12 | 1953-08-25 | Rca Corp | Semiconductor photosensitive device |
US2669663A (en) * | 1951-11-30 | 1954-02-16 | Rca Corp | Semiconductor photoconducting device |
US2701326A (en) * | 1949-11-30 | 1955-02-01 | Bell Telephone Labor Inc | Semiconductor translating device |
US2733390A (en) * | 1952-06-25 | 1956-01-31 | scanlon | |
DE952655C (de) * | 1953-03-06 | 1956-11-22 | Standard Elektrik Ag | Verfahren zur Herstellung von gut formierbaren Selengleichrichterplatten mit niedriger Schleusenspannung |
US2787745A (en) * | 1951-12-20 | 1957-04-02 | Int Standard Electric Corp | Counter electrode for dry disk type rectifiers |
US2804580A (en) * | 1953-08-13 | 1957-08-27 | Visseaux S A J | Unidirectionally conducting elements |
DE1025527B (de) * | 1954-11-29 | 1958-03-06 | Standard Elektrik Ag | Selengleichrichter mit leitfaehigkeitserhoehenden Zusaetzen in der Selenschicht |
US2858239A (en) * | 1956-03-13 | 1958-10-28 | Siemens Ag | Method for producing selenium rectifiers |
DE973817C (de) * | 1951-03-05 | 1960-06-15 | Licentia Gmbh | Verfahren zur Herstellung eines Trockengleichrichters |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2096170A (en) * | 1933-04-06 | 1937-10-19 | Int Standard Electric Corp | Light-sensitive device |
US2361157A (en) * | 1942-03-17 | 1944-10-24 | Union Switch & Signal Co | Alternating electric current rectifier of the selenium type |
US2380880A (en) * | 1942-10-19 | 1945-07-31 | Union Switch & Signal Co | Alternating electric current rectifier of the selenium type |
-
0
- BE BE473354D patent/BE473354A/xx unknown
-
1946
- 1946-05-21 US US671176A patent/US2496432A/en not_active Expired - Lifetime
-
1947
- 1947-04-26 FR FR946245D patent/FR946245A/fr not_active Expired
- 1947-05-08 FR FR946425D patent/FR946425A/fr not_active Expired
- 1947-05-20 GB GB13525/47A patent/GB623857A/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2096170A (en) * | 1933-04-06 | 1937-10-19 | Int Standard Electric Corp | Light-sensitive device |
US2361157A (en) * | 1942-03-17 | 1944-10-24 | Union Switch & Signal Co | Alternating electric current rectifier of the selenium type |
US2380880A (en) * | 1942-10-19 | 1945-07-31 | Union Switch & Signal Co | Alternating electric current rectifier of the selenium type |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2701326A (en) * | 1949-11-30 | 1955-02-01 | Bell Telephone Labor Inc | Semiconductor translating device |
DE973817C (de) * | 1951-03-05 | 1960-06-15 | Licentia Gmbh | Verfahren zur Herstellung eines Trockengleichrichters |
US2650258A (en) * | 1951-06-12 | 1953-08-25 | Rca Corp | Semiconductor photosensitive device |
US2669663A (en) * | 1951-11-30 | 1954-02-16 | Rca Corp | Semiconductor photoconducting device |
US2787745A (en) * | 1951-12-20 | 1957-04-02 | Int Standard Electric Corp | Counter electrode for dry disk type rectifiers |
DE975845C (de) * | 1951-12-20 | 1962-10-25 | Standard Elek K Lorenz Ag | Verfahren zur Herstellung von Selengleichrichterplatten mit mehrschichtiger Deckelektrode |
US2733390A (en) * | 1952-06-25 | 1956-01-31 | scanlon | |
DE952655C (de) * | 1953-03-06 | 1956-11-22 | Standard Elektrik Ag | Verfahren zur Herstellung von gut formierbaren Selengleichrichterplatten mit niedriger Schleusenspannung |
US2804580A (en) * | 1953-08-13 | 1957-08-27 | Visseaux S A J | Unidirectionally conducting elements |
DE1025527B (de) * | 1954-11-29 | 1958-03-06 | Standard Elektrik Ag | Selengleichrichter mit leitfaehigkeitserhoehenden Zusaetzen in der Selenschicht |
US2858239A (en) * | 1956-03-13 | 1958-10-28 | Siemens Ag | Method for producing selenium rectifiers |
Also Published As
Publication number | Publication date |
---|---|
BE473354A (en)) | |
FR946245A (fr) | 1949-05-27 |
FR946425A (fr) | 1949-06-02 |
GB623857A (en) | 1949-05-24 |
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