US2380880A - Alternating electric current rectifier of the selenium type - Google Patents

Alternating electric current rectifier of the selenium type Download PDF

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Publication number
US2380880A
US2380880A US518886A US51888644A US2380880A US 2380880 A US2380880 A US 2380880A US 518886 A US518886 A US 518886A US 51888644 A US51888644 A US 51888644A US 2380880 A US2380880 A US 2380880A
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US
United States
Prior art keywords
electric current
alternating electric
current rectifier
selenium
selenium type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US518886A
Inventor
Thompson Leslie Ernest
Jenkins Alexander
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Rail STS USA Inc
Original Assignee
Union Switch and Signal Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Switch and Signal Inc filed Critical Union Switch and Signal Inc
Application granted granted Critical
Publication of US2380880A publication Critical patent/US2380880A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate

Definitions

  • a rectifier embodying the invention is found to possess important advantages, in particular the rectification ratio has a satisfactorily high value while the so-called. bottom-bend" characteristlc is relatively low.
  • the counter-electrode may be constituted by a layer 2 cum. (cl. ins-see)
  • the coimter-electrode may however, be formed in other ways for example by sprayins, volatilisins or sputtering.
  • An alternating electric current rectifier oi the selenium type described provided with a counof metallic indium applied to the selenium layer under considerable pressure.
  • the suriace oi the metal must however, be as clean and iresh as possible and should preferably be cleaned in any suitable manner before being applied to the selenium layer.
  • ter-electrode composed of indium, tor the purpose specified.
  • a rectifier comprising a base plate provided with a layer of selenium, and a counter-electrode composed oi a layer oi indium applied to the selenium layer under considerable preuure.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Detergent Compositions (AREA)
  • Light Receiving Elements (AREA)

Description

Patented July 31, '1945 UNITED STATES PATENT OFFICE ALTEBNATING ELECTRIC CURRENT RECTI- FIER OF THE SELENIUII ma Leslie Ernest Thompson and Alexander Jenkins, King's CroI, London, England, In, by meme assignments, to The Union Switch Mid Signal Company; Bwlaavale,
lvania oirennsy l'a., a corporation No Application January 19,1044, Se-
rial No. 518,888. In Great Britain October 19.
mainly of indium instead of the metals or alloys hitherto utilized.
A rectifier embodying the invention is found to possess important advantages, in particular the rectification ratio has a satisfactorily high value while the so-called. bottom-bend" characteristlc is relatively low.
In carrying the invention into practice, the counter-electrode may be constituted by a layer 2 cum. (cl. ins-see) The coimter-electrode may however, be formed in other ways for example by sprayins, volatilisins or sputtering.
The favourable characteristics of the improved rectifier above indicated may be still further increased by the addition oi relatively small quantitles of other metals or substances to the indium so that the counter-electrode is composed. for
. example, of an indium alloy or mixture containing however a preponderating proportion 0! indium and the invention may be varied in this and other respects without exceeding its scope.
Having now described our invention. what we claim as new and desire to secure by Letters Patent is: p V
1. An alternating electric current rectifier oi the selenium type described provided with a counof metallic indium applied to the selenium layer under considerable pressure. The suriace oi the metal must however, be as clean and iresh as possible and should preferably be cleaned in any suitable manner before being applied to the selenium layer.
ter-electrode composed of indium, tor the purpose specified.
,2. A rectifier comprising a base plate provided with a layer of selenium, and a counter-electrode composed oi a layer oi indium applied to the selenium layer under considerable preuure.
1m ERNEST THOMPSON. ALEXANDER JENKINS.
US518886A 1942-10-19 1944-01-19 Alternating electric current rectifier of the selenium type Expired - Lifetime US2380880A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB14611/42A GB560869A (en) 1942-10-19 1942-10-19 Improvements relating to alternating electric current rectifiers of the selenium type

Publications (1)

Publication Number Publication Date
US2380880A true US2380880A (en) 1945-07-31

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ID=10044356

Family Applications (1)

Application Number Title Priority Date Filing Date
US518886A Expired - Lifetime US2380880A (en) 1942-10-19 1944-01-19 Alternating electric current rectifier of the selenium type

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US (1) US2380880A (en)
FR (1) FR932749A (en)
GB (1) GB560869A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2458013A (en) * 1944-03-04 1949-01-04 Asea Ab Selenium rectifier element and method of manufacturing same
US2496432A (en) * 1946-05-21 1950-02-07 Westinghouse Electric Corp Selenium rectifier
US2647226A (en) * 1947-09-20 1953-07-28 Asea Ab Dry rectifier valve plate
US2733390A (en) * 1952-06-25 1956-01-31 scanlon
US2762953A (en) * 1951-05-15 1956-09-11 Sylvania Electric Prod Contact rectifiers and methods
US2907935A (en) * 1955-02-26 1959-10-06 Siemens Ag Junction-type semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2458013A (en) * 1944-03-04 1949-01-04 Asea Ab Selenium rectifier element and method of manufacturing same
US2496432A (en) * 1946-05-21 1950-02-07 Westinghouse Electric Corp Selenium rectifier
US2647226A (en) * 1947-09-20 1953-07-28 Asea Ab Dry rectifier valve plate
US2762953A (en) * 1951-05-15 1956-09-11 Sylvania Electric Prod Contact rectifiers and methods
US2733390A (en) * 1952-06-25 1956-01-31 scanlon
US2907935A (en) * 1955-02-26 1959-10-06 Siemens Ag Junction-type semiconductor device

Also Published As

Publication number Publication date
GB560869A (en) 1944-04-25
FR932749A (en) 1948-03-31

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