US2479301A - Selenium rectifier - Google Patents

Selenium rectifier Download PDF

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Publication number
US2479301A
US2479301A US788948A US78894847A US2479301A US 2479301 A US2479301 A US 2479301A US 788948 A US788948 A US 788948A US 78894847 A US78894847 A US 78894847A US 2479301 A US2479301 A US 2479301A
Authority
US
United States
Prior art keywords
thallous
layer
seienium
selenium
rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US788948A
Other languages
English (en)
Inventor
Wayne E Blackburn
Alberto R Apodaca
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE485774D priority Critical patent/BE485774A/xx
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to US788948A priority patent/US2479301A/en
Priority to GB29241/48A priority patent/GB648038A/en
Priority to FR975527D priority patent/FR975527A/fr
Application granted granted Critical
Publication of US2479301A publication Critical patent/US2479301A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/101—Application of the selenium or tellurium to the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers

Definitions

  • Our invention relates to dry-contact rectiflers or light-sensitive devices and particularly to devices of this type which employ a layer of selemum.
  • One object of our invention is to provide a selenum rectifier or light-sensitive device in which the surface of the seienium at which the rectificaton or photo-electric eflect is produced is provided with -a boundary layer which insures a high resistance to current flow in the nominally non-conductive direction when an alternating voltage is impressed upon it.
  • a boundary layer which insures a high resistance to current flow in the nominally non-conductive direction when an alternating voltage is impressed upon it.
  • a blocking layer may be referred to as a blocking layer.
  • Another object of our inventiou is to produce v on a selenium layer a blocking layer which has a high resistance to current flow in the nominally non-conductive direction but which does not introduce a high resistance to current flow in the nominally conductive direction.
  • Another object of our invention is to provide a seienium layer with a blocking layer which shall not undergo such chemical reaction during the practical use of the device incorporating it that the latter will change its electrical characteristics, or as it is sometimes termed will "ag at a deleterious rate in service.
  • the rectifler comprises a base-plate I which may comprise steel which has first been sand-blasted on the surface 'and thereaiter nickel-plated.
  • the plate I thus prepared is preferably provided with a central hole 2 by which it may be mounted upon a spindle provided with means for rapidly rotating it.
  • the plate and spindle while in rotation are dipped into molten seienium and then withdrawn therefrom.
  • the centrifugal force removes all of the seienium except a thin uniform layer 3 from the surface of the plate.
  • the coated base plate is then submerged in a .01 normal water solution of thallous hydroxide at about C.
  • the 'plates are removed in about 20 seconds and rinsed in distilled water at room temperature.
  • the method of producing an electrical surface element which comprises producing a surface of seienium and immersing it in a water solution of 0.01 normal concentration of thallous hydroxide at about 25 C.
  • An electrical circuit element comprising a base-plate having a portion of its surface coated with seienium, the surface of said seienium being coated with thallous selenid and the surface oi' said thallous selenide being provided with a cadmium counter-electrode.
  • a rectifler comprising a base-plate having a layer of selenium thereon which is provided with a coating of thallous selenide, the surface of said thallous selenide being provided with a cadnium contact layer.
US788948A 1947-11-29 1947-11-29 Selenium rectifier Expired - Lifetime US2479301A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
BE485774D BE485774A (de) 1947-11-29
US788948A US2479301A (en) 1947-11-29 1947-11-29 Selenium rectifier
GB29241/48A GB648038A (en) 1947-11-29 1948-11-10 Improvements in or relating to electrical circuit elements, such as dry-contact rectifiers or light-sensitive devices
FR975527D FR975527A (fr) 1947-11-29 1948-11-27 Redresseurs au sélénium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US788948A US2479301A (en) 1947-11-29 1947-11-29 Selenium rectifier

Publications (1)

Publication Number Publication Date
US2479301A true US2479301A (en) 1949-08-16

Family

ID=25146090

Family Applications (1)

Application Number Title Priority Date Filing Date
US788948A Expired - Lifetime US2479301A (en) 1947-11-29 1947-11-29 Selenium rectifier

Country Status (4)

Country Link
US (1) US2479301A (de)
BE (1) BE485774A (de)
FR (1) FR975527A (de)
GB (1) GB648038A (de)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2629039A (en) * 1950-06-07 1953-02-17 Weston Electrical Instr Corp Selenium cell and process for manufacturing the same
US2643277A (en) * 1949-09-16 1953-06-23 Erwin E Falkenthal Photovoltaic cell
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
US2858239A (en) * 1956-03-13 1958-10-28 Siemens Ag Method for producing selenium rectifiers
US2908592A (en) * 1939-01-22 1959-10-13 Int Standard Electric Corp Method of producing a selenium rectifier
DE973817C (de) * 1951-03-05 1960-06-15 Licentia Gmbh Verfahren zur Herstellung eines Trockengleichrichters
DE1101625B (de) * 1955-02-07 1961-03-09 Licentia Gmbh Verfahren zum Herstellen von Selengleichrichtern
DE1186555B (de) * 1962-04-07 1965-02-04 Licentia Gmbh Verfahren zur Herstellung von Selengleichrichtern mit hoher Sperrfaehigkeit
DE1206529B (de) * 1962-04-13 1965-12-09 Licentia Gmbh Verfahren zur Herstellung von Selengleichrichtern hoher Sperrfaehigkeit
DE1219591B (de) * 1962-04-07 1966-06-23 Licentia Gmbh Verfahren zum Aufbringen einer gleichmaesigen Thalliumselenidschicht auf die Selenschicht eines Gleichrichters
US3599058A (en) * 1968-04-26 1971-08-10 Siemens Ag Selenium rectifier plate for use as an overvoltage diverter

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2309558A (en) * 1996-01-26 1997-07-30 Ibm Load balancing across the processors of a server computer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2361157A (en) * 1942-03-17 1944-10-24 Union Switch & Signal Co Alternating electric current rectifier of the selenium type

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2361157A (en) * 1942-03-17 1944-10-24 Union Switch & Signal Co Alternating electric current rectifier of the selenium type

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2908592A (en) * 1939-01-22 1959-10-13 Int Standard Electric Corp Method of producing a selenium rectifier
US2643277A (en) * 1949-09-16 1953-06-23 Erwin E Falkenthal Photovoltaic cell
US2629039A (en) * 1950-06-07 1953-02-17 Weston Electrical Instr Corp Selenium cell and process for manufacturing the same
DE973817C (de) * 1951-03-05 1960-06-15 Licentia Gmbh Verfahren zur Herstellung eines Trockengleichrichters
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
DE1101625B (de) * 1955-02-07 1961-03-09 Licentia Gmbh Verfahren zum Herstellen von Selengleichrichtern
US2858239A (en) * 1956-03-13 1958-10-28 Siemens Ag Method for producing selenium rectifiers
DE1186555B (de) * 1962-04-07 1965-02-04 Licentia Gmbh Verfahren zur Herstellung von Selengleichrichtern mit hoher Sperrfaehigkeit
DE1219591B (de) * 1962-04-07 1966-06-23 Licentia Gmbh Verfahren zum Aufbringen einer gleichmaesigen Thalliumselenidschicht auf die Selenschicht eines Gleichrichters
DE1206529B (de) * 1962-04-13 1965-12-09 Licentia Gmbh Verfahren zur Herstellung von Selengleichrichtern hoher Sperrfaehigkeit
DE1280417B (de) * 1962-04-13 1968-10-17 Licentia Gmbh Verfahren zur Herstellung von Selengleichrichtern hoher Sperrfaehigkeit
US3599058A (en) * 1968-04-26 1971-08-10 Siemens Ag Selenium rectifier plate for use as an overvoltage diverter

Also Published As

Publication number Publication date
GB648038A (en) 1950-12-28
FR975527A (fr) 1951-03-06
BE485774A (de) 1900-01-01

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