US2447630A - Method of making selenium rectifiers - Google Patents
Method of making selenium rectifiers Download PDFInfo
- Publication number
- US2447630A US2447630A US509817A US50981743A US2447630A US 2447630 A US2447630 A US 2447630A US 509817 A US509817 A US 509817A US 50981743 A US50981743 A US 50981743A US 2447630 A US2447630 A US 2447630A
- Authority
- US
- United States
- Prior art keywords
- selenium
- layer
- coating
- making
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title description 69
- 229910052711 selenium Inorganic materials 0.000 title description 69
- 239000011669 selenium Substances 0.000 title description 69
- 238000004519 manufacturing process Methods 0.000 title description 14
- 238000000576 coating method Methods 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 20
- 238000000137 annealing Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 238000007598 dipping method Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005507 spraying Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
Definitions
- Another object of my invention is to provide a a metallic plate, which preferably is of iron, having va sandblasted surface which has subsequently been nickel-plated.
- the dipping process abovementioned can conveniently be carried out by mounting disks having central holes in spaced pairs upon a spindle, the latter being rotated, dipped into the selenium and then removed therefrom. The rotation of the disks ensures that centrifugal force will remove the excess of selenium, and leave a coating which is of substantially uniform thickness over the entire disk.
- I dissolve in the selenium about 0.1% by weight of the element bromine.
- the .method of making selenium devices which comprises the steps of coating a conductive surface with a layer of amorphous selenium; coating the free surface of this amorphous selenium layer with a conductive contact layer and thereafter annealing the selenium.
- the method of making selenium devices which comprises the steps of dipping a conductive surface into molten selenium, reducing the selenium layer to a substantially uniform thickness then coating the free surface of the selenium layer with a conductive contact layer and thereafter annealing the selenium.
- tive surface with a layer of amorphous selenium coating the outer surface of this amorphous selenium layer with a conductive contact layer and thereafter annealing the selenium for a period of the order of six hours at a temperature of the order of 170 C.
- the method of making selenium devices which comprises the steps of coating 8'. conductive surface with a layer of amorphous selenium; coating the outer surface of this amorphous selenium layer with a conductive contact layer and thereafter annealing the selenium at a temperature of the order of 170 C.
- the method of making selenium devices which comprises the steps of coating a conductive surface with a layer of amorphous selenium; coating the outer surface of this amorphous selenium layer with a conductive contact layer and thereafter annealing the selenium and applying an electrical forming-voltage to the selenium.
- the method of making selenium devices which comprises the steps of coating a conductive surface with.a layer of amorphous selenium; coating the-outer surface of this amorphous selenium layer with a conductive contact layer and thereafter annealing the selenium at a temperature of the order of 170 C. and applying an electrical forming-voltage to the selenium.
- the method of making units comprising a layer of selenium sandwiched between two layers of conducting material which comprises coating a conductive surface with amorphous selenium: coating the free surface of the amorphous selenium with a conductive material and thereafter annealing the selenium at a temperature of the order of 170 C. and applying a forming-voltage to the selenium.
- the method of making selenium rectiflers which comprises dipping a rotated metallic plate into molten selenium and withdrawing it therefrom, then spraying the free surface of the selenium with a metallic contact-layer and annealing the selenium thereafter at a temperature of the order of 170 C.
- the method of making selenium rectiflers which comprises dipping a rotated metallic plate into molten selenium and withdrawing it therefrom, then spraying the free surface of the selenium with a metallic contact-layer and anneal-' ing the selenium thereafter at a temperature of the order of 170 C. for a period of the order of six hours.
- the method of making selenium rectiflers which comprises dipping a rotated metallic plate into molten selenium and withdrawing it therefrom, then spraying the free surface of the selenium with a metallic contact-layer and annealing the selenium thereafter at a temperature of the order of 170 C. and thereafter electrically forming the selenium by subjecting it to a gradually increasing voltage.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
, Patented Aug. 24, 1948 or MAKING ssLaNmM.
asc'rmsas METHOD Wayne E. Blackburn, Wilkinsburg, Pa., assignor to Westinghouse Electric Corporation, East Pittsburgh, Pa., a corporation of Pennsylvania No Drawing.
Application November 10, 1948. Serial No. 509,817
12: Claims. (Cl. 175-388) My application relates to selenium rectiiiers and radiation sensitive devices and, in particular. relates to methods of producing selenium coatings which are free from microscopic cracks and holes for such rectifiers.
The process of making selenium devices which has been conventionalin the prior art has been to coata metal plate with selenium; then to heat it to a temperature of the order of 170 C. to change the selenium coating fromthe less conductive modification to the more conductive modification; and to thereafter apply a conductive metallic coating to the exterior face of the selenium layer. A considerable fraction of the elements :i'ormed by this process were found, upon subsequent test, to break down with the accompaniment of what might be termed a miniature explosion, leaving crater-like holes between the base plate and the conductive layer. While units which hadsuffered such breakdowns could be used subsequently for useful purposes, they \were always. liable to suffer subsequent breakdowns. and were by no means as reliable as units in which such breakdowns had not occurred.
Investigation of the nature of such breakdowns led to the. discovery that they were due to the existence of filaments or projections of the sprayed metal of the contact layer which had passed through small cracks and crevices produced in the selenium film by the annealing.
which shall be free from the above-described effects.
' my method, I dip into a bath of molten selenium Another object of my invention is to provide a a metallic plate, which preferably is of iron, having va sandblasted surface which has subsequently been nickel-plated. The dipping process abovementioned can conveniently be carried out by mounting disks having central holes in spaced pairs upon a spindle, the latter being rotated, dipped into the selenium and then removed therefrom. The rotation of the disks ensures that centrifugal force will remove the excess of selenium, and leave a coating which is of substantially uniform thickness over the entire disk. Preferably, I dissolve in the selenium about 0.1% by weight of the element bromine. Ithen allow the disks to cool to substantially room tempera ture and Schoop spray onto their surfaces a contact layer of pure cadmium. Thereafter. I anneal the units at substantially C. for at least six hours. After such annealing, I impress between the base plate and the contact layer of each unit a. direct-current voltage tending to cause electrons to flow from the selenium to the cadmium. when first applied, this voltage has a value of about 12 volts, and is gradually increased to 32 volts.
Selenium units made by the'foregoing method. in which the contact layer is applied to the selenium while the latter is in its nonconductive condition, I have found to be free from projections of the metallic contact layer through the selenium toward the metallic base plate: and the short circuits and production of miniature craters, which occur in a case of a considerable percentage of units formed by the prior art method of annealing the selenium before the contact layer is applied, are entirely absent.
I claim as my invention:
1. The .method of making selenium devices which comprises the steps of coating a conductive surface with a layer of amorphous selenium; coating the free surface of this amorphous selenium layer with a conductive contact layer and thereafter annealing the selenium.
2. The method of making selenium devices which comprises the steps of dipping a conductive surface into molten selenium, reducing the selenium layer to a substantially uniform thickness then coating the free surface of the selenium layer with a conductive contact layer and thereafter annealing the selenium.
3. The method of making selenium devices which comprises the steps of coating a conduc- 2,447,eao
tive surface with a layer of amorphous selenium: coating the outer surface of this amorphous selenium layer with a conductive contact layer and thereafter annealing the selenium for a period of the order of six hours at a temperature of the order of 170 C.
4. The method of making selenium devices which comprises the steps of coating 8'. conductive surface with a layer of amorphous selenium; coating the outer surface of this amorphous selenium layer with a conductive contact layer and thereafter annealing the selenium at a temperature of the order of 170 C.
5. The method of making selenium devices which comprises the steps of coating a conductive surface with a layer of amorphous selenium; coating the outer surface of this amorphous selenium layer with a conductive contact layer and thereafter annealing the selenium and applying an electrical forming-voltage to the selenium.
6. The method of making selenium devices which comprises the steps of coating a conductive surface with.a layer of amorphous selenium; coating the-outer surface of this amorphous selenium layer with a conductive contact layer and thereafter annealing the selenium at a temperature of the order of 170 C. and applying an electrical forming-voltage to the selenium.
7. The method of making units comprising a layer of selenium sandwiched between two layers of conducting material which comprises coating a conductive surface with amorphous selenium; coating the free surface of the amorphous selenium with a conductive material and thereafter annealing the selenium.
8. The method of making'units comprising a layer of selenium sandwiched between two layers of conducting material which comprises coating a conductive surface with amorphous selenium; coating the free surface of the amorphous selenium with a conductive material and thereafter annealing the selenium at a temperature of the order of 170 C.
9. The method of making units comprising a layer of selenium sandwiched between two layers of conducting material which comprises coating a conductive surface with amorphous selenium: coating the free surface of the amorphous selenium with a conductive material and thereafter annealing the selenium at a temperature of the order of 170 C. and applying a forming-voltage to the selenium.
10. The method of making selenium rectiflers which comprises dipping a rotated metallic plate into molten selenium and withdrawing it therefrom, then spraying the free surface of the selenium with a metallic contact-layer and annealing the selenium thereafter at a temperature of the order of 170 C.
11. The method of making selenium rectiflers which comprises dipping a rotated metallic plate into molten selenium and withdrawing it therefrom, then spraying the free surface of the selenium with a metallic contact-layer and anneal-' ing the selenium thereafter at a temperature of the order of 170 C. for a period of the order of six hours.
12; The method of making selenium rectiflers which comprises dipping a rotated metallic plate into molten selenium and withdrawing it therefrom, then spraying the free surface of the selenium with a metallic contact-layer and annealing the selenium thereafter at a temperature of the order of 170 C. and thereafter electrically forming the selenium by subjecting it to a gradually increasing voltage.
WAYNE E. BLACKBURN.
REFERENCES CITED The following references are of record in the file of this patent:
UNITED STATES PATENTS
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US509817A US2447630A (en) | 1943-11-10 | 1943-11-10 | Method of making selenium rectifiers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US509817A US2447630A (en) | 1943-11-10 | 1943-11-10 | Method of making selenium rectifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US2447630A true US2447630A (en) | 1948-08-24 |
Family
ID=24028189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US509817A Expired - Lifetime US2447630A (en) | 1943-11-10 | 1943-11-10 | Method of making selenium rectifiers |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US2447630A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2752542A (en) * | 1950-09-23 | 1956-06-26 | Siemens Ag | Dry-plate rectifier |
| US2894314A (en) * | 1954-05-12 | 1959-07-14 | Philips Corp | Method of making selenium rectifier |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1743160A (en) * | 1927-12-10 | 1930-01-14 | Suddeutsche Telefonapp Kabel U | Method of manufacturing alternating-current rectifiers |
| US1778645A (en) * | 1927-12-06 | 1930-10-14 | Suddeutsche Telefonapp Kabel U | Electrical alternating-current rectifier |
| US2227827A (en) * | 1938-09-21 | 1941-01-07 | Union Switch & Signal Co | Manufacture of devices presenting electrical asymmetric conductivity |
| US2246161A (en) * | 1938-06-14 | 1941-06-17 | Gen Electric | Selenium cells and method of producing the same |
| US2316905A (en) * | 1939-07-01 | 1943-04-20 | Westinghouse Electric & Mfg Co | Selenium rectifier |
-
1943
- 1943-11-10 US US509817A patent/US2447630A/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1778645A (en) * | 1927-12-06 | 1930-10-14 | Suddeutsche Telefonapp Kabel U | Electrical alternating-current rectifier |
| US1743160A (en) * | 1927-12-10 | 1930-01-14 | Suddeutsche Telefonapp Kabel U | Method of manufacturing alternating-current rectifiers |
| US2246161A (en) * | 1938-06-14 | 1941-06-17 | Gen Electric | Selenium cells and method of producing the same |
| US2227827A (en) * | 1938-09-21 | 1941-01-07 | Union Switch & Signal Co | Manufacture of devices presenting electrical asymmetric conductivity |
| US2316905A (en) * | 1939-07-01 | 1943-04-20 | Westinghouse Electric & Mfg Co | Selenium rectifier |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2752542A (en) * | 1950-09-23 | 1956-06-26 | Siemens Ag | Dry-plate rectifier |
| US2894314A (en) * | 1954-05-12 | 1959-07-14 | Philips Corp | Method of making selenium rectifier |
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