US2215999A - Selenium rectifier having an insulating layer - Google Patents

Selenium rectifier having an insulating layer Download PDF

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Publication number
US2215999A
US2215999A US144967A US14496737A US2215999A US 2215999 A US2215999 A US 2215999A US 144967 A US144967 A US 144967A US 14496737 A US14496737 A US 14496737A US 2215999 A US2215999 A US 2215999A
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US
United States
Prior art keywords
selenium
layer
semi
counter electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US144967A
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English (en)
Inventor
Brunke Fritz
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General Electric Co
Original Assignee
General Electric Co
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Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
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Publication of US2215999A publication Critical patent/US2215999A/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers

Definitions

  • My invention relates to dry plate rectifiers, and like devices such as light-sensitive cells, of the selenium type, and particularly to methods of treating selenium rectifier elements and the like whereby a more uniform product is obtained.
  • a base or carrier electrode of a suitable metal is coated with a semi-conductor layer formed of selenium or a selenium compound, and after proper heat treatment a counter electrode, functioning as a conductor of the current which flows through the semi-conductor layer and the bearer electrode,
  • the rectifier cell or element comprises a base or carrier electrode l, a semi-conductor layer 2 of selenium or selenium compound on the carrier electrode, and a counter electrode 3.
  • a thin layer l of an insulating material is appliedto the layer 2, or the layer l may be applied to the counter electrode 3 and the application of the counter electrode to 5 the semi-conductor layer 2 may then be made, in
  • the insulating layer is of such order of thickness as not to prevent proper flow of current through the rectifier cell.
  • the thickness is of the order of 10- cm. or in certain cases less than 10- cm.
  • the layer is preferably applied by exposing the semi-conductor layer 2 or the counter electrode 3 to a vapor of a metal to form a compound of selenium. I have found that by the vaporization method of applying the insulating layers the thickness thereof may be controlled with precision. The vapor of various metals may be employed in the above-described process.
  • a non-conducting modification of selenium such as the amorphous form of selenium or a non-conducting compound of selenium is a preferable material for the insulating layer.
  • Fig. 2 illustrates a rectifier cell in which the semi-conductor layer is of the conducting modification of sele nium as in Fig. 1, but the insulating layer, 5, is 25 formed of a non-conducting selenium such as the amorphous form or of a non-conducting selenium compound.
  • a dry plate element including a carrier electrode, a layer on said electrode composed of the conductive form of selenium, a counter electrode, and a layer of the non-conductive form of selenium on said counter electrode and in contact with said first-named layer.
  • a dry plate element including a carrier electrode, a layer on said electrode composed of the conductive form of selenium, a counter electrode, and a layer of the non-conductive form of selenium less than 10- cm. in thickness on said counter electrode and in contact with said firstnamed layer.
  • a dry plate element including a carrier electrode, a semi-conductor layer on said electrode composed of a material oi! the group comprising selenium and selenium compounds, 8. counter electrode, and a layer of insulating material on said counter electrode and in contact with said semi-conductor layer, said insulating material cpnsisting of the non-conducting form of selenium.
  • a dry plate element including a carrier electrode, a semi-conductor layer on said electrode composed of a material of the group comprising selenium and selenium compounds, a counter electrode, and a layer of insulating material less than 10- cm. in thickness on said counter electrode and in contact with said semi-conductor layer, said insulating material consisting of the non-conducting form of selenium.

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  • Physical Vapour Deposition (AREA)
  • Thermistors And Varistors (AREA)
US144967A 1936-06-13 1937-05-26 Selenium rectifier having an insulating layer Expired - Lifetime US2215999A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEA0005604 1936-06-13

Publications (1)

Publication Number Publication Date
US2215999A true US2215999A (en) 1940-09-24

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ID=6920782

Family Applications (1)

Application Number Title Priority Date Filing Date
US144967A Expired - Lifetime US2215999A (en) 1936-06-13 1937-05-26 Selenium rectifier having an insulating layer

Country Status (4)

Country Link
US (1) US2215999A (en:Method)
CH (1) CH203247A (en:Method)
GB (1) GB498673A (en:Method)
NL (1) NL46219C (en:Method)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2444430A (en) * 1943-07-13 1948-07-06 Fed Telephone & Radio Corp Metal rectifier element
US2457169A (en) * 1945-03-12 1948-12-28 Standard Telephones Cables Ltd Method of manufacturing of rectifier elements
US2465768A (en) * 1941-06-26 1949-03-29 Hartford Nat Bank & Trust Co Blocking-layer cell
US2481739A (en) * 1946-02-23 1949-09-13 Radio Receptor Company Inc Rectifiers
US2554237A (en) * 1945-10-29 1951-05-22 Westinghouse Electric Corp Rectifier
US2634322A (en) * 1949-07-16 1953-04-07 Rca Corp Contact for semiconductor devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2465768A (en) * 1941-06-26 1949-03-29 Hartford Nat Bank & Trust Co Blocking-layer cell
US2444430A (en) * 1943-07-13 1948-07-06 Fed Telephone & Radio Corp Metal rectifier element
US2457169A (en) * 1945-03-12 1948-12-28 Standard Telephones Cables Ltd Method of manufacturing of rectifier elements
US2554237A (en) * 1945-10-29 1951-05-22 Westinghouse Electric Corp Rectifier
US2481739A (en) * 1946-02-23 1949-09-13 Radio Receptor Company Inc Rectifiers
US2634322A (en) * 1949-07-16 1953-04-07 Rca Corp Contact for semiconductor devices

Also Published As

Publication number Publication date
GB498673A (en) 1939-01-11
CH203247A (de) 1939-02-28
NL46219C (en:Method)

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