US2131167A - Asymmetric electrode system - Google Patents

Asymmetric electrode system Download PDF

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Publication number
US2131167A
US2131167A US111866A US11186636A US2131167A US 2131167 A US2131167 A US 2131167A US 111866 A US111866 A US 111866A US 11186636 A US11186636 A US 11186636A US 2131167 A US2131167 A US 2131167A
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United States
Prior art keywords
selenium
layer
electrode system
amalgam
base
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Expired - Lifetime
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US111866A
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English (en)
Inventor
Boer Jan Hendrik De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
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Philips Gloeilampenfabrieken NV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate

Definitions

  • This invention relates to electrode systems with unsymmetrical conductivity such as are used, for instance, in rectlfiers and photoelectric cells, wherein one of the electrodes consists for the greater part of selenium which is bounded by an insulating coating on one side.
  • the semiconductor selenium constitutes one of the electrodes
  • it is very dimcult to provide the selenium on a support in such a manner that-it firmly adheres to the material of the support. Difllculties'are involved, among other things, in ensuring an intimate contact, since the selenium, which is usually applied in the liquid state, has the property of contracting to a drop.
  • these difliculties above are avoided by applying the selenium n a layer of amalgam preferably obtained by making the support from'any metal that can be amalgamated and amalgamatingit at least on' the side where this metal contacts with the selenium.
  • the support is made from amalgamated brass.
  • the support may advantageously consist of copper and also of aluminum. Since copper is an excellent thermal conductor a rectifier can be built in this case without separate plates for thermal radiation being necessary which are very cumbersome and by which the weight would be greatly increased. This is more particularly of. importance in rectifiers for high powers.
  • Aluminum has the advantage that when the support is made therefrom the aggregate is very light and in addition it allows of easily carrying off heat, so that in a high tension rectifier, for instance, which must consequently consist of a large number of series-connected units, a considerable saving in weight is ensured.
  • an amalgam layer 2 is formed on to which molten selenium is applied which is painted out and smoothly rolled down to a thickness of 0.1 mm.
  • this selenium may be mixed with other substances, for instance 2% of mercuric chloride (HgCl-z) or about 2% of calcium tungstate (CaWo4)
  • HgCl-z mercuric chloride
  • CaWo4 calcium tungstate
  • the selenium layer 3 is converted into'the conductive crystalline modification by heating to about 200 C. for about 24 hours.
  • the insulating coating 4 of polystyrene which may be efiected with the aid of a solution of polystyrene in benzene. After that the assembly is heated again to about 200 C. for some hours, in order that the benzene shall be completely vaporized and the polystyrene thoroughly polymerized, thus increasing the density of this-,material and improving its favorable dielectric properties.
  • an electro-positive electrode 5 constituted by a layer of Woods metal is provided in the liquid state.
  • the polystyrene serves at the same time as an adhesive for Woods metal.
  • a connecting wire 6 which may be effected by soldering.
  • the heating times referred .to in this example may be very difierent, for instance, in accordance with the substances -added to the selenium.
  • An electrode system of unsymmetrical conductivity including any metal base which can be amalgamated and a layer of selenium on said base and an amalgam layer of said metal base between said base and said layer of selenium.
  • An electrode system of unsymmetrical conductivity including any metal base which can be amalgamated, a layer of amalgam of said metal base on said metal base, a layer of selenium on said amalgam, and an insulating coating on said selenium.
  • An electrode system 01. unsymmetrical conductivity including a brass base, an amalgam layer of brass on said base, a selenium layer on said amalgam layer, and an insulating coating on said selenium.
  • An electrode system of unsymmetrical conductivity including a copper base,,an amalgam layer of copper on-said base, a selenium layer on said amalgam layer, and an insulating coating on said selenium.
  • An electrode system of unsymmetrical conductivity including an aluminum base, an amalgam layer of aluminum on said base, a selenium layer on said amalgam layer, and an insulating coating on said selenium.
  • An electrode system of unsymmetrical conductivity including any metal base which can be amalgamated, an amalgam layer of said metal base on said base. a layer of selenium on said.
  • amalgam and an insulating coating on said selenium, and an electrode on said insulating coating.
  • JAN 'HENDRIK a BOER.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cell Electrode Carriers And Collectors (AREA)
  • Battery Electrode And Active Subsutance (AREA)
US111866A 1935-11-22 1936-11-20 Asymmetric electrode system Expired - Lifetime US2131167A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE464268X 1935-11-22

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US2131167A true US2131167A (en) 1938-09-27

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US111866A Expired - Lifetime US2131167A (en) 1935-11-22 1936-11-20 Asymmetric electrode system

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US (1) US2131167A (fr)
FR (1) FR813780A (fr)
GB (1) GB464268A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2419602A (en) * 1943-08-14 1947-04-29 Standard Telephones Cables Ltd Rectifier and method of making the same
US2510361A (en) * 1944-04-06 1950-06-06 Hartford Nat Bank & Trust Co Method of producing selenium rectifiers
CN115067063A (zh) * 2021-03-10 2022-09-20 创科无线普通合伙 割草机

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE961733C (de) * 1939-01-17 1957-04-11 Aeg Verfahren zum Herstellen elektrisch unsymmetrisch leitender Elemente mit einem Halbleiter wie Selen
DE887846C (de) * 1948-10-02 1953-08-27 Siemens Ag Quecksilberfester Selengleichrichter

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2419602A (en) * 1943-08-14 1947-04-29 Standard Telephones Cables Ltd Rectifier and method of making the same
US2510361A (en) * 1944-04-06 1950-06-06 Hartford Nat Bank & Trust Co Method of producing selenium rectifiers
CN115067063A (zh) * 2021-03-10 2022-09-20 创科无线普通合伙 割草机
CN115067063B (zh) * 2021-03-10 2024-04-12 创科无线普通合伙 割草机

Also Published As

Publication number Publication date
GB464268A (en) 1937-04-14
FR813780A (fr) 1937-06-08

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