US20250006876A1 - Light emitting device and electronic device - Google Patents

Light emitting device and electronic device Download PDF

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Publication number
US20250006876A1
US20250006876A1 US18/697,810 US202218697810A US2025006876A1 US 20250006876 A1 US20250006876 A1 US 20250006876A1 US 202218697810 A US202218697810 A US 202218697810A US 2025006876 A1 US2025006876 A1 US 2025006876A1
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light emitting
light
protective film
electrode
subpixel
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Masaya Ogura
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H01L33/58—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/302—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements characterised by the form or geometrical disposition of the individual elements
    • H01L25/0753—
    • H01L33/42—
    • H01L33/505—
    • H01L33/62—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • the present disclosure relates to a light emitting device and an electronic device.
  • the display device includes, for example, a plurality of pixels including a lower electrode, a light emitting layer laminated on the lower electrode, and an upper electrode laminated on the light emitting layer. Then, when a predetermined voltage is supplied to the lower electrode and the upper electrode, the light emitting layer sandwiched between the lower electrode and the upper electrode emits light.
  • the present disclosure proposes a light emitting device and an electronic device capable of improving light extraction efficiency.
  • a light emitting device including a plurality of pixels arranged on a substrate.
  • a pixel of the plurality of pixels includes a plurality of subpixels, at least one subpixel of the plurality of subpixels includes a plurality of light emitting elements, each light emitting element includes: a first electrode provided on the substrate; a light emitting layer that is laminated on the first electrode and emits light; a second electrode that is laminated on the light emitting layer and transmits light from the light emitting layer; and a first protective film that is laminated on the second electrode and transmits light from the light emitting layer, and a second protective film constituting an interface for guiding the light immediately above the light emitting element is embedded between the light emitting elements adjacent.
  • an electronic device on which a light emitting device including a plurality of pixels arranged on a substrate is mounted.
  • a pixel of the plurality of pixels includes a plurality of subpixels, at least one subpixel of the plurality of subpixels includes a plurality of light emitting elements, each light emitting element includes: a first electrode provided on the substrate; a light emitting layer that is laminated on the first electrode and emits light; a second electrode that is laminated on the light emitting layer and transmits light from the light emitting layer; and a first protective film that is laminated on the second electrode and transmits light from the light emitting layer, and a second protective film constituting an interface for guiding the light immediately above the light emitting element is embedded between the light emitting elements adjacent.
  • FIG. 1 is a schematic diagram illustrating an example of an overall configuration of a light emitting device 10 according to an embodiment of the present disclosure.
  • FIG. 2 is a schematic circuit diagram for explaining a connection relationship in a subpixel 100 in an m-th row and an n-th column.
  • FIG. 3 is a cross-sectional view for explaining an example of a configuration of a pixel according to a comparative example.
  • FIG. 4 is a cross-sectional view for explaining an example of a configuration of a pixel according to the first embodiment of the present disclosure.
  • FIG. 5 is a conceptual diagram for explaining a concept of the first embodiment of the present disclosure.
  • FIG. 6 is an explanatory diagram illustrating a simulation result regarding the light emitting element according to the first embodiment of the present disclosure.
  • FIG. 7 is a plan view for explaining a concept of the first embodiment of the present disclosure.
  • FIG. 8 is a cross-sectional view for explaining an example of a configuration of a pixel according to a modification of the first embodiment of the present disclosure.
  • FIG. 9 is an explanatory diagram for explaining the method for manufacturing the pixel according to the first embodiment of the present disclosure.
  • FIG. 10 is a plan view for explaining an example of a configuration of a pixel according to the second embodiment of the present disclosure.
  • FIG. 11 A is a plan view (part 1) for explaining an example of a configuration of a pixel according to a modification of the second embodiment of the present disclosure.
  • FIG. 11 B is a plan view (part 2) for explaining an example of a configuration of a pixel according to a modification of the second embodiment of the present disclosure.
  • FIG. 11 C is a plan view (part 3) for explaining an example of a configuration of a pixel according to a modification of the second embodiment of the present disclosure.
  • FIG. 11 D is a plan view (part 4) for explaining an example of a configuration of a pixel according to a modification of the second embodiment of the present disclosure.
  • FIG. 11 E is a plan view (part 5) for explaining an example of a configuration of a pixel according to a modification of the second embodiment of the present disclosure.
  • FIG. 11 F is a plan view (part 6) for explaining an example of a configuration of a pixel according to a modification of the second embodiment of the present disclosure.
  • FIG. 11 G is a plan view (part 7) for explaining an example of a configuration of a pixel according to a modification of the second embodiment of the present disclosure.
  • FIG. 11 H is a plan view (part 8) for explaining an example of a configuration of a pixel according to a modification of the second embodiment of the present disclosure.
  • FIG. 12 is a cross-sectional view for explaining an example of a configuration of a subpixel according to a comparative example.
  • FIG. 13 is a cross-sectional view for explaining an example of a configuration of a subpixel according to the third embodiment of the present disclosure.
  • FIG. 14 is a cross-sectional view for explaining an example of a configuration of a pixel according to the fourth embodiment of the present disclosure.
  • FIG. 15 is a cross-sectional view for explaining an example of a configuration of a light emitting element according to the fifth embodiment of the present disclosure.
  • FIG. 16 A is a cross-sectional view (part 1) for explaining an example of a configuration of a light emitting element according to a modification of the fifth embodiment of the present disclosure.
  • FIG. 16 B is a cross-sectional view (part 2) for explaining an example of a configuration of a light emitting element according to a modification of the fifth embodiment of the present disclosure.
  • FIG. 16 C is a cross-sectional view (part 3) for explaining an example of a configuration of a light emitting element according to a modification of the fifth embodiment of the present disclosure.
  • FIG. 17 is a cross-sectional view (part 1) for explaining an example of a configuration of a pixel according to the sixth embodiment of the present disclosure.
  • FIG. 18 is a cross-sectional view (part 2) for explaining an example of a configuration of a pixel according to the sixth embodiment of the present disclosure.
  • FIG. 19 is a cross-sectional view (part 3) for explaining an example of a configuration of a pixel according to the sixth embodiment of the present disclosure.
  • FIG. 20 is a plan view (part 1) for explaining an example of a configuration of a pixel according to the seventh embodiment of the present disclosure.
  • FIG. 21 is a plan view (part 2) for explaining an example of a configuration of a pixel according to the seventh embodiment of the present disclosure.
  • FIG. 22 is a plan view (part 3) for explaining an example of a configuration of a pixel according to the seventh embodiment of the present disclosure.
  • FIG. 23 is a plan view (part 4) for explaining an example of a configuration of a pixel according to the seventh embodiment of the present disclosure.
  • FIG. 24 A is a conceptual diagram (part 1) for explaining a relationship among a normal line LN passing through the center of the light emitting unit, a normal line LN′ passing through the center of the lens member, and a normal line LN′′ passing through the center of the wavelength selection unit.
  • FIG. 24 B is a conceptual diagram (part 2) for explaining a relationship among a normal line LN passing through the center of the light emitting unit, a normal line LN′ passing through the center of the lens member, and a normal line LN′′ passing through the center of the wavelength selection unit.
  • FIG. 24 C is a conceptual diagram (part 3) for explaining a relationship among a normal line LN passing through the center of the light emitting unit, a normal line LN′ passing through the center of the lens member, and a normal line LN′′ passing through the center of the wavelength selection unit.
  • FIG. 24 D is a conceptual diagram (part 4) for explaining a relationship among a normal line LN passing through the center of the light emitting unit, a normal line LN′ passing through the center of the lens member, and a normal line LN′′ passing through the center of the wavelength selection unit.
  • FIG. 24 E is a conceptual diagram (part 5) for explaining a relationship among a normal line LN passing through the center of the light emitting unit, a normal line LN′ passing through the center of the lens member, and a normal line LN′′ passing through the center of the wavelength selection unit.
  • FIG. 24 F is a conceptual diagram (part 6) for explaining a relationship among a normal line LN passing through the center of the light emitting unit, a normal line LN′ passing through the center of the lens member, and a normal line LN′′ passing through the center of the wavelength selection unit.
  • FIG. 24 G is a conceptual diagram (part 7) for explaining a relationship among a normal line LN passing through the center of the light emitting unit, a normal line LN′ passing through the center of the lens member, and a normal line LN′′ passing through the center of the wavelength selection unit.
  • FIG. 25 is a schematic cross-sectional view for explaining a first example of the resonator structure.
  • FIG. 26 is a schematic cross-sectional view for explaining a second example of the resonator structure.
  • FIG. 27 is a schematic cross-sectional view for explaining a third example of the resonator structure.
  • FIG. 28 is a schematic cross-sectional view for explaining a fourth example of the resonator structure.
  • FIG. 29 is a schematic cross-sectional view for explaining a fifth example of the resonator structure.
  • FIG. 30 is a schematic cross-sectional view for explaining a sixth example of the resonator structure.
  • FIG. 31 is a schematic cross-sectional view for explaining a seventh example of the resonator structure.
  • FIG. 32 A is a front view illustrating an example of an external appearance of a digital still camera.
  • FIG. 32 B is a rear view illustrating an example of an external appearance of the digital still camera.
  • FIG. 33 is an external view of a head mounted display.
  • FIG. 34 is an external view of a see-through head mounted display.
  • FIG. 35 is an external view of a television apparatus.
  • FIG. 36 is an external view of a smartphone.
  • FIG. 37 A is a diagram (part 1) illustrating an internal configuration of an automobile.
  • FIG. 37 B is a diagram (part 2) illustrating an internal configuration of an automobile.
  • the shape expressed in the following description means not only a mathematically or geometrically defined shape but also a similar shape including an allowable difference (error/distortion) in the operation of the light emitting device and the manufacturing process of the light emitting device.
  • “identical” used for a specific shape in the following description does not mean only a case of mathematically or geometrically perfect agreement, but also a case of having an allowable difference (error/distortion) in the operation of the light emitting device and the manufacturing process of the light emitting device.
  • electrically connecting means connecting a plurality of elements directly or indirectly via other elements.
  • sharing means that one other element (for example, an on-chip lens or the like) is used together between elements different from each other (for example, a pixel or the like).
  • FIG. 1 is a schematic diagram illustrating an example of an overall configuration of a light emitting device 10 according to an embodiment of the present disclosure.
  • the light emitting device 10 is, for example, a device in which light emitting elements such as an organic light emitting diode (OLED) or a micro-OLED are formed in an array.
  • a light emitting device 10 can be applied to, as a display device, for example, a display device for virtual reality (VR), mixed reality (MR), or augmented reality (AR), an electronic view finder (EVF), a small projector, or the like.
  • a display device for virtual reality (VR), mixed reality (MR), or augmented reality (AR), an electronic view finder (EVF), a small projector, or the like.
  • VR virtual reality
  • MR mixed reality
  • AR augmented reality
  • EMF electronic view finder
  • the light emitting device 10 has a display region and a peripheral region provided on a peripheral edge of the display region. As illustrated in FIG. 1 , a plurality of subpixels 100 R, 100 G, and 100 B is arranged in a matrix in a display region of the light emitting device 10 .
  • the subpixel 100 R may emit red light
  • the subpixel 100 G may emit green light
  • the subpixel 100 B may emit blue light. Note that, in the following description, the subpixels 100 R, 100 G, and 100 B are referred to as subpixels 100 unless otherwise distinguished.
  • one pixel (pixel) 20 is configured by, for example, combining three types of subpixels 100 R, 100 G, and 100 B that emit different types of light.
  • the number and arrangement of each of the three types of subpixels 100 R, 100 G, and 100 B included in one pixel 20 are not particularly limited.
  • one pixel 20 is not limited to being configured by the plurality of subpixels 100 that emits different light as described above, and may be configured by the plurality of subpixels 100 that emits the same color light.
  • the pixel 20 is also the minimum unit (pixel) controlled at the time of light emission control of the light emitting device 10 , and includes a plurality of subpixels 100 treated as one unit at the time of control. Furthermore, in the present embodiment, the light emitting device 10 includes a plurality of pixels 20 arranged in a matrix on a substrate.
  • a horizontal drive circuit 11 and a vertical drive circuit 12 are provided in a peripheral region of the light emitting device 10 .
  • the horizontal drive circuit 11 can scan each subpixel 100 in units of rows (in FIG. 1 , a direction extending along the X direction is referred to as a row direction) when writing a signal to each subpixel, and sequentially supply a scanning signal to each scanning line SCL m .
  • the horizontal drive circuit 11 can include, for example, a shift register or the like that sequentially shifts (transfers) a start pulse in synchronization with an input clock pulse.
  • the vertical drive circuit 12 can supply a signal voltage of a signal corresponding to luminance information supplied from a signal supply source (not illustrated) to the subpixels 100 selected in units of columns (in FIG. 1 , a direction extending along the Y direction is referred to as a column direction) via the signal line DTL n .
  • the configuration of the light emitting device 10 is not limited to the configuration illustrated in FIG. 1 . That is, the configuration illustrated in FIG. 1 is merely an example, and the light emitting device 10 according to the embodiment of the present disclosure can take various configurations.
  • FIG. 2 is a schematic circuit diagram for explaining a connection relationship in the subpixel 100 in the m-th row and the n-th column.
  • the subpixels 100 including the light emitting elements ELP are arranged in a two-dimensional matrix in a state of being connected to the scanning line SCL m extending in the row direction (X direction in FIG. 1 ) and the signal line DTL n extending in the column direction (Y direction in FIG. 1 ).
  • the light emitting device 10 includes a feeder line PS 1 m that supplies a drive voltage to the subpixel 100 , and a common feeder line PS 2 that is commonly connected to all the subpixels 100 . Then, a predetermined drive voltage V cc or the like is supplied from a power supply unit (not illustrated) to the feeder line PS 1 m , and a common voltage V cat (for example, ground potential) is supplied to the common feeder line PS 2 .
  • V cc or the like is supplied from a power supply unit (not illustrated) to the feeder line PS 1 m
  • V cat for example, ground potential
  • the number of scanning lines SCL and the number of feeder lines PS 1 are each M.
  • the number of signal lines DTL is set to N.
  • the subpixel 100 located in the m-th row and the n-th column may be referred to as a (n, m)-th subpixel 100 .
  • the light emitting device 10 is sequentially scanned row by row by the scanning signal from the horizontal drive circuit 11 .
  • the M subpixels 100 arranged in the m-th row are simultaneously driven.
  • the light emission/non-light emission timing is controlled in units of rows to which they belong. For example, in a case where the display frame rate of the light emitting device 10 is FR (times/second), a scanning period per row (so-called horizontal scanning period) when the light emitting device 10 is sequentially scanned row by row is less than (1/FR) ⁇ (1/P) seconds.
  • the subpixel 100 includes a light emitting element ELP and a drive circuit that drives the light emitting element ELP.
  • the light emitting element ELP is made of an organic electroluminescence light emitting element.
  • the drive circuit includes a write transistor TR W , a drive transistor TR D , and a capacitor C 1 . When a current flows through the light emitting element ELP via the drive transistor TR D , the light emitting element ELP can emit light.
  • Each transistor includes, for example, a p-channel field effect transistor.
  • one source/drain region of the drive transistor TR D is electrically connected to one end of the capacitor C 1 and the feeder line PS 1 m , and the other source/drain region is electrically connected to one end (specifically, the anode electrode) of the light emitting element ELP.
  • a gate electrode of the drive transistor TR D is connected to the other source/drain region of the write transistor TR W , and is electrically connected to the other end of the capacitor C 1 .
  • one source/drain region of the write transistor TR w is electrically connected to the signal line DTL D
  • the gate electrode of the write transistor TR w is electrically connected to the scanning line SCL m .
  • the other end (specifically, the cathode electrode) of the light emitting element ELP is electrically connected to the common feeder line PS 2 . Further, a predetermined cathode voltage V cat is supplied to the common feeder line PS 2 . Note that, in FIG. 2 , the capacitance of the light emitting element ELP is represented by a reference sign C EL .
  • the configuration of the drive circuit that controls the light emission of the light emitting element ELP is not limited to the configuration illustrated in FIG. 2 . Therefore, the configuration illustrated in FIG. 2 is merely an example, and the light emitting device 10 according to the embodiment of the present disclosure can take various configurations.
  • FIG. 3 is a cross-sectional view for explaining an example of a configuration of a pixel 20 a according to a comparative example.
  • the comparative example means the pixel 20 a that has been repeatedly examined by the present inventor before the embodiments of the present disclosure are made.
  • a light emitting device 10 a includes a plurality of pixels 20 a , and for example, the pixel 20 a is configured by a combination of three types of subpixels 102 R, 102 G, and 102 B as illustrated in FIG. 3 .
  • the subpixel 102 R can emit red light
  • the subpixel 102 G can emit green light
  • the subpixel 102 B can emit blue light.
  • the number and arrangement of each of the three types of subpixels 102 R, 102 G, and 102 B included in one pixel 20 a are not limited.
  • each subpixel 102 includes an anode electrode (first electrode) 202 provided on a substrate 300 , a light emitting layer 204 laminated on the anode electrode 202 , a cathode electrode (second electrode) 206 laminated on the light emitting layer 204 and transmitting light from the light emitting layer 204 , and a protective film (first protective film) 208 laminated on the cathode electrode 206 and transmitting light from the light emitting layer 204 .
  • first electrode first electrode
  • second electrode cathode electrode
  • protective film first protective film
  • the subpixel 102 is covered with a protective film (second protective film) 210 , and a color filter 302 and an on-chip lens 304 are provided on the protective film 210 for each subpixel 102 .
  • the light emitting layer 204 sandwiched between the anode electrode 202 and the cathode electrode 206 emits light.
  • the light emitting device 10 a according to the comparative example is a top emission type light emitting device.
  • the present inventor has intensively studied to further improve the light extraction efficiency from each subpixel 102 in such a pixel 20 a .
  • the present inventor of the present disclosure has realized that the light extraction efficiency of the light emitting device 10 can be further improved if the spread of the light radiated upward from each subpixel 102 can be narrowed (in other words, the radiation angle is reduced), and has created the embodiments of the present disclosure described below.
  • FIG. 4 is a cross-sectional view for explaining an example of the configuration of the pixel 20 according to the first embodiment of the present disclosure, and specifically, is a cross-sectional view of the pixel 20 cut in a direction perpendicular to the plane of the substrate 300 .
  • FIG. 5 is a conceptual diagram for explaining a concept of the first embodiment of the present disclosure
  • FIG. 6 is an explanatory diagram illustrating a simulation result regarding the light emitting element 200 according to the first embodiment of the present disclosure.
  • FIG. 7 is a plan view for explaining the concept of the first embodiment of the present disclosure. Specifically, the left side of FIG.
  • FIG. 7 illustrates a case where the pixel 20 a according to the comparative example is cut parallel to the plane of the substrate 300 at the height of the light emitting layer 204
  • the right side of FIG. 7 illustrates a case where the pixel 20 according to the present embodiment is cut parallel to the plane of the substrate 300 at the height of the light emitting layer 204 .
  • the pixel 20 is configured by combining three types of subpixels 100 R, 100 G, and 100 B that emit light of different colors.
  • the subpixel 100 R can emit red light
  • the subpixel 100 G can emit green light
  • the subpixel 100 B can emit blue light.
  • the number and arrangement of each of the three types of subpixels 100 R, 100 G, and 100 B included in one pixel 20 are not limited.
  • each subpixel 100 includes a plurality of light emitting elements 200 that emits the same color light. In other words, in the present embodiment, the subpixel 100 is divided into a plurality of light emitting elements 200 .
  • each light emitting element 200 has an anode electrode (first electrode) 202 provided on the substrate 300 , a light emitting layer 204 laminated on the anode electrode 202 , a cathode electrode (second electrode) 206 laminated on the light emitting layer 204 and transmitting light from the light emitting layer 204 , and a protective film (first protective film) 208 laminated on the cathode electrode 206 and transmitting light from the light emitting layer 204 , similarly to the comparative example.
  • first electrode first electrode
  • second electrode cathode electrode
  • the space between the light emitting elements 200 is filled with a protective film (second protective film) 210 .
  • a color filter 302 and an on-chip lens 304 are provided for each subpixel 100 .
  • the light extraction efficiency of the light emitting device 10 can be improved.
  • the width d of the light emitting element 200 is narrowed in the present embodiment.
  • the protective film 208 functions like a waveguide, and the light from the light emitting layer 204 can be guided upward while being suppressed from spreading. As a result, in the present embodiment, it is possible to improve the upward light extraction efficiency of the light emitting device 10 .
  • FIG. 6 illustrates a simulation result of the change in the degree of spread of light with respect to the width d of the light emitting element 200 by the present inventor.
  • FIG. 6 illustrates a graph illustrating the relationship between the width d of the light emitting element 200 and the light extraction angle (degree of spread) and the light extraction efficiency (light intensity), and a graph illustrating the relationship between the width d (processing pitch) of the light emitting element 200 and the light extraction efficiency in front of the light emitting element 200 , based on the simulation results.
  • the width d processing pitch
  • the width d of the light emitting element 200 is narrowed.
  • the aperture ratio conversely decreases, and the light from the light emitting device 10 a decreases.
  • the aperture ratio is a ratio of the area of the light emitting layer 204 to the area of the substrate 300 when viewed from above the substrate 300 .
  • the present inventor provides a plurality of light emitting elements 200 having a narrow width d in the subpixel 100 , thereby improving light extraction efficiency without reducing the aperture ratio.
  • the light extraction efficiency can be improved without reducing the aperture ratio.
  • the pixel 20 is configured by combining three types of subpixels 100 R, 100 G, and 100 B that emit light of different colors.
  • the subpixel 100 R can emit red light (for example, visible light having a wavelength of about 640 nm to 770 nm)
  • the subpixel 100 G can emit green light (for example, visible light having a wavelength of about 490 nm to 550 nm)
  • the subpixel 100 B can emit blue light (for example, visible light having a wavelength of about 430 nm to 490 nm).
  • the number and arrangement of each of the three types of subpixels 100 R, 100 G, and 100 B included in one pixel 20 are not limited.
  • the pixel 20 may include a subpixel 100 that emits light other than red light, blue light, and green light.
  • each subpixel 100 includes a plurality of light emitting elements 200 that emits light of the same color.
  • each subpixel 100 only needs to include the plurality of light emitting elements 200 , and is not limited to including the plurality of light emitting elements 200 that emits light of the same color.
  • the light emitting element 200 preferably has a rectangular shape when viewed from above the substrate 300 (in plan view), and the length of one side of the light emitting element 200 (that is, the width d) is preferably about 400 nm to 800 nm.
  • the shape of the light emitting element 200 in plan view is not limited to a rectangular shape, and may be, for example, a polygonal shape, a circular shape, an elliptical shape, or the like.
  • each light emitting element 200 includes an anode electrode (first electrode) 202 provided on the substrate 300 , a light emitting layer 204 that is laminated on the anode electrode 202 and emits light, a cathode electrode (second electrode) 206 that is laminated on the light emitting layer 204 and transmits light from the light emitting layer 204 , and a protective film (first protective film) 208 that is laminated on the cathode electrode 206 and transmits light from the light emitting layer 204 .
  • first electrode first electrode
  • second electrode cathode electrode
  • the substrate 300 can be formed of a glass substrate such as high strain point glass, soda glass, borosilicate glass, forsterite, lead glass, or quartz glass, a semiconductor substrate such as amorphous silicon or polycrystalline silicon, a resin substrate such as polymethyl methacrylate, polyvinyl alcohol, polyvinyl phenol, polyether sulfone, polyimide, polycarbonate, polyethylene terephthalate, or polyethylene naphthalate, or the like.
  • a glass substrate such as high strain point glass, soda glass, borosilicate glass, forsterite, lead glass, or quartz glass
  • a semiconductor substrate such as amorphous silicon or polycrystalline silicon
  • a resin substrate such as polymethyl methacrylate, polyvinyl alcohol, polyvinyl phenol, polyether sulfone, polyimide, polycarbonate, polyethylene terephthalate, or polyethylene naphthalate, or the like.
  • the anode electrodes 202 of the plurality of light emitting elements 200 in one subpixel 100 are electrically connected to each other, and more specifically, as illustrated on the right side of FIG. 7 , the anode electrodes 202 of the respective light emitting elements 200 are integrated to form one shared electrode. In other words, the plurality of light emitting elements 200 in one subpixel 100 shares one common electrode 202 .
  • the anode electrode 202 may also have a function as a reflection layer, and is preferably formed of a metal film having as high a reflectance as possible and a large work function in order to enhance light extraction efficiency.
  • a metal film include a metal film containing at least one of a simple substance and an alloy of metal elements such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), and silver (Ag).
  • the above-described alloy examples include an aluminum (Al) alloy such as an AlNi alloy or an AlCu alloy, and a silver (Ag) alloy such as an MgAg alloy.
  • the anode electrode 202 may be formed of a transparent conductive film such as indium tin oxide (ITO), indium zinc oxide ( 120 ), or zinc oxide (ZnO).
  • the light emitting layer 204 provided on the anode electrode 202 is made of an organic material or an inorganic material, and can emit white light.
  • the light emitting layer 204 may include a hole injection layer (not illustrated) and a hole transport layer (not illustrated) provided adjacent to the anode electrode 202 , and an electron transport layer (not illustrated) provided adjacent to the cathode electrode 206 .
  • the light emitting layer 204 can have a structure in which a hole injection layer, a hole transport layer, the light emitting layer 204 , and an electron transport layer (not illustrated) are laminated from the anode electrode 202 side.
  • the hole injection layer functions as a layer for enhancing hole injection efficiency into the light emitting layer 204 , and also functions as a buffer layer for suppressing leakage.
  • the hole transport layer functions as a layer that enhances hole transport efficiency to the light emitting layer 204 .
  • generation of an electric field causes recombination of electrons and holes, and can generate light.
  • the electron transport layer functions as a layer that increases electron transport efficiency to the light emitting layer 204 .
  • the light emitting layer 204 may have an electron injection layer (not illustrated) between the electron transport layer and the cathode electrode 206 .
  • the electron injection layer functions as a layer that enhances electron injection efficiency.
  • the configuration of the light emitting layer 204 is not limited to the above-described configuration, and layers other than the hole injection layer and the light emitting layer 204 can be provided as necessary. Furthermore, in the present embodiment, the light emitting layers 204 of the light emitting elements 200 of all the subpixels 100 may be formed to have the same structure or may be formed to have different structures, and is not particularly limited.
  • the cathode electrode 206 provided on the light emitting layer 204 is a transparent electrode having transparency to light generated in the light emitting layer 204 , and in the following description, the transparent electrode also includes a semi-transparent electrode.
  • the cathode electrode 206 can be formed of a metal film containing at least one of a simple substance or an alloy of a metal element such as aluminum (Al), magnesium (Mg), calcium (Ca), sodium (Na), or silver (Ag).
  • specific examples of the alloy include an aluminum (Al) alloy such as an MgAg alloy or an AlLi alloy, and a silver (Ag) alloy.
  • the cathode electrode 206 may be formed of a transparent conductive film such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).
  • the protective film 208 provided on the cathode electrode 206 is formed of a material having a high refractive index.
  • the protective film 208 is formed of a material having a refractive index of about 1.7 to 2.1 with respect to light having a wavelength of about 450 nm at room temperature, for example.
  • the protective film 208 is formed of, for example, a nitride film such as silicon nitride (SiN), a transparent conductive film such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO), or a transparent organic film.
  • a protective film (second protective film) 210 constituting an interface for guiding light immediately above the light emitting element 200 together with the protective film 208 is embedded between the adjacent light emitting elements 200 .
  • the protective film 210 is embedded between the adjacent light emitting elements 200 and is provided so as to cover the light emitting elements 200 .
  • the protective film 210 is provided so as to fill between the adjacent light emitting elements 200 from the position of the upper surface of the protective film 208 to the position of the lower surface of the light emitting layer 204 .
  • the protective film 210 is preferably formed of a material having a refractive index lower than that of the protective film 208 , and is preferably formed of a material having a refractive index having a difference of, for example, 0.3 or more with respect to the protective film 208 .
  • the protective film 210 can be formed of, for example, an oxide film such as silicon oxide (SiO 2 ) or aluminum oxide (Al 2 O 3 ), a resin film, or a cavity, that is, air (air gap).
  • the protective films 208 and 210 from a material having a refractive index as described above, light from the light emitting layer 204 is diffracted many times at the boundary between the protective film 208 and the protective film 210 , and can be confined in the protective film 208 and interfere with each other.
  • the color filter 302 and the on-chip lens 304 are provided above the protective film 208 for each subpixel 100 .
  • the plurality of light emitting elements 200 included in one subpixel 100 shares one on-chip lens 304 , and share one color filter 302 provided between the protective film 208 and the on-chip lens 304 .
  • the color filter 302 can be formed of a color filter that transmits a red wavelength component, a color filter that transmits a green wavelength component, or a color filter that transmits a blue wavelength component.
  • the color filter 302 can be formed of a material in which a pigment or a dye is dispersed in a transparent binder such as silicone.
  • the on-chip lens 304 can be formed of a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, a siloxane resin, or the like.
  • the subpixel 100 includes the plurality of light emitting elements 200 having the width d of 400 nm to 800 nm, for example, and the protective film 210 embedded between the adjacent light emitting elements 200 is formed of a material having a refractive index lower than that of the protective film 208 of the light emitting element 200 . Therefore, in the present embodiment, the protective film 208 and the protective film 210 form an interface for guiding light immediately above the light emitting element 200 . As a result, in the present embodiment, the light from the light emitting layer 204 of the light emitting element 200 is diffracted many times at the boundary between the protective film 208 and the protective film 210 surrounding the protective film 208 , and interferes in the protective film 208 .
  • the protective film 208 functions like a waveguide and guides more light from the light emitting layer 204 upward, the light extraction efficiency of the light emitting device 10 can be improved. Furthermore, in the present embodiment, since the subpixel 100 includes the plurality of light emitting elements 200 sharing one anode electrode 202 , even in a case where the light emitting element 200 having a small width d is provided, it is possible to avoid lowering the aperture ratio. As a result, according to the present embodiment, the light extraction efficiency can be improved without reducing the aperture ratio.
  • the subpixel 100 since the subpixel 100 includes the plurality of light emitting elements 200 , for example, even if one light emitting element 200 included in one subpixel 100 fails and does not emit light, it is possible to maintain the light emission of the subpixel 100 by the other light emitting elements 200 emitting light. Therefore, in the present embodiment, the operation of the light emitting device 10 can be made more stable.
  • the present embodiment is not limited to the configuration illustrated on the right side of FIGS. 4 and 7 , and the film thickness of each element constituting the subpixel 100 is not particularly limited, and can be appropriately selected according to desired characteristics.
  • FIG. 8 is a cross-sectional view for explaining an example of a configuration of a pixel according to a modification of the present embodiment, and corresponds to the cross-sectional view illustrated in FIG. 4 .
  • the color filter 302 may not be provided between the protective film 208 and the on-chip lens 304 .
  • a light emitting layer 204 a of each light emitting element 200 is made of an organic material or an inorganic material, and is formed of a layer capable of emitting any one of red light, green light, and blue light.
  • FIG. 9 is an explanatory diagram for explaining the method for manufacturing the pixel 20 of the present embodiment, and corresponds to the cross-sectional view of FIG. 4 .
  • a patterned anode electrode 202 is formed on a substrate 300 , and a light emitting layer 204 , a cathode electrode 206 , and a protective film 208 are sequentially laminated on the anode electrode 202 .
  • a mask 400 having a predetermined pattern is formed on the protective film 208 by photolithography.
  • the lamination including the light emitting layer 204 , the cathode electrode 206 , and the protective film 208 is dry-etched according to the pattern of the mask 400 , and the lamination is divided into a plurality of light emitting elements 200 .
  • a protective film 210 is embedded between the divided light emitting elements 200 .
  • the structure illustrated in FIG. 4 can be obtained by forming a contact electrode (not illustrated), a color filter 302 , and an on-chip lens 304 on the protective film 210 and the light emitting element 200 .
  • FIG. 10 is a plan view for explaining an example of the configuration of the pixel according to the second embodiment of the present disclosure, and corresponds to the plan view illustrated on the right side of FIG. 7 .
  • the plurality of light emitting elements 200 is provided on one anode electrode 202 .
  • the embodiment of the present disclosure is not limited to such a form, and the anode electrodes 202 of the plurality of light emitting elements 200 in one subpixel 100 is only required to be electrically connected to each other.
  • the anode electrodes 202 of the four light emitting elements 200 arranged in a square array are electrically connected to each other by a connection electrode 202 a located at the center of the entirety of the four light emitting elements 200 .
  • FIGS. 11 A to 11 H are plan views for explaining an example of a configuration of a pixel according to the modification of the present embodiment.
  • one or two types of subpixels 100 include a plurality of light emitting elements 200 similarly to the first embodiment.
  • the remaining subpixels 102 in FIG. 11 A , a subpixel 102 R that emits red light and a subpixel 102 G that emits green light
  • the plurality of light emitting elements 200 is not included, but one subpixel 102 is configured. In this way, according to the present modification, the light extraction efficiency can be adjusted according to the color of light.
  • the sizes of the light emitting elements 200 of one or two types of subpixels 100 may be different from the sizes of the light emitting elements 200 of the remaining subpixels 100 (in FIG. 11 B , a subpixel 100 R that emits red light and a subpixel 100 G that emits green light).
  • the size of the light emitting element 200 of the subpixel 100 B that emits blue light is larger than the sizes of the light emitting elements 200 of the subpixels 100 R and 100 G that emit red light and green light. In this way, according to the present modification, the light extraction efficiency can be adjusted according to the color of light.
  • the subpixel 100 is not limited to being configured by the four light emitting elements 200 arrayed in a square array, and may be configured by two rectangular light emitting elements 200 arrayed along the Y direction in the drawing.
  • the degree of spread of light along the X direction and the Y direction in the drawing can be adjusted.
  • the subpixel 100 may include two light emitting elements 200 arranged along the X direction in the drawing.
  • the subpixel 100 may include a light emitting element 200 a located inside and a light emitting element 200 b surrounding the light emitting element 200 a .
  • the width of one side of the light emitting element 200 a on the inner side is wider than the width of the light emitting element 200 b located on the outer side, the light easily spreads, but since the width of the light emitting element 200 b located on the outer side is narrow, the spread of the light can be suppressed in the entire subpixel 100 . In this way, according to the present modification, the intensity of light from the subpixel 100 can be made uniform.
  • one subpixel 100 is not limited to being configured by four light emitting elements 200 arranged in a square array, and may be configured by, for example, three light emitting elements 200 arranged along the Y direction in the drawing as illustrated in FIG. 11 E .
  • the subpixel 100 may include three light emitting elements 200 arranged along the X direction in the drawing.
  • one subpixel 100 may be configured by a plurality of light emitting elements 200 arranged in a polygonal array (specifically, the light emitting element 200 is located at a position of each vertex of the polygon). In this way, according to the present modification, the degree of spread of light along the X direction and the Y direction in the drawing can be adjusted.
  • one subpixel 100 is not limited to being configured by the plurality of rectangular light emitting elements 200 , and may be configured by, for example, a plurality of light emitting elements 200 having a polygonal shape in plan view as illustrated in FIG. 11 F .
  • the light emitting element 200 has a pentagonal shape. In this way, according to the present modification, the degree of spread of light along a desired direction in the drawing can be adjusted.
  • the three types of subpixels 100 included in one pixel 20 may not have the same number of light emitting elements 200 .
  • the number of light emitting elements 200 of one or two types of subpixels 100 (in FIGS. 11 G and 11 H , the subpixel 100 B that emits blue light) is 4, but the number of light emitting elements 200 of the remaining subpixels 100 (in FIGS. 11 G and 11 H , a subpixel 100 R that emits red light and a subpixel 100 G that emits green light) is 2.
  • the light extraction efficiency can be adjusted according to the color of light.
  • FIG. 12 is a cross-sectional view for explaining an example of a configuration of a subpixel 102 according to a comparative example
  • FIG. 13 is a cross-sectional view for explaining an example of a configuration of a subpixel 100 according to the present embodiment
  • these drawings correspond to the cross-sectional view of FIG. 4 .
  • periodic nanostructures plasmonic crystals
  • the vector of the surface plasmon along the surface direction of the anode electrode 202 is reduced, and the light from the light emitting layer 204 is suppressed from moving along the surface of the anode electrode 202 .
  • periodic steps are formed on the surface of the anode electrode 202 in order to suppress plasmon loss.
  • the light emitting layer 204 , the cathode electrode 206 , and the protective film 208 are sequentially laminated on the anode electrode 202 on which the periodic steps are formed.
  • a periodic step is formed in the anode electrode (common electrode) 202 of the light emitting element 200 , as described above.
  • a protrusion (first region) where the light emitting layer 204 is laminated and a recess (second region) where the light emitting layer 204 is not laminated are formed on the upper surface of the anode electrode 202 .
  • the protective film 210 is provided so as to be embedded from the position of the upper surface of the protective film 208 to a position lower than the lower surface of the light emitting layer 204 between the adjacent light emitting elements 200 .
  • the anode electrode 202 , the light emitting layer 204 , the cathode electrode 206 , and the protective film 208 are sequentially laminated, and then the anode electrode 202 is partially etched to be divided into a plurality of light emitting elements 200 . Furthermore, by embedding the protective film 210 between the divided light emitting elements 200 , a structure as illustrated in FIG. 13 can be obtained. That is, in the present embodiment, the light emitting layer 204 can be formed on the anode electrode 202 having periodic steps by self-alignment.
  • the present embodiment it is possible to suppress the light emitted from the subpixel 102 from easily spreading and the occurrence of the failure of the light emitting element 200 while suppressing the plasmon loss.
  • FIG. 14 is a cross-sectional view for explaining an example of the configuration of the pixel 20 according to the present embodiment, and corresponds to the cross-sectional view of FIG. 4 .
  • the width d of the light emitting element 200 differs according to the color of the light emitted from the subpixel 100 . Specifically, by narrowing the width d of the light emitting element 200 according to the wavelength of light, light from the light emitting layer 204 can be more effectively interfered in the protective film 208 , and the protective film 208 can guide the light upward, so that the light extraction efficiency can be improved. In the present embodiment, the light extraction efficiency can be further improved by narrowing the width d of the light emitting element 200 so as to be close to the interference limit of each light.
  • the width de of the adjacent light emitting elements 200 in the subpixel 100 G that emits green light is narrower than the width de of the adjacent light emitting elements 200 in the subpixel 100 B that emits blue light, and is wider than the width dr of the adjacent light emitting elements 200 in the subpixel 100 R that emits red light.
  • the interference effect of the light in the protective film 208 can be further enhanced, and the light extraction efficiency can be further improved.
  • FIG. 15 is a cross-sectional view for explaining an example of the configuration of the light emitting element 200 according to the present embodiment, and corresponds to the cross-sectional view of FIG. 4 .
  • the common contact electrode 310 in a case where the protective film 208 is formed of a conductive material is illustrated.
  • the common contact electrode 310 is provided so as to cover the protective film 208 , and the cathode electrodes 206 of the plurality of adjacent light emitting elements 200 can be electrically connected by electrically connecting the protective film 208 .
  • FIGS. 16 A to 16 C are cross-sectional views for explaining an example of a configuration of a light emitting element 200 according to a modification of the present embodiment, and correspond to the cross-sectional view of FIG. 4 .
  • the protective film 210 is provided so as to be embedded from the position of the lower surface of the protective film 208 to a position lower than the lower surface of the light emitting layer 204 between the adjacent light emitting elements 200 .
  • the above-described common contact electrode 310 is provided so as to cover the entire protective film 208 and to cover a part of the side surface of the cathode electrode 206 .
  • the common contact electrode 310 is electrically connected to a part of the side surface of the cathode electrode 206 .
  • the cathode electrodes 206 of the plurality of adjacent light emitting elements 200 can be electrically connected by the common contact electrode 310 .
  • a wall 206 a is formed of a conductive material so as to surround the periphery of the cathode electrode 206 , and a protective film 208 is further laminated in a region surrounded by the wall 206 a .
  • the common contact electrode 310 is formed so as to cover the entire protective film 208 surrounded by the wall 206 a .
  • the cathode electrodes 206 of the plurality of adjacent light emitting elements 200 can be electrically connected by the common contact electrode 310 .
  • the protective film 208 has an opening 208 a that exposes the upper surface of the cathode electrode 206 , and the common contact electrode 310 is provided so as to cover the inside of the opening 208 a .
  • the cathode electrodes 206 of the plurality of adjacent light emitting elements 200 can be electrically connected by the common contact electrode 310 .
  • the protective film (second protective film) 210 is only required to be provided so as to form an interface for guiding light immediately above the light emitting element 200 . That is, the present disclosure is not limited to the configuration in which the protective film 210 is embedded between the adjacent light emitting elements 200 and is provided so as to cover the light emitting elements 200 as in each of the embodiments described above. Therefore, the sixth embodiment of the present disclosure in which a protective film (second protective film) 214 has a different form from the protective film 210 in the previous embodiments will be described with reference to FIGS. 17 to 19 .
  • FIGS. 17 to 19 are cross-sectional views for explaining an example of a configuration of a pixel according to the present embodiment.
  • each subpixel 100 includes a plurality of light emitting elements 200 similarly to the embodiments described above.
  • each light emitting element 200 includes an anode electrode 202 provided on the substrate 300 , a light emitting layer 204 laminated on the anode electrode 202 , a cathode electrode 206 laminated on the light emitting layer 204 , and a protective film 208 laminated on the cathode electrode 206 .
  • each layer constituting the light emitting element 200 is formed of the material described in the first embodiment, the description thereof is omitted here.
  • the light emitting element 200 has a rectangular shape when viewed from above the substrate 300 (in plan view), and the length of one side of the light emitting element 200 is about 400 nm to 800 nm.
  • the shape of the light emitting element 200 in plan view is not limited to the rectangular shape, and may be, for example, a polygonal shape, a circular shape, an elliptical shape, or the like.
  • a protective film 214 constituting an interface for guiding light immediately above the light emitting element 200 is embedded between the adjacent light emitting elements 200 .
  • the upper surface of the protective film 214 is higher than the position of the upper surface of the protective film 208
  • the lower surface of the protective film 214 is lower than the position of the upper surface of the light emitting layer 204 .
  • the protective film 214 is formed of a material having a refractive index lower than that of the protective film 208 and a refractive index lower than that of a protective film (third protective film) 212 described later, similarly to the embodiments described above.
  • the protective film 214 is formed of a material having a refractive index lower than those of the protective films 208 and 212 , and is preferably formed of a material having a refractive index having a difference of, for example, 0.3 or more from the protective films 208 and 212 .
  • the protective film 214 can be formed of, for example, an oxide film such as silicon oxide (SiO 2 ) or aluminum oxide (Al 2 O 3 ), a resin film, or a cavity, that is, air (air gap).
  • the protective film 214 may be formed of a metal film.
  • the protective film 214 can be formed using, for example, a metal such as aluminum (Al), silver (Ag), copper (Cu), titanium (Ti), or tungsten (W), or an alloy containing these as a main component.
  • the interval between the adjacent protective films 214 is preferably, for example, 400 nm to 800 nm.
  • the protective film 208 and the protective film 210 are covered with a protective film (third protective film) 212 .
  • the protective film 212 is formed of a material having the same or lower refractive index than the protective film 208 .
  • the protective film 212 is formed of a nitride film such as silicon nitride (SiN), an oxide film such as silicon oxide (SiO 2 ) or aluminum oxide (Al 2 O 3 ), a resin film, or the like.
  • the protective film 214 embedded between the adjacent light emitting elements 200 is formed of a material having a lower refractive index than the protective films 208 and 212 or a metal film. Therefore, in the present embodiment, the protective film 214 and the protective film 212 form an interface for guiding light immediately above the light emitting element 200 . As a result, in the present embodiment, the light from the light emitting layer 204 of the light emitting element 200 is diffracted many times at the interface between the protective film 214 and the protective film 212 , and interferes in the protective film 208 .
  • the light extraction efficiency of the light emitting device 10 can be improved.
  • the subpixel 100 since the subpixel 100 includes the plurality of light emitting elements 200 sharing one anode electrode 202 , even in a case where the light emitting element 200 having a small width d is provided, it is possible to avoid lowering the aperture ratio. As a result, according to the present embodiment, the light extraction efficiency can be improved without reducing the aperture ratio.
  • the protective film 214 is preferably provided such that the upper surface of the protective film 214 reaches the height of the lower surface of the color filter 302 on the protective film (third protective film) 212 described later. In this way, the light from the light emitting layer 204 of the light emitting element 200 can be more guided toward the upper side of the light emitting element 200 .
  • the anode electrode 202 may have a periodic step, similarly to the third embodiment of the present disclosure, and in this case, the light emitting layer 204 is provided at the protrusion portion of the anode electrode 202 .
  • the protective film 214 is preferably provided such that the lower surface of the protective film 214 reaches the surface of the recess portion of the anode electrode 202 . In this way, the light from the light emitting layer 204 of the light emitting element 200 can be more guided toward the upper side of the light emitting element 200 .
  • FIGS. 20 to 23 are plan views for explaining an example of the configuration of the pixel 20 according to the present embodiment. Specifically, FIGS. 20 to 23 illustrate a case where the pixel 20 is cut parallel to the plane of the substrate 300 at the height of the light emitting layer 204 .
  • one pixel (pixel) 20 may include a plurality of subpixels 100 that emits light of the same color. Furthermore, each subpixel 100 may include a plurality of light emitting elements 200 that emits light of the same color.
  • each light emitting element 200 may have a circular shape when viewed from above the substrate 300 .
  • each light emitting element 200 may have an elliptical shape when viewed from above the substrate 300 .
  • one pixel 20 may have a plurality of subpixels 100 having light emitting elements 200 having planar shapes different from each other.
  • the subpixels 100 G and 100 R have a circular light emitting element 200
  • the subpixels 100 B- 1 and 100 B- 2 have an elliptical light emitting element 200 .
  • the light emitting element 200 is not limited to having a different shape for each subpixel 100 .
  • the plurality of light emitting elements 200 may have different shapes in one subpixel 100 , or the light emitting elements 200 may have different shapes for each pixel 20 .
  • the light emitting element 200 of the subpixel 100 B- 1 has an elliptical shape having a major axis along the X direction in the drawing
  • the light emitting element 200 of the subpixel 100 B- 2 has an elliptical shape having a major axis along the Y direction in the drawing.
  • the major axis of the ellipse may have an inclination with respect to the X direction or the Y direction.
  • the major axis of the ellipse of the light emitting element 200 is not limited to having a different inclination for each subpixel 100 .
  • the major axes of the ellipses of the plurality of light emitting elements 200 may have different inclinations, or the major axes of the ellipses of the light emitting elements 200 may have different inclinations for each pixel 20 .
  • the shape of the light emitting element 200 in plan view is not limited to the rectangular shape, and can be various shapes such as a polygonal shape, a circular shape, and an elliptical shape, for example.
  • the subpixel 100 includes the plurality of light emitting elements 200 having the width d of 400 nm to 800 nm, for example, and the protective film 210 embedded between the adjacent light emitting elements 200 is formed of a material having a lower refractive index than the protective film 208 of the light emitting element 200 . Therefore, in the present embodiment, the light from the light emitting layer 204 of the light emitting element 200 is diffracted many times at the interface between the protective film 208 and the protective film 210 , and interferes in the protective film 208 .
  • the protective film 214 embedded between the adjacent light emitting elements 200 is formed of a material having a refractive index lower than that of the protective film 208 of the light emitting element 200 and the protective film 212 covering the protective films 208 and 214 . Therefore, in the present embodiment, the light from the light emitting layer 204 of the light emitting element 200 is diffracted many times at the interface between the protective film 212 and the protective film 214 , and interferes in the protective film 208 .
  • the protective film 214 buried between the adjacent light emitting elements 200 is formed of a metal film.
  • the light from the light emitting layer 204 of the light emitting element 200 is reflected many times by the protective film 214 and interferes in the protective film 208 . Therefore, in the present embodiment, since the protective film 208 functions like a waveguide and guides more light from the light emitting layer 204 upward, the light extraction efficiency of the light emitting device 10 can be improved. Furthermore, in the present embodiment, since the subpixel 100 includes the plurality of light emitting elements 200 sharing one anode electrode 202 , even in a case where the light emitting element 200 having a small width d is provided, it is possible to avoid lowering the aperture ratio. As a result, according to the present embodiment, the light extraction efficiency can be improved without reducing the aperture ratio.
  • the subpixel 100 since the subpixel 100 includes the plurality of light emitting elements 200 , for example, even if one light emitting element 200 included in one subpixel 100 fails and does not emit light, it is possible to maintain the light emission of the subpixel 100 by the other light emitting elements 200 emitting light. Therefore, in the present embodiment, the operation of the light emitting device 10 can be made more stable.
  • the light emitting device 10 according to the embodiment of the present disclosure can be manufactured by using a method, a device, and conditions used for manufacturing a general semiconductor device. That is, the light emitting device 10 according to the present embodiment can be manufactured using an existing method for manufacturing a semiconductor device.
  • examples of the above-described method include a physical vapor deposition (PVD) method, a chemical vapor deposition (CVD) method, and an atomic layer deposition (ALD) method.
  • PVD method include a vacuum vapor deposition method, an electron beam (EB) vapor deposition method, various sputtering methods (magnetron sputtering method, radio frequency (RF)-direct current (DC) coupled bias sputtering method, electron cyclotron resonance (ECR) sputtering method, counter target sputtering method, high frequency sputtering method, and the like), an ion plating method, a laser ablation method, a molecular beam epitaxy (MBE) method, and a laser transfer method.
  • RF radio frequency
  • DC direct current
  • ECR electron cyclotron resonance
  • MBE molecular beam epitaxy
  • examples of the CVD method include a plasma CVD method, a thermal CVD method, an organic metal (MO) CVD method, and a photo CVD method.
  • other methods include an electrolytic plating method, an electroless plating method, and a spin coating method; immersion method; cast method; micro-contact printing; drop cast method; various printing methods such as a screen printing method, an inkjet printing method, an offset printing method, a gravure printing method, and a flexographic printing method; stamping method; spray method;
  • examples of the coating method include various coating methods such as an air doctor coater method, a blade coater method, a rod coater method, a knife coater method, a squeeze coater method, a reverse roll coater method, a transfer roll coater method, a gravure coater method, a kiss coater method, a cast coater method, a spray coater method, a slit orifice coater method, and a calender coater method.
  • examples of the patterning method include chemical etching such as shadow mask, laser transfer, and photolithography, and physical etching using ultraviolet rays, laser, or the like.
  • examples of the planarization technique include a chemical mechanical polishing (CMP) method, a laser planarization method, a reflow method, and the like.
  • FIGS. 24 A to 24 G a modification of the relationship between the normal line IN passing through the center of the subpixel 100 (specifically, the center of the plurality of light emitting elements 200 included in one subpixel 100 ), the normal line LN′ passing through the center of the lens member (specifically, the on-chip lens 304 ), and the normal line LN′′ passing through the center of the wavelength selection unit (specifically, the color filter 302 ) will be described with reference to FIGS. 24 A to 24 G .
  • FIGS. 24 A to 24 G a modification of the relationship between the normal line IN passing through the center of the subpixel 100 (specifically, the center of the plurality of light emitting elements 200 included in one subpixel 100 ), the normal line LN′ passing through the center of the lens member (specifically, the on-chip lens 304 ), and the normal line LN′′ passing through the center of the wavelength selection unit (specifically, the color filter 302 )
  • 24 A to 24 G are conceptual diagrams for explaining a relationship among a normal line LN passing through the center of the light emitting unit, a normal line LN′ passing through the center of the lens member, and a normal line LN′′ passing through the center of the wavelength selection unit. Note that, in the following description, the center of the subpixel 100 is referred to as the center of the light emitting unit.
  • the size of the wavelength selection unit may be appropriately changed according to the light emitted from the subpixel 100 .
  • the size of the light absorption layer (black matrix layer) may be appropriately changed according to the light emitted from the subpixel 100 .
  • the size of the wavelength selection unit (for example, the color filter 302 ) may be appropriately changed according to the distance (offset amount) do between the normal line passing through the center of the subpixel 100 and the normal line passing through the center of the color filter 302 .
  • the planar shape of the wavelength selection unit (for example, the color filter 302 ) may be the same as, similar to, or different from the planar shape of the lens member (for example, the on-chip lens 304 ).
  • a normal line LN passing through the center of the light emitting unit, a normal line IN′′ passing through the center of the wavelength selection unit, and a normal line LN′ passing through the center of the lens member may coincide with each other.
  • the distance (offset amount) Do between the normal line passing through the center of the light emitting unit and the normal line passing through the center of the lens member and the distance (offset amount) do between the normal line passing through the center of the light emitting unit and the normal line passing through the center of the wavelength selection unit can be equal to 0 (zero).
  • the normal line LN passing through the center of the light emitting unit and the normal line LN′′ passing through the center of the wavelength selection unit coincide with each other, but the normal line LN passing through the center of the light emitting unit and the normal line LN′′ passing through the center of the wavelength selection unit may not coincide with the normal line LN′ passing through the center of the lens member.
  • D 0 ⁇ d 0 0 may be satisfied.
  • the normal line LN passing through the center of the light emitting unit may not coincide with the normal line LN′′ passing through the center of the wavelength selection unit and the normal line LN′ passing through the center of the lens member, and the normal line LN′′ passing through the center of the wavelength selection unit may coincide with the normal line LN′ passing through the center of the lens member.
  • a normal line LN passing through the center of the light emitting unit may not match a normal line LN′′ passing through the center of the wavelength selection unit and a normal line LN′ passing through the center of the lens member, and the normal line LN′ passing through the center of the lens member may not match the normal line LN passing through the center of the light emitting unit and the normal line LN′′ passing through the center of the wavelength selection unit.
  • the center of the wavelength selection unit (indicated by a black square in FIG. 24 D ) is preferably located on a straight line LL connecting the center of the light emitting unit and the center of the lens member (indicated by a black circle in FIG. 24 D ).
  • d 0 :D 0 LL 1 :(LL 1 +LL 2 ) is satisfied in consideration of manufacturing variations.
  • the lamination relationship between the wavelength distal end portion and the lens member may be interchanged.
  • the normal line LN passing through the center of the light emitting unit, the normal line LN′′ passing through the center of the wavelength selection unit, and the normal line LN′ passing through the center of the lens member may coincide with each other.
  • the normal line LN passing through the center of the light emitting unit may not match the normal line LN′′ passing through the center of the wavelength selection unit and the normal line LN′ passing through the center of the lens member, and the normal line LN′′ passing through the center of the wavelength selection unit may match the normal line LN′ passing through the center of the lens member.
  • a normal line LN passing through the center of the light emitting unit may not match a normal line LN′′ passing through the center of the wavelength selection unit and a normal line LN′ passing through the center of the lens member, and the normal line LN′ passing through the center of the lens member may not match the normal line LN passing through the center of the light emitting unit and the normal line LN′′ passing through the center of the wavelength selection unit.
  • the center of the wavelength selection unit is preferably located on a straight line LL connecting the center of the light emitting unit and the center of the lens member.
  • the subpixel 100 (specifically, the light emitting element 200 ) used in the light emitting device according to the embodiment of the present disclosure described above may have a resonator structure that causes light generated in the light emitting layer 204 to resonate.
  • the resonator structure will be described with reference to FIGS. 25 to 31 .
  • FIG. 25 is a schematic cross-sectional view for explaining a first example of the resonator structure
  • FIG. 26 is a schematic cross-sectional view for explaining a second example of the resonator structure
  • FIG. 27 is a schematic cross-sectional view for explaining a third example of the resonator structure.
  • FIG. 28 is a schematic cross-sectional view for explaining a fourth example of the resonator structure
  • FIG. 29 is a schematic cross-sectional view for explaining a fifth example of the resonator structure. Furthermore, FIG. 30 is a schematic cross-sectional view for explaining a sixth example of the resonator structure, and FIG. 31 is a schematic cross-sectional view for explaining a seventh example of the resonator structure.
  • FIG. 25 is a schematic cross-sectional view for explaining a first example of the resonator structure.
  • the first electrode for example, an anode electrode
  • the second electrode for example, a cathode electrode
  • a reflector 401 is disposed below the first electrode 202 of the subpixel 100 with an optical adjustment layer 402 interposed therebetween.
  • a resonator structure that resonates light generated by the organic layer (specifically, the light emitting layer) 204 is formed between the reflector 401 and the second electrode 206 .
  • the reflector 401 is formed with a common film thickness in each subpixel 100 .
  • the film thickness of the optical adjustment layer 402 varies depending on the color to be displayed by the subpixel 100 . Since optical adjustment layers 402 R, 402 G, and 402 B have different film thicknesses, it is possible to set an optical distance at which optimum resonance occurs for a wavelength of light corresponding to a color to be displayed.
  • the upper surfaces of the reflectors 401 in the subpixels 100 R, 100 G, and 100 B are arranged so as to be aligned.
  • the position of the upper surface of the second electrode 206 varies depending on the types of the subpixels 100 R, 100 G, and 100 B.
  • the reflector 401 can be formed using, for example, a metal such as aluminum (Al), silver (Ag), or copper (Cu), or an alloy containing these as a main component.
  • the optical adjustment layer 402 can be made of an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiOxNy), or an organic resin material such as an acrylic resin or a polyimide resin.
  • the optical adjustment layer 402 may be a single layer or a laminated film of a plurality of materials. Furthermore, the number of laminated layers may be different according to the type of the subpixel 100 .
  • the first electrode 202 can be formed using, for example, a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).
  • a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).
  • the second electrode 206 preferably functions as a semi-transmission reflection film.
  • the second electrode 206 can be formed using magnesium (Mg), silver (Ag), a magnesium-silver alloy (MgAg) containing these as a main component, an alloy containing an alkali metal or an alkaline earth metal, or the like.
  • FIG. 26 is a schematic cross-sectional view for explaining a second example of the resonator structure. Also in the second example, the first electrode 202 and the second electrode 206 are formed with a common film thickness in each subpixel 100 .
  • the reflector 401 is disposed below the first electrode 202 of the subpixel 100 with the optical adjustment layer 402 interposed therebetween.
  • a resonator structure that resonates light generated by the organic layer 204 is formed between the reflector 401 and the second electrode 206 .
  • the reflector 401 is formed with a common film thickness in each subpixel 100 , and the film thickness of the optical adjustment layer 402 varies depending on the color to be displayed by the subpixel 100 .
  • the upper surfaces of the reflectors 401 in the subpixels 100 R, 100 G, and 100 B are arranged so as to be aligned, and the positions of the upper surfaces of the second electrodes 206 are different depending on the types of the subpixels 100 R, 100 G, and 100 B.
  • the upper surfaces of the second electrodes 206 are arranged so as to be aligned in the subpixels 100 R, 100 G, and 100 B.
  • the upper surfaces of the reflectors 401 in the subpixels 100 R, 100 G, and 100 B are arranged differently according to the types of the subpixels 100 R, 100 G, and 100 B. Therefore, the lower surface of the reflector 401 has a stair shape according to the types of the subpixels 100 R, 100 G, and 100 B.
  • the reflector 401 is disposed below the first electrode 202 of the subpixel 100 with the optical adjustment layer 402 interposed therebetween.
  • a resonator structure that resonates light generated by the organic layer 204 is formed between the reflector 401 and the second electrode 206 .
  • the film thickness of the optical adjustment layer 402 varies depending on the color to be displayed by the subpixel 100 .
  • the positions of the upper surfaces of the second electrodes 206 are arranged so as to be aligned in the subpixels 100 R, 100 G, and 100 B.
  • the lower surface of the reflector 401 has a stair shape according to the types of the subpixels 100 R, 100 G, and 100 B.
  • the reflector 401 Materials and the like constituting the reflector 401 , the optical adjustment layer 402 , the first electrode 202 , and the second electrode 206 are similar to the contents described in the first example, and thus the description thereof is omitted.
  • FIG. 28 is a schematic cross-sectional view for explaining a fourth example of the resonator structure.
  • the first electrode 202 and the second electrode 206 of the subpixel 100 are formed with a common film thickness. Then, the reflector 401 is disposed below the first electrode 202 of the subpixel 100 with the optical adjustment layer 402 interposed therebetween.
  • the optical adjustment layer 402 is omitted, and the film thickness of the first electrode 202 is set to be different according to the types of the subpixels 100 R, 100 G, and 100 B.
  • the reflector 401 is formed with a common film thickness in each subpixel 100 .
  • the film thickness of the first electrode 202 varies depending on the color to be displayed by the subpixel 100 . Since the first electrodes 202 R, 202 G, and 202 B have different film thicknesses, it is possible to set an optical distance that generates optimum resonance for the wavelength of light according to the color to be displayed.
  • the first electrode 202 and the second electrode 206 are formed with a common film thickness in each subpixel 100 . Then, the reflector 401 is disposed below the first electrode 202 of the subpixel 100 with the optical adjustment layer 402 interposed therebetween.
  • the optical adjustment layer 402 is omitted, and instead, an oxide film 404 is formed on the surface of the reflector 401 .
  • the film thickness of the oxide film 404 was set to be different according to the types of the subpixels 100 R, 100 G, and 100 B.
  • the film thickness of the oxide film 404 varies depending on the color to be displayed by the subpixel 100 . Since oxide films 404 R, 404 G, and 404 B have different film thicknesses, it is possible to set an optical distance at which optimum resonance occurs for a wavelength of light corresponding to a color to be displayed.
  • the oxide film 404 is a film obtained by oxidizing the surface of the reflector 401 , and is made of, for example, aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, or the like.
  • the oxide film 404 functions as an insulating film for adjusting an optical path length (optical distance) between the reflector 401 and the second electrode 206 .
  • the oxide film 404 having different film thicknesses depending on the types of the subpixels 100 R, 100 G, and 100 B can be formed, for example, as follows.
  • the electrolytic solution is filled in the container, and the substrate on which the reflector 401 is formed is immersed in the electrolytic solution. Further, the electrode is disposed so as to face the reflector 401 .
  • the reflector 401 is anodized.
  • the film thickness of the oxide film due to the anodization is proportional to the voltage value with respect to the electrode. Therefore, anodization is performed in a state where voltages corresponding to the types of the subpixels 100 R, 100 G, and 100 B are applied to the reflectors 401 R, 401 G, and 401 B, respectively.
  • the oxide films 404 having different film thicknesses can be collectively formed.
  • FIG. 30 is a schematic cross-sectional view for explaining a sixth example of the resonator structure.
  • the subpixel 100 is configured by laminating a first electrode 202 , an organic layer 204 , and a second electrode 206 .
  • the first electrode 202 is formed to function as both an electrode and a reflector.
  • the first electrode (also serving as a reflector) 202 is formed of a material having an optical constant selected according to the type of the subpixels 100 R, 100 G, and 100 B. Since the phase shift by the first electrode (also serving as a reflector) 202 is different, it is possible to set an optical distance that generates optimum resonance for the wavelength of light according to the color to be displayed.
  • the first electrode (also serving as a reflector) 202 can be made of a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing these as a main component.
  • the first electrode (also serving as a reflector) 202 R of the subpixel 100 R may be formed of copper (Cu)
  • the first electrode (also serving as a reflector) 202 G of the subpixel 100 G and the first electrode (also serving as a reflector) 202 B of the subpixel 100 B may be formed of aluminum.
  • the materials and the like constituting the second electrode 206 are similar to the contents described in the first example, and thus the description thereof will be omitted.
  • FIG. 31 is a schematic cross-sectional view for explaining a seventh example of the resonator structure.
  • the seventh example basically, the sixth example is applied to the subpixels 100 R and 100 G, and the first example is applied to the subpixel 100 B. Also in this configuration, it is possible to set an optical distance that causes optimum resonance for the wavelength of light according to the color to be displayed.
  • the first electrodes (also serving as reflectors) 202 R and 202 G used for the subpixels 100 R and 100 G can be made of a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing these as a main component.
  • the technology according to the present disclosure may be applied to a display unit or the like of various electronic devices. Therefore, an example of an electronic device to which the present technology can be applied will be described below.
  • FIG. 32 A is a front view illustrating an example of an external appearance of a digital still camera 500
  • FIG. 32 B is a rear view illustrating an example of an external appearance of the digital still camera 500
  • the digital still camera 500 is of a lens interchangeable single lens reflex type, and includes an interchangeable imaging lens unit (interchangeable lens) 512 substantially at the center in front of a camera main body portion (camera body) 511 , and a grip portion 513 to be held by a photographer on the front left side.
  • interchangeable imaging lens unit interchangeable lens
  • a monitor 514 is provided at a position shifted to the left from the center of the back surface of the camera main body portion 511 .
  • An electronic view finder (eyepiece window) 515 is provided above the monitor 514 . By looking into the electronic view finder 515 , the photographer can determine the composition by visually recognizing the optical image of the subject guided from the imaging lens unit 512 .
  • the monitor 514 and the electronic view finder 515 the light emitting device 10 according to the embodiment of the present disclosure can be used.
  • FIG. 33 is an external view of a head mounted display 600 .
  • the head mounted display 600 includes, for example, ear hooking portions 612 to be worn on the head of the user on both sides of the glass-shaped display unit 611 .
  • the light emitting device 10 according to the embodiment of the present disclosure can be used as the display unit 611 .
  • the main body portion 632 is connected to the arm 633 and glasses 630 . Specifically, an end portion of the main body portion 632 in the long side direction is coupled to the arm 633 , and one side of the side surface of the main body portion 632 is coupled to the glasses 630 via a connecting member. Note that the main body portion 632 may be directly mounted on the head of the human body.
  • the main body portion 632 incorporates a control board for controlling the operation of the see-through head mounted display 634 and a display unit.
  • the arm 633 connects the main body portion 632 and the lens barrel 631 and supports the lens barrel 631 . Specifically, the arm 633 is coupled to the end portion of the main body portion 632 and the end portion of the lens barrel 631 , and fixes the lens barrel 631 . Furthermore, the arm 633 incorporates a signal line for communicating data related to an image provided from the main body portion 632 to the lens barrel 631 .
  • the lens barrel 631 projects image light provided from the main body portion 632 via the arm 633 toward the eyes of the user wearing the see-through head mounted display 634 through the eyepiece.
  • the light emitting device 10 according to the embodiment of the present disclosure can be used for the display unit of the main body portion 632 .
  • FIG. 35 illustrates an example of an external appearance of television apparatus 710 .
  • the television apparatus 710 includes, for example, a video display screen unit 711 including a front panel 712 and a filter glass 713 , and the video display screen unit 711 includes the light emitting device 10 according to the embodiment of the present disclosure.
  • FIG. 36 illustrates an example of an external appearance of a smartphone 800 .
  • the smartphone 800 includes a display unit 802 that displays various types of information, an operation unit including a button that receives an operation input by the user, and the like.
  • the above-described display unit 802 can be the light emitting device 10 according to the present embodiment.
  • FIGS. 37 A and 37 B are diagrams illustrating an internal configuration of an automobile having a light emitting device 10 according to an embodiment of the present disclosure as a display device. Specifically, FIG. 37 A is a diagram illustrating a state of the inside of the automobile from the rear to the front of the automobile, and FIG. 37 B is a diagram illustrating a state of the inside of the automobile from the oblique rear to the oblique front of the automobile.
  • the automobile illustrated in FIGS. 37 A and 37 B has a center display 911 , a console display 912 , a head-up display 913 , a digital rear mirror 914 , a steering wheel display 915 , and a rear entertainment display 916 .
  • the light emitting device 10 according to the embodiments of the present disclosure can be applied to some or all of these displays.
  • the center display 911 is disposed on a center console 907 at a position facing the driver's seat 901 and a passenger seat 902 .
  • FIGS. 37 A and 37 B illustrate an example of the center display 911 having a horizontally long shape extending from the driver's seat 901 side to the passenger seat 902 side, but the screen size and the arrangement place of the center display 911 are arbitrary.
  • the center display 911 can display information detected by various sensors (not illustrated). As a specific example, the center display 911 can display a captured image captured by an image sensor, a distance image to an obstacle in front of or on a side of the automobile measured by a time of flight (ToF) sensor, a passenger's body temperature detected by an infrared sensor, and the like.
  • the center display 911 can be used to display, for example, at least one of safety related information, operation related information, a life log, health related information, authentication/identification related information, and entertainment related information.
  • the safety related information is information such as doze detection, looking-away detection, mischief detection of a child riding together, presence or absence of wearing of a seat belt, and detection of leaving of an occupant, and is information detected by, for example, a sensor (not illustrated) superimposed on the back side of the center display 911 .
  • the operation related information detects a gesture related to the operation of the occupant using the sensor.
  • the sensed gesture may include the operation of various equipment in the automobile.
  • the above-described sensor detects an operation of an air conditioning facility, a navigation device, an audio/visual (AV) device, a lighting device, or the like.
  • the life log includes a life log of all the occupants.
  • the life log includes an action record of each occupant in the vehicle.
  • the health related information detects the body temperature of the occupant using the temperature sensor, and estimates the health condition of the occupant on the basis of the detected body temperature.
  • the face of the occupant may be imaged using an image sensor, and the health condition of the occupant may be estimated from the imaged facial expression.
  • a conversation may be made with the occupant in an automatic voice, and the health condition of the occupant may be estimated on the basis of the answer content of the occupant.
  • the authentication/identification related information includes a keyless entry function of performing face authentication using a sensor, an automatic adjustment function of a seat height and a position in face identification, and the like.
  • the entertainment related information includes a function of detecting operation information of the AV device by the occupant using the sensor, a function of recognizing the face of the occupant by the sensor and providing content suitable for the occupant by the AV device, and the like.
  • the console display 912 can be used to display the life log information, for example.
  • the console display 912 is disposed near a shift lever 908 of the center console 907 between the driver's seat 901 and the passenger seat 902 .
  • the console display 912 can also display information sensed by various sensors (not illustrated).
  • the console display 912 may display an image of the periphery of the vehicle captured by the image sensor, or may display a distance image to an obstacle in the periphery of the vehicle.
  • the head-up display 913 is virtually displayed behind a windshield 904 in front of the driver's seat 901 .
  • the head-up display 913 can be used to display, for example, at least one of safety related information, operation related information, a life log, health related information, authentication/identification related information, and entertainment related information. Since the head-up display 913 is virtually arranged in front of the driver's seat 901 in many cases, the head-up display 913 is suitable for displaying information directly related to the operation of the automobile such as the speed of the automobile and the remaining amount of fuel (battery).
  • the digital rear mirror 914 can display not only the rear of the automobile but also the state of the occupant in the back seat, and thus can be used to display the life log information, for example, by disposing a sensor (not illustrated) to overlap the back surface side of the digital rear mirror 914 .
  • the steering wheel display 915 is arranged near the center of a steering wheel 906 of the automobile.
  • the steering wheel display 915 can be used to display, for example, at least one of safety related information, operation related information, a life log, health related information, authentication/identification related information, and entertainment related information.
  • life log information such as the body temperature of the driver, or for displaying information regarding the operation of an AV device, an air conditioning facility, or the like.
  • the rear entertainment display 916 is attached to the back side of the driver's seat 901 and the passenger seat 902 , and is for viewing by an occupant in the back seat.
  • a light emitting device comprising a plurality of pixels arranged on a substrate

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