US20230223317A1 - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device Download PDF

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Publication number
US20230223317A1
US20230223317A1 US17/825,799 US202217825799A US2023223317A1 US 20230223317 A1 US20230223317 A1 US 20230223317A1 US 202217825799 A US202217825799 A US 202217825799A US 2023223317 A1 US2023223317 A1 US 2023223317A1
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Prior art keywords
resin
bonding material
copper
surface portion
plate layer
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Ryuichi Ishii
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Assigned to MITSUBISHI ELECTRIC CORPORATION reassignment MITSUBISHI ELECTRIC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ISHII, RYUICHI
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H01L23/3735—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
    • B23K35/302—Cu as the principal constituent
    • H01L21/56—
    • H01L23/3672—
    • H01L23/3736—
    • H01L23/42—
    • H01L23/46—
    • H01L25/18—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H01L2924/186—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/251—Organics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07355—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials

Definitions

  • the present disclosure relates to a resin-sealed semiconductor device.
  • a solder-bonding material including silver, copper, and bismuth is utilized so that the thermal resistance between the power module and the cooling device is reduced.
  • Patent Document 1 has disclosed a technology in which as an on-the-chip bonding material for bonging a lead frame to a semiconductor element in a power module, a solder-bonding material including antimony is utilized and the melting point of the on-the-chip bonding material is made higher than that of the module bonding material, so that when the power module is bonded to the cooling device with the module bonding material, the on-the-chip bonding material is prevented from remelting.
  • Patent Document 1 Japanese Patent No. 6877600
  • the present disclosure is to disclose a technology for solving the foregoing problems; the objective thereof is to provide a resin-sealed semiconductor device that realizes enhancement of the reliability and prolongation of the lifetime.
  • a resin-sealed semiconductor device disclosed in the present disclosure includes a power module and a cooling device that is bonded to the power module with a first bonding material made of a solder-bonding material; the power module includes
  • a second lead frame that is a main terminal bonded to the semiconductor element through the intermediary of a second bonding material
  • the resin-sealed semiconductor device is characterized
  • the second bonding material is made of a bonding material having a higher melting point than the first bonding material has
  • one of bonding surfaces in each of which the power module and the cooling device are bonded to each other with the first bonding material is the other surface portion of the copper plate, and the other one of the bonding surfaces is the surface portion, at the power module side, of the cooling device, and
  • the surface portion, at the power module side, of the cooling device is formed of copper or metal having solder wettability the same as or higher than solder wettability of copper.
  • the present disclosure makes it possible to obtain a resin-sealed semiconductor device that realizes enhancement of the reliability and prolongation of the lifetime.
  • FIG. 1 is a cross-sectional view of a resin-sealed semiconductor device according to Embodiment 1 ;
  • FIG. 2 is a cross-sectional view of a resin-sealed semiconductor device according to Embodiment 2 ;
  • FIG. 3 is a plan view of the resin-sealed semiconductor device according to Embodiment 2 ;
  • FIG. 4 is a cross-sectional view of a resin-sealed semiconductor device that is a basis of the present disclosure.
  • FIG. 4 is a cross-sectional view of the resin-sealed semiconductor device that is a basis of the present disclosure.
  • a resin-sealed semiconductor device 100 includes a power module 101 and a cooling device 11 .
  • the power module 101 has a semiconductor element 1 as a switching element, a semiconductor element 2 as a rectifying element, a copper heat spreader 3 , a first copper lead frame 6 , which is an input/output terminal, a second copper lead frame 5 , which is a main terminal, a resin insulating layer 7 , a copper plate 8 , and a molding resin 9 .
  • the semiconductor element 1 and the semiconductor element 2 are bonded to one surface portion of the heat spreader 3 through the intermediary of an under-the-chip bonding material (unillustrated).
  • the first lead frame 6 is bonded to the surface portion in the end portion of the heat spreader 3 by use of a lead bonding material (unillustrated).
  • the second lead frame 5 is bonded to respective active planes of the semiconductor element 2 and the semiconductor element 1 by use of on-the-chip bonding materials 41 and 42 , as second bonding materials.
  • the molding resin 9 contains and seals the semiconductor element 1 , the semiconductor element 2 , the heat spreader 3 , part of the first lead frame 6 , part of the second lead frame 5 , the resin insulating layer 7 , and the copper plate 8 .
  • the other surface portion, of the copper plate 8 that faces the one surface portion thereof is exposed from the bottom surface portion of the molding resin 9 of the power module 101 .
  • the exposed surface portion of the copper plate 8 is bonded to a nickel plate layer 14 applied to one surface portion of the cooling device 11 , with a module bonding material 10 as a first bonding material.
  • the power module 101 and the cooling device 11 are integrally bonded to each other, so that the resin-sealed semiconductor device is formed.
  • the bonding surface between the power module 101 and the cooling device 11 is formed of a combination of copper and a nickel plate, so that the quality of the soldering is raised.
  • the nickel plate layer 14 is applied to the surface portion, at the side to be bonded to the power module, of the cooling device 11 , it is required to perform soldering work with the module bonding material 10 , by use of formic-acid reduction reflow facilities or by use of flux having extremely high activation power; however, even when any of these soldering works is performed, there occurs a variation in the solder wettability for the module bonding material 10 , among the individual resin-sealed semiconductor devices 100 .
  • a void occurs in the solder-bonding material included in the module bonding material 10 and hence the thermal resistance increases, resulting in deterioration of the quality of the resin-sealed semiconductor device 100 ; thus, the reliability of the resin-sealed semiconductor device 100 may be lowered.
  • solder-bonding material included in the module bonding material 10 is weak, repetition of temperature change may cause a crack to occur in the solder-bonding material and hence the lifetime of the resin-sealed semiconductor device 100 may be shortened.
  • FIG. 1 is a cross-sectional view of the resin-sealed semiconductor device according to Embodiment 1 .
  • the resin-sealed semiconductor device 100 includes the power module 101 and the cooling device 11 . As described later, the power module 101 and the cooling device 11 are bonded to each other with the module bonding material 10 as the first bonding material.
  • the power module 101 has the semiconductor element 1 as a switching element, the semiconductor element 2 as a rectifying element, the heat spreader 3 , the first lead frame 6 , the second lead frame 5 , a resin insulating layer 7 in which the resin contains inorganic fillers, the copper plate 8 , and the molding resin 9 .
  • the semiconductor element 1 as a switching element is bonded to one surface portion of the heat spreader 3 through the intermediary of an under-the-chip bonding material (unillustrated).
  • the semiconductor element 2 as a rectifying element is bonded to the one surface portion of the heat spreader 3 through the intermediary of an under-the-chip bonding material (unillustrated).
  • the other surface portion, of the heat spreader 3 that faces the one surface portion thereof is fixed to one surface portion of the copper plate 8 through the intermediary of the resin insulating layer 7 .
  • the other surface portion, of the copper plate 8 that faces the one surface portion thereof is exposed from the bottom surface portion of the molding resin 9 of the power module 101 , and is bonded, with the module bonding material 10 , to a copper plate layer 12 as a surface plate layer applied to one surface portion of the cooling device 11 .
  • one bonding surface is the other surface portion of the copper plate 8 and the other bonding surface is the copperplate layer 12 as a surface plate layer applied to the surface portion, at the power module side, of the cooling device.
  • the power module 101 and the cooling device 11 are integrally bonded to each other, so that the resin-sealed semiconductor device 100 is formed.
  • the first lead frame 6 is integrally bonded to the surface portion, at an end portion, of the heat spreader 3 with a lead bonding material (unillustrated).
  • the lead bonding material is formed of a solder-bonding material in order to secure electric connection between the heat spreader 3 and the first lead frame 6 .
  • metal bonding through ultrasound may be utilized.
  • the second lead frame 5 is bonded to respective active planes of the semiconductor element 2 and the semiconductor element 1 by use of on-the-chip bonding materials 41 and 42 , as second bonding materials.
  • the molding resin 9 contains the foregoing semiconductor elements 1 and 2 , the heat spreader 3 , the under-the-chip bonding material, part of the first lead frame 6 , the lead bonding material, part of the second lead frame 5 , the on-the-chip bonding materials 41 and 42 , the resin insulating layer 7 , and part of the copper plate 8 , and seals these materials from the outside.
  • the semiconductor element 1 in the power module 101 is formed of, for example, a semiconductor switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal Oxide Semiconductor Field Effect Transistor).
  • An IGBT is a device for driving a load with a large current.
  • each of the semiconductor element 1 and the semiconductor element 2 is formed of, for example, silicon (Si); however it is not limited to silicon.
  • a semiconductor chip included in each of the semiconductor element 1 and the semiconductor element 2 is formed of any material selected from a group including silicon carbide (SiC), gallium nitride-based material (for example, gallium nitride (GaN)), and diamond.
  • each of the semiconductor element 1 and the semiconductor element 2 is a so-called wide-bandgap semiconductor material having a wider bandgap than silicon has.
  • Each of the semiconductor element 1 and the semiconductor element 2 formed by use of such a wide-bandgap semiconductor material can be applied to high-temperature operation, in comparison with a semiconductor element formed by use of a silicon semiconductor material such as a MOSFET.
  • a wide-bandgap semiconductor material is suitable for a large current to flow therein.
  • the second lead frame 5 which is a main terminal, is bonded to electrodes on respective active planes, as surface portions, of the semiconductor element 2 and the semiconductor element 1 through the intermediary of the on-the-chip bonding materials 41 and 42 , respectively, as the second bonding materials formed of a solder-bonding material.
  • High-electric-conductivity metal is utilized for each of the heat spreader 3 , the first lead frame 6 , and the second lead frame 5 .
  • a copper material is most suitable in terms of the electric resistance, the workability, the cost, and the like.
  • the copper material here, signifies pure copper or copper alloy whose main component is copper.
  • the whole power module 101 is sealed with the molding resin 9 .
  • the molding resin 9 having a linear-expansion coefficient close to the respective linear-expansion coefficients of the heat spreader 3 , the first lead frame 6 , and the second lead frame 5 . Accordingly, because the linear-expansion coefficient of pure copper is from 16 [ppm/K] to 17 [ppm/K], it is desirable that the linear-expansion coefficient of the molding resin 9 is from 15 [ppm/K] to 18 [ppm/K].
  • the resin insulating layer 7 not only secures an electrical insulation property but also has a heat radiation property for transferring and radiating heat generated at a time when the semiconductor element 1 and the semiconductor element 2 operate to the cooling device 11 .
  • the resin insulating layer 7 is obtained by filling an inorganic filler, as an inorganic filling material having a high thermal conductivity and an insulation property, into a thermosetting resin, and bonds the heat spreader 3 to the copper plate 8 through the thermosetting action of the resin.
  • the power module 101 is bonded to the copper plate layer 12 , as a surface plate layer of the cooling device 11 having radiating fins (unillustrated), with the module bonding material 10 as the first bonding material .
  • the cooling device 11 that needs to have a higher cooling performance, any of a water-cooled cooling device and an air-cooled cooling device may be adopted. It is desirable that the cooling device 11 is formed of any material selected from a group including copper, aluminum, and copper alloy or aluminum alloy. Among them, as the material of the cooling device 11 , aluminum that is light and superior in the workability or alloy including aluminum is suitable.
  • the bonding portion of the cooling device 11 needs to have a high solder wettability, because the power module 101 is bonded to the cooling device 11 with the module bonding material 10 . Accordingly, it is desirable that copper is utilized as the material of the main body of the cooling device 11 ; however, in the case where aluminum or alloy including aluminum is utilized as the material of the main body of the cooling device 11 , it is optimum that the surface plate layer is the copper plate layer 12 . It is optimum that copper plating is not directly applied to aluminum or alloy including aluminum but the nickel plate layer 13 as a base plate layer is applied thereto in order to raise the plating adhesiveness and the solder wettability of the surface.
  • the nickel plate layer 13 as a base plate layer and the copperplate layer 12 as a surface plate layer are applied to the one surface portion of the cooling device 11 ; two or more radiating fins (unillustrated) are provided in the other surface portion, at the anti-power module side, of the cooling device 11 .
  • the cooling device 11 is formed of metal heat sinks each having the shape of a flat plate; however, it may be allowed that the cooling device 11 is a liquid-cooled cooling device in which a flow path for making cooling liquid flow is provided.
  • the semiconductor element 1 as a switching element and the semiconductor element 2 as a rectifying element are bonded onto the one surface portion of the heat spreader 3 in such a way as to be spaced apart from each other through the intermediary of an under-the-chip bonding material (unillustrated).
  • the semiconductor element 1 as a switching element is formed of, for example, silicon; a semiconductor chip in which an IGBT is mounted is utilized as the semiconductor element 1 .
  • the semiconductor 2 as a rectifying element is formed of, for example, silicon; a semiconductor chip in which a diode is mounted is utilized as the semiconductor element 2 .
  • the under-the-chip bonding material is any bonding material selected from a group including a solder-bonding material, a sinterable filler whose main component is silver, a brazing material whose main component is silver, a material obtained by scattering copper into tin, and a gold-based alloy, such as a gold-tin alloy or a gold-germanium alloy, whose main component is gold.
  • a solder-bonding material a sinterable filler whose main component is silver
  • a brazing material whose main component is silver
  • a gold-based alloy such as a gold-tin alloy or a gold-germanium alloy
  • the first lead frame 6 which is an input/output terminal, is bonded to the surface portion in the end portion of the heat spreader 3 by use of a lead bonding material (unillustrated).
  • the second lead frame 5 which is a main terminal, is bonded to the active plane of the semiconductor element 1 as a switching element by use of the on-the-chip bonding material 42 and to the active plane of the semiconductor element 2 as a rectifying element by use of the on-the-chip bonding material 41 .
  • a lead bonding material (unillustrated) made of a solder-bonding material is utilized in the connection between the heat spreader 3 and the first lead frame 6 ; however, it may be allowed that another bonding method such as ultrasound bonding or welding is utilized.
  • a solder-bonding material made of constant-thickness ribbon solder is utilized, as the on-the-chip bonding materials 41 and 42 , in the bonding between the second lead frame 5 and semiconductor elements 1 and 2 .
  • solder-bonding material having a melting point higher than that of the module bonding material 10 is utilized so that each of the lead bonding material and the on-the-chip bonding materials 41 and 42 does not remelt even at the temperature of a second reflow process where the power module 101 is solder-bonded with the module bonding material 10 ; thus, it is optimum to utilize a solder-bonding material that includes antimony and whose solidus (melting point) is substantially 240° C.
  • each of the on-the-chip bonding materials 41 and 42 is a bonding material, such as a solder-bonding material or sintered silver, including another physical property, as long as it does not remelt even at the temperature of the second reflow process.
  • the molding resin 9 made of a thermosetting resin seals the semiconductor elements 1 and 2 , the heat spreader 3 , the under-the-chip bonding material, part of the first lead frame 6 , the lead bonding material, part of the second lead frame 5 , the on-the-chip bonding materials 41 and 42 as the second bonding materials, the resin insulating layer 7 , and the periphery of part of the copper plate 8 .
  • the molding is performed in such a way that the surface portion, at the anti-resin insulating layer 7 side, of the copper plate 8 is exposed from the molding resin 9 .
  • the resin insulating layer 7 is formed of a material having a heat-radiation property, an insulation property, and an adhesive property, and has a structure in which inorganic powder fillers such as high-heat-conductivity ceramic particles are contained in a thermosetting resin such as an epoxy resin.
  • a ceramic particle such as aluminum nitride, silicon nitride, boron nitride, aluminum oxide (alumina), silicon oxide (silica), magnesium oxide, zinc oxide, or titanium oxide is suitable.
  • any of these inorganic filling materials is utilized alone or two or more thereof are utilized in a mixed manner.
  • the resin insulating layer 7 whose base is a resin material also has a function as an adhesive material. Accordingly, when the molding resin 9 is thermally cured, the resin insulating layer 7 make the heat spreader 3 and the copper plate 8 bonded to each other in such a way that they adhere to each other. Thus, it is not required to apply an adhesive material to one surface portion and the other surface portion of the resin insulating layer 7 .
  • the adhesive material may cause the thermal resistance to increase; however, because no adhesive material is applied to the one surface portion and the other surface portion, the thermal resistance between the resin insulating layer 7 and the heat spreader 3 , and eventually, the thermal resistance between the resin insulating layer 7 and the copper plate 8 and thermal resistance between the resin insulating layer 7 and the molding resin 9 can be suppressed from increasing; therefore, a module having a high heat-radiation performance can be obtained.
  • the molding resin 9 does not need to have a high thermal conductivity; therefore, as the inorganic filling material to be contained in the thermosetting resin such as an epoxy resin, fused silica is optimum among silicon oxides (silicas) that each have high fluidity when being contained in a thermosetting resin and whose linear-expansion coefficients are readily adjusted.
  • the thermosetting resin such as an epoxy resin
  • fused silica is optimum among silicon oxides (silicas) that each have high fluidity when being contained in a thermosetting resin and whose linear-expansion coefficients are readily adjusted.
  • the power module 101 and the cooling device 11 are bonded to each other by use of the module bonding material 10 as the first bonding material.
  • the solder reflow it is required to heat the power module 101 and the cooling device 11 up to a temperature range in which the module bonding material 10 is fused.
  • the solder-bonding material utilized in the power module 101 may be fused; provided the solder-bonding material is fused, the effect of volume expansion in which a solid changes into a liquid may cause a crack to occur in the molding resin 9 . Therefore, it is required to provide a difference between the melting point of the bonding material such as the solder-bonding material to be utilized inside the power module 101 and the melting point of the module bonding material 10 to be utilized to bond the cooling device 11 to the power module 101 .
  • the melting-point differences between the module bonding material 10 and the on-the-chip bonding materials 41 and 42 and between the module bonding material 10 and the lead bonding material (unillustrated) become substantially 30° C.
  • low-melting-point solder in which tin contains silver, copper, and bismuth In comparison with low-melting-point solder in which tin contains silver, copper, and bismuth, low-melting-point solder in which tin contains silver, copper, bismuth, and indium has a low liquidus and a high strength, and it is made possible to reduce the incidence of a void by adjusting the respective content ratios of bismuth and indium; therefore, there is demonstrated an effect that the reliability for a temperature cycle is further raised.
  • the respective bonding surfaces are formed of high-solder-wettability metal materials and flux for raising the solder wettability is indispensable.
  • copper is metal having high solder wettability
  • one of the bonding surfaces where the power module 101 and the cooling device 11 are bonded to each other with the module bonding material 10 as the first bonding material is the other surface portion of the copperplate 8
  • the other one of the bonding surfaces is the surface portion, at the power module side, of the cooling device 11
  • the surface portion, at the power module side, of the cooling device 11 is formed of copper or metal having solder wettability the same as or higher than the solder wettability of copper.
  • solder wettability can be raised; concurrently, it is made possible to provide a small-size resin-sealed semiconductor device having a low thermal resistance, a high quality, and a high reliability.
  • a metal plate layer such as a tin plate layer, that has solder wettability the same as or higher than the solder wettability of copper.
  • the copperplate layer 12 as a surface plate layer and the nickel plate layer 13 as a base plate layer are applied to the area in the surface portion, at the power module side, of the cooling device 11 ; the foregoing are has a size the same as or larger than the outer-shape size of the power module 101 . Accordingly, the power module 101 is bonded to the area to which the copper plate layer 12 as a surface plate layer and the nickel plate layer 13 as a base plate layer are applied, without extending beyond the area.
  • FIG. 2 is a cross-sectional view of the resin-sealed semiconductor device according to Embodiment 2;
  • FIG. 3 is a plan view of the resin-sealed semiconductor device according to Embodiment 2.
  • FIG. 3 illustrates a state where three resin-sealed semiconductor devices 100 , applied to a three-phase electric-power conversion apparatus, that correspond to the three respective phases are arranged side by side in a plane manner.
  • the difference between the resin-sealed semiconductor device according to Embodiment 2 and the resin-sealed semiconductor device according to Embodiment 1 is only the size of the area to which the copper plate layer 12 as a surface plate layer and the nickel plate layer 13 as a base plate layer are applied.
  • the copper plate layer 12 as a surface plate layer and the nickel plate layer 13 as a base plate layer are each formed in the outer shape of a plane having one and the same size; they are formed in the outer shape of a plane having a size larger than that of the outer shape of the module bonding material 10 as the first bonding material.
  • Aluminum, which is a material forming the cooling device 11 is exposed in the area of the cooling device 11 to which neither the copper plate layer 12 nor the nickel plate layer 13 is applied.
  • Each of the copper plate layer 12 and the nickel plate layer 13 is formed in a rectangular manner, for example, in the shape of a rectangle in such a way that two side portions 121 and 122 thereof facing each other are situated within the plane outer shape of the molding resin 9 .
  • Three power modules 101 arranged side by side in a plane manner are bonded to the surface portion of the cooling device 11 ; each of the copper plate layer 12 and the nickel plate layer 13 are continuously formed in such a way as to stride over the three power modules 101 ; the copper plate layer 12 is formed in such a way that the other two side portions 123 and 124 , which are each perpendicular to the two side portions 121 and 122 and face each other, are situated within the plane outer shape of the molding resin 9 of the corresponding power module 101 .
  • solder ball Because in the second reflow process where the power module 101 is bonded to the cooling device 11 with the module bonding material 10 , flux for facilitating the solder wettability is utilized, the activator or gas in the flux causes a solder ball to occur. This solder ball scatters to the surface portion of the cooling device 11 ; in the case where the destination of the scattering is a place where the solder wettability is provided, the solder ball, as a conductive foreign material, melts and adheres to the surface portion of the cooling device 11 and hence the insulation property may be deteriorated. However, because aluminum does not have any solder wettability, it is made possible that even when a solder ball adheres thereto, the solder ball can readily be removed through cleaning.
  • the three power modules 101 corresponding to the three respective phases are arranged side by side in a plane manner in such a way as to be close to the surface portion of the cooling device 11 ; therefore, in comparison with the method in which the area of the copper plate layer 12 as a surface plate layer is divided into respective areas for the power modules 101 , the method in which the copperplate layer 12 has the area covering the whole adjacent power modules 101 can suppress the plating cost.
  • solder ball may melt and adhere to a place between the adjacent power modules 101 , the insulation property is not affected by the solder ball, because each of the side-surface portion of the power module 101 , from which the first lead frame 6 is pulled out, and the side-surface portion of the power module 101 , from which the second lead frame 5 is pulled out, is a different side-surface portion where the foregoing place is situated.
  • the method in which a plate layer is applied to the whole cooling device 11 and then the area other than the copper plate layer 12 , which is a surface plate layer, is cut and removed is inexpensive; however, there maybe utilized a method in which at a time of plating, partial plating is performed while masking an area where no plating is required.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
US17/825,799 2022-01-13 2022-05-26 Resin-sealed semiconductor device Abandoned US20230223317A1 (en)

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JP2022003454 2022-01-13

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JP (1) JP7693024B2 (https=)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230402293A1 (en) * 2022-06-09 2023-12-14 Skyworks Solutions, Inc. Methods for manufacturing electronic packages and electronic assemblies

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JPH05345969A (ja) * 1992-06-12 1993-12-27 Kobe Steel Ltd 半田付け性及びめっき密着性に優れたＡｌ系合金金属材
JP4159897B2 (ja) * 2003-02-26 2008-10-01 東洋鋼鈑株式会社 ハンダ性に優れた表面処理Ａｌ板、それを用いたヒートシンク、およびハンダ性に優れた表面処理Ａｌ板の製造方法
JP5344888B2 (ja) * 2008-11-06 2013-11-20 三菱電機株式会社 半導体装置
JP6877600B1 (ja) * 2020-01-16 2021-05-26 三菱電機株式会社 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230402293A1 (en) * 2022-06-09 2023-12-14 Skyworks Solutions, Inc. Methods for manufacturing electronic packages and electronic assemblies
US20230402294A1 (en) * 2022-06-09 2023-12-14 Skyworks Solutions, Inc. Methods for mounting an electronic package to a circuit board

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WO2023136264A1 (ja) 2023-07-20
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JPWO2023136264A1 (https=) 2023-07-20
CN116435271A (zh) 2023-07-14

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