US20210351065A1 - Interconnection structure with sidewall protection layer - Google Patents
Interconnection structure with sidewall protection layer Download PDFInfo
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- US20210351065A1 US20210351065A1 US17/383,299 US202117383299A US2021351065A1 US 20210351065 A1 US20210351065 A1 US 20210351065A1 US 202117383299 A US202117383299 A US 202117383299A US 2021351065 A1 US2021351065 A1 US 2021351065A1
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Definitions
- a dual damascene process is a technique for forming interconnections in semiconductor devices. As the feature sizes get smaller, the dual damascene process provides a more exact dimensional control over small geometries. Therefore, the dual damascene process is suited for ultra large scale integrated (ULSI) circuit technology where more and more devices are being packed into the same or smaller areas in a semiconductor substrate.
- ULSI ultra large scale integrated
- FIGS. 1 to 14 are cross-sectional views of a method for manufacturing an interconnection structure at various stages in accordance with some embodiments of the present disclosure.
- first and second features are formed in direct contact
- additional features may be formed between the first and second features, such that the first and second features may not be in direct contact
- present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures.
- the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
- the apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- FIGS. 1 to 14 are cross-sectional views of a method for manufacturing an interconnection structure at various stages in accordance with some embodiments of the present disclosure.
- a liner layer 104 is formed on a non-insulator structure 102 .
- the non-insulator structure 102 refers to a structure formed of one or more non-insulator materials, polysilicon, metal, conductive materials, semiconductor materials or combinations thereof.
- the non-insulator structure 102 can serve as a gate electrode, a source/drain region of a semiconductor device, such as a fin field effect transistor (FinFET).
- FinFET fin field effect transistor
- the non-insulator structure 102 when the non-insulator structure 102 serves as the gate electrode of the FinFET, the non-insulator structure 102 may be formed by a gate last process.
- An exemplary gate last process may include forming a dummy gate structure including a material, such as polysilicon, on a semiconductor fin, forming spacers including a material, such as silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, beside the dummy gate structure, removing the dummy gate structure to form a trench between the spacers, and forming at least one metal layer into the trench between the spacers to from the non-insulator structure 102 .
- the metal layer may include a metal material suitable for forming the gate electrode or a portion thereof, including, work function layers, liner layers, interface layers, seed layers, adhesion layers, barrier layers and so on.
- the metal layer may include suitable metal, such as TiN, WN, TaN, or Ru, which performs in a p-type FinFET.
- the metal layer may include suitable metal, such as Ti, Ag, Al, TiAl, TiAlN, TiAlC, TiAlCN, TaC, TaCN, TaSiN, Mn, or Zr, which performs in an n-type FinFET.
- an exemplary formation process may include doping an n-type dopant, such as phosphorous, or a p-type dopant, such as boron, into at least one portion of the semiconductor fin not covered by the spacers and the gate electrode by using ion implantation.
- an n-type dopant such as phosphorous
- a p-type dopant such as boron
- Another exemplary process of forming the source/drain region may include forming at least one source/drain recess in the fin adjacent to the spacer, forming a seed layer in the source/drain recess, forming a relaxed epitaxial layer on the seed layer in the source/drain recess, forming an epitaxial layer on the relaxed epitaxial layer in the source/drain recess, so that the seed layer, the relaxed epitaxial layer and the epitaxial layer form a source/drain stressor to serve as the source/drain region.
- the source/drain stressor includes, for example, SiP, SiP or SiCP, which is able to induce a tensile strain to the n-type channel in the semiconductor fin.
- the source/drain stressor includes SiGe, which is able to induce a compressive strain to the p-type channel in the semiconductor fin.
- the liner layer 104 may serve as an etch stop layer, which protects the non-insulator structure 102 during an etching process for forming a via opening and/or an etching process of forming a trench opening.
- the liner layer 104 may include a dielectric material, such as silicon carbide, silicon nitride or carbon-doped silicon nitride.
- the liner layer 104 may include a conductive material, such as Ti, TiN, TiC, TiCN, Ta, TaN, TaC, TaCN, W, WN, WC, WCN, TiAl, TiAlN, TiAlC, or TiAlCN.
- the liner layer 104 may be deposited using chemical vapor deposition (CVD), high density plasma (HDP) CVD, sub-atmospheric CVD (SACVD), molecular layer deposition (MLD), sputtering, physical vapor deposition (PVD), plating, or other suitable techniques.
- CVD chemical vapor deposition
- HDP high density plasma
- SACVD sub-atmospheric CVD
- MLD molecular layer deposition
- PVD physical vapor deposition
- plating or other suitable techniques.
- the MLD process is carried out under a pressure less than about 10 mTorr and in the temperature range from about 350° C. to about 500° C.
- the silicon nitride is deposited on the top surface of the non-insulator structure 102 by reacting a silicon source compound and a nitrogen source.
- the silicon source compound provides silicon to the deposited silicon nitride and may include silane (SiH 4 ) or tetrathoxysilane (TEOS).
- the nitrogen source provides nitrogen to the deposited silicon nitride and may include ammonia (NH 3 ) or nitrogen gas (N 2 ).
- the carbon-doped silicon nitride is deposited on the top surface of the non-insulator structure 102 by reacting a carbon source compound, a silicon source compound, and a nitrogen source.
- the carbon source compound may include an organic compound, such as a hydrocarbon compound, e.g., ethylene (C 2 H 6 ).
- a first dielectric structure 106 is formed on the liner layer 104 and the non-insulator structure 102 .
- the first dielectric structure 106 may be an interlayer dielectric (ILD) layer that includes a dielectric material.
- the dielectric material may include tetrathoxysilane (TEOS), an extreme low-k (ELK) dielectric material, nitrogen-free anti-reflective coating (NFARC), silicon oxide, silicon nitride, silicon oxynitride, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), spin-on glass (SOG), fluorinated silica glass (FSG), carbon doped silicon oxide (e.g., SiCOH), Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, BCB (bis-benzocyclobutenes), polyimide, and/or combinations thereof.
- TEOS tetrathoxysilane
- ELK extreme low-k
- NFARC nitrogen-
- the ELK dielectric material has a dielectric constant less than, for example, about 2.5. It is understood that the first dielectric structure 106 may include one or more dielectric materials and/or one or more dielectric layers. In some embodiments, the first dielectric structure 106 may be deposited on the liner layer 104 by using, for example, CVD, HDP CVD, SACVD, spin-on, sputtering, or other suitable techniques.
- a mask layer 108 may be formed on the first dielectric structure 106 .
- the mask layer 108 has an opening.
- the opening of the mask layer 108 exposes a portion of the first dielectric structure 106 , so that an etching process can be performed to the exposed portion of the first dielectric structure 106 to form a via opening O 1 in a subsequent process.
- the mask layer 108 may be a hard mask, such as silicon nitride (Si 3 N 4 ), which has relatively high etching resistivity compared to the first dielectric structure 106 .
- Formation of the hard mask includes forming a hard mask layer on the first dielectric structure 106 and then patterned to form the hard mask with the image of the via opening O 1 .
- the mask layer 108 may be a photoresist layer. Formation of the mask layer 108 includes forming a photoresist layer on the first dielectric structure 106 and then patterned to form a photoresist mask with the image of the opening of the mask layer 108 .
- An Etching process is performed to the portion of the first dielectric structure 106 exposed by the mask layer 108 to form a via opening O 1 therein.
- the etching process of forming the via opening O 1 is stopped by the liner layer 104 , so that the via opening O 1 is present on the liner layer 104 in this step. In other words, the liner layer 104 is exposed by the via opening O 1 .
- the etching process may be a dry etching, wet etching and/or plasma etching process.
- the etching process of forming the via opening O 1 may employ a mixture of tetrafluoromethane (CF 4 ), trifluoromethane (CHF 3 ) and oxygen as the etching gases.
- a dummy structure 110 is at least formed in the via opening O 1 . More particularly, the dummy structure 110 is formed in the via opening O 1 and on a top surface of the mask layer 108 .
- the dummy structure 110 and the first dielectric structure 106 have different materials such that the dummy structure 110 may be selectively etched with respect to the first dielectric structure 106 in a subsequent process. More particularly, the dummy structure 110 and the first dielectric structure 106 have different etch properties.
- the dummy structure 110 may include photoresist or bottom antireflective coating (BARC).
- the dummy structure 110 may include a material having an etch selectivity different from an etch selectivity of the first dielectric structure 106 .
- Etch selectivity in this context is a ratio of an amount of an etch-target material etched away versus an amount of photoresist etched away in a single etching process.
- the first dielectric structure 106 may include tetrathoxysilane (TEOS), an extreme low-k (ELK) dielectric material, nitrogen-free anti-reflective coating (NFARC), or silicon oxide
- the dummy structure 110 may include the material different from the first dielectric material 106 , such as silicon nitride, so that the dummy structure 110 can be selectively etched with respect to the first dielectric structure 106 to leave the via opening O 1 in a subsequent process.
- the dummy structure 110 can be formed by a deposition process, such as, the CVD process.
- the mask layer 108 and a portion of the dummy structure 110 overlying the mask layer 108 are removed to expose the top surface 107 of the first dielectric structure 106 . After this removal process, a portion of the dummy structure 110 still remains in the via opening O 1 .
- This removal process can be implanted by, for example, a chemical-mechanical polishing (CMP) process.
- CMP chemical-mechanical polishing
- the CMP process removes the mask layer 108 and portions of the dummy structure 110 overlying the mask layer 108 and outside the via opening O 1 .
- the CMP process may stop when reaching the first dielectric structure 106 , so as to provide a substantially planar top surface 107 .
- An etch stop layer 112 is formed on the top surface 107 of the first dielectric structure 106 and a top surface 111 of the dummy structure 110 .
- the etch stop layer 112 protects the first dielectric structure 106 against a subsequent etching process of forming a trench opening thereon.
- the etch stop layer 112 and the first dielectric structure 106 have different etch properties, so that the etch stop layer 112 can be selectively etched with respect to the first dielectric structure 106 in a subsequent process.
- the etch stop layer 112 may include a dielectric material, such as silicon oxynitride, silicon carbide, silicon carbon oxynitride, silicon nitride, or carbon-doped silicon nitride.
- the etch stop layer 112 may be deposited using CVD, high density plasma (HDP) CVD, sub-atmospheric CVD (SACVD), molecular layer deposition (MLD), sputtering, physical vapor deposition (PVD), or other suitable techniques.
- the MLD process is carried out under a pressure less than about 10 mTorr and in the temperature range from about 350° C. to about 500° C.
- the silicon nitride is deposited on the top surface 107 of the first dielectric structure 106 and the top surface 111 of the dummy structure 110 by reacting a silicon source compound and a nitrogen source.
- the silicon source compound provides silicon to the deposited silicon nitride and may include silane (SiH 4 ) or tetrathoxysilane (TEOS).
- the nitrogen source provides nitrogen to the deposited silicon nitride and may include ammonia (NH 3 ) or nitrogen gas (N 2 ).
- the carbon-doped silicon nitride is deposited on the top surface 107 of the first dielectric structure 106 and the top surface 111 of the dummy structure 110 by reacting a carbon source compound, a silicon source compound, and a nitrogen source.
- the carbon source compound may include an organic compound, such as a hydrocarbon compound, e.g., ethylene (C 2 H 6 ).
- a second dielectric structure 114 is formed on the etch stop layer 112 .
- the second dielectric structure 114 and the etch stop layer 112 have different etch properties.
- the second dielectric structure 114 may include a material having an etch selectivity different from the etch selectivity of the etch stop layer 112 , so that the etch stop layer 112 can protect the underlying dummy structure 110 and the first dielectric structure 106 against the etching process performed to the second dielectric structure 114 in a subsequent process.
- the second dielectric structure 114 may include tetrathoxysilane (TEOS), an extreme low-k (ELK) dielectric material, nitrogen-free anti-reflective coating (NFARC), silicon oxide, silicon nitride, silicon oxynitride, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), spin-on glass (SOG), fluorinated silica glass (FSG), carbon doped silicon oxide (e.g., SiCOH), Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, BCB (bis-benzocyclobutenes), polyimide, and/or combinations thereof.
- TEOS tetrathoxysilane
- ELK extreme low-k
- NFARC nitrogen-free anti-reflective coating
- silicon oxide silicon nitride, silicon oxynitride
- PSG phosphosilicate glass
- BPSG borophosphosilicate glass
- SOG spin-on glass
- the ELK dielectric material has a dielectric constant less than, for example, about 2.5. It is understood that the second dielectric structure 114 may include one or more dielectric materials and/or one or more dielectric layers. In some embodiments, the second dielectric structure 114 may be deposited on the etch stop layer 112 by using, for example, CVD, HDP CVD, SACVD, spin-on, sputtering, or other suitable techniques.
- a mask layer 116 is formed over the second dielectric layer 114 .
- the mask layer 116 may include photoresist or other photo-sensitive materials.
- the mask layer 116 may include the deep UV photoresist or other phtoresists.
- the mask layer 116 may be formed by, for example, coating photoresist on the second dielectric structure 114 .
- the mask layer 116 is patterned to form a photoresist mask having an opening O 2 exposing a portion of the second dielectric structure 114 , so that an etching process can be performed to the exposed portion of the second dielectric structure 114 to form a trench opening in a later step.
- the mask layer 116 may be a hard mask, such as silicon nitride (Si 3 N 4 ), which has relatively high etching resistivity compared to the second dielectric structure 114 . Formation of the hard mask includes forming a hard mask layer on the second dielectric structure 114 and then patterned to form the hard mask with the image of the opening O 2 .
- a portion of the second dielectric structure 114 not covered by the mask layer 116 is removed to form a trench opening O 3 in the second dielectric structure 114 , and a portion of the etch stop layer 112 is exposed by the trench opening O 3 .
- the removal process can be an etching process, such as an anisotropic etching process.
- the second dielectric structure 114 is etched through to form the trench opening O 3 that exposes the etch stop layer 112 .
- the anisotropic etching process can be, for example, a CF 4 based or C 4 F 8 based dry etching process.
- the etch stop layer 112 can protect the underlying first dielectric structure 106 against this etching process of forming the trench opening O 3 because the etch stop layer 112 and the second dielectric structure 114 have different etch properties, and therefore, the etch stop layer 112 can prevent the underlying first dielectric structure 106 from over-etched, which may benefit the trench opening O 3 formed in a suitable shape and depth.
- the mask layer 116 can protect the underlying portion of the second dielectric structure 114 against the etching process of forming the trench opening O 3 , so that the trench O 3 can be formed with a pattern corresponding to the opening O 2 of the mask layer 116 . In other words, the mask layer 116 defines the pattern of the trench opening O 3 .
- a portion of the etch stop layer 112 exposed by the trench opening O 3 is removed to expose portions of the top surfaces 107 and 111 of the first dielectric structure 106 and the dummy structure 110 .
- the portion of the etch stop layer 112 underlying the trench opening O 3 can be removed by using a dry etching process, wet etching process, or combinations thereof.
- the removal process is a wet etching process, and since the first dielectric structure 106 and the etch stop layer 112 have different etch properties, the etch stop layer 112 can be selectively etched with respect to the first dielectric structure 106 , so that over-etching of the first dielectric structure 106 may be prevented from the etching process of removing the etch stop layer 112 .
- the dummy structure 110 is removed to expose the via opening O 1 .
- This removal process may include an etching process, such as a wet etching process.
- a wet etching process since the dummy structure 110 and the first dielectric structure 106 have different etch properties, the dummy structure 110 can be selectively etched with respect to the first dielectric structure 106 . Therefore, the shape or size of the via opening O 1 may not be modified by the etching process of removing the dummy structure 110 .
- the top surface 107 may not be recessed by the etching process of removing the dummy structure 110 , so that the over-etching of the first dielectric structure 106 can be prevented.
- the via opening O 1 is present between the trench opening O 3 and the liner layer 104 , and a width of the via opening O 1 is less than a width of the trench opening O 3 .
- the first dielectric structure 106 may serve as a lower dielectric layer having the via opening O 1 therein
- the second dielectric structure 114 may serve as an upper dielectric layer having the trench opening O 3 therein.
- the etch stop layer 112 is present between the lower dielectric layer and the upper dielectric layer.
- a protective layer 118 is at least formed on a portion of the top surface 107 of the first dielectric structure 106 exposed by the trench opening O 3 .
- the protective layer 118 is conformally formed on a top surface of the mask layer 116 , the exposed top surface 107 of the first dielectric structure 106 , a top surface of the liner layer 104 , an inner circumferential surfaces of the via opening O 1 , the opening O 2 and the trench opening O 3 .
- the protective layer 118 and the first dielectric structure 106 are made of different materials that have different etch properties and different adhesion abilities to a byproduct generated during a subsequent etching process performed to the liner layer 104 .
- the protective layer 118 may include a material having an etch selectivity different from the etch selectivity of the first dielectric structure 106 . Moreover, the materials of the protective layer 118 and the first dielectric structure 106 are determined such that the adhesion ability of the protective layer 118 to the byproduct of etching the liner layer 104 is weaker than the adhesion ability of the first dielectric structure 106 to the byproduct of etching the liner layer 104 .
- the protective layer 118 may include a dielectric material, such as silicon nitride (SiN) or silicon oxynitride (SiON), and the first dielectric structure 106 may include tetrathoxysilane (TEOS), an extreme low-k (ELK) dielectric material, nitrogen-free anti-reflective coating (NFARC), or silicon oxide, which is different from the protective layer 118 .
- TEOS silicon nitride
- ELK extreme low-k
- NFARC nitrogen-free anti-reflective coating
- silicon oxide silicon oxide
- the etch selectivity of the protective layer 118 is lower than the etch selectivity of the first dielectric structure 106 , so that the protective layer 118 is not easier to be etched compared to the first dielectric structure 106 , and therefore, the protective layer 118 can prevent the underlying first dielectric structure 106 from over-etched during the liner etching process.
- adhesion ability of the protective layer 118 to the byproduct of etching the liner layer 104 is weaker than the adhesion ability of the first dielectric structure 106 to the byproduct of etching the liner layer 104 , a portion of the protective layer 118 formed on a sidewall 109 of the via opening O 1 can prevent the byproduct of etching the liner layer 104 adhered to the sidewall 109 , so that a size of the via opening O 1 is not reduced by the byproduct adhered to the sidewall 109 .
- Adhesion ability to the byproduct in this context refers to the amount of the byproduct that can be adhered to per unit area of a surface.
- the adhesion ability of the protective layer 118 to the byproduct refers to the amount of the byproduct that can be adhered to per unit area of a surface of the protective layer 118 .
- the adhesion ability of the first dielectric structure 106 to the byproduct refers to the amount of the byproduct that can be adhered to per unit area of a surface of the first dielectric structure 106 .
- the protective layer 118 may be a silicon nitride layer formed by ALD.
- the ALD for forming the silicon nitride layer includes multiple silicon nitride deposition cycles. Each silicon nitride deposition cycle may include contacting the top surface of the mask layer 116 , the exposed top surface 107 of the first dielectric structure 106 , the top surface of the liner layer 104 , inner circumferential surfaces of the via opening O 1 , the opening O 2 and the trench opening O 3 with a silicon precursor, such that the silicon precursor adsorbs on these surfaces, and contacting these surfaces with a nitrogen precursor.
- the silicon nitride deposition cycle may be repeated as many times as to achieve a desired thickness and composition of a silicon nitride layer.
- This resulting silicon nitride layer serves as the protective layer 118 .
- the ALD process may benefit the control of the thickness of the protective layer 118 and thus benefit the control the critical dimension (CD) of the via opening O 1 and/or the trench opening O 3 .
- FIG. 12 A portion of the liner layer 104 underlying the via opening O 1 is removed to form an opening O 4 , which allows the non-insulator structure 102 exposed by the via opening O 1 and the opening O 4 .
- This removal process removes some portions of the protective layer 118 as well, and some portions of the protective layer 118 remain in the interconnection structure.
- a remaining portion of the protective layer 118 serves as a first protective layer 118 a that is present on at least one sidewall 115 of the trench opening O 3
- another remaining portion of the protective layer 118 serves as a second protective layer 118 b that is present on the sidewall 109 of the via opening O 1 .
- the first and second protective layers 118 a and 118 b originate from the protective layer 118 , the first and second protective layers 118 a and 118 b are made of substantially the same material, such as silicon nitride, silicon oxynitride or other suitable dielectric material.
- the first protective layer 118 a on the sidewall 115 of the trench opening O 3 may serve as a dielectric trench liner, and the second protective layer 118 b on the sidewall 109 of the via opening O 1 may serve as a dielectric via liner.
- a portion of the liner layer 104 remains between the second protective layer 118 b and the non-insulator structure 102 since the portion of the liner layer 104 is protected by the overlying second protective layer 118 b during the liner etching process.
- the second protective layer 118 b and the non-insulator structure 102 are separated. More particularly, the second protective layer 118 b and the non-insulator structure 102 are separated by the liner layer 104 .
- a portion of the liner layer 104 is present between the second protective layer 118 b and the non-insulator structure 102 .
- the second protective layer 118 b is adjacent to the liner layer 104 .
- the first protective layer 118 a is present on the top surface 107 of the first dielectric structure 106 and covers a side surface of the etch stop layer 112 .
- the portion of the liner layer 104 underlying the via opening O 1 can be removed by using a dry etching process.
- the dry etching process may have a high selectivity such that the dry etching process may stop at the non-insulator structure 102 .
- the dry etching process may be performed under a source power of about 150 to 220 W, and a pressure of about 10 to 45 mTorr, using CH 2 F 2 and Ar as etching gases.
- Unwanted etching of the non-insulator structure 102 may be reduced during the etching processes of forming the via and trench openings O 1 and O 3 due to the introduction of the liner layer 104 on the non-insulator structure 102 .
- the liner layer 104 may benefit forming a non-insulator structure 102 without a recess caused by the etching processes of forming the via and trench openings O 1 and O 3 , thereby enhancing the device performance.
- the protective layer 118 can protect the underlying portion of the first dielectric structure 106 from over-etched during the liner etching process.
- the protective layer 118 formed on the sidewall 109 of the via opening O 1 can prevent the byproduct of etching the liner layer 104 adhered to the sidewall 109 of the via opening O 1 , so that the size of the via opening O 1 is not reduced by the byproduct adhered to the sidewall 109 .
- a conductive structure 120 is at least formed in the via opening O 1 and the trench opening O 3 to electrically connect to the non-insulator structure 102 through the opening O 4 of the liner layer 104 .
- the first protective layer 118 a is present between the conductive structure 120 and the sidewall 115 of the trench opening O 3
- the second protective layer 118 b is present between the conductive structure 120 and the sidewall 109 of the via opening O 1 .
- the trench opening O 3 may not be formed into the non-insulator structure 102 due to over-etching, so that the conductive structure 120 filling the trench opening O 3 may not be formed in the non-insulator structure 102 , which may prevent undesired electrical connections between the conductive structure 120 and the non-insulator structure 102 .
- the second protective layer 118 b prevents reduction of the size of the via opening O 1 due to adhesion of the byproduct of etching the liner layer 104 , a portion of the conductive structure 120 can be formed in the via opening O 1 with a suitable size.
- the conductive structure 120 includes TiN, TaN, Ta, Ti, Hf, Zr, Ni, W, Co, Cu, or Al. In some embodiments, the conductive structure 120 may be formed by CVD, PVD, plating, ALD, or other suitable techniques. In some embodiments, the conductive structure 120 may include a laminate. The laminate may further include a barrier metal layer, a linear metal layer or a wetting metal layer. Further, the thickness of the conductive structure 120 depends on the depth of the via and trench openings O 1 and O 3 . The conductive structure 120 is deposited until the via and trench openings O 1 and O 3 are substantially filled or over-filled.
- the conductive structure 120 when the conductive structure 120 over-fills the trench opening O 3 , the conductive structure 120 may include a lower conductive portion 122 , a middle conductive portion 124 and an upper conductive portion 126 .
- the middle conductive portion 124 connects the lower conductive portion 122 and the upper conductive portion 126 .
- the lower conductive portion 122 fills the via opening O 1 .
- the lower conductive portion 122 is present in the via opening O 1 and opening O 4 of the liner layer 104 and on the second protective layer 118 b .
- the lower conductive portion 122 may be formed with a suitable size due to the relative weak adhesion ability of the second protective layer 118 b compared to the first dielectric structure 106 .
- the middle conductive portion 124 is present in the trench opening O 2 and on the first protective layer 118 a .
- the middle conductive portion 124 may not be formed in the non-insulator structure 102 due to over-etching of the trench opening O 3 because the etch stop layer 112 and the protective layer 118 protect the first dielectric structure 106 against over-etching.
- the middle conductive portion 124 of the conductive structure 120 and the etch stop layer 112 are arranged on the top surface 107 of the first dielectric structure 106 in a non-overlapping manner.
- the conductive structure 120 and the etch stop layer 112 are separated.
- the first protective layer 118 a present on the top surface 107 separates the etch stop layer 112 and the middle conductive portion 124 of the conductive structure 120 .
- the overfilling portion of the conductive structure 120 forms the upper conductive portion 126 overlying the mask layer 116 .
- a CMP process is performed to planarize the conductive structure 120 after filling the via and trench openings O 1 and O 3 .
- the CMP process removes the upper conductive portion 126 of the conductive structure 120 outside the via and trench openings O 1 and O 3 , and the CMP process may stop when reaching the second dielectric structure 114 and thus provide a substantially planar surface.
- the CMP process removes the mask layer 116 .
- the etch stop layer protects the first dielectric structure against the etching process of forming the trench opening O 3
- the protective layer protects the first dielectric structure against the etching process of removing a portion of the liner layer
- the first dielectric structure may not be over-etched.
- the protective layer prevents the byproduct of etching the liner layer from adhered to the sidewall of the via opening, the size of the via opening may not be reduced by the byproduct of etching the liner layer.
- a method includes depositing a first dielectric structure over a non-insulator structure, removing a portion of the first dielectric structure to form a via opening, filling the via opening with a dummy structure, depositing a second dielectric structure over the dummy structure, etching a portion of the second dielectric structure to form a trench over the dummy structure, removing the dummy structure from the via opening, and filling the trench opening and the via opening with a conductive structure, wherein the conductive structure is electrically connected to the non-insulator structure.
- the method further includes depositing an etch stop layer over the dummy structure, wherein the second dielectric structure is over the etch stop layer, removing a portion of the etch stop layer under the trench to expose a portion of the first dielectric structure, and depositing a protective layer over the exposed portion of the first dielectric structure.
- the method further includes depositing a liner layer on the non-insulator structure, and removing a portion of the liner layer between the via opening and the non-insulator structure.
- a portion of the protective layer remains on a sidewall of the via opening after removing the portion of the liner layer.
- a portion of the protective layer remains on a sidewall of the trench after removing the portion of the liner layer.
- a first portion and a second portion of the protective layer remain on sidewalls of the trench and the via opening after removing the portion of the liner layer, and the first and second portions of the protective layer are separated.
- the protective layer and the first dielectric structure have different etch selectivities.
- the etch stop layer and the first dielectric structure have different etch selectivities.
- depositing the protective layer is performed after removing the dummy structure.
- filling the via opening includes overfilling the via opening with the dummy structure, and removing a portion of the dummy structure over the first dielectric structure.
- a method includes depositing an etch stop layer over a first dielectric structure and a dummy structure in the first dielectric structure, depositing a second dielectric structure over the etch stop layer, etching the second dielectric structure to form a trench that exposes a portion of the etch stop layer, removing the exposed portion of the etch stop layer, removing the dummy structure to form a via opening in the first dielectric structure, and depositing a conductor in the trench and the via opening.
- removing the exposed portion of the etch stop layer comprises selectively etching the exposed portion of the etch stop layer with respect to the first dielectric structure.
- removing the dummy structure comprises selectively etching the dummy structure with respect to the first dielectric structure.
- etching the second dielectric structure is performed such that a width of the trench is greater than a width of the dummy structure.
- removing the exposed portion of the etch stop layer is performed until the dummy structure and the first dielectric structure are exposed.
- the method further includes performing a chemical-mechanical polishing process to remove a portion of the dummy structure over the first dielectric structure prior to forming the etch stop layer.
- a method includes depositing a first dielectric structure over a liner layer on a non-insulator structure, depositing a second dielectric structure over the first dielectric structure, etching the second dielectric structure to form a trench, etching the first dielectric structure to form a via opening under the trench, depositing a protective layer in the via opening and the trench, and etching the liner layer to expose the non-insulator structure, wherein a byproduct is generated by the etch operation, and the protective layer has weaker adhesion to the byproduct than that of the first dielectric structure.
- depositing the protective layer includes atomic layer deposition process.
- etching the liner layer includes removing a first portion of the protective layer in parallel with the etched liner layer, and remaining a second portion of the protective layer along a sidewall of the via opening and a sidewall of the trench.
- removing the first portion of the protective layer includes removing an upper part of the second portion of the protective layer to have a tapered profile.
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Abstract
Description
- The present application is a continuation application of U.S. application Ser. No. 15/851,661, filed Dec. 21, 2017, now U.S. Pat. No. 11,075,112, issued Jul. 27, 2021, which is a divisional application of U.S. application Ser. No. 14/985,157, filed Dec. 30, 2015, now U.S. Pat. No. 9,859,156, issued Jan. 2, 2018, all of which are herein incorporated by reference in their entirety.
- A dual damascene process is a technique for forming interconnections in semiconductor devices. As the feature sizes get smaller, the dual damascene process provides a more exact dimensional control over small geometries. Therefore, the dual damascene process is suited for ultra large scale integrated (ULSI) circuit technology where more and more devices are being packed into the same or smaller areas in a semiconductor substrate.
- Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
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FIGS. 1 to 14 are cross-sectional views of a method for manufacturing an interconnection structure at various stages in accordance with some embodiments of the present disclosure. - The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
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FIGS. 1 to 14 are cross-sectional views of a method for manufacturing an interconnection structure at various stages in accordance with some embodiments of the present disclosure. - Reference is made to
FIG. 1 . Aliner layer 104 is formed on anon-insulator structure 102. Thenon-insulator structure 102 refers to a structure formed of one or more non-insulator materials, polysilicon, metal, conductive materials, semiconductor materials or combinations thereof. Thenon-insulator structure 102 can serve as a gate electrode, a source/drain region of a semiconductor device, such as a fin field effect transistor (FinFET). - In some embodiments, when the
non-insulator structure 102 serves as the gate electrode of the FinFET, thenon-insulator structure 102 may be formed by a gate last process. An exemplary gate last process may include forming a dummy gate structure including a material, such as polysilicon, on a semiconductor fin, forming spacers including a material, such as silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, beside the dummy gate structure, removing the dummy gate structure to form a trench between the spacers, and forming at least one metal layer into the trench between the spacers to from thenon-insulator structure 102. The metal layer may include a metal material suitable for forming the gate electrode or a portion thereof, including, work function layers, liner layers, interface layers, seed layers, adhesion layers, barrier layers and so on. In some embodiments, the metal layer may include suitable metal, such as TiN, WN, TaN, or Ru, which performs in a p-type FinFET. In some alternative embodiments, the metal layer may include suitable metal, such as Ti, Ag, Al, TiAl, TiAlN, TiAlC, TiAlCN, TaC, TaCN, TaSiN, Mn, or Zr, which performs in an n-type FinFET. - In some embodiments, when the
non-insulator structure 102 serves as the source/drain region, an exemplary formation process may include doping an n-type dopant, such as phosphorous, or a p-type dopant, such as boron, into at least one portion of the semiconductor fin not covered by the spacers and the gate electrode by using ion implantation. Another exemplary process of forming the source/drain region may include forming at least one source/drain recess in the fin adjacent to the spacer, forming a seed layer in the source/drain recess, forming a relaxed epitaxial layer on the seed layer in the source/drain recess, forming an epitaxial layer on the relaxed epitaxial layer in the source/drain recess, so that the seed layer, the relaxed epitaxial layer and the epitaxial layer form a source/drain stressor to serve as the source/drain region. In some embodiments, the source/drain stressor includes, for example, SiP, SiP or SiCP, which is able to induce a tensile strain to the n-type channel in the semiconductor fin. In some other embodiments, the source/drain stressor includes SiGe, which is able to induce a compressive strain to the p-type channel in the semiconductor fin. - The
liner layer 104 may serve as an etch stop layer, which protects thenon-insulator structure 102 during an etching process for forming a via opening and/or an etching process of forming a trench opening. In some embodiments, theliner layer 104 may include a dielectric material, such as silicon carbide, silicon nitride or carbon-doped silicon nitride. In some embodiments, theliner layer 104 may include a conductive material, such as Ti, TiN, TiC, TiCN, Ta, TaN, TaC, TaCN, W, WN, WC, WCN, TiAl, TiAlN, TiAlC, or TiAlCN. In some embodiments, theliner layer 104 may be deposited using chemical vapor deposition (CVD), high density plasma (HDP) CVD, sub-atmospheric CVD (SACVD), molecular layer deposition (MLD), sputtering, physical vapor deposition (PVD), plating, or other suitable techniques. For example, in some embodiments, the MLD process is carried out under a pressure less than about 10 mTorr and in the temperature range from about 350° C. to about 500° C. In some embodiments, the silicon nitride is deposited on the top surface of thenon-insulator structure 102 by reacting a silicon source compound and a nitrogen source. The silicon source compound provides silicon to the deposited silicon nitride and may include silane (SiH4) or tetrathoxysilane (TEOS). The nitrogen source provides nitrogen to the deposited silicon nitride and may include ammonia (NH3) or nitrogen gas (N2). In some other embodiments, the carbon-doped silicon nitride is deposited on the top surface of thenon-insulator structure 102 by reacting a carbon source compound, a silicon source compound, and a nitrogen source. The carbon source compound may include an organic compound, such as a hydrocarbon compound, e.g., ethylene (C2H6). - A first
dielectric structure 106 is formed on theliner layer 104 and thenon-insulator structure 102. The firstdielectric structure 106 may be an interlayer dielectric (ILD) layer that includes a dielectric material. The dielectric material may include tetrathoxysilane (TEOS), an extreme low-k (ELK) dielectric material, nitrogen-free anti-reflective coating (NFARC), silicon oxide, silicon nitride, silicon oxynitride, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), spin-on glass (SOG), fluorinated silica glass (FSG), carbon doped silicon oxide (e.g., SiCOH), Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, BCB (bis-benzocyclobutenes), polyimide, and/or combinations thereof. The ELK dielectric material has a dielectric constant less than, for example, about 2.5. It is understood that the firstdielectric structure 106 may include one or more dielectric materials and/or one or more dielectric layers. In some embodiments, the firstdielectric structure 106 may be deposited on theliner layer 104 by using, for example, CVD, HDP CVD, SACVD, spin-on, sputtering, or other suitable techniques. - A
mask layer 108 may be formed on the firstdielectric structure 106. Themask layer 108 has an opening. The opening of themask layer 108 exposes a portion of the firstdielectric structure 106, so that an etching process can be performed to the exposed portion of the firstdielectric structure 106 to form a via opening O1 in a subsequent process. In some embodiments, themask layer 108 may be a hard mask, such as silicon nitride (Si3N4), which has relatively high etching resistivity compared to the firstdielectric structure 106. Formation of the hard mask includes forming a hard mask layer on the firstdielectric structure 106 and then patterned to form the hard mask with the image of the via opening O1. In some other embodiments, themask layer 108 may be a photoresist layer. Formation of themask layer 108 includes forming a photoresist layer on the firstdielectric structure 106 and then patterned to form a photoresist mask with the image of the opening of themask layer 108. - An Etching process is performed to the portion of the first
dielectric structure 106 exposed by themask layer 108 to form a via opening O1 therein. The etching process of forming the via opening O1 is stopped by theliner layer 104, so that the via opening O1 is present on theliner layer 104 in this step. In other words, theliner layer 104 is exposed by the via opening O1. In some embodiments, the etching process may be a dry etching, wet etching and/or plasma etching process. The etching process of forming the via opening O1 may employ a mixture of tetrafluoromethane (CF4), trifluoromethane (CHF3) and oxygen as the etching gases. - Reference is made to
FIG. 2 . Adummy structure 110 is at least formed in the via opening O1. More particularly, thedummy structure 110 is formed in the via opening O1 and on a top surface of themask layer 108. In some embodiments, thedummy structure 110 and thefirst dielectric structure 106 have different materials such that thedummy structure 110 may be selectively etched with respect to thefirst dielectric structure 106 in a subsequent process. More particularly, thedummy structure 110 and thefirst dielectric structure 106 have different etch properties. In some embodiments, thedummy structure 110 may include photoresist or bottom antireflective coating (BARC). More particularly, thedummy structure 110 may include a material having an etch selectivity different from an etch selectivity of thefirst dielectric structure 106. “Etch selectivity” in this context is a ratio of an amount of an etch-target material etched away versus an amount of photoresist etched away in a single etching process. For example, thefirst dielectric structure 106 may include tetrathoxysilane (TEOS), an extreme low-k (ELK) dielectric material, nitrogen-free anti-reflective coating (NFARC), or silicon oxide, and thedummy structure 110 may include the material different from the firstdielectric material 106, such as silicon nitride, so that thedummy structure 110 can be selectively etched with respect to thefirst dielectric structure 106 to leave the via opening O1 in a subsequent process. Thedummy structure 110 can be formed by a deposition process, such as, the CVD process. - Reference is made to
FIG. 3 . Themask layer 108 and a portion of thedummy structure 110 overlying themask layer 108 are removed to expose thetop surface 107 of thefirst dielectric structure 106. After this removal process, a portion of thedummy structure 110 still remains in the via opening O1. This removal process can be implanted by, for example, a chemical-mechanical polishing (CMP) process. The CMP process removes themask layer 108 and portions of thedummy structure 110 overlying themask layer 108 and outside the via opening O1. The CMP process may stop when reaching thefirst dielectric structure 106, so as to provide a substantially planartop surface 107. - Reference is made to
FIG. 4 . Anetch stop layer 112 is formed on thetop surface 107 of thefirst dielectric structure 106 and atop surface 111 of thedummy structure 110. Theetch stop layer 112 protects thefirst dielectric structure 106 against a subsequent etching process of forming a trench opening thereon. In some embodiments, theetch stop layer 112 and thefirst dielectric structure 106 have different etch properties, so that theetch stop layer 112 can be selectively etched with respect to thefirst dielectric structure 106 in a subsequent process. In some embodiments, theetch stop layer 112 may include a dielectric material, such as silicon oxynitride, silicon carbide, silicon carbon oxynitride, silicon nitride, or carbon-doped silicon nitride. In some embodiments, theetch stop layer 112 may be deposited using CVD, high density plasma (HDP) CVD, sub-atmospheric CVD (SACVD), molecular layer deposition (MLD), sputtering, physical vapor deposition (PVD), or other suitable techniques. For example, in some embodiments, the MLD process is carried out under a pressure less than about 10 mTorr and in the temperature range from about 350° C. to about 500° C. In some embodiments, the silicon nitride is deposited on thetop surface 107 of thefirst dielectric structure 106 and thetop surface 111 of thedummy structure 110 by reacting a silicon source compound and a nitrogen source. The silicon source compound provides silicon to the deposited silicon nitride and may include silane (SiH4) or tetrathoxysilane (TEOS). The nitrogen source provides nitrogen to the deposited silicon nitride and may include ammonia (NH3) or nitrogen gas (N2). In some other embodiments, the carbon-doped silicon nitride is deposited on thetop surface 107 of thefirst dielectric structure 106 and thetop surface 111 of thedummy structure 110 by reacting a carbon source compound, a silicon source compound, and a nitrogen source. The carbon source compound may include an organic compound, such as a hydrocarbon compound, e.g., ethylene (C2H6). - Reference is made to
FIG. 5 . Asecond dielectric structure 114 is formed on theetch stop layer 112. Thesecond dielectric structure 114 and theetch stop layer 112 have different etch properties. In a greater detail, thesecond dielectric structure 114 may include a material having an etch selectivity different from the etch selectivity of theetch stop layer 112, so that theetch stop layer 112 can protect theunderlying dummy structure 110 and thefirst dielectric structure 106 against the etching process performed to thesecond dielectric structure 114 in a subsequent process. For example, thesecond dielectric structure 114 may include tetrathoxysilane (TEOS), an extreme low-k (ELK) dielectric material, nitrogen-free anti-reflective coating (NFARC), silicon oxide, silicon nitride, silicon oxynitride, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), spin-on glass (SOG), fluorinated silica glass (FSG), carbon doped silicon oxide (e.g., SiCOH), Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, BCB (bis-benzocyclobutenes), polyimide, and/or combinations thereof. The ELK dielectric material has a dielectric constant less than, for example, about 2.5. It is understood that thesecond dielectric structure 114 may include one or more dielectric materials and/or one or more dielectric layers. In some embodiments, thesecond dielectric structure 114 may be deposited on theetch stop layer 112 by using, for example, CVD, HDP CVD, SACVD, spin-on, sputtering, or other suitable techniques. - Reference is made to
FIG. 6 . Amask layer 116 is formed over thesecond dielectric layer 114. Themask layer 116 may include photoresist or other photo-sensitive materials. For example, themask layer 116 may include the deep UV photoresist or other phtoresists. Themask layer 116 may be formed by, for example, coating photoresist on thesecond dielectric structure 114. - Reference is made to
FIG. 7 . Themask layer 116 is patterned to form a photoresist mask having an opening O2 exposing a portion of thesecond dielectric structure 114, so that an etching process can be performed to the exposed portion of thesecond dielectric structure 114 to form a trench opening in a later step. In some other embodiments, themask layer 116 may be a hard mask, such as silicon nitride (Si3N4), which has relatively high etching resistivity compared to thesecond dielectric structure 114. Formation of the hard mask includes forming a hard mask layer on thesecond dielectric structure 114 and then patterned to form the hard mask with the image of the opening O2. - Reference is made to
FIG. 8 . A portion of thesecond dielectric structure 114 not covered by themask layer 116 is removed to form a trench opening O3 in thesecond dielectric structure 114, and a portion of theetch stop layer 112 is exposed by the trench opening O3. The removal process can be an etching process, such as an anisotropic etching process. In other words, thesecond dielectric structure 114 is etched through to form the trench opening O3 that exposes theetch stop layer 112. The anisotropic etching process can be, for example, a CF4 based or C4F8 based dry etching process. Theetch stop layer 112 can protect the underlyingfirst dielectric structure 106 against this etching process of forming the trench opening O3 because theetch stop layer 112 and thesecond dielectric structure 114 have different etch properties, and therefore, theetch stop layer 112 can prevent the underlyingfirst dielectric structure 106 from over-etched, which may benefit the trench opening O3 formed in a suitable shape and depth. Themask layer 116 can protect the underlying portion of thesecond dielectric structure 114 against the etching process of forming the trench opening O3, so that the trench O3 can be formed with a pattern corresponding to the opening O2 of themask layer 116. In other words, themask layer 116 defines the pattern of the trench opening O3. - Reference is made to
FIG. 9 . A portion of theetch stop layer 112 exposed by the trench opening O3 is removed to expose portions of thetop surfaces first dielectric structure 106 and thedummy structure 110. For example, the portion of theetch stop layer 112 underlying the trench opening O3 can be removed by using a dry etching process, wet etching process, or combinations thereof. In some embodiments, the removal process is a wet etching process, and since thefirst dielectric structure 106 and theetch stop layer 112 have different etch properties, theetch stop layer 112 can be selectively etched with respect to thefirst dielectric structure 106, so that over-etching of thefirst dielectric structure 106 may be prevented from the etching process of removing theetch stop layer 112. - Reference is made to
FIG. 10 . Thedummy structure 110 is removed to expose the via opening O1. This removal process may include an etching process, such as a wet etching process. During the wet etching process, since thedummy structure 110 and thefirst dielectric structure 106 have different etch properties, thedummy structure 110 can be selectively etched with respect to thefirst dielectric structure 106. Therefore, the shape or size of the via opening O1 may not be modified by the etching process of removing thedummy structure 110. Moreover, since thedummy structure 110 and thefirst dielectric structure 106 have different etch properties, thetop surface 107 may not be recessed by the etching process of removing thedummy structure 110, so that the over-etching of thefirst dielectric structure 106 can be prevented. After this removal process, the via opening O1 is present between the trench opening O3 and theliner layer 104, and a width of the via opening O1 is less than a width of the trench opening O3. Stated differently, thefirst dielectric structure 106 may serve as a lower dielectric layer having the via opening O1 therein, and thesecond dielectric structure 114 may serve as an upper dielectric layer having the trench opening O3 therein. Theetch stop layer 112 is present between the lower dielectric layer and the upper dielectric layer. - Reference is made to
FIG. 11 . Aprotective layer 118 is at least formed on a portion of thetop surface 107 of thefirst dielectric structure 106 exposed by the trench opening O3. In particular, theprotective layer 118 is conformally formed on a top surface of themask layer 116, the exposedtop surface 107 of thefirst dielectric structure 106, a top surface of theliner layer 104, an inner circumferential surfaces of the via opening O1, the opening O2 and the trench opening O3. In some embodiments, theprotective layer 118 and thefirst dielectric structure 106 are made of different materials that have different etch properties and different adhesion abilities to a byproduct generated during a subsequent etching process performed to theliner layer 104. More particularly, theprotective layer 118 may include a material having an etch selectivity different from the etch selectivity of thefirst dielectric structure 106. Moreover, the materials of theprotective layer 118 and thefirst dielectric structure 106 are determined such that the adhesion ability of theprotective layer 118 to the byproduct of etching theliner layer 104 is weaker than the adhesion ability of thefirst dielectric structure 106 to the byproduct of etching theliner layer 104. For example, theprotective layer 118 may include a dielectric material, such as silicon nitride (SiN) or silicon oxynitride (SiON), and thefirst dielectric structure 106 may include tetrathoxysilane (TEOS), an extreme low-k (ELK) dielectric material, nitrogen-free anti-reflective coating (NFARC), or silicon oxide, which is different from theprotective layer 118. During a subsequent etching process of removing a portion of theliner layer 104 between the via opening O1 and thenon-insulator structure 102, the etch selectivity of theprotective layer 118 is lower than the etch selectivity of thefirst dielectric structure 106, so that theprotective layer 118 is not easier to be etched compared to thefirst dielectric structure 106, and therefore, theprotective layer 118 can prevent the underlyingfirst dielectric structure 106 from over-etched during the liner etching process. Moreover, since the adhesion ability of theprotective layer 118 to the byproduct of etching theliner layer 104 is weaker than the adhesion ability of thefirst dielectric structure 106 to the byproduct of etching theliner layer 104, a portion of theprotective layer 118 formed on asidewall 109 of the via opening O1 can prevent the byproduct of etching theliner layer 104 adhered to thesidewall 109, so that a size of the via opening O1 is not reduced by the byproduct adhered to thesidewall 109. “Adhesion ability to the byproduct” in this context refers to the amount of the byproduct that can be adhered to per unit area of a surface. For example, “the adhesion ability of theprotective layer 118 to the byproduct” refers to the amount of the byproduct that can be adhered to per unit area of a surface of theprotective layer 118. Similarly, “the adhesion ability of thefirst dielectric structure 106 to the byproduct” refers to the amount of the byproduct that can be adhered to per unit area of a surface of thefirst dielectric structure 106. - Formation of the
protective layer 118 may be performed by an atomic layer deposition (ALD) process or a CVD process. For example, theprotective layer 118 may be a silicon nitride layer formed by ALD. The ALD for forming the silicon nitride layer includes multiple silicon nitride deposition cycles. Each silicon nitride deposition cycle may include contacting the top surface of themask layer 116, the exposedtop surface 107 of thefirst dielectric structure 106, the top surface of theliner layer 104, inner circumferential surfaces of the via opening O1, the opening O2 and the trench opening O3 with a silicon precursor, such that the silicon precursor adsorbs on these surfaces, and contacting these surfaces with a nitrogen precursor. The silicon nitride deposition cycle may be repeated as many times as to achieve a desired thickness and composition of a silicon nitride layer. This resulting silicon nitride layer serves as theprotective layer 118. In some embodiments, the ALD process may benefit the control of the thickness of theprotective layer 118 and thus benefit the control the critical dimension (CD) of the via opening O1 and/or the trench opening O3. - Reference is made to
FIG. 12 . A portion of theliner layer 104 underlying the via opening O1 is removed to form an opening O4, which allows thenon-insulator structure 102 exposed by the via opening O1 and the opening O4. This removal process removes some portions of theprotective layer 118 as well, and some portions of theprotective layer 118 remain in the interconnection structure. In a greater detail, a remaining portion of theprotective layer 118 serves as a firstprotective layer 118 a that is present on at least onesidewall 115 of the trench opening O3, and another remaining portion of theprotective layer 118 serves as a secondprotective layer 118 b that is present on thesidewall 109 of the via opening O1. Since the first and secondprotective layers protective layer 118, the first and secondprotective layers protective layer 118 a on thesidewall 115 of the trench opening O3 may serve as a dielectric trench liner, and the secondprotective layer 118 b on thesidewall 109 of the via opening O1 may serve as a dielectric via liner. In some embodiments, a portion of theliner layer 104 remains between the secondprotective layer 118 b and thenon-insulator structure 102 since the portion of theliner layer 104 is protected by the overlying secondprotective layer 118 b during the liner etching process. In such a configuration, the secondprotective layer 118 b and thenon-insulator structure 102 are separated. More particularly, the secondprotective layer 118 b and thenon-insulator structure 102 are separated by theliner layer 104. In other words, a portion of theliner layer 104 is present between the secondprotective layer 118 b and thenon-insulator structure 102. Stated differently, the secondprotective layer 118 b is adjacent to theliner layer 104. In some embodiments, the firstprotective layer 118 a is present on thetop surface 107 of thefirst dielectric structure 106 and covers a side surface of theetch stop layer 112. - In some embodiments, the portion of the
liner layer 104 underlying the via opening O1 can be removed by using a dry etching process. The dry etching process may have a high selectivity such that the dry etching process may stop at thenon-insulator structure 102. For example, the dry etching process may be performed under a source power of about 150 to 220 W, and a pressure of about 10 to 45 mTorr, using CH2F2 and Ar as etching gases. Unwanted etching of thenon-insulator structure 102 may be reduced during the etching processes of forming the via and trench openings O1 and O3 due to the introduction of theliner layer 104 on thenon-insulator structure 102. In a greater detail, theliner layer 104 may benefit forming anon-insulator structure 102 without a recess caused by the etching processes of forming the via and trench openings O1 and O3, thereby enhancing the device performance. - Since the liner etching process is performed after forming the
protective layer 118, and theprotective layer 118 and thefirst dielectric structure 106 have different etch properties, theprotective layer 118 can protect the underlying portion of thefirst dielectric structure 106 from over-etched during the liner etching process. Further, since the liner etching process is performed after forming theprotective layer 118, and the adhesion ability of theprotective layer 118 to the byproduct of etching theliner layer 104 is weaker than the adhesion ability of thefirst dielectric structure 106 to the byproduct of etching theliner layer 104, theprotective layer 118 formed on thesidewall 109 of the via opening O1 can prevent the byproduct of etching theliner layer 104 adhered to thesidewall 109 of the via opening O1, so that the size of the via opening O1 is not reduced by the byproduct adhered to thesidewall 109. - Reference is made to
FIG. 13 . Aconductive structure 120 is at least formed in the via opening O1 and the trench opening O3 to electrically connect to thenon-insulator structure 102 through the opening O4 of theliner layer 104. The firstprotective layer 118 a is present between theconductive structure 120 and thesidewall 115 of the trench opening O3, and the secondprotective layer 118 b is present between theconductive structure 120 and thesidewall 109 of the via opening O1. Since theetch stop layer 112 prevents thefirst dielectric structure 106 from over-etched during formation of the trench opening O3, and theprotective layer 118 prevents thefirst dielectric structure 106 from over-etched during the etching process performed to theliner layer 104, the trench opening O3 may not be formed into thenon-insulator structure 102 due to over-etching, so that theconductive structure 120 filling the trench opening O3 may not be formed in thenon-insulator structure 102, which may prevent undesired electrical connections between theconductive structure 120 and thenon-insulator structure 102. Further, since the secondprotective layer 118 b prevents reduction of the size of the via opening O1 due to adhesion of the byproduct of etching theliner layer 104, a portion of theconductive structure 120 can be formed in the via opening O1 with a suitable size. - In some embodiments, the
conductive structure 120 includes TiN, TaN, Ta, Ti, Hf, Zr, Ni, W, Co, Cu, or Al. In some embodiments, theconductive structure 120 may be formed by CVD, PVD, plating, ALD, or other suitable techniques. In some embodiments, theconductive structure 120 may include a laminate. The laminate may further include a barrier metal layer, a linear metal layer or a wetting metal layer. Further, the thickness of theconductive structure 120 depends on the depth of the via and trench openings O1 and O3. Theconductive structure 120 is deposited until the via and trench openings O1 and O3 are substantially filled or over-filled. - In some embodiments, when the
conductive structure 120 over-fills the trench opening O3, theconductive structure 120 may include a lowerconductive portion 122, a middleconductive portion 124 and an upperconductive portion 126. The middleconductive portion 124 connects the lowerconductive portion 122 and the upperconductive portion 126. The lowerconductive portion 122 fills the via opening O1. In a greater detail, the lowerconductive portion 122 is present in the via opening O1 and opening O4 of theliner layer 104 and on the secondprotective layer 118 b. The lowerconductive portion 122 may be formed with a suitable size due to the relative weak adhesion ability of the secondprotective layer 118 b compared to thefirst dielectric structure 106. The middleconductive portion 124 is present in the trench opening O2 and on the firstprotective layer 118 a. The middleconductive portion 124 may not be formed in thenon-insulator structure 102 due to over-etching of the trench opening O3 because theetch stop layer 112 and theprotective layer 118 protect thefirst dielectric structure 106 against over-etching. - In some embodiments, the middle
conductive portion 124 of theconductive structure 120 and theetch stop layer 112 are arranged on thetop surface 107 of thefirst dielectric structure 106 in a non-overlapping manner. In detail, theconductive structure 120 and theetch stop layer 112 are separated. In a greater detail, the firstprotective layer 118 a present on thetop surface 107 separates theetch stop layer 112 and the middleconductive portion 124 of theconductive structure 120. The overfilling portion of theconductive structure 120 forms the upperconductive portion 126 overlying themask layer 116. - Reference is made to
FIG. 14 . A CMP process is performed to planarize theconductive structure 120 after filling the via and trench openings O1 and O3. The CMP process removes the upperconductive portion 126 of theconductive structure 120 outside the via and trench openings O1 and O3, and the CMP process may stop when reaching thesecond dielectric structure 114 and thus provide a substantially planar surface. The CMP process removes themask layer 116. - In some embodiments, since the etch stop layer protects the first dielectric structure against the etching process of forming the trench opening O3, and the protective layer protects the first dielectric structure against the etching process of removing a portion of the liner layer, the first dielectric structure may not be over-etched. Moreover, since the protective layer prevents the byproduct of etching the liner layer from adhered to the sidewall of the via opening, the size of the via opening may not be reduced by the byproduct of etching the liner layer.
- In some embodiments, a method includes depositing a first dielectric structure over a non-insulator structure, removing a portion of the first dielectric structure to form a via opening, filling the via opening with a dummy structure, depositing a second dielectric structure over the dummy structure, etching a portion of the second dielectric structure to form a trench over the dummy structure, removing the dummy structure from the via opening, and filling the trench opening and the via opening with a conductive structure, wherein the conductive structure is electrically connected to the non-insulator structure.
- In some embodiments, the method further includes depositing an etch stop layer over the dummy structure, wherein the second dielectric structure is over the etch stop layer, removing a portion of the etch stop layer under the trench to expose a portion of the first dielectric structure, and depositing a protective layer over the exposed portion of the first dielectric structure.
- In some embodiments, the method further includes depositing a liner layer on the non-insulator structure, and removing a portion of the liner layer between the via opening and the non-insulator structure.
- In some embodiments, a portion of the protective layer remains on a sidewall of the via opening after removing the portion of the liner layer.
- In some embodiments, a portion of the protective layer remains on a sidewall of the trench after removing the portion of the liner layer.
- In some embodiments, a first portion and a second portion of the protective layer remain on sidewalls of the trench and the via opening after removing the portion of the liner layer, and the first and second portions of the protective layer are separated.
- In some embodiments, the protective layer and the first dielectric structure have different etch selectivities.
- In some embodiments, the etch stop layer and the first dielectric structure have different etch selectivities.
- In some embodiments, depositing the protective layer is performed after removing the dummy structure.
- In some embodiments, filling the via opening includes overfilling the via opening with the dummy structure, and removing a portion of the dummy structure over the first dielectric structure.
- In some embodiments, a method includes depositing an etch stop layer over a first dielectric structure and a dummy structure in the first dielectric structure, depositing a second dielectric structure over the etch stop layer, etching the second dielectric structure to form a trench that exposes a portion of the etch stop layer, removing the exposed portion of the etch stop layer, removing the dummy structure to form a via opening in the first dielectric structure, and depositing a conductor in the trench and the via opening.
- In some embodiments, removing the exposed portion of the etch stop layer comprises selectively etching the exposed portion of the etch stop layer with respect to the first dielectric structure.
- In some embodiments, removing the dummy structure comprises selectively etching the dummy structure with respect to the first dielectric structure.
- In some embodiments, etching the second dielectric structure is performed such that a width of the trench is greater than a width of the dummy structure.
- In some embodiments, removing the exposed portion of the etch stop layer is performed until the dummy structure and the first dielectric structure are exposed.
- In some embodiments, the method further includes performing a chemical-mechanical polishing process to remove a portion of the dummy structure over the first dielectric structure prior to forming the etch stop layer.
- In some embodiments, a method includes depositing a first dielectric structure over a liner layer on a non-insulator structure, depositing a second dielectric structure over the first dielectric structure, etching the second dielectric structure to form a trench, etching the first dielectric structure to form a via opening under the trench, depositing a protective layer in the via opening and the trench, and etching the liner layer to expose the non-insulator structure, wherein a byproduct is generated by the etch operation, and the protective layer has weaker adhesion to the byproduct than that of the first dielectric structure.
- In some embodiments, depositing the protective layer includes atomic layer deposition process.
- In some embodiments, etching the liner layer includes removing a first portion of the protective layer in parallel with the etched liner layer, and remaining a second portion of the protective layer along a sidewall of the via opening and a sidewall of the trench.
- In some embodiments, removing the first portion of the protective layer includes removing an upper part of the second portion of the protective layer to have a tapered profile.
- The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Claims (20)
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---|---|---|---|---|
US9859156B2 (en) * | 2015-12-30 | 2018-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnection structure with sidewall dielectric protection layer |
US20190140167A1 (en) * | 2017-11-07 | 2019-05-09 | Everspin Technologies, Inc. | Angled surface removal process and structure relating thereto |
US10361120B2 (en) * | 2017-11-30 | 2019-07-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Conductive feature formation and structure |
US10867905B2 (en) | 2017-11-30 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structures and methods of forming the same |
US11011413B2 (en) | 2017-11-30 | 2021-05-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structures and methods of forming the same |
DE102018102448B4 (en) | 2017-11-30 | 2023-06-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Formation and structure of conductive features |
WO2019113482A1 (en) * | 2017-12-08 | 2019-06-13 | Tokyo Electron Limited | High aspect ratio via etch using atomic layer deposition protection layer |
US10658233B2 (en) | 2018-10-17 | 2020-05-19 | International Business Machines Corporation | Dielectric damage-free dual damascene Cu interconnects without barrier at via bottom |
US11177170B2 (en) * | 2020-01-16 | 2021-11-16 | International Business Machines Corporation | Removal of barrier and liner layers from a bottom of a via |
US20220102138A1 (en) * | 2020-09-30 | 2022-03-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect Structure for Semiconductor Devices |
US20220336269A1 (en) * | 2021-04-15 | 2022-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Homogeneous source/drain contact structure |
CN114758987A (en) * | 2022-06-15 | 2022-07-15 | 浙江创芯集成电路有限公司 | Method for forming interconnection structure |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7341938B2 (en) * | 2003-10-21 | 2008-03-11 | Ziptronix, Inc. | Single mask via method and device |
Family Cites Families (130)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US455043A (en) * | 1891-06-30 | Ninger | ||
US6300794B1 (en) * | 1996-10-10 | 2001-10-09 | Altera Corporation | Programmable logic device with hierarchical interconnection resources |
US5985762A (en) * | 1997-05-19 | 1999-11-16 | International Business Machines Corporation | Method of forming a self-aligned copper diffusion barrier in vias |
US5904565A (en) * | 1997-07-17 | 1999-05-18 | Sharp Microelectronics Technology, Inc. | Low resistance contact between integrated circuit metal levels and method for same |
US5920790A (en) * | 1997-08-29 | 1999-07-06 | Motorola, Inc. | Method of forming a semiconductor device having dual inlaid structure |
US6057239A (en) * | 1997-12-17 | 2000-05-02 | Advanced Micro Devices, Inc. | Dual damascene process using sacrificial spin-on materials |
IL138615A0 (en) * | 1998-03-27 | 2001-10-31 | Cytos Biotechnology Ag | Alphaviral gene expression system and dna molecules for use therein |
US6042999A (en) * | 1998-05-07 | 2000-03-28 | Taiwan Semiconductor Manufacturing Company | Robust dual damascene process |
JP2000150516A (en) * | 1998-09-02 | 2000-05-30 | Tokyo Electron Ltd | Fabrication of semiconductor device |
TW389991B (en) * | 1998-09-04 | 2000-05-11 | United Microelectronics Corp | Method for producing copper interconnect |
US6406995B1 (en) * | 1998-09-30 | 2002-06-18 | Intel Corporation | Pattern-sensitive deposition for damascene processing |
US6319815B1 (en) * | 1998-10-21 | 2001-11-20 | Tokyo Ohka Kogyo Co., Ltd. | Electric wiring forming method with use of embedding material |
JP2000150644A (en) * | 1998-11-10 | 2000-05-30 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JP2000174123A (en) * | 1998-12-09 | 2000-06-23 | Nec Corp | Semiconductor device and manufacture thereof |
TW413896B (en) * | 1999-01-06 | 2000-12-01 | United Microelectronics Corp | Manufacturing method for dual damascene structure |
KR20000071346A (en) * | 1999-02-15 | 2000-11-25 | 가네꼬 히사시 | Manufacturing method of semiconductor device using a dual damascene process |
US6211069B1 (en) * | 1999-05-17 | 2001-04-03 | Taiwan Semiconductor Manufacturing Company | Dual damascene process flow for a deep sub-micron technology |
US6329118B1 (en) * | 1999-06-21 | 2001-12-11 | Intel Corporation | Method for patterning dual damascene interconnects using a sacrificial light absorbing material |
US6177347B1 (en) * | 1999-07-02 | 2001-01-23 | Taiwan Semiconductor Manufacturing Company | In-situ cleaning process for Cu metallization |
FR2798512B1 (en) * | 1999-09-14 | 2001-10-19 | Commissariat Energie Atomique | PROCESS FOR MAKING A COPPER CONNECTION THROUGH A DIELECTRIC MATERIAL LAYER OF AN INTEGRATED CIRCUIT |
US6040243A (en) * | 1999-09-20 | 2000-03-21 | Chartered Semiconductor Manufacturing Ltd. | Method to form copper damascene interconnects using a reverse barrier metal scheme to eliminate copper diffusion |
KR100346830B1 (en) * | 1999-09-29 | 2002-08-03 | 삼성전자 주식회사 | Method of manufacturing electrical interconnection for semiconductor device |
US6284657B1 (en) * | 2000-02-25 | 2001-09-04 | Chartered Semiconductor Manufacturing Ltd. | Non-metallic barrier formation for copper damascene type interconnects |
JP2001332621A (en) * | 2000-03-13 | 2001-11-30 | Toshiba Corp | Semiconductor device and method of manufacturing the same |
US6812131B1 (en) * | 2000-04-11 | 2004-11-02 | Honeywell International Inc. | Use of sacrificial inorganic dielectrics for dual damascene processes utilizing organic intermetal dielectrics |
US6319821B1 (en) * | 2000-04-24 | 2001-11-20 | Taiwan Semiconductor Manufacturing Company | Dual damascene approach for small geometry dimension |
US6323121B1 (en) * | 2000-05-12 | 2001-11-27 | Taiwan Semiconductor Manufacturing Company | Fully dry post-via-etch cleaning method for a damascene process |
US6372636B1 (en) * | 2000-06-05 | 2002-04-16 | Chartered Semiconductor Manufacturing Ltd. | Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene |
JP2001358216A (en) * | 2000-06-16 | 2001-12-26 | Mitsubishi Electric Corp | Method for manufacturing semiconductor device, burying material used for method for manufacturing semiconductor device and semiconductor device |
KR100403454B1 (en) * | 2000-06-20 | 2003-11-01 | 주식회사 하이닉스반도체 | Method of forming a metal wiring in a semiconductor device |
TW463307B (en) * | 2000-06-29 | 2001-11-11 | Mosel Vitelic Inc | Manufacturing method of dual damascene structure |
US6365508B1 (en) * | 2000-07-18 | 2002-04-02 | Chartered Semiconductor Manufacturing Ltd. | Process without post-etch cleaning-converting polymer and by-products into an inert layer |
JP4858895B2 (en) * | 2000-07-21 | 2012-01-18 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
JP3574383B2 (en) * | 2000-07-31 | 2004-10-06 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
US6358842B1 (en) * | 2000-08-07 | 2002-03-19 | Chartered Semiconductor Manufacturing Ltd. | Method to form damascene interconnects with sidewall passivation to protect organic dielectrics |
US6683002B1 (en) * | 2000-08-10 | 2004-01-27 | Chartered Semiconductor Manufacturing Ltd. | Method to create a copper diffusion deterrent interface |
DE60127973T2 (en) * | 2000-08-18 | 2008-01-17 | Tokyo Electron Ltd. | PRODUCTION PROCESS OF SEMICONDUCTOR COMPONENT WITH SILICON NITRIDE INTERMEDIATE WITH LOW DIELECTRIC CONSTANT |
US6472306B1 (en) * | 2000-09-05 | 2002-10-29 | Industrial Technology Research Institute | Method of forming a dual damascene opening using CVD Low-K material and spin-on-polymer |
WO2002023616A1 (en) * | 2000-09-18 | 2002-03-21 | Acm Research, Inc. | Integrating metal with ultra low-k dielectrics |
US6583047B2 (en) * | 2000-12-26 | 2003-06-24 | Honeywell International, Inc. | Method for eliminating reaction between photoresist and OSG |
TW483104B (en) * | 2001-01-10 | 2002-04-11 | Macronix Int Co Ltd | Dual damascene manufacturing method using photoresist top surface image method to improve trench first |
US6576982B1 (en) * | 2001-02-06 | 2003-06-10 | Advanced Micro Devices, Inc. | Use of sion for preventing copper contamination of dielectric layer |
US6756672B1 (en) * | 2001-02-06 | 2004-06-29 | Advanced Micro Devices, Inc. | Use of sic for preventing copper contamination of low-k dielectric layers |
US6521524B1 (en) * | 2001-02-07 | 2003-02-18 | Advanced Micro Devices, Inc. | Via filled dual damascene structure with middle stop layer and method for making the same |
US6372631B1 (en) * | 2001-02-07 | 2002-04-16 | Advanced Micro Devices, Inc. | Method of making a via filled dual damascene structure without middle stop layer |
US6624066B2 (en) * | 2001-02-14 | 2003-09-23 | Texas Instruments Incorporated | Reliable interconnects with low via/contact resistance |
US6689684B1 (en) * | 2001-02-15 | 2004-02-10 | Advanced Micro Devices, Inc. | Cu damascene interconnections using barrier/capping layer |
US20020139771A1 (en) * | 2001-02-22 | 2002-10-03 | Ping Jiang | Gas switching during an etch process to modulate the characteristics of the etch |
US6566242B1 (en) * | 2001-03-23 | 2003-05-20 | International Business Machines Corporation | Dual damascene copper interconnect to a damascene tungsten wiring level |
US7132363B2 (en) * | 2001-03-27 | 2006-11-07 | Advanced Micro Devices, Inc. | Stabilizing fluorine etching of low-k materials |
US6518166B1 (en) * | 2001-04-23 | 2003-02-11 | Taiwan Semiconductor Manufacturing Company | Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layer |
JP2002329781A (en) * | 2001-04-27 | 2002-11-15 | Tokyo Ohka Kogyo Co Ltd | Method for filling fine hole |
KR100416596B1 (en) * | 2001-05-10 | 2004-02-05 | 삼성전자주식회사 | Method of manufacturing interconnection wire in semiconductor device |
US6861347B2 (en) * | 2001-05-17 | 2005-03-01 | Samsung Electronics Co., Ltd. | Method for forming metal wiring layer of semiconductor device |
US6878615B2 (en) * | 2001-05-24 | 2005-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to solve via poisoning for porous low-k dielectric |
US6448185B1 (en) * | 2001-06-01 | 2002-09-10 | Intel Corporation | Method for making a semiconductor device that has a dual damascene interconnect |
US6605545B2 (en) * | 2001-06-01 | 2003-08-12 | United Microelectronics Corp. | Method for forming hybrid low-K film stack to avoid thermal stress effect |
US6458705B1 (en) * | 2001-06-06 | 2002-10-01 | United Microelectronics Corp. | Method for forming via-first dual damascene interconnect structure |
US6794293B2 (en) * | 2001-10-05 | 2004-09-21 | Lam Research Corporation | Trench etch process for low-k dielectrics |
US6734097B2 (en) * | 2001-09-28 | 2004-05-11 | Infineon Technologies Ag | Liner with poor step coverage to improve contact resistance in W contacts |
JP2003124309A (en) * | 2001-10-09 | 2003-04-25 | Macronix Internatl Co Ltd | Method of forming via and trench in copper dual damascene process |
JP3810309B2 (en) * | 2001-12-03 | 2006-08-16 | Necエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
US6664181B2 (en) * | 2001-12-07 | 2003-12-16 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor device |
US6905968B2 (en) * | 2001-12-12 | 2005-06-14 | Applied Materials, Inc. | Process for selectively etching dielectric layers |
US6737747B2 (en) | 2002-01-15 | 2004-05-18 | International Business Machines Corporation | Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof |
US20030139034A1 (en) * | 2002-01-22 | 2003-07-24 | Yu-Shen Yuang | Dual damascene structure and method of making same |
US6488509B1 (en) * | 2002-01-23 | 2002-12-03 | Taiwan Semiconductor Manufacturing Company | Plug filling for dual-damascene process |
KR100442089B1 (en) * | 2002-01-29 | 2004-07-27 | 삼성전자주식회사 | Method of forming mos transistor having notched gate |
US6855629B2 (en) * | 2002-07-24 | 2005-02-15 | Samsung Electronics Co., Ltd. | Method for forming a dual damascene wiring pattern in a semiconductor device |
US7183195B2 (en) * | 2002-02-22 | 2007-02-27 | Samsung Electronics, Co., Ltd. | Method of fabricating dual damascene interconnections of microelectronic device using hybrid low k-dielectric and carbon-free inorganic filler |
JP2003282698A (en) * | 2002-03-22 | 2003-10-03 | Sony Corp | Method for fabricating semiconductor and the same |
US7022619B2 (en) * | 2002-03-27 | 2006-04-04 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating electronic device |
JP2003309172A (en) * | 2002-04-17 | 2003-10-31 | Nec Electronics Corp | Method of forming pattern in dual damascene process |
US6783995B2 (en) * | 2002-04-30 | 2004-08-31 | Micron Technology, Inc. | Protective layers for MRAM devices |
US6686293B2 (en) * | 2002-05-10 | 2004-02-03 | Applied Materials, Inc | Method of etching a trench in a silicon-containing dielectric material |
US6743713B2 (en) * | 2002-05-15 | 2004-06-01 | Institute Of Microelectronics | Method of forming dual damascene pattern using dual bottom anti-reflective coatings (BARC) |
US6852619B2 (en) * | 2002-05-31 | 2005-02-08 | Sharp Kabushiki Kaisha | Dual damascene semiconductor devices |
US7253112B2 (en) * | 2002-06-04 | 2007-08-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual damascene process |
KR100475931B1 (en) * | 2002-07-02 | 2005-03-10 | 매그나칩 반도체 유한회사 | Method for manufacturing a multi metal line in semiconductor device |
JP2004079901A (en) * | 2002-08-21 | 2004-03-11 | Nec Electronics Corp | Semiconductor device and method for manufacturing the same |
KR100462884B1 (en) * | 2002-08-21 | 2004-12-17 | 삼성전자주식회사 | Dual Damascene Interconnection Formation Method in Semiconductor Device using Sacrificial Filling Material |
US7005375B2 (en) * | 2002-09-30 | 2006-02-28 | Agere Systems Inc. | Method to avoid copper contamination of a via or dual damascene structure |
US6569777B1 (en) * | 2002-10-02 | 2003-05-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Plasma etching method to form dual damascene with improved via profile |
US6660630B1 (en) * | 2002-10-10 | 2003-12-09 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method for forming a tapered dual damascene via portion with improved performance |
US7109119B2 (en) * | 2002-10-31 | 2006-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Scum solution for chemically amplified resist patterning in cu/low k dual damascene |
US6884728B2 (en) * | 2002-11-06 | 2005-04-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for removing polymeric residue contamination on semiconductor feature sidewalls |
US6720256B1 (en) * | 2002-12-04 | 2004-04-13 | Taiwan Semiconductor Manufacturing Company | Method of dual damascene patterning |
KR20040063299A (en) * | 2003-01-06 | 2004-07-14 | 삼성전자주식회사 | Method of forming a via contact structure using a dual damascene process |
JP2004221439A (en) * | 2003-01-17 | 2004-08-05 | Matsushita Electric Ind Co Ltd | Manufacturing method of electronic device |
US7402514B2 (en) * | 2003-01-24 | 2008-07-22 | Texas Instruments Incorporated | Line-to-line reliability enhancement using a dielectric liner for a low dielectric constant interlevel and intralevel (or intermetal and intrametal) dielectric layer |
US20040158934A1 (en) * | 2003-02-14 | 2004-08-19 | Sears Jeffrey L. | Apparatus for washing machine including a drain-back groove |
JP4050631B2 (en) * | 2003-02-21 | 2008-02-20 | 株式会社ルネサステクノロジ | Manufacturing method of electronic device |
KR20040077307A (en) * | 2003-02-28 | 2004-09-04 | 삼성전자주식회사 | Method for forming of damascene metal wire |
US7026714B2 (en) * | 2003-03-18 | 2006-04-11 | Cunningham James A | Copper interconnect systems which use conductive, metal-based cap layers |
US6913994B2 (en) * | 2003-04-09 | 2005-07-05 | Agency For Science, Technology And Research | Method to form Cu/OSG dual damascene structure for high performance and reliable interconnects |
KR100546099B1 (en) * | 2003-05-30 | 2006-01-24 | 주식회사 하이닉스반도체 | Metal wiring formation method of semiconductor device |
US20040251548A1 (en) * | 2003-06-16 | 2004-12-16 | United Microelectronics Corp. | Method for forming barrier layer and structure |
US6849549B1 (en) * | 2003-12-04 | 2005-02-01 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for forming dummy structures for improved CMP and reduced capacitance |
US7344992B2 (en) * | 2003-12-31 | 2008-03-18 | Dongbu Electronics Co., Ltd. | Method for forming via hole and trench for dual damascene interconnection |
KR100571417B1 (en) * | 2003-12-31 | 2006-04-14 | 동부아남반도체 주식회사 | Dual damascene wiring of semiconductor device and manufacturing method thereof |
KR100621541B1 (en) * | 2004-02-06 | 2006-09-14 | 삼성전자주식회사 | Method for fabricating dual damascene interconnection and etchant for stripping sacrificial fill material |
US7071100B2 (en) * | 2004-02-27 | 2006-07-04 | Kei-Wei Chen | Method of forming barrier layer with reduced resistivity and improved reliability in copper damascene process |
US7241682B2 (en) * | 2004-02-27 | 2007-07-10 | Taiwan Seminconductor Manufacturing Co., Ltd. | Method of forming a dual damascene structure |
US7015133B2 (en) * | 2004-04-14 | 2006-03-21 | Taiwan Semiconductor Manufacturing Company | Dual damascene structure formed of low-k dielectric materials |
US7338903B2 (en) * | 2004-04-24 | 2008-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Sequential reducing plasma and inert plasma pre-treatment method for oxidizable conductor layer |
KR100593446B1 (en) * | 2004-05-19 | 2006-06-28 | 삼성전자주식회사 | Methods of manufacturing semiconductor devices using organic fluoride buffer solutions |
US7169701B2 (en) * | 2004-06-30 | 2007-01-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual damascene trench formation to avoid low-K dielectric damage |
US7192863B2 (en) * | 2004-07-30 | 2007-03-20 | Texas Instruments Incorporated | Method of eliminating etch ridges in a dual damascene process |
US7560375B2 (en) * | 2004-09-30 | 2009-07-14 | International Business Machines Corporation | Gas dielectric structure forming methods |
JP4492949B2 (en) * | 2004-11-01 | 2010-06-30 | ルネサスエレクトロニクス株式会社 | Manufacturing method of electronic device |
JP2006128542A (en) * | 2004-11-01 | 2006-05-18 | Nec Electronics Corp | Method for manufacturing electronic device |
JP2006128543A (en) * | 2004-11-01 | 2006-05-18 | Nec Electronics Corp | Method for manufacturing electronic device |
KR100690881B1 (en) * | 2005-02-05 | 2007-03-09 | 삼성전자주식회사 | Fabrication method of dual damascene interconnections of microelectronics and microelectronics having dual damascene interconnections fabricated thereby |
US7545045B2 (en) * | 2005-03-24 | 2009-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dummy via for reducing proximity effect and method of using the same |
US7192878B2 (en) * | 2005-05-09 | 2007-03-20 | United Microelectronics Corp. | Method for removing post-etch residue from wafer surface |
JP4197694B2 (en) * | 2005-08-10 | 2008-12-17 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
US20070082477A1 (en) * | 2005-10-06 | 2007-04-12 | Applied Materials, Inc. | Integrated circuit fabricating techniques employing sacrificial liners |
US20070105362A1 (en) * | 2005-11-09 | 2007-05-10 | Kim Jae H | Methods of forming contact structures in low-k materials using dual damascene processes |
JP4533304B2 (en) * | 2005-11-29 | 2010-09-01 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
US7828987B2 (en) * | 2006-03-20 | 2010-11-09 | Applied Materials, Inc. | Organic BARC etch process capable of use in the formation of low K dual damascene integrated circuits |
CN101330039B (en) * | 2007-06-18 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Method for eliminating load effect using through-hole plug |
US8501637B2 (en) * | 2007-12-21 | 2013-08-06 | Asm International N.V. | Silicon dioxide thin films by ALD |
US8653664B2 (en) * | 2009-07-08 | 2014-02-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Barrier layers for copper interconnect |
DE102010002451B4 (en) * | 2010-02-26 | 2012-01-26 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Method for producing contact elements of semiconductor devices |
US9666520B2 (en) * | 2014-04-30 | 2017-05-30 | Taiwan Semiconductor Manufactuing Company, Ltd. | 3D stacked-chip package |
US9711379B2 (en) * | 2014-04-30 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D stacked-chip package |
US9449837B2 (en) * | 2014-05-09 | 2016-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D chip-on-wafer-on-substrate structure with via last process |
US10332790B2 (en) * | 2015-06-15 | 2019-06-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor (FinFET) device structure with interconnect structure |
US9859156B2 (en) * | 2015-12-30 | 2018-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnection structure with sidewall dielectric protection layer |
US9659813B1 (en) * | 2016-02-05 | 2017-05-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnection and manufacturing method thereof |
-
2015
- 2015-12-30 US US14/985,157 patent/US9859156B2/en active Active
-
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- 2016-10-21 CN CN201610916225.0A patent/CN106935567B/en active Active
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-
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- 2017-12-21 US US15/851,661 patent/US11075112B2/en active Active
-
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- 2021-07-22 US US17/383,299 patent/US20210351065A1/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7341938B2 (en) * | 2003-10-21 | 2008-03-11 | Ziptronix, Inc. | Single mask via method and device |
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