US20200051981A1 - Semiconductor devices - Google Patents
Semiconductor devices Download PDFInfo
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- US20200051981A1 US20200051981A1 US16/257,913 US201916257913A US2020051981A1 US 20200051981 A1 US20200051981 A1 US 20200051981A1 US 201916257913 A US201916257913 A US 201916257913A US 2020051981 A1 US2020051981 A1 US 2020051981A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 206
- 239000002135 nanosheet Substances 0.000 claims abstract description 240
- 230000000903 blocking effect Effects 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 125000006850 spacer group Chemical group 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 53
- 239000010410 layer Substances 0.000 description 204
- 238000000034 method Methods 0.000 description 37
- 229910052751 metal Inorganic materials 0.000 description 36
- 239000002184 metal Substances 0.000 description 36
- 230000001681 protective effect Effects 0.000 description 22
- 229910021332 silicide Inorganic materials 0.000 description 18
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 18
- 238000002955 isolation Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910010041 TiAlC Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/7855—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with at least two independent gates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
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- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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- H01L29/0642—Isolation within the component, i.e. internal isolation
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Definitions
- the present disclosure relates to a semiconductor device, and more particularly, to a semiconductor device having a multi-gate metal-oxide-semiconductor field-effect transistor (MOSFET).
- MOSFET multi-gate metal-oxide-semiconductor field-effect transistor
- the inventive concept provides a semiconductor device with a multi-gate metal-oxide-semiconductor field-effect transistor (MOSFET) that may improve the performance of the semiconductor device.
- MOSFET metal-oxide-semiconductor field-effect transistor
- the disclosure is directed to a semiconductor device comprising: a fin-type active area extending lengthwise in a first direction and protruding from a substrate; a plurality of nanosheet stacked structures extending in parallel with an upper surface of the fin-type active area at a position spaced above the upper surface of the fin-type active area, each of the plurality of nanosheet stacked structures having a plurality of nanosheets having a channel region; a blocking film covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures; a gate electrode extending lengthwise in a second direction intersecting the first direction on the fin-type active area, the gate electrode including a real gate electrode surrounding the plurality of nanosheets and a dummy gate electrode disposed on the blocking film; and a gate dielectric layer between the real gate electrode and the plurality of nanosheets and between the dummy gate electrode and the blocking film.
- the disclosure is directed to a semiconductor device comprising: a substrate including a first region and a second region; a fin-type active area extending lengthwise in a first direction and protruding from the substrate in each of the first region and the second region; a plurality of nanosheet stacked structures extending in parallel with an upper surface of the fin-type active area at a position spaced above the upper surface of the fin-type active area, each of the plurality of nanosheet stacked structures having a plurality of nanosheets having a channel region; a blocking film covering a part of an upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures, in the first region; a plurality of gate electrodes overlapping with at least a portion of each of the plurality of nanosheet stacked structures on the fin-type active area and extending lengthwise in a second direction intersecting the first direction; and a plurality of residual semiconductor patterns in a space between
- the disclosure is directed to a semiconductor device comprising: a substrate including a first region and a second region; a fin-type active area extending lengthwise in a first direction and protruding from the substrate in each of the first region and the second region; a plurality of nanosheet stacked structures extending lengthwise in parallel with an upper surface of the fin-type active area at a position spaced above the upper surface of the fin-type active area, each of the plurality of nanosheet stacked structures having a plurality of nanosheets having a channel region; a first source/drain region and a second source/drain region which are disposed in the first region and the second region between the plurality of nanosheet stacked structures to be connected to the plurality of nanosheets and are made of different materials from each other; a first blocking film covering a part of an upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures, in the first region; a
- FIGS. 1 to 16 are cross-sectional views illustrating a method of manufacturing a semiconductor device, according to exemplary embodiments of the present disclosure, and a semiconductor device manufactured by the method, according to a process order;
- FIGS. 17 to 23 are cross-sectional views illustrating a method of manufacturing a semiconductor device, according to exemplary embodiments of the present disclosure, and a semiconductor device manufactured by the method, according to a process order;
- FIGS. 24 to 27 are cross-sectional views illustrating a method of manufacturing a semiconductor device, according to exemplary embodiments of the present disclosure, and a semiconductor device manufactured by the method, according to a process order;
- FIG. 28 is a cross-sectional view illustrating a semiconductor device manufactured by a method of manufacturing a semiconductor device, according to exemplary embodiments of the present disclosure. Specifically, FIG. 28 is a cross-sectional view taken along the X-Z plane.
- FIGS. 1 to 16 are cross-sectional views illustrating a method of manufacturing a semiconductor device, according to exemplary embodiments of the present disclosure, and a semiconductor device manufactured by the method, according to a process order.
- FIGS. 1, 2A, 3A, 4A, 5A, and 6 to 16 are cross-sectional views taken along the X-Z plane
- FIGS. 2B, 3B, 4B, and 5B are cross-sectional views taken along the Y-Z plane in each of FIGS. 2A, 3A, 4A, and 5A , and since the same shape is shown in a first region R 1 and a second region R 2 , the first region R 1 is not distinguished from the second region R 2 .
- a plurality of sacrificial semiconductor layers 106 S and a plurality of nanosheet semiconductor layers NS are alternately stacked on a substrate 102 having the first region R 1 and the second region R 2 .
- a PMOS transistor is formed in the first region R 1 of the substrate 102
- an NMOS transistor is formed in the second region R 2 to thereby form a CMOS device, but the present disclosure is not limited to this example.
- the substrate 102 may include a semiconductor such as Si or Ge or a compound semiconductor such as SiGe, SiC, GaAs, InAs, or InP.
- the substrate 102 may include at least one of a Group III-V material and a Group IV material.
- the Group III-V material may be a binary, ternary, or quaternary compound including at least one Group III element and at least one Group V element.
- the Group III-V material may be a compound containing at least one element of In, Ga and Al as a Group III element and at least one element of As, P and Sb as a Group V element.
- the Group III-V material may be selected from InP, InzGal-zAs (0 ⁇ Z ⁇ 1), and AlzGal-zAs (0 ⁇ Z ⁇ 1).
- the binary compound may be, for example, any one of InP, GaAs, InAs, InSb, and GaSb.
- the ternary compound may be any one of InGaP, InGaAs, AlInAs, InGaSb, GaAsSb, and GaAsP.
- the Group IV material may be Si or Ge.
- the Group III-V material and the Group IV material that may be used in the integrated circuit device according to the technical idea of the present disclosure are not limited to the above examples.
- the Group III-V material and the Group IV material such as Ge may be used as a channel material capable of forming a low-power, high-speed transistor.
- a high-performance CMOS may be formed by using a semiconductor substrate made of a Group III-V material, such as GaAs, having a higher electron mobility than the Si substrate, and a semiconductor substrate, such as Ge, having a higher degree of hole mobility than the Si substrate.
- the substrate 102 when forming an NMOS transistor on the substrate 102 , the substrate 102 may be made of any of the above-described Group III-V materials.
- at least a portion of the substrate 102 may be made of Ge.
- the substrate 102 may have a semiconductor on insulator (SOI) structure, such as silicon on insulator.
- SOI semiconductor on insulator
- the substrate 102 may include a conductive region, for example, a well doped with an impurity, or a structure doped with an impurity.
- the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS may be made of different semiconductor materials.
- the plurality of nanosheet semiconductor layers NS may be made of a single material.
- the plurality of nanosheet semiconductor layers NS may be made of the same material as the material of the substrate 102 .
- the plurality of sacrificial semiconductor layers 106 S may be made of SiGe, and the plurality of nanosheet semiconductor layers NS may be made of Si, but the present disclosure is not limited to these examples.
- the plurality of sacrificial semiconductor layers 106 S may be formed to have the same thickness, but the technical idea of the present disclosure is not limited to this example. In some embodiments, the thickness of the sacrificial semiconductor layer 106 S closest to the substrate 102 among the plurality of sacrificial semiconductor layers 106 S may be greater than the thickness of the remaining sacrificial semiconductor layer 106 S.
- a mask pattern MP is formed on the stacked structure of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS in each of the first region R 1 and the second region R 2 .
- the mask pattern MP may be formed of a plurality of line patterns extending in parallel in one direction (X direction).
- the mask pattern MP may include a pad oxide film pattern 512 and a hard mask pattern 514 .
- the hard mask pattern 514 may be formed of silicon nitride, polysilicon, a spin-on hardmask (SOH) material, or a combination thereof, but the present disclosure is not limited to this example.
- the SOH material may be formed of a hydrocarbon compound or a derivative thereof having a relatively high carbon content of about 85 wt % to about 99 wt % carbon based on the total weight of the SOH material.
- a stacked structure SS of a plurality of sacrificial semiconductor layers 106 S and a plurality of nanosheet semiconductor layers NS is formed by using a mask pattern MP as an etching mask, and a plurality of trenches TR is formed by etching a part of the substrate 102 .
- a plurality of fin-type active areas FA defined by a plurality of trenches TR may be formed in each of the first region R 1 and the second region R 2 .
- a stacked structure SS of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS remains on the plurality of fin-type active areas FA.
- a device isolation film 114 is formed within a plurality of trenches TR.
- the device isolation film 114 may include an insulating liner 114 A that conformally covers an inner wall of a plurality of trenches TR.
- the insulating liner 114 A may conformally cover a bottom surface of the trench TR, sidewalls of the fin-type active areas FA, sidewalls of the stacked structure SS of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS, and sidewalls of the mask pattern MP.
- a gap fill insulating film 114 B may be formed on the insulating liner 114 A and fill the plurality of trenches TR.
- the device isolation film 114 may be formed to cover the sidewall of the stacked structure SS and the sidewall of the mask pattern MP.
- the insulating liner 114 A covering the inner walls of the plurality of trenches TR may include an oxide film, a nitride film, an oxynitride film, polysilicon, or a combination thereof. In some embodiments, the insulating liner 114 A may have a thickness of about 10-100 ⁇ .
- the gap fill insulating film 114 B may be made of an oxide film. In some embodiments, the gap fill insulating film 114 B may include an oxide film formed by a deposition process or a coating process. In some embodiments, the gap fill insulating film 114 B may include an oxide film formed by a flowable chemical vapor deposition (FCVD) process or a spin coating process.
- FCVD flowable chemical vapor deposition
- a recess process of removing the mask pattern MP remaining on the stacked structure SS of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS and removing the device isolation film 114 from the upper portion by a certain thickness is performed.
- the recess process may be performed such that the upper surface of the device isolation film 114 is to be at a level approximately equal to or similar to the upper surface 104 of the fin-type active area FA.
- the upper surface of the device isolation film 114 may be at substantially the same level as the upper surface 104 of the fin-type active area FA.
- the sidewall of the stacked structure SS of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS on the plurality of fin-type active areas FA may be exposed. Items described as “substantially the same” or “substantially equal” may be exactly the same or equal, or may be the same or equal within acceptable variations that may occur, for example, due to manufacturing processes.
- a dry etching, a wet etching, or a dry-and-wet combined etching process may be used.
- an ion implantation process for implanting the impurity ions for controlling the threshold voltage into the upper part of the plurality of fin-type active areas FA and the plurality of nanosheet semiconductor layers NS.
- phosphorus (P) or arsenic (As) ions may be implanted into the first region R 1 as impurities, and boron (B) ions may be implanted into the second region R 2 as impurities.
- a blocking film 120 is formed on the first region R 1 to cover a part of the upper surface the sidewalls of the stacked structure SS of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS.
- the blocking film 120 may have an opening 120 O exposing the remaining part of the upper surface of the stacked structure SS of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS.
- the blocking film 120 may cover a part of the upper surface of the uppermost nanosheet semiconductor layer NS among the plurality of nanosheet semiconductor layers NS while not covering the remaining part of the upper surface of the uppermost nanosheet semiconductor layer NS.
- the blocking film 120 may be formed to cover opposite outside portions of the stacked structure SS of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS in the X direction, while leaving inside portions between the two opposing outside portions exposed.
- the blocking film 120 in the first region R 1 may cover a part of the upper surface of the stacked structure SS and the upper surface of the device isolation film 114 together with the sidewall.
- the blocking film 120 may include, for example, nitride.
- the blocking film 120 may be formed of silicon nitride, polysilicon, or a combination thereof, but the present disclosure is not limited to this example.
- the blocking film 120 may be formed only in the first region R 1 and may not be formed in the second region R 2 .
- At least one dummy gate structure (DGS) extending across at least a portion of the plurality of fin-type active areas FA are formed on the fin-type active area FA where the stacked structure SS of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS are formed, in each of the first region R 1 and the second region R 2 .
- DGS dummy gate structure
- the dummy gate structure may have a structure in which an oxide film D 152 , a dummy gate layer D 154 , and a capping layer D 156 are sequentially stacked.
- the oxide film D 152 , the dummy gate layer D 154 , and the capping layer D 156 may be sequentially formed to cover the exposed surface of the stacked structure SS of the plurality of sacrificial semiconductor layers 106 S covering the plurality of fin-type active areas FA and the plurality of nanosheet semiconductor layers NS, and the upper surface of the device isolation film 114 . Then the oxide film D 152 , the dummy gate layer D 154 , and the capping layer D 156 may be patterned, such that they are left only in certain portions.
- the dummy gate layer D 154 may be made of polysilicon, and the capping layer D 156 may be made of a silicon nitride film, but the present disclosure is not limited to this example.
- a gate spacer 130 is formed to cover both sidewalls of the dummy gate structure DGS.
- a spacer layer may be formed on the substrate 102 on which the dummy gate structure DGS is formed, and then the spacer layer may be etched back to leave the gate spacer 130 .
- the gate spacer 130 may include, for example, a silicon nitride film.
- An edge dummy gate structure DGSS that is a part of the dummy gate structure DGS may be formed over the upper surface and sidewalls of the stacked structure SS.
- the oxide film D 152 of the edge dummy gate structure DGSS and the dummy gate layer D 154 may be formed over the upper surface and sidewalls of the stacked structure SS.
- the oxide film D 152 and the dummy gate layer D 154 of the edge dummy gate structure DGSS may be overlapped with the blocking film 120 in the vertical direction (Z direction).
- the blocking film 120 is between the oxide film D 152 of the edge dummy gate structure DGSS and the upper surface and sidewalls of the stacked structure SS so that the edge dummy gate structure DGSS and the stacked structure SS may be spaced apart from each other with the blocking film 120 therebetween.
- the oxide film D 152 and the stacked structure SS of the edge dummy gate structure DGSS may contact each other.
- a plurality of nanosheet stacked structures NSS including a plurality of nanosheets N 1 , N 2 , and N 3 are formed from the plurality of nanosheet semiconductor layers NS by removing a part of the stacked structure SS of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS by using the dummy gate structure DGS and the gate spacer 130 as an etching mask, and a plurality of sacrificial semiconductor patterns 106 are formed from the plurality of sacrificial semiconductor layers 106 S.
- the fin-type active area FA may be exposed between the plurality of respective nanosheet stacked structures NSS.
- a part of an upper portion of the fin-type active area FA may be removed together.
- the part of the upper portion of the fin-type active area FA may be removed, thereby forming a recess portion in the upper surface of the of the fin-type active area FA.
- both sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 and the plurality of sacrificial semiconductor patterns 106 , which are respectively included in the plurality of nanosheets NSS, are perpendicular to the main surface of the substrate 102 , but the present disclosure is not limited to this example.
- a recess region 106 R is formed between the plurality of respective nanosheets N 1 , N 2 , and N 3 by removing a part of the plurality of sacrificial semiconductor patterns 106 exposed on both sides of each of the plurality of nanosheet stacked structures NSS by using an isotropic etching process for the second region R 2 . While the recess region 106 R is formed in the second region R 2 , the recess region 106 R may not be formed in the first region R 1 because the first region R 1 is covered by a mask layer (not shown).
- Both sidewalls of the plurality of sacrificial semiconductor patterns 106 exposed in the recess region 106 R are shown as being perpendicular to the main surface of the substrate 102 , but the present disclosure is not limited to this example.
- the isotropic etching process for forming the recess region 106 R may be performed by using a wet etch process which uses etch selectivity differences between the plurality of sacrificial semiconductor patterns 106 and the plurality of nanosheets N 1 , N 2 , and N 3 .
- the width of the plurality of sacrificial semiconductor patterns 106 in the horizontal direction in which the recess region 106 R is formed and remained in the second region R 2 may be similar to the width of the dummy gate layer D 154 in the horizontal direction.
- the width in the horizontal direction of the recess region 106 R may be substantially the same as the width in the horizontal direction of the lower portion of the gate spacer 130 .
- the width of the plurality of sacrificial semiconductor patterns 106 in the horizontal direction in which the recess region 106 R is formed and remained in the second region R 2 may be greater than the width of the dummy gate layer D 154 in the horizontal direction.
- the width in the horizontal direction of the recess region 106 R may be less than the width in the horizontal direction of the lower portion of the gate spacer 130 .
- the width of the plurality of sacrificial semiconductor patterns 106 in the horizontal direction in which the recess region 106 R is formed and remained in the second region R 2 may be less than the width of the dummy gate layer D 154 in the horizontal direction.
- the width in the horizontal direction of the recess region 106 R may be greater than the width in the horizontal direction of the lower portion of the gate spacer 130 .
- an insulating spacer 140 is formed in the second region R 2 to fill the recess region 106 R formed between the plurality of respective nanosheets N 1 , N 2 , and N 3 .
- the insulating spacer 140 may include a silicon nitride film.
- the insulating spacer 140 may be formed by stacking a plurality of insulating layers.
- the width of the insulating spacer 140 in the horizontal direction may be substantially similar to the width of the lower portion of the gate spacer 130 in the horizontal direction. In other embodiments, the width of the insulating spacer 140 in the horizontal direction may be less than or greater than the width of the lower portion of the gate spacer 130 in the horizontal direction.
- At least one sidewall of the insulating spacer 140 is perpendicular to the main surface of the substrate 102 , but the present disclosure is not limited to this example.
- the sidewalls of the plurality of nanosheets N 1 , N 2 and N 3 and the surface of the fin-type active area FA exposed between the respective nanosheet stacked structures NSS are exposed to a cleaning atmosphere to thereby remove a native oxide film from the exposed surfaces.
- a first source/drain region 162 is formed by allowing a semiconductor material to be epitaxially grown from both exposed sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 and the exposed surface of the fin-type active area FA.
- a second source/drain region 164 is formed by allowing a semiconductor material to be epitaxially grown from both exposed sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 and the exposed surface of the fin-type active area FA.
- a mask layer (not shown) covering the second region R 2 may be formed while the first source/drain region 162 is formed in the first region R 1 , and the mask layer (not shown) covering the first region R 1 may be formed while the second source/drain region 164 is formed in the second region R 2 .
- the first source/drain region 162 may include a first cover layer 162 A and a first buried layer 162 B.
- the first cover layer 162 A may be formed in the first region R 1 in order to cover exposed sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 , sidewalls of the plurality of sacrificial semiconductor patterns 106 , and the exposed surface of the fin-type active area FA, and the first buried layer 162 B may be formed on the first cover layer 162 A in the first region R 1 to fill a space between the plurality of nanosheet stacked structures NSS.
- the upper surface of the first cover layer 162 A may be at the same vertical height as the upper surface of the first buried layer 162 B
- the first source/drain region 162 may include Ge.
- the first cover layer 162 A may be made of a semiconductor material including Si
- the first buried layer 162 B may be made of a semiconductor material including Ge.
- the first cover layer 162 A may be made of a semiconductor material that does not include Ge.
- the first cover layer 162 A may be made of a semiconductor material such as Si.
- the first buried layer 162 B may be made of a compound semiconductor material such as SiGe containing Ge or a semiconductor material such as Ge rather than the first cover layer 162 A.
- the first buried layer 162 B may have a multi-layer structure of a semiconductor material including Ge and a semiconductor material including Si which covers the first cover layer 162 A.
- At least a portion of the first source/drain region 162 may include boron (B) ions as impurities.
- the second source/drain region 164 may include a second cover layer 164 A and a second buried layer 164 B.
- the second cover layer 164 A may be formed to cover the exposed sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 in the second region R 2
- the second buried layer 164 B may be formed on the second cover layer 164 A in the second region R 2 to fill a space between the plurality of nanosheet stacked structures NSS.
- Each second cover layer 164 A may have the same height in the Z direction as the adjacent nanosheets N 1 , N 2 , and N 3 , and may have a rounded shape in the X direction.
- the second source/drain region 164 may include Si.
- the second source/drain region 164 may not include Ge, unlike the first source/drain region 162 .
- the second cover layer 164 A may be made of a semiconductor material including Si, and the second buried layer 164 B may be made of a semiconductor material such as Si or a compound semiconductor material such as SiC.
- At least a portion of the second source/drain regions 164 may include phosphorus (P) or arsenic (As) ions as impurities.
- a protective film 138 is formed to cover a resultant structure of FIG. 11 in which the first source/drain region 162 and the second source/drain region 164 are formed.
- the protective film 138 may be formed to conformally cover the gate spacers 130 and upper surfaces of the first source/drain region 162 and the second source/drain region 164 .
- the protective film 138 may include a silicon nitride layer.
- an ALD or CVD process may be used.
- the protective film 138 may be omitted.
- the portion of the protective film 138 of each of the first region R 1 and the second region R 2 may be separately formed.
- the portion of the protective film 138 in the first region R 1 may be formed, then the second source/drain region 164 may be formed, and then the portion of the protective film 138 in the second region R 2 may be formed.
- the portion of the protective film 138 in the second region R 2 may be formed, then the first source/drain region 162 may be formed, and then the portion of the protective film 138 in the first region R 1 may be formed.
- the inter-gate insulating film 172 is planarized to remove the capping layer D 156 (see FIG. 11 ) covering the upper surface of the dummy gate layer D 154 .
- the gate spacer 130 , the protective film 138 , and the inter-gate insulating film 172 are then polished to remove a part of the thickness thereof from the upper portion thereof so that the upper surface of the inter-gate insulating film 172 is set to be approximately at the same level as the upper surface of the dummy gate layer D 154 .
- upper surfaces of the gate spacer 130 , the protective film 138 , dummy gate layer D 154 , and the inter-gate insulating film 172 may be at the same vertical level.
- the inter-gate insulating film 172 may include a silicon oxide film.
- a plurality of gate spaces GS are formed by removing the dummy gate layer D 154 exposed through the inter-gate insulating film 172 and the oxide film D 152 thereunder.
- An edge gate space GSS which is a part of the gate spaces GS, may be formed by removing the dummy gate layer D 154 of the edge dummy gate structure (DGSS of FIG. 11 ) and the oxide film D 152 thereunder.
- those gate space GS at locations corresponding to the edge dummy gate structures DGSS are referred to as an edge gate space GSS.
- a blocking film 120 is disposed on the bottom surface of the edge gate spaces GSS in the first region R 1 so that the surfaces of the plurality of nanosheets N 1 and N 2 included in the nanosheet stacked structure NSS in the edge gate spaces GSS and the surfaces of the plurality of sacrificial semiconductor patterns 106 may not be exposed.
- the surfaces of the plurality of nanosheets N 1 , N 2 , and N 3 and the surfaces of the plurality of sacrificial semiconductor patterns 106 are covered by the blocking film 120 in the edge gate spaces GSS in the first region R 1 so that only the gate spacer 130 and the blocking film 120 may be exposed in the edge gate spaces GSS.
- the blocking film 120 is not disposed in the second region R 2 , the surfaces of the plurality of nanosheets N 1 , N 2 , N 3 and the surfaces of the plurality of sacrificial semiconductor patterns 106 may be exposed in the edge gate space GSS in the second region R 2 .
- the uppermost nanosheet N 3 of the nanosheet stacked structure NSS may be exposed through the rest of the plurality of gate spaces GS except for the edge gate spaces GSS.
- the uppermost nanosheet N 3 of the nanosheet stacked structure NSS may be exposed through the rest of the plurality of gate spaces GS, including the edge gate spaces GSS.
- a part of the plurality of sacrificial semiconductor patterns 106 remaining on the fin-type active area FA is removed through a part of the plurality of gate spaces GS, to thereby expose a part of the surface of each of the plurality of nanosheets N 1 , N 2 , and N 3 , and a part of the upper surface 104 of the fin-type active area FA through the gate spaces GS.
- the gate spaces GS may be extended to a portion where the plurality of sacrificial semiconductor patterns 106 are partially removed.
- the plurality of sacrificial semiconductor patterns 106 are not exposed through the edge gate space GSS covered with the blocking film 120 in the first region R 1 , the plurality of sacrificial semiconductor patterns 106 at the lower side of the edge gate space GSS are not removed but remain, and the plurality of sacrificial semiconductor patterns 106 at the lower side of the remaining portion of the plurality of gate spaces GS except for the edge gate spaces GSS are removed so that a part of the surface of each of the plurality of nanosheets N 1 , N 2 , and N 3 and a part of an upper surface 104 of the fin-type active area FA may be exposed through the gate spaces GS. Therefore, in the first region R 1 , the rest of the plurality of gate spaces GS except for the edge gate spaces GSS may be extended to a portion where a part of the plurality of sacrificial semiconductor patterns 106 is removed.
- the sacrificial semiconductor pattern 106 covered with the blocking film 120 which remains by not being removed, may be referred to as a residual semiconductor pattern.
- the sacrificial semiconductor pattern 106 in the lower side of all the gate spaces GS including the edge gate space GSS is removed so that a part of each of the plurality of nanosheets N 1 , N 2 , and N 3 and a part of the upper surface 104 of the fin-type active area FA may be exposed through the gate space GS.
- the plurality of gate spaces GS may be extended to the portion where a part of the plurality of sacrificial semiconductor patterns 106 is removed.
- the plurality of insulating spacers 140 may remain on either side of the second source/drain regions 164 .
- the etchant supplied through the edge gate space GSS, among the plurality of gate spaces GS is supplied in three directions (Y direction, -Y direction, and one of X direction and -X direction) toward the plurality of sacrificial semiconductor patterns 106 , and the etchant supplied through the rest of the plurality of gate spaces GS may be supplied towards the plurality of sacrificial semiconductor patterns 106 in two directions (Y direction and -Y direction).
- a portion of one side of the first source/drain region 162 facing the edge gate space GSS may be further removed, which is damage.
- the portion of the gate dielectric layer e.g., gate dielectric layer 145 in FIG. 15
- a short circuit may occur between the first source/drain region 162 and the gate electrode (e.g., gate electrode 150 of FIG. 15 ).
- the etchant is not supplied to the sacrificial semiconductor pattern 106 at the lower side of the edge gate space GSS due to the blocking film 120 and remains as the residual semiconductor pattern, damage to the first source/drain region 162 may be prevented, thereby preventing a short circuit between the first source/drain region 162 and the gate electrode 150 .
- the second source/drain region 164 may not be damaged even when the blocking film 120 is not disposed.
- the gate dielectric layer 145 is formed on the surfaces exposed in the plurality of gate spaces GS, and a plurality of gate electrodes 150 are formed on the gate dielectric layer 145 , which fills the plurality of gate spaces GS.
- the gate dielectric layer 145 may have a stacked structure of an interfacial layer and a high-k dielectric layer.
- the interfacial layer may heal an interface defect with the high-k dielectric layer on the upper surface of the fin-type active area FA and the surfaces of the plurality of nanosheets N 1 , N 2 , and N 3 .
- the interfacial layer may include a low dielectric material layer having a dielectric constant of about 9 or less, such as a silicon oxide film, a silicon oxynitride film, or a combination thereof.
- the interfacial layer may include silicate, a combination of silicate and a silicon oxide film, or a combination of a silicate and a silicon oxynitride film. In some embodiments, the interfacial layer may be omitted.
- the high-k dielectric layer may be made of a material having a dielectric constant greater than that of the silicon oxide film. For example, the high-k dielectric layer may have a dielectric constant of about 10 to 25.
- the high-k dielectric layer may be formed by atomic layer deposition (ALD), chemical vapor deposition (CVD), or physical vapor deposition (PVD).
- the high-k dielectric layer may have a thickness of about 10 to 40 ⁇ , but the present disclosure is not limited to this example.
- the gate electrode 150 may include a metal-containing layer for controlling the work function and a metal-containing layer for filling the upper space of the metal-containing layer for controlling the work function.
- the gate electrode 150 may have a structure in which a metal nitride layer, a metal layer, a conductive capping layer, and a gap-fill metal layer are sequentially stacked.
- the metal nitride layer and the metal layer may be formed by ALD, metal organic ALD (MOALD), or metal organic CVD (MOCVD) process, respectively.
- the conductive capping layer may serve as a protective film for preventing the surface of the metal layer from being oxidized.
- the conductive capping layer may serve as a wetting layer for facilitating deposition when another conductive layer is deposited on the metal layer.
- the gap-fill metal layer may extend over the conductive capping layer.
- the gap fill metal layer may be formed by an ALD, CVD, or PVD process.
- the gate electrode 150 may have a stacked structure of TiAlC/TiN/W, a stacked structure of TiN/TaN/TiAlC/TiN/W, or a stacked structure of TiN/TaN/TiN/TiAlC/TiN/W.
- a TiAlC layer or a TiN layer may serve as a metal-containing layer for controlling a work function.
- the portion of the gate electrode 150 formed in each of the first region R 1 and the second region R 2 may have a different stacking structure.
- the metal for controlling the work function may be made of another material.
- the gate electrode 150 may include a main gate portion 150 M covering the upper surface of the nanosheet stacked structure NS S including the plurality of nanosheets N 1 , N 2 , and N 3 , and a plurality of sub-gate portions 150 S formed in a space between each of the nanosheets N 1 , N 2 , and N 3 and the fin-type active area FA.
- the horizontal length of each of the plurality of sub-gate portions 150 S may have the same value as the horizontal length of the main gate portion 150 M. In some embodiments, the horizontal length of each of the plurality of sub-gate portions 150 S may be greater or less than the horizontal length of the main gate portion 150 M.
- the gate dielectric layer 145 may surround the plurality of sub-gate portions 150 S, respectively, and the gate dielectric layer 145 may cover bottom and side surfaces of the main gate portion 150 M.
- the plurality of gate electrodes 150 may include a dummy gate electrode 150 D filling the edge gate space GSS of the plurality of gate spaces GS, and a real gate electrode 150 R filling a remaining portion of the plurality of gate spaces GS except for the edge gate space GSS.
- dummy gate electrodes in memory devices are not effective to cause transmission of data to external devices. For instance, a dummy gate electrode may not be electrically connected to gates of memory cells, or if a dummy gate electrode is electrically connected to gates of dummy memory cells, such dummy gate electrode may not be activated or if activated, may not result in communication of any data in such dummy memory cells to a source external to the memory device.
- the plurality of sub-gate portions 150 S are formed in the portion where the plurality of sacrificial semiconductor patterns 106 are removed so that the dummy gate electrode 150 D includes only the main gate portion 150 M and may not include the plurality of sub-gate portions 150 S.
- the dummy gate electrode 150 D may include the main gate portion 150 M and the plurality of sub-gate portions 150 S.
- a plurality of insulating spacers 140 may be disposed on both ends of each of the plurality of sub-gate portions 150 S of the real gate electrode 150 R with a gate dielectric layer 145 therebetween.
- the insulating spacers 140 may cover both sidewalls of each of the plurality of sub-gate portions 150 S with the gate dielectric layer 145 therebetween.
- the plurality of insulating spacers 140 may be disposed on one end of each of the plurality of sub-gate portions 150 S of the dummy gate electrode 150 D with the gate dielectric layer 145 therebetween.
- the insulating spacers 140 may cover one sidewall of each of the plurality of sub-gate portions 150 S of the dummy gate electrode 150 D, specifically, one sidewall nearest the real gate electrode 150 R with the gate dielectric layer 145 therebetween.
- the insulating spacers 140 may not be disposed on both ends of each of the plurality of sub-gate portions 150 S of the real gate electrode 150 R.
- the inter-layer insulating film 174 and the inter-gate insulating film 172 are partially etched to form a plurality of contact holes 190 H which expose the first source/drain region 162 and the plurality of second source/drain regions 164 in the first region R 1 and the second region R 2 , respectively.
- a first metal silicide film 166 and a second metal silicide film 168 are formed on the upper surfaces of the plurality of first source/drain regions 162 and the upper surfaces of the plurality of second source/drain regions 164 which are exposed through the plurality of contact holes 190 H.
- the first metal silicide film 166 and the second metal silicide film 168 may be made of titanium silicide, but the present disclosure is not limited to this example.
- a plurality of contact plugs 190 which fill the plurality of contact holes 190 H, are formed to form a semiconductor device 1 .
- the contact plugs 190 in the first region R 1 may be connected to the first source/drain region 162 through the first metal silicide film 166
- the contact plugs 190 in the second region R 2 may be connected to the second source/drain region 164 through the second metal silicide film 168 .
- the first metal silicide film 166 and the second metal silicide film 168 may cover lower side and bottom surfaces of the contact plugs 190 .
- the semiconductor device 1 includes a fin-type active area FA protruding from the substrate 102 and extending lengthwise in a first direction (X direction), and a plurality of nanosheet stacking structures NSS facing the upper surface 104 of the fin-type active area FA at a position spaced above the upper surface 104 of the fin-type active area FA.
- a trench TR limiting the fin-type active area FA may be formed in the substrate 102 .
- an item, layer, or portion of an item or layer described as extending “lengthwise” in a particular direction has a length in the particular direction and a width perpendicular to that direction, where the length is greater than the width.
- the bottom sidewalls of the fin-type active area FA may be covered with the device isolation film 114 filling the trench TR, respectively.
- the device isolation film 114 may include an insulating liner 114 A that conformally covers the inner wall of the trench TR, and a gap fill insulating film 114 B on the insulating liner 114 A and filling the trench TR.
- the level of the upper surface 104 of the fin-type active area FA and the level of the upper surface of the device isolation film 114 may be the same or similar to each other.
- the level of the upper surface 104 of the fin-type active area FA and the level of the upper surface of the device isolation film 114 may be substantially the same.
- the plurality of nanosheets stacked structures NSS are spaced in the Z direction from the upper surface 104 of the fin-type active area FA.
- the plurality of nanosheet stack structures NSS may include a plurality of nanosheets N 1 , N 2 , and N 3 extending on the substrate 102 in parallel in the X and Y directions with the upper surface of the fin-type active area FA.
- the plurality of nanosheets N 1 , N 2 , and N 3 constituting one nanosheet stacked structure NSS is sequentially stacked on the upper surface 104 of the fin-type active area FA one by one. It is illustrated in the present example that one nanosheet stacked structure NSS includes three nanosheets N 1 , N 2 , and N 3 , but the technical idea of the present disclosure is not limited to the illustrated example.
- each of the plurality of nanosheets N 1 , N 2 , and N 3 may include one nanosheet, or may include a plurality of nanosheets that are variously selected as needed.
- Each of the plurality of nanosheets N 1 , N 2 , and N 3 may have a channel region.
- the blocking film 120 may cover a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS.
- a plurality of sacrificial semiconductor patterns 106 namely, a plurality of residual semiconductor patterns, may be disposed between the fin-type active area FA and each of the plurality of nanosheets N 1 , N 2 , and N 3 included in a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS.
- a plurality of gate electrodes 150 extend lengthwise in a second direction (Y direction) intersecting the first direction on the fin-type active area FA.
- the plurality of gate electrodes 150 may overlap with at least a part of each of the plurality of nanosheet stack structures NSS in the vertical direction (Z direction).
- the real gate electrode 150 R in the first region R 1 , and each of the real gate electrode 150 R and the dummy gate electrode 150 D in the second region R 2 among the plurality of gate electrodes 150 may be formed to surround at least a part of the plurality of nanosheets N 1 , N 2 , and N 3 while covering the nanosheet stacked structure NSS.
- the gate electrode 150 may include a main gate portion 150 M covering the upper surface of the nanosheet stacked structure NSS and a plurality of sub-gate portions 150 S which are connected to the main gate portion 150 M and are formed at a space between the fin-type active area FA and the plurality of nanosheets N 1 , N 2 , and N 3 , namely, at the lower side of each of the plurality of nanosheets N 1 , N 2 , and N 3 .
- the second thickness which is the thickness of each of the plurality of sub-gate portions 150 S, may be less than the first thickness, which is the thickness of the main gate portion 150 M.
- the first thickness of the main gate portion 150 M and the second thickness of each of the plurality of sub-gate portions 150 S refer to a size in the Z direction, respectively.
- the length of each of the plurality of sub-gate portions 150 S may have the same value as the length of the main gate portion 150 M.
- the horizontal length of each of the plurality of sub-gate portions 150 S may be greater or less than the horizontal length of the main gate portion 150 M.
- the length of the plurality of sub-gate portions 150 S and the length of the main gate portion 150 M each refers to a length in the X direction.
- a gate dielectric layer 145 is formed between the nanosheet stacked structure NSS and the gate electrode 150 .
- the dummy gate electrode 150 D of the first region R 1 among the plurality of gate electrodes 150 may include only the main gate portion 150 M and may not include the sub-gate portion 150 S.
- the dummy gate electrode 150 D in the first region R 1 among the plurality of gate electrodes 150 may be disposed on the blocking film 120 .
- the dummy gate electrode 150 D in the first region R 1 may be spaced apart from the nanosheet stacked structure NSS and the plurality of residual semiconductor patterns 106 with the blocking film 120 and the gate dielectric layer 145 therebetween, and the gate dielectric layer 145 in contact with the dummy gate electrode 150 D in the first region R 1 may be spaced apart from the nanosheet stacked structure NSS and the plurality of residual semiconductor patterns 106 with the blocking film 120 therebetween.
- the real gate electrode 150 R in the first region R 1 , and each of the real gate electrodes 150 R and the dummy gate electrode 150 D in the second region R 2 may be spaced apart from the nanosheet stacked structure NSS with the gate dielectric layer 145 therebetween, and the real gate electrode 150 R of the first region R 1 , and each of the real gate electrodes 150 R and the dummy gate electrode 150 D in the second region R 2 may be electrically connected to the plurality of nanosheets N 1 , N 2 , and N 3 included in the nanosheet stacked structure NSS.
- items described as being “electrically connected” are configured such that an electrical signal can be passed from one item to the other.
- the plurality of nanosheets N 1 , N 2 , and N 3 may be made of a single material. In some embodiments, the plurality of nanosheets N 1 , N 2 , and N 3 may be made of the same material as the constituent material of the substrate 102 .
- a plurality of first source/drain regions 162 and a plurality of second source/drain regions 164 are formed on the fin-type active area FA in the first region R 1 and the second region R 2 , respectively.
- the plurality of first source/drain regions 162 and the plurality of second source/drain regions 164 are connected to one end of a plurality of neighboring nanosheets N 1 , N 2 , and N 3 , respectively.
- the first source/drain region 162 may include a first cover layer 162 A and a first buried layer 162 B.
- the first cover layer 162 A may be formed in the first region R 1 in order to cover sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 , sidewalls of the plurality of residual semiconductor patterns, a part of the fin-type active area FA, and a part of the gate dielectric layer 145
- the first buried layer 162 B may be formed on the first cover layer 162 A in the first region R 1 to fill a space between the plurality of nanosheet stacked structures NSS.
- the second source/drain region 164 may include a second cover layer 164 A and a second buried layer 164 B.
- the second cover layer 164 A may be formed to cover the exposed sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 in the second region R 2
- the second buried layer 164 B may be formed on the second cover layer 164 A in the second region R 2 to fill a space between the plurality of nanosheet stacked structures NSS.
- One first source/drain region 162 may include a first cover layer 162 A that extends as one body on the sidewall of each of the plurality of nanosheets N 1 , N 2 , and N 3
- one second source/drain region 164 may include a plurality of second cover layers 164 A that are in contact with and spaced from the sidewall of each of the plurality of nanosheets N 1 , N 2 , and N 3 .
- the first cover layer 162 A may be made of a material different from the residual semiconductor pattern.
- the first cover layer 162 A may be made of a semiconductor material including Ge, and the residual semiconductor pattern may be made of a semiconductor material including Ge.
- a first metal silicide film 166 and a second metal silicide film 168 may be formed on the plurality of first source/drain regions 162 and the plurality of second source/drain regions 164 , respectively. In some embodiments, the first metal silicide film 166 and the second metal silicide film 168 may be omitted.
- a gate spacer 130 and a protective film 138 are formed on the plurality of nanosheets stacked structures NSS in order to cover the sidewalls of the gate electrode 150 in order.
- the gate spacer 130 and the protective film 138 may include a silicon nitride layer, but the present disclosure is not limited this example. In some embodiments, the protective film 138 may be omitted.
- the gate spacer 130 and the protective film 138 may cover the sidewalls of the main gate portion 150 M of the gate electrodes 150 .
- the protective film 138 may cover a portion of the upper surface of the plurality of first source/drain regions 162 and the plurality of second source/drain regions 164 .
- An insulating spacer 140 in contact with the second source/drain region 164 is formed in a space between the plurality of respective nanosheets N 1 , N 2 , and N 3 in the second region R 2 .
- the insulating spacer 140 may be between the sub-gate portion 150 S and the second source/drain region 164 in the space between the fin-type active area FA and each of the plurality of nanosheets N 1 , N 2 , and N 3 .
- the insulating spacers 140 may include a silicon nitride film.
- the insulating spacers 140 may cover at least a part of the plurality of sub-gate portions 150 S with the gate dielectric layer 145 therebetween.
- An inter-gate insulating film 172 and an inter-layer insulating film 174 are sequentially formed on the plurality of first source/drain regions 162 and the plurality of second source/drain regions 164 .
- the inter-gate insulating film 172 and the inter-layer insulating film 174 may include a silicon oxide film, but the present disclosure is not limited to this example.
- the contact plugs 190 may be connected to the plurality of first source/drain regions 162 and the plurality of second source/drain regions 164 , respectively.
- the contact plugs 190 may penetrate the inter-layer insulating film 174 , the inter-gate insulating film 172 , and the protective film 138 , to thereby be connected to the plurality of first source/drain regions 162 and the plurality of second source/drain regions 164 , respectively.
- the first metal silicide layer 166 may be between the first source/drain region 162 and the contact plug 190 .
- the second metal silicide film 168 may be between the second source/drain region 164 and the contact plug 190 .
- the contact plugs 190 may be formed of a metal, a conductive metal nitride, or a combination thereof.
- the contact plug 190 may be formed of W, Cu, Al, Ti, Ta, TiN, TaN, an alloy thereof, or a combination thereof, but the technical idea of the present disclosure is limited to the illustrated examples.
- the semiconductor device 1 since the semiconductor device 1 according to the present disclosure has a blocking film 120 , in the first region R 1 , for preventing the first source/drain region 162 from being damaged in the process of forming the gate electrode 150 , particularly, the sub-gate portion 150 S, a short circuit between the first source/drain region 162 and the gate electrode 150 may be prevented, and since the semiconductor device 1 includes the insulating spacer 140 in the second region, a short circuit between the second source/drain region 164 and the gate electrode 150 may be prevented, thereby ensuring reliability.
- FIGS. 17 to 23 are cross-sectional views illustrating a method of manufacturing a semiconductor device, according to embodiments of the present disclosure, and a semiconductor device manufactured by the method, according to a process order. Specifically, FIGS. 17 to 23 are cross-sectional views taken along the X-Z plane about the operations after the operations of FIGS. 5A and 5B , and the points that have already been explained with reference to FIGS. 1 to 16 will be omitted in the description of FIGS. 17 to 23 .
- a blocking film 120 is formed on each of the first region R 1 and the second region R 2 to cover a part of the upper surface of the stacked structure of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS and the sidewalls.
- the blocking film 120 may have an opening 120 O exposing the remaining part of the upper surface of the stacked structure SS of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS.
- the opening 120 O of the blocking film 120 may cover a part of the upper surface of the uppermost nanosheet semiconductor layer NS among the plurality of nanosheet semiconductor layers NS while not covering the remaining part of the upper surface of the uppermost nanosheet semiconductor layer NS.
- the blocking film 120 in each of the first region R 1 and the second region R 2 may cover a part of the upper surface of the stacked structure SS and the upper surface of the device isolation film 114 together with the sidewall.
- At least one dummy gate structure (DGS) extending lengthwise across at least a portion of the plurality of fin-type active areas FA are formed on the fin-type active area FA where the stacked structure of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS is formed, and a gate spacer 130 covering both sidewalls of the dummy gate structure DGS is formed in each of the first region R 1 and the second region R 2 .
- the dummy gate structure (DGS) may have a structure in which an oxide film D 152 , a dummy gate layer D 154 , and a capping layer D 156 are sequentially stacked.
- the oxide film D 152 and the dummy gate layer D 154 of the edge dummy gate structure DGSS may be overlapped with the blocking film 120 in the vertical direction (Z direction).
- a blocking film 120 is between the oxide film D 152 of the edge dummy gate structure DGSS and the upper surface and sidewalls of the stacked structure SS so that the edge dummy gate structure DGSS and the stacked structure may be spaced apart from each other with the blocking film 120 therebetween.
- a plurality of nanosheet stacked structures NSS including a plurality of nanosheets N 1 , N 2 and N 3 are formed from the plurality of nanosheet semiconductor layers NS by removing a part of the stacked structure of the plurality of sacrificial semiconductor layers 106 S and the plurality of nanosheet semiconductor layers NS by using the dummy gate structure DGS and the gate spacer 130 as an etching mask, and a plurality of sacrificial semiconductor patterns 106 are formed from the plurality of sacrificial semiconductor layers 106 S.
- recess regions 106 R are formed between the plurality of respective nanosheets N 1 , N 2 , and N 3 by removing a part of the plurality of sacrificial semiconductor patterns 106 exposed on both sides of each of the plurality of nanosheet stacked structures NSS by using an isotropic etching process for the second region R 2 .
- insulating spacers 140 are formed in the second region R 2 to fill the recess regions 106 R formed between the plurality of respective nanosheets N 1 , N 2 , and N 3 .
- the sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 and the surface of the fin-type active area FA exposed between the respective nanosheet stacked structures NSS are exposed to a cleaning atmosphere to thereby remove a native oxide film from the exposed surfaces.
- a first source/drain region 162 is formed by allowing a semiconductor material to be epitaxially grown from both exposed sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 and the exposed surface of the fin-type active area FA
- a second source/drain region 164 is formed by allowing a semiconductor material to be epitaxially grown from both exposed sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 and the exposed surface of the fin-type active area FA.
- the first source/drain region 162 may include a first cover layer 162 A and a first buried layer 162 B.
- the first cover layer 162 A may be formed in the first region R 1 in order to cover exposed both sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 , both sidewalls of the plurality of sacrificial semiconductor patterns 106 , and the exposed surface of the fin-type active area FA, and the first buried layer 162 B may be formed to fill a space between the plurality of nanosheet stacked structures NSS on the first cover layer 162 A in the first region R 1 .
- the second source/drain region 164 may include a second cover layer 164 A and a second buried layer 164 B.
- the second cover layer 164 A may be formed to cover the exposed both sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 in the second region R 2
- the second buried layer 164 B may be formed to fill a space between the plurality of nanosheet stacked structures NSS on the second cover layer 164 A in the second region R 2 .
- a protective film 138 an inter-gate insulating film 172 , a gate dielectric layer 145 , a gate electrode 150 , an inter-layer insulating film 174 , a plurality of contact holes 190 H, a first metal silicide film 166 , a second metal silicide film 168 , and a plurality of contact plugs 190 are formed as a semiconductor device 1 a.
- the real gate electrode 150 R of the plurality of gate electrodes 150 may include a main gate portion 150 M and a plurality of sub-gate portions 150 S.
- the dummy gate electrode 150 D includes only the main gate portion 150 M and may not include the plurality of sub-gate portions 150 S.
- the semiconductor device la may include a blocking film 120 covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS.
- the blocking films 120 formed in the first region R 1 and the second region R 2 may be referred to as a first blocking film and a second blocking film, respectively.
- a plurality of residual semiconductor patterns 106 may be disposed between the fin-type active area FA and each of the plurality of nanosheets N 1 , N 2 , and N 3 included in a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS.
- An insulating spacer 140 in contact with the second source/drain region 164 is formed in a space between the plurality of respective nanosheets N 1 , N 2 , and N 3 in the second region R 2 .
- the insulating spacer 140 may be between the sub-gate portion 150 S and the second source/drain region 164 and between the residual semiconductor pattern and the second source/drain region 164 , in the space between the plurality of respective nanosheets N 1 , N 2 , and N 3 .
- the semiconductor device 1 a includes a blocking film 120 , in the first region R 1 and the second region R 2 , for preventing the first source/drain region 162 and the second source/drain region 164 from being damaged in the process of forming a gate electrode, particularly a sub-gate portion 150 S, a short circuit between the first source/drain region 162 and the gate electrode 150 and/or between the second source/drain region 164 and the gate electrode 150 may be prevented, thereby ensuring reliability.
- FIGS. 24 to 27 are cross-sectional views illustrating a method of manufacturing a semiconductor device, according to embodiments of the present disclosure, and a semiconductor device manufactured by the method, according to a process order. Specifically, FIGS. 24 to 27 are cross-sectional views taken along the X-Z plane about operations after the operations of FIG. 8 , and the points that have already been described with reference to FIGS. 1 to 16 will be omitted in the description of FIGS. 24 to 27 .
- a recess region 106 R is formed between the plurality of respective nanosheets N 1 , N 2 , and N 3 by removing a part of the plurality of sacrificial semiconductor patterns 106 exposed on both sides of each of the plurality of nanosheet stacked structures NSS by using an isotropic etching process for each of the first region R 1 and the second region R 2 .
- the insulating spacer 140 filling the recess region 106 R formed between the plurality of respective nanosheets N 1 , N 2 , and N 3 is formed in the first region R 1 and the second region R 2 , respectively.
- the sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 and the surface of the fin-type active area FA exposed between the respective nanosheet stacked structures NSS are exposed to a cleaning atmosphere to thereby remove a native oxide film from the exposed surfaces.
- a first source/drain region 162 is formed by allowing a semiconductor material to be epitaxially grown from both exposed sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 and the exposed surface of the fin-type active area FA
- a second source/drain region 164 is formed by allowing a semiconductor material to be epitaxially grown from both exposed sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 and the exposed surface of the fin-type active area FA.
- the first source/drain region 162 may include a first cover layer 162 A and a first buried layer 162 B.
- the first cover layer 162 A may be formed in the first region R 1 in order to cover exposed both sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 , both sidewalls of the plurality of sacrificial semiconductor patterns 106 , and the exposed surface of the fin-type active area FA, and the first buried layer 162 B may be formed on the first cover layer 162 A in the first region R 1 to fill a space between the plurality of nanosheet stacked structures NSS.
- the second source/drain region 164 may include a second cover layer 164 A and a second buried layer 164 B.
- the second cover layer 164 A may be formed to cover the exposed both sidewalls of the plurality of nanosheets N 1 , N 2 , and N 3 in the second region R 2
- the second buried layer 164 B may be formed on the second cover layer 164 A in the second region R 2 to fill a space between the plurality of nanosheet stacked structures NSS.
- a protective film 138 an inter-gate insulating film 172 , a gate dielectric layer 145 , a gate electrode 150 , an inter-layer insulating film 174 , a plurality of contact holes 190 H, a first metal silicide film 166 , a second metal silicide film 168 , and a plurality of contact plugs 190 are formed as a semiconductor device 1 b.
- the semiconductor device 1 b may include a blocking film 120 covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS.
- the semiconductor device 1 b may include insulating spacers 140 in contact with the first source/drain region 162 and the second source/drain region 164 in a space between the plurality of respective nanosheets N 1 , N 2 , and N 3 in each of the first region R 1 and the second region R 2 .
- the insulating spacer 140 may be between the sub-gate portion 150 S and the first source/drain region 162 in a space between the plurality of nanosheets N 1 , N 2 , and N 3 in the first region, or may be between the sub-gate portion 150 S and the second source/drain region 164 in a space between the plurality of respective nanosheets N 1 , N 2 , and N 3 in the second region R 2 .
- the semiconductor device 1 b since the semiconductor device 1 b according to the present disclosure includes a blocking film 120 for preventing the first source/drain region 162 from being damaged in the process of forming the gate electrode 150 , particularly, the sub-gate portion 150 S and includes insulating spacers 140 in the first region R 1 and the second region R 2 , a short circuit between the first source/drain region 162 and the gate electrode 150 and/or between the second source/drain region 164 and the gate electrode 150 may be prevented, thereby ensuring reliability.
- FIG. 28 is a cross-sectional view illustrating a semiconductor device manufactured by a method of manufacturing a semiconductor device, according to embodiments of the present disclosure. Specifically, FIG. 28 is a cross-sectional view taken along the X-Z plane. The points that have already been described with reference to FIGS. 1 to 27 may be omitted in the description of FIG. 28 .
- the semiconductor device 1 c may include a blocking film 120 covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS.
- a plurality of residual semiconductor patterns 106 may be disposed between the fin-type active area FA and each of the plurality of nanosheets N 1 , N 2 , and N 3 included in a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS.
- the semiconductor device 1 c may include insulating spacers 140 in contact with the first source/drain region 162 and the second source/drain region 164 in a space between the plurality of respective nanosheets N 1 , N 2 , and N 3 in each of the first region R 1 and the second region R 2 .
- the insulating spacer 140 may be between the sub-gate portion 150 S and the first source/drain region 162 and between the residual semiconductor pattern and the first source/drain region 162 , respectively, in the space between the plurality of respective nanosheets N 1 , N 2 , and N 3 , in the first region, and may be between the sub-gate portion 150 S and the second source/drain region 164 and between the residual semiconductor pattern and the second source/drain region 164 , respectively, in the space between the plurality of respective nanosheets N 1 , N 2 , and N 3 , in the second region.
- the insulating spacers 140 may cover one sidewall of each of the plurality of sub-gate portions 150 S of the dummy gate electrode 150 D, specifically, one sidewall toward the real gate electrode 150 R with the gate dielectric layer 145 therebetween.
- the semiconductor device 1 c includes a blocking film 120 and insulating spacers 140 for preventing the first source/drain region 162 from being damaged in the process of forming the gate electrode 150 , particularly, the sub-gate portion 150 S, a short circuit between the first source/drain region 162 and the gate electrode 150 and/or between the second source/drain region 164 and the gate electrode 150 may be prevented, thereby ensuring reliability.
Abstract
Description
- This application claims the benefit of priority under 35 U.S.C. § 119 of Korean Patent Application No. 10-2018-0092677, filed Aug. 8, 2018, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
- The present disclosure relates to a semiconductor device, and more particularly, to a semiconductor device having a multi-gate metal-oxide-semiconductor field-effect transistor (MOSFET).
- As the degree of integration of semiconductor devices increases, the size of a semiconductor device is extremely reduced, and the scaling of the device is reaching its limit. Accordingly, in order to reduce the parasitic resistance and capacitance in the device and to improve the performance of the device, a new method is needed through the structural change of the device.
- The inventive concept provides a semiconductor device with a multi-gate metal-oxide-semiconductor field-effect transistor (MOSFET) that may improve the performance of the semiconductor device.
- In some embodiments, the disclosure is directed to a semiconductor device comprising: a fin-type active area extending lengthwise in a first direction and protruding from a substrate; a plurality of nanosheet stacked structures extending in parallel with an upper surface of the fin-type active area at a position spaced above the upper surface of the fin-type active area, each of the plurality of nanosheet stacked structures having a plurality of nanosheets having a channel region; a blocking film covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures; a gate electrode extending lengthwise in a second direction intersecting the first direction on the fin-type active area, the gate electrode including a real gate electrode surrounding the plurality of nanosheets and a dummy gate electrode disposed on the blocking film; and a gate dielectric layer between the real gate electrode and the plurality of nanosheets and between the dummy gate electrode and the blocking film.
- In some embodiments, the disclosure is directed to a semiconductor device comprising: a substrate including a first region and a second region; a fin-type active area extending lengthwise in a first direction and protruding from the substrate in each of the first region and the second region; a plurality of nanosheet stacked structures extending in parallel with an upper surface of the fin-type active area at a position spaced above the upper surface of the fin-type active area, each of the plurality of nanosheet stacked structures having a plurality of nanosheets having a channel region; a blocking film covering a part of an upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures, in the first region; a plurality of gate electrodes overlapping with at least a portion of each of the plurality of nanosheet stacked structures on the fin-type active area and extending lengthwise in a second direction intersecting the first direction; and a plurality of residual semiconductor patterns in a space between the fin-type active area and the plurality of nanosheets of the pair of nanosheet stacked structures covered by the blocking film among the plurality of nanosheet stacked structures, wherein a portion of the plurality of gate electrodes, which extends on the nanosheet stacked structures not covered by the blocking film, fills a space between the plurality of nanosheets and the fin-type active area.
- In some embodiments, the disclosure is directed to a semiconductor device comprising: a substrate including a first region and a second region; a fin-type active area extending lengthwise in a first direction and protruding from the substrate in each of the first region and the second region; a plurality of nanosheet stacked structures extending lengthwise in parallel with an upper surface of the fin-type active area at a position spaced above the upper surface of the fin-type active area, each of the plurality of nanosheet stacked structures having a plurality of nanosheets having a channel region; a first source/drain region and a second source/drain region which are disposed in the first region and the second region between the plurality of nanosheet stacked structures to be connected to the plurality of nanosheets and are made of different materials from each other; a first blocking film covering a part of an upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures, in the first region; a plurality of gate electrodes overlapping with at least a portion of each of the plurality of nanosheet stacked structures on the fin-type active area and extending in a second direction intersecting the first direction; and a gate dielectric layer between the plurality of gate electrodes and the plurality of nanosheets, wherein the plurality of nanosheets included in each of the pair of nanosheet stacked structures covered by the first blocking film are spaced apart from a gate dielectric film with the first blocking film therebetween, and wherein the plurality of nanosheets included in a remainder of the plurality of nanosheets stacked structures are in contact with the gate dielectric layer.
- Embodiments of the inventive concept will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings in which:
-
FIGS. 1 to 16 are cross-sectional views illustrating a method of manufacturing a semiconductor device, according to exemplary embodiments of the present disclosure, and a semiconductor device manufactured by the method, according to a process order; -
FIGS. 17 to 23 are cross-sectional views illustrating a method of manufacturing a semiconductor device, according to exemplary embodiments of the present disclosure, and a semiconductor device manufactured by the method, according to a process order; -
FIGS. 24 to 27 are cross-sectional views illustrating a method of manufacturing a semiconductor device, according to exemplary embodiments of the present disclosure, and a semiconductor device manufactured by the method, according to a process order; and -
FIG. 28 is a cross-sectional view illustrating a semiconductor device manufactured by a method of manufacturing a semiconductor device, according to exemplary embodiments of the present disclosure. Specifically,FIG. 28 is a cross-sectional view taken along the X-Z plane. -
FIGS. 1 to 16 are cross-sectional views illustrating a method of manufacturing a semiconductor device, according to exemplary embodiments of the present disclosure, and a semiconductor device manufactured by the method, according to a process order. Specifically,FIGS. 1, 2A, 3A, 4A, 5A, and 6 to 16 are cross-sectional views taken along the X-Z plane, andFIGS. 2B, 3B, 4B, and 5B are cross-sectional views taken along the Y-Z plane in each ofFIGS. 2A, 3A, 4A, and 5A , and since the same shape is shown in a first region R1 and a second region R2, the first region R1 is not distinguished from the second region R2. - Referring to
FIG. 1 , a plurality ofsacrificial semiconductor layers 106S and a plurality of nanosheet semiconductor layers NS are alternately stacked on asubstrate 102 having the first region R1 and the second region R2. In some embodiments, a PMOS transistor is formed in the first region R1 of thesubstrate 102, and an NMOS transistor is formed in the second region R2 to thereby form a CMOS device, but the present disclosure is not limited to this example. - The
substrate 102 may include a semiconductor such as Si or Ge or a compound semiconductor such as SiGe, SiC, GaAs, InAs, or InP. In some embodiments, thesubstrate 102 may include at least one of a Group III-V material and a Group IV material. The Group III-V material may be a binary, ternary, or quaternary compound including at least one Group III element and at least one Group V element. The Group III-V material may be a compound containing at least one element of In, Ga and Al as a Group III element and at least one element of As, P and Sb as a Group V element. For example, the Group III-V material may be selected from InP, InzGal-zAs (0≤Z≤1), and AlzGal-zAs (0≤Z≤1). The binary compound may be, for example, any one of InP, GaAs, InAs, InSb, and GaSb. The ternary compound may be any one of InGaP, InGaAs, AlInAs, InGaSb, GaAsSb, and GaAsP. The Group IV material may be Si or Ge. However, the Group III-V material and the Group IV material that may be used in the integrated circuit device according to the technical idea of the present disclosure are not limited to the above examples. The Group III-V material and the Group IV material such as Ge may be used as a channel material capable of forming a low-power, high-speed transistor. A high-performance CMOS may be formed by using a semiconductor substrate made of a Group III-V material, such as GaAs, having a higher electron mobility than the Si substrate, and a semiconductor substrate, such as Ge, having a higher degree of hole mobility than the Si substrate. In some embodiments, when forming an NMOS transistor on thesubstrate 102, thesubstrate 102 may be made of any of the above-described Group III-V materials. In some other embodiments, when forming a PMOS transistor on thesubstrate 102, at least a portion of thesubstrate 102 may be made of Ge. In another example, thesubstrate 102 may have a semiconductor on insulator (SOI) structure, such as silicon on insulator. Thesubstrate 102 may include a conductive region, for example, a well doped with an impurity, or a structure doped with an impurity. - The plurality of
sacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS may be made of different semiconductor materials. In some embodiments, the plurality of nanosheet semiconductor layers NS may be made of a single material. In some embodiments, the plurality of nanosheet semiconductor layers NS may be made of the same material as the material of thesubstrate 102. - In some embodiments, the plurality of
sacrificial semiconductor layers 106S may be made of SiGe, and the plurality of nanosheet semiconductor layers NS may be made of Si, but the present disclosure is not limited to these examples. - The plurality of
sacrificial semiconductor layers 106S may be formed to have the same thickness, but the technical idea of the present disclosure is not limited to this example. In some embodiments, the thickness of thesacrificial semiconductor layer 106S closest to thesubstrate 102 among the plurality ofsacrificial semiconductor layers 106S may be greater than the thickness of the remainingsacrificial semiconductor layer 106S. - Referring to
FIGS. 2A and 2B , a mask pattern MP is formed on the stacked structure of the plurality ofsacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS in each of the first region R1 and the second region R2. The mask pattern MP may be formed of a plurality of line patterns extending in parallel in one direction (X direction). - The mask pattern MP may include a pad
oxide film pattern 512 and ahard mask pattern 514. Thehard mask pattern 514 may be formed of silicon nitride, polysilicon, a spin-on hardmask (SOH) material, or a combination thereof, but the present disclosure is not limited to this example. In some embodiments, the SOH material may be formed of a hydrocarbon compound or a derivative thereof having a relatively high carbon content of about 85 wt % to about 99 wt % carbon based on the total weight of the SOH material. - Referring to
FIGS. 3A and 3B , a stacked structure SS of a plurality ofsacrificial semiconductor layers 106S and a plurality of nanosheet semiconductor layers NS is formed by using a mask pattern MP as an etching mask, and a plurality of trenches TR is formed by etching a part of thesubstrate 102. As a result, a plurality of fin-type active areas FA defined by a plurality of trenches TR may be formed in each of the first region R1 and the second region R2. - After a plurality of fin-type active areas FA are formed, a stacked structure SS of the plurality of
sacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS remains on the plurality of fin-type active areas FA. - Referring to
FIGS. 4A and 4B together, adevice isolation film 114 is formed within a plurality of trenches TR. Thedevice isolation film 114 may include aninsulating liner 114A that conformally covers an inner wall of a plurality of trenches TR. For example, theinsulating liner 114A may conformally cover a bottom surface of the trench TR, sidewalls of the fin-type active areas FA, sidewalls of the stacked structure SS of the plurality ofsacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS, and sidewalls of the mask pattern MP. A gap fill insulatingfilm 114B may be formed on theinsulating liner 114A and fill the plurality of trenches TR. - The
device isolation film 114 may be formed to cover the sidewall of the stacked structure SS and the sidewall of the mask pattern MP. - The
insulating liner 114A covering the inner walls of the plurality of trenches TR may include an oxide film, a nitride film, an oxynitride film, polysilicon, or a combination thereof. In some embodiments, theinsulating liner 114A may have a thickness of about 10-100 Å. - In some embodiments, the gap fill
insulating film 114B may be made of an oxide film. In some embodiments, the gap fill insulatingfilm 114B may include an oxide film formed by a deposition process or a coating process. In some embodiments, the gap fill insulatingfilm 114B may include an oxide film formed by a flowable chemical vapor deposition (FCVD) process or a spin coating process. - Referring to 5A and 5B together, a recess process of removing the mask pattern MP remaining on the stacked structure SS of the plurality of
sacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS and removing thedevice isolation film 114 from the upper portion by a certain thickness is performed. - The recess process may be performed such that the upper surface of the
device isolation film 114 is to be at a level approximately equal to or similar to theupper surface 104 of the fin-type active area FA. For example, after the recess process is performed, the upper surface of thedevice isolation film 114 may be at substantially the same level as theupper surface 104 of the fin-type active area FA. As a result, the sidewall of the stacked structure SS of the plurality ofsacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS on the plurality of fin-type active areas FA may be exposed. Items described as “substantially the same” or “substantially equal” may be exactly the same or equal, or may be the same or equal within acceptable variations that may occur, for example, due to manufacturing processes. - In order to perform the recess process, a dry etching, a wet etching, or a dry-and-wet combined etching process may be used.
- In some embodiments, after the mask pattern MP is removed and before performing the recess process of removing the
device isolation film 114 from the top thereof by a certain thickness, an ion implantation process for implanting the impurity ions for controlling the threshold voltage into the upper part of the plurality of fin-type active areas FA and the plurality of nanosheet semiconductor layers NS. In some embodiments, during the impurity ion implantation process for threshold voltage adjustment, phosphorus (P) or arsenic (As) ions may be implanted into the first region R1 as impurities, and boron (B) ions may be implanted into the second region R2 as impurities. - Referring to
FIG. 6 , a blockingfilm 120 is formed on the first region R1 to cover a part of the upper surface the sidewalls of the stacked structure SS of the plurality ofsacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS. The blockingfilm 120 may have an opening 120O exposing the remaining part of the upper surface of the stacked structure SS of the plurality ofsacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS. The blockingfilm 120 may cover a part of the upper surface of the uppermost nanosheet semiconductor layer NS among the plurality of nanosheet semiconductor layers NS while not covering the remaining part of the upper surface of the uppermost nanosheet semiconductor layer NS. For example, the blockingfilm 120 may be formed to cover opposite outside portions of the stacked structure SS of the plurality ofsacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS in the X direction, while leaving inside portions between the two opposing outside portions exposed. The blockingfilm 120 in the first region R1 may cover a part of the upper surface of the stacked structure SS and the upper surface of thedevice isolation film 114 together with the sidewall. - The blocking
film 120 may include, for example, nitride. In some other embodiments, the blockingfilm 120 may be formed of silicon nitride, polysilicon, or a combination thereof, but the present disclosure is not limited to this example. - The blocking
film 120 may be formed only in the first region R1 and may not be formed in the second region R2. - Referring to
FIG. 7 , at least one dummy gate structure (DGS) extending across at least a portion of the plurality of fin-type active areas FA are formed on the fin-type active area FA where the stacked structure SS of the plurality ofsacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS are formed, in each of the first region R1 and the second region R2. - The dummy gate structure (DGS) may have a structure in which an oxide film D152, a dummy gate layer D154, and a capping layer D156 are sequentially stacked. In one example for forming the dummy gate structure (DGS), the oxide film D152, the dummy gate layer D154, and the capping layer D156 may be sequentially formed to cover the exposed surface of the stacked structure SS of the plurality of
sacrificial semiconductor layers 106S covering the plurality of fin-type active areas FA and the plurality of nanosheet semiconductor layers NS, and the upper surface of thedevice isolation film 114. Then the oxide film D152, the dummy gate layer D154, and the capping layer D156 may be patterned, such that they are left only in certain portions. - In some embodiments, the dummy gate layer D154 may be made of polysilicon, and the capping layer D156 may be made of a silicon nitride film, but the present disclosure is not limited to this example.
- Thereafter, a
gate spacer 130 is formed to cover both sidewalls of the dummy gate structure DGS. In order to form thegate spacer 130, a spacer layer may be formed on thesubstrate 102 on which the dummy gate structure DGS is formed, and then the spacer layer may be etched back to leave thegate spacer 130. Thegate spacer 130 may include, for example, a silicon nitride film. - An edge dummy gate structure DGSS that is a part of the dummy gate structure DGS may be formed over the upper surface and sidewalls of the stacked structure SS. Specifically, the oxide film D152 of the edge dummy gate structure DGSS and the dummy gate layer D154 may be formed over the upper surface and sidewalls of the stacked structure SS.
- In the first region R1, the oxide film D152 and the dummy gate layer D154 of the edge dummy gate structure DGSS may be overlapped with the blocking
film 120 in the vertical direction (Z direction). In the first region R1, the blockingfilm 120 is between the oxide film D152 of the edge dummy gate structure DGSS and the upper surface and sidewalls of the stacked structure SS so that the edge dummy gate structure DGSS and the stacked structure SS may be spaced apart from each other with the blockingfilm 120 therebetween. - Since the blocking
film 120 is not formed in the second region R2, the oxide film D152 and the stacked structure SS of the edge dummy gate structure DGSS may contact each other. The term “contact,” as used herein, refers to a direct connection (i.e., touching) unless the context indicates otherwise. - Referring to 7 and 8, a plurality of nanosheet stacked structures NSS including a plurality of nanosheets N1, N2, and N3 are formed from the plurality of nanosheet semiconductor layers NS by removing a part of the stacked structure SS of the plurality of
sacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS by using the dummy gate structure DGS and thegate spacer 130 as an etching mask, and a plurality ofsacrificial semiconductor patterns 106 are formed from the plurality of sacrificial semiconductor layers 106S. - After the plurality of nanosheet stacked structures NSS are formed, the fin-type active area FA may be exposed between the plurality of respective nanosheet stacked structures NSS. In some embodiments, in the process of etching the stacked structure SS of the plurality of
sacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS, a part of an upper portion of the fin-type active area FA may be removed together. For example, the part of the upper portion of the fin-type active area FA may be removed, thereby forming a recess portion in the upper surface of the of the fin-type active area FA. - It is illustrated that both sidewalls of the plurality of nanosheets N1, N2, and N3 and the plurality of
sacrificial semiconductor patterns 106, which are respectively included in the plurality of nanosheets NSS, are perpendicular to the main surface of thesubstrate 102, but the present disclosure is not limited to this example. - Referring to
FIG. 9 , arecess region 106R is formed between the plurality of respective nanosheets N1, N2, and N3 by removing a part of the plurality ofsacrificial semiconductor patterns 106 exposed on both sides of each of the plurality of nanosheet stacked structures NSS by using an isotropic etching process for the second region R2. While therecess region 106R is formed in the second region R2, therecess region 106R may not be formed in the first region R1 because the first region R1 is covered by a mask layer (not shown). - Both sidewalls of the plurality of
sacrificial semiconductor patterns 106 exposed in therecess region 106R are shown as being perpendicular to the main surface of thesubstrate 102, but the present disclosure is not limited to this example. - In some embodiments, the isotropic etching process for forming the
recess region 106R may be performed by using a wet etch process which uses etch selectivity differences between the plurality ofsacrificial semiconductor patterns 106 and the plurality of nanosheets N1, N2, and N3. - The width of the plurality of
sacrificial semiconductor patterns 106 in the horizontal direction in which therecess region 106R is formed and remained in the second region R2 may be similar to the width of the dummy gate layer D154 in the horizontal direction. For example, the width in the horizontal direction of therecess region 106R may be substantially the same as the width in the horizontal direction of the lower portion of thegate spacer 130. In some embodiments, the width of the plurality ofsacrificial semiconductor patterns 106 in the horizontal direction in which therecess region 106R is formed and remained in the second region R2 may be greater than the width of the dummy gate layer D154 in the horizontal direction. For example, the width in the horizontal direction of therecess region 106R may be less than the width in the horizontal direction of the lower portion of thegate spacer 130. In some other embodiments, the width of the plurality ofsacrificial semiconductor patterns 106 in the horizontal direction in which therecess region 106R is formed and remained in the second region R2 may be less than the width of the dummy gate layer D154 in the horizontal direction. For example, the width in the horizontal direction of therecess region 106R may be greater than the width in the horizontal direction of the lower portion of thegate spacer 130. - Referring to
FIGS. 9 and 10 , an insulatingspacer 140 is formed in the second region R2 to fill therecess region 106R formed between the plurality of respective nanosheets N1, N2, and N3. In some embodiments, the insulatingspacer 140 may include a silicon nitride film. In some embodiments, the insulatingspacer 140 may be formed by stacking a plurality of insulating layers. - In some embodiments, the width of the insulating
spacer 140 in the horizontal direction may be substantially similar to the width of the lower portion of thegate spacer 130 in the horizontal direction. In other embodiments, the width of the insulatingspacer 140 in the horizontal direction may be less than or greater than the width of the lower portion of thegate spacer 130 in the horizontal direction. - It is illustrated that at least one sidewall of the insulating
spacer 140 is perpendicular to the main surface of thesubstrate 102, but the present disclosure is not limited to this example. - Referring to
FIG. 11 , the sidewalls of the plurality of nanosheets N1, N2 and N3 and the surface of the fin-type active area FA exposed between the respective nanosheet stacked structures NSS are exposed to a cleaning atmosphere to thereby remove a native oxide film from the exposed surfaces. - Thereafter, in the first region R1, a first source/
drain region 162 is formed by allowing a semiconductor material to be epitaxially grown from both exposed sidewalls of the plurality of nanosheets N1, N2, and N3 and the exposed surface of the fin-type active area FA. In the second region R2, a second source/drain region 164 is formed by allowing a semiconductor material to be epitaxially grown from both exposed sidewalls of the plurality of nanosheets N1, N2, and N3 and the exposed surface of the fin-type active area FA. - A mask layer (not shown) covering the second region R2 may be formed while the first source/
drain region 162 is formed in the first region R1, and the mask layer (not shown) covering the first region R1 may be formed while the second source/drain region 164 is formed in the second region R2. - The first source/
drain region 162 may include afirst cover layer 162A and a first buriedlayer 162B. Thefirst cover layer 162A may be formed in the first region R1 in order to cover exposed sidewalls of the plurality of nanosheets N1, N2, and N3, sidewalls of the plurality ofsacrificial semiconductor patterns 106, and the exposed surface of the fin-type active area FA, and the first buriedlayer 162B may be formed on thefirst cover layer 162A in the first region R1 to fill a space between the plurality of nanosheet stacked structures NSS. The upper surface of thefirst cover layer 162A may be at the same vertical height as the upper surface of the first buriedlayer 162B - The first source/
drain region 162 may include Ge. Thefirst cover layer 162A may be made of a semiconductor material including Si, and the first buriedlayer 162B may be made of a semiconductor material including Ge. In some embodiments, thefirst cover layer 162A may be made of a semiconductor material that does not include Ge. For example, thefirst cover layer 162A may be made of a semiconductor material such as Si. The first buriedlayer 162B may be made of a compound semiconductor material such as SiGe containing Ge or a semiconductor material such as Ge rather than thefirst cover layer 162A. In some embodiments, the first buriedlayer 162B may have a multi-layer structure of a semiconductor material including Ge and a semiconductor material including Si which covers thefirst cover layer 162A. - In some embodiments, at least a portion of the first source/
drain region 162 may include boron (B) ions as impurities. - The second source/
drain region 164 may include asecond cover layer 164A and a second buriedlayer 164B. Thesecond cover layer 164A may be formed to cover the exposed sidewalls of the plurality of nanosheets N1, N2, and N3 in the second region R2, and the second buriedlayer 164B may be formed on thesecond cover layer 164A in the second region R2 to fill a space between the plurality of nanosheet stacked structures NSS. Eachsecond cover layer 164A may have the same height in the Z direction as the adjacent nanosheets N1, N2, and N3, and may have a rounded shape in the X direction. - The second source/
drain region 164 may include Si. The second source/drain region 164 may not include Ge, unlike the first source/drain region 162. Thesecond cover layer 164A may be made of a semiconductor material including Si, and the second buriedlayer 164B may be made of a semiconductor material such as Si or a compound semiconductor material such as SiC. - In some embodiments, at least a portion of the second source/
drain regions 164 may include phosphorus (P) or arsenic (As) ions as impurities. - Referring to
FIG. 12 , aprotective film 138 is formed to cover a resultant structure ofFIG. 11 in which the first source/drain region 162 and the second source/drain region 164 are formed. For example, theprotective film 138 may be formed to conformally cover thegate spacers 130 and upper surfaces of the first source/drain region 162 and the second source/drain region 164. In some embodiments, theprotective film 138 may include a silicon nitride layer. In order to form theprotective film 138, an ALD or CVD process may be used. In some embodiments, theprotective film 138 may be omitted. - In some embodiments, the portion of the
protective film 138 of each of the first region R1 and the second region R2 may be separately formed. For example, after forming the first source/drain region 162, the portion of theprotective film 138 in the first region R1 may be formed, then the second source/drain region 164 may be formed, and then the portion of theprotective film 138 in the second region R2 may be formed. Alternatively, for example, after forming the second source/drain region 164, the portion of theprotective film 138 in the second region R2 may be formed, then the first source/drain region 162 may be formed, and then the portion of theprotective film 138 in the first region R1 may be formed. - After forming an inter-gate
insulating film 172 on theprotective film 138, the inter-gateinsulating film 172 is planarized to remove the capping layer D156 (seeFIG. 11 ) covering the upper surface of the dummy gate layer D154. Thegate spacer 130, theprotective film 138, and the inter-gateinsulating film 172 are then polished to remove a part of the thickness thereof from the upper portion thereof so that the upper surface of the inter-gateinsulating film 172 is set to be approximately at the same level as the upper surface of the dummy gate layer D154. For example, upper surfaces of thegate spacer 130, theprotective film 138, dummy gate layer D154, and the inter-gateinsulating film 172 may be at the same vertical level. In some embodiments, the inter-gateinsulating film 172 may include a silicon oxide film. - Referring to
FIGS. 12 and 13 together, a plurality of gate spaces GS are formed by removing the dummy gate layer D154 exposed through the inter-gateinsulating film 172 and the oxide film D152 thereunder. - An edge gate space GSS, which is a part of the gate spaces GS, may be formed by removing the dummy gate layer D154 of the edge dummy gate structure (DGSS of
FIG. 11 ) and the oxide film D152 thereunder. Herein, those gate space GS at locations corresponding to the edge dummy gate structures DGSS are referred to as an edge gate space GSS. - A blocking
film 120 is disposed on the bottom surface of the edge gate spaces GSS in the first region R1 so that the surfaces of the plurality of nanosheets N1 and N2 included in the nanosheet stacked structure NSS in the edge gate spaces GSS and the surfaces of the plurality ofsacrificial semiconductor patterns 106 may not be exposed. For example, the surfaces of the plurality of nanosheets N1, N2, and N3 and the surfaces of the plurality ofsacrificial semiconductor patterns 106 are covered by the blockingfilm 120 in the edge gate spaces GSS in the first region R1 so that only thegate spacer 130 and the blockingfilm 120 may be exposed in the edge gate spaces GSS. - Since the blocking
film 120 is not disposed in the second region R2, the surfaces of the plurality of nanosheets N1, N2, N3 and the surfaces of the plurality ofsacrificial semiconductor patterns 106 may be exposed in the edge gate space GSS in the second region R2. - In the first region R1, the uppermost nanosheet N3 of the nanosheet stacked structure NSS may be exposed through the rest of the plurality of gate spaces GS except for the edge gate spaces GSS. In the second region R2, the uppermost nanosheet N3 of the nanosheet stacked structure NSS may be exposed through the rest of the plurality of gate spaces GS, including the edge gate spaces GSS.
- Referring to 13 and 14 together, a part of the plurality of
sacrificial semiconductor patterns 106 remaining on the fin-type active area FA is removed through a part of the plurality of gate spaces GS, to thereby expose a part of the surface of each of the plurality of nanosheets N1, N2, and N3, and a part of theupper surface 104 of the fin-type active area FA through the gate spaces GS. Hence, the gate spaces GS may be extended to a portion where the plurality ofsacrificial semiconductor patterns 106 are partially removed. - Since the plurality of
sacrificial semiconductor patterns 106 are not exposed through the edge gate space GSS covered with the blockingfilm 120 in the first region R1, the plurality ofsacrificial semiconductor patterns 106 at the lower side of the edge gate space GSS are not removed but remain, and the plurality ofsacrificial semiconductor patterns 106 at the lower side of the remaining portion of the plurality of gate spaces GS except for the edge gate spaces GSS are removed so that a part of the surface of each of the plurality of nanosheets N1, N2, and N3 and a part of anupper surface 104 of the fin-type active area FA may be exposed through the gate spaces GS. Therefore, in the first region R1, the rest of the plurality of gate spaces GS except for the edge gate spaces GSS may be extended to a portion where a part of the plurality ofsacrificial semiconductor patterns 106 is removed. - The
sacrificial semiconductor pattern 106 covered with the blockingfilm 120, which remains by not being removed, may be referred to as a residual semiconductor pattern. - Since there is no blocking
film 120 in the second region R2, thesacrificial semiconductor pattern 106 in the lower side of all the gate spaces GS including the edge gate space GSS is removed so that a part of each of the plurality of nanosheets N1, N2, and N3 and a part of theupper surface 104 of the fin-type active area FA may be exposed through the gate space GS. Thus, in the second region R2, the plurality of gate spaces GS may be extended to the portion where a part of the plurality ofsacrificial semiconductor patterns 106 is removed. The plurality of insulatingspacers 140 may remain on either side of the second source/drain regions 164. - When there is no blocking
film 120, in the process of removing the plurality ofsacrificial semiconductor patterns 106 in the first region R1, the etchant supplied through the edge gate space GSS, among the plurality of gate spaces GS, is supplied in three directions (Y direction, -Y direction, and one of X direction and -X direction) toward the plurality ofsacrificial semiconductor patterns 106, and the etchant supplied through the rest of the plurality of gate spaces GS may be supplied towards the plurality ofsacrificial semiconductor patterns 106 in two directions (Y direction and -Y direction). Hence, as thesacrificial semiconductor pattern 106 at a lower side of the edge gate space GSS of the plurality of gate spaces GS is removed earlier than thesacrificial semiconductor pattern 106 at the remaining part of the lower side of the plurality of gate spaces GS, a portion of one side of the first source/drain region 162 facing the edge gate space GSS may be further removed, which is damage. In this case, since the portion of the gate dielectric layer (e.g.,gate dielectric layer 145 inFIG. 15 ) that is in contact with the damaged portion on one side of the first source/drain region 162 may become fragile, a short circuit may occur between the first source/drain region 162 and the gate electrode (e.g.,gate electrode 150 ofFIG. 15 ). - However, since the etchant is not supplied to the
sacrificial semiconductor pattern 106 at the lower side of the edge gate space GSS due to theblocking film 120 and remains as the residual semiconductor pattern, damage to the first source/drain region 162 may be prevented, thereby preventing a short circuit between the first source/drain region 162 and thegate electrode 150. - On the other hand, since the etchant for removing the
sacrificial semiconductor pattern 106 is not supplied to the second source/drain region 164 due to the insulatingspacer 140 in the second region R2, the second source/drain region 164 may not be damaged even when the blockingfilm 120 is not disposed. - Referring to 14 and 15 together, after removing the native oxide film from the exposed surfaces of the plurality of nanosheets N1, N2, and N3 and the fin-type active area FA, the
gate dielectric layer 145 is formed on the surfaces exposed in the plurality of gate spaces GS, and a plurality ofgate electrodes 150 are formed on thegate dielectric layer 145, which fills the plurality of gate spaces GS. - The
gate dielectric layer 145 may have a stacked structure of an interfacial layer and a high-k dielectric layer. The interfacial layer may heal an interface defect with the high-k dielectric layer on the upper surface of the fin-type active area FA and the surfaces of the plurality of nanosheets N1, N2, and N3. In some embodiments, the interfacial layer may include a low dielectric material layer having a dielectric constant of about 9 or less, such as a silicon oxide film, a silicon oxynitride film, or a combination thereof. In some other embodiments, the interfacial layer may include silicate, a combination of silicate and a silicon oxide film, or a combination of a silicate and a silicon oxynitride film. In some embodiments, the interfacial layer may be omitted. The high-k dielectric layer may be made of a material having a dielectric constant greater than that of the silicon oxide film. For example, the high-k dielectric layer may have a dielectric constant of about 10 to 25. The high-k dielectric layer may be formed by atomic layer deposition (ALD), chemical vapor deposition (CVD), or physical vapor deposition (PVD). The high-k dielectric layer may have a thickness of about 10 to 40 Å, but the present disclosure is not limited to this example. - The
gate electrode 150 may include a metal-containing layer for controlling the work function and a metal-containing layer for filling the upper space of the metal-containing layer for controlling the work function. In some embodiments, thegate electrode 150 may have a structure in which a metal nitride layer, a metal layer, a conductive capping layer, and a gap-fill metal layer are sequentially stacked. The metal nitride layer and the metal layer may be formed by ALD, metal organic ALD (MOALD), or metal organic CVD (MOCVD) process, respectively. The conductive capping layer may serve as a protective film for preventing the surface of the metal layer from being oxidized. In addition, the conductive capping layer may serve as a wetting layer for facilitating deposition when another conductive layer is deposited on the metal layer. The gap-fill metal layer may extend over the conductive capping layer. The gap fill metal layer may be formed by an ALD, CVD, or PVD process. In some embodiments, thegate electrode 150 may have a stacked structure of TiAlC/TiN/W, a stacked structure of TiN/TaN/TiAlC/TiN/W, or a stacked structure of TiN/TaN/TiN/TiAlC/TiN/W. In the above stacked structures, a TiAlC layer or a TiN layer may serve as a metal-containing layer for controlling a work function. - In some embodiments, the portion of the
gate electrode 150 formed in each of the first region R1 and the second region R2 may have a different stacking structure. For example, in the portion of thegate electrode 150 formed in each of the first region R1 and the second region R2, the metal for controlling the work function may be made of another material. - The
gate electrode 150 may include amain gate portion 150M covering the upper surface of the nanosheet stacked structure NS S including the plurality of nanosheets N1, N2, and N3, and a plurality ofsub-gate portions 150S formed in a space between each of the nanosheets N1, N2, and N3 and the fin-type active area FA. The horizontal length of each of the plurality ofsub-gate portions 150S may have the same value as the horizontal length of themain gate portion 150M. In some embodiments, the horizontal length of each of the plurality ofsub-gate portions 150S may be greater or less than the horizontal length of themain gate portion 150M. Thegate dielectric layer 145 may surround the plurality ofsub-gate portions 150S, respectively, and thegate dielectric layer 145 may cover bottom and side surfaces of themain gate portion 150M. - The plurality of
gate electrodes 150 may include adummy gate electrode 150D filling the edge gate space GSS of the plurality of gate spaces GS, and areal gate electrode 150R filling a remaining portion of the plurality of gate spaces GS except for the edge gate space GSS. In some embodiments, dummy gate electrodes in memory devices are not effective to cause transmission of data to external devices. For instance, a dummy gate electrode may not be electrically connected to gates of memory cells, or if a dummy gate electrode is electrically connected to gates of dummy memory cells, such dummy gate electrode may not be activated or if activated, may not result in communication of any data in such dummy memory cells to a source external to the memory device. - In the first region R1, the plurality of
sub-gate portions 150S are formed in the portion where the plurality ofsacrificial semiconductor patterns 106 are removed so that thedummy gate electrode 150D includes only themain gate portion 150M and may not include the plurality ofsub-gate portions 150S. - On the other hand, in the second region R2, the
dummy gate electrode 150D may include themain gate portion 150M and the plurality ofsub-gate portions 150S. - In the second region R2, a plurality of insulating
spacers 140 may be disposed on both ends of each of the plurality ofsub-gate portions 150S of thereal gate electrode 150R with agate dielectric layer 145 therebetween. Thus, the insulatingspacers 140 may cover both sidewalls of each of the plurality ofsub-gate portions 150S with thegate dielectric layer 145 therebetween. - In some embodiments, in the second region R2, the plurality of insulating
spacers 140 may be disposed on one end of each of the plurality ofsub-gate portions 150S of thedummy gate electrode 150D with thegate dielectric layer 145 therebetween. Thus, the insulatingspacers 140 may cover one sidewall of each of the plurality ofsub-gate portions 150S of thedummy gate electrode 150D, specifically, one sidewall nearest thereal gate electrode 150R with thegate dielectric layer 145 therebetween. - In the first region R1, the insulating
spacers 140 may not be disposed on both ends of each of the plurality ofsub-gate portions 150S of thereal gate electrode 150R. - Referring to
FIG. 16 , after forming an inter-layerinsulating film 174 covering thegate electrode 150 and the inter-gateinsulating film 172, the inter-layerinsulating film 174 and the inter-gateinsulating film 172 are partially etched to form a plurality ofcontact holes 190H which expose the first source/drain region 162 and the plurality of second source/drain regions 164 in the first region R1 and the second region R2, respectively. Thereafter, a firstmetal silicide film 166 and a secondmetal silicide film 168 are formed on the upper surfaces of the plurality of first source/drain regions 162 and the upper surfaces of the plurality of second source/drain regions 164 which are exposed through the plurality ofcontact holes 190H. In some embodiments, the firstmetal silicide film 166 and the secondmetal silicide film 168 may be made of titanium silicide, but the present disclosure is not limited to this example. - Thereafter, a plurality of contact plugs 190, which fill the plurality of
contact holes 190H, are formed to form asemiconductor device 1. The contact plugs 190 in the first region R1 may be connected to the first source/drain region 162 through the firstmetal silicide film 166, and the contact plugs 190 in the second region R2 may be connected to the second source/drain region 164 through the secondmetal silicide film 168. The firstmetal silicide film 166 and the secondmetal silicide film 168 may cover lower side and bottom surfaces of the contact plugs 190. - The
semiconductor device 1 includes a fin-type active area FA protruding from thesubstrate 102 and extending lengthwise in a first direction (X direction), and a plurality of nanosheet stacking structures NSS facing theupper surface 104 of the fin-type active area FA at a position spaced above theupper surface 104 of the fin-type active area FA. A trench TR limiting the fin-type active area FA may be formed in thesubstrate 102. As used herein, an item, layer, or portion of an item or layer described as extending “lengthwise” in a particular direction has a length in the particular direction and a width perpendicular to that direction, where the length is greater than the width. - The bottom sidewalls of the fin-type active area FA may be covered with the
device isolation film 114 filling the trench TR, respectively. Thedevice isolation film 114 may include an insulatingliner 114A that conformally covers the inner wall of the trench TR, and a gapfill insulating film 114B on the insulatingliner 114A and filling the trench TR. The level of theupper surface 104 of the fin-type active area FA and the level of the upper surface of thedevice isolation film 114 may be the same or similar to each other. For example, the level of theupper surface 104 of the fin-type active area FA and the level of the upper surface of thedevice isolation film 114 may be substantially the same. - The plurality of nanosheets stacked structures NSS are spaced in the Z direction from the
upper surface 104 of the fin-type active area FA. The plurality of nanosheet stack structures NSS may include a plurality of nanosheets N1, N2, and N3 extending on thesubstrate 102 in parallel in the X and Y directions with the upper surface of the fin-type active area FA. - The plurality of nanosheets N1, N2, and N3 constituting one nanosheet stacked structure NSS is sequentially stacked on the
upper surface 104 of the fin-type active area FA one by one. It is illustrated in the present example that one nanosheet stacked structure NSS includes three nanosheets N1, N2, and N3, but the technical idea of the present disclosure is not limited to the illustrated example. For example, each of the plurality of nanosheets N1, N2, and N3 may include one nanosheet, or may include a plurality of nanosheets that are variously selected as needed. Each of the plurality of nanosheets N1, N2, and N3 may have a channel region. - In the first region R1, the blocking
film 120 may cover a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS. In the first region R1, a plurality ofsacrificial semiconductor patterns 106, namely, a plurality of residual semiconductor patterns, may be disposed between the fin-type active area FA and each of the plurality of nanosheets N1, N2, and N3 included in a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS. - A plurality of
gate electrodes 150 extend lengthwise in a second direction (Y direction) intersecting the first direction on the fin-type active area FA. The plurality ofgate electrodes 150 may overlap with at least a part of each of the plurality of nanosheet stack structures NSS in the vertical direction (Z direction). - The
real gate electrode 150R in the first region R1, and each of thereal gate electrode 150R and thedummy gate electrode 150D in the second region R2 among the plurality ofgate electrodes 150 may be formed to surround at least a part of the plurality of nanosheets N1, N2, and N3 while covering the nanosheet stacked structure NSS. Thegate electrode 150 may include amain gate portion 150M covering the upper surface of the nanosheet stacked structure NSS and a plurality ofsub-gate portions 150S which are connected to themain gate portion 150M and are formed at a space between the fin-type active area FA and the plurality of nanosheets N1, N2, and N3, namely, at the lower side of each of the plurality of nanosheets N1, N2, and N3. The second thickness, which is the thickness of each of the plurality ofsub-gate portions 150S, may be less than the first thickness, which is the thickness of themain gate portion 150M. Here, the first thickness of themain gate portion 150M and the second thickness of each of the plurality ofsub-gate portions 150S refer to a size in the Z direction, respectively. - The length of each of the plurality of
sub-gate portions 150S may have the same value as the length of themain gate portion 150M. In some embodiments, the horizontal length of each of the plurality ofsub-gate portions 150S may be greater or less than the horizontal length of themain gate portion 150M. Here, the length of the plurality ofsub-gate portions 150S and the length of themain gate portion 150M each refers to a length in the X direction. - A
gate dielectric layer 145 is formed between the nanosheet stacked structure NSS and thegate electrode 150. - The
dummy gate electrode 150D of the first region R1 among the plurality ofgate electrodes 150 may include only themain gate portion 150M and may not include thesub-gate portion 150S. Thedummy gate electrode 150D in the first region R1 among the plurality ofgate electrodes 150 may be disposed on theblocking film 120. - The
dummy gate electrode 150D in the first region R1 may be spaced apart from the nanosheet stacked structure NSS and the plurality ofresidual semiconductor patterns 106 with the blockingfilm 120 and thegate dielectric layer 145 therebetween, and thegate dielectric layer 145 in contact with thedummy gate electrode 150D in the first region R1 may be spaced apart from the nanosheet stacked structure NSS and the plurality ofresidual semiconductor patterns 106 with the blockingfilm 120 therebetween. - The
real gate electrode 150R in the first region R1, and each of thereal gate electrodes 150R and thedummy gate electrode 150D in the second region R2 may be spaced apart from the nanosheet stacked structure NSS with thegate dielectric layer 145 therebetween, and thereal gate electrode 150R of the first region R1, and each of thereal gate electrodes 150R and thedummy gate electrode 150D in the second region R2 may be electrically connected to the plurality of nanosheets N1, N2, and N3 included in the nanosheet stacked structure NSS. As used herein, items described as being “electrically connected” are configured such that an electrical signal can be passed from one item to the other. - In some embodiments, the plurality of nanosheets N1, N2, and N3 may be made of a single material. In some embodiments, the plurality of nanosheets N1, N2, and N3 may be made of the same material as the constituent material of the
substrate 102. - A plurality of first source/
drain regions 162 and a plurality of second source/drain regions 164 are formed on the fin-type active area FA in the first region R1 and the second region R2, respectively. The plurality of first source/drain regions 162 and the plurality of second source/drain regions 164 are connected to one end of a plurality of neighboring nanosheets N1, N2, and N3, respectively. - The first source/
drain region 162 may include afirst cover layer 162A and a first buriedlayer 162B. Thefirst cover layer 162A may be formed in the first region R1 in order to cover sidewalls of the plurality of nanosheets N1, N2, and N3, sidewalls of the plurality of residual semiconductor patterns, a part of the fin-type active area FA, and a part of thegate dielectric layer 145, and the first buriedlayer 162B may be formed on thefirst cover layer 162A in the first region R1 to fill a space between the plurality of nanosheet stacked structures NSS. - The second source/
drain region 164 may include asecond cover layer 164A and a second buriedlayer 164B. Thesecond cover layer 164A may be formed to cover the exposed sidewalls of the plurality of nanosheets N1, N2, and N3 in the second region R2, and the second buriedlayer 164B may be formed on thesecond cover layer 164A in the second region R2 to fill a space between the plurality of nanosheet stacked structures NSS. - One first source/
drain region 162 may include afirst cover layer 162A that extends as one body on the sidewall of each of the plurality of nanosheets N1, N2, and N3, and one second source/drain region 164 may include a plurality of second cover layers 164A that are in contact with and spaced from the sidewall of each of the plurality of nanosheets N1, N2, and N3. - The
first cover layer 162A may be made of a material different from the residual semiconductor pattern. Thefirst cover layer 162A may be made of a semiconductor material including Ge, and the residual semiconductor pattern may be made of a semiconductor material including Ge. - A first
metal silicide film 166 and a secondmetal silicide film 168 may be formed on the plurality of first source/drain regions 162 and the plurality of second source/drain regions 164, respectively. In some embodiments, the firstmetal silicide film 166 and the secondmetal silicide film 168 may be omitted. - A
gate spacer 130 and aprotective film 138 are formed on the plurality of nanosheets stacked structures NSS in order to cover the sidewalls of thegate electrode 150 in order. Thegate spacer 130 and theprotective film 138 may include a silicon nitride layer, but the present disclosure is not limited this example. In some embodiments, theprotective film 138 may be omitted. - The
gate spacer 130 and theprotective film 138 may cover the sidewalls of themain gate portion 150M of thegate electrodes 150. In some embodiments, theprotective film 138 may cover a portion of the upper surface of the plurality of first source/drain regions 162 and the plurality of second source/drain regions 164. - An insulating
spacer 140 in contact with the second source/drain region 164 is formed in a space between the plurality of respective nanosheets N1, N2, and N3 in the second region R2. The insulatingspacer 140 may be between thesub-gate portion 150S and the second source/drain region 164 in the space between the fin-type active area FA and each of the plurality of nanosheets N1, N2, and N3. In some embodiments, the insulatingspacers 140 may include a silicon nitride film. The insulatingspacers 140 may cover at least a part of the plurality ofsub-gate portions 150S with thegate dielectric layer 145 therebetween. - An inter-gate
insulating film 172 and an inter-layerinsulating film 174 are sequentially formed on the plurality of first source/drain regions 162 and the plurality of second source/drain regions 164. The inter-gateinsulating film 172 and the inter-layerinsulating film 174 may include a silicon oxide film, but the present disclosure is not limited to this example. - The contact plugs 190 may be connected to the plurality of first source/
drain regions 162 and the plurality of second source/drain regions 164, respectively. The contact plugs 190 may penetrate the inter-layerinsulating film 174, the inter-gateinsulating film 172, and theprotective film 138, to thereby be connected to the plurality of first source/drain regions 162 and the plurality of second source/drain regions 164, respectively. The firstmetal silicide layer 166 may be between the first source/drain region 162 and thecontact plug 190. The secondmetal silicide film 168 may be between the second source/drain region 164 and thecontact plug 190. The contact plugs 190 may be formed of a metal, a conductive metal nitride, or a combination thereof. For example, thecontact plug 190 may be formed of W, Cu, Al, Ti, Ta, TiN, TaN, an alloy thereof, or a combination thereof, but the technical idea of the present disclosure is limited to the illustrated examples. - Since the
semiconductor device 1 according to the present disclosure has ablocking film 120, in the first region R1, for preventing the first source/drain region 162 from being damaged in the process of forming thegate electrode 150, particularly, thesub-gate portion 150S, a short circuit between the first source/drain region 162 and thegate electrode 150 may be prevented, and since thesemiconductor device 1 includes the insulatingspacer 140 in the second region, a short circuit between the second source/drain region 164 and thegate electrode 150 may be prevented, thereby ensuring reliability. -
FIGS. 17 to 23 are cross-sectional views illustrating a method of manufacturing a semiconductor device, according to embodiments of the present disclosure, and a semiconductor device manufactured by the method, according to a process order. Specifically,FIGS. 17 to 23 are cross-sectional views taken along the X-Z plane about the operations after the operations ofFIGS. 5A and 5B , and the points that have already been explained with reference toFIGS. 1 to 16 will be omitted in the description ofFIGS. 17 to 23 . - Referring to
FIG. 17 , a blockingfilm 120 is formed on each of the first region R1 and the second region R2 to cover a part of the upper surface of the stacked structure of the plurality ofsacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS and the sidewalls. The blockingfilm 120 may have an opening 120O exposing the remaining part of the upper surface of the stacked structure SS of the plurality ofsacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS. The opening 120O of the blockingfilm 120 may cover a part of the upper surface of the uppermost nanosheet semiconductor layer NS among the plurality of nanosheet semiconductor layers NS while not covering the remaining part of the upper surface of the uppermost nanosheet semiconductor layer NS. The blockingfilm 120 in each of the first region R1 and the second region R2 may cover a part of the upper surface of the stacked structure SS and the upper surface of thedevice isolation film 114 together with the sidewall. - Referring to
FIG. 18 , at least one dummy gate structure (DGS) extending lengthwise across at least a portion of the plurality of fin-type active areas FA are formed on the fin-type active area FA where the stacked structure of the plurality ofsacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS is formed, and agate spacer 130 covering both sidewalls of the dummy gate structure DGS is formed in each of the first region R1 and the second region R2. The dummy gate structure (DGS) may have a structure in which an oxide film D152, a dummy gate layer D154, and a capping layer D156 are sequentially stacked. - In each of the first region R1 and the second region R2, the oxide film D152 and the dummy gate layer D154 of the edge dummy gate structure DGSS may be overlapped with the blocking
film 120 in the vertical direction (Z direction). In each of the first region R1 and the second region R2, a blockingfilm 120 is between the oxide film D152 of the edge dummy gate structure DGSS and the upper surface and sidewalls of the stacked structure SS so that the edge dummy gate structure DGSS and the stacked structure may be spaced apart from each other with the blockingfilm 120 therebetween. - Referring to
FIGS. 18 and 19 , a plurality of nanosheet stacked structures NSS including a plurality of nanosheets N1, N2 and N3 are formed from the plurality of nanosheet semiconductor layers NS by removing a part of the stacked structure of the plurality ofsacrificial semiconductor layers 106S and the plurality of nanosheet semiconductor layers NS by using the dummy gate structure DGS and thegate spacer 130 as an etching mask, and a plurality ofsacrificial semiconductor patterns 106 are formed from the plurality of sacrificial semiconductor layers 106S. - Referring to
FIG. 20 ,recess regions 106R are formed between the plurality of respective nanosheets N1, N2, and N3 by removing a part of the plurality ofsacrificial semiconductor patterns 106 exposed on both sides of each of the plurality of nanosheet stacked structures NSS by using an isotropic etching process for the second region R2. - Referring to
FIGS. 20 and 21 , insulatingspacers 140 are formed in the second region R2 to fill therecess regions 106R formed between the plurality of respective nanosheets N1, N2, and N3. - Referring to
FIG. 22 , the sidewalls of the plurality of nanosheets N1, N2, and N3 and the surface of the fin-type active area FA exposed between the respective nanosheet stacked structures NSS are exposed to a cleaning atmosphere to thereby remove a native oxide film from the exposed surfaces. - Thereafter, in the first region R1, a first source/
drain region 162 is formed by allowing a semiconductor material to be epitaxially grown from both exposed sidewalls of the plurality of nanosheets N1, N2, and N3 and the exposed surface of the fin-type active area FA, and, in the second region R2, a second source/drain region 164 is formed by allowing a semiconductor material to be epitaxially grown from both exposed sidewalls of the plurality of nanosheets N1, N2, and N3 and the exposed surface of the fin-type active area FA. - The first source/
drain region 162 may include afirst cover layer 162A and a first buriedlayer 162B. Thefirst cover layer 162A may be formed in the first region R1 in order to cover exposed both sidewalls of the plurality of nanosheets N1, N2, and N3, both sidewalls of the plurality ofsacrificial semiconductor patterns 106, and the exposed surface of the fin-type active area FA, and the first buriedlayer 162B may be formed to fill a space between the plurality of nanosheet stacked structures NSS on thefirst cover layer 162A in the first region R1. - The second source/
drain region 164 may include asecond cover layer 164A and a second buriedlayer 164B. Thesecond cover layer 164A may be formed to cover the exposed both sidewalls of the plurality of nanosheets N1, N2, and N3 in the second region R2, and the second buriedlayer 164B may be formed to fill a space between the plurality of nanosheet stacked structures NSS on thesecond cover layer 164A in the second region R2. - Referring to
FIG. 23 , aprotective film 138, an inter-gateinsulating film 172, agate dielectric layer 145, agate electrode 150, an inter-layerinsulating film 174, a plurality ofcontact holes 190H, a firstmetal silicide film 166, a secondmetal silicide film 168, and a plurality of contact plugs 190 are formed as asemiconductor device 1 a. - The
real gate electrode 150R of the plurality ofgate electrodes 150 may include amain gate portion 150M and a plurality ofsub-gate portions 150S. - In each of the first region R1 and the second region R2, the
dummy gate electrode 150D includes only themain gate portion 150M and may not include the plurality ofsub-gate portions 150S. - In each of the first region R1 and the second region R2, the semiconductor device la may include a
blocking film 120 covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS. The blockingfilms 120 formed in the first region R1 and the second region R2 may be referred to as a first blocking film and a second blocking film, respectively. - In each of the first region R1 and the second region R2, a plurality of
residual semiconductor patterns 106 may be disposed between the fin-type active area FA and each of the plurality of nanosheets N1, N2, and N3 included in a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS. - An insulating
spacer 140 in contact with the second source/drain region 164 is formed in a space between the plurality of respective nanosheets N1, N2, and N3 in the second region R2. The insulatingspacer 140 may be between thesub-gate portion 150S and the second source/drain region 164 and between the residual semiconductor pattern and the second source/drain region 164, in the space between the plurality of respective nanosheets N1, N2, and N3. - Since the
semiconductor device 1 a according to the present disclosure includes ablocking film 120, in the first region R1 and the second region R2, for preventing the first source/drain region 162 and the second source/drain region 164 from being damaged in the process of forming a gate electrode, particularly asub-gate portion 150S, a short circuit between the first source/drain region 162 and thegate electrode 150 and/or between the second source/drain region 164 and thegate electrode 150 may be prevented, thereby ensuring reliability. -
FIGS. 24 to 27 are cross-sectional views illustrating a method of manufacturing a semiconductor device, according to embodiments of the present disclosure, and a semiconductor device manufactured by the method, according to a process order. Specifically,FIGS. 24 to 27 are cross-sectional views taken along the X-Z plane about operations after the operations ofFIG. 8 , and the points that have already been described with reference toFIGS. 1 to 16 will be omitted in the description ofFIGS. 24 to 27 . - Referring to
FIG. 24 , arecess region 106R is formed between the plurality of respective nanosheets N1, N2, and N3 by removing a part of the plurality ofsacrificial semiconductor patterns 106 exposed on both sides of each of the plurality of nanosheet stacked structures NSS by using an isotropic etching process for each of the first region R1 and the second region R2. - Referring to
FIGS. 24 and 25 together, the insulatingspacer 140 filling therecess region 106R formed between the plurality of respective nanosheets N1, N2, and N3 is formed in the first region R1 and the second region R2, respectively. - Referring to
FIG. 26 , the sidewalls of the plurality of nanosheets N1, N2, and N3 and the surface of the fin-type active area FA exposed between the respective nanosheet stacked structures NSS are exposed to a cleaning atmosphere to thereby remove a native oxide film from the exposed surfaces. - Thereafter, in the first region R1, a first source/
drain region 162 is formed by allowing a semiconductor material to be epitaxially grown from both exposed sidewalls of the plurality of nanosheets N1, N2, and N3 and the exposed surface of the fin-type active area FA, and, in the second region R2, a second source/drain region 164 is formed by allowing a semiconductor material to be epitaxially grown from both exposed sidewalls of the plurality of nanosheets N1, N2, and N3 and the exposed surface of the fin-type active area FA. - The first source/
drain region 162 may include afirst cover layer 162A and a first buriedlayer 162B. Thefirst cover layer 162A may be formed in the first region R1 in order to cover exposed both sidewalls of the plurality of nanosheets N1, N2, and N3, both sidewalls of the plurality ofsacrificial semiconductor patterns 106, and the exposed surface of the fin-type active area FA, and the first buriedlayer 162B may be formed on thefirst cover layer 162A in the first region R1 to fill a space between the plurality of nanosheet stacked structures NSS. - The second source/
drain region 164 may include asecond cover layer 164A and a second buriedlayer 164B. Thesecond cover layer 164A may be formed to cover the exposed both sidewalls of the plurality of nanosheets N1, N2, and N3 in the second region R2, and the second buriedlayer 164B may be formed on thesecond cover layer 164A in the second region R2 to fill a space between the plurality of nanosheet stacked structures NSS. - Referring to
FIG. 27 , aprotective film 138, an inter-gateinsulating film 172, agate dielectric layer 145, agate electrode 150, an inter-layerinsulating film 174, a plurality ofcontact holes 190H, a firstmetal silicide film 166, a secondmetal silicide film 168, and a plurality of contact plugs 190 are formed as asemiconductor device 1 b. - In the first region R1, the
semiconductor device 1 b may include ablocking film 120 covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS. - The
semiconductor device 1 b may include insulatingspacers 140 in contact with the first source/drain region 162 and the second source/drain region 164 in a space between the plurality of respective nanosheets N1, N2, and N3 in each of the first region R1 and the second region R2. The insulatingspacer 140 may be between thesub-gate portion 150S and the first source/drain region 162 in a space between the plurality of nanosheets N1, N2, and N3 in the first region, or may be between thesub-gate portion 150S and the second source/drain region 164 in a space between the plurality of respective nanosheets N1, N2, and N3 in the second region R2. - Since the
semiconductor device 1 b according to the present disclosure includes ablocking film 120 for preventing the first source/drain region 162 from being damaged in the process of forming thegate electrode 150, particularly, thesub-gate portion 150S and includes insulatingspacers 140 in the first region R1 and the second region R2, a short circuit between the first source/drain region 162 and thegate electrode 150 and/or between the second source/drain region 164 and thegate electrode 150 may be prevented, thereby ensuring reliability. -
FIG. 28 is a cross-sectional view illustrating a semiconductor device manufactured by a method of manufacturing a semiconductor device, according to embodiments of the present disclosure. Specifically,FIG. 28 is a cross-sectional view taken along the X-Z plane. The points that have already been described with reference toFIGS. 1 to 27 may be omitted in the description ofFIG. 28 . - Referring to
FIG. 28 , in each of the first region R1 and the second region R2, thesemiconductor device 1 c may include ablocking film 120 covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS. In each of the first region R1 and the second region R2, a plurality ofresidual semiconductor patterns 106 may be disposed between the fin-type active area FA and each of the plurality of nanosheets N1, N2, and N3 included in a pair of nanosheet stacked structures NSS adjacent to both sides of the fin-type active area FA among the plurality of nanosheet stacked structures NSS. - The
semiconductor device 1 c may include insulatingspacers 140 in contact with the first source/drain region 162 and the second source/drain region 164 in a space between the plurality of respective nanosheets N1, N2, and N3 in each of the first region R1 and the second region R2. The insulatingspacer 140 may be between thesub-gate portion 150S and the first source/drain region 162 and between the residual semiconductor pattern and the first source/drain region 162, respectively, in the space between the plurality of respective nanosheets N1, N2, and N3, in the first region, and may be between thesub-gate portion 150S and the second source/drain region 164 and between the residual semiconductor pattern and the second source/drain region 164, respectively, in the space between the plurality of respective nanosheets N1, N2, and N3, in the second region. - In the second region R2, the insulating
spacers 140 may cover one sidewall of each of the plurality ofsub-gate portions 150S of thedummy gate electrode 150D, specifically, one sidewall toward thereal gate electrode 150R with thegate dielectric layer 145 therebetween. - Since the
semiconductor device 1 c according to the present disclosure includes ablocking film 120 and insulatingspacers 140 for preventing the first source/drain region 162 from being damaged in the process of forming thegate electrode 150, particularly, thesub-gate portion 150S, a short circuit between the first source/drain region 162 and thegate electrode 150 and/or between the second source/drain region 164 and thegate electrode 150 may be prevented, thereby ensuring reliability. - While the inventive concept has been particularly shown and described with reference to embodiments thereof, it will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the following claims.
Claims (20)
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Also Published As
Publication number | Publication date |
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US10566331B1 (en) | 2020-02-18 |
CN110828570A (en) | 2020-02-21 |
CN110828570B (en) | 2023-08-22 |
KR20200017281A (en) | 2020-02-18 |
KR102473659B1 (en) | 2022-12-02 |
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