US20190330753A1 - Nickel (alloy) electroplating solution - Google Patents
Nickel (alloy) electroplating solution Download PDFInfo
- Publication number
- US20190330753A1 US20190330753A1 US16/349,740 US201716349740A US2019330753A1 US 20190330753 A1 US20190330753 A1 US 20190330753A1 US 201716349740 A US201716349740 A US 201716349740A US 2019330753 A1 US2019330753 A1 US 2019330753A1
- Authority
- US
- United States
- Prior art keywords
- nickel
- pyridinium
- electroplating solution
- sulfonate
- minute
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 292
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 144
- 238000009713 electroplating Methods 0.000 title claims abstract description 126
- 229910045601 alloy Inorganic materials 0.000 title abstract description 36
- 239000000956 alloy Substances 0.000 title abstract description 36
- 238000007747 plating Methods 0.000 claims abstract description 72
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 claims abstract description 37
- -1 N-substituted pyridinium compound Chemical class 0.000 claims abstract description 32
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 claims description 78
- 239000000463 material Substances 0.000 claims description 31
- 229920002554 vinyl polymer Polymers 0.000 claims description 20
- 150000004820 halides Chemical class 0.000 claims description 15
- 230000000149 penetrating effect Effects 0.000 claims description 14
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 13
- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 150000002815 nickel Chemical class 0.000 claims description 9
- 239000006174 pH buffer Substances 0.000 claims description 9
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- CRTKBIFIDSNKCN-UHFFFAOYSA-N 1-propylpyridin-1-ium Chemical compound CCC[N+]1=CC=CC=C1 CRTKBIFIDSNKCN-UHFFFAOYSA-N 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 5
- 239000011800 void material Substances 0.000 claims description 5
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 claims description 4
- 125000003282 alkyl amino group Chemical group 0.000 claims description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004327 boric acid Substances 0.000 claims description 4
- 125000004966 cyanoalkyl group Chemical group 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 4
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 4
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- FZENGILVLUJGJX-NSCUHMNNSA-N (E)-acetaldehyde oxime Chemical group C\C=N\O FZENGILVLUJGJX-NSCUHMNNSA-N 0.000 claims description 3
- PBIZDZQRODMMPZ-UHFFFAOYSA-N 2-pyridin-1-ium-1-ylacetonitrile Chemical compound N#CC[N+]1=CC=CC=C1 PBIZDZQRODMMPZ-UHFFFAOYSA-N 0.000 claims description 3
- RVOLLAQWKVFTGE-UHFFFAOYSA-N Pyridostigmine Chemical compound CN(C)C(=O)OC1=CC=C[N+](C)=C1 RVOLLAQWKVFTGE-UHFFFAOYSA-N 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims description 3
- 150000001450 anions Chemical class 0.000 claims description 3
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 3
- 125000001160 methoxycarbonyl group Chemical group [H]C([H])([H])OC(*)=O 0.000 claims description 3
- LFAIHVPBSXATTE-UHFFFAOYSA-N (1-ethylpyridin-1-ium-3-yl)methanol Chemical compound CC[N+]1=CC=CC(CO)=C1 LFAIHVPBSXATTE-UHFFFAOYSA-N 0.000 claims description 2
- DADKKHHMGSWSPH-UHFFFAOYSA-N 1-butyl-3-methylpyridin-1-ium Chemical compound CCCC[N+]1=CC=CC(C)=C1 DADKKHHMGSWSPH-UHFFFAOYSA-N 0.000 claims description 2
- NNLHWTTWXYBJBQ-UHFFFAOYSA-N 1-butyl-4-methylpyridin-1-ium Chemical compound CCCC[N+]1=CC=C(C)C=C1 NNLHWTTWXYBJBQ-UHFFFAOYSA-N 0.000 claims description 2
- REACWASHYHDPSQ-UHFFFAOYSA-N 1-butylpyridin-1-ium Chemical compound CCCC[N+]1=CC=CC=C1 REACWASHYHDPSQ-UHFFFAOYSA-N 0.000 claims description 2
- OIDIRWZVUWCCCO-UHFFFAOYSA-N 1-ethylpyridin-1-ium Chemical compound CC[N+]1=CC=CC=C1 OIDIRWZVUWCCCO-UHFFFAOYSA-N 0.000 claims description 2
- AMKUSFIBHAUBIJ-UHFFFAOYSA-N 1-hexylpyridin-1-ium Chemical compound CCCCCC[N+]1=CC=CC=C1 AMKUSFIBHAUBIJ-UHFFFAOYSA-N 0.000 claims description 2
- LDHMAVIPBRSVRG-UHFFFAOYSA-O 1-methylnicotinamide Chemical compound C[N+]1=CC=CC(C(N)=O)=C1 LDHMAVIPBRSVRG-UHFFFAOYSA-O 0.000 claims description 2
- HOZSKYZXBJWURK-UHFFFAOYSA-N 1-pentylpyridin-1-ium Chemical compound CCCCC[N+]1=CC=CC=C1 HOZSKYZXBJWURK-UHFFFAOYSA-N 0.000 claims description 2
- UPPLJLAHMKABPR-UHFFFAOYSA-H 2-hydroxypropane-1,2,3-tricarboxylate;nickel(2+) Chemical compound [Ni+2].[Ni+2].[Ni+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O UPPLJLAHMKABPR-UHFFFAOYSA-H 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- PQBAWAQIRZIWIV-UHFFFAOYSA-N N-methylpyridinium Chemical compound C[N+]1=CC=CC=C1 PQBAWAQIRZIWIV-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 claims description 2
- CXUZILQYXHNBRR-UHFFFAOYSA-N methyl 1-ethylpyridin-1-ium-4-carboxylate Chemical compound CC[N+]1=CC=C(C(=O)OC)C=C1 CXUZILQYXHNBRR-UHFFFAOYSA-N 0.000 claims description 2
- 229940078494 nickel acetate Drugs 0.000 claims description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 2
- UQPSGBZICXWIAG-UHFFFAOYSA-L nickel(2+);dibromide;trihydrate Chemical compound O.O.O.Br[Ni]Br UQPSGBZICXWIAG-UHFFFAOYSA-L 0.000 claims description 2
- HZPNKQREYVVATQ-UHFFFAOYSA-L nickel(2+);diformate Chemical compound [Ni+2].[O-]C=O.[O-]C=O HZPNKQREYVVATQ-UHFFFAOYSA-L 0.000 claims description 2
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 claims description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 2
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 claims description 2
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 claims description 2
- VGTPKLINSHNZRD-UHFFFAOYSA-N oxoborinic acid Chemical compound OB=O VGTPKLINSHNZRD-UHFFFAOYSA-N 0.000 claims description 2
- JBKPUQTUERUYQE-UHFFFAOYSA-O pralidoxime Chemical compound C[N+]1=CC=CC=C1\C=N\O JBKPUQTUERUYQE-UHFFFAOYSA-O 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 22
- 239000000243 solution Substances 0.000 description 71
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 53
- 239000000758 substrate Substances 0.000 description 49
- 229910052802 copper Inorganic materials 0.000 description 29
- 239000010949 copper Substances 0.000 description 29
- 230000000052 comparative effect Effects 0.000 description 23
- 238000005304 joining Methods 0.000 description 16
- 238000001000 micrograph Methods 0.000 description 14
- 238000011156 evaluation Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 11
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 10
- 239000000654 additive Substances 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 7
- 0 [1*]N1=CC=CC=C1.[2*]C.[CH3-] Chemical compound [1*]N1=CC=CC=C1.[2*]C.[CH3-] 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000005238 degreasing Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- AOJFQRQNPXYVLM-UHFFFAOYSA-N pyridin-1-ium;chloride Chemical compound [Cl-].C1=CC=[NH+]C=C1 AOJFQRQNPXYVLM-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- REEBJQTUIJTGAL-UHFFFAOYSA-O 3-pyridin-1-ium-1-ylpropane-1-sulfonic acid Chemical compound OS(=O)(=O)CCC[N+]1=CC=CC=C1 REEBJQTUIJTGAL-UHFFFAOYSA-O 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ASPFUGCSXOABDL-UHFFFAOYSA-N N-(pyridin-1-ium-2-ylmethylidene)hydroxylamine chloride Chemical compound [Cl-].[NH+]1=C(C=CC=C1)C=NO ASPFUGCSXOABDL-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005282 brightening Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- IBOIUWAYPMADRC-UHFFFAOYSA-M 1-propylpyridin-1-ium;chloride Chemical compound [Cl-].CCC[N+]1=CC=CC=C1 IBOIUWAYPMADRC-UHFFFAOYSA-M 0.000 description 1
- DNHDSWZXBHTLDP-UHFFFAOYSA-N 3-(2-ethenylpyridin-1-ium-1-yl)propane-1-sulfonate Chemical compound [O-]S(=O)(=O)CCC[N+]1=CC=CC=C1C=C DNHDSWZXBHTLDP-UHFFFAOYSA-N 0.000 description 1
- DNHDSWZXBHTLDP-UHFFFAOYSA-O 3-(2-ethenylpyridin-1-ium-1-yl)propane-1-sulfonic acid Chemical compound OS(=O)(=O)CCC[N+]1=CC=CC=C1C=C DNHDSWZXBHTLDP-UHFFFAOYSA-O 0.000 description 1
- SJCDYZGKKDQMAR-UHFFFAOYSA-N 3-pyridin-1-ium-1-ylpropane-1-sulfonic acid;hydroxide Chemical compound [OH-].OS(=O)(=O)CCC[N+]1=CC=CC=C1 SJCDYZGKKDQMAR-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229960003237 betaine Drugs 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229940006460 bromide ion Drugs 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 description 1
- VICYBMUVWHJEFT-UHFFFAOYSA-N dodecyltrimethylammonium ion Chemical compound CCCCCCCCCCCC[N+](C)(C)C VICYBMUVWHJEFT-UHFFFAOYSA-N 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 description 1
- 229940006461 iodide ion Drugs 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- OENLEHTYJXMVBG-UHFFFAOYSA-N pyridine;hydrate Chemical compound [OH-].C1=CC=[NH+]C=C1 OENLEHTYJXMVBG-UHFFFAOYSA-N 0.000 description 1
- 229960002290 pyridostigmine Drugs 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
- C25D3/14—Electroplating: Baths therefor from solutions of nickel or cobalt from baths containing acetylenic or heterocyclic compounds
- C25D3/18—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Definitions
- the present invention relates to a nickel electroplating solution and nickel alloy electroplating solution (hereafter, these are referred to generally as “nickel (alloy) electroplating solution”. Besides, “nickel or nickel alloy”, which is deposited by using a “nickel (alloy) electroplating solution”, is referred to as “nickel (alloy)”.), and more specifically, to a nickel (alloy) electroplating solution suitable for filling minute holes or minute recesses in electronic components, or minute gaps between two or more electronic components which are superposed.
- the present invention further relates to a method of filling minute holes or minute recesses using this nickel (alloy) electroplating solution, a method of manufacturing a minute three-dimensional structure, an electronic component assembly, and a method of manufacturing the same.
- Electronic circuit parts such as semiconductors and printed circuit boards have minute holes and minute recesses, such as via for forming wiring, throughholes, and trenches.
- a staggered via structure is usually formed wherein, after performing conformal copper plating of the wall surface of the vias, they are connected to other layers in a staggered arrangement.
- the copper electroplating solution contained two or more additives, and the vias were filled by controlling their optimal concentration balance, even if it were possible to fill so that there were no macrovoids of the order of several ⁇ m, a side effect of the additives was that microvoids of nm order remained.
- Copper is a metal whereof the melting point is not very high (1083° C.), and it is well known that recrystallization occurs after copper electroplating even after standing at room temperature. Hence, there was a problem that, as a result of the condensation of microvoids of nm order in this recrystallization process, macroscopic voids were eventually formed.
- non-patent document 1 it is reported that when polyethylene glycol (PEG) which is an additive is partly taken up by a copper film, microvoids of nm order are formed in the copper film, and in the copper recrystallization process, on standing at room temperature, large voids of diameter 70 nm are formed.
- PEG polyethylene glycol
- the copper filling method which uses a copper electroplating solution has this potential problem, and there is a risk that as the wiring becomes still finer, due to growth of voids and movement of voids resulting from the condensation of microvoids, the reliability of the wiring may be compromised.
- the present invention was conceived in view of the problems inherent in the aforesaid prior art, and aims to provide a nickel (alloy) electroplating solution which can fill minute holes and minute recesses in electronic circuit components without generating defects such as voids and seams, to provide a nickel or nickel alloy filling method using said nickel (alloy) electroplating solution, and a method of manufacturing a minute three-dimensional structure.
- the inventor has intensively studied to solve the above-mentioned problems, and as a result, the inventor has found that by using a nickel electroplating solution containing a specific N-substituted pyridinium compound, minute holes or minute recesses could be filled with nickel without generating defects such as voids, and thereby arrived at the present invention.
- the present invention provides a nickel electroplating solution or nickel alloy electroplating solution containing a nickel salt, a pH buffer, and an N-substituted pyridinium compound represented by the following general formula (A):
- —R 1 is an alkyl group, alkylamino group or cyanoalkyl group, having 1-6 carbon atoms, an amino group (—NH 2 ) or a cyano group
- —R 2 is a hydrogen atom, an alkyl group or hydroxyalkyl group having 1-6 carbon atoms, a vinyl group, a methoxycarbonyl group (—CO—O—CH 3 ), a carbamoyl group (—CO—NH 2 ), a dimethylcarbamoyloxy group (—O—CO—N(CH 2 ) 2 ), or an aldoxime group (—CH ⁇ NOH)
- X ⁇ is an arbitrary anion.
- the present invention further provides a nickel electroplating solution or nickel alloy electroplating solution containing a nickel salt, pH buffer, and an N-substituted pyridinium compound represented by the following general formula (B):
- —R 3 is a hydrogen atom or a hydroxyl group (—OH)
- —R 4 is a hydrogen atom, an alkyl group having 1-6 carbon atoms, a vinyl group, or a carbamoyl group (—CO—NH 2 )
- m is 0, 1, or 2.
- the present invention further provides a method of manufacturing a nickel deposit or a nickel alloy deposit by performing nickel electroplating using said nickel electroplating solution or nickel alloy electroplating solution.
- the present invention further provides a method of manufacturing electronic components wherein minute holes or minute recesses are filled with a nickel deposit or nickel alloy deposit by performing electroplating using said nickel electroplating solution or nickel alloy electroplating solution.
- the present invention further provides a method of manufacturing electronic components wherein, after first forming an electroplating seed layer on the surface of minute holes or minute recesses in the electronic components, said minute holes or minute recesses are filled with a nickel deposit or nickel alloy deposit by immersing the electronic components in said nickel electroplating solution or nickel alloy electroplating solution, and performing electroplating using an external power supply.
- the present invention further provides a method of manufacturing a minute three-dimensional structure including a step of filling minute holes or minute recesses by plating using the aforesaid manufacturing method.
- the present invention further provides a method of manufacturing an electronic component assembly wherein, when two or more electronic components are superposed and minute gaps are formed therebetween, the gaps are filled by immersing the two or more electronic components in said nickel electroplating solution or nickel alloy electroplating solution, and performing electroplating using an external power supply.
- the present invention further provides an electronic component assembly wherein two or more electronic components are joined together by nickel or a nickel alloy, and a larger amount of nickel or nickel alloy is deposited in the vicinity of the minute gap formed between the electronic components than in other parts.
- the present invention further provides a one-sided electronic component junction terminal formed of nickel or a nickel alloy, comprising a plug embedded in a material of thickness 1 mm or less in a substantially perpendicular direction relative to the material surface but not penetrating the material, and a cap having an outer diameter greater than the outer diameter of the plug such that it is in contact therewith, wherein the outer diameter of this cap is 200 ⁇ m or less, and the cap projects from the surface of the material.
- the present invention further provides a two-sided electronic component junction terminal formed of nickel or a nickel alloy, comprising a plug embedded in a material of thickness 1 mm or less in a substantially perpendicular direction relative to the material surface and penetrating the material, and two caps having an outer diameter greater than the outer diameter of the plug such that they are respectively in contact therewith, wherein the outer diameter of each of the two caps is 200 ⁇ m or less, and the two caps project from the respective surfaces of the material.
- the present invention further provides a one-sided electronic component junction terminal formed of nickel or a nickel alloy, comprising a plug embedded in a material of thickness 1 mm or less in a substantially perpendicular direction relative to the material surface but not penetrating the material, wherein the outer diameter of the plug is 100 ⁇ m or less.
- the present invention further provides a two-sided electronic component junction terminal formed of nickel or a nickel alloy, comprising a plug embedded in a material of thickness 1 mm or less in a substantially perpendicular direction relative to the material surface and penetrating the material, wherein the outer diameter of the plug is 100 ⁇ m or less.
- minute holes or minute recesses in electronic circuit components can be filled without generating defects such as voids and seams.
- minute holes and minute recesses can be filled with nickel, which has a high melting point and does not easily recrystallize at room temperature, defects due to condensation of voids do not easily occur even as wiring becomes finer, so this can be widely applied to forming three-dimensional wiring or three-dimensional MEMS (Micro Electro Mechanical Systems) parts which are becoming increasingly miniaturized.
- nickel which has a high melting point and does not easily recrystallize at room temperature, defects due to condensation of voids do not easily occur even as wiring becomes finer, so this can be widely applied to forming three-dimensional wiring or three-dimensional MEMS (Micro Electro Mechanical Systems) parts which are becoming increasingly miniaturized.
- MEMS Micro Electro Mechanical Systems
- the nickel deposit amount in the minute gaps formed when electronic components are superposed can be increased, and the electronic components can be firmly joined together.
- FIG. 1 is a schematic diagram showing a cross section of the plating part periphery of a printed circuit board for evaluation used in the examples.
- FIG. 2 is a photograph of a wiring pattern of the surface of the printed circuit board for evaluation used in the examples.
- FIG. 3 is a schematic diagram showing a cross section before joining electronic components for evaluation (copper wire and copper plate) used in the examples.
- FIG. 4 is a micrograph of a substrate cross section after plating and filling (Example 1).
- FIG. 5 is a micrograph of a substrate cross section after plating and filling (Example 2).
- FIG. 6 is a micrograph of a substrate cross section after plating and filling (Example 3).
- FIG. 7 is a micrograph of a substrate cross section after plating and filling (Example 4).
- FIG. 8 is a micrograph of a substrate cross section after plating and filling (Example 5).
- FIG. 9 is a micrograph of a substrate cross section after plating and filling (Example 6).
- FIG. 10 is a micrograph of a substrate cross section after plating and filling (Comparative Example 1).
- FIG. 11 is a micrograph of a substrate cross section after plating and filling (Comparative Example 2).
- FIG. 12 is a micrograph of a substrate cross section after plating and filling (Comparative Example 3).
- FIG. 13 is a micrograph of cross sections of copper wire and copper plate after plating and filling (Example 7).
- FIG. 14 is a micrograph of cross sections of copper wire and copper plate after plating and filling (Example 8).
- FIG. 15 is a micrograph of cross sections of copper wire and copper plate after plating and filling (Comparative example 4).
- FIG. 16 is a schematic diagram of a substrate cross section when minute holes or minute recesses are filled with nickel (alloy) deposits according to the method of the present invention.
- FIG. 17 is a schematic diagram showing an example of a one-sided electronic component junction terminal according to the present invention.
- FIG. 18 is a schematic diagram showing an example of a two-sided electronic-component junction terminal according to the present invention.
- FIG. 19 is a schematic diagram showing an example of a one-sided electronic component junction terminal according to the present invention.
- FIG. 20 is a schematic diagram showing an example of a two-sided electronic component junction terminal according to the present invention.
- the nickel (alloy) electroplating solution of the present invention contains a nickel salt, a pH buffer and an N-substituted pyridinium compound represented by the following general formula (A) or the following general formula (B).
- —R 1 is an alkyl group, alkylamino group or cyanoalkyl group, having 1-6 carbon atoms, an amino group (—NH 2 ) or a cyano group
- —R 2 is a hydrogen atom, an alkyl group or hydroxyalkyl group having 1-6 carbon atoms, a vinyl group, a methoxy carbonyl group (—CO—O—CH 3 ), a carbamoyl group (—CO—NH 2 ), a dimethylcarbamoyloxy group (—O—CO—N(CH 3 ) 2 ), or an aldoxime group (—CH ⁇ NOH)
- X ⁇ is an arbitrary anion.
- —R 3 is a hydrogen atom or a hydroxyl group (—OH)
- —R 4 is a hydrogen atom, an alkyl group having 1-6 carbon atoms, a vinyl group, or a carbamoyl group (—CO—NH 2 )
- m is 0, 1, or 2.
- the nickel salt contained in the plating solution of the present invention may be, for example, nickel sulfate, nickel sulfamate, nickel chloride, nickel bromide, nickel carbonate, nickel nitrate, nickel formate, nickel acetate, nickel citrate or nickel fluoroboride from the viewpoints of water solubility and filling properties, but the nickel salt is not limited thereto.
- the sum total content of the nickel salt is preferably from 10 g/L to 180 g/L, but more preferably, from 50 g/L to 130 g/L, as nickel ions.
- the nickel deposition rate is sufficient, and minute holes or minute recesses can be filled without generating voids.
- the pH buffer contained in the plating solution of the present invention may be, for example, boric acid, meta-boric acid, acetic acid, tartaric acid, citric acid, and salts thereof, but the pH buffer is not limited thereto.
- the sum total content of the pH buffer is preferably from 1 g/L to 100 g/L, but more preferably from 5 g/L to 50 g/L.
- the pH buffer is not likely to interfere with the action of the N-substituted pyridinium compound represented by the aforesaid general formula (A) or general formula (B) (hereafter, may be referred to as “specific N-substituted pyridinium compound”), and the advantageous effect of the invention is maintained.
- the plating solution of the present invention contains a specific N-substituted pyridinium compound. Due to the action of the specific N-substituted pyridinium compound, the plating solution of the present invention can fill minute holes or minute recesses without generating voids.
- R 1 , R 2 and R 4 in the aforesaid general formula (A) and the aforesaid general formula (B) when R 1 , R 2 , R 4 is an alkyl group, alkylamino group, cyanoalkyl group, or hydroxyalkyl group having 1-6 carbon atoms, R 1 , R 2 , R 4 may be mutually different.
- the number of carbon atoms in R 1 , R 2 , and R 4 is preferably 1-4, more preferably 1-3, but most preferably 1 or 2.
- R 2 As examples of R 2 , —H, —CH 3 , —C 2 H 5 , —CH 2 OH, —CH ⁇ CH 2 , —CONH 2 and —CH ⁇ NOH may be mentioned.
- halide ions chloride ion, bromide ion, iodide ion
- halide chloride, bromide, iodide
- N-substituted pyridinium compound denoted by the aforesaid general formula (B) 1-(3-sulfonate propyl) pyridinium, 1-(2-sulfonate ethyl) pyridinium, 1-(4-sulfonate butyl) pyridinium, 2-vinyl 1-(3-sulfonate propyl) pyridinium, 3-vinyl 1-(3-sulfonate propyl) pyridinium, 4-vinyl 1-(3-sulfonate propyl) pyridinium, 2-methyl 1-(3-sulfonate propyl) pyridinium, 3-methyl 1-(3-sulfonate propyl) pyridinium, 4-methyl 1-(3-sulfonate propyl) pyridinium, 2-ethyl 1-(3-sulfonate propyl) pyridinium, 3-ethyl 1-(3
- “1-(3-sulfonate propyl) pyridinium” is a compound wherein —R 3 is a hydrogen atom, —R 4 is a hydrogen atom and m is 1, and it is also known by other names such as “1-(3-sulfopropyl) pyridinium hydroxide intramolecular salt”, “1-(3-sulfopropyl) pyridinium”, and “PPS”.
- “2-vinyl 1-(3-sulfonate propyl) pyridinium” is a compound wherein —R 3 is a hydrogen atom, —R 4 is vinyl group attached in the ortho position, and m is 1, and it is also known by other names such as “1-(3-sulfopropyl)-2-vinyl pyridinium hydroxide intramolecular salt, “1-(3-sulfo propyl)-2-vinyl pyridinium betaine”, and “PPV”.
- “1-(2-hydroxy-3-sulfonate propyl) pyridinium” is a compound wherein —R 3 is a hydroxyl group, —R 4 is a hydrogen atom, and m is 1, and it is also known by other names such as “1-(2-hydroxy-3-sulfonate propyl) pyridinium hydroxide intramolecular salt”, “1-(2-hydrox-3-sulfo propyl) pyridinium betaine”, and “PPSOH”.
- One type of the specific N-substituted pyridinium compound may be used alone, or two or more may be mixed and used together.
- the sum total content of the specific N-substituted pyridinium compound in the plating solution of the present invention is preferably from 0.01 g/L to 100 g/L, but more preferably from 0.1 g/L to 10 g/L.
- the plating solution of the present invention is a nickel alloy electroplating solution
- metal ions that can be alloyed with nickel are tungsten, molybdenum, cobalt, manganese, iron, zinc, tin, copper, palladium and gold.
- metals carbon, sulfur, nitrogen, phosphorus, boron, chlorine and bromine may be contained in the nickel or nickel alloy film.
- a pit inhibitor, primary brightening agent, secondary brightening agent, surfactant or the like may be added within limits which do not impair the advantages of the present invention.
- the plating solution of the present invention is particularly suitable for filling minute holes or filling minute recesses formed in electronic circuit components, it is applicable also to the manufacture of ordinary nickel (alloy) deposits. That is, the present invention relates also to a method of producing nickel deposits or nickel alloy deposits by performing electroplating using the aforesaid nickel electroplating solution or nickel alloy electroplating solution.
- the deposit amount inside the minute holes or minute recesses is larger than the deposit amount exterior to the minute holes or minute recesses, so nickel (or nickel alloy) can be thoroughly embedded in the minute holes or minute recesses.
- voids (holes) and seams (grooves) do not easily occur inside the minute holes or minute recesses. Consequently, also due to the high melting point of nickel, electronic circuit components wherein minute holes and minute recesses are filled with the plating solution of the present invention are expected to be highly reliable.
- the invention further relates to a method of manufacturing electronic components wherein minute holes or minute recesses are filled with a nickel deposit or nickel alloy deposit by performing electroplating using said nickel electroplating solution or nickel alloy electroplating solution (That is, a method of filling nickel deposits or nickel alloy deposits).
- the present invention is also a method of manufacturing electronic components wherein, after first forming an electroplating seed layer on the surface of the minute holes or minute recesses in the electronic components, the electronic components are immersed in the aforesaid nickel (alloy) electroplating solution, electroplating is performed using an external power supply, and the minute holes or minute recesses are filled with nickel deposits or nickel alloy deposits.
- the present invention is also a method of manufacturing a minute three-dimensional structure including a step of filling minute holes or minute recesses by plating using the aforesaid manufacturing method.
- Minute holes or minute recesses refer to minute hollow portions such as vias, through-holes and trenches formed in electronic circuit components such as semiconductors and printed circuit boards which, by filling them with metal by electro plating, function as wiring parts, and their configuration viewed from above is not limited.
- minute holes may be penetrating or non-penetrating.
- the substrate to be plated is not particularly limited, and as specific examples, glass epoxy, BT (Bismaleimide-Triazine) resin, polypropylene, polyimide, ceramics, silicon, metals and glass may be mentioned.
- the method of forming minute holes and minute recesses in the plating substrate is not particularly limited, and methods known in the art may suitably be used.
- a minute recess can be formed with an opening of 100 ⁇ m or less, and a depth with an aspect ratio of 0.5 or more.
- a pattern is formed on the plating substrate surface by a photoresist or the like.
- the electroplating seed layer is formed on the substrate surface and the inner surface of the minute recess.
- the method of forming the seed layer is not particularly limited, but as examples, metal deposition by sputtering and electroless plating may specifically be mentioned.
- the metal which constitutes the seed layer is not particularly limited, but as examples, copper, nickel, or palladium may be mentioned.
- the substrate to be plated is immersed in the nickel (alloy) electroplating solution of the present invention, nickel (alloy) electroplating is performed using an external power supply, and minute holes and minute recesses are filled with nickel or a nickel alloy.
- electroplating using the plating solution of the present invention may be performed.
- filling of minute holes or minute recesses means filling minute holes and minute recesses without forming large voids (holes).
- the term “filling” is also understood to include the case when the minute holes or minute recesses are not completely filled (for example, as shown in FIG. 16( b ) , FIG. 19( c ) , etc., when, although nickel (alloy) is deposited inside the minute holes or minute recesses, there is also a hollow part, or when nickel or a nickel alloy is deposited even to the peripheral part outside the minute holes or minute recesses (as in the case of FIG. 16( a ) , etc.).
- the minimum plating cross section film thickness (X 2 in FIG. 16 ) in a minute hole or minute recess 30 may be made larger than the maximum plating cross section film thickness (X 1 in FIG. 16 ) of a peripheral part 31 outside the minute hole or minute recess 30 .
- the filling method of the present invention it is possible to increase the nickel (alloy) deposit amount inside the minute hole or minute recess 30 .
- the minute hole or minute recess 30 when filling the inside of the minute hole or minute recess 30 with nickel (alloy), the minute hole or minute recess 30 may be completely filled with nickel (alloy) as shown in FIG. 16( a ) , or part thereof need not be filled as shown in FIG. 16( b ) (i.e., it may have a reverse convex form).
- Fine three-dimensional circuit wiring or a minute three-dimensional structure wherein minute holes and minute recesses are filled with nickel or a nickel alloy can be manufactured by including a step of plating and filling minute holes or minute recesses according to the nickel or nickel alloy filling and plating method of the present invention.
- the plating temperature is preferably 30° C. or more, but more preferably 40° C. or more. Further, it preferably does not exceed 70° C., but more preferably does not exceed 60° C. Within this range, the ability to fill minute holes or minute recesses is superior, and it is also advantageous from the viewpoint of cost.
- the current density for plating is preferably 0.1 A/dm 2 or more, but more preferably 1 A/dm 2 or more. Further, it preferably does not exceed 10 A/dm 2 , but more preferably does not exceed 5 A/dm 2 . Within this range, the ability to fill minute holes or minute recesses is superior, and it is also advantageous from the viewpoint of cost.
- the current density during plating and filling may be constant, but need not be constant (for example, the initial current density may be low and then gradually increased; or pulsed current may be used; etc.).
- filling can be performed easily without generating voids, and this is therefore preferred.
- the plating time is preferably 5 minutes or more, but more preferably 10 minutes or more. Further, it preferably does not exceed 360 minutes, but more preferably does not exceed 60 minutes.
- the present invention is also a method of manufacturing an electronic component assembly where two or more electronic components are superposed, and a minute gap is formed therebetween, wherein the two or more electronic components are immersed in the aforesaid nickel (alloy) electroplating solution, and electroplating is performed using an external power supply.
- Electronic components means parts which are surface mounted on an electronic circuit.
- Electrode assembly means two or more electronic components joined together to form one structure.
- the nickel or nickel alloy deposit amount is large in the vicinity of these minute gaps.
- an electronic component assembly where two or more electronic components are joined together by nickel or a nickel alloy
- an electronic component assembly wherein more nickel or nickel alloy is deposited in the vicinity of the minute gaps formed between the electronic components than in other parts, can be obtained.
- the nickel or nickel alloy deposit amount in the vicinity of the minute gaps is large, so sufficient strength is obtained in parts where the electronic components are joined together, and reliability is high.
- the plating temperature when the electronic component assembly is manufactured is preferably 30° C. or more, but more preferably 40° C. or more. Further, it preferably does not exceed 70° C., and more preferably does not exceed 60° C.
- the nickel or nickel alloy deposit amount in the vicinity of the minute gaps is sufficient, and join strength easily improves.
- the current density when the electronic component assembly is manufactured is preferably 0.1 A/dm 2 or more, but more preferably 1 A/dm 2 or more. Further, it preferably does not exceed 10 A/dm 2 , but more preferably does not exceed 5 A/dm 2 .
- the nickel or nickel alloy deposit amount in the vicinity of the minute gaps is sufficient, and join strength easily improves.
- the current density during plating and filling may be constant, but need not be constant (for example, the initial current density may be set low and then gradually increased; or pulsed current may be used; etc.).
- join strength easily improves, and this is therefore preferred.
- the plating time is preferably 5 minutes or more, but more preferably 10 minutes or more.
- join strength is superior, and it is also advantageous from the viewpoint of cost.
- the present invention relates also to a terminal for joining electronic components with few voids (holes), embedded in a substantially perpendicular direction (60°-90° direction) relative to the surface of a substrate 11 in a substrate having minute holes and minute recesses.
- a terminal 40 for joining electronic components according to the present invention comprises nickel or a nickel alloy.
- the terminal for joining electronic components according to the present invention may be easily formed by using the aforesaid nickel (alloy) electroplating solution of the present invention.
- the terminal 40 for joining electronic components according to the present invention is embedded in the substrate 11 having a thickness of 1 mm or less.
- the terminal 40 for joining electronic components may be a one-sided terminal for joining electronic components (which does not penetrate the substrate 11 ) as shown in FIG. 17 or FIG. 19 , or may be a two-sided terminal for joining electronic components (which does penetrate the substrate 11 ) as shown in FIG. 18 or FIG. 20 .
- the terminal shown in FIG. 17 is the one-sided terminal 40 for joining electronic components provided with a plug 41 embedded in a substantially perpendicular direction relative to the surface of the substrate 11 but not penetrating the substrate 11 , and a cap 42 which is in contact with this plug.
- the cap 42 projects from the surface of the substrate 11 , its outer diameter is larger than the outer diameter of the plug 41 , and is 200 ⁇ m or less.
- outer diameter means the outer diameter of a circle of equivalent surface area (hereafter, the same for the terminal 40 for joining electronic components shown in FIGS. 18-20 ).
- the terminal shown in FIG. 18 is the two-sided terminal 40 for joining electronic components provided with the plug 41 embedded in a substantially perpendicular direction relative to the surface of the substrate 11 and penetrating the substrate 11 , and two caps 42 in contact with the ends of the plug 41 .
- the two caps 42 respectively project from the surface of the substrate 11 , the outer diameters of the two caps 42 are larger than the outer diameter of the plug 41 , and are 200 ⁇ m or less.
- the terminal shown in FIG. 19 is the one-sided terminal 40 for joining electronic components comprising the plug 41 embedded in a substantially perpendicular direction relative to the surface of the substrate 11 , but not penetrating the substrate 11 .
- the outer diameter of the plug 41 is 100 ⁇ m or less.
- the end of the plug 41 may project from the surface of the substrate 11 as shown in FIG. 19( a ) , may have the same height as the surface of the substrate 11 as shown in FIG. 19( b ) , or may be embedded relative to the surface of the substrate 11 as shown in FIG. 19( c ) .
- the terminal shown in FIG. 20 is the two-sided terminal 40 for joining electronic components comprising a plug 41 embedded in a substantially perpendicular direction relative to the surface of the substrate 11 , and penetrating the substrate 11 .
- the outer diameter of the plug 41 is 100 ⁇ m or less.
- the ends of the plug 41 may project from the surface of the substrate 11 as shown in FIG. 20( a ) , may have the same height as the surface of the substrate 11 as shown in FIG. 20( b ) , or may be embedded relative to the surface of the substrate 11 as shown in FIG. 20( c ) .
- a terminal for an electronic component junction of nickel (alloy) embedded in a substrate of thickness 1 mm or less comprising the plug 41 having an outer diameter of 100 ⁇ m or less, and a cap 42 having an outer diameter of 200 ⁇ m or less.
- the terminal When manufacturing the terminal for an electronic component junction using the nickel (alloy) electroplating solution of the present invention, the terminal can be easily embedded in a thin substrate of 0.8 mm or less, or thinner substrate of 0.5 mm or less.
- a terminal for an electronic component junction comprising a plug having a smaller outer diameter of 70 ⁇ m or less or even smaller outer diameter of 50 ⁇ m or less, and a cap having a smaller outer diameter of 150 ⁇ m or less or even smaller outer diameter of 100 ⁇ m or less.
- the plug 41 of the terminal 40 for an electronic component junction does not contain voids having a larger maximum width than 10 ⁇ m.
- the preferred conditions (plating temperature, current density, etc.) for manufacturing the aforesaid terminal for an electronic component junction by plating using the nickel (alloy) electroplating solution of the present invention are substantially identical to the conditions described in the aforesaid section, (Method of manufacturing nickel (alloy)-filled electronic components, and three-dimensional structure).
- Examples 1-6, comparative examples 1-3 As a model of minute recesses, the printed circuit boards for evaluation (made by Japan Circuit Co. Ltd.) of 12 mm angle having laser vias of aspect ratio 0.88 ( ⁇ 45 ⁇ m ⁇ 40 ⁇ m D) were used.
- FIG. 1 shows a cross-sectional view of a plating part periphery 10 .
- a blind via hole (hereafter, may be referred to simply as “via hole” or “via”) 14 having ⁇ 45 ⁇ m ⁇ 40 ⁇ m D was made by a laser, and a seed layer 15 was formed to a thickness of approx. 1 ⁇ m by non-electrolytic copper plating on the substrate outer surface (surface of the buildup resin 12 ) and the inner wall of the via 14 .
- a circuit pattern shown in FIG. 2 was then formed by a dry film resist (DFR) 16 of thickness 25 ⁇ m, and a pad (opening) 17
- the white parts are copper plating parts, and the black parts are dry film resist parts.
- the circular part with the largest size to which wiring is connected is equivalent to the circular pad 17 ( ⁇ 190 ⁇ m) of FIG. 1 .
- the via hole 14 which is the minute recess shown in FIG. 1 was formed in all the circular pads 17 .
- Nickel sulfamate at 600 g/L, nickel chloride at 10 g/L and boric acid at 30 g/L were dissolved in deionized water to prepare a nickel electroplating solution.
- Example 1 1-propyl pyridinium (A) 0.5 chloride
- Example 2 1-(cyanomethyl) pyridinium (A) 0.1 chloride
- Example 3 3-carbamoyl-1-methyl (A) 0.5 pyridinium chloride
- Example 4 1-methyl (A) 0.5 pyridinium-2-aldoxime chloride
- Example 5 1-(3-sulfonate propyl) (B) 0.5 pyridinium
- Example 6 2-vinyl-1-(3-sulfonatee (B) 0.5 propyl) pyridinium Comparative None — —
- Example 1 Comparative Thiourea — 0.2
- Example 2 Comparative Thiourea — 0.1
- Example 3 Dodecyltrimethylammonium — 0.65 Chloride
- Nickel electroplating was performed to the aforesaid printed circuit board 1 for evaluation in a step shown in Table 2.
- the current density was adjusted to 1.0 A/dm 2 using an external power supply.
- the plating area was calculated as the surface area including the sides of the via 14 .
- the substrate was embedded and fixed in a polishing resin, its cross section was polished, and the filling condition of the via was observed with a metallurgical microscope.
- FIGS. 4-12 show micrographs of the substrate cross section after plating and filling.
- Table 3 shows the evaluation results.
- Example 1 1-propyl pyridinium ⁇ No Good chloride
- Example 2 1-(cyanomethyl) ⁇ No Good pyridinium chloride
- Example 3 3-carbamoyl-1-methyl ⁇ No Good pyridinium chloride
- Example 4 1-methyl ⁇ No Good pyridinium-2-aldoxime chloride
- Example 5 1-(3-sulfonate propyl) ⁇ No Good pyridinium
- Example 6 2-vinyl-1-(3-sulfonate ⁇ No Good propyl) pyridinium Comparative None X No Defective Example 1 Comparative Thiourea X No Defective Example 2 Comparative Thiourea ⁇ Yes Defective Example 3 Dodecyltrimethyl ammonium Chloride
- the amount of deposited nickel 18 was larger inside the via holes which are minute recesses than outside the via holes, and the filling was good without voids or seams.
- the plating was conformal plating with approximately the same amount of deposited nickel 18 inside and outside the via holes, and filling was poor.
- Comparative Example 2 the inside of the vias had voids V of maximum width 14 ⁇ m, and filling was poor.
- Comparative Example 3 Although there were no voids inside the vias and filling was good, the deposited part was very weak, cracks had occurred, and remarkable exfoliation of deposited nickel 18 was seen in the upper part of the via after polishing.
- Nickel sulfamate at 600 g/L, nickel chloride at 10 g/L and boric acid at 30 g/L were dissolved in deionized water to prepare a nickel electroplating solution.
- the aforesaid electronic component sample was immersed in the aforesaid nickel electroplating solution so that the linear directions of the copper wire 21 and the plating surface were substantially perpendicular, and nickel electroplating was performed in the step shown in Table 5.
- the nickel anode was made to face the outside of the masking material 22 a every one sheet.
- the current density was adjusted to 1.0 A/dm 2 in a nickel electroplating step using an external power supply.
- the plating area was taken as the surface area of only the copper plate 22 .
- the electronic component sample (assembly) was embedded and fixed in a polishing resin, its cross section was polished, and the join between the copper wire 21 and copper plate 22 was observed with a metallurgical microscope.
- FIGS. 13-15 show micrographs of a cross section of the electronic components sample (assembly) after plating and filling.
- Example 7 1-propyl pyridinium chloride ⁇
- Example 8 2-(vinyl)-1-(3-sulfonate propyl) pyridinium ⁇ Comparative None X
- Example 4
- the amount of deposited nickel 18 in the minute gaps 24 where the copper wire 21 and copper plate 22 were in contact was larger than in other places, and they were joined more firmly together.
- the nickel (alloy) electroplating solution containing an N-substituted pyridinium compound according to the present invention can fill minute holes or minute recesses in electronic circuit components reliably, and as the electronic components can be firmly joined together, the wiring can be made even finer, so the solution has wide application in forming 3-dimensional wiring or 3-dimensional MEMS components.
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Abstract
Description
- The present invention relates to a nickel electroplating solution and nickel alloy electroplating solution (hereafter, these are referred to generally as “nickel (alloy) electroplating solution”. Besides, “nickel or nickel alloy”, which is deposited by using a “nickel (alloy) electroplating solution”, is referred to as “nickel (alloy)”.), and more specifically, to a nickel (alloy) electroplating solution suitable for filling minute holes or minute recesses in electronic components, or minute gaps between two or more electronic components which are superposed.
- The present invention further relates to a method of filling minute holes or minute recesses using this nickel (alloy) electroplating solution, a method of manufacturing a minute three-dimensional structure, an electronic component assembly, and a method of manufacturing the same.
- Electronic circuit parts (hereafter referred to simply as “electronic components”) such as semiconductors and printed circuit boards have minute holes and minute recesses, such as via for forming wiring, throughholes, and trenches.
- In the prior art, in the manufacture of a multilayer printed circuit board wherein a plurality of circuit boards are laminated together, a staggered via structure is usually formed wherein, after performing conformal copper plating of the wall surface of the vias, they are connected to other layers in a staggered arrangement.
- However in recent years, with increasing miniaturization of electronic devices and more advanced features, it has become necessary to save space by forming a staggered via structure wherein the vias are filled with copper plating, and other layers are stacked thereupon to make interlayer connections.
- The technique of filling by copper electro-plating is applied also to semiconductor manufacture, and techniques known as the damascene process and TSV (Through Silicon Via) have emerged. Thus, it is now possible to fill vias by copper electroplating, and to form three-dimensional wiring structures.
- Although the copper electroplating solution contained two or more additives, and the vias were filled by controlling their optimal concentration balance, even if it were possible to fill so that there were no macrovoids of the order of several μm, a side effect of the additives was that microvoids of nm order remained.
- Copper is a metal whereof the melting point is not very high (1083° C.), and it is well known that recrystallization occurs after copper electroplating even after standing at room temperature. Hence, there was a problem that, as a result of the condensation of microvoids of nm order in this recrystallization process, macroscopic voids were eventually formed.
- For example, in non-patent document 1, it is reported that when polyethylene glycol (PEG) which is an additive is partly taken up by a copper film, microvoids of nm order are formed in the copper film, and in the copper recrystallization process, on standing at room temperature, large voids of diameter 70 nm are formed.
- Therefore, the copper filling method which uses a copper electroplating solution has this potential problem, and there is a risk that as the wiring becomes still finer, due to growth of voids and movement of voids resulting from the condensation of microvoids, the reliability of the wiring may be compromised.
- The inventor hypothesized that if a metal having high melting point in which room temperature recrystallization does not easily occur, and in particular nickel (melting point: 1455° C.) which is commonly used for base plating, could be used to fill minute holes and minute recesses, condensation of voids would not occur, and highly reliable wiring could be obtained.
- Attempts to fill recesses by nickel electroplating have been considered.
- In non-patent document 2, the ability to fill trenches when various additives were added to a nickel electroplating solution was considered, and it was stated that minute recesses (trenches) were filled by adding thiourea.
- However, in further tests by the inventors (below-mentioned examples), it was clear that the filling properties of the nickel electroplating solution of non-patent document 2 were still insufficient, generation of voids could not be controlled, cracks were formed in the deposits, and the integrity of the structure was poor.
- Thus, while the miniaturization of electronic circuitry is constantly advancing, the ability of known techniques to fill minute holes and minute recesses was insufficient. Consequently, a nickel filling method whereby defects such as voids, cracks, etc., did not occur, was desired.
-
- Non-patent document 1
- Journal of the Surface Finishing Society of Japan, Vol. 52, No. 1, pp. 34-38 (2001)
- Non-patent document 2
- Journal of the Japan Institute of Electronics Packaging, Vol. 17, No. 2, pp. 143-148 (2014)
- The present invention was conceived in view of the problems inherent in the aforesaid prior art, and aims to provide a nickel (alloy) electroplating solution which can fill minute holes and minute recesses in electronic circuit components without generating defects such as voids and seams, to provide a nickel or nickel alloy filling method using said nickel (alloy) electroplating solution, and a method of manufacturing a minute three-dimensional structure.
- It further aims to provide a nickel (alloy) electroplating solution which can fill minute gaps formed when two or more electronic components are superposed and firmly join the electronic components together, as well as to provide an electronic component assembly using the same.
- The inventor has intensively studied to solve the above-mentioned problems, and as a result, the inventor has found that by using a nickel electroplating solution containing a specific N-substituted pyridinium compound, minute holes or minute recesses could be filled with nickel without generating defects such as voids, and thereby arrived at the present invention.
- That is, the present invention provides a nickel electroplating solution or nickel alloy electroplating solution containing a nickel salt, a pH buffer, and an N-substituted pyridinium compound represented by the following general formula (A):
- In the general formula (A), —R1 is an alkyl group, alkylamino group or cyanoalkyl group, having 1-6 carbon atoms, an amino group (—NH2) or a cyano group, —R2 is a hydrogen atom, an alkyl group or hydroxyalkyl group having 1-6 carbon atoms, a vinyl group, a methoxycarbonyl group (—CO—O—CH3), a carbamoyl group (—CO—NH2), a dimethylcarbamoyloxy group (—O—CO—N(CH2)2), or an aldoxime group (—CH═NOH), and X− is an arbitrary anion.
- The present invention further provides a nickel electroplating solution or nickel alloy electroplating solution containing a nickel salt, pH buffer, and an N-substituted pyridinium compound represented by the following general formula (B):
- In the general formula (B), —R3 is a hydrogen atom or a hydroxyl group (—OH), —R4 is a hydrogen atom, an alkyl group having 1-6 carbon atoms, a vinyl group, or a carbamoyl group (—CO—NH2), and m is 0, 1, or 2.
- The present invention further provides a method of manufacturing a nickel deposit or a nickel alloy deposit by performing nickel electroplating using said nickel electroplating solution or nickel alloy electroplating solution.
- The present invention further provides a method of manufacturing electronic components wherein minute holes or minute recesses are filled with a nickel deposit or nickel alloy deposit by performing electroplating using said nickel electroplating solution or nickel alloy electroplating solution.
- The present invention further provides a method of manufacturing electronic components wherein, after first forming an electroplating seed layer on the surface of minute holes or minute recesses in the electronic components, said minute holes or minute recesses are filled with a nickel deposit or nickel alloy deposit by immersing the electronic components in said nickel electroplating solution or nickel alloy electroplating solution, and performing electroplating using an external power supply.
- The present invention further provides a method of manufacturing a minute three-dimensional structure including a step of filling minute holes or minute recesses by plating using the aforesaid manufacturing method.
- The present invention further provides a method of manufacturing an electronic component assembly wherein, when two or more electronic components are superposed and minute gaps are formed therebetween, the gaps are filled by immersing the two or more electronic components in said nickel electroplating solution or nickel alloy electroplating solution, and performing electroplating using an external power supply.
- The present invention further provides an electronic component assembly wherein two or more electronic components are joined together by nickel or a nickel alloy, and a larger amount of nickel or nickel alloy is deposited in the vicinity of the minute gap formed between the electronic components than in other parts.
- The present invention further provides a one-sided electronic component junction terminal formed of nickel or a nickel alloy, comprising a plug embedded in a material of thickness 1 mm or less in a substantially perpendicular direction relative to the material surface but not penetrating the material, and a cap having an outer diameter greater than the outer diameter of the plug such that it is in contact therewith, wherein the outer diameter of this cap is 200 μm or less, and the cap projects from the surface of the material.
- The present invention further provides a two-sided electronic component junction terminal formed of nickel or a nickel alloy, comprising a plug embedded in a material of thickness 1 mm or less in a substantially perpendicular direction relative to the material surface and penetrating the material, and two caps having an outer diameter greater than the outer diameter of the plug such that they are respectively in contact therewith, wherein the outer diameter of each of the two caps is 200 μm or less, and the two caps project from the respective surfaces of the material.
- The present invention further provides a one-sided electronic component junction terminal formed of nickel or a nickel alloy, comprising a plug embedded in a material of thickness 1 mm or less in a substantially perpendicular direction relative to the material surface but not penetrating the material, wherein the outer diameter of the plug is 100 μm or less.
- The present invention further provides a two-sided electronic component junction terminal formed of nickel or a nickel alloy, comprising a plug embedded in a material of thickness 1 mm or less in a substantially perpendicular direction relative to the material surface and penetrating the material, wherein the outer diameter of the plug is 100 μm or less.
- According to the present invention, by using nickel plating or nickel alloy plating, minute holes or minute recesses in electronic circuit components can be filled without generating defects such as voids and seams.
- According to the present invention, as minute holes and minute recesses can be filled with nickel, which has a high melting point and does not easily recrystallize at room temperature, defects due to condensation of voids do not easily occur even as wiring becomes finer, so this can be widely applied to forming three-dimensional wiring or three-dimensional MEMS (Micro Electro Mechanical Systems) parts which are becoming increasingly miniaturized.
- Further, according to the present invention, as nickel can be deposited in minute parts, the nickel deposit amount in the minute gaps formed when electronic components are superposed can be increased, and the electronic components can be firmly joined together.
-
FIG. 1 is a schematic diagram showing a cross section of the plating part periphery of a printed circuit board for evaluation used in the examples. -
FIG. 2 is a photograph of a wiring pattern of the surface of the printed circuit board for evaluation used in the examples. -
FIG. 3 is a schematic diagram showing a cross section before joining electronic components for evaluation (copper wire and copper plate) used in the examples. -
FIG. 4 is a micrograph of a substrate cross section after plating and filling (Example 1). -
FIG. 5 is a micrograph of a substrate cross section after plating and filling (Example 2). -
FIG. 6 is a micrograph of a substrate cross section after plating and filling (Example 3). -
FIG. 7 is a micrograph of a substrate cross section after plating and filling (Example 4). -
FIG. 8 is a micrograph of a substrate cross section after plating and filling (Example 5). -
FIG. 9 is a micrograph of a substrate cross section after plating and filling (Example 6). -
FIG. 10 is a micrograph of a substrate cross section after plating and filling (Comparative Example 1). -
FIG. 11 is a micrograph of a substrate cross section after plating and filling (Comparative Example 2). -
FIG. 12 is a micrograph of a substrate cross section after plating and filling (Comparative Example 3). -
FIG. 13 is a micrograph of cross sections of copper wire and copper plate after plating and filling (Example 7). -
FIG. 14 is a micrograph of cross sections of copper wire and copper plate after plating and filling (Example 8). -
FIG. 15 is a micrograph of cross sections of copper wire and copper plate after plating and filling (Comparative example 4). -
FIG. 16 is a schematic diagram of a substrate cross section when minute holes or minute recesses are filled with nickel (alloy) deposits according to the method of the present invention. -
FIG. 17 is a schematic diagram showing an example of a one-sided electronic component junction terminal according to the present invention. -
FIG. 18 is a schematic diagram showing an example of a two-sided electronic-component junction terminal according to the present invention. -
FIG. 19 is a schematic diagram showing an example of a one-sided electronic component junction terminal according to the present invention. -
FIG. 20 is a schematic diagram showing an example of a two-sided electronic component junction terminal according to the present invention. - In the following, the present invention is explained, but the present invention is not limited by the following specific embodiments, and can be optionally changed within the range of the technical thought of the present invention.
- (Nickel (alloy) electroplating solution) The nickel (alloy) electroplating solution of the present invention (hereinafter, may be referred to simply as “the plating solution of the present invention”) contains a nickel salt, a pH buffer and an N-substituted pyridinium compound represented by the following general formula (A) or the following general formula (B).
- In the general formula (A), —R1 is an alkyl group, alkylamino group or cyanoalkyl group, having 1-6 carbon atoms, an amino group (—NH2) or a cyano group, —R2 is a hydrogen atom, an alkyl group or hydroxyalkyl group having 1-6 carbon atoms, a vinyl group, a methoxy carbonyl group (—CO—O—CH3), a carbamoyl group (—CO—NH2), a dimethylcarbamoyloxy group (—O—CO—N(CH3)2), or an aldoxime group (—CH═NOH), and X− is an arbitrary anion.
- In the general formula (B), —R3 is a hydrogen atom or a hydroxyl group (—OH), —R4 is a hydrogen atom, an alkyl group having 1-6 carbon atoms, a vinyl group, or a carbamoyl group (—CO—NH2), and m is 0, 1, or 2.
- The nickel salt contained in the plating solution of the present invention may be, for example, nickel sulfate, nickel sulfamate, nickel chloride, nickel bromide, nickel carbonate, nickel nitrate, nickel formate, nickel acetate, nickel citrate or nickel fluoroboride from the viewpoints of water solubility and filling properties, but the nickel salt is not limited thereto.
- These may be used alone, or two or more may be mixed and used together.
- The sum total content of the nickel salt is preferably from 10 g/L to 180 g/L, but more preferably, from 50 g/L to 130 g/L, as nickel ions.
- Within this range, the nickel deposition rate is sufficient, and minute holes or minute recesses can be filled without generating voids.
- The pH buffer contained in the plating solution of the present invention may be, for example, boric acid, meta-boric acid, acetic acid, tartaric acid, citric acid, and salts thereof, but the pH buffer is not limited thereto.
- These may be used alone, or two or more may be mixed and used together.
- The sum total content of the pH buffer is preferably from 1 g/L to 100 g/L, but more preferably from 5 g/L to 50 g/L.
- Within this range, the pH buffer is not likely to interfere with the action of the N-substituted pyridinium compound represented by the aforesaid general formula (A) or general formula (B) (hereafter, may be referred to as “specific N-substituted pyridinium compound”), and the advantageous effect of the invention is maintained.
- The plating solution of the present invention contains a specific N-substituted pyridinium compound. Due to the action of the specific N-substituted pyridinium compound, the plating solution of the present invention can fill minute holes or minute recesses without generating voids.
- Regarding R1, R2 and R4 in the aforesaid general formula (A) and the aforesaid general formula (B), when R1, R2, R4 is an alkyl group, alkylamino group, cyanoalkyl group, or hydroxyalkyl group having 1-6 carbon atoms, R1, R2, R4 may be mutually different.
- The number of carbon atoms in R1, R2, and R4 is preferably 1-4, more preferably 1-3, but most preferably 1 or 2.
- In the aforesaid general formula (A), as examples of R1, —CH3, —CH2CH3 and —CH2CN may be mentioned.
- As examples of R2, —H, —CH3, —C2H5, —CH2OH, —CH═CH2, —CONH2 and —CH═NOH may be mentioned.
- As examples of X−, halide ions (chloride ion, bromide ion, iodide ion) may be mentioned.
- As examples of the N-substituted pyridinium compound represented by the aforesaid general formula (A), halide (chloride, bromide, iodide) of 1-methyl pyridinium, 1-ethyl pyridinium, 1-propylpyridinium, 1-butyl pyridinium, 1-pentyl pyridinium, 1-hexyl pyridinium, 1-ethyl-3-(hydroxymethyl) pyridinium, 1-ethyl 4-(methoxy carbonyl) pyridinium, 1-butyl-4-methyl pyridinium, 1-butyl-3-methyl pyridinium, 1-methyl pyridinium-2-aldoxime, 3-carbamoyl-1-methyl pyridinium, 3-(dimethylcarbamoyloxy)-1-methyl pyridinium (pyridostigmine), and 1-(cyanomethyl) pyridinium, may be mentioned.
- In the aforesaid general formula (B), as specific examples of R4, those identical to R2 may be mentioned.
- As examples of the N-substituted pyridinium compound denoted by the aforesaid general formula (B), 1-(3-sulfonate propyl) pyridinium, 1-(2-sulfonate ethyl) pyridinium, 1-(4-sulfonate butyl) pyridinium, 2-vinyl 1-(3-sulfonate propyl) pyridinium, 3-vinyl 1-(3-sulfonate propyl) pyridinium, 4-vinyl 1-(3-sulfonate propyl) pyridinium, 2-methyl 1-(3-sulfonate propyl) pyridinium, 3-methyl 1-(3-sulfonate propyl) pyridinium, 4-methyl 1-(3-sulfonate propyl) pyridinium, 2-ethyl 1-(3-sulfonate propyl) pyridinium, 3-ethyl 1-(3-sulfonate propyl) pyridinium, 4-ethyl 1-(3-sulfonate propyl) pyridinium, 2-vinyl 1-(4-sulfonate butyl) pyridinium, 3-vinyl 1-(4-sulfonate butyl) pyridinium, 4-vinyl 1-(4-sulfonate butyl) pyridinium, 2-methyl 1-(4-sulfonate butyl) pyridinium, 3-methyl 1-(4-sulfonate butyl) pyridinium, 4-methyl 1-(4-sulfonate butyl) pyridinium, 2-ethyl 1-(4-sulfonate butyl) pyridinium, 3-ethyl 1-(4-sulfonate butyl) pyridinium, 4-ethyl 1-(4-sulfonate butyl) pyridinium, 4-tert-butyl-1-(3-sulfonate propyl) pyridinium, 2,6-dimethyl-1-(3-sulfonate propyl) pyridinium, 3-(amino carbonyl)-1-(3-sulfonate propyl) pyridinium, 1-(2-hydroxy-3-sulfonate propyl) pyridinium, 2-vinyl 1-(2-hydroxy-3-sulfonate propyl) pyridinium, 3-vinyl 1-(2-hydroxy-3-sulfonate propyl) pyridinium, 4-vinyl 1-(2-hydroxy-3-sulfonate propyl) pyridinium, 2-methyl 1-(2-hydroxy-3-sulfonate propyl) pyridinium, 3-methyl 1-(2-hydroxy-3-sulfonate propyl) pyridinium, 4-methyl 1-(2-hydroxy-3-sulfonate propyl) pyridinium, 2-ethyl 1-(2-hydroxy-3-sulfonate propyl) pyridinium, 3-ethyl 1-(2-hydroxy-3-sulfonate propyl) pyridinium and 4-ethyl 1-(2-hydroxy-3-sulfonate propyl) pyridinium, may be mentioned.
- In the general formula (B), “1-(3-sulfonate propyl) pyridinium” is a compound wherein —R3 is a hydrogen atom, —R4 is a hydrogen atom and m is 1, and it is also known by other names such as “1-(3-sulfopropyl) pyridinium hydroxide intramolecular salt”, “1-(3-sulfopropyl) pyridinium”, and “PPS”.
- In the general formula (B), “2-vinyl 1-(3-sulfonate propyl) pyridinium” is a compound wherein —R3 is a hydrogen atom, —R4 is vinyl group attached in the ortho position, and m is 1, and it is also known by other names such as “1-(3-sulfopropyl)-2-vinyl pyridinium hydroxide intramolecular salt, “1-(3-sulfo propyl)-2-vinyl pyridinium betaine”, and “PPV”.
- In the general formula (B), “1-(2-hydroxy-3-sulfonate propyl) pyridinium” is a compound wherein —R3 is a hydroxyl group, —R4 is a hydrogen atom, and m is 1, and it is also known by other names such as “1-(2-hydroxy-3-sulfonate propyl) pyridinium hydroxide intramolecular salt”, “1-(2-hydrox-3-sulfo propyl) pyridinium betaine”, and “PPSOH”.
- One type of the specific N-substituted pyridinium compound may be used alone, or two or more may be mixed and used together.
- The sum total content of the specific N-substituted pyridinium compound in the plating solution of the present invention is preferably from 0.01 g/L to 100 g/L, but more preferably from 0.1 g/L to 10 g/L.
- In the above range, a large amount of nickel can be deposited to the exterior of minute holes or minute recesses, and minute holes and minute recesses can be filled without generating voids.
- When the plating solution of the present invention is a nickel alloy electroplating solution, examples of metal ions that can be alloyed with nickel are tungsten, molybdenum, cobalt, manganese, iron, zinc, tin, copper, palladium and gold.
- As sources of these metals, compounds known in the art can be used.
- Although they are not metals, carbon, sulfur, nitrogen, phosphorus, boron, chlorine and bromine may be contained in the nickel or nickel alloy film.
- In the plating solution of the present invention, if so required, a pit inhibitor, primary brightening agent, secondary brightening agent, surfactant or the like may be added within limits which do not impair the advantages of the present invention.
- Although the plating solution of the present invention is particularly suitable for filling minute holes or filling minute recesses formed in electronic circuit components, it is applicable also to the manufacture of ordinary nickel (alloy) deposits. That is, the present invention relates also to a method of producing nickel deposits or nickel alloy deposits by performing electroplating using the aforesaid nickel electroplating solution or nickel alloy electroplating solution.
- As shown by the following examples, when minute holes or minute recesses are filled by the plating solution of the present invention, the deposit amount inside the minute holes or minute recesses is larger than the deposit amount exterior to the minute holes or minute recesses, so nickel (or nickel alloy) can be thoroughly embedded in the minute holes or minute recesses.
- Moreover, voids (holes) and seams (grooves) do not easily occur inside the minute holes or minute recesses. Consequently, also due to the high melting point of nickel, electronic circuit components wherein minute holes and minute recesses are filled with the plating solution of the present invention are expected to be highly reliable.
- The invention further relates to a method of manufacturing electronic components wherein minute holes or minute recesses are filled with a nickel deposit or nickel alloy deposit by performing electroplating using said nickel electroplating solution or nickel alloy electroplating solution (That is, a method of filling nickel deposits or nickel alloy deposits).
- The present invention is also a method of manufacturing electronic components wherein, after first forming an electroplating seed layer on the surface of the minute holes or minute recesses in the electronic components, the electronic components are immersed in the aforesaid nickel (alloy) electroplating solution, electroplating is performed using an external power supply, and the minute holes or minute recesses are filled with nickel deposits or nickel alloy deposits.
- The present invention is also a method of manufacturing a minute three-dimensional structure including a step of filling minute holes or minute recesses by plating using the aforesaid manufacturing method.
- “Minute holes or minute recesses” refer to minute hollow portions such as vias, through-holes and trenches formed in electronic circuit components such as semiconductors and printed circuit boards which, by filling them with metal by electro plating, function as wiring parts, and their configuration viewed from above is not limited.
- Also, “minute holes” may be penetrating or non-penetrating.
- In order to carry out the present invention, it is required to form minute holes and minute recesses on a substrate in electronic circuit components to be plated.
- The substrate to be plated is not particularly limited, and as specific examples, glass epoxy, BT (Bismaleimide-Triazine) resin, polypropylene, polyimide, ceramics, silicon, metals and glass may be mentioned.
- The method of forming minute holes and minute recesses in the plating substrate is not particularly limited, and methods known in the art may suitably be used.
- For example, laser beam machining or ion etching may be mentioned, and a minute recess can be formed with an opening of 100 μm or less, and a depth with an aspect ratio of 0.5 or more.
- Subsequently, if so required, a pattern is formed on the plating substrate surface by a photoresist or the like.
- When the substrate to be plated in which the minute recess was formed is an insulation substrate, the electroplating seed layer is formed on the substrate surface and the inner surface of the minute recess. The method of forming the seed layer is not particularly limited, but as examples, metal deposition by sputtering and electroless plating may specifically be mentioned.
- The metal which constitutes the seed layer is not particularly limited, but as examples, copper, nickel, or palladium may be mentioned.
- After forming the electroplating seed layer, the substrate to be plated is immersed in the nickel (alloy) electroplating solution of the present invention, nickel (alloy) electroplating is performed using an external power supply, and minute holes and minute recesses are filled with nickel or a nickel alloy.
- When the substrate to be plated is first dried after forming the seed layer, after degreasing and acid cleaning by the usual methods, electroplating using the plating solution of the present invention may be performed.
- Herein, “filling” of minute holes or minute recesses means filling minute holes and minute recesses without forming large voids (holes).
- However, the term “filling” is also understood to include the case when the minute holes or minute recesses are not completely filled (for example, as shown in
FIG. 16(b) ,FIG. 19(c) , etc., when, although nickel (alloy) is deposited inside the minute holes or minute recesses, there is also a hollow part, or when nickel or a nickel alloy is deposited even to the peripheral part outside the minute holes or minute recesses (as in the case ofFIG. 16(a) , etc.). - In the filling method of the present invention, when performing electroplating using an external power supply, the minimum plating cross section film thickness (X2 in
FIG. 16 ) in a minute hole orminute recess 30 may be made larger than the maximum plating cross section film thickness (X1 in FIG. 16) of aperipheral part 31 outside the minute hole orminute recess 30. - That is, in the filling method of the present invention, it is possible to increase the nickel (alloy) deposit amount inside the minute hole or
minute recess 30. - In the filling method of the present invention, when filling the inside of the minute hole or
minute recess 30 with nickel (alloy), the minute hole orminute recess 30 may be completely filled with nickel (alloy) as shown inFIG. 16(a) , or part thereof need not be filled as shown inFIG. 16(b) (i.e., it may have a reverse convex form). - Fine three-dimensional circuit wiring or a minute three-dimensional structure wherein minute holes and minute recesses are filled with nickel or a nickel alloy can be manufactured by including a step of plating and filling minute holes or minute recesses according to the nickel or nickel alloy filling and plating method of the present invention.
- The plating temperature is preferably 30° C. or more, but more preferably 40° C. or more. Further, it preferably does not exceed 70° C., but more preferably does not exceed 60° C. Within this range, the ability to fill minute holes or minute recesses is superior, and it is also advantageous from the viewpoint of cost.
- The current density for plating is preferably 0.1 A/dm2 or more, but more preferably 1 A/dm2 or more. Further, it preferably does not exceed 10 A/dm2, but more preferably does not exceed 5 A/dm2. Within this range, the ability to fill minute holes or minute recesses is superior, and it is also advantageous from the viewpoint of cost.
- The current density during plating and filling may be constant, but need not be constant (for example, the initial current density may be low and then gradually increased; or pulsed current may be used; etc.).
- If the current density is made constant during plating and filling (or constant for most of the time during plating and filling), filling can be performed easily without generating voids, and this is therefore preferred.
- The plating time is preferably 5 minutes or more, but more preferably 10 minutes or more. Further, it preferably does not exceed 360 minutes, but more preferably does not exceed 60 minutes.
- Within this range, the ability to fill minute holes or minute recesses is superior, and it is also advantageous from the viewpoint of cost.
- The present invention is also a method of manufacturing an electronic component assembly where two or more electronic components are superposed, and a minute gap is formed therebetween, wherein the two or more electronic components are immersed in the aforesaid nickel (alloy) electroplating solution, and electroplating is performed using an external power supply.
- “Electronic components” means parts which are surface mounted on an electronic circuit.
- “Electronic component assembly” means two or more electronic components joined together to form one structure.
- When the surfaces of electronic components are plated and plural electronic components are joined together (when an electronic component assembly is manufactured), if the plating film is grown uniformly, the strength may be insufficient and faults may occur in the vicinity of the minute gaps between the electronic components.
- When plating is performed using the nickel (alloy) electroplating solution of the present invention, the nickel or nickel alloy deposit amount is large in the vicinity of these minute gaps.
- Specifically, according to the present invention, in the case of an electronic component assembly where two or more electronic components are joined together by nickel or a nickel alloy, an electronic component assembly wherein more nickel or nickel alloy is deposited in the vicinity of the minute gaps formed between the electronic components than in other parts, can be obtained.
- In the electronic component assembly of the present invention, the nickel or nickel alloy deposit amount in the vicinity of the minute gaps is large, so sufficient strength is obtained in parts where the electronic components are joined together, and reliability is high.
- According to the present invention, the plating temperature when the electronic component assembly is manufactured is preferably 30° C. or more, but more preferably 40° C. or more. Further, it preferably does not exceed 70° C., and more preferably does not exceed 60° C.
- Within the above range, the nickel or nickel alloy deposit amount in the vicinity of the minute gaps is sufficient, and join strength easily improves.
- According to the present invention, the current density when the electronic component assembly is manufactured is preferably 0.1 A/dm2 or more, but more preferably 1 A/dm2 or more. Further, it preferably does not exceed 10 A/dm2, but more preferably does not exceed 5 A/dm2.
- Within the above range, the nickel or nickel alloy deposit amount in the vicinity of the minute gaps is sufficient, and join strength easily improves.
- The current density during plating and filling may be constant, but need not be constant (for example, the initial current density may be set low and then gradually increased; or pulsed current may be used; etc.).
- If the current density is made constant during plating and filling (or constant for most of the time during plating and filling), join strength easily improves, and this is therefore preferred.
- The plating time is preferably 5 minutes or more, but more preferably 10 minutes or more.
- Further, it preferably does not exceed 360 minutes, but more preferably does not exceed 60 minutes.
- Within this range, the join strength is superior, and it is also advantageous from the viewpoint of cost.
- The present invention relates also to a terminal for joining electronic components with few voids (holes), embedded in a substantially perpendicular direction (60°-90° direction) relative to the surface of a
substrate 11 in a substrate having minute holes and minute recesses. - A terminal 40 for joining electronic components according to the present invention comprises nickel or a nickel alloy.
- The terminal for joining electronic components according to the present invention may be easily formed by using the aforesaid nickel (alloy) electroplating solution of the present invention.
- The terminal 40 for joining electronic components according to the present invention is embedded in the
substrate 11 having a thickness of 1 mm or less. - The terminal 40 for joining electronic components may be a one-sided terminal for joining electronic components (which does not penetrate the substrate 11) as shown in
FIG. 17 orFIG. 19 , or may be a two-sided terminal for joining electronic components (which does penetrate the substrate 11) as shown inFIG. 18 orFIG. 20 . - The terminal shown in
FIG. 17 is the one-sided terminal 40 for joining electronic components provided with aplug 41 embedded in a substantially perpendicular direction relative to the surface of thesubstrate 11 but not penetrating thesubstrate 11, and acap 42 which is in contact with this plug. - The
cap 42 projects from the surface of thesubstrate 11, its outer diameter is larger than the outer diameter of theplug 41, and is 200 μm or less. - Although a cross section parallel to the substrate surface of the
plug 41 orcap 42 is usually circular, when it is not circular, “outer diameter” means the outer diameter of a circle of equivalent surface area (hereafter, the same for the terminal 40 for joining electronic components shown inFIGS. 18-20 ). - The terminal shown in
FIG. 18 is the two-sided terminal 40 for joining electronic components provided with theplug 41 embedded in a substantially perpendicular direction relative to the surface of thesubstrate 11 and penetrating thesubstrate 11, and twocaps 42 in contact with the ends of theplug 41. - The two
caps 42 respectively project from the surface of thesubstrate 11, the outer diameters of the twocaps 42 are larger than the outer diameter of theplug 41, and are 200 μm or less. - The terminal shown in
FIG. 19 is the one-sided terminal 40 for joining electronic components comprising theplug 41 embedded in a substantially perpendicular direction relative to the surface of thesubstrate 11, but not penetrating thesubstrate 11. The outer diameter of theplug 41 is 100 μm or less. - The end of the
plug 41 may project from the surface of thesubstrate 11 as shown inFIG. 19(a) , may have the same height as the surface of thesubstrate 11 as shown inFIG. 19(b) , or may be embedded relative to the surface of thesubstrate 11 as shown inFIG. 19(c) . - The terminal shown in
FIG. 20 is the two-sided terminal 40 for joining electronic components comprising aplug 41 embedded in a substantially perpendicular direction relative to the surface of thesubstrate 11, and penetrating thesubstrate 11. The outer diameter of theplug 41 is 100 μm or less. - The ends of the
plug 41 may project from the surface of thesubstrate 11 as shown inFIG. 20(a) , may have the same height as the surface of thesubstrate 11 as shown inFIG. 20(b) , or may be embedded relative to the surface of thesubstrate 11 as shown inFIG. 20(c) . - According to the prior art, it was not possible to manufacture a terminal for an electronic component junction of nickel (alloy) embedded in a substrate of thickness 1 mm or less, comprising the
plug 41 having an outer diameter of 100 μm or less, and acap 42 having an outer diameter of 200 μm or less. - By performing plating using the aforesaid nickel (alloy) electroplating solution of the present invention, generation of voids in the nickel (alloy) deposit is controlled, and a terminal for an electronic component junction of such size can be manufactured in sufficient yield.
- When manufacturing the terminal for an electronic component junction using the nickel (alloy) electroplating solution of the present invention, the terminal can be easily embedded in a thin substrate of 0.8 mm or less, or thinner substrate of 0.5 mm or less.
- It is also easy to manufacture a terminal for an electronic component junction comprising a plug having a smaller outer diameter of 70 μm or less or even smaller outer diameter of 50 μm or less, and a cap having a smaller outer diameter of 150 μm or less or even smaller outer diameter of 100 μm or less.
- It is preferred that the
plug 41 of the terminal 40 for an electronic component junction does not contain voids having a larger maximum width than 10 μm. By using the aforesaid nickel (alloy) electroplating solution of the present invention, a plug without such large voids can easily be formed. - The preferred conditions (plating temperature, current density, etc.) for manufacturing the aforesaid terminal for an electronic component junction by plating using the nickel (alloy) electroplating solution of the present invention, are substantially identical to the conditions described in the aforesaid section, (Method of manufacturing nickel (alloy)-filled electronic components, and three-dimensional structure).
- Hereafter, the present invention will be described in further detail referring to examples and comparative examples, but the present invention should not be construed as being limited thereto unless otherwise stated.
- Examples 1-6, comparative examples 1-3 As a model of minute recesses, the printed circuit boards for evaluation (made by Japan Circuit Co. Ltd.) of 12 mm angle having laser vias of aspect ratio 0.88 (Ø45 μm×40 μm D) were used.
-
FIG. 1 shows a cross-sectional view of aplating part periphery 10. - After sticking a
copper foil 13 ofthickness 12 μm on the via hole forming part of asubstrate 11 of BT (Bismaleimide-Triazine) having a thickness of 0.4 mm, and laminating a prepregtype buildup resin 12 of thickness 60 μm, a blind via hole (hereafter, may be referred to simply as “via hole” or “via”) 14 having Ø45 μm×40 μm D was made by a laser, and aseed layer 15 was formed to a thickness of approx. 1 μm by non-electrolytic copper plating on the substrate outer surface (surface of the buildup resin 12) and the inner wall of the via 14. - A circuit pattern shown in
FIG. 2 was then formed by a dry film resist (DFR) 16 of thickness 25 μm, and a pad (opening) 17 - (Ø190 μm) having the via 14 was formed therein to make the printed circuit board 1 for evaluation.
- In
FIG. 2 , the white parts are copper plating parts, and the black parts are dry film resist parts. Among the white parts, the circular part with the largest size to which wiring is connected is equivalent to the circular pad 17 (Ø190 μm) ofFIG. 1 . - The via
hole 14 which is the minute recess shown inFIG. 1 was formed in all thecircular pads 17. - Nickel sulfamate at 600 g/L, nickel chloride at 10 g/L and boric acid at 30 g/L were dissolved in deionized water to prepare a nickel electroplating solution.
- To the aforesaid nickel electroplating solution, the additives shown in Table 1 were added in the amounts shown in Table 1, and dissolved.
- Next, a suitable amount of an aqueous solution containing 100 g/L of sulfamic acid was added to adjust the pH to 3.6, to thereby prepare the nickel electroplating solution of the present invention.
-
TABLE 1 Addition General amount Additive formula (g/L) Example 1 1-propyl pyridinium (A) 0.5 chloride Example 2 1-(cyanomethyl) pyridinium (A) 0.1 chloride Example 3 3-carbamoyl-1-methyl (A) 0.5 pyridinium chloride Example 4 1-methyl (A) 0.5 pyridinium-2-aldoxime chloride Example 5 1-(3-sulfonate propyl) (B) 0.5 pyridinium Example 6 2-vinyl-1-(3-sulfonatee (B) 0.5 propyl) pyridinium Comparative None — — Example 1 Comparative Thiourea — 0.2 Example 2 Comparative Thiourea — 0.1 Example 3 Dodecyltrimethylammonium — 0.65 Chloride - Nickel electroplating was performed to the aforesaid printed circuit board 1 for evaluation in a step shown in Table 2.
- In the nickel electroplating step, the current density was adjusted to 1.0 A/dm2 using an external power supply.
- The plating area was calculated as the surface area including the sides of the via 14.
-
TABLE 2 Step Reagent Temp. (° C.) Time Degreasing Acid immersion 50° C. 5 min and degreasing solution PAC-200 (Murata Co. Ltd.) Water rinse — — — Acid rinse 10 vol % Room 30 sec sulfuric acid temperature Water rinse — — — Nickel Nickel 50° C. 60 min electroplating electroplating solutions in the Examples and Comparative Examples - After plating, the substrate was embedded and fixed in a polishing resin, its cross section was polished, and the filling condition of the via was observed with a metallurgical microscope.
- As regards filling properties, when there was more deposit amount inside the via hole than the deposit amount outside the via hole, the case where no voids (holes) or seams (grooves) were observed inside the via hole was marked “O”, and other cases were marked “X”.
- It was also observed whether there were any cracks in the via hole exterior.
- When the filling properties were “O” and there was no crack, the result was judged as “good”, otherwise it was judged as “defective”.
-
FIGS. 4-12 show micrographs of the substrate cross section after plating and filling. - Table 3 shows the evaluation results.
-
TABLE 3 Filling Evaluation Additive properties Cracks result Example 1 1-propyl pyridinium ◯ No Good chloride Example 2 1-(cyanomethyl) ◯ No Good pyridinium chloride Example 3 3-carbamoyl-1-methyl ◯ No Good pyridinium chloride Example 4 1-methyl ◯ No Good pyridinium-2-aldoxime chloride Example 5 1-(3-sulfonate propyl) ◯ No Good pyridinium Example 6 2-vinyl-1-(3-sulfonate ◯ No Good propyl) pyridinium Comparative None X No Defective Example 1 Comparative Thiourea X No Defective Example 2 Comparative Thiourea ◯ Yes Defective Example 3 Dodecyltrimethyl ammonium Chloride - In Examples 1-6, the amount of deposited
nickel 18 was larger inside the via holes which are minute recesses than outside the via holes, and the filling was good without voids or seams. - No cracks were observed outside the via holes.
- In Comparative Example 1, the plating was conformal plating with approximately the same amount of deposited
nickel 18 inside and outside the via holes, and filling was poor. - In Comparative Example 2, the inside of the vias had voids V of
maximum width 14 μm, and filling was poor. - In Comparative Example 3, although there were no voids inside the vias and filling was good, the deposited part was very weak, cracks had occurred, and remarkable exfoliation of deposited
nickel 18 was seen in the upper part of the via after polishing. - Therefore, as a minute three-dimensional structure, it was poor.
- From the results of Examples 1-6 and Comparative Examples 1-3, by performing electroplating with the nickel electroplating solution containing a N-substituted pyridinium compound represented by the general formula (A) or general formula (B), minute holes formed in the electronic components could be filled with nickel well, and it was possible to manufacture a minute three-dimensional structure.
- As a model for joined electronic components, copper wire (Ø0.9 mm) and copper plate (20 mm×20 mm×0.3 mmt) whereof the back surface was masked, were used.
- As shown in
FIG. 3 , twocopper plates 22 whereof the back side was masked with a maskingmaterial 22 a were prepared, acopper wire 21 was inserted between the surfaces of the twocopper plates 22 which were not masked, and fixed by ajig 23 so as to formminute gaps 24 between thecopper wire 21 andcopper plate 22. - Nickel sulfamate at 600 g/L, nickel chloride at 10 g/L and boric acid at 30 g/L were dissolved in deionized water to prepare a nickel electroplating solution.
- To the aforesaid nickel electroplating solution, the additives shown in Table 4 were added in the amounts shown in Table 4, and dissolved.
- Next, a suitable amount of an aqueous solution containing 100 g/L of sulfamic acid was added to adjust the pH to 3.6, to thereby prepare the nickel electroplating solution of the present invention.
-
TABLE 4 Addition General amount Additive formula (g/L) Example 7 1-propyl pyridinium (A) 0.5 chloride Example 8 2-(vinyl)-1-(3-sulfonate (B) 0.5 propyl) pyridinium Comparative None — — Example 4 - The aforesaid electronic component sample was immersed in the aforesaid nickel electroplating solution so that the linear directions of the
copper wire 21 and the plating surface were substantially perpendicular, and nickel electroplating was performed in the step shown in Table 5. The nickel anode was made to face the outside of the maskingmaterial 22 a every one sheet. The current density was adjusted to 1.0 A/dm2 in a nickel electroplating step using an external power supply. - The plating area was taken as the surface area of only the
copper plate 22. -
TABLE 5 Step Reagent Temp. (° C.) Time Degreasing Acid immersion 50° C. 5 min and degreasing solution PAC-200 (Murata Co. Ltd.) Water rinse — — — Acid rinse 10 vol % Room 30 sec sulfuric acid temperature Water rinse — — — Nickel Nickel 50° C. 120 min electroplating electroplating solutions in the examples and comparative examples - After plating, the electronic component sample (assembly) was embedded and fixed in a polishing resin, its cross section was polished, and the join between the
copper wire 21 andcopper plate 22 was observed with a metallurgical microscope. - As regards join properties, when the nickel plating thickness of the
minute gaps 24 in contact with thecopper wire 21 andcopper plate 22 was thicker than in other parts, it was marked “O”, otherwise it was marked “X”. -
FIGS. 13-15 show micrographs of a cross section of the electronic components sample (assembly) after plating and filling. - Table 6 shows the evaluation results.
-
TABLE 6 Join Additive properties Example 7 1-propyl pyridinium chloride ◯ Example 8 2-(vinyl)-1-(3-sulfonate propyl) pyridinium ◯ Comparative None X Example 4 - According to Examples 7-8, the amount of deposited
nickel 18 in theminute gaps 24 where thecopper wire 21 andcopper plate 22 were in contact was larger than in other places, and they were joined more firmly together. - In Comparative Example 4, the plating was of substantially uniform thickness in all places, and the join properties were poor.
- As shown by the results for Examples 7-8 and Comparative Example 4, by performing electroplating using the nickel electroplating solution containing a N-substituted pyridinium compound represented by the general formula (A) or the general formula (B), joins between minute components could be plated more thickly with nickel, and they could be joined more firmly together.
- The nickel (alloy) electroplating solution containing an N-substituted pyridinium compound according to the present invention can fill minute holes or minute recesses in electronic circuit components reliably, and as the electronic components can be firmly joined together, the wiring can be made even finer, so the solution has wide application in forming 3-dimensional wiring or 3-dimensional MEMS components.
-
- 1 Printed circuit for evaluation
- 10 Periphery of plated part
- 11 Substrate
- 12 Buildup resin
- 13 Copper foil
- 14 Blind via hole
- 15 Seed layer
- 16 Dry film resist
- 17 Pad
- 18 Deposited nickel (alloy)
- V Void
- 20 Electronic component sample
- 21 Copper wire
- 22 Copper plate
- 22 a Masking material
- 23 Jig
- 24 Minute gap
- 30 Minute hole/minute recess
- 31 Peripheral area
- 40 Terminal for joining electronic components
- 41 Plug
- 42 Cap
Claims (28)
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JP2016-228876 | 2016-11-25 | ||
JP2016228876 | 2016-11-25 | ||
PCT/JP2017/042024 WO2018097184A1 (en) | 2016-11-25 | 2017-11-22 | Electrolytic nickel (alloy) plating solution |
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US16/349,740 Abandoned US20190330753A1 (en) | 2016-11-25 | 2017-11-22 | Nickel (alloy) electroplating solution |
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US (1) | US20190330753A1 (en) |
JP (1) | JP7021781B2 (en) |
KR (2) | KR102442997B1 (en) |
CN (2) | CN114262917A (en) |
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JPS61221394A (en) * | 1985-03-27 | 1986-10-01 | C Uyemura & Co Ltd | Electroplating method |
JPH10245693A (en) * | 1997-03-03 | 1998-09-14 | Murata Mfg Co Ltd | Electroplating bath for nickel and nickel alloy and electroplating method |
JP2005187887A (en) * | 2003-12-25 | 2005-07-14 | Ebara Corp | Plating method and plating apparatus |
US20050173254A1 (en) * | 2004-02-05 | 2005-08-11 | George Bokisa | Nickel cobalt boron ternary alloys |
JP2008308708A (en) * | 2007-06-12 | 2008-12-25 | Fujikura Ltd | Method for forming plated film, and plating apparatus |
JP2012195465A (en) * | 2011-03-17 | 2012-10-11 | Canon Inc | Through hole electrode substrate and manufacturing method of the same |
JP2013039616A (en) * | 2011-08-15 | 2013-02-28 | Kazumasa Onishi | Joining method of tube |
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- 2017-11-22 KR KR1020197014321A patent/KR102442997B1/en active IP Right Grant
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KR102442997B1 (en) | 2022-09-13 |
TWI753971B (en) | 2022-02-01 |
CN114262917A (en) | 2022-04-01 |
KR20180059365A (en) | 2018-06-04 |
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CN109996907A (en) | 2019-07-09 |
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