US20190283129A1 - Bonding material and bonding method using same - Google Patents
Bonding material and bonding method using same Download PDFInfo
- Publication number
- US20190283129A1 US20190283129A1 US16/335,361 US201716335361A US2019283129A1 US 20190283129 A1 US20190283129 A1 US 20190283129A1 US 201716335361 A US201716335361 A US 201716335361A US 2019283129 A1 US2019283129 A1 US 2019283129A1
- Authority
- US
- United States
- Prior art keywords
- metal particles
- particles
- bonding material
- weight
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 196
- 238000000034 method Methods 0.000 title claims abstract description 84
- 239000002245 particle Substances 0.000 claims abstract description 209
- 239000002923 metal particle Substances 0.000 claims abstract description 162
- 239000002184 metal Substances 0.000 claims abstract description 90
- 229910052751 metal Inorganic materials 0.000 claims abstract description 90
- 239000011164 primary particle Substances 0.000 claims abstract description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052802 copper Inorganic materials 0.000 claims abstract description 39
- 239000010949 copper Substances 0.000 claims abstract description 39
- 239000002270 dispersing agent Substances 0.000 claims abstract description 26
- 239000002904 solvent Substances 0.000 claims abstract description 23
- 229910052709 silver Inorganic materials 0.000 claims description 215
- 239000004332 silver Substances 0.000 claims description 215
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 192
- 150000002894 organic compounds Chemical class 0.000 claims description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 32
- 229910052799 carbon Inorganic materials 0.000 claims description 32
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 claims description 10
- 239000002798 polar solvent Substances 0.000 claims description 9
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 claims description 8
- BEFDCLMNVWHSGT-UHFFFAOYSA-N ethenylcyclopentane Chemical compound C=CC1CCCC1 BEFDCLMNVWHSGT-UHFFFAOYSA-N 0.000 claims description 8
- 239000004334 sorbic acid Substances 0.000 claims description 8
- 229940075582 sorbic acid Drugs 0.000 claims description 8
- 235000010199 sorbic acid Nutrition 0.000 claims description 8
- WWZKQHOCKIZLMA-UHFFFAOYSA-N Caprylic acid Natural products CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 claims description 7
- GONOPSZTUGRENK-UHFFFAOYSA-N benzyl(trichloro)silane Chemical compound Cl[Si](Cl)(Cl)CC1=CC=CC=C1 GONOPSZTUGRENK-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- FUZZWVXGSFPDMH-UHFFFAOYSA-N n-hexanoic acid Natural products CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- -1 phosphate ester Chemical class 0.000 claims description 6
- 239000005968 1-Decanol Substances 0.000 claims description 5
- RWLALWYNXFYRGW-UHFFFAOYSA-N 2-Ethyl-1,3-hexanediol Chemical compound CCCC(O)C(CC)CO RWLALWYNXFYRGW-UHFFFAOYSA-N 0.000 claims description 5
- RXEJCNRKXVSXDJ-UHFFFAOYSA-N 3-methylbutane-1,2,4-triol Chemical compound OCC(C)C(O)CO RXEJCNRKXVSXDJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- 150000004671 saturated fatty acids Chemical class 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- 150000004670 unsaturated fatty acids Chemical class 0.000 claims description 3
- 235000021122 unsaturated fatty acids Nutrition 0.000 claims description 3
- 150000001735 carboxylic acids Chemical class 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 106
- 239000000243 solution Substances 0.000 description 24
- 239000000126 substance Substances 0.000 description 22
- 239000010946 fine silver Substances 0.000 description 17
- 230000009974 thixotropic effect Effects 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 13
- 150000003505 terpenes Chemical class 0.000 description 12
- 235000007586 terpenes Nutrition 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 6
- 239000003638 chemical reducing agent Substances 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 229910001961 silver nitrate Inorganic materials 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
- 239000012266 salt solution Substances 0.000 description 4
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 4
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 3
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 3
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 3
- 239000005642 Oleic acid Substances 0.000 description 3
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 3
- SXTLQDJHRPXDSB-UHFFFAOYSA-N copper;dinitrate;trihydrate Chemical compound O.O.O.[Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O SXTLQDJHRPXDSB-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 3
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- MCORDGVZLPBVJB-UHFFFAOYSA-N 2-(2-butoxyethoxy)acetic acid Chemical compound CCCCOCCOCC(O)=O MCORDGVZLPBVJB-UHFFFAOYSA-N 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- HLZKNKRTKFSKGZ-UHFFFAOYSA-N tetradecan-1-ol Chemical compound CCCCCCCCCCCCCCO HLZKNKRTKFSKGZ-UHFFFAOYSA-N 0.000 description 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 1
- 239000001716 (4-methyl-1-propan-2-yl-1-cyclohex-2-enyl) acetate Substances 0.000 description 1
- GDXHBFHOEYVPED-UHFFFAOYSA-N 1-(2-butoxyethoxy)butane Chemical compound CCCCOCCOCCCC GDXHBFHOEYVPED-UHFFFAOYSA-N 0.000 description 1
- OAAZUWWNSYWWHG-UHFFFAOYSA-N 1-phenoxypropan-1-ol Chemical compound CCC(O)OC1=CC=CC=C1 OAAZUWWNSYWWHG-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- CCTFMNIEFHGTDU-UHFFFAOYSA-N 3-methoxypropyl acetate Chemical compound COCCCOC(C)=O CCTFMNIEFHGTDU-UHFFFAOYSA-N 0.000 description 1
- QFZITDCVRJQLMZ-UHFFFAOYSA-N 3-methylbutane-1,2,3-triol Chemical compound CC(C)(O)C(O)CO QFZITDCVRJQLMZ-UHFFFAOYSA-N 0.000 description 1
- YWJHQHJWHJRTAB-UHFFFAOYSA-N 4-(2-Methoxypropan-2-yl)-1-methylcyclohex-1-ene Chemical compound COC(C)(C)C1CCC(C)=CC1 YWJHQHJWHJRTAB-UHFFFAOYSA-N 0.000 description 1
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 1
- HNABEPMQPRYSLY-UHFFFAOYSA-N CC(C)(O)CCO.CC(=O)OCCC(C)(C)O Chemical compound CC(C)(O)CCO.CC(=O)OCCC(C)(C)O HNABEPMQPRYSLY-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- OYHQOLUKZRVURQ-HZJYTTRNSA-N Linoleic acid Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(O)=O OYHQOLUKZRVURQ-HZJYTTRNSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- IPTNXMGXEGQYSY-UHFFFAOYSA-N acetic acid;1-methoxybutan-1-ol Chemical compound CC(O)=O.CCCC(O)OC IPTNXMGXEGQYSY-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- IGODOXYLBBXFDW-UHFFFAOYSA-N alpha-Terpinyl acetate Chemical compound CC(=O)OC(C)(C)C1CCC(C)=CC1 IGODOXYLBBXFDW-UHFFFAOYSA-N 0.000 description 1
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229960004232 linoleic acid Drugs 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000000967 suction filtration Methods 0.000 description 1
- QFKMMXYLAPZKIB-UHFFFAOYSA-N undecan-1-amine Chemical compound CCCCCCCCCCCN QFKMMXYLAPZKIB-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B22F1/0074—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- B22F1/0044—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/07—Metallic powder characterised by particles having a nanoscale microstructure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/10—Copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/15—Nickel or cobalt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/25—Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/25—Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
- B22F2301/255—Silver or gold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
Definitions
- the present invention relates generally to a bonding material and a bonding method using the same. More specifically, the invention relates to a bonding material of a metal paste containing metal particles, such as fine silver particles, and a method for bonding an electronic part, such as an Si chip, on a metal substrate, such as a copper substrate, using the bonding material.
- a metal paste containing metal particles, such as fine silver particles is used as a bonding material to be arranged between articles to be heated to sinter a metal, such as silver, in the bonding material to bond the articles to each other (see, e.g., Patent Documents 1-3).
- a metal paste containing metal particles, such as fine silver particles, dispersed in a solvent is applied on the substrate to be heated to remove the solvent to form a pre-dried film on the substrate, and then, the electronic part is arranged thereon. Then, the pre-dried film is heated while applying a pressure on the electronic part, so that it is possible to bond the electronic part to the substrate via a metal bonding layer.
- Patent Document 1 Japanese Patent Laid-Open No. 2011-80147 (Paragraph Numbers 0014-0020)
- Patent Document 2 Japanese Patent Laid-Open No. 2011-21255 (Paragraph Numbers 0032-0042)
- Patent Document 3 Japanese Patent No. 5976684 (Paragraph Numbers 0014-0022)
- the bonding materials of Patent Documents 1-2 are used for bonding copper substrates to each other or for bonding a copper substrate to a copper chip, they can be satisfactorily bonded to each other.
- the bonding materials of Patent Documents 1-2 are used for bonding an Si chip to a metal substrate, such as a copper substrate, there are some cases where it is not possible to satisfactorily bond them to each other due to the generation of voids in a metal bonding layer or on the boundary between the metal bonding layer and the Si chip.
- the viscosities of the bonding materials of Patent Documents 1-2 are too high, so that there are some cases where it is not possible to satisfactorily print them on a substrate by a predetermined printing system, such as an inkjet printing system.
- Patent Document 3 if the bonding material of Patent Document 3 is used for bonding an Si chip to a metal substrate, such as a copper substrate, there are some cases where it is not satisfactorily bond them to each other due to the generation of voids in the metal bonding layer or the like unless the Si chip is arranged on a pre-dried film to be burned, the pre-dried film being formed by volatilizing a solvent to some extent by pre-burning after the bonding material is applied on the metal substrate.
- the inventors have diligently studied and found that it is possible to provide a bonding material, which is easily printed on a metal substrate, such as a copper substrate, and which can satisfactorily bond an Si chip to the metal substrate, and a bonding method using the same, if the bonding material of a metal paste comprises a solvent, a dispersant and metal particles which contain first metal particles having an average primary particle diameter of 1 to 40 nm, second metal particles having an average primary particle diameter of 41 to 110 nm,
- the weight percentages of the first, second and third metal particles are 1.4 to 49% by weight, 36% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles, and the weight ratio of the first metal particles to the second metal particles is 14/36 or more.
- a bonding material of a metal paste comprising: metal particles which contain first metal particles having an average primary particle diameter of 1 to 40 nm, second metal particles having an average primary particle diameter of 41 to 110 nm, and third metal particles having an average primary particle diameter of 120 nm to 10 ⁇ m; a solvent; and a dispersant, wherein the weight percentages of the first, second and third metal particles are 1.4 to 49% by weight, 36% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles, and the weight ratio of the first metal particles to the second metal particles is 14/36 or more.
- each of the first metal particles is preferably coated with an organic compound having a carbon number of not greater than 8
- each of the second metal particles is coated with an organic compound having a carbon number of not greater than 8.
- Each of the second metal particles is preferably coated with an organic compound having a carbon number of not greater than 8 while each of the third metal particles is preferably coated with an organic compound having a carbon number of not less than 9, the weight percentage of the first metal particles being preferably 1.4 to 25% by weight with respect to the total 100% by weight of the metal particles.
- the organic compound having the carbon number of not greater than 8 is preferably a saturated or unsaturated fatty acid having a carbon number of 1 to 6, and more preferably hexanoic acid or sorbic acid.
- the weight percentage of the second metal particles is 2 to 17% by weight with respect to the total 100% by weight of the metal particles.
- the solvent is preferably a polar solvent.
- the polar solvent is preferably one or more selected from the group consisting of 1-decanol, 1-dodecanol, 2-ethyl-1,3-hexanediol and 2-methyl-butane-1,3,4-triol.
- the dispersant is preferably one or more selected from the group consisting of carboxylic acid dispersants and phosphate ester dispersants.
- the total content of the metal particles in the bonding material is preferably 87 to 97% by weight.
- the metal particles are preferably gold particles, silver particles, copper particles or nickel particles, more preferably silver particles or copper particles, and most preferably silver particles.
- a bonding method comprising the steps of: arranging the above-described bonding material between articles; and heating the bonding material to sinter a metal therein to form a metal bonding layer to bond the articles to each other with the metal bonding layer.
- a method for producing a bonding material of a metal paste which comprises metal particles, a solvent and a dispersant comprising the steps of: preparing metal particles which contain first metal particles having an average primary particle diameter of 1 to 40 nm, second metal particles having an average primary particle diameter of 41 to 110 nm, and third metal particles having an average primary particle diameter of 120 nm to 10 ⁇ m; causing the weight percentages of the first, second and third metal particles to be 1.4 to 49% by weight, 36% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles while causing the weight ratio of the first metal particles to the second metal particles to be 14/36 or more; and mixing the metal particles with a solvent and a dispersant.
- each of the second metal particles is preferably coated with an organic compound having a carbon number of not greater than 8 while each of the third metal particles is preferably coated with an organic compound having a carbon number of not less than 9, the weight percentage of the first metal particles being preferably 1.4 to 25% by weight with respect to the total 100% by weight of the metal particles.
- the weight percentage of the second metal particles is preferably 2 to 17% by weight with respect to the total 100% by weight of the metal particles.
- the solvent is preferably a polar solvent.
- the average primary particle diameter of metal particles means an average value of primary particle diameters of metal particles obtained on the basis of a transmission electron microphotograph (TEM image) or a scanning electron microphotograph (SEM image).
- a bonding material which is easily printed on a metal substrate, such as a copper substrate, and which can satisfactorily bond an Si chip to the metal substrate by preventing voids from being generated in a metal bonding layer and/or on the boundary between the metal bonding layer and the Si chip or the copper substrate even if no pre-burning is carried out when the Si chip is bonded to the metal substrate, and a bonding method using the same.
- FIG. 1 is a triangular graph showing the ranges of the weight percentages of the first metal particles (small particles A), second metal particles (medium particles B) and third metal particles (large particles C) as triangular coordinates in the preferred embodiment of a bonding material according to the present invention.
- the bonding material of a metal paste comprises metal particles, a solvent and a dispersant, the metal particles comprising first metal particles having an average primary particle diameter of 1 to 40 nm, second metal particles having an average primary particle diameter of 41 to 110 nm,
- the weight percentages of the first, second and third metal particles being 1.4 to 49% by weight, 36% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles, and the weight ratio (weight of the first metal particles/weight of the second metal particles) of the first metal particles to the second metal particles being 14/36 or more.
- the weight percentages (% by weight) of the first metal particles (small particles A), second metal particles (medium particles B) and third metal particles (large particles C) are in a pentagonal region (containing the outline of the pentagonal region) obtained by connecting a point a (49, 1, 50), a point b (14, 36, 50), a point c (1.4, 3.6, 95), a point d (5, 0, 95) and a point e (49, 0, 51) by straight lines in this order, the points a, b, c, d and e being arranged on the coordinates of a triangle ABC (triangular coordinates) having vertexes which are a point A (100, 0, 0) at which the weight percentages of the first, second and third metal particles are 100% by weight, 0% by weight and 0% by weight, respectively, a point B (0, 100, 0) at which the weight percentages of the
- the straight line bC (except for the point C) shows a case where the weight ratio (weight of the first metal particles/weight of the second metal particles) of the first metal particles to the second metal particles (medium particles B) is 14/36.
- the weight percentages (% by weight) of the first metal particles (small particles A), second metal particles (medium particles B) and third metal particles (large particles C) are preferably 2 to 40% by weight, 32% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles.
- the weight percentages of the first, second and third metal particles are more preferably 2.5 to 30% by weight, 29% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles.
- the weight percentage of the first metal particles is preferably 1.4 to 25% by weight with respect to the total 100% by weight of the metal particles in order to lower the viscosity of the bonding material to allow the bonding material to be easily printed on the metal substrate.
- the weight percentage of the second metal particles is preferably 17% by weight or less with respect to the total 100% by weight of the metal particles in order to satisfactorily bond the Si chip to the metal substrate, and the weight percentage of the second metal particles is more preferably 2 to 17% by weight with respect to the total 100% by weight of the metal particles in order to lower the viscosity of the bonding material to allow the bonding material to be easily printed on the metal substrate.
- the average primary particle diameter of the first metal particles is 1 to 40 nm. This average primary particle diameter is preferably 5 to 30 nm and more preferably 10 to 20 nm in order to satisfactorily bond an Si chip to a metal substrate by preventing voids from being generated when the bonding material is used for bonding the Si chip to the metal substrate.
- the average primary particle diameter of the second metal particles is 41 to 110 nm. This average primary particle diameter is preferably 50 to 105 nm and more preferably 55 to 100 nm in order to allow the bonding material to be easily printed on a metal substrate and to satisfactorily bond an Si chip to the metal substrate when the bonding material is used for bonding the Si chip to the metal substrate.
- Each of the first metal particles (small particles) and second metal particles (medium particles) is preferably coated with an organic compound having a carbon number of not greater than 8 (the organic compounds of the first and second metal particles being preferably different types of organic compounds) since they are easily to agglutinate due to the small particle diameter thereof.
- an organic compound is preferably a saturated or unsaturated fatty acid having a carbon number of 1 to 6, and more preferably hexanoic acid or sorbic acid.
- the average primary particle diameter of the third metal particles (large particles) is 120 nm to 10 ⁇ m.
- This average primary particle diameter is preferably 0.2 to 5 ⁇ m and more preferably 0.3 to 3 ⁇ m in order to allow the bonding material to be easily printed on a metal substrate when the bonding material is used for bonding an Si chip to the metal substrate.
- Each of the third metal particles may be coated with an organic compound (such as a fatty acid or an amine).
- the weight percentage of the first metal particles is preferably 1.4 to 25% by weight with respect to the total 100% by weight of the metal particles while the second and third metal particles are preferably coated with an organic compound having a carbon number of 8 or less and an organic compound having a carbon number of 9 or more, respectively, in order to lower the viscosity of the bonding material to allow the bonding material to be easily printed on the metal substrate.
- the viscosity of the bonding material can be lowered in comparison with a case where the first and third metal particles are added without adding the second metal particles.
- an organic compound having a carbon number of 9 or more there may be used fatty acids (such as carboxylic acids) and amines having a carbon number of 9 to 20, such as lauric acid, stearic acid, palmitic acid, oleic acid, linolic acid, linolenic acid, laurylamine, undecylamine and dodecylamine.
- the organic compound having the carbon number of 9 or more is preferably an amine or carboxylic acid having a carbon number of 12 to 20 and more preferably an amine or carboxylic acid having a carbon number of 14 to 18 in order to lower the viscosity of the bonding material.
- the metal particles are preferably gold particles, silver particles, copper particles or nickel particles (in order to satisfactorily bond an Si chip to a metal substrate when the bonding material is used for bonding the Si chip to the metal substrate), more preferably silver particles or copper particles (in order to allow the bonding material to have good conductivity), and most preferably silver particles (in order to improve the resistance to oxidation of the bonding material).
- the total content of the metal particles in the bonding material is preferably 87 to 97% by weight and more preferably 90 to 95% by weight (in order to satisfactorily bond an Si chip to a metal substrate when the bonding material is used for boding the Si chip to the metal substrate).
- the average primary particle diameter of the metal particles can be calculated, for example, from the primary particle diameters of optionally selected 100 or more of metal particles (the diameter of a circle corresponding to a circle having the same area as that of each of the metal particles) on an image (SEM image or TEM image) obtained by observing the metal particles by means of a transmission electron microscope (TEM) (JEM-1011 produced by Japan Electron Optics Laboratory Ltd.) or a scanning electron microscope (SEM) (S-4700 produced by Hitachi Hi-Technologies Corporation) at a predetermined magnification.
- TEM transmission electron microscope
- SEM scanning electron microscope
- the calculation of the average primary particle diameter (number average) of the metal particles can be carried out, for example, by an image analysis software (A-image-kun (registered trademark) produced by Asahi Kasei Engineering Corporation).
- the content of the solvent in the metal paste is preferably 1 to 10% by weight and more preferably 2 to 8% by weight (in order to obtain a metal paste in which the metal particles can sintered to form a metal bonding layer and which has such a viscosity that the bonding material is easily printed).
- this solvent there may be used any one of various polar solvents (dispersing media).
- the polar solvent there may be used water, alcohol, polyol, glycol ether, 1-methylpyrrolidinone, pyridine, terpineol, butyl carbitol, butyl carbitol acetate, texanol, phenoxypropanol, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, ⁇ -butyrolactone, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, methoxybutyl acetate, methoxypropyl acetate, diethylene glycol monoethyl ether acetate, ethyl lactate, 1-octanol or the like.
- 1-decanol 1-dodecanol, 1-tetradecanol, 3-methyl-1,3-butanediol-3-hydroxy-3-methylbutyl acetate, 2-ethyl-1,3-hexanediol, hexyl diglycol, 2-ethylhexyl glycol, dibutyl glycol, glycerin, dihydroxy terpineol, dihydroxy terpineol acetate, 2-methyl-butane-2,3,4-triol (isoprene triol A (IPTL-A produced by Nippon Terpene Chemicals, Inc.)), 2-methyl-butane-1,3,4-triol (isoprene triol B (IPTL-B produced by Nippon Terpene Chemicals, Inc.)), Terusolve IPG-2Ac (produced by Nippon Terpene Chemicals, Inc.), Terusolve MTPH (produced by Nippon
- the content of the dispersant in the metal paste is preferably 0.01 to 2% by weight and more preferably 0.03 to 0.7% by weight.
- this dispersant there may be used any one of commercially available dispersants.
- View Light LCA-H, LCA-25NH produced by Sanyo Chemical Industries, Ltd.
- FLOREN DOPA-15B produced by Kyoeisha Chemical Co., Ltd.
- SOLPLUS AX5, SOLSPARSE 9000, SOLSIX 250 produced by Lubrizol Japan Co., Ltd.
- EFKA4008 produced by EFKAADIDIBS
- AJISPAR-PA 111 produced by Ajinomoto Fine-Tecno Co., Inc.
- TEXAPHOR-UV21 produced by Gognics Japan Co., Ltd.
- Disper BYK 2020, BYK 220S produced by BYK-Chemie Japan Co., Ltd.
- DISPARON 1751N produced by Kus
- the viscosity of the metal paste is preferably 5 to 2500 Ps ⁇ s, more preferably 5 to 1000 Pa ⁇ s and most preferably 10 to 500 Pa ⁇ s when it is measured at 25° C. and 2 s ⁇ 1 .
- the viscosity of the metal paste is preferably 1 to 150 Pa ⁇ s, more preferably 1 to 100 Pa ⁇ s and most preferably 2 to 35 Pa ⁇ s when it is measured at ° C. and 20 s ⁇ 1 .
- a bonding material of a metal paste containing metal particles, a solvent and a dispersant there is produced a bonding material of a metal paste containing metal particles, a solvent and a dispersant.
- metal particles which comprises first metal particles having an average primary particle diameter of 1 to 40 nm, second metal particles having an average primary particle diameter of 41 to 110 nm, and third metal particles having an average primary particle diameter of 120 nm to 10 ⁇ m.
- the weight percentages of the first, second and third metal particles are caused to be 1.4 to 49% by weight, 36% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles, and the weight ratio of the first metal particles to the second metal particles is caused to be 14/36 or more. Then, the metal particles are mixed (and kneaded) with a solvent and a dispersant.
- the above-described bonding material is arranged between articles, e.g., between an Si chip (which has a bonded surface to a metal substrate, the bonded surface being silver-plated or gold-plated) and the metal substrate (such as a copper substrate having a bonded surface to the Si chip, the bonded surface being silver-plated or gold-plated, or a pure copper substrate) to be heated to sinter a metal, such as silver, in the bonding material to form a metal bonding layer to bond the articles (e.g., the Si chip and the metal substrate) to each other with the metal bonding layer.
- an Si chip which has a bonded surface to a metal substrate, the bonded surface being silver-plated or gold-plated
- the metal substrate such as a copper substrate having a bonded surface to the Si chip, the bonded surface being silver-plated or gold-plated, or a pure copper substrate
- the above-described bonding material can be applied on at least one of two articles (by printing or the like) to be arranged between the articles to be heated at a temperature of 210 to 400° C., preferably at a temperature of 210 to 300° C., to sinter a metal in the metal paste to form a metal bonding layer to bond the articles to each other with the metal bonding layer.
- the bonding material may be applied on at least one of two articles to be heated at a temperature of 60 to 200° C., preferably at a temperature of 80 to 170° C., to be dried to form a pre-dried film, and then, the other article may be arranged on the pre-dried film to heat the pre-dried film at a temperature of 210 to 400° C., preferably at a temperature of 210 to 300° C., to sinter a metal in the metal paste to form a metal bonding layer to bond the articles to each other with the metal bonding layer.
- a pressure may be applied between the articles although it is not required to apply the pressure between the articles.
- the articles can be bonded to each other even if the heating of the bonding material (or the pre-dried film) is carried out at the atmosphere although they can be bonded to each other even if the heating is carried out at an inert atmosphere, such as an atmosphere of nitrogen.
- a bonding material according to the present invention is used for bonding an Si chip to a metal substrate, such as a copper substrate, it is possible to easily print the bonding material on the metal substrate, and it is possible to prevent voids from being generated in a metal bonding layer and on the boundary between the metal bonding layer and the Si chip to satisfactorily bond them to each other even if no pre-burning is carried out.
- the area of the bonded surface of the Si chip to the metal substrate is large (when the area of the bonded surface is preferably 25 mm 2 or less, more preferably 1 to 25 mm 2 and most preferably 4 to 25 mm 2 ), it is possible to satisfactorily bond them to each other.
- An aqueous silver nitrate solution was prepared as an aqueous silver salt solution by dissolving 33.8 g of silver nitrate crystal (produced by Wako Pure Chemical Industries, Ltd.) in 180 g of water. The temperature of the aqueous silver salt solution was adjusted to be 60° C. Then, 0.00008 g (1 ppm of copper with respect to silver) of copper nitrate tri-hydrate (produced by Wako Pure Chemical Industries, Ltd.) was added to the aqueous silver salt solution.
- the above-described aqueous silver salt solution was added to the above-described reducing agent solution at a stroke to start a reduction while the solution was stirred. After about 10 seconds from the starting of the reduction, the variation in color of a slurry being a reaction solution was completed. The aging of the solution was carried out for 10 minutes while the solution was stirred, and thereafter, the stirring of the solution was stopped. Then, the solid-liquid separation of the solution was carried out by suction filtration to obtain a solid body. The solid body was washed with pure water to be dried at 40° C. for 12 hours to obtain a dried powder of fine silver particles (silver nanoparticles) (coated with hexanoic acid).
- the percentage of silver in the fine silver particles was calculated to be 97% by weight on the basis of the weight of the fine silver particles after hexanoic acid was removed by heating.
- the average primary particle diameter of the fine silver particles was obtained to be 17 nm by means of a transmission electron microscope (TEM).
- the aggregates of the fine silver particles (silver nanoparticles) coated with sorbic acid were thus formed, a liquid containing the aggregates of the fine silver particles was filtered by a No. 5C filter paper, and then, a recovery obtained by filtration was washed with pure water to obtain the aggregates of the fine silver particles.
- the aggregates of the fine silver particles were dried at 80° C. for 12 hours in a vacuum dryer to obtain a dried powder of the aggregates of the fine silver particles.
- the dried powder of the aggregates of the fine silver particles thus obtained was broken to adjust the size of the secondary aggregates thereof.
- the average primary particle diameter of the fine silver particles was obtained by means of a scanning electron microscope (SEM). As a result, the average primary particle diameter was 85 nm.
- the mixture thus obtained was kneaded, and the kneaded mixture was caused to pass through a three-roll mill to obtain a bonding material of a silver paste. Furthermore, the total content of the first, second and third silver particles in the bonding material (silver paste) was 92% by weight, and the weight ratio (first silver particles:second silver particles:third silver particles) of the first, second and third silver particles was 16:8:76.
- the viscosity of this bonding material was obtained by a rheometer (viscoelasticity measuring apparatus) (HAAKE RheoStress 600 produced by Thermo Scientific, Inc.), using a cone having a cone diameter of 35 mm and a cone angle of 2°). As a result, the viscosity measured at 25° C. was 309 (Pa ⁇ s) at 2 s ⁇ 1 and 26 (Pa ⁇ s) at 20 s ⁇ 1 .
- the ratio (thixotropic ratio) Ti of the viscosity at 2 s ⁇ 1 to the viscosity at 20 s ⁇ 1 was 11.7 when the viscosity was measure at 25° C., and the printability (print quality) of the bonding material (silver paste) was good.
- a metal mask having a thickness of 50 ⁇ m was arranged on each of the substrates to apply the above-described bonding material (silver paste) on each of the substrates so as to have the same size as the area of the back of the Si chip and a thickness of 50 ⁇ m by means of a metal squeegee.
- an inert oven was used for raising the temperature of the bonding material at a temperature raising rate of 0.05° C./s from 25° C. to 250° C. in an atmosphere of nitrogen to hold the temperature thereof at 250° C. for 60 minutes to burn the bonding material to sinter silver in the silver paste to form a silver bonding layer to bond the Si chip to each of the substrates with the silver bonding layer.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 14.5 g, 0 g and 77.5 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 16:0:84).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 712 (Pa ⁇ s) at 2 s ⁇ 1 and 49 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 14.6, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 19.78 g, 0 g and 72.22 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 22:0:78).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 1034 (Pa ⁇ s) at 2 s ⁇ 1 and 47 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 22.0, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 14.5 g, 12.5 g and 65.0 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 16:14:70).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 357 (Pa ⁇ s) at 2 s ⁇ 1 and 22 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 16.0, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 14.75 g, 14.75 g and 62.5 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 16:16:68).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 287 (Pa ⁇ s) at 2 s ⁇ 1 and 25 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 11.6, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 12.5 g, 7.5 g and 72.0 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 14:8:78).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 211 (Pa ⁇ s) at 2 s ⁇ 1 and 17 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 12.4, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 7.25 g, 7.25 g and 77.5 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 8:8:84).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 118 (Pa ⁇ s) at 2 s ⁇ 1 and 15 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 8.1, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 14.5 g, 26.8 g and 50.7 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 16:29:55).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 28 (Pa ⁇ s) at 2 s ⁇ 1 and 9 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 3.0, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate, and the Si chip was satisfactorily bonded to the substrate thereof. However, voids were observed in the bonded article having the Si chip bonded to the copper substrate which was not plated with silver, and the Si chip was not satisfactorily bonded to the substrate thereof.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 14.5 g, 17.5 g and 60.0 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 16:19:65).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 96 (Pa ⁇ s) at 2 s ⁇ 1 and 20 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 4.8, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate, and the Si chip was satisfactorily bonded to the substrate thereof. However, voids were observed in the bonded article having the Si chip bonded to the copper substrate which was not plated with silver, and the Si chip was not satisfactorily bonded to the substrate thereof.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 7.5 g, 9.75 g and 74.75 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 8:11:81).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 86 (Pa ⁇ s) at 2 s ⁇ 1 and 13 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 6.6, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 4.5 g, 7.5 g and 80.0 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 5:8:87).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 62 (Pa ⁇ s) at 2 s ⁇ 1 and 13 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 4.7, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 27.6 g, 0 g and 64.4 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 30:0:70).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 2135 (Pa ⁇ s) at 2 s ⁇ 1 and 127 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 16.9, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 27.6 g, 18.4 g and 46.0 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 30:20:50).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 2186 (Pa ⁇ s) at 2 s ⁇ 1 and 96 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 22.8, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate, and the Si chip was satisfactorily bonded to the substrate thereof. However, voids were observed in the bonded article having the Si chip bonded to the copper substrate which was not plated with silver, and the Si chip was not satisfactorily bonded to the substrate thereof.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 2.3 g, 2.3 g and 87.4 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 2.5:2.5:95).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 37 (Pa ⁇ s) at 2 s ⁇ 1 and 11 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 3.4, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- a bonding material was produced by the same method as that in Example 1, except that silver particles (coated with sorbic acid) (Superfine Silver Powder-2 produced by DOWA ELECTRONICS MATERIALS CO., LTD.) having a micron size (an average primary particle diameter of 0.3 ⁇ m obtained from the SEM image thereof) was used as the third silver particles (large particles) in place of the silver particles (coated with oleic acid) (AG2-1C produced by DOWA ELECTRONICS MATERIALS CO., LTD.) having the micron size (the average primary particle diameter of 0.3 ⁇ m obtained from the SEM image thereof).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C.
- the thixotropic ratio Ti was 12.0, and the printability (print quality) of the bonding material (silver paste) was good.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 4.5 g, 17.5 g and 70.0 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 5:19:76).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 20 (Pa ⁇ s) at 2 s ⁇ 1 and 8 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 2.4, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, voids were observed in each of the two bonded articles, and the Si chip was not satisfactorily bonded to the substrate in each of the two bonded articles.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 9.2 g, 27.6 g and 55.2 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 10:30:60).
- the viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 13 (Pa ⁇ s) at 2 s ⁇ 1 and 7 (Pa ⁇ s) at 20 s ⁇ 1 .
- the thixotropic ratio Ti was 1.7, and the printability (print quality) of the bonding material (silver paste) was good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, voids were observed in each of the two bonded articles, and the Si chip was not satisfactorily bonded to the substrate in each of the two bonded articles.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 27.6 g, 27.6 g and 36.8 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 30:30:40).
- the viscosity of the bonding material was attempted to be obtained by the same method as that in Example 1. However, it was not possible to measure the viscosity thereof since it exceeds the measurement upper limit, and the printability (print quality) of the bonding material (silver paste) was not good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate, and the Si chip was satisfactorily bonded to the substrate thereof. However, voids were observed in the bonded article having the Si chip bonded to the copper substrate which was not plated with silver, and the Si chip was not satisfactorily bonded to the substrate thereof.
- a bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 46.0 g, 9.2 g and 36.8 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 50:10:40).
- the viscosity of the bonding material was attempted to be obtained by the same method as that in Example 1. However, it was not possible to measure the viscosity thereof since it exceeds the measurement upper limit, and the printability (print quality) of the bonding material (silver paste) was not good.
- the bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate, and the Si chip was satisfactorily bonded to the substrate thereof. However, voids were observed in the bonded article having the Si chip bonded to the copper substrate which was not plated with silver, and the Si chip was not satisfactorily bonded to the substrate thereof.
- Tables 1-2 The producing conditions and characteristics of the bonding materials in these examples and comparative examples are shown in Tables 1-2.
- Table 1 “o” is shown if no voids were observed in each of the bonded articles, “x” is shown if voids were observed in each of the bonded articles, and “ ⁇ ” is shown if voids were observed in the bonded article having the Si chip to the copper substrate which was not plated with silver although no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate.
- the weight percentages of the first silver particles (small particles), second silver particles (medium particles) and third silver particles (large particles) are 1.4 to 49% by weight, 36% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the silver particles, and the weight ratio of the first silver particles (small particles) to the second silver particles (medium particles) is 14/36 or more.
- the weight percentages and the weight ratio are not in such ranges.
- the weight percentages (% by weight) of the first silver particles (small particles), second silver particles (medium particles) and third silver particles (large particles) are in a pentagonal region (containing the outline of the pentagonal region) obtained by connecting a point a (49, 1, 50), a point b (14, 36, 50), a point c (1.4, 3.6, 95), a point d (5, 0, 95) and a point e (49, 0, 51) by straight lines in this order, the points a, b, c, d and e being arranged on the coordinates of a triangle (triangular coordinates) shown in FIG. 1 .
- the weight percentages (% by weight) of the small, medium and large particles are out of the pentagonal region.
- the weight percentage of the second silver particles (medium particles) in the silver particles of the bonding material is 19% by weight or more, voids were observed in the bonded article having the Si chip bonded to the copper substrate which was not plated with silver although no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate. Therefore, it can be seen that the weight percentage of the second silver particles (medium particles) in the silver particles of the bonding material is preferably less than 19% by weight.
- Example 2 it can be seen from the comparison of Example 2 with Examples 1, 4, 5, 8 and 9 that the weight percentage of the third silver particles (large particles) is decreased to lower the viscosity of the bonding material if the second silver particles (medium particles) are added to the bonding material. If the viscosity of the bonding material is thus lowered, the printability of the bonding material is caused to be good, so that the handling of the bonding material is caused to be good. For that reason, the second silver particles (medium particles) are preferably added to the bonding material.
- Example 12 it can be seen from the comparison of Example 12 with Example 13 that the viscosity of the bonding material is not lowered even if the second silver particles (medium particles) to the bonding material when the weight percentage of the first silver particles (small particles) in the silver particles of the bonding material is increased to be 30% by weight. Furthermore, it can be seen from the comparison of Example 1 with Example 15 that the viscosity of the bonding material is increased if the second silver particles (medium particles) and the third silver particles (large particles) are coated with an organic compound having the same carbon number (sorbic acid having a carbon number of 6) as shown in Example 15.
- the carbon number of the organic compound coating the third silver particles is preferably larger than the carbon number of the organic compound coating the second silver particles (medium particles) (the organic compound coating the third silver particles preferably has a longer main chain in its molecule than that of the organic compound coating the second silver particles).
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Powder Metallurgy (AREA)
- Die Bonding (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Conductive Materials (AREA)
Abstract
Description
- The present invention relates generally to a bonding material and a bonding method using the same. More specifically, the invention relates to a bonding material of a metal paste containing metal particles, such as fine silver particles, and a method for bonding an electronic part, such as an Si chip, on a metal substrate, such as a copper substrate, using the bonding material.
- In recent years, it is proposed that a metal paste containing metal particles, such as fine silver particles, is used as a bonding material to be arranged between articles to be heated to sinter a metal, such as silver, in the bonding material to bond the articles to each other (see, e.g., Patent Documents 1-3).
- When such a bonding material is used for fixing an electronic part, such as an Si chip, on a metal substrate, such as a copper substrate, a metal paste containing metal particles, such as fine silver particles, dispersed in a solvent is applied on the substrate to be heated to remove the solvent to form a pre-dried film on the substrate, and then, the electronic part is arranged thereon. Then, the pre-dried film is heated while applying a pressure on the electronic part, so that it is possible to bond the electronic part to the substrate via a metal bonding layer.
- If the bonding materials of Patent Documents 1-2 are used for bonding copper substrates to each other or for bonding a copper substrate to a copper chip, they can be satisfactorily bonded to each other. However, if the bonding materials of Patent Documents 1-2 are used for bonding an Si chip to a metal substrate, such as a copper substrate, there are some cases where it is not possible to satisfactorily bond them to each other due to the generation of voids in a metal bonding layer or on the boundary between the metal bonding layer and the Si chip. In addition, the viscosities of the bonding materials of Patent Documents 1-2 are too high, so that there are some cases where it is not possible to satisfactorily print them on a substrate by a predetermined printing system, such as an inkjet printing system. Moreover, if the bonding material of Patent Document 3 is used for bonding an Si chip to a metal substrate, such as a copper substrate, there are some cases where it is not satisfactorily bond them to each other due to the generation of voids in the metal bonding layer or the like unless the Si chip is arranged on a pre-dried film to be burned, the pre-dried film being formed by volatilizing a solvent to some extent by pre-burning after the bonding material is applied on the metal substrate.
- It is therefore an object of the present invention to eliminate the aforementioned conventional problems and to provide a bonding material, which is easily printed on a metal substrate, such as a copper substrate, and which can satisfactorily bond an Si chip to the metal substrate by preventing voids from being generated in a metal bonding layer and/or on the boundary between the metal bonding layer and the Si chip or the metal substrate even if no pre-burning is carried out when the Si chip is bonded to the metal substrate, and a bonding method using the same.
- In order to accomplish the aforementioned object, the inventors have diligently studied and found that it is possible to provide a bonding material, which is easily printed on a metal substrate, such as a copper substrate, and which can satisfactorily bond an Si chip to the metal substrate, and a bonding method using the same, if the bonding material of a metal paste comprises a solvent, a dispersant and metal particles which contain first metal particles having an average primary particle diameter of 1 to 40 nm, second metal particles having an average primary particle diameter of 41 to 110 nm,
- and third metal particles having an average primary particle diameter of 120 nm to 10 μm, the weight percentages of the first, second and third metal particles are 1.4 to 49% by weight, 36% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles, and the weight ratio of the first metal particles to the second metal particles is 14/36 or more. Thus, the inventors have made the present invention.
- According to the present invention, there is provided a bonding material of a metal paste comprising: metal particles which contain first metal particles having an average primary particle diameter of 1 to 40 nm, second metal particles having an average primary particle diameter of 41 to 110 nm, and third metal particles having an average primary particle diameter of 120 nm to 10 μm; a solvent; and a dispersant, wherein the weight percentages of the first, second and third metal particles are 1.4 to 49% by weight, 36% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles, and the weight ratio of the first metal particles to the second metal particles is 14/36 or more.
- In this bonding material, each of the first metal particles is preferably coated with an organic compound having a carbon number of not greater than 8, and each of the second metal particles is coated with an organic compound having a carbon number of not greater than 8. Each of the second metal particles is preferably coated with an organic compound having a carbon number of not greater than 8 while each of the third metal particles is preferably coated with an organic compound having a carbon number of not less than 9, the weight percentage of the first metal particles being preferably 1.4 to 25% by weight with respect to the total 100% by weight of the metal particles. In these cases, the organic compound having the carbon number of not greater than 8 is preferably a saturated or unsaturated fatty acid having a carbon number of 1 to 6, and more preferably hexanoic acid or sorbic acid. The weight percentage of the second metal particles is 2 to 17% by weight with respect to the total 100% by weight of the metal particles. The solvent is preferably a polar solvent. The polar solvent is preferably one or more selected from the group consisting of 1-decanol, 1-dodecanol, 2-ethyl-1,3-hexanediol and 2-methyl-butane-1,3,4-triol. The dispersant is preferably one or more selected from the group consisting of carboxylic acid dispersants and phosphate ester dispersants. The total content of the metal particles in the bonding material is preferably 87 to 97% by weight. The metal particles are preferably gold particles, silver particles, copper particles or nickel particles, more preferably silver particles or copper particles, and most preferably silver particles.
- According to the present invention, there is provided a bonding method comprising the steps of: arranging the above-described bonding material between articles; and heating the bonding material to sinter a metal therein to form a metal bonding layer to bond the articles to each other with the metal bonding layer.
- According to the present invention, there is provided a method for producing a bonding material of a metal paste which comprises metal particles, a solvent and a dispersant, the method comprising the steps of: preparing metal particles which contain first metal particles having an average primary particle diameter of 1 to 40 nm, second metal particles having an average primary particle diameter of 41 to 110 nm, and third metal particles having an average primary particle diameter of 120 nm to 10 μm; causing the weight percentages of the first, second and third metal particles to be 1.4 to 49% by weight, 36% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles while causing the weight ratio of the first metal particles to the second metal particles to be 14/36 or more; and mixing the metal particles with a solvent and a dispersant.
- In this method for producing a bonding material, each of the second metal particles is preferably coated with an organic compound having a carbon number of not greater than 8 while each of the third metal particles is preferably coated with an organic compound having a carbon number of not less than 9, the weight percentage of the first metal particles being preferably 1.4 to 25% by weight with respect to the total 100% by weight of the metal particles. The weight percentage of the second metal particles is preferably 2 to 17% by weight with respect to the total 100% by weight of the metal particles. The solvent is preferably a polar solvent.
- Throughout the specification, the expression “the average primary particle diameter of metal particles” means an average value of primary particle diameters of metal particles obtained on the basis of a transmission electron microphotograph (TEM image) or a scanning electron microphotograph (SEM image).
- According to the present invention, it is possible to provide a bonding material, which is easily printed on a metal substrate, such as a copper substrate, and which can satisfactorily bond an Si chip to the metal substrate by preventing voids from being generated in a metal bonding layer and/or on the boundary between the metal bonding layer and the Si chip or the copper substrate even if no pre-burning is carried out when the Si chip is bonded to the metal substrate, and a bonding method using the same.
-
FIG. 1 is a triangular graph showing the ranges of the weight percentages of the first metal particles (small particles A), second metal particles (medium particles B) and third metal particles (large particles C) as triangular coordinates in the preferred embodiment of a bonding material according to the present invention. - In the preferred embodiment of a bonding material according to the present invention, the bonding material of a metal paste comprises metal particles, a solvent and a dispersant, the metal particles comprising first metal particles having an average primary particle diameter of 1 to 40 nm, second metal particles having an average primary particle diameter of 41 to 110 nm,
- and third metal particles having an average primary particle diameter of 120 nm to 10 μm, the weight percentages of the first, second and third metal particles being 1.4 to 49% by weight, 36% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles, and the weight ratio (weight of the first metal particles/weight of the second metal particles) of the first metal particles to the second metal particles being 14/36 or more.
- That is, in the preferred embodiment of a bonding material according to the present invention, as shown in
FIG. 1 , the weight percentages (% by weight) of the first metal particles (small particles A), second metal particles (medium particles B) and third metal particles (large particles C) are in a pentagonal region (containing the outline of the pentagonal region) obtained by connecting a point a (49, 1, 50), a point b (14, 36, 50), a point c (1.4, 3.6, 95), a point d (5, 0, 95) and a point e (49, 0, 51) by straight lines in this order, the points a, b, c, d and e being arranged on the coordinates of a triangle ABC (triangular coordinates) having vertexes which are a point A (100, 0, 0) at which the weight percentages of the first, second and third metal particles are 100% by weight, 0% by weight and 0% by weight, respectively, a point B (0, 100, 0) at which the weight percentages of the first, second and third metal particles are 0% by weight, 100% by weight and 0% by weight, respectively, and a point C at which the weight percentages of the first, second and third metal particles are 0% by weight, 0% by weight and 100% by weight, respectively. Furthermore, in the triangular coordinates shown inFIG. 1 , the straight line bC (except for the point C) shows a case where the weight ratio (weight of the first metal particles/weight of the second metal particles) of the first metal particles to the second metal particles (medium particles B) is 14/36. - The weight percentages (% by weight) of the first metal particles (small particles A), second metal particles (medium particles B) and third metal particles (large particles C) are preferably 2 to 40% by weight, 32% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles. The weight percentages of the first, second and third metal particles are more preferably 2.5 to 30% by weight, 29% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles. In particular, when the bonding material is used for bonding an Si chip to a metal substrate, the weight percentage of the first metal particles is preferably 1.4 to 25% by weight with respect to the total 100% by weight of the metal particles in order to lower the viscosity of the bonding material to allow the bonding material to be easily printed on the metal substrate. When the bonding material is used for bonding an Si chip to a metal substrate, the weight percentage of the second metal particles is preferably 17% by weight or less with respect to the total 100% by weight of the metal particles in order to satisfactorily bond the Si chip to the metal substrate, and the weight percentage of the second metal particles is more preferably 2 to 17% by weight with respect to the total 100% by weight of the metal particles in order to lower the viscosity of the bonding material to allow the bonding material to be easily printed on the metal substrate.
- The average primary particle diameter of the first metal particles (small particles) is 1 to 40 nm. This average primary particle diameter is preferably 5 to 30 nm and more preferably 10 to 20 nm in order to satisfactorily bond an Si chip to a metal substrate by preventing voids from being generated when the bonding material is used for bonding the Si chip to the metal substrate. The average primary particle diameter of the second metal particles (medium particles) is 41 to 110 nm. This average primary particle diameter is preferably 50 to 105 nm and more preferably 55 to 100 nm in order to allow the bonding material to be easily printed on a metal substrate and to satisfactorily bond an Si chip to the metal substrate when the bonding material is used for bonding the Si chip to the metal substrate. Each of the first metal particles (small particles) and second metal particles (medium particles) is preferably coated with an organic compound having a carbon number of not greater than 8 (the organic compounds of the first and second metal particles being preferably different types of organic compounds) since they are easily to agglutinate due to the small particle diameter thereof. Such an organic compound is preferably a saturated or unsaturated fatty acid having a carbon number of 1 to 6, and more preferably hexanoic acid or sorbic acid. The average primary particle diameter of the third metal particles (large particles) is 120 nm to 10 μm. This average primary particle diameter is preferably 0.2 to 5 μm and more preferably 0.3 to 3 μm in order to allow the bonding material to be easily printed on a metal substrate when the bonding material is used for bonding an Si chip to the metal substrate. Each of the third metal particles (large particles) may be coated with an organic compound (such as a fatty acid or an amine). In particular, when the bonding material is used for bonding an Si chip to a metal substrate, the weight percentage of the first metal particles is preferably 1.4 to 25% by weight with respect to the total 100% by weight of the metal particles while the second and third metal particles are preferably coated with an organic compound having a carbon number of 8 or less and an organic compound having a carbon number of 9 or more, respectively, in order to lower the viscosity of the bonding material to allow the bonding material to be easily printed on the metal substrate. If the carbon number of the organic compound coating the third metal particles is larger than the carbon number of the organic compound coating the second metal particles (if the organic compound coating the third metal particles has a longer main chain in its molecule than that of the organic compound coating the second metal particles), the viscosity of the bonding material can be lowered in comparison with a case where the first and third metal particles are added without adding the second metal particles. As such an organic compound having a carbon number of 9 or more, there may be used fatty acids (such as carboxylic acids) and amines having a carbon number of 9 to 20, such as lauric acid, stearic acid, palmitic acid, oleic acid, linolic acid, linolenic acid, laurylamine, undecylamine and dodecylamine. The organic compound having the carbon number of 9 or more is preferably an amine or carboxylic acid having a carbon number of 12 to 20 and more preferably an amine or carboxylic acid having a carbon number of 14 to 18 in order to lower the viscosity of the bonding material. The metal particles are preferably gold particles, silver particles, copper particles or nickel particles (in order to satisfactorily bond an Si chip to a metal substrate when the bonding material is used for bonding the Si chip to the metal substrate), more preferably silver particles or copper particles (in order to allow the bonding material to have good conductivity), and most preferably silver particles (in order to improve the resistance to oxidation of the bonding material). The total content of the metal particles in the bonding material is preferably 87 to 97% by weight and more preferably 90 to 95% by weight (in order to satisfactorily bond an Si chip to a metal substrate when the bonding material is used for boding the Si chip to the metal substrate).
- Furthermore, the average primary particle diameter of the metal particles can be calculated, for example, from the primary particle diameters of optionally selected 100 or more of metal particles (the diameter of a circle corresponding to a circle having the same area as that of each of the metal particles) on an image (SEM image or TEM image) obtained by observing the metal particles by means of a transmission electron microscope (TEM) (JEM-1011 produced by Japan Electron Optics Laboratory Ltd.) or a scanning electron microscope (SEM) (S-4700 produced by Hitachi Hi-Technologies Corporation) at a predetermined magnification. The calculation of the average primary particle diameter (number average) of the metal particles can be carried out, for example, by an image analysis software (A-image-kun (registered trademark) produced by Asahi Kasei Engineering Corporation).
- The content of the solvent in the metal paste is preferably 1 to 10% by weight and more preferably 2 to 8% by weight (in order to obtain a metal paste in which the metal particles can sintered to form a metal bonding layer and which has such a viscosity that the bonding material is easily printed). As this solvent, there may be used any one of various polar solvents (dispersing media). For example, as the polar solvent, there may be used water, alcohol, polyol, glycol ether, 1-methylpyrrolidinone, pyridine, terpineol, butyl carbitol, butyl carbitol acetate, texanol, phenoxypropanol, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, γ-butyrolactone, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, methoxybutyl acetate, methoxypropyl acetate, diethylene glycol monoethyl ether acetate, ethyl lactate, 1-octanol or the like. As such a polar solvent, there is preferably used 1-decanol, 1-dodecanol, 1-tetradecanol, 3-methyl-1,3-butanediol-3-hydroxy-3-methylbutyl acetate, 2-ethyl-1,3-hexanediol, hexyl diglycol, 2-ethylhexyl glycol, dibutyl glycol, glycerin, dihydroxy terpineol, dihydroxy terpineol acetate, 2-methyl-butane-2,3,4-triol (isoprene triol A (IPTL-A produced by Nippon Terpene Chemicals, Inc.)), 2-methyl-butane-1,3,4-triol (isoprene triol B (IPTL-B produced by Nippon Terpene Chemicals, Inc.)), Terusolve IPG-2Ac (produced by Nippon Terpene Chemicals, Inc.), Terusolve MTPH (produced by Nippon Terpene Chemicals, Inc.), Terusolve DTO-210 (produced by Nippon Terpene Chemicals, Inc.), Terusolve THA-90 (produced by Nippon Terpene Chemicals, Inc.), Terusolve THA-70 (produced by Nippon Terpene Chemicals, Inc.), Terusolve TOE-100 (produced by Nippon Terpene Chemicals, Inc.), dihydroterpinyl oxyethanol (produced by Nippon Terpene Chemicals, Inc.), terpinyl methyl ether (produced by Nippon Terpene Chemicals, Inc.), dihydroterpinyl methyl ether (produced by Nippon Terpene Chemicals, Inc.) or the like, and there is more preferably used at least one of 1-decanol, 1-dodecanol, 2-ethyl-1,3-hexanediol, and 2-methyl-butane-1,3,4-triol (isoprene triol B (IPTL-B)).
- The content of the dispersant in the metal paste is preferably 0.01 to 2% by weight and more preferably 0.03 to 0.7% by weight. As this dispersant, there may be used any one of commercially available dispersants. For example, there may be used View Light LCA-H, LCA-25NH (produced by Sanyo Chemical Industries, Ltd.), FLOREN DOPA-15B (produced by Kyoeisha Chemical Co., Ltd.), SOLPLUS AX5, SOLSPARSE 9000, SOLSIX 250 (produced by Lubrizol Japan Co., Ltd.), EFKA4008 (produced by EFKAADIDIBS), AJISPAR-PA 111 (produced by Ajinomoto Fine-Tecno Co., Inc.), TEXAPHOR-UV21 (produced by Gognics Japan Co., Ltd.), Disper BYK 2020, BYK 220S (produced by BYK-Chemie Japan Co., Ltd.), DISPARON 1751N, HIPRARD ED-152 (produced by Kusumoto Chemicals, Ltd.), FTX-2075, FTERGENT (produced by NEOS Co., Ltd.), AS-1100 (produced by Toagosei Co., Ltd.), KAOCERA 2000, KDH-154, MX-2045L, HOMOGENOL L-18, LEODOL SP-010V (produced by Kao Corporation), EPAN U103, CYANOL DC902B, NOIGEN EA-167, PLYSURF A219B (produced by DKS Co., Ltd.), MEGAFAC F-477 (produced by DIC Corporation), SILFACE SAG503A, DYNOL 604 (produced by Nissin Chemical Co., Ltd.), SN SPARSE 2180, SN LEVELER S-906 (produced by SAN NOPCO LIMITED), S-386 (produced by AGC SEIMI CHEMICAL CO., LTD.), SOLPLUS D540, SOLSPARSE 44000, SOLSPARSE 43000, SOLSPARSE 20000, SOLSPARSE 27000 (produced by Lubrizol Japan Co., Ltd.), Cirrasol G-265, Hypermer KD1, Hypermer KD2, Hypermer KD3, Hypermer KD4, Hypermer KD9, Hypermer KD11, Hypermer KD12, Hypermer KD16, Hypermer KD57, Armer 163 (produced by CRODA Corporation), Synperoic T701, Zephrym PD2246SF, Zephrym 3300B (produced by CRODA Corporation), SANSPARL PS-2, CARRYBON L400 (produced by Sanyo Chemical Industries, Ltd.), Disper BYK 2055, Disper BYK 2155, Disper BYK 2055, Disper BYK 193, BYKP 105, BYKPR 606, Disper BYK 2013, Disper BYK 108, Disper BYK 109, Disper BYK 145, Disper BYK 2008, Disper BYK 2096, Disper BYK 2152, BYK-LPC 2214, BYK-LPC 22124, BYK-LPC 22126, BYK-LPC 22125 (produced by BYK-Chemie Japan Co., Ltd.) or the like. There is preferably used at least one of carboxylic acid dispersants and phosphate ester dispersants.
- The viscosity of the metal paste is preferably 5 to 2500 Ps·s, more preferably 5 to 1000 Pa·s and most preferably 10 to 500 Pa·s when it is measured at 25° C. and 2 s−1. The viscosity of the metal paste is preferably 1 to 150 Pa·s, more preferably 1 to 100 Pa·s and most preferably 2 to 35 Pa·s when it is measured at ° C. and 20 s−1.
- In the preferred embodiment of a method for producing a bonding material according to the present invention, there is produced a bonding material of a metal paste containing metal particles, a solvent and a dispersant. In this method, there are prepared metal particles which comprises first metal particles having an average primary particle diameter of 1 to 40 nm, second metal particles having an average primary particle diameter of 41 to 110 nm, and third metal particles having an average primary particle diameter of 120 nm to 10 μm. The weight percentages of the first, second and third metal particles are caused to be 1.4 to 49% by weight, 36% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the metal particles, and the weight ratio of the first metal particles to the second metal particles is caused to be 14/36 or more. Then, the metal particles are mixed (and kneaded) with a solvent and a dispersant.
- In the preferred embodiment of a bonding method according to the present invention, the above-described bonding material is arranged between articles, e.g., between an Si chip (which has a bonded surface to a metal substrate, the bonded surface being silver-plated or gold-plated) and the metal substrate (such as a copper substrate having a bonded surface to the Si chip, the bonded surface being silver-plated or gold-plated, or a pure copper substrate) to be heated to sinter a metal, such as silver, in the bonding material to form a metal bonding layer to bond the articles (e.g., the Si chip and the metal substrate) to each other with the metal bonding layer.
- Specifically, the above-described bonding material can be applied on at least one of two articles (by printing or the like) to be arranged between the articles to be heated at a temperature of 210 to 400° C., preferably at a temperature of 210 to 300° C., to sinter a metal in the metal paste to form a metal bonding layer to bond the articles to each other with the metal bonding layer. Alternatively, the bonding material may be applied on at least one of two articles to be heated at a temperature of 60 to 200° C., preferably at a temperature of 80 to 170° C., to be dried to form a pre-dried film, and then, the other article may be arranged on the pre-dried film to heat the pre-dried film at a temperature of 210 to 400° C., preferably at a temperature of 210 to 300° C., to sinter a metal in the metal paste to form a metal bonding layer to bond the articles to each other with the metal bonding layer. Furthermore, while the heating of the bonding material (or the pre-dried film) is carried out, a pressure may be applied between the articles although it is not required to apply the pressure between the articles. The articles can be bonded to each other even if the heating of the bonding material (or the pre-dried film) is carried out at the atmosphere although they can be bonded to each other even if the heating is carried out at an inert atmosphere, such as an atmosphere of nitrogen.
- If the above-described preferred embodiment of a bonding material according to the present invention is used for bonding an Si chip to a metal substrate, such as a copper substrate, it is possible to easily print the bonding material on the metal substrate, and it is possible to prevent voids from being generated in a metal bonding layer and on the boundary between the metal bonding layer and the Si chip to satisfactorily bond them to each other even if no pre-burning is carried out. In particular, even if the area of the bonded surface of the Si chip to the metal substrate is large (when the area of the bonded surface is preferably 25 mm2 or less, more preferably 1 to 25 mm2 and most preferably 4 to 25 mm2), it is possible to satisfactorily bond them to each other.
- Examples of a bonding material and a bonding method using the same according to the present invention will be described below in detail.
- First, 3400 g of water was put in a 5 L reaction vessel, and nitrogen gas was caused to flow at a flow rate of 3000 mL/min. for 600 seconds into water in the reaction vessel from a nozzle, which was provided on the lower portion of the reaction vessel, to remove dissolved oxygen. Then, nitrogen gas was fed into the reaction vessel at a flow rate of 3000 mL/min. from the upper portion of the reaction vessel to allow the atmosphere in the reaction vessel to be an atmosphere of nitrogen, and the temperature of water in the reaction vessel was adjusted to be 60° C. while stirring is carried out by means of a stirring rod with an impeller, the stirring rod being provided in the reaction vessel. After 7 g of ammonia water containing 28% by weight of ammonia was added to water in the reaction vessel, it is stirred for 1 minute to obtain a uniform solution. Then, as an organic compound, 45.5 g (a molar ratio of 1.98 to silver) of hexanoic acid (produced by Wako Pure Chemical Industries, Ltd.), which was a saturated fatty acid, was added to the solution in the reaction vessel to be dissolved therein by stirring for 4 minutes. Then, 50% by weight of hydrazine hydrate (produced by Otsuka Chemical Co., Ltd.) 23.9 g (an equivalent of 4.82 with respect to silver) was added thereto as a reducing agent to obtain a reducing agent solution.
- An aqueous silver nitrate solution was prepared as an aqueous silver salt solution by dissolving 33.8 g of silver nitrate crystal (produced by Wako Pure Chemical Industries, Ltd.) in 180 g of water. The temperature of the aqueous silver salt solution was adjusted to be 60° C. Then, 0.00008 g (1 ppm of copper with respect to silver) of copper nitrate tri-hydrate (produced by Wako Pure Chemical Industries, Ltd.) was added to the aqueous silver salt solution. Furthermore, the addition of copper nitrate tri-hydrate was carried out so that a solution prepared by diluting an aqueous copper nitrate tri-hydrate solution at a high concentration to a certain extent was added to cause the amount of copper to be a target amount.
- Then, the above-described aqueous silver salt solution was added to the above-described reducing agent solution at a stroke to start a reduction while the solution was stirred. After about 10 seconds from the starting of the reduction, the variation in color of a slurry being a reaction solution was completed. The aging of the solution was carried out for 10 minutes while the solution was stirred, and thereafter, the stirring of the solution was stopped. Then, the solid-liquid separation of the solution was carried out by suction filtration to obtain a solid body. The solid body was washed with pure water to be dried at 40° C. for 12 hours to obtain a dried powder of fine silver particles (silver nanoparticles) (coated with hexanoic acid). Furthermore, the percentage of silver in the fine silver particles was calculated to be 97% by weight on the basis of the weight of the fine silver particles after hexanoic acid was removed by heating. The average primary particle diameter of the fine silver particles was obtained to be 17 nm by means of a transmission electron microscope (TEM).
- Then, 180.0 g of pure water was put in a 300 mL beaker, and 33.6 g of silver nitrate (produced by Toyo Kagaku Inc.) was added thereto to be dissolved to prepare an aqueous silver nitrate solution as a raw material solution.
- Then, 3322.0 g of pure water was put in a 5 L beaker, and the temperature thereof was raised to 40° C. while dissolved oxygen was removed by blowing nitrogen gas into the pure water for 30 minutes. To this pure water, 44.8 g of sorbic acid (produced by Wako Pure Chemical Industries, Ltd.) was added as an organic compound (for coating fine silver particles), and thereafter, 7.1 g of 28% ammonia water (produced by Wako Pure Chemical Industries, Ltd.) was added thereto as a stabilizing agent.
- While the aqueous solution was stirred after the ammonia water was added, 14.91 g of hydrous hydrazine having a purity of 80% (produced by Otsuka Chemical Co., Ltd.) was added thereto as a reducing agent after 5 minutes from the addition of the ammonia water (from the reaction initiation), to prepare an aqueous reducing agent containing solution as a reducing solution. After 9 minutes from the reaction initiation, the raw material solution (aqueous silver nitrate solution), the temperature of which was adjusted to be 40° C., was added to the reducing solution (aqueous reducing agent containing solution) at a stroke to be allowed to react with the reducing solution, and stirred for 80 minutes. Thereafter, the temperature of the solution was raised at a temperature raising rate of 1° C./min. from 40° C. to ° C., and the stirring of the solution was stopped.
- After the aggregates of the fine silver particles (silver nanoparticles) coated with sorbic acid were thus formed, a liquid containing the aggregates of the fine silver particles was filtered by a No. 5C filter paper, and then, a recovery obtained by filtration was washed with pure water to obtain the aggregates of the fine silver particles. The aggregates of the fine silver particles were dried at 80° C. for 12 hours in a vacuum dryer to obtain a dried powder of the aggregates of the fine silver particles. The dried powder of the aggregates of the fine silver particles thus obtained was broken to adjust the size of the secondary aggregates thereof. Furthermore, the average primary particle diameter of the fine silver particles was obtained by means of a scanning electron microscope (SEM). As a result, the average primary particle diameter was 85 nm.
- Then, there were mixed 14.5 g of the dried powder of the fine silver particles (first silver particles (small particles)) (coated with hexanoic acid) having the average primary particle diameter of 17 nm, 7.5 g of the dried powder of the fine silver particles (second silver particles (medium particles)) (coated with sorbic acid) having the average primary particle diameter of 85 nm, 70 g of silver particles (coated with oleic acid) (AG2-1C produced by DOWA ELECTRONICS MATERIALS CO., LTD.) having a micron size (an average primary particle diameter of 0.3 μm obtained from the SEM image thereof) serving as the third silver particles (large particles), 0.5 g of butoxyethoxy acetic acid (BEA) (produced by Tokyo Chemical Industry Co., Ltd.) serving as a first dispersant (carboxylic acid dispersant), 0.05 g of a phosphate ester dispersant (SOLPLUS D540 produced by The Lubrizol Corporation) serving as a second dispersant, 2.45 g of 1-decanol (produced by Wako Pure Chemical Industries, Ltd.) serving as a first solvent, 1.5 g of octanediol (2-ethyl-1,3-hexanediol produced by Kyowa Hakko Chemical Co., Ltd.) serving as a second solvent, and 3.5 g of 2-methyl-butane-1,3,4-triol (isoprene triol B (IPTL-B)) (produced by Nippon Terpene Chemicals, Inc.) serving as a third solvent. The mixture thus obtained was kneaded, and the kneaded mixture was caused to pass through a three-roll mill to obtain a bonding material of a silver paste. Furthermore, the total content of the first, second and third silver particles in the bonding material (silver paste) was 92% by weight, and the weight ratio (first silver particles:second silver particles:third silver particles) of the first, second and third silver particles was 16:8:76.
- The viscosity of this bonding material (silver paste) was obtained by a rheometer (viscoelasticity measuring apparatus) (HAAKE RheoStress 600 produced by Thermo Scientific, Inc.), using a cone having a cone diameter of 35 mm and a cone angle of 2°). As a result, the viscosity measured at 25° C. was 309 (Pa·s) at 2 s−1 and 26 (Pa·s) at 20 s−1. The ratio (thixotropic ratio) Ti of the viscosity at 2 s−1 to the viscosity at 20 s−1 (viscosity at 2 s−1/viscosity at 20 s−1) was 11.7 when the viscosity was measure at 25° C., and the printability (print quality) of the bonding material (silver paste) was good.
- Then, there are prepared a pure copper substrate and a substrate prepared by plating one surface (a surface to be bonded) of a pure copper substrate with silver, and there are prepared two Si chips, the back (a surface to be bonded) of each of the Si chips being plated with silver (and having an area of about 18 mm2). Then, a metal mask having a thickness of 50 μm was arranged on each of the substrates to apply the above-described bonding material (silver paste) on each of the substrates so as to have the same size as the area of the back of the Si chip and a thickness of 50 μm by means of a metal squeegee. Then, after each of the Si chips was arranged on the bonding material, an inert oven was used for raising the temperature of the bonding material at a temperature raising rate of 0.05° C./s from 25° C. to 250° C. in an atmosphere of nitrogen to hold the temperature thereof at 250° C. for 60 minutes to burn the bonding material to sinter silver in the silver paste to form a silver bonding layer to bond the Si chip to each of the substrates with the silver bonding layer.
- With respect to each of two bonded articles thus obtained, the presence of voids in the silver bonding layer (in the interior of the silver bonding layer and on the boundaries between the silver bonding layer and the substrate and between the silver bonding layer and the Si chip) was observed from an image (C-SAM image) obtained by means of an ultrasonic microscope (C-SAM) (D9500 produced by SONOSCAN, INC.). As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles. Furthermore, it was determined that there were no voids so that the Si chip was satisfactorily bonded to the substrate if the whole surface of the C-SAM image was black, that there was voids in the central portion so that the bonded state in the central portion was not good if the central portion of the C-SAM image was white, and that there were voids in the whole surface so that the bonded state was not good (or the Si chip was peeled off from the substrate) if the whole surface of the C-SAM image was while.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 14.5 g, 0 g and 77.5 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 16:0:84). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 712 (Pa·s) at 2 s−1 and 49 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 14.6, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 19.78 g, 0 g and 72.22 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 22:0:78). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 1034 (Pa·s) at 2 s−1 and 47 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 22.0, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 14.5 g, 12.5 g and 65.0 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 16:14:70). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 357 (Pa·s) at 2 s−1 and 22 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 16.0, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 14.75 g, 14.75 g and 62.5 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 16:16:68). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 287 (Pa·s) at 2 s−1 and 25 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 11.6, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 12.5 g, 7.5 g and 72.0 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 14:8:78). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 211 (Pa·s) at 2 s−1 and 17 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 12.4, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 7.25 g, 7.25 g and 77.5 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 8:8:84). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 118 (Pa·s) at 2 s−1 and 15 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 8.1, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 14.5 g, 26.8 g and 50.7 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 16:29:55). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 28 (Pa·s) at 2 s−1 and 9 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 3.0, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate, and the Si chip was satisfactorily bonded to the substrate thereof. However, voids were observed in the bonded article having the Si chip bonded to the copper substrate which was not plated with silver, and the Si chip was not satisfactorily bonded to the substrate thereof.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 14.5 g, 17.5 g and 60.0 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 16:19:65). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 96 (Pa·s) at 2 s−1 and 20 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 4.8, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate, and the Si chip was satisfactorily bonded to the substrate thereof. However, voids were observed in the bonded article having the Si chip bonded to the copper substrate which was not plated with silver, and the Si chip was not satisfactorily bonded to the substrate thereof.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 7.5 g, 9.75 g and 74.75 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 8:11:81). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 86 (Pa·s) at 2 s−1 and 13 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 6.6, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 4.5 g, 7.5 g and 80.0 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 5:8:87). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 62 (Pa·s) at 2 s−1 and 13 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 4.7, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 27.6 g, 0 g and 64.4 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 30:0:70). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 2135 (Pa·s) at 2 s−1 and 127 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 16.9, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 27.6 g, 18.4 g and 46.0 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 30:20:50). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 2186 (Pa·s) at 2 s−1 and 96 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 22.8, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate, and the Si chip was satisfactorily bonded to the substrate thereof. However, voids were observed in the bonded article having the Si chip bonded to the copper substrate which was not plated with silver, and the Si chip was not satisfactorily bonded to the substrate thereof.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 2.3 g, 2.3 g and 87.4 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 2.5:2.5:95). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 37 (Pa·s) at 2 s−1 and 11 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 3.4, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in each of the two bonded articles, and the Si chip was satisfactorily bonded to the substrate in each of the two bonded articles.
- A bonding material was produced by the same method as that in Example 1, except that silver particles (coated with sorbic acid) (Superfine Silver Powder-2 produced by DOWA ELECTRONICS MATERIALS CO., LTD.) having a micron size (an average primary particle diameter of 0.3 μm obtained from the SEM image thereof) was used as the third silver particles (large particles) in place of the silver particles (coated with oleic acid) (AG2-1C produced by DOWA ELECTRONICS MATERIALS CO., LTD.) having the micron size (the average primary particle diameter of 0.3 μm obtained from the SEM image thereof). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 826 (Pa·s) at 2 s−1 and (Pa·s) at 20 s−1. The thixotropic ratio Ti was 12.0, and the printability (print quality) of the bonding material (silver paste) was good.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 4.5 g, 17.5 g and 70.0 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 5:19:76). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 20 (Pa·s) at 2 s−1 and 8 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 2.4, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, voids were observed in each of the two bonded articles, and the Si chip was not satisfactorily bonded to the substrate in each of the two bonded articles.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 9.2 g, 27.6 g and 55.2 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 10:30:60). The viscosity of the bonding material was obtained by the same method as that in Example 1. As a result, the viscosity measured at 25° C. was 13 (Pa·s) at 2 s−1 and 7 (Pa·s) at 20 s−1. The thixotropic ratio Ti was 1.7, and the printability (print quality) of the bonding material (silver paste) was good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, voids were observed in each of the two bonded articles, and the Si chip was not satisfactorily bonded to the substrate in each of the two bonded articles.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 27.6 g, 27.6 g and 36.8 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 30:30:40). The viscosity of the bonding material was attempted to be obtained by the same method as that in Example 1. However, it was not possible to measure the viscosity thereof since it exceeds the measurement upper limit, and the printability (print quality) of the bonding material (silver paste) was not good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate, and the Si chip was satisfactorily bonded to the substrate thereof. However, voids were observed in the bonded article having the Si chip bonded to the copper substrate which was not plated with silver, and the Si chip was not satisfactorily bonded to the substrate thereof.
- A bonding material was produced by the same method as that in Example 1, except that the amounts of the first, second and third silver particles in the bonding material (silver paste) were 46.0 g, 9.2 g and 36.8 g, respectively (the weight ratio of the first, second and third silver particles (first silver particles:second silver particles:third silver particles) was 50:10:40). The viscosity of the bonding material was attempted to be obtained by the same method as that in Example 1. However, it was not possible to measure the viscosity thereof since it exceeds the measurement upper limit, and the printability (print quality) of the bonding material (silver paste) was not good. The bonding material thus obtained was used for producing two bonded articles by the same method as that in Example 1, and the presence of voids in the silver bonding layer was observed by the same method as that in Example 1. As a result, no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate, and the Si chip was satisfactorily bonded to the substrate thereof. However, voids were observed in the bonded article having the Si chip bonded to the copper substrate which was not plated with silver, and the Si chip was not satisfactorily bonded to the substrate thereof.
- The producing conditions and characteristics of the bonding materials in these examples and comparative examples are shown in Tables 1-2. In Table 1, “o” is shown if no voids were observed in each of the bonded articles, “x” is shown if voids were observed in each of the bonded articles, and “Δ” is shown if voids were observed in the bonded article having the Si chip to the copper substrate which was not plated with silver although no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate.
-
TABLE 1 Silver Particles Weight Percentage in Silver Paste in Silver Particles (% by weight) (% by weight) Large Small Medium Small Medium Par- Par- Par- Large Particles ticles Particles ticles ticles Particles Ex. 1 14.5 7.5 70 16 8 76 Ex. 2 14.5 0 77.5 16 0 84 Ex. 3 19.78 0 72.22 22 0 78 Ex. 4 14.5 12.5 65 16 14 71 Ex. 5 14.75 14.75 62.5 16 16 68 Ex. 6 12.5 7.5 72 14 8 78 Ex. 7 7.25 7.25 77.5 8 8 84 Ex. 8 14.5 26.8 50.7 16 29 55 Ex. 9 14.5 17.5 60 16 19 65 Ex. 10 7.5 9.75 74.75 8 11 81 Ex. 11 4.5 7.5 80 5 8 87 Ex. 12 27.6 0 64.4 30 0 70 Ex. 13 27.6 18.4 46 30 20 50 Ex. 14 2.3 2.3 87.4 2.5 2.5 95 Ex. 15 14.5 7.5 70 16 8 76 Comp. 1 4.5 17.5 70 5 19 76 Comp. 2 9.2 27.6 55.2 10 30 60 Comp. 3 27.6 27.6 36.8 30 30 40 Comp. 4 46 9.2 36.8 50 10 40 -
TABLE 2 Viscosity (Pa · s) 2 s−1 20 s−1 Ti Voids Ex. 1 309 26 11.7 ∘ Ex. 2 712 49 14.6 ∘ Ex. 3 1034 47 22.0 ∘ Ex. 4 357 22 16.0 ∘ Ex. 5 287 25 11.6 ∘ Ex. 6 211 17 12.4 ∘ Ex. 7 118 15 8.1 ∘ Ex. 8 28 9 3.0 Δ Ex. 9 96 20 4.8 Δ Ex. 10 86 13 6.6 ∘ Ex. 11 62 13 4.7 ∘ Ex. 12 2135 127 16.9 ∘ Ex. 13 2186 96 22.8 Δ Ex. 14 37 11 3.4 ∘ Ex. 15 826 69 12.0 Comp. 1 20 8 2.4 x Comp. 2 13 7 1.7 x Comp. 3 — — — Δ Comp. 4 — — — Δ - As can be seen from these results, in all of the bonding materials in Examples 1-15, the weight percentages of the first silver particles (small particles), second silver particles (medium particles) and third silver particles (large particles) are 1.4 to 49% by weight, 36% by weight or less, and 50 to 95% by weight, respectively, with respect to the total 100% by weight of the silver particles, and the weight ratio of the first silver particles (small particles) to the second silver particles (medium particles) is 14/36 or more. On the other hand, in all of the bonding materials in Comparative Example 1-4, the weight percentages and the weight ratio are not in such ranges. That is, in all of the bonding materials in Examples 1-15, the weight percentages (% by weight) of the first silver particles (small particles), second silver particles (medium particles) and third silver particles (large particles) are in a pentagonal region (containing the outline of the pentagonal region) obtained by connecting a point a (49, 1, 50), a point b (14, 36, 50), a point c (1.4, 3.6, 95), a point d (5, 0, 95) and a point e (49, 0, 51) by straight lines in this order, the points a, b, c, d and e being arranged on the coordinates of a triangle (triangular coordinates) shown in
FIG. 1 . On the other hand, in all of the bonding materials in Comparative Example 1-4, the weight percentages (% by weight) of the small, medium and large particles are out of the pentagonal region. - Furthermore, as shown in Tables 1 and 2, in Examples 8, 9 and 13 wherein the weight percentage of the second silver particles (medium particles) in the silver particles of the bonding material is 19% by weight or more, voids were observed in the bonded article having the Si chip bonded to the copper substrate which was not plated with silver although no voids were observed in the bonded article having the Si chip bonded to the silver-plated copper substrate. Therefore, it can be seen that the weight percentage of the second silver particles (medium particles) in the silver particles of the bonding material is preferably less than 19% by weight. In addition, it can be seen from the comparison of Example 2 with Examples 1, 4, 5, 8 and 9 that the weight percentage of the third silver particles (large particles) is decreased to lower the viscosity of the bonding material if the second silver particles (medium particles) are added to the bonding material. If the viscosity of the bonding material is thus lowered, the printability of the bonding material is caused to be good, so that the handling of the bonding material is caused to be good. For that reason, the second silver particles (medium particles) are preferably added to the bonding material. Moreover, it can be seen from the comparison of Example 12 with Example 13 that the viscosity of the bonding material is not lowered even if the second silver particles (medium particles) to the bonding material when the weight percentage of the first silver particles (small particles) in the silver particles of the bonding material is increased to be 30% by weight. Furthermore, it can be seen from the comparison of Example 1 with Example 15 that the viscosity of the bonding material is increased if the second silver particles (medium particles) and the third silver particles (large particles) are coated with an organic compound having the same carbon number (sorbic acid having a carbon number of 6) as shown in Example 15. For that reason, the carbon number of the organic compound coating the third silver particles (large particles) is preferably larger than the carbon number of the organic compound coating the second silver particles (medium particles) (the organic compound coating the third silver particles preferably has a longer main chain in its molecule than that of the organic compound coating the second silver particles).
Claims (19)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016194332 | 2016-09-30 | ||
JP2016-194332 | 2016-09-30 | ||
JP2017183123A JP7007140B2 (en) | 2016-09-30 | 2017-09-25 | Joining material and joining method using it |
JP2017-183123 | 2017-09-25 | ||
PCT/JP2017/034837 WO2018062220A1 (en) | 2016-09-30 | 2017-09-27 | Bonding material and bonding method using same |
Publications (2)
Publication Number | Publication Date |
---|---|
US20190283129A1 true US20190283129A1 (en) | 2019-09-19 |
US12048964B2 US12048964B2 (en) | 2024-07-30 |
Family
ID=61907522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/335,361 Active 2038-08-05 US12048964B2 (en) | 2016-09-30 | 2017-09-27 | Bonding material and bonding method using same |
Country Status (6)
Country | Link |
---|---|
US (1) | US12048964B2 (en) |
EP (1) | EP3505272B1 (en) |
JP (1) | JP7007140B2 (en) |
CN (1) | CN109789482B (en) |
PH (1) | PH12019500688A1 (en) |
TW (1) | TWI716639B (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3113774A1 (en) * | 2020-09-03 | 2022-03-04 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for interconnecting components of an electronic system by sintering |
FR3113773A1 (en) * | 2020-09-03 | 2022-03-04 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for interconnecting components of an electronic system by sintering |
US20220331878A1 (en) * | 2021-04-16 | 2022-10-20 | MetalPrinting Inc. | Three-Dimensional Printing Head Device and Ink |
US11515281B2 (en) | 2019-04-22 | 2022-11-29 | Panasonic Holdings Corporation | Bonded structure and bonding material |
US20240009731A1 (en) * | 2021-04-25 | 2024-01-11 | Solderwell Microelectronic Packaging Materials Co., Ltd | Nano silver paste and preparation method thereof |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6958434B2 (en) * | 2018-03-06 | 2021-11-02 | 三菱マテリアル株式会社 | Metal particle agglomerates and a method for producing the same, and a paste-like metal particle agglomerate composition and a method for producing a bonded body using the same. |
JP7155654B2 (en) * | 2018-06-22 | 2022-10-19 | 三菱マテリアル株式会社 | Method for manufacturing conjugate |
JP2020070461A (en) * | 2018-10-30 | 2020-05-07 | 古河電気工業株式会社 | Metal particle mixed dispersion, production method of metal particle mixed dispersion, polymer attached metal particles used in metal particle mixed dispersion, and semiconductor device formed with metal particle dispersion |
JP2020164894A (en) * | 2019-03-28 | 2020-10-08 | Dowaエレクトロニクス株式会社 | Joint material, manufacturing method of joint material, joining method, and semiconductor device |
JP2021102801A (en) * | 2019-12-25 | 2021-07-15 | 東洋インキScホールディングス株式会社 | Joint material, and article |
EP4083129A1 (en) | 2019-12-27 | 2022-11-02 | Sumitomo Bakelite Co.Ltd. | Solid resin molding material, molded article and method for producing molded article |
EP4295975A1 (en) * | 2021-02-22 | 2023-12-27 | Mitsubishi Materials Corporation | Bonding paste, bonded layer, bonded body, and method for producing bonded body |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002035554A1 (en) | 2000-10-25 | 2002-05-02 | Harima Chemicals, Inc. | Electroconductive metal paste and method for production thereof |
CN1737072B (en) * | 2004-08-18 | 2011-06-08 | 播磨化成株式会社 | Conductive adhesive agent and process for manufacturing article using the conductive adhesive agent |
JP4872663B2 (en) | 2006-12-28 | 2012-02-08 | 株式会社日立製作所 | Joining material and joining method |
JP5688895B2 (en) * | 2008-12-26 | 2015-03-25 | Dowaエレクトロニクス株式会社 | Fine silver particle powder and silver paste using the powder |
JP2011021255A (en) | 2009-07-16 | 2011-02-03 | Applied Nanoparticle Laboratory Corp | Three-metallic-component type composite nanometallic paste, method of bonding, and electronic component |
JP5824201B2 (en) | 2009-09-11 | 2015-11-25 | Dowaエレクトロニクス株式会社 | Bonding material and bonding method using the same |
JP5455050B2 (en) | 2010-02-23 | 2014-03-26 | パナソニック株式会社 | Lighting control terminal and lighting control system |
JP5620122B2 (en) | 2010-02-24 | 2014-11-05 | 地方独立行政法人 大阪市立工業研究所 | Joining material and joining method |
HUE039370T2 (en) * | 2010-03-15 | 2018-12-28 | Dowa Electronics Materials Co Ltd | Bonding material and bonding method using same |
WO2011155055A1 (en) * | 2010-06-11 | 2011-12-15 | Dowaエレクトロニクス株式会社 | Low-temperature-sintering bonding material and bonding method using the bonding material |
KR102188054B1 (en) | 2010-11-22 | 2020-12-07 | 도와 일렉트로닉스 가부시키가이샤 | Binding material, binding body, and binding method |
JP5790436B2 (en) | 2011-11-18 | 2015-10-07 | いすゞ自動車株式会社 | Combustion injection method for internal combustion engine and internal combustion engine |
US9533380B2 (en) * | 2012-01-20 | 2017-01-03 | Dowa Electronics Materials Co., Ltd. | Bonding material and bonding method in which said bonding material is used |
US10308856B1 (en) * | 2013-03-15 | 2019-06-04 | The Research Foundation For The State University Of New York | Pastes for thermal, electrical and mechanical bonding |
JP6118192B2 (en) * | 2013-06-21 | 2017-04-19 | Dowaエレクトロニクス株式会社 | Bonding material and bonding method using the same |
TW201611198A (en) * | 2014-04-11 | 2016-03-16 | 阿爾發金屬公司 | Low pressure sintering powder |
US10201852B2 (en) * | 2014-06-16 | 2019-02-12 | Osaka University | Silver particle synthesizing method, silver particles, conductive paste producing method, and conductive paste |
WO2016031860A1 (en) * | 2014-08-28 | 2016-03-03 | 石原産業株式会社 | Metallic copper particles, and production method therefor |
JP6380792B2 (en) * | 2014-09-04 | 2018-08-29 | 日立化成株式会社 | Silver paste, semiconductor device using the same, and method for producing silver paste |
JP6849374B2 (en) * | 2016-10-06 | 2021-03-24 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company | Conductive paste for joining |
-
2017
- 2017-09-25 JP JP2017183123A patent/JP7007140B2/en active Active
- 2017-09-27 CN CN201780060535.XA patent/CN109789482B/en active Active
- 2017-09-27 EP EP17856169.2A patent/EP3505272B1/en active Active
- 2017-09-27 US US16/335,361 patent/US12048964B2/en active Active
- 2017-09-28 TW TW106133399A patent/TWI716639B/en active
-
2019
- 2019-03-29 PH PH12019500688A patent/PH12019500688A1/en unknown
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11515281B2 (en) | 2019-04-22 | 2022-11-29 | Panasonic Holdings Corporation | Bonded structure and bonding material |
FR3113774A1 (en) * | 2020-09-03 | 2022-03-04 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for interconnecting components of an electronic system by sintering |
FR3113773A1 (en) * | 2020-09-03 | 2022-03-04 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for interconnecting components of an electronic system by sintering |
EP3964306A1 (en) | 2020-09-03 | 2022-03-09 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Method for interconnection of components of an electronic system by sintering |
EP3964305A1 (en) | 2020-09-03 | 2022-03-09 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Method for interconnection of components of an electronic system by sintering |
US11876002B2 (en) | 2020-09-03 | 2024-01-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for interconnecting components of an electronic system by sintering |
US11919083B2 (en) | 2020-09-03 | 2024-03-05 | Commissariat A L'energie Atomique Et Aux Energies | Method for interconnecting components of an electronic system by sintering |
US20220331878A1 (en) * | 2021-04-16 | 2022-10-20 | MetalPrinting Inc. | Three-Dimensional Printing Head Device and Ink |
US20240009731A1 (en) * | 2021-04-25 | 2024-01-11 | Solderwell Microelectronic Packaging Materials Co., Ltd | Nano silver paste and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
EP3505272B1 (en) | 2023-08-16 |
CN109789482B (en) | 2021-08-24 |
EP3505272A4 (en) | 2020-01-08 |
US12048964B2 (en) | 2024-07-30 |
TWI716639B (en) | 2021-01-21 |
JP7007140B2 (en) | 2022-01-24 |
TW201830411A (en) | 2018-08-16 |
CN109789482A (en) | 2019-05-21 |
JP2018059192A (en) | 2018-04-12 |
PH12019500688A1 (en) | 2019-11-04 |
EP3505272A1 (en) | 2019-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US12048964B2 (en) | Bonding material and bonding method using same | |
EP2455179B1 (en) | Bonding material and bonding method each using metal nanoparticles | |
WO2021044817A1 (en) | Silver particles | |
JP6962318B2 (en) | Conductive adhesive | |
US20200035637A1 (en) | Bonding material and bonded product using same | |
JP7170968B2 (en) | Joining method using conductive adhesive | |
US10821558B2 (en) | Bonding material and bonding method using same | |
KR102354209B1 (en) | Bonding material and bonding method using the same | |
WO2018124263A1 (en) | Bonding material, and bonding method using same | |
WO2021125277A1 (en) | Silver paste, and method for producing joined article | |
KR20160120716A (en) | Method for producing metal nanoparticles | |
JP6463195B2 (en) | Nickel particle composition, bonding material, and bonding method using the same | |
WO2016035314A1 (en) | Bonding material and bonding method using same | |
JP2021138991A (en) | Bonding material, method for producing bonding material, and bonding method | |
JPWO2020050194A1 (en) | Silver nanoparticles | |
JP2021025117A (en) | Conductive adhesive | |
WO2018221594A1 (en) | Joining member, joining body, and method of joining | |
JP6338419B2 (en) | Metal particle composition, bonding material, and bonding method using the same | |
JP2022049054A (en) | Method of making electric conductor, metal paste and electric conductor | |
WO2023190593A1 (en) | Paste composition and composite | |
JP2021038427A (en) | Sintered compact of silver particle | |
JP2021188071A (en) | Joint material, method for producing joint material and joining method | |
JP2023092937A (en) | Silver paste and method for manufacturing joined body |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: DOWA ELECTRONICS MATERIALS CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ENDOH, KEIICHI;KANASUGI, MINAMI;FUJIMOTO, HIDEYUKI;AND OTHERS;SIGNING DATES FROM 20190125 TO 20190129;REEL/FRAME:048659/0233 |
|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: ADVISORY ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE AFTER FINAL ACTION FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: ADVISORY ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
ZAAA | Notice of allowance and fees due |
Free format text: ORIGINAL CODE: NOA |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NOTICE OF ALLOWANCE MAILED -- APPLICATION RECEIVED IN OFFICE OF PUBLICATIONS |
|
ZAAB | Notice of allowance mailed |
Free format text: ORIGINAL CODE: MN/=. |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: PUBLICATIONS -- ISSUE FEE PAYMENT RECEIVED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: PUBLICATIONS -- ISSUE FEE PAYMENT VERIFIED |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |