US20190051486A1 - Positive and negative ion source based on radio-frequency inductively coupled discharge - Google Patents
Positive and negative ion source based on radio-frequency inductively coupled discharge Download PDFInfo
- Publication number
- US20190051486A1 US20190051486A1 US15/725,045 US201715725045A US2019051486A1 US 20190051486 A1 US20190051486 A1 US 20190051486A1 US 201715725045 A US201715725045 A US 201715725045A US 2019051486 A1 US2019051486 A1 US 2019051486A1
- Authority
- US
- United States
- Prior art keywords
- positive
- extraction gate
- ion extraction
- negative ion
- cover plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000605 extraction Methods 0.000 claims abstract description 91
- 230000005540 biological transmission Effects 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 abstract description 116
- 238000013021 overheating Methods 0.000 abstract description 9
- 239000002245 particle Substances 0.000 abstract description 6
- 238000011109 contamination Methods 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000010884 ion-beam technique Methods 0.000 description 6
- 230000005672 electromagnetic field Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000010885 neutral beam injection Methods 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
- H01J27/205—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers with electrons, e.g. electron impact ionisation, electron attachment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/0817—Microwaves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/082—Electron beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0822—Multiple sources
- H01J2237/0825—Multiple sources for producing different ions simultaneously
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Definitions
- the present invention relates to the technical field of an ion source generation apparatus and in particular to a positive and negative ion source based on radio-frequency inductively coupled discharge.
- the ion source has been widely applied in aspects such as injection into solid surfaces, micro-machining, material surface modification and neutral beam injection, and has become an indispensable apparatus in many basic research fields, for example, studies of atomic physics, plasma chemistry, nuclear physics, material modification, etc.
- Ion beams extracted from the ion source have become an indispensable machining process and manufacturing approach in fields such as high-energy physics, microelectronics, photoelectronics, metallurgy, aerospace, medical instruments, mechanical manufacturing and heating for nuclear fusion.
- backstreaming of charged particles occurs during the extraction from a pure positive ion source or a pure negative ion source.
- the backstreaming of the charged particles will result in sputtering or overheating of the backplane opposite to the extraction gate in the plasma generation region.
- a negative DC voltage is applied to the positive ion source extraction gate, the positive ions are extracted while the electrons and negative ions are repelled; and the electrons and negative ions are accelerated to high energy where they pass through the plasma generation region and hit onto the backplane to result in overheating and sputtering of the backplane.
- the negative ions and electrons are extracted while positive ions are repelled; and the positive ions are accelerated to high energy where they pass through the plasma generation region and hit onto the backplane to result in sputtering and overheating of the backplane.
- the backplane suffering from long-term sputtering and overheating will have greatly decreased service life, and particles sputtered from the backplane will contaminate the plasma or even the ion source.
- An objective of the present invention is to provide a positive and negative ion source based on radio-frequency inductively coupled discharge to solve the problems in the prior art so that the positive ions and the electrons and negative ions can be extracted simultaneously, and the problems of contamination of the ion source by particles sputtered from the backplane and overheating of the backplane are thus solved.
- the present invention provides the following technical solutions.
- the present invention provides a positive and negative ion source based on radio-frequency inductively coupled discharge, including a tube, a middle portion of which is communicated with an intake pipe; discharge coils electrically connected to a matched network and a radio-frequency power supply successively are wound on the tube; one end of the tube is connected to a first cover plate in a sealed manner, and the first cover plate is connected with a positive ion extraction gate via an insulating medium; the positive ion extraction gate is electrically connected to a negative pole of a DC power supply; the other end of the tube is connected to a second cover plate in a sealed manner, the second cover plate is connected to a third cover plate in a sealed manner via a sidewall, and the third cover plate is connected with a negative ion extraction gate via an insulating medium; and the negative ion extraction gate is electrically connected to a positive pole of the DC power supply.
- the positive ion extraction gate includes a first positive ion extraction gate and a second positive ion extraction gate which are successively arranged from inside out, the first positive ion extraction gate and the second positive ion extraction gate are each electrically connected to a negative pole of a DC power supply, and a negative voltage at the second positive ion extraction gate is higher than a negative voltage at the first positive ion extraction gate.
- a positive pole of the DC power supply to which the first positive ion extraction gate and the second positive ion extraction gate are electrically connected is grounded.
- the negative ion extraction gate includes a first negative ion extraction gate and a second negative ion extraction gate which are successively arranged from inside out, the first negative ion extraction gate and the second negative ion extraction gate are each electrically connected to a positive pole of a DC power supply, and a positive voltage at the second negative ion extraction gate is higher than a positive voltage at the first negative ion extraction gate.
- a negative pole of the DC power supply to which the first negative ion extraction gate and the second negative ion extraction gate are electrically connected is grounded.
- the matched network is electrically connected to one end of the discharge coils via a first coaxial transmission line whose middle portion is grounded, and the matched network is electrically connected to the other end of the discharge coils via a second coaxial transmission line.
- a flange joint for connecting a vacuometer and/or a detection system is provided on the second cover plate.
- a shield which is grounded, is sleeved on an outer side of the discharge coils.
- the positive and negative ion source further includes a support platform and a support frame, the support platform being connected to the insulating medium and the sidewall via the support frame.
- the positive and negative ion source further includes vacuum systems, the first cover plate and the third cover plate being each communicated with one vacuum system.
- the present invention has the following technical effects.
- the radio-frequency power supply outputs a radio-frequency power which is input to the discharge coils via the matched network.
- the radio-frequency power generates an electromagnetic field by the discharge coils, and the electromagnetic field ionizes the working gas in the tube to generate the plasma.
- a negative DC voltage is applied to the positive ion extraction gate on the positive ion extraction side to extract positive ion beams; and a positive DC voltage is applied to the negative ion extraction gate on the negative ion extraction side to extract the electrons or negative ion beams.
- the positive ions and the electrons and negative ions are extracted from two sides of the tube, respectively; the backplane is omitted, so that the problems of sputtering and overheating of the backplane during the extraction of pure positive ions and pure negative ions are solved, and meanwhile, the ion source constituted by the positive ions and the electrons and negative ions will not be contaminated by the sputtering.
- FIG. 1 is a structural diagram of a positive and negative ion source based on radio-frequency inductively coupled discharge according to the present invention
- An objective of the present invention is to provide a positive and negative ion source based on radio-frequency inductively coupled discharge to solve the problems in the prior art so that the positive ions and the electrons and negative ions can be extracted simultaneously, and the problems of contamination of the ion source by particles sputtered from the backplane and overheating of the backplane are thus solved.
- this embodiment provides a positive and negative ion source based on radio-frequency inductively coupled discharge, including a tube 1 .
- the tube 1 is preferably made of quartz.
- a middle portion of the tube 1 is communicated with an intake pipe 2 .
- Discharge coils 3 are wounded on the tube 1 .
- the discharge coils 3 are generally wounded on the tube 1 by a copper tube.
- a cooling liquid may be fed into the copper tube for cooling.
- a shield 19 is sleeved on an outer side of the discharge coils 3 .
- the shield 19 is required to be grounded.
- the shield 19 is preferably made of Al.
- the discharge coils 3 are electrically connected to a matched network 4 and a radio-frequency power supply 5 successively.
- An input end of the matched network 4 is electrically connected to an output end of the radio-frequency power supply 5 via a first coaxial transmission line 16
- an output end of the matched network 4 is electrically connected to an end of the discharge coils 3 .
- a middle portion of the first coaxial transmission line 16 is grounded.
- the output end of the matched network 4 is also electrically connected to the other end of the discharge coils 3 via a second coaxial transmission line 17 .
- the matched network 4 is used for adjusting the impedance characteristic of the discharge coils 3 so that the adsorption of the radio-frequency power by the plasma is maximized.
- the tube 1 is connected to a first cover plate 6 in a sealed manner.
- the sealing structure is preferably a loose nut or a loose flange.
- the first cover plate 6 is connected with a positive ion extraction gate via an insulating medium 7 (the insulating medium is preferably made of ceramic).
- the positive ion extraction gate includes a first positive ion extraction gate 12 and a second positive ion extraction gate 13 which are successively arranged from inside out.
- the first positive ion extraction gate 12 and the second positive ion extraction gate 13 are each electrically connected to a negative pole of a DC power supply 8 , and a positive pole of the DC power supply 8 to which the first positive ion extraction gate 12 and the second positive ion extraction gate 13 are electrically connected is grounded.
- the DC power supply 8 is used for providing a negative voltage to the first positive ion extraction gate 12 and the second positive ion extraction gate 13 , a negative voltage at the second positive ion extraction gate 13 is higher than a negative voltage at the first positive ion extraction gate 12 .
- the sealing structure is preferably a loose nut or a loose flange.
- a flange joint 18 for connecting a vacuometer, a detection system or a test system is provided on the second cover plate 9 .
- the second cover plate 9 is connected to a third cover plate 11 in a sealed manner via a sidewall 10
- the second cover plate 9 , the sidewall 10 and the third cover plate 11 are preferably connected by welding
- the third cover plate 11 is connected with a negative ion extraction gate via an insulating medium 7 .
- the negative ion extraction gate includes a first negative ion extraction gate 14 and a second negative ion extraction gate 15 which are successively arranged from inside out, and the first negative ion extraction gate 14 and the second negative ion extraction gate 15 are each electrically connected to a positive pole of a DC power supply 8 .
- a negative pole of the DC power supply 8 to which the first negative ion extraction gate 14 and the second negative ion extraction gate 15 are electrically connected is grounded.
- the DC power supply 8 is used for providing a positive voltage to the first negative ion extraction gate 14 and the second negative ion extraction gate 15 , a positive voltage at the second negative ion extraction gate 15 is higher than a positive voltage at the first negative ion extraction gate 14 .
- the first cover plate 6 , the second cover plate 9 , the third cover plate 11 and the sidewall 10 are preferably made of metal, for example, stainless steel.
- the positive and negative ion source based on radio-frequency inductively coupled discharge in this embodiment further includes a support platform 20 and a support frame 21 .
- the support platform 20 is arranged horizontally and the support frame 21 is arranged vertically.
- the support platform 20 supports the insulating medium 7 and the sidewall 10 via the support frame 21 so that the tube 1 is kept in the horizontal state.
- the positive ion extraction gate, the first cover plate 6 , the tube 1 , the second cover plate 9 , the sidewall 10 , the third cover plate 11 , the negative ion extraction gate and the insulating medium 7 form a vacuum chamber in this embodiment.
- the first cover plate 6 and the third cover plate 11 should be each communicated with a vacuum system when operating.
- the operating process of this embodiment is as follows.
- the vacuum chamber is vacuumized so that the pressure inside it is not higher than 10 ⁇ 4 Pa;
- a proper amount of a working gas for example, Ar, N 2 , O 2 , CF 4 , H 2 , D 2 , SF 6 , etc.
- a working gas for example, Ar, N 2 , O 2 , CF 4 , H 2 , D 2 , SF 6 , etc.
- the radio-frequency power supply 5 outputs a radio-frequency power which may be a radio-frequency power from 0 W to 1000 W at 13.56 MHz; the radio-frequency power is input to the discharge coils 3 via the matched network 4 ; and the radio-frequency power generates an electromagnetic field by the discharge coils 3 , and the electromagnetic field ionizes the working gas in the tube 1 to generate the plasma; and
- a negative DC voltage is applied to the positive ion extraction gate to extract positive ion beams; and a positive DC voltage is applied to the negative ion extraction gate to extract the electrons or negative ion beams (corresponding negative ions can be generated and extracted only when the working gas is an electronegative gas, for example, O 2 , H 2 , D 2 , CF 4 , SF 6 , etc.).
- the positive ions and the electrons and negative ions are extracted from two sides of the tube 1 , respectively; the backplane is omitted, so that the problems of sputtering and overheating of the backplane during the extraction of pure positive ions and pure negative ions are solved, and meanwhile, the ion source constituted by the positive ions and the electrons and negative ions will not be contaminated by the sputtering, so that the ion source becomes more “clean”.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
- This application claims priority to Chinese application number 201710687473.7, filed Aug. 11, 2017, with a title of POSITIVE AND NEGATIVE ION SOURCE BASED ON RADIO-FREQUENCY INDUCTIVELY COUPLED DISCHARGE. The above-mentioned patent application is incorporated herein by reference in its entirety.
- The present invention relates to the technical field of an ion source generation apparatus and in particular to a positive and negative ion source based on radio-frequency inductively coupled discharge.
- The ion source has been widely applied in aspects such as injection into solid surfaces, micro-machining, material surface modification and neutral beam injection, and has become an indispensable apparatus in many basic research fields, for example, studies of atomic physics, plasma chemistry, nuclear physics, material modification, etc. Ion beams extracted from the ion source have become an indispensable machining process and manufacturing approach in fields such as high-energy physics, microelectronics, photoelectronics, metallurgy, aerospace, medical instruments, mechanical manufacturing and heating for nuclear fusion.
- For a conventional ion source generation apparatus, during the extraction from a pure positive ion source or a pure negative ion source, backstreaming of charged particles occurs. The backstreaming of the charged particles will result in sputtering or overheating of the backplane opposite to the extraction gate in the plasma generation region. For example, when a negative DC voltage is applied to the positive ion source extraction gate, the positive ions are extracted while the electrons and negative ions are repelled; and the electrons and negative ions are accelerated to high energy where they pass through the plasma generation region and hit onto the backplane to result in overheating and sputtering of the backplane. Similarly, when a positive DC voltage is applied to the negative ion source extraction gate, the negative ions and electrons are extracted while positive ions are repelled; and the positive ions are accelerated to high energy where they pass through the plasma generation region and hit onto the backplane to result in sputtering and overheating of the backplane. The backplane suffering from long-term sputtering and overheating will have greatly decreased service life, and particles sputtered from the backplane will contaminate the plasma or even the ion source.
- An objective of the present invention is to provide a positive and negative ion source based on radio-frequency inductively coupled discharge to solve the problems in the prior art so that the positive ions and the electrons and negative ions can be extracted simultaneously, and the problems of contamination of the ion source by particles sputtered from the backplane and overheating of the backplane are thus solved.
- For this purpose, the present invention provides the following technical solutions.
- The present invention provides a positive and negative ion source based on radio-frequency inductively coupled discharge, including a tube, a middle portion of which is communicated with an intake pipe; discharge coils electrically connected to a matched network and a radio-frequency power supply successively are wound on the tube; one end of the tube is connected to a first cover plate in a sealed manner, and the first cover plate is connected with a positive ion extraction gate via an insulating medium; the positive ion extraction gate is electrically connected to a negative pole of a DC power supply; the other end of the tube is connected to a second cover plate in a sealed manner, the second cover plate is connected to a third cover plate in a sealed manner via a sidewall, and the third cover plate is connected with a negative ion extraction gate via an insulating medium; and the negative ion extraction gate is electrically connected to a positive pole of the DC power supply.
- Preferably, the positive ion extraction gate includes a first positive ion extraction gate and a second positive ion extraction gate which are successively arranged from inside out, the first positive ion extraction gate and the second positive ion extraction gate are each electrically connected to a negative pole of a DC power supply, and a negative voltage at the second positive ion extraction gate is higher than a negative voltage at the first positive ion extraction gate.
- Preferably, a positive pole of the DC power supply to which the first positive ion extraction gate and the second positive ion extraction gate are electrically connected is grounded.
- Preferably, the negative ion extraction gate includes a first negative ion extraction gate and a second negative ion extraction gate which are successively arranged from inside out, the first negative ion extraction gate and the second negative ion extraction gate are each electrically connected to a positive pole of a DC power supply, and a positive voltage at the second negative ion extraction gate is higher than a positive voltage at the first negative ion extraction gate.
- Preferably, a negative pole of the DC power supply to which the first negative ion extraction gate and the second negative ion extraction gate are electrically connected is grounded.
- Preferably, the matched network is electrically connected to one end of the discharge coils via a first coaxial transmission line whose middle portion is grounded, and the matched network is electrically connected to the other end of the discharge coils via a second coaxial transmission line.
- Preferably, a flange joint for connecting a vacuometer and/or a detection system is provided on the second cover plate.
- Preferably, a shield, which is grounded, is sleeved on an outer side of the discharge coils.
- Preferably, the positive and negative ion source further includes a support platform and a support frame, the support platform being connected to the insulating medium and the sidewall via the support frame.
- Preferably, the positive and negative ion source further includes vacuum systems, the first cover plate and the third cover plate being each communicated with one vacuum system.
- Compared with the prior art, the present invention has the following technical effects.
- The radio-frequency power supply outputs a radio-frequency power which is input to the discharge coils via the matched network. The radio-frequency power generates an electromagnetic field by the discharge coils, and the electromagnetic field ionizes the working gas in the tube to generate the plasma. After the generation of the plasma, a negative DC voltage is applied to the positive ion extraction gate on the positive ion extraction side to extract positive ion beams; and a positive DC voltage is applied to the negative ion extraction gate on the negative ion extraction side to extract the electrons or negative ion beams. When the electrons or negative ion beams move to between the second cover plate and the third cover plate from the tube, the energy of the high-energy electrons is decreased due to a certain distance of transport, and thus more low-energy electrons are formed and adsorbed by electronegative or electroneutral atoms or molecules to generate more negative ions. In this way, high-density negative ions are generated, which is more convenient for ion extraction. In the present invention, the positive ions and the electrons and negative ions are extracted from two sides of the tube, respectively; the backplane is omitted, so that the problems of sputtering and overheating of the backplane during the extraction of pure positive ions and pure negative ions are solved, and meanwhile, the ion source constituted by the positive ions and the electrons and negative ions will not be contaminated by the sputtering.
- To describe the technical solutions in the embodiments of the present invention or in the prior art more clearly, the accompanying drawings to be used in the description of the embodiments will be briefly described below. Apparently, the drawings described hereinafter are some of the embodiments of the present invention, and a person of ordinary skill in the art can obtain other drawings according to these drawings without paying any creative effort.
-
FIG. 1 is a structural diagram of a positive and negative ion source based on radio-frequency inductively coupled discharge according to the present invention, - in which:
-
- 1: tube;
- 2: intake pipe;
- 3: discharge coil;
- 4: matched network;
- 5: radio-frequency power supply;
- 6: first cover plate;
- 7: insulating medium;
- 8: DC power supply;
- 9: second cover plate;
- 10: sidewall;
- 11: third cover plate;
- 12: first positive ion extraction gate;
- 13: second positive ion extraction gate;
- 14: first negative ion extraction gate;
- 15: second ion extraction gate;
- 16: first coaxial transmission line;
- 17: second coaxial transmission line;
- 18: flange joint;
- 19: shield;
- 20 support platform;
- 21: support frame.
- The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the embodiments described herein are merely a part but not all of the embodiments of the present invention. All other embodiments obtained by a person of ordinary skill in the art without any creative effort on the basis of the embodiments in the present invention shall fall into the protection scope of the present invention.
- An objective of the present invention is to provide a positive and negative ion source based on radio-frequency inductively coupled discharge to solve the problems in the prior art so that the positive ions and the electrons and negative ions can be extracted simultaneously, and the problems of contamination of the ion source by particles sputtered from the backplane and overheating of the backplane are thus solved.
- To make the objectives, features and advantages of the present invention more obvious and comprehensible, the present invention will be further described below in detail by specific implementations with reference to the accompanying drawings.
- As shown in
FIG. 1 , this embodiment provides a positive and negative ion source based on radio-frequency inductively coupled discharge, including atube 1. Thetube 1 is preferably made of quartz. A middle portion of thetube 1 is communicated with an intake pipe 2. Discharge coils 3 are wounded on thetube 1. The discharge coils 3 are generally wounded on thetube 1 by a copper tube. There is at least 1 turn, preferably 5-10 turns, of discharge coils 3. A cooling liquid may be fed into the copper tube for cooling. Ashield 19 is sleeved on an outer side of the discharge coils 3. Theshield 19 is required to be grounded. Theshield 19 is preferably made of Al. The discharge coils 3 are electrically connected to a matchednetwork 4 and a radio-frequency power supply 5 successively. An input end of the matchednetwork 4 is electrically connected to an output end of the radio-frequency power supply 5 via a firstcoaxial transmission line 16, and an output end of the matchednetwork 4 is electrically connected to an end of the discharge coils 3. A middle portion of the firstcoaxial transmission line 16 is grounded. The output end of the matchednetwork 4 is also electrically connected to the other end of the discharge coils 3 via a secondcoaxial transmission line 17. The matchednetwork 4 is used for adjusting the impedance characteristic of the discharge coils 3 so that the adsorption of the radio-frequency power by the plasma is maximized. - One end of the
tube 1 is connected to afirst cover plate 6 in a sealed manner. The sealing structure is preferably a loose nut or a loose flange. Thefirst cover plate 6 is connected with a positive ion extraction gate via an insulating medium 7 (the insulating medium is preferably made of ceramic). The positive ion extraction gate includes a first positiveion extraction gate 12 and a second positiveion extraction gate 13 which are successively arranged from inside out. The first positiveion extraction gate 12 and the second positiveion extraction gate 13 are each electrically connected to a negative pole of aDC power supply 8, and a positive pole of theDC power supply 8 to which the first positiveion extraction gate 12 and the second positiveion extraction gate 13 are electrically connected is grounded. TheDC power supply 8 is used for providing a negative voltage to the first positiveion extraction gate 12 and the second positiveion extraction gate 13, a negative voltage at the second positiveion extraction gate 13 is higher than a negative voltage at the first positiveion extraction gate 12. - One end of the
tube 1 is connected to asecond cover plate 9 in a sealed manner. The sealing structure is preferably a loose nut or a loose flange. A flange joint 18 for connecting a vacuometer, a detection system or a test system is provided on thesecond cover plate 9. Thesecond cover plate 9 is connected to athird cover plate 11 in a sealed manner via asidewall 10, thesecond cover plate 9, thesidewall 10 and thethird cover plate 11 are preferably connected by welding, and thethird cover plate 11 is connected with a negative ion extraction gate via an insulatingmedium 7. The negative ion extraction gate includes a first negativeion extraction gate 14 and a second negativeion extraction gate 15 which are successively arranged from inside out, and the first negativeion extraction gate 14 and the second negativeion extraction gate 15 are each electrically connected to a positive pole of aDC power supply 8. A negative pole of theDC power supply 8 to which the first negativeion extraction gate 14 and the second negativeion extraction gate 15 are electrically connected is grounded. TheDC power supply 8 is used for providing a positive voltage to the first negativeion extraction gate 14 and the second negativeion extraction gate 15, a positive voltage at the second negativeion extraction gate 15 is higher than a positive voltage at the first negativeion extraction gate 14. - The
first cover plate 6, thesecond cover plate 9, thethird cover plate 11 and thesidewall 10 are preferably made of metal, for example, stainless steel. - The positive and negative ion source based on radio-frequency inductively coupled discharge in this embodiment further includes a
support platform 20 and asupport frame 21. Thesupport platform 20 is arranged horizontally and thesupport frame 21 is arranged vertically. Thesupport platform 20 supports the insulatingmedium 7 and thesidewall 10 via thesupport frame 21 so that thetube 1 is kept in the horizontal state. - The positive ion extraction gate, the
first cover plate 6, thetube 1, thesecond cover plate 9, thesidewall 10, thethird cover plate 11, the negative ion extraction gate and the insulatingmedium 7 form a vacuum chamber in this embodiment. Thefirst cover plate 6 and thethird cover plate 11 should be each communicated with a vacuum system when operating. - The operating process of this embodiment is as follows.
- 1) the vacuum chamber is vacuumized so that the pressure inside it is not higher than 10−4 Pa;
- 2) a proper amount of a working gas (for example, Ar, N2, O2, CF4, H2, D2, SF6, etc.) is fed from the intake pipe 2, and the vacuum systems on the two sides are started so that the pressure inside the vacuum chamber can be kept dynamically balanced from 0.1 Pa to 100 Pa and can be kept unchanged;
- 3) the radio-
frequency power supply 5 outputs a radio-frequency power which may be a radio-frequency power from 0 W to 1000 W at 13.56 MHz; the radio-frequency power is input to the discharge coils 3 via the matchednetwork 4; and the radio-frequency power generates an electromagnetic field by the discharge coils 3, and the electromagnetic field ionizes the working gas in thetube 1 to generate the plasma; and - 4) After the generation of the plasma, a negative DC voltage is applied to the positive ion extraction gate to extract positive ion beams; and a positive DC voltage is applied to the negative ion extraction gate to extract the electrons or negative ion beams (corresponding negative ions can be generated and extracted only when the working gas is an electronegative gas, for example, O2, H2, D2, CF4, SF6, etc.).
- In this embodiment, the positive ions and the electrons and negative ions are extracted from two sides of the
tube 1, respectively; the backplane is omitted, so that the problems of sputtering and overheating of the backplane during the extraction of pure positive ions and pure negative ions are solved, and meanwhile, the ion source constituted by the positive ions and the electrons and negative ions will not be contaminated by the sputtering, so that the ion source becomes more “clean”. - The principle and implementations of the present invention have been described by specific examples herein. The description of embodiments is merely used for helping the understanding of the method of the present invention and its key concepts. Meanwhile, for a person of ordinary skill in the art, changes may be made to the specific implementations and application ranges according to the concepts of the present invention. In conclusion, the contents of the description shall not be regarded as limitations to the present invention.
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710687473.7A CN107331593B (en) | 2017-08-11 | 2017-08-11 | A kind of negative ions source based on radio frequency discharge |
CN201710687473.7 | 2017-08-11 | ||
CN201710687473 | 2017-08-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
US10204758B1 US10204758B1 (en) | 2019-02-12 |
US20190051486A1 true US20190051486A1 (en) | 2019-02-14 |
Family
ID=60226379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/725,045 Expired - Fee Related US10204758B1 (en) | 2017-08-11 | 2017-10-04 | Positive and negative ion source based on radio-frequency inductively coupled discharge |
Country Status (2)
Country | Link |
---|---|
US (1) | US10204758B1 (en) |
CN (1) | CN107331593B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109841471B (en) * | 2017-11-24 | 2021-12-17 | 北京北方华创微电子装备有限公司 | Device for separating positive ions from negative ions, film forming equipment and chamber cleaning method |
CN109755085B (en) * | 2018-12-06 | 2020-12-01 | 兰州空间技术物理研究所 | Radio frequency ion source device convenient to maintain and adjust |
CN112522670A (en) * | 2019-09-19 | 2021-03-19 | 湖南普莱思迈电子科技有限公司 | Radio frequency method of plasma power supply |
CN111755317B (en) * | 2020-06-30 | 2023-03-14 | 中国科学院近代物理研究所 | Radio frequency negative ion source for secondary ion mass spectrometer |
CN113438794A (en) * | 2021-06-29 | 2021-09-24 | 大连理工大学 | Negative hydrogen ion source system |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5962345A (en) * | 1998-07-13 | 1999-10-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to reduce contact resistance by means of in-situ ICP |
US20040104683A1 (en) * | 2002-05-22 | 2004-06-03 | Ka-Ngo Leung | Negative ion source with external RF antenna |
US20100181474A1 (en) * | 2006-10-03 | 2010-07-22 | Yi-Sheng Wang | Angled Dual-Polarity Mass Spectrometer |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4073204B2 (en) * | 2001-11-19 | 2008-04-09 | 株式会社荏原製作所 | Etching method |
CN101937824B (en) * | 2009-06-30 | 2012-06-27 | 同方威视技术股份有限公司 | Ion mobility spectrometry and detection method using same |
CN102103973B (en) * | 2009-12-18 | 2012-11-07 | 中国科学院大连化学物理研究所 | Bipolar ion migration tube |
CN102218290A (en) * | 2011-05-04 | 2011-10-19 | 路志清 | Ion separation methods and equipment thereof |
-
2017
- 2017-08-11 CN CN201710687473.7A patent/CN107331593B/en active Active
- 2017-10-04 US US15/725,045 patent/US10204758B1/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5962345A (en) * | 1998-07-13 | 1999-10-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to reduce contact resistance by means of in-situ ICP |
US20040104683A1 (en) * | 2002-05-22 | 2004-06-03 | Ka-Ngo Leung | Negative ion source with external RF antenna |
US20100181474A1 (en) * | 2006-10-03 | 2010-07-22 | Yi-Sheng Wang | Angled Dual-Polarity Mass Spectrometer |
Also Published As
Publication number | Publication date |
---|---|
CN107331593B (en) | 2018-10-12 |
CN107331593A (en) | 2017-11-07 |
US10204758B1 (en) | 2019-02-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10204758B1 (en) | Positive and negative ion source based on radio-frequency inductively coupled discharge | |
US4859908A (en) | Plasma processing apparatus for large area ion irradiation | |
JP7206286B2 (en) | Linearized Energy Radio Frequency Plasma Ion Source, Thin Film Deposition Apparatus, and Plasma Ion Beam Generation Method | |
JP2776855B2 (en) | High frequency ion source | |
Hernandez-Garcia et al. | Compact-300 kV dc inverted insulator photogun with biased anode and alkali-antimonide photocathode | |
Tyunkov et al. | An experimental test-stand for investigation of electron-beam synthesis of dielectric coatings in medium vacuum pressure range | |
CN109786204B (en) | Method for leading out ion beam current by using gas cluster sputtering target and ion source | |
Galutschek et al. | Compact 14.5 GHz all-permanent magnet ECRIS for experiments with slow multicharged ions | |
Neumayr et al. | Performance of the MLL-IonCatcher | |
US9721760B2 (en) | Electron beam plasma source with reduced metal contamination | |
JP2008128887A (en) | Plasma source, high frequency ion source using it, negative ion source, ion beam processor, neutral particle beam incident device for nuclear fusion | |
US3028071A (en) | Glow discharge apparatus | |
CN108231529B (en) | Low-voltage magnetic control cathode ion source | |
JPS6380534A (en) | Plasma processing apparatus | |
EP2838323B1 (en) | Plasma generation device, vapor deposition device, and plasma generation method | |
Barnfield et al. | A 100 keV heavy ion accelerator for the study of irradiation damage | |
US10297413B2 (en) | Method and device for the production of highly charged ions | |
Schiffer et al. | An advanced radio-frequency quadrupole ion cooler for Accelerator Mass Spectrometry | |
Eckstein et al. | Bombardon: an apparatus for investigating the influence of 5–20 keV ions on metal targets | |
WO2022264603A1 (en) | Plasma source, and atomic clock employing said plasma source | |
JP7237877B2 (en) | Ion source device | |
RU2740146C1 (en) | Ion source (ion gun) | |
US20240170251A1 (en) | Three layer resonator coil for linear accelerator | |
Lapin et al. | First experiments on applying the gasdynamic ECR ion source for negative hydrogen ion production | |
Saito et al. | Metal ion source using rf discharge combined with sputtering |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
AS | Assignment |
Owner name: DALIAN UNIVERSITY OF TECHNOLOGY, CHINA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:GAO, FEI;WANG, YOUNIAN;REEL/FRAME:044148/0687 Effective date: 20170914 |
|
FEPP | Fee payment procedure |
Free format text: ENTITY STATUS SET TO SMALL (ORIGINAL EVENT CODE: SMAL); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20230212 |