CN109841471B - Device for separating positive ions from negative ions, film forming equipment and chamber cleaning method - Google Patents
Device for separating positive ions from negative ions, film forming equipment and chamber cleaning method Download PDFInfo
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- CN109841471B CN109841471B CN201711187607.5A CN201711187607A CN109841471B CN 109841471 B CN109841471 B CN 109841471B CN 201711187607 A CN201711187607 A CN 201711187607A CN 109841471 B CN109841471 B CN 109841471B
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Abstract
The invention discloses a device for separating positive and negative ions, which is used for realizing the separation of the positive and negative ions in a plasma source and comprises: the top end of the insulating cavity is communicated with the plasma source, and the insulating cavity is provided with a first opening and a second opening which are opposite; the electric field generating assembly is used for generating an electric field with the direction changing alternately, so that positive ions and negative ions can move towards the bottom end of the insulating cavity alternately under the action of electric field force; and the magnetic field generating assembly is used for enabling negative ions to enter the first opening after being deflected under the action of the Lorentz force or enabling positive ions to enter the second opening after being deflected under the action of the Lorentz force. The invention can effectively avoid the recombination of positive and negative ions and improve the cleaning effect and efficiency of the film forming equipment. The invention also provides a film forming device with a device for separating positive and negative ions and a chamber cleaning method thereof.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a device for separating positive ions from negative ions, film forming equipment and a chamber cleaning method.
Background
In recent years, semiconductor devices have been rapidly developed, and they are related to semiconductors, integrated circuits, solar panels, flat panel displays, microelectronics, light emitting diodes, and the like, and these devices are mainly composed of a plurality of thin films formed on a substrate and having different thicknesses. In the film forming process, the film can also grow on the surfaces of other parts of the film forming equipment, such as the lower surface of the gas spray header, the edge of the heating base, the inner wall of the uniform flow grid and the like. The films are easy to fall off and generate particles, so that the film forming quality is influenced; therefore, the film forming apparatus requires frequent periodic open chamber cleaning maintenance. In order to ensure the stability of the equipment and shorten the maintenance time, a remote ion source (RPS) in-situ cleaning design has been introduced.
The conventional film forming apparatus having an RPS in-situ cleaning function, for example, a PE (plasma enhanced) film forming apparatus having a CCP (radio frequency capacitively coupled plasma) in-situ cleaning function, generally includes a chamber, a large lid, a substrate, a gas shower head, a heating base, a first reaction source inlet, a second reaction source inlet, a manifold, a gate valve, an exhaust gas pipeline, an RPS, and the like.
In the above-mentioned structure of the film forming apparatus with the RPS in-situ cleaning function, NF is generally adopted3Gas generation F-And N+Ions. F-Has cleaning capability, and can clean the chamber. During in-situ cleaning, opening a gate valve on a manifold arranged between the RPS and the chamber, and closing front end valves of a first reaction source inlet and a second reaction source inlet connected to the manifold; starting RPS and introducing NF3Ionization to form F-And N+And enters the chamber with the argon stream. F-And N+The ions are frequently collided by the charged particles in the RPS, so that the ions have high energy and are not easy to recombine.
However, F when RPS is generated-And N+When argon gas flow enters the cavity, the argon gas flow needs to pass through a plurality of links such as a gate valve, a manifold, a gas spray header and the like, and in the process, the ion energy supply disappears, so that F occurs-And N+Collision with argon and F-And N+Attract each other, resulting in lower and lower ion energies, in this case F-And N+Will easily complex into NF3Thereby greatly reducing F-The number of the cells. Thus, after entering the chamber, free F-A few remain, and the cleaning efficiency and cleaning effect are greatly reduced.
At the same time, in F-And N+During the compounding process, a large amount of heat can be released, that is, the energy of plasma generated by RPS acts on the gate valve, the manifold and the gas spray header in the form of heat energy, so that the parts need to be cooled by water, the structure of the equipment is complicated, and the equipment is also complicatedThe waste of energy.
In addition, in order to reduce the recombination probability of positive and negative ions, the designed channel pipeline is also thick, so that the diameter of the gate valve is large, and waste is caused.
The above problems cause inefficient use of the in-situ cleaning function of the film forming apparatus, and the problem is very troublesome for those skilled in the art, and is an urgent need to be solved by the industry.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a device for separating positive ions from negative ions, film forming equipment and a chamber cleaning method.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the invention provides a device for separating positive and negative ions, which is used for realizing the separation of the positive and negative ions in a plasma source and comprises:
the top end of the insulating cavity is communicated with the plasma source, and the insulating cavity is provided with a first opening and a second opening which are opposite;
the electric field generating assembly is used for generating an electric field with the direction changing alternately, so that positive ions and negative ions can move towards the bottom end of the insulating cavity alternately under the action of electric field force;
and the magnetic field generating assembly is used for enabling the negative ions to enter the first opening after being deflected under the action of the Lorentz force or enabling the positive ions to enter the second opening after being deflected under the action of the Lorentz force.
Furthermore, the caliber of the top end of the insulating cavity is larger than that of the bottom end, and the caliber of the top end is also larger than that of the plasma source outlet.
Further, the electric field generating assembly comprises an electrode plate and a power supply for supplying power to the electrode plate, the electrode plate is connected to the bottom end of the insulating cavity, and the electrode plate and the plasma source are respectively communicated with the positive electrode and the negative electrode of the power supply to generate a uniform electric field between the electrode plate and the plasma source.
Furthermore, the magnetic field generating assembly comprises two magnets which are respectively positioned at the front side and the rear side of the insulating cavity so as to form a uniform magnetic field in the insulating cavity.
Further, the caliber of the bottom end of the insulating cavity is smaller than the curvature radius of the running track of the positive ions or the negative ions in the magnetic field;
the distance between the top end of the first opening or the second opening and the projection point of the top end of the magnet on the axis of the insulating cavity is larger than the curvature radius of the running track of the positive ions or the negative ions in the magnetic field.
Further, the distance between the bottom end of the first opening or the second opening and the projection point of the bottom end of the insulating cavity on the axis of the insulating cavity is greater than the distance between the bottom end of the magnet and the projection point of the bottom end of the insulating cavity on the axis of the insulating cavity.
Further, the N pole of the magnet disposed at the front side of the insulating cavity faces the insulating cavity, and the S pole of the magnet disposed at the rear side of the insulating cavity faces the insulating cavity.
Further, the cross section of the insulating cavity is rectangular, and/or the insulating cavity is made of polytetrafluoroethylene, PVC, polyetherimide, quartz or ceramic materials.
The invention also provides a film forming apparatus comprising the above device for separating positive and negative ions, wherein,
the first opening is connected with an inlet of the film forming equipment through a first control valve, and the second opening is connected with a tail gas pipeline of the film forming equipment through a second control valve.
The invention also provides a chamber cleaning method of the film forming equipment, which comprises the following steps:
step S1, opening the first control valve and closing the second control valve;
step S2, introducing plasma into the insulating cavity;
step S3, enabling the electric field generating assembly to generate a positive electric field, enabling negative ions in the plasma to enter an inlet of the film forming equipment from the first opening, and cleaning the chamber for a preset time;
step S4, opening the second control valve, and closing the first control valve;
and step S5, enabling the electric field generating assembly to generate a reverse electric field, and enabling positive ions in the plasma to enter a tail gas pipeline of the film forming equipment from a second opening and then to be discharged.
The invention has the beneficial effects that:
the device for separating positive and negative ions generates an electric field with the direction changing alternately through the electric field generating assembly, so that the positive ions and the negative ions can move towards the bottom end of the insulating cavity alternately under the action of the electric field force; meanwhile, a uniform magnetic field is generated by the magnetic field generating assembly, so that positive ions or negative ions which alternately move downwards deflect under the action of Lorentz force to move downwards along the side wall of the insulating cavity to enter the second opening or the first opening respectively; therefore, when the device for separating positive and negative ions is adopted as the membrane forming equipment, the problem of compounding of the positive and negative ions can be effectively avoided, the utilization rate of the negative ions is improved, and energy is saved; in addition, the quantity of negative ions entering the chamber is ensured, so that the cleaning effect and the cleaning efficiency of the film forming equipment during cleaning the chamber are improved; meanwhile, after the device for separating positive ions and negative ions is adopted, the cleaning pipeline of the film forming equipment does not need to be cooled, so that the structure of the film forming equipment becomes simple.
According to the chamber cleaning method based on the film forming equipment, positive ions and negative ions in the plasma can be continuously separated and are deflected into the second opening and the first opening respectively in an alternating mode, so that the negative ions can be ensured to enter the chamber, and the chamber of the film forming equipment can be cleaned.
Drawings
FIG. 1 is a schematic diagram of an apparatus for separating positive and negative ions according to a preferred embodiment of the present invention;
FIG. 2 is a schematic diagram of a magnet disposed on an insulating cavity according to a preferred embodiment of the present invention;
FIG. 3 is a schematic diagram of the structure of a film deposition apparatus for separating positive and negative ions according to a preferred embodiment of the present invention;
FIG. 4 is a schematic diagram of the motion trajectory of negative ions in an electric field and a magnetic field;
FIG. 5 is a schematic diagram of the motion trajectory of positive ions in an electric field and a magnetic field;
in the figure, 1, a film forming equipment chamber, 2, a large cover, 3, a substrate, 4, a gas shower head, 5, a heating base, 6, a first reaction source inlet, 7, a second reaction source inlet, 8, a manifold, 10, an exhaust pipeline, 11, a remote ion source, 12, a first back end pipeline, 13, a second back end pipeline, 14, film forming equipment, 15, a first control valve, 16, a second control valve, 17, a device for separating positive ions and negative ions, 101, a remote ion source outlet, 201, an insulating cavity, 202, an electrode plate, 203, an N pole magnet, 204, a first opening, 205, a direct current power supply, 206, a second opening, 207, an S pole magnet, 208, negative ions, 209, positive ions 210, an upper end of the insulating cavity, 211, a lower end of the insulating cavity are arranged in sequence.
Detailed Description
The invention aims to solve the problems of low cleaning efficiency and poor cleaning effect in the in-situ cleaning of a remote ion source, provides a device for separating positive and negative ions, film forming equipment with the device for separating positive and negative ions and a chamber cleaning method, and greatly reduces the manufacturing cost due to simple structure and common materials. The invention designs a device for separating positive and negative ions and a film forming device provided with the device for separating positive and negative ions according to the principle that the Lorentz force can change the motion direction of ions in a magnetic field and the electric field can separate positive and negative ions. After the positive ions and the negative ions are separated, the required negative ions can enter the chamber to be cleaned, and the unnecessary positive ions can be discharged into tail gas, so that the compounding of the positive ions and the negative ions is avoided, and the cleaning efficiency and the cleaning effect are greatly improved.
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
In the following detailed description of the embodiments of the present invention, in order to clearly illustrate the structure of the present invention and to facilitate explanation, the structure shown in the drawings is not drawn to a general scale and is partially enlarged, deformed and simplified, so that the present invention should not be construed as limited thereto.
In the following description of the present invention, please refer to fig. 1 and fig. 3, in which fig. 1 is a schematic structural diagram of an apparatus for separating positive and negative ions according to a preferred embodiment of the present invention, and fig. 3 is a schematic structural diagram of an apparatus for separating positive and negative ions on a film forming apparatus according to a preferred embodiment of the present invention. As shown in fig. 1 and fig. 3, the device 17 for separating positive and negative ions of the present invention can be applied to a film forming apparatus having a remote ion source (RPS) in-situ cleaning function, and is used for separating positive ions 209 and negative ions 208 in a plasma generated by the remote ion source 11 when the film forming apparatus 14 is cleaned in situ by using the remote ion source 11, so as to avoid recombination of the positive and negative ions 209 and 208, ensure the quantity of the negative ions 208 entering into the chamber 1, and improve the cleaning effect and the cleaning efficiency. The device 17 for separating positive and negative ions is arranged between the remote ion source 11 and the film forming equipment 14; wherein, the upper end of the device 17 is connected with the remote ion source 11, and the device 17 is connected to the gas shower head 4 in the film forming equipment chamber 1 through the first back end pipeline 12 and the manifold 8. The communication between the film forming apparatus 14 and the remote ion source 11 can be realized by the positive and negative ion separating apparatus 17 of the present invention.
Please refer to fig. 1 and fig. 3. The device for separating positive and negative ions comprises an insulating cavity, an electric field generating assembly, a magnetic field generating assembly and other main units.
The insulating cavity 201 may be a through structure. The upper end (top end) of the opening of the insulating cavity is hermetically connected with the remote ion source outlet 101, and the caliber of the upper end 210 of the insulating cavity is larger than that of the remote ion source outlet 101, that is, the area of the opening at the upper end of the insulating cavity is larger than that of the RPS outlet. The lower end (bottom end) of the opening of the insulating cavity 201 is hermetically connected to an electrode plate 202; and, the caliber of the upper end 210 of the insulating cavity is larger than the caliber of the lower end 211 of the insulating cavity. Therefore, a step is formed at the joint of the upper end and the lower end of the insulating cavity 201, the caliber of the insulating cavity above the step is larger than that of the insulating cavity below the step, and an ion diffusion cavity is formed below the remote ion source outlet 101, so that positive ions and negative ions can be diffused at the position, the ion concentration is reduced, and the positive ions and the negative ions are not easy to compound.
The insulating cavity is provided with a first opening and a second opening which are opposite; for example, the first opening 204 and the second opening 206 may be disposed on the left and right side walls (in the direction of the insulating cavity), and the first opening 204 and the second opening 206 may be disposed on the two side walls near the smaller diameter region at the lower end of the insulating cavity. The first opening 204 can be connected with the inlet of the film forming equipment 14 through the first rear end pipeline 12 and the manifold 8, and is connected to the gas spray header 4 in the film forming equipment chamber 1; a first control valve 15 may be mounted on the first rear end line. The second opening 206 can be connected with the tail gas pipeline 10 below the film forming equipment chamber 1 through a second rear end pipeline 13; a second control valve 16 may be provided in the second rear end line.
The electric field generating assembly comprises an electrode plate 202 and a direct current power supply 205 for supplying power to the electrode plate; the electrode plate 202 is attached to the lower end 211 of the insulating cavity. The electrode plate 202 and the remote plasma source 11 are respectively connected to the positive and negative electrodes of the dc power source 205, so that a uniform electric field is generated therebetween. The electric field generating assembly can generate an electric field with the direction changing alternately, so that positive ions and negative ions move towards the lower end 211 of the insulating cavity alternately under the action of the electric field force.
Referring to fig. 2, fig. 2 is a schematic view of a magnet disposed on an insulating cavity according to a preferred embodiment of the invention. As shown in fig. 2, a uniform magnetic field is provided between the front and rear sides (in its own direction) of the insulating cavity 201; a uniform magnetic field can be formed between the front and rear sides of the insulating chamber by providing a pair of magnets 203 and 207 that attract each other on the front and rear sides of the insulating chamber 201. The magnetic field generating assembly may be comprised of a pair of magnets 203 and 207. An N pole (N pole magnet 203) of the magnet is provided on the front side of the insulating cavity and faces the insulating cavity, and an S pole (S pole magnet 207) of the magnet is provided on the rear side of the insulating cavity and faces the insulating cavity.
The magnetic field generating assembly is used for deflecting negative ions under the action of the lorentz force and then entering the first opening 204, or deflecting positive ions under the action of the lorentz force and then entering the second opening 206. When a voltage is applied across the electrode plate 202, an electric field is formed between the electrode plate 202 and the RPS. When the electrode plate 202 is connected to the positive electrode of the dc power 205, the remote ion source is correspondingly connected to the negative electrode of the dc power and ground. At this time, the negative ions move toward the electrode plate 202 under the action of the electric field force; meanwhile, the positive ions will stay at the L from the electrode plate 202 under the action of the electric field force, and satisfy:
L＝vq/mg
wherein, the potential difference between the v-electrode plate 202 and the RPS, the q-positive ion charge, the m-positive ion mass, and the g-gravity acceleration.
Alternatively, when the electrode plate is connected to the negative electrode of the dc power 205, the remote ion source is correspondingly connected to the positive electrode of the dc power and ground. At this time, the positive ions move toward the electrode plate 202 under the action of the electric field force; meanwhile, the negative ions will stay at the L position from the electrode plate 202 under the action of the electric field force, and also satisfy:
L＝Vq/mg
wherein, the potential difference between the V-electrode plate 202 and the RPS, the q-negative ion charge amount, the m-negative ion mass and the g-gravity acceleration.
The magnets arranged on the front side and the rear side of the insulating cavity can be permanent magnets or electromagnets, and the electromagnets are preferably electromagnets. The distance H1 between the bottom end of the first opening 204 or the second opening 206 and the projection point of the bottom end of the insulating cavity 201 on the axis of the insulating cavity is greater than the distance H2 between the bottom end of the magnet and the projection point of the bottom end of the insulating cavity on the axis of the insulating cavity, as shown in FIG. 4.
The distance from the upper end face of the electromagnet to the electrode plate 202 is also L, that is, L ═ vq/mg.
When the negative ions move toward the electrode plate 202 in the electric field, they are biased to the N-pole by the lorentz force. If the moving radius of the (positive/negative) ions under the action of the lorentz force is r, then:
r＝vm/Bq
wherein, the speed of v- (positive/negative) ions in a magnetic field is vertical to the magnetic field line, the mass of m- (positive/negative) ions, the magnetic field intensity of B-, and the charge quantity of q- (positive/negative) ions.
In order to form good movement effect of positive and negative ions, the caliber (opening side length or diameter) of the lower end 211 of the insulating cavity is smaller than the curvature radius R of the moving track of the positive ions 209 or the negative ions 208 in the magnetic field; and the distance H3 between the top ends of the first opening 204 and the second opening 206 and the projection points of the top ends of the magnets 203 and 207 on the axis of the insulating cavity 201 is larger than the curvature radius R of the traveling locus of the positive ions or the negative ions in the magnetic field, as shown in FIG. 4.
Therefore, when the positive and negative ions move in the magnetic field in the insulating cavity, the positive and negative ions inevitably touch the inner wall of the insulating cavity, and the Lorentz force and the supporting force of the inner wall of the insulating cavity form a pair of interacting balance forces; at this time, ions only move downwards along the inner wall of the insulating cavity under the action of an electric field force until reaching the first opening 204/the second opening 206 at two sides of the insulating cavity, the supporting force of the inner wall of the insulating cavity disappears, and the ions enter the first opening 204/the second opening 206 and a rear end pipeline (a first rear end pipeline/a second rear end pipeline) thereof under the action of a lorentz force and enter a chamber/a tail gas pipeline along with the gas flow.
Thus, by arranging the electric field generating assembly between the remote ion source and the electrode plate 202, an electric field with a direction changing alternately is formed, namely, the electric field generating assembly can be used for separating positive ions and negative ions generated by the remote ion source and enabling the positive ions or the negative ions to move downwards alternately under the action of the electric field force; meanwhile, a uniform magnetic field is generated by the magnetic field generating assembly arranged between the front side and the rear side of the insulating cavity, and the uniform magnetic field can be used for deflecting the positive ions 209 or the negative ions 208 which alternately move downwards under the action of the lorentz force so as to move downwards along the side wall of the insulating cavity 201 to enter the second opening 206 or the first opening 204 respectively.
The cross-section of the insulating cavity may be rectangular or circular, preferably rectangular. The insulating cavity material is an insulating material, and specifically may be polytetrafluoroethylene, PVC, polyetherimide, quartz, ceramic, and the like, and preferably is ceramic.
The electrode plate material is metal, such as: silver, copper, aluminum, and the like, and aluminum is preferable.
Referring to FIG. 3, there is shown a film forming apparatus 14 of the present invention employing the above-described positive and negative ion separating device 17. The structure of the film forming apparatus 14 may include a chamber 1, a large lid 2, a gas shower head 4, a heating susceptor 5, a substrate 4, a first reaction source inlet 6, a second reaction source inlet 7, a manifold 8, an exhaust gas line 10, and RPS11, and the like. In this film formation apparatus 14, the first opening 204 is connected to an inlet of the film formation apparatus through the first control valve 15, and the second opening 206 is connected to the exhaust line 10 of the film formation apparatus through the second control valve 16.
The device for separating positive and negative ions can effectively avoid the compounding problem of the positive and negative ions, improve the utilization rate of the negative ions and save energy; and, because the quantity that the negative ion got into the cavity has been guaranteed, so cleaning performance and cleaning efficiency have been improved. Meanwhile, after the device for separating positive ions and negative ions is adopted, the cleaning pipeline of the film forming equipment does not need to be cooled, so that the structure of the film forming equipment becomes simple; in addition, the device for separating positive and negative ions can be made of common materials, so that the manufacturing cost is greatly reduced.
Hereinafter, a chamber cleaning method of a film forming apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
The invention discloses a method for cleaning a chamber of film forming equipment, which can be applied to the film forming equipment provided with a device for separating positive ions and negative ions, and comprises the following steps:
step S1 opens the first control valve 15 and closes the second control valve 16.
First, the first reaction source inlet 6, the second reaction source inlet 7 of the film forming apparatus 14 are closed, the second control valve 16 is closed, and the first control valve 15 is opened to open the first opening 204.
Step S2, introducing plasma into the insulating cavity 201.
Step S3, the electric field generating assembly generates a positive electric field, and the negative ions 208 in the plasma enter the inlet of the film forming apparatus through the first opening 204, and the chamber is cleaned for a preset time, which can be set according to actual cleaning requirements.
Then, the electrode plate 202 is connected to the positive electrode of the dc power source 205, and the remote ion source 11 is connected to the negative electrode of the dc power source 205 and ground. This creates a forward electric field between the remote ion source and the electrode plate 202; the electrode plate 202 is at a high potential of the electric field, and the remote ion source 11 is at a low potential of the electric field. Meanwhile, a uniform magnetic field is formed between the front side and the rear side of the insulating cavity 201 by the N-pole magnet 203 and the S-pole magnet 207 which are disposed at the front side and the rear side of the insulating cavity 201, and magnetic lines of the uniform magnetic field point to the N pole.
Next, a carrier gas (e.g., argon) and a cleaning gas (e.g., NF) are introduced into the remote ion source3) And activating the remote ion source to deliver a cleaning gas (NF)3) Ionization to form positive ions (N)+Ion) 209 and negative ion (F)-Ions) 208; f-Ions 208 and N+Ions 209 are driven by the argon flow to flow into the insulating chamber 201. At this time, N+Under the action of the electric field force, ions stay at the upper end (ion diffusion cavity with larger caliber) 210 of the insulating cavity below the RPS outlet 101 and at the low potential position of the electric field; and F-Under the action of the electric field force, the ions move toward the electrode plate 202 at the high potential of the electric field. Thus, positive ions and negative ions are effectively separated.
Wait for F-After the ions move to the magnetic field, the ions are subjected to the action of Lorentz force. Under the action of Lorentz force, make F-The ions deviate from the original vertical downward movement trajectory and move toward the first opening 204 side. The caliber of the bottom end of the insulating cavity 201 is smaller than F-The radius of curvature R of the ion trajectory in the magnetic field is larger than the radius of curvature R of the ion trajectory in the magnetic field, and F is because the distance H3 from the top end of the first opening 204 to the projection point of the magnet top end on the axis of the insulating cavity 201 is larger than the radius of curvature R of the ion trajectory in the magnetic field-Ions inevitably collide with the inner wall of the insulating chamber 201.
When F is present-After the ions 208 collide with the inner wall of the insulating cavity 201, the lorentz force and the supporting force of the inner wall of the insulating cavity 201 form a pair of balance forces. At this time, F-The ions continue to move downward along the inner wall of the insulating cavity 201 toward the electrode plate 202 by the force of the electric field until they move to the first opening 204, as shown in fig. 4. At this time, the supporting force of the inner wall of the insulating cavity 201 disappears, F-The ions 208 will continue to enter the first opening 204 and the first back end pipe 12 thereof under the action of the Lorentz forceAnd further enters the chamber 1 of the film forming equipment along with the argon flow to realize the cleaning of the chamber.
Step S4 opens the second control valve 16 and closes the first control valve 15.
Due to N+Under the action of the electric field force, ions 209 are continuously gathered at the RPS outlet, namely the upper end 210 of the insulating cavity; when N is present+The concentration of ions 209 to some extent affects F-The passage of ions 208. The polarity of the electrode plate 202 needs to be timed to alternate positive and negative. At this time, it is necessary to close the first control valve 15 to close the first opening 204 and open the second control valve 16 to open the second opening 206.
Step S5, the electric field generating assembly generates a reverse electric field, and the positive ions in the plasma enter the exhaust pipe of the film forming apparatus through the second opening 206 and are then discharged.
The electrode plate 202 is connected to the negative electrode of the DC power supply, and the remote ion source 11 is connected to the positive electrode of the DC power supply and the ground, so that a reverse electric field having a low potential at the electrode plate and a high potential at the remote ion source 11 is formed between the remote ion source 11 and the electrode plate 202, and the direction of the reverse electric field is opposite to that of the electric field. Thus, F-Under the action of the electric field force, the ions 208 stay at the upper end 210 of the insulating cavity at the high potential position of the electric field; and N is+The ions 209 are moved by the electric field force toward the electrode plate 202 at a low potential of the electric field, so that the positive ions and the negative ions are separated.
Wait for N+After the ions 209 move to the magnetic field, they move toward the second opening 206 from their original movement trajectories by the lorentz force. The caliber of the bottom end of the insulating cavity 201 is smaller than N+The radius of curvature R of the trajectory of the ion 209 in the magnetic field is further determined by the fact that the distance H3 from the top of the second opening 206 to the projection point of the magnet top on the axis of the insulating cavity 201 is greater than N+Radius of curvature R (see FIG. 4) of trajectory of ion 209 in the magnetic field, so N+Ions 209 must also hit the inner walls of the insulating cavity 201.
N+After the ions 209 collide with the inner wall of the insulating cavity 201, the Lorentz force is the supporting force between the ions and the inner wall of the insulating cavity 201A pair of balanced forces is formed. At this time, N+The ions 209 are moved by the electric field force toward the electrode plate 202 and continue to move downward along the inner wall of the insulating cavity 201 to the second opening 206 by the electric field force, as shown in fig. 5. At this time, the supporting force of the inner wall of the insulating cavity 201 disappears, N+The ions 209 continue to enter the second opening 206 and the second rear end pipeline 13 thereof under the action of the lorentz force, and are further discharged into the tail gas pipeline 10 of the film forming equipment along with the argon flow.
Since only F is present-The ions 208 move in the first back end channel, manifold, so no interaction with N occurs+Recombination of ions 209, thus ensuring F into chamber 1-The number of ions 208 is not reduced, thereby ensuring the cleaning effect and cleaning efficiency.
Repeating the formation process of the positive and negative electric fields can continuously generate N in the plasma generated by the remote ion source+Ions 209 and F -208 ions are continuously separated and deflected into the second opening 206 and the first opening 204 in an alternating fashion to ensure a sufficient amount of F-The ions 208 continue to enter the chamber until the chamber of the film forming apparatus is cleaned.
The above description is only a preferred embodiment of the present invention, and the embodiments are not intended to limit the scope of the present invention, so that all equivalent structural changes made by using the contents of the specification and the drawings of the present invention should be included in the scope of the present invention.
Claims (10)
1. An apparatus for separating positive and negative ions in a plasma source, comprising:
the top end of the insulating cavity is communicated with the plasma source, and the insulating cavity is provided with a first opening and a second opening which are opposite;
the electric field generating assembly is used for generating an electric field which changes along the axial direction of the insulating cavity alternately, so that positive ions and negative ions can move towards the bottom end of the insulating cavity alternately under the action of electric field force;
and the magnetic field generating assembly is used for forming a magnetic field intersected with the electric field, and the negative ions enter the first opening after being deflected under the action of Lorentz force and the electric field force or the positive ions enter the second opening after being deflected under the action of the Lorentz force and the electric field force through the electric field generating assembly and the magnetic field generating assembly.
2. The apparatus for separating positive and negative ions according to claim 1,
the caliber of the top end of the insulating cavity is larger than that of the bottom end of the insulating cavity, and the caliber of the top end of the insulating cavity is also larger than that of the plasma source outlet.
3. The apparatus for separating positive and negative ions according to claim 1,
the electric field generating assembly comprises an electrode plate and a power supply for supplying power to the electrode plate, the electrode plate is connected to the bottom end of the insulating cavity, and the electrode plate and the plasma source are respectively communicated with the positive electrode and the negative electrode of the power supply to generate a uniform electric field between the electrode plate and the plasma source.
4. The apparatus for separating positive and negative ions according to claim 1,
the magnetic field generating assembly comprises two magnets which are respectively positioned at the front side and the rear side of the insulating cavity so as to form a uniform magnetic field in the insulating cavity.
5. The apparatus for separating positive and negative ions according to claim 4,
the caliber of the bottom end of the insulating cavity is smaller than the curvature radius of the running track of the positive ions or the negative ions in the magnetic field;
the distance between the top end of the first opening or the top end of the second opening and the projection point of the top end of the magnet on the axis of the insulating cavity is larger than the curvature radius of the running track of the positive ions or the negative ions in the magnetic field.
6. The apparatus for separating positive and negative ions according to claim 5,
the distance between the bottom end of the first opening or the bottom end of the second opening and the projection point of the bottom end of the insulating cavity on the axis of the insulating cavity is greater than the distance between the bottom end of the magnet and the projection point of the bottom end of the insulating cavity on the axis of the insulating cavity.
7. The apparatus for separating positive and negative ions according to claim 6,
the N pole of the magnet arranged on the front side of the insulation cavity faces the insulation cavity, and the S pole of the magnet arranged on the rear side of the insulation cavity faces the insulation cavity.
8. The apparatus for separating positive and negative ions according to any one of claims 1 to 7,
the cross section of the insulating cavity is rectangular, and/or,
the insulating cavity is made of polytetrafluoroethylene, PVC, polyetherimide, quartz or ceramic materials.
9. A film forming apparatus comprising the device for separating positive and negative ions according to any one of claims 1 to 8,
the first opening is connected with an inlet of the film forming equipment through a first control valve, and the second opening is connected with a tail gas pipeline of the film forming equipment through a second control valve.
10. A chamber cleaning method for a film forming apparatus according to claim 9, comprising:
step S1, opening the first control valve and closing the second control valve;
step S2, introducing plasma into the insulating cavity;
step S3, enabling the electric field generating assembly to generate a positive electric field, enabling negative ions in the plasma to enter an inlet of the film forming equipment from the first opening, and cleaning the chamber for a preset time;
step S4, opening the second control valve, and closing the first control valve;
and step S5, enabling the electric field generating assembly to generate a reverse electric field, and enabling positive ions in the plasma to enter a tail gas pipeline of the film forming equipment from a second opening and then to be discharged.
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| US20040007452A1 (en) * | 2001-12-05 | 2004-01-15 | Warren William L. | Water purification: ion separation |
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| JPH06208843A (en) * | 1993-01-12 | 1994-07-26 | Nissin Electric Co Ltd | Negative ion implanting device |
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