US20180251907A1 - Wide lipseal for electroplating - Google Patents

Wide lipseal for electroplating Download PDF

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Publication number
US20180251907A1
US20180251907A1 US15/446,631 US201715446631A US2018251907A1 US 20180251907 A1 US20180251907 A1 US 20180251907A1 US 201715446631 A US201715446631 A US 201715446631A US 2018251907 A1 US2018251907 A1 US 2018251907A1
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US
United States
Prior art keywords
lipseal
electroplating
wafer
semiconductor substrate
protrusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US15/446,631
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English (en)
Inventor
Kari Thorkelsson
Aaron Berke
Santosh Kumar
Robert Rash
Lee Peng Chua
Bryan Buckalew
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to US15/446,631 priority Critical patent/US20180251907A1/en
Assigned to LAM RESEARCH CORPORATION reassignment LAM RESEARCH CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BUCKALEW, BRYAN, CHUA, LEE PENG, BERKE, AARON, KUMAR, SANTOSH, RASH, ROBERT, THORKELSSON, KARI
Priority to KR1020180023598A priority patent/KR20180100488A/ko
Priority to SG10201801584QA priority patent/SG10201801584QA/en
Priority to TW107106485A priority patent/TW201841301A/zh
Priority to JP2018034439A priority patent/JP2018145524A/ja
Priority to CN201810166071.7A priority patent/CN108531953B/zh
Publication of US20180251907A1 publication Critical patent/US20180251907A1/en
Priority to KR1020230145988A priority patent/KR20230153982A/ko
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/004—Sealing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/007—Current directing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Definitions

  • This invention relates to the formation of damascene interconnects for integrated circuits, and electroplating apparatuses which are used during integrated circuit fabrication.
  • Electroplating is a common technique used in integrated circuit (IC) fabrication to deposit one or more layers of conductive metal. In some fabrication processes it is used to deposit single or multiple levels of copper interconnects between various substrate features.
  • An apparatus for electroplating typically includes an electroplating cell having a pool/bath of electrolyte and a clamshell designed to hold a semiconductor substrate during electroplating.
  • a semiconductor substrate is submerged into the electrolyte pool such that one surface of the substrate is exposed to electrolyte.
  • One or more electrical contacts established with the substrate surface are employed to drive an electrical current through the electroplating cell and deposit metal onto the substrate surface from metal ions available in the electrolyte.
  • the electrical contact elements are used to form an electrical connection between the substrate and a bus bar acting as a current source.
  • a conductive seed layer on the substrate contacted by the electrical connections may become thinner towards the edge of the substrate, making it more difficult to establish an optimal electrical connection with the substrate.
  • a lipseal for use in a lipseal assembly of an electroplating clamshell which engages and supplies electrical current to a semiconductor substrate during electroplating.
  • the lipseal comprises an elastomeric body having an outer portion configured to engage a cup of the lipseal assembly and an inner portion configured to engage a peripheral region of the semiconductor substrate.
  • the inner portion includes a protrusion having a width in a radial direction sufficient to inhibit diffusion of acid in an electroplating solution used during the electroplating.
  • the protrusion comprises an annular rim which extends completely around an inner periphery of the lipseal.
  • FIG. 1 shows an electroplating apparatus in which a lipseal as described herein may be used to prevent acid from reaching contact elements.
  • FIG. 2 shows details of a lipseal assembly which can be used in the apparatus shown in FIG. 1 .
  • FIG. 3 shows details of the lipseal assembly shown in FIG. 2 .
  • FIG. 4 shows details of the lipseal assembly shown in FIG. 3 .
  • FIG. 5 is a graph of acid concentration in lipseal area versus lipseal width.
  • FIGS. 6 a - c are photos of the copper seed layer after electroplating with FIG. 6 a showing the copper seed layer after electroplating a dry wafer, FIG. 6 b showing severe corrosion after electroplating a wet wafer using a 0.028 inch wide lipseal, and FIG. 6 c showing minor corrosion of the copper seed layer after electroplating a wet wafer using a 0.034 inch wide lipseal.
  • FIG. 1 presents a perspective view of a wafer holding and positioning apparatus 100 for electrochemically treating semiconductor wafers.
  • the apparatus 100 includes wafer-engaging components, which are sometimes referred to as “clamshell components,” or a “clamshell assembly,” or just as a “clamshell.”
  • the clamshell assembly comprises a cup 101 and a cone 103 .
  • the cup 101 holds a wafer and the cone 103 clamps the wafer securely in the cup.
  • Other cup and cone designs beyond those specifically depicted here can be used.
  • a common feature is that a cup that has an interior region in which the wafer resides and a cone that presses the wafer against the cup to hold it in place.
  • the clamshell assembly (which includes the cup 101 and the cone 103 ) is supported by struts 104 , which are connected to a top plate 105 .
  • This assembly ( 101 , 103 , 104 , and 105 ) is driven by a motor 107 via a spindle 106 connected to the top plate 105 .
  • the motor 107 is attached to a mounting bracket (not shown).
  • the spindle 106 transmits torque (from the motor 107 ) to the clamshell assembly causing rotation of a wafer (not shown in this figure) held therein during plating.
  • An air cylinder (not shown) within the spindle 106 also provides a vertical force for engaging the cup 101 with the cone 103 .
  • a robot with an end effector arm can insert a wafer in between the cup 101 and the cone 103 .
  • the cone 103 is engaged with the cup 101 , which immobilizes the wafer within apparatus 100 leaving a working surface on one side of the wafer (but not the other) exposed for contact with the electrolyte solution.
  • the clamshell assembly includes a spray skirt 109 that protects the cone 103 from splashing electrolyte.
  • the spray skirt 109 includes a vertical circumferential sleeve and a circular cap portion.
  • a spacing member 110 maintains separation between the spray skirt 109 and the cone 103 .
  • the assembly including components 101 - 110 is collectively referred to as a “wafer holder” (or “substrate holder”) 111 .
  • a wafer holder or “substrate holder”
  • the concept of a “wafer holder”/“substrate holder” extends generally to various combinations and sub-combinations of components that engage a wafer/substrate and allow its movement and positioning.
  • a tilting assembly (not shown) may be connected to the wafer holder to permit angled immersion (as opposed to flat horizontal immersion) of the wafer into a plating solution.
  • a drive mechanism and arrangement of plates and pivot joints are used in some embodiments to move wafer the holder 111 along an arced path (not shown) and, as a result, tilt the proximal end of wafer holder 111 (i.e., the cup and cone assembly).
  • a two-component positioning mechanism provides both vertical movement along a trajectory perpendicular to an electrolyte surface and a tilting movement allowing deviation from a horizontal orientation (i.e., parallel to the electrolyte surface) for the wafer (angled-wafer immersion capability).
  • the wafer holder 111 is used with a plating cell 115 having a plating chamber 117 which houses an anode chamber 157 and a plating solution.
  • the chamber 157 holds an anode 119 (e.g., a copper anode) and may include membranes or other separators designed to maintain different electrolyte chemistries in the anode compartment and a cathode compartment.
  • a diffuser 153 is employed for directing electrolyte upward toward the rotating wafer in a uniform front.
  • the flow diffuser is a high resistance virtual anode (HRVA) plate, which is made of a solid piece of insulating material (e.g. plastic), having a large number (e.g.
  • HRVA high resistance virtual anode
  • the plating cell may also include a separate membrane for controlling and creating separate electrolyte flow patterns.
  • a membrane is employed to define an anode chamber, which contains electrolyte that is substantially free of suppressors, accelerators, or other organic plating additives.
  • the plating cell 115 may also include plumbing or plumbing contacts for circulating electrolyte through the plating cell—and against the work piece being plated.
  • the plating cell 115 includes an electrolyte inlet tube 131 that extends vertically into the center of anode chamber 157 through a hole in the center of anode 119 .
  • the cell includes an electrolyte inlet manifold that introduces fluid into the cathode chamber below the diffuser/HRVA plate at the peripheral wall of the chamber (not shown).
  • the inlet tube 131 includes outlet nozzles on both sides (the anode side and the cathode side) of the membrane 153 .
  • This arrangement delivers electrolyte to both the anode chamber and the cathode chamber.
  • the anode and cathode chamber are separated by a flow resistant membrane 153 , and each chamber has a separate flow cycle of separated electrolyte.
  • an inlet nozzle 155 provides electrolyte to the anode-side of membrane 153 .
  • plating cell 115 includes a rinse drain line 159 and a plating solution return line 161 , each connected directly to the plating chamber 117 .
  • a rinse nozzle 163 delivers deionized rinse water to clean the wafer and/or cup during normal operation.
  • Plating solution normally fills much of the chamber 117 .
  • the chamber 117 includes an inner weir 165 for plating solution return and an outer weir 167 for rinse water return. In the depicted embodiment, these weirs are circumferential vertical slots in the wall of the plating chamber 117 .
  • an electroplating clamshell typically includes a lipseal and one or more contact elements to provide sealing and electrical connection functions.
  • a lipseal may be made from an elastomeric material.
  • the lipseal forms a seal with the surface of the semiconductor substrate and excludes the electrolyte from a peripheral region of the substrate. No deposition occurs in this peripheral region and it is not used for forming IC devices, i.e., the peripheral region is not a part of the working surface. Sometimes, this region is also referred to as an edge exclusion area because the electrolyte is excluded from the area.
  • the peripheral region is used for supporting and sealing the substrate during processing, as well as for making electrical connection with the contact elements. Since it is generally desirable to increase the working surface, the peripheral region needs to be as small as possible while maintaining the functions described above. In certain embodiments, the peripheral region is between about 0.5 millimeters and 3 millimeters from the edge of the substrate.
  • the lipseal and contact elements are assembled together with other components of the clamshell.
  • An overall opening provided by this clamshell is comparable to the size of the substrate (e.g., an opening for accommodating 200 mm wafers, 300 mm wafers, 450 mm wafers, etc.).
  • substrates have their own size tolerances (e.g., +/ ⁇ 0.2 millimeters for a typical 300 mm wafer according to the SEMI specification).
  • a particularly difficult task is alignment of the elastomeric lipseal and contact elements, since both are made from relatively flexible materials. These two components need to have very precise relative locations.
  • the wafer to be plated is held in a cup, which makes electrical contact with the edge of the wafer in an area enclosed by a lipseal while exposing the rest of the wafer to the plating solution.
  • the cup is partially immersed in the plating solution in the plating cell during plating.
  • acid can diffuse across a liquid film between the wafer and the lipseal fast enough to damage the metal seed layer on the wafer in the contact area.
  • a hardware design change has been implemented to increase the width of the lipseal (the width of a protrusion on the lipseal which seals against a wafer) to reduce the rate of acid diffusion through a liquid layer between the wafer and the lipseal.
  • the increased width of the lipseal increases the diffusion distance and results in less acid reaching the contact area and thus less etching of the metal seed layer.
  • Lipseal width can be increased by either increasing the outer diameter of the protrusion of the lipseal, or by decreasing the inner diameter of the protrusion.
  • the preferred implementation is to increase the outer diameter of the protrusion, as this does not reduce the area available for plating.
  • the shape of the protrusion on the lipseal can be extended to form a lipseal with a similarly-shaped cross section as previous designs, wherein the protrusion is simply elongated in the radial dimension. This is the preferred implementation.
  • the lipseal can include a single contact surface in the form of an annular rim with cylindrical walls and a flat or angled surface which contacts a wafer.
  • the lipseal design for the Sabre 3D did not prevent appreciable acid diffusion into the contact area at higher temperatures or higher plating solution acid concentrations than present during past standard operating conditions (less than or equal to 35° C., less than or equal to 140 grams per liter acid).
  • An advantage of the wider lipseal is that adequate sealing can be provided in more demanding operating conditions such above 35° C. and/or at higher acid concentrations than 140 grams per liter acid.
  • the lipseal In processing a wafer, when a wet wafer is placed on a lipseal, a thin water layer remains and acid can diffuse through this layer and reach the contact area and attack the metal seed layer on the wafer.
  • the lipseal is configured to provide a longer diffusion path for the acid and thus substantially increase the amount of time needed for etching to occur in the contact area. A longer diffusion path can be achieved through a wider lipseal (longer linear length).
  • 2 ⁇ square root over (Dt) ⁇ the diffusion length
  • C, C s , and z for a given condition, and can be used to find C as a function of z and C s and 2 ⁇ square root over (Dt) ⁇ can be expected to remain approximately constant as long as time, temperature, and the diffusing species remains the same.
  • C is estimated to be approx. 8-9 g/L after a 1.5 h plating time, yielding 2 ⁇ square root over (Dt) ⁇ 0.014′′ and 2 ⁇ square root over (Dt) ⁇ can be used to estimate post-plating sulfuric acid concentration at other lipseal widths, as shown in the graph depicted in FIG. 5 .
  • C reaches 1 g/L (approximate level at which negligible corrosion occurs over 1.5 h) at approximately 0.028 inch lipseal width, and falls rapidly after that.
  • a preferred lipseal width is at least 0.032 inch and more preferably at least about 0.034 inch.
  • FIG. 3 shows an embodiment of the lipseal 212 mounted on a cup 201 with electrical contacts 208 engaging an underside of a semiconductor substrate such as a wafer W.
  • the lipseal 212 includes an inner portion 218 having a protrusion 220 having an upper surface 220 a in contact with an underside of the wafer W and an outer portion 230 having a rim 232 which engages a recess 201 a in the cup 201 .
  • the protrusion 220 extends axially upward and has a width (measured radially between inner and outer cylindrical walls of the protrusion) sufficient to inhibit diffusion of acid in the plating solution from reaching the point of contact between the electrical contacts 208 and the wafer W.
  • the width of the protrusion 220 can be at least about 0.032 inch, preferably at least about 0.034 inch.
  • the lipseal 212 is preferably an integral piece made entirely of elastomeric material which is configured to mate with the cup 201 . Thus, the lipseal 212 is a separate consumable part which can be easily replaced when desired.
  • FIGS. 6 a - c are photos of the outer edges of wafers which were processed under different conditions.
  • FIG. 6 a shows a wafer which was plated without pre-wetting and because the lipseal provided an adequate seal which prevented acid from diffusion past it, the copper seed layer at the wafer's edge is not corroded. A scratch is visible on the copper seed layer which resulted from the electrical contact used during electroplating.
  • FIG. 6 b shows a wafer which was plated with pre-wetting and a 0.028 inch wide lipseal which did not provide an adequate seal. The pre-wetting formed a water film between the wafer and lipseal which allowed acid to diffuse past it and corrode the copper seed layer at the wafer's edge.
  • FIG. 6 a shows a wafer which was plated without pre-wetting and because the lipseal provided an adequate seal which prevented acid from diffusion past it, the copper seed layer at the wafer's edge is not corroded. A scratch is visible on the copper seed layer
  • FIG. 6 c shows a wafer which was plated with pre-wetting and a 0.034 inch wide lipseal which provided an adequate seal. Due to the wider lipseal which created a longer diffusion path, the copper seed layer suffered only minor corrosion as the copper seed layer is visible and a very thin layer of copper oxide on the surface of the copper seed layer creates a minor discoloration in the image.
US15/446,631 2017-03-01 2017-03-01 Wide lipseal for electroplating Abandoned US20180251907A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US15/446,631 US20180251907A1 (en) 2017-03-01 2017-03-01 Wide lipseal for electroplating
KR1020180023598A KR20180100488A (ko) 2017-03-01 2018-02-27 전기도금을 위한 와이드 립시일
SG10201801584QA SG10201801584QA (en) 2017-03-01 2018-02-27 Wide lipseal for electroplating
TW107106485A TW201841301A (zh) 2017-03-01 2018-02-27 電鍍用寬唇形密封
JP2018034439A JP2018145524A (ja) 2017-03-01 2018-02-28 電気メッキのための幅広リップシール
CN201810166071.7A CN108531953B (zh) 2017-03-01 2018-02-28 用于电镀的宽唇形密封件
KR1020230145988A KR20230153982A (ko) 2017-03-01 2023-10-27 전기도금을 위한 와이드 립시일

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/446,631 US20180251907A1 (en) 2017-03-01 2017-03-01 Wide lipseal for electroplating

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US20180251907A1 true US20180251907A1 (en) 2018-09-06

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US15/446,631 Abandoned US20180251907A1 (en) 2017-03-01 2017-03-01 Wide lipseal for electroplating

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US (1) US20180251907A1 (ko)
JP (1) JP2018145524A (ko)
KR (2) KR20180100488A (ko)
CN (1) CN108531953B (ko)
SG (1) SG10201801584QA (ko)
TW (1) TW201841301A (ko)

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WO2020236497A1 (en) * 2019-05-17 2020-11-26 Lam Research Corporation Substrate sticking and breakage mitigation

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JP7132135B2 (ja) * 2019-01-23 2022-09-06 上村工業株式会社 ワーク保持治具及び電気めっき装置
JP7132136B2 (ja) * 2019-01-23 2022-09-06 上村工業株式会社 ワーク保持治具及び電気めっき装置
JP7132134B2 (ja) * 2019-01-23 2022-09-06 上村工業株式会社 ワーク保持治具及び電気めっき装置
US11352711B2 (en) * 2019-07-16 2022-06-07 Applied Materials, Inc. Fluid recovery in semiconductor processing
US20230012414A1 (en) * 2019-11-27 2023-01-12 Lam Research Corporation Edge removal for through-resist plating
WO2023067650A1 (ja) * 2021-10-18 2023-04-27 株式会社荏原製作所 めっき方法及びめっき装置
TWI803026B (zh) * 2021-10-25 2023-05-21 日商荏原製作所股份有限公司 鍍覆方法及鍍覆裝置

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US20090107836A1 (en) * 2007-10-30 2009-04-30 Novellus Systems, Inc. Closed Contact Electroplating Cup Assembly

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US8172992B2 (en) * 2008-12-10 2012-05-08 Novellus Systems, Inc. Wafer electroplating apparatus for reducing edge defects
US9228270B2 (en) * 2011-08-15 2016-01-05 Novellus Systems, Inc. Lipseals and contact elements for semiconductor electroplating apparatuses
JP6745103B2 (ja) * 2014-11-26 2020-08-26 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体電気メッキ装置用のリップシールおよび接触要素

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US20090107836A1 (en) * 2007-10-30 2009-04-30 Novellus Systems, Inc. Closed Contact Electroplating Cup Assembly

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Also Published As

Publication number Publication date
TW201841301A (zh) 2018-11-16
CN108531953B (zh) 2022-07-12
CN108531953A (zh) 2018-09-14
KR20230153982A (ko) 2023-11-07
SG10201801584QA (en) 2018-10-30
KR20180100488A (ko) 2018-09-11
JP2018145524A (ja) 2018-09-20

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