US20180053910A1 - Optical device - Google Patents

Optical device Download PDF

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Publication number
US20180053910A1
US20180053910A1 US15/795,856 US201715795856A US2018053910A1 US 20180053910 A1 US20180053910 A1 US 20180053910A1 US 201715795856 A US201715795856 A US 201715795856A US 2018053910 A1 US2018053910 A1 US 2018053910A1
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United States
Prior art keywords
conductive film
interconnection
electrode
lead
constituted
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Abandoned
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US15/795,856
Inventor
Kenichi Okuyama
Yuji Saito
Hiroki Tan
Masanobu Akagi
Kunihiko Shirahata
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Tohoku Pioneer Corp
Pioneer Corp
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Tohoku Pioneer Corp
Pioneer Corp
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Priority to US15/795,856 priority Critical patent/US20180053910A1/en
Assigned to PIONEER CORPORATION, TOHOKU PIONEER CORPORATION reassignment PIONEER CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SAITO, YUJI, TAN, HIROKI, AKAGI, MASANOBU, OKUYAMA, KENICHI, SHIRAHATA, KUNIHIKO
Publication of US20180053910A1 publication Critical patent/US20180053910A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H01L51/5212—
    • H01L51/0037—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

Definitions

  • the present invention relates to an optical device that uses an optical element such as a liquid crystal element and an organic EL (electroluminescence) element.
  • an optical element such as a liquid crystal element and an organic EL (electroluminescence) element.
  • an optical device is used as various illuminating devices or displays. Generally, it is necessary for the optical device to have a joining structure that joins different materials such as terminals and interconnections for transmission of an electrical signal that drives the optical element.
  • the organic EL element which is an example of an optical element, includes a transparent electrode, another electrode that is disposed to face the transparent electrode, and an organic layer that is interposed between the electrodes.
  • Patent Document 1 and Patent Document 2 As a technology relating to the organic EL element, for example, there are technologies which are described in Patent Document 1 and Patent Document 2.
  • Patent Document 1 discloses a configuration in which a negative electrode that is constituted by a metal electrode layer, and a metal lead-out electrode layer are fused and joined at the connection portion through localized heating with laser light.
  • Patent Document 2 describes a light-emitting element including an electrode that is constituted by a metal line that is formed in a linear shape, and a polymer line that covers an upper surface and a lateral surface of the metal line.
  • Patent Document 1 Japanese Unexamined Patent Application Publication No. 2003-264064
  • Patent Document 2 Japanese Unexamined Patent Application Publication No. 2006-93123
  • a problem to be solved by the invention is to reduce power consumption of the optical device by improving the connection reliability between two conductive films which are joined to each other.
  • an optical device including a joining structure in which a first conductive film that is constituted by a conductive material and a second conductive film that is constituted by a metal material are joined to each other.
  • a transition region in which the conductive material and the metal material are mixed, exists between the first conductive film and the second conductive film.
  • FIG. 1 is a plan view illustrating a light-emitting device according to a first embodiment.
  • FIG. 2 is a cross-sectional view taken along line A-A in FIG. 1 .
  • FIG. 3 is a cross-sectional view taken along line B-B in FIG. 1 .
  • FIG. 4 is a view illustrating a part of the light-emitting device illustrated in FIG. 1 .
  • FIG. 5 is a view illustrating a part of the light-emitting device illustrated in FIG. 1 .
  • FIG. 6 is a view illustrating an example of a joining structure that is constituted by a first conductive film and a second conductive film in the first embodiment.
  • FIG. 7 is a view illustrating an example of a joining structure that is constituted by the first conductive film and the second conductive film in the first embodiment.
  • FIG. 8 is a plan view illustrating a light-emitting device according to a second embodiment.
  • FIG. 9 is a cross-sectional view taken along line C-C in FIG. 8 .
  • FIG. 10 is a cross-sectional view taken along line D-D in FIG. 8 .
  • FIG. 11 is a view illustrating a part of the light-emitting device illustrated in FIG. 8 .
  • FIG. 12 is a plan view illustrating a configuration of a light-emitting device according to a third embodiment.
  • FIG. 13 is a cross-sectional view illustrating a configuration of an optical device according to a fourth embodiment.
  • FIG. 14 is a plan view of the optical device.
  • FIG. 1 is a plan view illustrating an optical device 10 according to a first embodiment.
  • FIG. 2 is a cross-sectional view taken along line A-A in FIG. 1
  • FIG. 3 is a cross-sectional view taken along line B-B in FIG. 1 .
  • FIGS. 4 and 5 are views illustrating a part of the optical device 10 illustrated in FIG. 1 .
  • FIG. 4 particularly, a positional relationship between a first conductive film 110 and a second conductive film 130 is illustrated.
  • FIG. 5 a configuration of an insulating layer 120 is illustrated.
  • FIGS. 6 and 7 are views illustrating an example of a joining structure 200 that is constituted by the first conductive film 110 and the second conductive film 130 in this embodiment.
  • the optical device 10 is, for example, a light-emitting device such as an illuminating device and a display.
  • description will be given of the optical device 10 as a light-emitting device 10 .
  • the joining structure 200 has a configuration in which the first conductive film 110 constituted by a transparent conductive material and a second conductive film 130 constituted by a metal material are joined to each other.
  • a transition region in which the transparent conductive material and the metal material are mixed, exists between the first conductive film 110 and the second conductive film 130 .
  • the light-emitting device 10 includes the joining structure 200 .
  • the light-emitting device 10 includes an organic EL element 20 , a first interconnection 114 and a lead-out interconnection 134 .
  • the organic EL element 20 includes a first electrode 112 , a second electrode 152 , and an organic layer 140 that is disposed between the first electrode 112 and the second electrode 152 .
  • the first interconnection 114 is electrically connected to the first electrode 112 , and is constituted by the first conductive film 110 .
  • the lead-out interconnection 134 is joined to the first interconnection 114 , and is constituted by the second conductive film 130 .
  • the joining structure 200 is a joining structure in which the first conductive film 110 and the second conductive film 130 are joined to each other. Further, in this specification, the joining between the first conductive film 110 and the second conductive film 130 includes a case where another configuration is interposed between the first conductive film 110 and the second conductive film 130 .
  • the joining structure 200 is formed, for example, on a substrate 100 .
  • the first conductive film 110 and the second conductive film 130 are formed on the substrate 100 .
  • the joining structure 200 constitutes a light-emitting device that includes an organic EL element.
  • the light-emitting device includes an organic EL element, a first interconnection that is electrically connected to an electrode that constitutes the organic EL element, and a lead-out interconnection that is electrically connected to the first interconnection.
  • an electrical signal which controls light-emission and non-light-emission, is supplied to the electrode that constitutes the organic EL element from the outside through the lead-out interconnection and the first interconnection.
  • the first conductive film 110 in the joining structure 200 constitutes, for example, the first interconnection that is connected to the electrode that constitutes the organic EL element.
  • the second conductive film 130 in the joining structure 200 constitutes, for example, a lead-out interconnection.
  • the joining structure 200 is formed between the first interconnection and the lead-out interconnection.
  • the first conductive film 110 substantially includes a conductive material.
  • the conductive material, which constitutes the first conductive film 110 include a transparent conductive material, and paste-like conductive materials such as silver. Among these, the transparent conductive material is particularly preferable.
  • the first conductive film 110 is constituted by the transparent conductive material, a conductive film having transparency is obtained.
  • the first conductive film 110 has a shape that extends in a direction parallel to a plane of the substrate 100 .
  • the transparent conductive material includes an inorganic material such as indium tin oxide (ITO) and indium zinc oxide (IZO), or a conductive polymer.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • the first conductive film 110 can be formed by using a coating method. In this case, in a process of forming the first conductive film 110 , it is possible to suppress a thermal load from being applied to other configurations such as the substrate 100 .
  • the first conductive film 110 is a coating-type conductive film that is formed through application of a solution in which the inorganic material is dispersed in an organic solvent. Even in this case, the first conductive film 110 can be formed by using the coating method.
  • examples of the conductive polymer which is included in the transparent conductive material that constitutes the first conductive film 110 , include a conductive polymer that includes a n-conjugated conductive polymer and a polyanion. In this case, it is possible to form the first conductive film 110 that is particularly excellent in conductivity, heat resistance, and flexibility.
  • examples of the n-conjugated conductive polymer that can be used include chain-line conductive polymers such as polythiophenes, polypyrroles, polyindoles, polycarbazoles, polyanilines, polyacetylenes, polyfurans, polyparaphenylene vinylenes, polyazulenes, polyparaphenylenes, polyparaphenylene sulfides, polyisothianaphthenes, and polythiazyls.
  • the polythiophenes or the polyanilines are preferable from the viewpoints of conductivity, transparency, stability, and the like, and polyethylenedioxythiophene is more preferable.
  • polyanion examples include polyvinyl sulfonic acid, polystyrene sulfonic acid, polyallyl sulfonic acid, polyacrylic acid ethyl sulfonic acid, polyacrylic acid butyl sulfonic acid, poly-2-acrylamide-2-methylpropane sulfonic acid, polyisoprene sulfonic acid, polyvinyl carboxylic acid, polystyrene carboxylic acid, polyallyl carboxylic acid, polyacrylic carboxylic acid, polymethacrylic carboxylic acid, poly-2-acrylamide-2-methylpropane carboxylic acid, polyisoprene carboxylic acid, and polyacrylic acid.
  • the polyanions, which can be used in this embodiment may be homopolymers thereof, or copolymers of two or more kinds thereof.
  • the transparent conductive material may further contain a cross-linking agent, a leveling agent, a antifoaming agent, and the like.
  • the second conductive film 130 includes a metal material.
  • a metal material having electric resistance lower than that of the transparent conductive material that constitutes the first conductive film 110 is used.
  • the first conductive film 110 and the second conductive film 130 are constituted by materials different from each other.
  • the metal material which is included in the second conductive film 130 , include Ag, Al, Cr, Mo, Ni, Nb, Ti, W, Au, Pt, Cu, and Pd.
  • the second conductive film 130 is, for example, a sintered body that is obtained through sintering of metal particles.
  • the aspect in which the transparent conductive material and the metal material are mixed includes an aspect in which the metal material that constitutes the second conductive film 130 is spread into the first conductive film 110 .
  • the aspect in which the metal material is spread into the first conductive film 110 includes both a case where the a continuous body of the metal material, which is connected to the second conductive film 130 and extends toward the first conductive film 110 , is formed, and a case where the metal material separated from the second conductive film 130 is dispersed inside the first conductive film 110 .
  • the transparent conductive material which constitutes the first conductive film 110
  • the transparent conductive material may be spread into the second conductive film 130 .
  • the aspect in which the transparent conductive material is spread into the second conductive film 130 includes both a case where a continuous body of the transparent conductive material, which is connected to the first conductive film 110 and extends toward the second conductive film 130 , is formed, and a case where the transparent conductive material separated from the first conductive film 110 is dispersed inside the second conductive film 130 .
  • the transition region represents a region that occupies a constant space between the first conductive film 110 and the second conductive film 130 .
  • the transparent conductive material and the metal material exist in all cross-sections having a normal line that extends in an extension direction of the first conductive film 110 , and in any of all planes parallel to the plane of the substrate 100 .
  • a transition region, in which the transparent conductive material that constitutes the first conductive film 110 and the metal material that constitutes the second conductive film 130 are mixed exists between the first conductive film 110 and the second conductive film 130 .
  • a contact area between the first conductive film 110 and the second conductive film 130 increases, and thus it is possible to reduce contact resistance therebetween. Accordingly, it is possible to improve contact reliability between the first conductive film 110 and the second conductive film 130 .
  • the first conductive film 110 overlaps the second conductive film 130 , for example, when seen in a plan view.
  • the transition region in which the transparent conductive material and the metal material are mixed is formed.
  • the joining structure 200 in which the first conductive film 110 and the second conductive film 130 are joined to each other, includes the stacking region.
  • the first conductive film 110 is formed in such a manner that one end of the first conductive film 110 overlaps a part of the second conductive film 130 , and thus the stacking region is formed.
  • the first conductive film 110 is formed to cover a part of each of an upper surface and a lateral surface of the second conductive film 130 .
  • FIGS. 6 and 7 illustrate a configuration of the stacking region in which the first conductive film 110 and the second conductive film 130 are stacked on each other.
  • FIG. 6 An example illustrated in FIG. 6 is an example in which only a part of the metal material that constitutes a portion of the second conductive film 130 , which is located in the stacking region, is spread into the first conductive film 110 . At this time, only a part of the transparent conductive material that constitutes a portion of the first conductive film 110 , which is located in the stacking region, is spread into the second conductive film 130 . In the stacking region, both of the first conductive film 110 and the second conductive film 130 maintain a film shape.
  • FIG. 7 illustrates an example in which a degree of diffusion of the metal material to the inside of the first conductive film 110 in the stacking region is greater than that in the example illustrated in FIG. 6 .
  • a degree of diffusion of the transparent conductive material to the inside of the second conductive film 130 in the stacking region is also greater than that in the example illustrated in FIG. 6 .
  • the film thickness of the second conductive film 130 in the stacking region becomes smaller in comparison to, for example, the case illustrated in FIG. 6 .
  • the film thickness of the first conductive film 110 in the stacking region also becomes smaller in comparison to the case illustrated in FIG. 6 .
  • a linked body may be formed, in which metal particles dispersed to the inside of the first conductive film 110 from the second conductive film 130 are subjected to grain growth and become connected to each other.
  • a protrusion constituted by the linked body is formed on a surface of the second conductive film 130 .
  • the linked body may have, for example, a dendritic shape.
  • metal particles which are spread from the second conductive film 130 to the inside of the first conductive film 110 and are separated from the second conductive film 130 , exist at the inside of the first conductive film 110 .
  • a degree of spreading of the transparent conductive material and the metal material in the transition region is not particularly limited. As illustrated in FIGS. 6 and 7 , the transparent conductive material and the metal material may be spread to a certain extent at which at least a part of the first conductive film 110 and at least a part of the second conductive film 130 are capable of maintaining a film shape. In addition, the transparent conductive material and the metal material may be spread to a certain extent at which the first conductive film 110 and the second conductive film 130 do not maintain the film shape.
  • the joining structure 200 in which the first conductive film 110 and the second conductive film 130 are joined to each other, is formed as follows.
  • the second conductive film 130 is formed on the substrate 100 .
  • the second conductive film 130 is formed by applying a coating solution containing metal particles onto the substrate 100 by using a coating method.
  • the coating method that is used in the process is not particularly limited and examples thereof include an ink-jet method, a screen printing method, a spray coating method, and a dispenser coating method.
  • the coating solution, which is used in the process of forming the second conductive film 130 includes a binder resin and an organic solvent.
  • the binder resin for example, a cellulose-based resin, an epoxy-based resin, or an acryl-based resin can be used.
  • the organic solvent for example, a hydrocarbon-based solvent, or an alcohol-based solvent can be used.
  • examples of the metal particles, which are contained in the coating solution include Ag, Al, Cr, Mo, Ni, Nb, Ti, W, Au, Pt, Cu, or Pd.
  • the first conductive film 110 is formed on the substrate 100 .
  • the first conductive film 110 is formed by applying a coating solution that contains the transparent conductive material onto the substrate 100 , and drying the coating solution.
  • the first conductive film 110 is formed to cover a part of the second conductive film 130 .
  • the coating solution that contains the transparent conductive material is applied onto the substrate 100 by using an ink-jet method, a screen printing method, a letterpress printing method, a gravure printing method, die coating, spin coating, or spraying.
  • the coating solution that contains the transparent conductive material, which is used in the process of forming the first conductive film 110 includes an organic solvent, water, or the like in addition to the above-described transparent conductive material.
  • the organic solvent for example, an alcohol-based solvent can be used.
  • the process of forming the first conductive film 110 is carried out, for example, in a non-sintered state in which the second conductive film 130 has not been sintered.
  • metal particles are spread to the inside of the first conductive film 110 from the second conductive film 130 in a non-sintered state.
  • the transparent conductive material is spread to the inside of the second conductive film 130 from the first conductive film 110 .
  • the transition region in which the transparent conductive material and the metal material are mixed, is formed between the first conductive film 110 and the second conductive film 130 .
  • the second conductive film 130 is sintered, and the first conductive film 110 is dried.
  • the transparent conductive material includes a conductive polymer
  • the first conductive film 110 is dried, a cohesive force of the conductive polymer increases and thus it is possible to form the first conductive film 110 as a strong film.
  • the first conductive film 110 is cured. This heat treatment is carried out, for example, under conditions of 120° C. to 250° C. and 2 minutes to 60 minutes.
  • the first conductive film 110 may be cured through UV irradiation.
  • the heat treatment is carried out in a state in which the metal particles are spread to the inside of the first conductive film 110 from the second conductive film 130 in a non-sintered state.
  • the metal particles, which are spread to the inside of the first conductive film 110 may be subjected to grain growth by the heat treatment, thus forming a linked body in which the metal particles are connected to each other.
  • a linked body, in which the metal particles are connected to each other after grain growth is formed in the second conductive film 130 .
  • FIG. 1 illustrates a case in which the light-emitting device 10 is a display.
  • the light-emitting device 10 may be an illuminating device.
  • the light-emitting device 10 is an illuminating device, for example, the light-emitting device 10 has a configuration in which a plurality of linear organic layers 140 having light emission colors different from each other are repetitively arranged. According to this, an illuminating device, which is excellent in color rendering properties, is realized.
  • the light-emitting device 10 which is the illuminating device, may include a sheet-shaped organic layer 140 .
  • the substrate 100 is a transparent substrate.
  • the substrate 100 may be configured as a glass substrate. According to this, it is possible to manufacture the light-emitting device 10 excellent in heat resistance and the like at a low cost.
  • the substrate 100 may be a film-shaped substrate that is constituted by a resin material. In this case, particularly, it is possible to realize a display with high flexibility.
  • the resin material that constitutes the film-shaped substrate include polyethylene terephthalate, polyethylene naphthalate, and polycarbonate.
  • the substrate 100 may be a combination of glass and a resin material. According to this embodiment, even when the optical device (light-emitting device 10 ) has flexibility, connection reliability in the joining structure 200 constituted by the first conductive film 110 and the second conductive film 130 is high, and thus an effect of reducing power consumption is high.
  • the light-emitting device 10 which is a display, includes a plurality of the organic EL elements 20 which are arranged in an array shape on the substrate 100 .
  • Each of the organic EL elements 20 includes the first electrode 112 that is provided on the substrate 100 , the organic layer 140 that is provided on the first electrode 112 , and the second electrode 152 that is provided on the organic layer 140 .
  • the organic layer 140 is interposed between the first electrode 112 and the second electrode 152 .
  • a plurality of the first electrodes 112 which extend in a Y-direction in the drawing, and a plurality of the second electrodes 152 which extend in an X-direction in the drawing are provided on the substrate 100 .
  • the organic EL element 20 is formed at each portion in which each of the first electrodes 112 and each of the second electrodes 152 overlap each other when seen in a plan view. According to this, a plurality of the organic EL elements 20 , which are arranged in an array shape, are formed on the substrate 100 .
  • the first electrode 112 becomes, for example, a positive electrode of the organic EL element.
  • the first electrode 112 becomes a transparent electrode that is transparent or translucent with respect to a wavelength of light emitted from a light-emitting layer 144 of the organic layer 140 to be described later.
  • the first electrode 112 is provided to extend in a linear shape in the Y-direction in the drawing.
  • the plurality of first electrodes 112 which are spaced away from each other, are arranged on the substrate 100 in a direction (X-direction in the drawing) perpendicular to the extension direction of the first electrodes 112 .
  • the plurality of first electrodes 112 are spaced away from each other.
  • the pixel region 300 is a region including the plurality of organic EL elements 20 .
  • a region surrounded by a one-dot chain line corresponds to the pixel region 300 .
  • the first electrode 112 is constituted by a transparent conductive material.
  • a transparent conductive material which is the same as the transparent conductive material that constitutes the first conductive film 110 , can be used. According to this, the first electrode 112 can have transparency.
  • the first interconnection 114 is provided on the substrate 100 .
  • a case where the first interconnection 114 is electrically connected to the first electrode 112 is exemplified.
  • a plurality of the first interconnections 114 which are respectively connected to different ones of the first electrodes 112 , are provided on the substrate 100 .
  • each of the plurality of first electrodes 112 in this embodiment is connected to the lead-out interconnection 134 through each of the first interconnections 114 .
  • the first interconnection 114 is constituted by the first conductive film 110 that is constituted by a transparent conductive material. According to this, the first interconnection 114 can have transparency.
  • the first electrode 112 and the first interconnection 114 are integrally provided on the substrate 100 .
  • the first interconnection 114 and the first electrode 112 are constituted by the first conductive film 110 .
  • a portion of the first conductive film 110 which is located in the pixel region 300 including the plurality of organic EL elements 20 , becomes the first electrode 112 .
  • a portion of the first conductive film 110 which is located outside the pixel region 300 , becomes the first interconnection 114 .
  • the first electrode 112 is connected to the lead-out interconnection 134 through the first interconnection 114 .
  • a plurality of first conductive films 110 which extend in the Y-direction in the drawing, are provided on the substrate 100 .
  • the plurality of first conductive films 110 are arranged in the X-direction in the drawing so as to be spaced away from each other.
  • a portion of the first conductive film 110 which is located further on an end side that is connected to the lead-out interconnection 134 than the pixel region 300 indicated by the one-dot chain line, becomes the first interconnection 114 .
  • the lead-out interconnection 134 is provided on the substrate 100 .
  • each of the lead-out interconnections 134 is connected to each of the first interconnections 114 .
  • each of the plurality of first interconnections 114 is connected to an external side through each of the lead-out interconnections 134 .
  • a signal for light-emission or non-light-emission is supplied to the organic EL element 20 through the first interconnection 114 and the lead-out interconnection 134 .
  • the lead-out interconnection 134 is constituted by the second conductive film 130 that is constituted by a metal material. According to this, in a case where the lead-out interconnection 134 and the first interconnection 114 are connected to each other, the first interconnection 114 that is constituted by the first conductive film 110 and the lead-out interconnection 134 that is constituted by the second conductive film 130 are joined to each other, thereby forming the joining structure 200 .
  • the joining structure 200 is formed at a portion that is surrounded by a broken line.
  • the first interconnection 114 is connected to the lead-out interconnection 134 at one end. At this time, for example, the first interconnection 114 and the lead-out interconnection 134 are joined to each other at the one end, thereby forming the joining structure 200 .
  • the first interconnection 114 extends in a first direction when seen from the lead-out interconnection 134 . Further, the first direction in this embodiment indicates, for example, the Y-direction in the drawing.
  • a part of the first interconnection 114 overlaps, for example, the lead-out interconnection 134 when seen in a plan view.
  • a transition region in which a transparent conductive material and a metal material are mixed, is formed in a stacking region in which the first interconnection 114 that is constituted by the first conductive film 110 and the lead-out interconnection 134 that is constituted by the second conductive film 130 are stacked on each other.
  • the joining structure 200 in which the first conductive film 110 and the second conductive film 130 are joined to each other, includes the stacking region.
  • the first interconnection 114 is formed in such a manner that one end of the first interconnection 114 overlaps a part of the lead-out interconnection 134 , thereby forming the stacking region.
  • the first interconnection 114 is formed to cover each of parts of an upper surface and a lateral surface of the lead-out interconnection 134 .
  • FIG. 4 illustrates a case where only an end of the lead-out interconnection 134 on a pixel region 300 side overlaps the first interconnection 114 when seen in a plan view.
  • the end of the lead-out interconnection 134 on the pixel region 300 side is covered with the first interconnection 114 and the other portion is exposed without being covered with the first interconnection 114 .
  • the lead-out interconnection 134 is covered with the first interconnection 114 , for example, at a part of the upper surface, an end surface that faces the pixel region 300 , and a part of two lateral surfaces which are adjacent to the end surface.
  • the insulating layer 120 is provided on the substrate 100 to cover the first electrode 112 .
  • the insulating layer 120 is provided to cover, for example, a part of each of the first electrode 112 , the first interconnection 114 , and a lead-out interconnection 164 to be described later.
  • the insulating layer 120 is a photo-sensitive resin such as a polyimide-based resin, and is formed in a desired pattern through exposure and development.
  • the insulating layer 120 may be constituted by a resin material other than the polyimide-based resin, and may be an epoxy-based resin or an acryl-based resin.
  • the insulating layer 120 is provided with, for example, a plurality of first openings 122 . As illustrated in FIG. 5 , the first openings 122 are formed to constitute, for example, a matrix.
  • the plurality of first openings 122 are formed to be located on the first electrode 112 .
  • the plurality of first openings 122 are arranged in the Y-direction with a predetermined gap therebetween.
  • the plurality of first openings 122 are provided at a position that overlaps a second electrode 152 that extends in a direction (X-direction in the drawing) orthogonal to the first electrode 112 . According to this, the plurality of first openings 122 are arranged to constitute a matrix.
  • a plurality of second openings 124 are provided in the insulating layer 120 .
  • the second openings 124 are provided to be located on the lead-out interconnection 164 .
  • the plurality of second openings 124 are arranged along one side of a matrix constituted by the first openings 122 .
  • the second openings 124 are disposed at the same interval as the first openings 122 .
  • a partition wall 170 is provided on the insulating layer 120 .
  • the partition wall 170 is provided to extend in the X-direction in the drawing. That is, the partition wall 170 is formed along an extension direction of the second electrode 152 . In addition, a plurality of the partition walls 170 are provided to be arranged in the Y-direction in the drawing.
  • the partition wall 170 is a photo-sensitive resin such as a polyimide-based resin, and is formed in a desired pattern through exposure and development. Further, the partition wall 170 may be constituted by a resin material other than the polyimide-based resin, and may be an epoxy-based resin or an acryl-based resin.
  • a cross-section of the partition wall 170 has a shape (inverted trapezoidal shape) in which an upper side and a lower side of a trapezoid are inverted from each other. That is, a width of the upper surface of the partition wall 170 is greater than, for example, a width of a bottom surface of the partition wall 170 .
  • a sputtering method a sputtering method, a deposition method, and the like
  • a planar shape of the partition wall 170 is not limited to a shape illustrated in FIG. 1 . Accordingly, by changing the planar shape of the partition wall 170 , it is possible to freely change a planar pattern of the plurality of second electrodes 152 which are separated from each other by the partition wall 170 .
  • the organic layer 140 is formed in the first openings 122 .
  • the organic layer 140 is constituted by a stacked body in which a hole injection layer 142 , a light-emitting layer 144 , and an electron injection layer 146 are sequentially stacked. At this time, the hole injection layer 142 comes into contact with the first electrode 112 , and the electron injection layer 146 comes into contact with the second electrode 152 . According to this, the organic layer 140 is interposed between the first electrode 112 and the second electrode 152 .
  • a hole transport layer may be formed between the hole injection layer 142 and the light-emitting layer 144
  • an electron transport layer may be formed between the light-emitting layer 144 and the electron injection layer 146 .
  • the organic layer 140 may not be provided with the hole injection layer 142 .
  • the partition wall 170 is provided on the insulating layer 120 .
  • the organic layers 140 are separated from each other in the Y-direction in the drawing.
  • a stacked film which is constituted by the same material as in the organic layer 140 , is formed on the partition wall 170 .
  • the respective layers, which constitute the organic layer 140 are provided to be continuous between the first openings 122 adjacent to each other in the X-direction in the drawing in which the partition wall 170 extends.
  • the second electrode 152 is provided on the organic layer 140 .
  • the second electrode 152 becomes a negative electrode of the organic EL element.
  • the second electrode 152 is provided to extend in a linear shape in the X-direction in the drawing.
  • a plurality of the second electrodes 152 which are spaced away from each other, are arranged on the substrate 100 in a direction (Y-direction in the drawing) perpendicular to the extension direction of the second electrodes 152 .
  • the second electrode 152 is constituted by a metal material such as tin, magnesium, indium, calcium, aluminum, silver, and alloys thereof. These materials may be used alone or in an arbitrary combination of two or more kinds thereof. Further, in a case where the second electrode 152 is a negative electrode, it is preferable that the second electrode 152 is constituted by a conductive material having a work function that is smaller than that of the first electrode 112 that is a positive electrode.
  • a second interconnection 154 is provided on the substrate 100 .
  • the second interconnection 154 is connected to either the first electrode 112 or the second electrode 152 which is not connected to the first interconnection 114 . According to this, either the first electrode 112 or the second electrode 152 , which is connected to the second interconnection 154 , is connected to the outside through the second interconnection 154 .
  • each of the plurality of second electrodes 152 in this embodiment is connected to the outside through each of the second interconnections 154 . Further, for example, apart of the second interconnection 154 is embedded in the second opening 124 , and is connected to the lead-out interconnection 164 to be described later.
  • the second interconnection 154 is constituted by a metal material.
  • the metal material that constitutes the second interconnection 154 for example, the same metal material as in the second electrode 152 can be used.
  • the second electrode 152 and the second interconnection 154 are integrally provided on the organic layer 140 , and constitute a conductive film 150 .
  • a portion of the conductive film 150 which is located in the pixel region 300 including the plurality of organic EL elements 20 , becomes the second electrode 152 .
  • a portion of the conductive film 150 which is located outside the pixel region 300 , becomes the second interconnection 154 .
  • the second electrode 152 is connected to the lead-out interconnection 164 through the second interconnection 154 .
  • a region surrounded by a one-dot chain line corresponds to the pixel region 300 .
  • a plurality of the conductive films 150 which extend in the X-direction in the drawing, are provided on the organic layer 140 .
  • the plurality of conductive films 150 are arranged in the Y-direction in the drawing so as to be spaced away from each other.
  • a portion of each of the conductive films 150 which is located further on an end side that is connected to the lead-out interconnection 164 than the pixel region 300 , becomes the second interconnection 154 .
  • the plurality of conductive films 150 are collectively formed on the organic layer 140 by using a sputtering method, a deposition method, and the like. Even in this case, in this embodiment, the partition wall 170 is formed on the insulating layer 120 . Accordingly, the conductive films 150 which are provided in a plurality of regions interposed between adjacent partition walls 170 are separated from each other in the Y-direction in the drawing.
  • the plurality of conductive films 150 which are arranged in the Y-direction in the drawing to be spaced away from each other and extend in the X-direction in the drawing.
  • a film that is constituted by the same material as in the conductive film 150 is formed on each of the partition walls 170 .
  • the lead-out interconnection 164 is provided on the substrate 100 .
  • the second interconnection 154 is connected to the outside through the lead-out interconnection 164 .
  • the second electrode 152 is connected to the outside through the second interconnection 154 and the lead-out interconnection 164 , allowing a signal to be supplied thereto.
  • the lead-out interconnection 164 is constituted by a metal material.
  • the metal material that constitutes the lead-out interconnection 164 for example, the same metal material as in the lead-out interconnection 134 can be used.
  • the lead-out interconnection 164 can be formed simultaneously with the lead-out interconnection 134 . According to this, it is possible to suppress an increase in the number of manufacturing processes of the light-emitting device 10 .
  • an end of the lead-out interconnection 134 or 164 forms a terminal portion of the light-emitting device 10 .
  • the terminal portion is electrically connected to an external circuit.
  • An anisotropic conductive film (ACF) or a bonding wire is used for connection between the terminal portion and the outside.
  • ACF anisotropic conductive film
  • connection reliability in the joining structure 200 that is constituted by the first conductive film 110 and the second conductive film 130 is high, and thus an effect of reducing power consumption is high.
  • the lead-out interconnection 134 is formed on the substrate 100 .
  • the lead-out interconnection 134 is formed by applying a coating solution that contains metal particles on the substrate 100 by using a coating method.
  • the lead-out interconnection 134 is constituted by the second conductive film 130 .
  • the lead-out interconnection 134 is formed by using a method of forming the above-described second conductive film 130 and a material that constitutes the second conductive film 130 .
  • the lead-out interconnection 164 is formed on the substrate 100 simultaneously with the process of forming the lead-out interconnection 134 .
  • the lead-out interconnection 164 is formed by the same method and the same material as those of the lead-out interconnection 134 .
  • the first interconnection 114 is formed on the substrate 100 .
  • the first interconnection 114 is formed by applying a coating solution that contains a transparent conductive material on the substrate 100 , and by drying the coating solution.
  • the first interconnection 114 is the first conductive film 110 .
  • the first interconnection 114 is formed by using, for example, a method of forming the above-described first conductive film 110 , and a material that constitutes the first conductive film 110 .
  • the process of forming the first interconnection 114 is carried out, for example, in a non-sintered state in which the lead-out interconnection 134 has not been sintered.
  • the metal particles are spread from the lead-out interconnection 134 in the non-sintered state to the inside of the first interconnection 114 .
  • the transparent conductive material spreads from the first interconnection 114 to the inside of the lead-out interconnection 134 .
  • a transition region in which the transparent conductive material and the metal material are mixed, is formed between the first conductive film 110 that constitutes the first interconnection 114 and the second conductive film 130 that constitutes the lead-out interconnection 134 .
  • the first electrode 112 that is connected to the first interconnection 114 is formed together with the first interconnection 114 .
  • the first electrode 112 is formed integrally with the first interconnection 114 to be constituted by the first conductive film 110 .
  • a heat treatment is carried out with respect to the first interconnection 114 and the lead-out interconnection 134 .
  • the lead-out interconnection 134 is sintered and the first interconnection 114 is dried.
  • This heat treatment is carried out, for example, under conditions of 120° C. to 250° C., and 2 minutes to 60 minutes.
  • the heat treatment is carried out in a state in which the metal particles are spread from the lead-out interconnection 134 in a non-sintered state to the inside of the first interconnection 114 .
  • the metal particles which are spread to the inside of the first interconnection 114 may become a linked body in which the metal particles are connected to each other through grain growth by the heat treatment.
  • the metal particles which are spread to the inside of the first interconnection 114 may exist in a state of being separated from the second conductive film 130 without constituting the linked body. A structure that is obtained at this stage is illustrated in FIG. 4 .
  • the insulating layer 120 is formed on the substrate 100 , the first electrode 112 , the first interconnection 114 , and the lead-out interconnection 164 .
  • the insulating layer 120 is patterned into a predetermined shape by using dry-etching, wet-etching, or the like. According to this, the plurality of first openings 122 and the plurality of second openings 124 are formed in the insulating layer 120 . At this time, for example, the plurality of first openings 122 are formed in such a manner that a part of the first electrode 112 is exposed from each of the first openings 122 .
  • the partition wall 170 is formed on the insulating layer 120 .
  • the partition wall 170 is obtained by patterning the insulating film provided on the insulating layer 120 into a predetermined shape by using dry-etching, wet-etching, or the like.
  • the partition wall 170 is formed from a photo-sensitive resin, it is possible to allow the partition wall 170 to have an inverted trapezoidal cross-sectional shape by adjusting conditions during exposure and development. A structure that is obtained at this stage is illustrated in FIG. 5 .
  • the hole injection layer 142 , the light-emitting layer 144 , and the electron injection layer 146 are sequentially formed in the first openings 122 . These may be formed by using, for example, a coating method or a deposition method.
  • the organic layer 140 is formed.
  • the conductive film 150 which constitutes the second electrode 152 and the second interconnection 154 , is formed on the organic layer 140 .
  • the conductive film 150 is formed in such a manner that a part of the conductive film 150 is located inside the second openings 124 .
  • the conductive film 150 is formed by using, for example, a deposition method or a sputtering method.
  • the organic EL element 20 which is constituted by the first electrode 112 , the second electrode 152 , and the organic layer 140 that is interposed between the first electrode 112 and the second electrode 152 , is formed on the substrate 100 .
  • the light-emitting device 10 is formed as described above.
  • the transition region in which the transparent conductive material that constitutes the first conductive film 110 and the metal material that constitutes the second conductive film 130 are mixed, exists between the first conductive film 110 and the second conductive film 130 .
  • a contact area between the first conductive film 110 and the second conductive film 130 increases, and thus it is possible to reduce a contact resistance therebetween. According to this, it is possible to improve connection reliability between the first conductive film 110 and the second conductive film 130 .
  • the light-emitting device 10 including the first interconnection 114 that is connected to the first electrode 112 constituting the organic EL element 20 and is constituted by the first conductive film 110 , and the lead-out interconnection 134 that is constituted by the second conductive film 130 . According to this, it is possible to improve connection reliability between the first electrode 112 and the lead-out interconnection 134 . In addition, it is possible to improve operation reliability of the light-emitting device 10 .
  • FIG. 8 is a plan view illustrating a light-emitting device 12 according to a second embodiment, and corresponds to FIG. 1 according to the first embodiment.
  • FIG. 9 is a cross-sectional view taken along line C-C in FIG. 8
  • FIG. 10 is a cross-sectional view taken along line D-D in FIG. 8 .
  • FIG. 11 is a view illustrating a part of the light-emitting device 12 illustrated in FIG. 8 . Particularly, FIG. 11 illustrates a positional relationship between the first conductive film 110 and the second conductive film 130 .
  • the first conductive film 110 of the joining structure 200 constitutes, for example, an electrode that constitutes the organic EL element.
  • the second conductive film 130 of the joining structure 200 constitutes, for example, a lead-out interconnection that is electrically connected to an electrode that constitutes the organic EL element.
  • the joining structure 200 is formed between the electrode that constitutes the organic EL element and the lead-out interconnection.
  • a transition region in which a transparent conductive material and a metal material are mixed, is formed between the electrode that constitutes the organic EL element, and the lead-out interconnection.
  • the light-emitting device 12 has the same configuration as that of the light-emitting device 10 according to the first embodiment except for the configuration of a first electrode 112 and a lead-out interconnection 134 .
  • the light-emitting device 12 includes the joining structure 200 .
  • the light-emitting device 12 includes the organic EL element 20 and the lead-out interconnection 134 .
  • the organic EL element 20 includes the first electrode 112 that is constituted by the first conductive film 110 , the second electrode 152 , and the organic layer 140 that is disposed between the first electrode 112 and the second electrode 152 .
  • the lead-out interconnection 134 is joined to the first electrode 112 , and is constituted by the second conductive film 130 .
  • the first electrode 112 is disposed on the substrate 100 in a matrix shape in a pixel region 300 .
  • a plurality of the first electrodes 112 which are disposed in a matrix shape, are spaced away from each other.
  • the pixel region 300 is a region including a plurality of the organic EL elements 20 .
  • a region surrounded by a one-dot chain line corresponds to the pixel region 300 .
  • the first electrode 112 is constituted by the first conductive film 110 that is constituted by a transparent conductive material. According to this, the first electrode 112 can have transparency.
  • the light-emitting device 12 according to this embodiment is not provided with the first interconnection 114 that constitutes the light-emitting device 10 according to the first embodiment.
  • the lead-out interconnection 134 extends in the Y-direction in the drawing.
  • a plurality of the lead-out interconnections 134 which are arranged in the X-direction in the drawing so as to be spaced away from each other, are provided on the substrate 100 .
  • Each of the lead-out interconnection 134 is connected to each of a plurality of the first electrodes 112 which are arranged in the Y-direction. According to this, each of the plurality of first electrodes 112 is connected to the outside through each of the lead-out interconnections 134 .
  • a signal for light-emission or non-light-emission is supplied to the organic EL element 20 through the lead-out interconnection 134 .
  • the lead-out interconnection 134 is constituted by the second conductive film 130 that is constituted by a metal material. According to this, the first electrode 112 that is constituted by the first conductive film 110 , and the lead-out interconnection 134 that is constituted by the second conductive film 130 are joined to each other, thereby forming the joining structure 200 . In an example illustrated in FIG. 11 , the joining structure 200 is formed at a portion surrounded by a broken line.
  • the first electrode 112 is connected to the lead-out interconnection 134 at one end thereof. At this time, for example, the first electrode 112 is joined to the lead-out interconnection 134 at one end thereof, thereby forming the joining structure 200 . As illustrated in FIG. 10 , for example, a portion of the lead-out interconnection 134 , which is joined to the first electrode 112 , is located in a region in which the organic EL element 20 is formed when seen in a plan view.
  • the first electrode 112 extends in a second direction when seen from the lead-out interconnection 134 . Further, the second direction in this embodiment represents, for example, the X-direction in the drawing.
  • the shape of the first electrode 112 is not particularly limited, and can be appropriately selected in combination with the design of the organic EL element 20 . Examples of the shape include a rectangular shape.
  • the lead-out interconnection 134 is provided in such a manner that at least a part thereof overlaps the first electrode 112 .
  • the transition region in which the transparent conductive material and the metal material are mixed, is formed.
  • the joining structure 200 in which the first conductive film 110 and the second conductive film 130 are joined to each other, includes the stacking region.
  • the first electrode 112 is formed in such a manner that one end of the first electrode 112 overlaps a part of the lead-out interconnection 134 , and thus the stacking region is formed.
  • the first electrode 112 is formed to cover a part of each of an upper surface and a lateral surface of the lead-out interconnection 134 .
  • the insulating layer 120 is formed to cover the lead-out interconnection 134 .
  • the insulating layer 120 is provided to cover a part of each of the lead-out interconnection 134 and a lead-out interconnection 164 .
  • a plurality of first openings 122 are formed in the insulating layer 120 so as to constitute, for example, a matrix.
  • the first electrode 112 is formed in the first opening 122 .
  • a plurality of the first electrodes 112 which are arranged in a matrix shape, are formed on the substrate 100 .
  • the plurality of first electrodes 112 are spaced away from each other by the insulating layer 120 .
  • the first openings 122 are formed to overlap a part of the lead-out interconnection 134 when seen in a plan view.
  • a part of the lead-out interconnection 134 which overlaps the first openings 122 when seen in a plan view, is connected to the first electrode 112 that is formed in the first opening 122 .
  • the insulating layer 120 is constituted by the same material as in the first embodiment.
  • the partition wall 170 , the organic layer 140 , the second electrode 152 , the second interconnection 154 , and the lead-out interconnection 164 in this embodiment have the same configurations as those in the first embodiment.
  • the light-emitting device 12 including the first electrode 112 that is constituted by the first conductive film 110 , and the lead-out interconnection 134 that is constituted by the second conductive film 130 . According to this, it is possible to improve connection reliability between the first electrode 112 and the lead-out interconnection 134 . In addition, it is possible to improve operation reliability of the light-emitting device 12 .
  • FIG. 12 is a plan view illustrating a configuration of a light-emitting device 10 according to a third embodiment.
  • the light-emitting device 10 is used as a light source of an illuminating device and the like.
  • the light-emitting device 10 includes one of each of a terminal (end of the lead-out interconnection 134 ) that is connected to the first electrode 112 , and a terminal (end of the lead-out interconnection 166 ) that is connected to the second electrode 152 .
  • the light-emitting device 10 may include one piece of the organic EL element 20 , or may include a plurality of the organic EL elements 20 .
  • the insulating layer 120 surrounds the organic EL element 20 so as to define a region serving as the organic EL element 20 .
  • a connection portion between the lead-out interconnection 134 and the first interconnection 114 is constituted by the joining structure 200 illustrated in the first embodiment.
  • the lead-out interconnection 166 has the same configuration as that of the lead-out interconnection 134 .
  • the lead-out interconnections 134 and 166 have a configuration in which a plurality of conductive layers are stacked. In this case, for example, the lead-out interconnections 134 and 166 have a configuration in which a first layer formed from Mo or a Mo alloy, a second layer formed from Al or an Al alloy, and a third layer formed from Mo or a Mo alloy are stacked in this order.
  • the lead-out interconnections 134 and 166 are formed on the substrate 100 .
  • the lead-out interconnections 134 and 166 are formed by using a sputtering method or a deposition method.
  • the first conductive film 110 is formed.
  • a method of forming the first conductive film 110 is the same as in the first embodiment.
  • the joining structure 200 is also formed.
  • the insulating layer 120 , the organic layer 140 , and the conductive film 150 are formed.
  • the conductive film 150 may be formed by the same method as in the first embodiment, or may be formed by the same method as in the first conductive film 110 . In the latter case, a connection portion between the conductive film 150 and the lead-out interconnection 166 also becomes the joining structure 200 . In this case, the conductive film 150 corresponds to the first conductive film, and the lead-out interconnection 166 corresponds to the second conductive film.
  • connection reliability between the lead-out interconnection 134 and the first interconnection 114 is improved.
  • connection portion between the conductive film 150 and the lead-out interconnection 166 also becomes the joining structure 200 , and thus connection reliability between the conductive film 150 and the lead-out interconnection 166 is also improved.
  • FIG. 13 is a cross-sectional view illustrating a configuration of an optical device 11 according to a fourth embodiment.
  • the optical device 11 according to this embodiment is a liquid crystal device, and has a configuration in which a liquid crystal material 420 is interposed between a substrate 402 and a substrate 404 .
  • a first electrode 412 is formed on a surface of the substrate 402 which faces the substrate 404
  • a second electrode 414 is formed on a surface of the substrate 404 which faces the substrate 402 .
  • the first electrode 412 and the second electrode 414 are formed from a transparent conductive material.
  • a sealing member 406 is provided between the substrate 402 and the substrate 404 so as to surround a space that is filled with the liquid crystal material 420 .
  • the substrate 402 and the substrate 404 are fixed to each other by the sealing member 406 .
  • a space surrounded by the substrates 402 and 404 , and the sealing member 406 is filled with the liquid crystal material 420 .
  • FIG. 14 is a plan view of the optical device 11 .
  • the substrate 404 and the second electrode 414 are not illustrated for ease of explanation.
  • a plurality of the first electrodes 412 extend on the substrate 402 in parallel with each other. Ends of the plurality of first electrodes 412 are located on an outer side of the sealing member 406 , and are respectively connected to different ones of terminals 432 . A connection portion between each of the first electrodes 412 and each of the terminals 432 is constituted by the joining structure 200 .
  • a plurality of the second electrodes 414 extend on the substrate 404 in a direction that intersects (for example, a direction that is perpendicular to) the first electrodes 412 .
  • a terminal that is connected to each of the second electrodes 414 is formed on the substrate 404 .
  • a connection portion between this terminal and the second electrode 414 is also constituted by the joining structure 200 .
  • the joining structure 200 is also formed between the first electrode 412 and the terminal 432 , and between the second electrode 414 and the terminal that is connected to the second electrode 414 , connection reliability therebetween is improved.
  • an ink containing silver particles was applied onto a glass substrate in a linear shape by an ink-jet method, thereby forming the second conductive film.
  • a coating solution containing a transparent conductive material was applied in a linear shape and the coating solution was dried, thereby forming the first conductive film.
  • the coating solution containing the transparent conductive material was applied in such a manner that the first conductive film covered a part of the second conductive film.
  • the coating solution containing the transparent conductive material As the coating solution containing the transparent conductive material, a solution, which was obtained by dispersing poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (PEDOT-PSS, CLEVIOS PH510 (manufactured by Heraeus Holding)) in a solvent, was used. Subsequently, a heat treatment was carried out with respect to the first conductive film and the second conductive film under conditions of 200° C. and 2 minutes, whereby the second conductive film was sintered, and the first conductive film was dried. According to this, a structure including the first conductive film and the second conductive film was prepared.
  • PEDOT-PSS polystyrene sulfonate
  • CLEVIOS PH510 manufactured by Heraeus Holding
  • Example 1 a transition region, in which the transparent conductive material and the metal material are mixed, was formed between the first conductive film and the second conductive film. At this time, a linked body of metal particles, which extended in a dentritic shape, was observed on a surface of the second conductive film. In addition, the metal material, which was separated and dispersed from the second conductive film, was observed at the inside of the first conductive film.
  • Example 1 when a current was allowed to flow between the first conductive film and the second conductive film for a long period of time, connection reliability between the first conductive film and the second conductive film was excellent.
  • a transparent conductive film formed from ITO was formed on the glass substrate by a sputtering method. Subsequently, the transparent conductive film was patterned in a linear shape through dry-etching, thereby forming the first conductive film. Subsequently, a metal film formed from silver was formed on the first conductive film by using the sputtering method. Subsequently, the metal film was patterned in a linear shape through dry-etching, thereby forming the second conductive film on the first conductive film. According to this, a structure including the first conductive film and the second conductive film was prepared.
  • Comparative Example 1 the transition region, in which the transparent conductive material and the metal material were mixed, was not formed between the first conductive film and the second conductive film.
  • Comparative Example 1 when a current was allowed to flow between the first conductive film and the second conductive film for a long period of time, the connection reliability between the first conductive film and the second conductive film was inferior to the connection reliability in Example 1.
  • Example 2 a structure including the first conductive film and the second conductive film was obtained in the same manner as in Example 1 except that as the substrate, a film-shaped substrate constituted by a biaxial stretched polyethylene terephthalate (PET) was used.
  • PET biaxial stretched polyethylene terephthalate
  • the structure that was obtained is applicable to the light-emitting device according to the first embodiment.
  • Example 2 the transition region, in which the transparent conductive material and the metal material were mixed, was formed between the first conductive film and the second conductive film. According to this, it can be seen that Example 2 is excellent in the connection reliability between the first conductive film and the second conductive film.

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  • Chemical & Material Sciences (AREA)
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Abstract

An optical device (10) has a joining structure in which a first conductive film (110) and a second conductive film (130) are joined to each other. The first conductive film (110) that constitutes the joining structure is constituted by a transparent conductive material and the like. In addition, the second conductive film (130) that constitutes the joining structure is constituted by a metal material. A transition region, in which the transparent conductive material and the metal material are mixed, exists between the first conductive film (110) and the second conductive film (130). The transparent conductive material includes, for example, a conductive polymer.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application is a Continuation Application of U.S. application Ser. No. 14/779,786, filed Sep. 24, 2015, which is a U.S. National Stage entry of PCT Application No. PCT/JP2014/058374, filed on Mar. 25, 2014, which claims priority to Japanese Patent Application No. 2013-075996, filed Apr. 1, 2013, the contents of which are incorporated herein by reference.
    • TECHNICAL FIELD
  • The present invention relates to an optical device that uses an optical element such as a liquid crystal element and an organic EL (electroluminescence) element.
    • BACKGROUND ART
  • An optical device is used as various illuminating devices or displays. Generally, it is necessary for the optical device to have a joining structure that joins different materials such as terminals and interconnections for transmission of an electrical signal that drives the optical element. For example, the organic EL element, which is an example of an optical element, includes a transparent electrode, another electrode that is disposed to face the transparent electrode, and an organic layer that is interposed between the electrodes. As a technology relating to the organic EL element, for example, there are technologies which are described in Patent Document 1 and Patent Document 2.
  • In the technology described in Patent Document 1, a connection structure between an electrode formed on a light-emitting function layer and a lead-out electrode that supplies a display signal to the electrode is formed through fusion joining. Specifically, Patent Document 1 discloses a configuration in which a negative electrode that is constituted by a metal electrode layer, and a metal lead-out electrode layer are fused and joined at the connection portion through localized heating with laser light.
  • Patent Document 2 describes a light-emitting element including an electrode that is constituted by a metal line that is formed in a linear shape, and a polymer line that covers an upper surface and a lateral surface of the metal line.
    • RELATED DOCUMENT Patent Document
  • [Patent Document 1] Japanese Unexamined Patent Application Publication No. 2003-264064
  • [Patent Document 2] Japanese Unexamined Patent Application Publication No. 2006-93123
    • SUMMARY OF THE INVENTION
  • In the joining structure in which a first conductive film and a second conductive film are joined to each other, high contact resistance may occur between the first conductive film and the second conductive film. In this case, connection reliability between the first conductive film and the second conductive film deteriorates, and thus there is a concern that power consumption of the optical device may increase.
  • As an example, a problem to be solved by the invention is to reduce power consumption of the optical device by improving the connection reliability between two conductive films which are joined to each other.
  • According to the invention, there is provided an optical device including a joining structure in which a first conductive film that is constituted by a conductive material and a second conductive film that is constituted by a metal material are joined to each other. In the joining structure, a transition region, in which the conductive material and the metal material are mixed, exists between the first conductive film and the second conductive film.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The above and other objects, advantages and features of the present invention will be more apparent from the following description of certain preferred embodiments taken in conjunction with the accompanying drawings.
  • FIG. 1 is a plan view illustrating a light-emitting device according to a first embodiment.
  • FIG. 2 is a cross-sectional view taken along line A-A in FIG. 1.
  • FIG. 3 is a cross-sectional view taken along line B-B in FIG. 1.
  • FIG. 4 is a view illustrating a part of the light-emitting device illustrated in FIG. 1.
  • FIG. 5 is a view illustrating a part of the light-emitting device illustrated in FIG. 1.
  • FIG. 6 is a view illustrating an example of a joining structure that is constituted by a first conductive film and a second conductive film in the first embodiment.
  • FIG. 7 is a view illustrating an example of a joining structure that is constituted by the first conductive film and the second conductive film in the first embodiment.
  • FIG. 8 is a plan view illustrating a light-emitting device according to a second embodiment.
  • FIG. 9 is a cross-sectional view taken along line C-C in FIG. 8.
  • FIG. 10 is a cross-sectional view taken along line D-D in FIG. 8.
  • FIG. 11 is a view illustrating a part of the light-emitting device illustrated in FIG. 8.
  • FIG. 12 is a plan view illustrating a configuration of a light-emitting device according to a third embodiment.
  • FIG. 13 is a cross-sectional view illustrating a configuration of an optical device according to a fourth embodiment.
  • FIG. 14 is a plan view of the optical device.
    •  DESCRIPTION OF EMBODIMENTS
  • Hereinafter, embodiments of the invention will be described with reference to the accompanying drawings. In all of the drawings, the same reference numerals will be given to the same constituent elements, and description thereof will be appropriately omitted.
    • First Embodiment
  • FIG. 1 is a plan view illustrating an optical device 10 according to a first embodiment. FIG. 2 is a cross-sectional view taken along line A-A in FIG. 1, and FIG. 3 is a cross-sectional view taken along line B-B in FIG. 1.
  • In addition, FIGS. 4 and 5 are views illustrating a part of the optical device 10 illustrated in FIG. 1. In FIG. 4, particularly, a positional relationship between a first conductive film 110 and a second conductive film 130 is illustrated. In addition, in FIG. 5, a configuration of an insulating layer 120 is illustrated. FIGS. 6 and 7 are views illustrating an example of a joining structure 200 that is constituted by the first conductive film 110 and the second conductive film 130 in this embodiment. In this embodiment, the optical device 10 is, for example, a light-emitting device such as an illuminating device and a display. Hereinafter, description will be given of the optical device 10 as a light-emitting device 10.
  • The joining structure 200 has a configuration in which the first conductive film 110 constituted by a transparent conductive material and a second conductive film 130 constituted by a metal material are joined to each other. In addition, a transition region, in which the transparent conductive material and the metal material are mixed, exists between the first conductive film 110 and the second conductive film 130.
  • In addition, the light-emitting device 10 according to this embodiment includes the joining structure 200. The light-emitting device 10 includes an organic EL element 20, a first interconnection 114 and a lead-out interconnection 134. The organic EL element 20 includes a first electrode 112, a second electrode 152, and an organic layer 140 that is disposed between the first electrode 112 and the second electrode 152. The first interconnection 114 is electrically connected to the first electrode 112, and is constituted by the first conductive film 110. The lead-out interconnection 134 is joined to the first interconnection 114, and is constituted by the second conductive film 130.
  • Hereinafter, an example of a configuration of the joining structure 200, an example of a configuration of the light-emitting device 10, and an example of a method of manufacturing the light-emitting device 10 according to the this embodiment will be described in detail.
  • First, the example of the configuration of the joining structure 200 according to this embodiment will be described.
  • The joining structure 200 is a joining structure in which the first conductive film 110 and the second conductive film 130 are joined to each other. Further, in this specification, the joining between the first conductive film 110 and the second conductive film 130 includes a case where another configuration is interposed between the first conductive film 110 and the second conductive film 130.
  • In this embodiment, the joining structure 200 is formed, for example, on a substrate 100. In this case, the first conductive film 110 and the second conductive film 130 are formed on the substrate 100.
  • For example, the joining structure 200 constitutes a light-emitting device that includes an organic EL element. For example, the light-emitting device includes an organic EL element, a first interconnection that is electrically connected to an electrode that constitutes the organic EL element, and a lead-out interconnection that is electrically connected to the first interconnection. At this time, an electrical signal, which controls light-emission and non-light-emission, is supplied to the electrode that constitutes the organic EL element from the outside through the lead-out interconnection and the first interconnection.
  • In this embodiment, the first conductive film 110 in the joining structure 200 constitutes, for example, the first interconnection that is connected to the electrode that constitutes the organic EL element. In addition, the second conductive film 130 in the joining structure 200 constitutes, for example, a lead-out interconnection. In this case, the joining structure 200 is formed between the first interconnection and the lead-out interconnection.
  • The first conductive film 110 substantially includes a conductive material. Examples of the conductive material, which constitutes the first conductive film 110, include a transparent conductive material, and paste-like conductive materials such as silver. Among these, the transparent conductive material is particularly preferable. In a case where the first conductive film 110 is constituted by the transparent conductive material, a conductive film having transparency is obtained. In this embodiment, for example, the first conductive film 110 has a shape that extends in a direction parallel to a plane of the substrate 100.
  • For example, the transparent conductive material includes an inorganic material such as indium tin oxide (ITO) and indium zinc oxide (IZO), or a conductive polymer.
  • In a case where the transparent conductive material includes the conductive polymer, the first conductive film 110 can be formed by using a coating method. In this case, in a process of forming the first conductive film 110, it is possible to suppress a thermal load from being applied to other configurations such as the substrate 100.
  • In addition, in a case where the inorganic material is included as the transparent conductive material, it is preferable that the first conductive film 110 is a coating-type conductive film that is formed through application of a solution in which the inorganic material is dispersed in an organic solvent. Even in this case, the first conductive film 110 can be formed by using the coating method.
  • In this embodiment, examples of the conductive polymer, which is included in the transparent conductive material that constitutes the first conductive film 110, include a conductive polymer that includes a n-conjugated conductive polymer and a polyanion. In this case, it is possible to form the first conductive film 110 that is particularly excellent in conductivity, heat resistance, and flexibility.
  • Although not particularly limited, examples of the n-conjugated conductive polymer that can be used include chain-line conductive polymers such as polythiophenes, polypyrroles, polyindoles, polycarbazoles, polyanilines, polyacetylenes, polyfurans, polyparaphenylene vinylenes, polyazulenes, polyparaphenylenes, polyparaphenylene sulfides, polyisothianaphthenes, and polythiazyls. The polythiophenes or the polyanilines are preferable from the viewpoints of conductivity, transparency, stability, and the like, and polyethylenedioxythiophene is more preferable.
  • Examples of the polyanion, which can be used, include polyvinyl sulfonic acid, polystyrene sulfonic acid, polyallyl sulfonic acid, polyacrylic acid ethyl sulfonic acid, polyacrylic acid butyl sulfonic acid, poly-2-acrylamide-2-methylpropane sulfonic acid, polyisoprene sulfonic acid, polyvinyl carboxylic acid, polystyrene carboxylic acid, polyallyl carboxylic acid, polyacrylic carboxylic acid, polymethacrylic carboxylic acid, poly-2-acrylamide-2-methylpropane carboxylic acid, polyisoprene carboxylic acid, and polyacrylic acid. The polyanions, which can be used in this embodiment, may be homopolymers thereof, or copolymers of two or more kinds thereof.
  • In a case where the conductive polymer is included as the transparent conductive material that constitutes the first conductive film 110, the transparent conductive material may further contain a cross-linking agent, a leveling agent, a antifoaming agent, and the like.
  • The second conductive film 130 includes a metal material. Here, as the metal material that is included in the second conductive film 130, for example, a metal material having electric resistance lower than that of the transparent conductive material that constitutes the first conductive film 110 is used. In this case, the first conductive film 110 and the second conductive film 130 are constituted by materials different from each other.
  • Examples of the metal material, which is included in the second conductive film 130, include Ag, Al, Cr, Mo, Ni, Nb, Ti, W, Au, Pt, Cu, and Pd. Further, the second conductive film 130 is, for example, a sintered body that is obtained through sintering of metal particles.
  • A transition region, in which the transparent conductive material that constitutes the first conductive film 110, and the metal material that constitutes the second conductive film 130 are mixed, exists between the first conductive film 110 and the second conductive film 130.
  • Here, the aspect in which the transparent conductive material and the metal material are mixed includes an aspect in which the metal material that constitutes the second conductive film 130 is spread into the first conductive film 110. At this time, the aspect in which the metal material is spread into the first conductive film 110 includes both a case where the a continuous body of the metal material, which is connected to the second conductive film 130 and extends toward the first conductive film 110, is formed, and a case where the metal material separated from the second conductive film 130 is dispersed inside the first conductive film 110.
  • In addition, in a case where the transparent conductive material and the metal material are mixed, the transparent conductive material, which constitutes the first conductive film 110, may be spread into the second conductive film 130. At this time, the aspect in which the transparent conductive material is spread into the second conductive film 130 includes both a case where a continuous body of the transparent conductive material, which is connected to the first conductive film 110 and extends toward the second conductive film 130, is formed, and a case where the transparent conductive material separated from the first conductive film 110 is dispersed inside the second conductive film 130.
  • The transition region represents a region that occupies a constant space between the first conductive film 110 and the second conductive film 130. In the space that is an example of the transition region in the embodiment, the transparent conductive material and the metal material exist in all cross-sections having a normal line that extends in an extension direction of the first conductive film 110, and in any of all planes parallel to the plane of the substrate 100.
  • According to this embodiment, a transition region, in which the transparent conductive material that constitutes the first conductive film 110 and the metal material that constitutes the second conductive film 130 are mixed exists between the first conductive film 110 and the second conductive film 130. According to this, a contact area between the first conductive film 110 and the second conductive film 130 increases, and thus it is possible to reduce contact resistance therebetween. Accordingly, it is possible to improve contact reliability between the first conductive film 110 and the second conductive film 130.
  • Apart of the first conductive film 110 overlaps the second conductive film 130, for example, when seen in a plan view. At this time, for example, in a stacking region in which the first conductive film 110 and the second conductive film 130 are stacked on each other, the transition region in which the transparent conductive material and the metal material are mixed is formed. In addition, the joining structure 200, in which the first conductive film 110 and the second conductive film 130 are joined to each other, includes the stacking region.
  • In this embodiment, the first conductive film 110 is formed in such a manner that one end of the first conductive film 110 overlaps a part of the second conductive film 130, and thus the stacking region is formed. In this case, for example, the first conductive film 110 is formed to cover a part of each of an upper surface and a lateral surface of the second conductive film 130.
  • FIGS. 6 and 7 illustrate a configuration of the stacking region in which the first conductive film 110 and the second conductive film 130 are stacked on each other.
  • An example illustrated in FIG. 6 is an example in which only a part of the metal material that constitutes a portion of the second conductive film 130, which is located in the stacking region, is spread into the first conductive film 110. At this time, only a part of the transparent conductive material that constitutes a portion of the first conductive film 110, which is located in the stacking region, is spread into the second conductive film 130. In the stacking region, both of the first conductive film 110 and the second conductive film 130 maintain a film shape.
  • FIG. 7 illustrates an example in which a degree of diffusion of the metal material to the inside of the first conductive film 110 in the stacking region is greater than that in the example illustrated in FIG. 6. In this case, a degree of diffusion of the transparent conductive material to the inside of the second conductive film 130 in the stacking region is also greater than that in the example illustrated in FIG. 6. At this time, the film thickness of the second conductive film 130 in the stacking region becomes smaller in comparison to, for example, the case illustrated in FIG. 6. In addition, for example, the film thickness of the first conductive film 110 in the stacking region also becomes smaller in comparison to the case illustrated in FIG. 6.
  • In the examples illustrated in FIGS. 6 and 7, in the second conductive film 130, a linked body may be formed, in which metal particles dispersed to the inside of the first conductive film 110 from the second conductive film 130 are subjected to grain growth and become connected to each other.
  • According to this, a protrusion constituted by the linked body is formed on a surface of the second conductive film 130. In addition, the linked body may have, for example, a dendritic shape. For example, metal particles, which are spread from the second conductive film 130 to the inside of the first conductive film 110 and are separated from the second conductive film 130, exist at the inside of the first conductive film 110.
  • Further, a degree of spreading of the transparent conductive material and the metal material in the transition region is not particularly limited. As illustrated in FIGS. 6 and 7, the transparent conductive material and the metal material may be spread to a certain extent at which at least a part of the first conductive film 110 and at least a part of the second conductive film 130 are capable of maintaining a film shape. In addition, the transparent conductive material and the metal material may be spread to a certain extent at which the first conductive film 110 and the second conductive film 130 do not maintain the film shape.
  • In this embodiment, for example, the joining structure 200, in which the first conductive film 110 and the second conductive film 130 are joined to each other, is formed as follows.
  • First, the second conductive film 130 is formed on the substrate 100. For example, the second conductive film 130 is formed by applying a coating solution containing metal particles onto the substrate 100 by using a coating method. The coating method that is used in the process is not particularly limited and examples thereof include an ink-jet method, a screen printing method, a spray coating method, and a dispenser coating method. In addition, for example, the coating solution, which is used in the process of forming the second conductive film 130, includes a binder resin and an organic solvent. As the binder resin, for example, a cellulose-based resin, an epoxy-based resin, or an acryl-based resin can be used. As the organic solvent, for example, a hydrocarbon-based solvent, or an alcohol-based solvent can be used. In addition, examples of the metal particles, which are contained in the coating solution, include Ag, Al, Cr, Mo, Ni, Nb, Ti, W, Au, Pt, Cu, or Pd.
  • Next, the first conductive film 110 is formed on the substrate 100. For example, the first conductive film 110 is formed by applying a coating solution that contains the transparent conductive material onto the substrate 100, and drying the coating solution. For example, the first conductive film 110 is formed to cover a part of the second conductive film 130.
  • Although not particularly limited, the coating solution that contains the transparent conductive material is applied onto the substrate 100 by using an ink-jet method, a screen printing method, a letterpress printing method, a gravure printing method, die coating, spin coating, or spraying. The coating solution that contains the transparent conductive material, which is used in the process of forming the first conductive film 110, includes an organic solvent, water, or the like in addition to the above-described transparent conductive material. As the organic solvent, for example, an alcohol-based solvent can be used.
  • In this embodiment, the process of forming the first conductive film 110 is carried out, for example, in a non-sintered state in which the second conductive film 130 has not been sintered. At this time, at a portion in which the second conductive film 130 and the first conductive film 110 come into contact with each other, metal particles are spread to the inside of the first conductive film 110 from the second conductive film 130 in a non-sintered state. In addition, at this time, at a portion in which the second conductive film 130 and the first conductive film 110 come into contact with each other, the transparent conductive material is spread to the inside of the second conductive film 130 from the first conductive film 110. According to this, the transition region, in which the transparent conductive material and the metal material are mixed, is formed between the first conductive film 110 and the second conductive film 130.
  • Next, a heat treatment is carried out with respect to the first conductive film 110 and the second conductive film 130. According to this, the second conductive film 130 is sintered, and the first conductive film 110 is dried. In a case where the transparent conductive material includes a conductive polymer, when the first conductive film 110 is dried, a cohesive force of the conductive polymer increases and thus it is possible to form the first conductive film 110 as a strong film. In addition, when the heat treatment is carried out with respect to the first conductive film 110, the first conductive film 110 is cured. This heat treatment is carried out, for example, under conditions of 120° C. to 250° C. and 2 minutes to 60 minutes. In addition, in a case where the transparent conductive material that constitutes the first conductive film 110 includes a photosensitive material, the first conductive film 110 may be cured through UV irradiation.
  • In this embodiment, the heat treatment is carried out in a state in which the metal particles are spread to the inside of the first conductive film 110 from the second conductive film 130 in a non-sintered state. The metal particles, which are spread to the inside of the first conductive film 110, may be subjected to grain growth by the heat treatment, thus forming a linked body in which the metal particles are connected to each other. In this case, a linked body, in which the metal particles are connected to each other after grain growth, is formed in the second conductive film 130.
  • Next, an example of a configuration of the light-emitting device 10 will be described.
  • FIG. 1 illustrates a case in which the light-emitting device 10 is a display.
  • Further, the light-emitting device 10 may be an illuminating device. In a case where the light-emitting device 10 is an illuminating device, for example, the light-emitting device 10 has a configuration in which a plurality of linear organic layers 140 having light emission colors different from each other are repetitively arranged. According to this, an illuminating device, which is excellent in color rendering properties, is realized. In addition, the light-emitting device 10, which is the illuminating device, may include a sheet-shaped organic layer 140.
  • For example, the substrate 100 is a transparent substrate. In this embodiment, the substrate 100 may be configured as a glass substrate. According to this, it is possible to manufacture the light-emitting device 10 excellent in heat resistance and the like at a low cost.
  • The substrate 100 may be a film-shaped substrate that is constituted by a resin material. In this case, particularly, it is possible to realize a display with high flexibility. Examples of the resin material that constitutes the film-shaped substrate include polyethylene terephthalate, polyethylene naphthalate, and polycarbonate. In addition, the substrate 100 may be a combination of glass and a resin material. According to this embodiment, even when the optical device (light-emitting device 10) has flexibility, connection reliability in the joining structure 200 constituted by the first conductive film 110 and the second conductive film 130 is high, and thus an effect of reducing power consumption is high.
  • For example, the light-emitting device 10, which is a display, includes a plurality of the organic EL elements 20 which are arranged in an array shape on the substrate 100. Each of the organic EL elements 20 includes the first electrode 112 that is provided on the substrate 100, the organic layer 140 that is provided on the first electrode 112, and the second electrode 152 that is provided on the organic layer 140. At this time, the organic layer 140 is interposed between the first electrode 112 and the second electrode 152.
  • In this embodiment, for example, a plurality of the first electrodes 112 which extend in a Y-direction in the drawing, and a plurality of the second electrodes 152 which extend in an X-direction in the drawing are provided on the substrate 100. In addition, the organic EL element 20 is formed at each portion in which each of the first electrodes 112 and each of the second electrodes 152 overlap each other when seen in a plan view. According to this, a plurality of the organic EL elements 20, which are arranged in an array shape, are formed on the substrate 100.
  • The first electrode 112 becomes, for example, a positive electrode of the organic EL element. In this case, for example, the first electrode 112 becomes a transparent electrode that is transparent or translucent with respect to a wavelength of light emitted from a light-emitting layer 144 of the organic layer 140 to be described later. In addition, for example, on the substrate 100 and within a pixel region 300, the first electrode 112 is provided to extend in a linear shape in the Y-direction in the drawing. In addition, for example, the plurality of first electrodes 112, which are spaced away from each other, are arranged on the substrate 100 in a direction (X-direction in the drawing) perpendicular to the extension direction of the first electrodes 112. At this time, for example, the plurality of first electrodes 112 are spaced away from each other. Further, the pixel region 300 is a region including the plurality of organic EL elements 20. In an example illustrated in FIG. 4, a region surrounded by a one-dot chain line corresponds to the pixel region 300.
  • In this embodiment, for example, the first electrode 112 is constituted by a transparent conductive material. As the transparent conductive material that constitutes the first electrode 112, for example, a transparent conductive material, which is the same as the transparent conductive material that constitutes the first conductive film 110, can be used. According to this, the first electrode 112 can have transparency.
  • For example, the first interconnection 114 is provided on the substrate 100. In this embodiment, a case where the first interconnection 114 is electrically connected to the first electrode 112 is exemplified. At this time, a plurality of the first interconnections 114, which are respectively connected to different ones of the first electrodes 112, are provided on the substrate 100. According to this, each of the plurality of first electrodes 112 in this embodiment is connected to the lead-out interconnection 134 through each of the first interconnections 114.
  • In this embodiment, the first interconnection 114 is constituted by the first conductive film 110 that is constituted by a transparent conductive material. According to this, the first interconnection 114 can have transparency.
  • In this embodiment, for example, the first electrode 112 and the first interconnection 114 are integrally provided on the substrate 100. In this case, for example, the first interconnection 114 and the first electrode 112 are constituted by the first conductive film 110. At this time, a portion of the first conductive film 110, which is located in the pixel region 300 including the plurality of organic EL elements 20, becomes the first electrode 112. In addition, a portion of the first conductive film 110, which is located outside the pixel region 300, becomes the first interconnection 114. The first electrode 112 is connected to the lead-out interconnection 134 through the first interconnection 114.
  • In the example illustrated in FIG. 4, a plurality of first conductive films 110, which extend in the Y-direction in the drawing, are provided on the substrate 100. The plurality of first conductive films 110 are arranged in the X-direction in the drawing so as to be spaced away from each other. In addition, a portion of the first conductive film 110, which is located further on an end side that is connected to the lead-out interconnection 134 than the pixel region 300 indicated by the one-dot chain line, becomes the first interconnection 114.
  • The lead-out interconnection 134 is provided on the substrate 100.
  • In this embodiment, a case where the lead-out interconnection 134 and the first interconnection 114 are connected to each other is exemplified. A plurality of the lead-out interconnections 134, which are arranged in the X-direction in the drawing and are spaced away from each other, are provided on the substrate 100. Each of the lead-out interconnections 134 is connected to each of the first interconnections 114. According to this, each of the plurality of first interconnections 114 is connected to an external side through each of the lead-out interconnections 134. A signal for light-emission or non-light-emission is supplied to the organic EL element 20 through the first interconnection 114 and the lead-out interconnection 134.
  • In this embodiment, the lead-out interconnection 134 is constituted by the second conductive film 130 that is constituted by a metal material. According to this, in a case where the lead-out interconnection 134 and the first interconnection 114 are connected to each other, the first interconnection 114 that is constituted by the first conductive film 110 and the lead-out interconnection 134 that is constituted by the second conductive film 130 are joined to each other, thereby forming the joining structure 200. In the example illustrated in FIG. 4, the joining structure 200 is formed at a portion that is surrounded by a broken line.
  • The first interconnection 114 is connected to the lead-out interconnection 134 at one end. At this time, for example, the first interconnection 114 and the lead-out interconnection 134 are joined to each other at the one end, thereby forming the joining structure 200. The first interconnection 114 extends in a first direction when seen from the lead-out interconnection 134. Further, the first direction in this embodiment indicates, for example, the Y-direction in the drawing.
  • In this embodiment, a part of the first interconnection 114 overlaps, for example, the lead-out interconnection 134 when seen in a plan view. At this time, for example, a transition region, in which a transparent conductive material and a metal material are mixed, is formed in a stacking region in which the first interconnection 114 that is constituted by the first conductive film 110 and the lead-out interconnection 134 that is constituted by the second conductive film 130 are stacked on each other. In addition, the joining structure 200, in which the first conductive film 110 and the second conductive film 130 are joined to each other, includes the stacking region. In this embodiment, the first interconnection 114 is formed in such a manner that one end of the first interconnection 114 overlaps a part of the lead-out interconnection 134, thereby forming the stacking region. In this case, for example, the first interconnection 114 is formed to cover each of parts of an upper surface and a lateral surface of the lead-out interconnection 134.
  • FIG. 4 illustrates a case where only an end of the lead-out interconnection 134 on a pixel region 300 side overlaps the first interconnection 114 when seen in a plan view. In this case, the end of the lead-out interconnection 134 on the pixel region 300 side is covered with the first interconnection 114 and the other portion is exposed without being covered with the first interconnection 114. In this embodiment, the lead-out interconnection 134 is covered with the first interconnection 114, for example, at a part of the upper surface, an end surface that faces the pixel region 300, and a part of two lateral surfaces which are adjacent to the end surface.
  • For example, the insulating layer 120 is provided on the substrate 100 to cover the first electrode 112. In this embodiment, the insulating layer 120 is provided to cover, for example, a part of each of the first electrode 112, the first interconnection 114, and a lead-out interconnection 164 to be described later.
  • The insulating layer 120 is a photo-sensitive resin such as a polyimide-based resin, and is formed in a desired pattern through exposure and development. The insulating layer 120 may be constituted by a resin material other than the polyimide-based resin, and may be an epoxy-based resin or an acryl-based resin.
  • The insulating layer 120 is provided with, for example, a plurality of first openings 122. As illustrated in FIG. 5, the first openings 122 are formed to constitute, for example, a matrix.
  • In this embodiment, the plurality of first openings 122 are formed to be located on the first electrode 112. On each of the first electrodes 112 which extend in the Y-direction in the drawing, for example, the plurality of first openings 122 are arranged in the Y-direction with a predetermined gap therebetween. In addition, for example, the plurality of first openings 122 are provided at a position that overlaps a second electrode 152 that extends in a direction (X-direction in the drawing) orthogonal to the first electrode 112. According to this, the plurality of first openings 122 are arranged to constitute a matrix.
  • For example, a plurality of second openings 124 are provided in the insulating layer 120.
  • As illustrated in FIG. 5, for example, the second openings 124 are provided to be located on the lead-out interconnection 164. The plurality of second openings 124 are arranged along one side of a matrix constituted by the first openings 122. When seen in a direction (for example, the Y-direction in the drawing) along the one side, the second openings 124 are disposed at the same interval as the first openings 122.
  • For example, a partition wall 170 is provided on the insulating layer 120.
  • As illustrated in FIG. 1, the partition wall 170 is provided to extend in the X-direction in the drawing. That is, the partition wall 170 is formed along an extension direction of the second electrode 152. In addition, a plurality of the partition walls 170 are provided to be arranged in the Y-direction in the drawing.
  • For example, the partition wall 170 is a photo-sensitive resin such as a polyimide-based resin, and is formed in a desired pattern through exposure and development. Further, the partition wall 170 may be constituted by a resin material other than the polyimide-based resin, and may be an epoxy-based resin or an acryl-based resin.
  • For example, a cross-section of the partition wall 170 has a shape (inverted trapezoidal shape) in which an upper side and a lower side of a trapezoid are inverted from each other. That is, a width of the upper surface of the partition wall 170 is greater than, for example, a width of a bottom surface of the partition wall 170. In this case, even when collectively forming the plurality of second electrodes 152 by a sputtering method, a deposition method, and the like, it is possible to separate the plurality of second electrodes 152 from each other, each being located between adjacent partition walls 170. Accordingly, it is possible to easily form the second electrodes 152.
  • Further, a planar shape of the partition wall 170 is not limited to a shape illustrated in FIG. 1. Accordingly, by changing the planar shape of the partition wall 170, it is possible to freely change a planar pattern of the plurality of second electrodes 152 which are separated from each other by the partition wall 170.
  • As illustrated in FIG. 2, for example, the organic layer 140 is formed in the first openings 122.
  • In this embodiment, for example, the organic layer 140 is constituted by a stacked body in which a hole injection layer 142, a light-emitting layer 144, and an electron injection layer 146 are sequentially stacked. At this time, the hole injection layer 142 comes into contact with the first electrode 112, and the electron injection layer 146 comes into contact with the second electrode 152. According to this, the organic layer 140 is interposed between the first electrode 112 and the second electrode 152.
  • Further, a hole transport layer may be formed between the hole injection layer 142 and the light-emitting layer 144, and an electron transport layer may be formed between the light-emitting layer 144 and the electron injection layer 146. In addition, the organic layer 140 may not be provided with the hole injection layer 142.
  • In this embodiment, for example, the partition wall 170 is provided on the insulating layer 120. In this case, as illustrated in FIG. 2, with regard to the organic layer 140 that is provided in each of a plurality of regions interposed between adjacent partition walls 170, the organic layers 140 are separated from each other in the Y-direction in the drawing. Further, for example, a stacked film, which is constituted by the same material as in the organic layer 140, is formed on the partition wall 170.
  • On the other hand, as illustrated in FIG. 3, the respective layers, which constitute the organic layer 140, are provided to be continuous between the first openings 122 adjacent to each other in the X-direction in the drawing in which the partition wall 170 extends.
  • The second electrode 152 is provided on the organic layer 140.
  • In this embodiment, for example, the second electrode 152 becomes a negative electrode of the organic EL element. For example, the second electrode 152 is provided to extend in a linear shape in the X-direction in the drawing. In addition, for example, a plurality of the second electrodes 152, which are spaced away from each other, are arranged on the substrate 100 in a direction (Y-direction in the drawing) perpendicular to the extension direction of the second electrodes 152.
  • For example, the second electrode 152 is constituted by a metal material such as tin, magnesium, indium, calcium, aluminum, silver, and alloys thereof. These materials may be used alone or in an arbitrary combination of two or more kinds thereof. Further, in a case where the second electrode 152 is a negative electrode, it is preferable that the second electrode 152 is constituted by a conductive material having a work function that is smaller than that of the first electrode 112 that is a positive electrode.
  • A second interconnection 154 is provided on the substrate 100.
  • The second interconnection 154 is connected to either the first electrode 112 or the second electrode 152 which is not connected to the first interconnection 114. According to this, either the first electrode 112 or the second electrode 152, which is connected to the second interconnection 154, is connected to the outside through the second interconnection 154.
  • In this embodiment, a case where the second interconnection 154 is provided on the organic layer 140 and is connected to the second electrode 152 is exemplified. At this time, a plurality of the second interconnections 154, which are respectively connected to different ones of the second electrodes 152, are provided on the organic layer 140. According to this, each of the plurality of second electrodes 152 in this embodiment is connected to the outside through each of the second interconnections 154. Further, for example, apart of the second interconnection 154 is embedded in the second opening 124, and is connected to the lead-out interconnection 164 to be described later.
  • For example, the second interconnection 154 is constituted by a metal material. As the metal material that constitutes the second interconnection 154, for example, the same metal material as in the second electrode 152 can be used.
  • In this embodiment, for example, the second electrode 152 and the second interconnection 154 are integrally provided on the organic layer 140, and constitute a conductive film 150. In this case, a portion of the conductive film 150, which is located in the pixel region 300 including the plurality of organic EL elements 20, becomes the second electrode 152. In addition, a portion of the conductive film 150, which is located outside the pixel region 300, becomes the second interconnection 154. For example, the second electrode 152 is connected to the lead-out interconnection 164 through the second interconnection 154. Further, in an example illustrated in FIG. 1, a region surrounded by a one-dot chain line corresponds to the pixel region 300.
  • In the example illustrated in FIG. 1, a plurality of the conductive films 150, which extend in the X-direction in the drawing, are provided on the organic layer 140. In addition, the plurality of conductive films 150 are arranged in the Y-direction in the drawing so as to be spaced away from each other. In addition, a portion of each of the conductive films 150, which is located further on an end side that is connected to the lead-out interconnection 164 than the pixel region 300, becomes the second interconnection 154.
  • For example, the plurality of conductive films 150 are collectively formed on the organic layer 140 by using a sputtering method, a deposition method, and the like. Even in this case, in this embodiment, the partition wall 170 is formed on the insulating layer 120. Accordingly, the conductive films 150 which are provided in a plurality of regions interposed between adjacent partition walls 170 are separated from each other in the Y-direction in the drawing.
  • According to this, it is possible to form the plurality of conductive films 150 which are arranged in the Y-direction in the drawing to be spaced away from each other and extend in the X-direction in the drawing. At this time, a film that is constituted by the same material as in the conductive film 150 is formed on each of the partition walls 170.
  • For example, the lead-out interconnection 164 is provided on the substrate 100. The second interconnection 154 is connected to the outside through the lead-out interconnection 164. According to this, the second electrode 152 is connected to the outside through the second interconnection 154 and the lead-out interconnection 164, allowing a signal to be supplied thereto.
  • For example, the lead-out interconnection 164 is constituted by a metal material. As the metal material that constitutes the lead-out interconnection 164, for example, the same metal material as in the lead-out interconnection 134 can be used. In this case, the lead-out interconnection 164 can be formed simultaneously with the lead-out interconnection 134. According to this, it is possible to suppress an increase in the number of manufacturing processes of the light-emitting device 10. Generally, an end of the lead-out interconnection 134 or 164 forms a terminal portion of the light-emitting device 10. The terminal portion is electrically connected to an external circuit. An anisotropic conductive film (ACF) or a bonding wire is used for connection between the terminal portion and the outside. Particularly, in the optical device (light-emitting device 10) using the bonding wire, even in a case where the optical device has an irregular or circular shape, in addition to a rectangular shape, connection reliability in the joining structure 200 that is constituted by the first conductive film 110 and the second conductive film 130 is high, and thus an effect of reducing power consumption is high.
  • Next, description will be give of an example of a method of manufacturing the light-emitting device 10.
  • First, the lead-out interconnection 134 is formed on the substrate 100. For example, the lead-out interconnection 134 is formed by applying a coating solution that contains metal particles on the substrate 100 by using a coating method. Further, in this embodiment, the lead-out interconnection 134 is constituted by the second conductive film 130. According to this, for example, the lead-out interconnection 134 is formed by using a method of forming the above-described second conductive film 130 and a material that constitutes the second conductive film 130.
  • In addition, in this embodiment, for example, the lead-out interconnection 164 is formed on the substrate 100 simultaneously with the process of forming the lead-out interconnection 134. In this case, for example, the lead-out interconnection 164 is formed by the same method and the same material as those of the lead-out interconnection 134.
  • Next, the first interconnection 114 is formed on the substrate 100. For example, the first interconnection 114 is formed by applying a coating solution that contains a transparent conductive material on the substrate 100, and by drying the coating solution. In addition, in this embodiment, the first interconnection 114 is the first conductive film 110. According to this, the first interconnection 114 is formed by using, for example, a method of forming the above-described first conductive film 110, and a material that constitutes the first conductive film 110.
  • In this embodiment, the process of forming the first interconnection 114 is carried out, for example, in a non-sintered state in which the lead-out interconnection 134 has not been sintered. At this time, at a portion at which the lead-out interconnection 134 and the first interconnection 114 come into contact with each other, the metal particles are spread from the lead-out interconnection 134 in the non-sintered state to the inside of the first interconnection 114. In addition, at a portion at which the lead-out interconnection 134 and the first interconnection 114 come into contact with each other, the transparent conductive material spreads from the first interconnection 114 to the inside of the lead-out interconnection 134. According to this, a transition region, in which the transparent conductive material and the metal material are mixed, is formed between the first conductive film 110 that constitutes the first interconnection 114 and the second conductive film 130 that constitutes the lead-out interconnection 134.
  • In the process of forming the first interconnection 114, for example, the first electrode 112 that is connected to the first interconnection 114 is formed together with the first interconnection 114. In this case, for example, the first electrode 112 is formed integrally with the first interconnection 114 to be constituted by the first conductive film 110.
  • Next, a heat treatment is carried out with respect to the first interconnection 114 and the lead-out interconnection 134. According to this, the lead-out interconnection 134 is sintered and the first interconnection 114 is dried. This heat treatment is carried out, for example, under conditions of 120° C. to 250° C., and 2 minutes to 60 minutes.
  • In this embodiment, the heat treatment is carried out in a state in which the metal particles are spread from the lead-out interconnection 134 in a non-sintered state to the inside of the first interconnection 114. At this time, the metal particles which are spread to the inside of the first interconnection 114 may become a linked body in which the metal particles are connected to each other through grain growth by the heat treatment. In addition, the metal particles which are spread to the inside of the first interconnection 114 may exist in a state of being separated from the second conductive film 130 without constituting the linked body. A structure that is obtained at this stage is illustrated in FIG. 4.
  • Next, the insulating layer 120 is formed on the substrate 100, the first electrode 112, the first interconnection 114, and the lead-out interconnection 164. The insulating layer 120 is patterned into a predetermined shape by using dry-etching, wet-etching, or the like. According to this, the plurality of first openings 122 and the plurality of second openings 124 are formed in the insulating layer 120. At this time, for example, the plurality of first openings 122 are formed in such a manner that a part of the first electrode 112 is exposed from each of the first openings 122.
  • Next, the partition wall 170 is formed on the insulating layer 120. The partition wall 170 is obtained by patterning the insulating film provided on the insulating layer 120 into a predetermined shape by using dry-etching, wet-etching, or the like. In a case where the partition wall 170 is formed from a photo-sensitive resin, it is possible to allow the partition wall 170 to have an inverted trapezoidal cross-sectional shape by adjusting conditions during exposure and development. A structure that is obtained at this stage is illustrated in FIG. 5.
  • Next, the hole injection layer 142, the light-emitting layer 144, and the electron injection layer 146 are sequentially formed in the first openings 122. These may be formed by using, for example, a coating method or a deposition method.
  • According to this, the organic layer 140 is formed.
  • Next, the conductive film 150, which constitutes the second electrode 152 and the second interconnection 154, is formed on the organic layer 140. At this time, for example, the conductive film 150 is formed in such a manner that a part of the conductive film 150 is located inside the second openings 124. The conductive film 150 is formed by using, for example, a deposition method or a sputtering method.
  • According to this, the organic EL element 20, which is constituted by the first electrode 112, the second electrode 152, and the organic layer 140 that is interposed between the first electrode 112 and the second electrode 152, is formed on the substrate 100.
  • In this embodiment, for example, the light-emitting device 10 is formed as described above.
  • As described above, according to this embodiment, the transition region, in which the transparent conductive material that constitutes the first conductive film 110 and the metal material that constitutes the second conductive film 130 are mixed, exists between the first conductive film 110 and the second conductive film 130. According to this, a contact area between the first conductive film 110 and the second conductive film 130 increases, and thus it is possible to reduce a contact resistance therebetween. According to this, it is possible to improve connection reliability between the first conductive film 110 and the second conductive film 130.
  • In addition, it is possible to realize the light-emitting device 10 including the first interconnection 114 that is connected to the first electrode 112 constituting the organic EL element 20 and is constituted by the first conductive film 110, and the lead-out interconnection 134 that is constituted by the second conductive film 130. According to this, it is possible to improve connection reliability between the first electrode 112 and the lead-out interconnection 134. In addition, it is possible to improve operation reliability of the light-emitting device 10.
    • Second Embodiment
  • FIG. 8 is a plan view illustrating a light-emitting device 12 according to a second embodiment, and corresponds to FIG. 1 according to the first embodiment. FIG. 9 is a cross-sectional view taken along line C-C in FIG. 8, and FIG. 10 is a cross-sectional view taken along line D-D in FIG. 8. FIG. 11 is a view illustrating a part of the light-emitting device 12 illustrated in FIG. 8. Particularly, FIG. 11 illustrates a positional relationship between the first conductive film 110 and the second conductive film 130.
  • In this embodiment, the first conductive film 110 of the joining structure 200 constitutes, for example, an electrode that constitutes the organic EL element. The second conductive film 130 of the joining structure 200 constitutes, for example, a lead-out interconnection that is electrically connected to an electrode that constitutes the organic EL element. In this case, the joining structure 200 is formed between the electrode that constitutes the organic EL element and the lead-out interconnection. At this time, a transition region, in which a transparent conductive material and a metal material are mixed, is formed between the electrode that constitutes the organic EL element, and the lead-out interconnection.
  • The light-emitting device 12 according to this embodiment has the same configuration as that of the light-emitting device 10 according to the first embodiment except for the configuration of a first electrode 112 and a lead-out interconnection 134.
  • The light-emitting device 12 includes the joining structure 200. The light-emitting device 12 includes the organic EL element 20 and the lead-out interconnection 134. The organic EL element 20 includes the first electrode 112 that is constituted by the first conductive film 110, the second electrode 152, and the organic layer 140 that is disposed between the first electrode 112 and the second electrode 152. The lead-out interconnection 134 is joined to the first electrode 112, and is constituted by the second conductive film 130.
  • Hereinafter, description will be given of an example of a configuration of the light-emitting device 12.
  • In this embodiment, for example, the first electrode 112 is disposed on the substrate 100 in a matrix shape in a pixel region 300. A plurality of the first electrodes 112, which are disposed in a matrix shape, are spaced away from each other. Further, the pixel region 300 is a region including a plurality of the organic EL elements 20. In an example illustrated in FIG. 8, a region surrounded by a one-dot chain line corresponds to the pixel region 300.
  • The first electrode 112 is constituted by the first conductive film 110 that is constituted by a transparent conductive material. According to this, the first electrode 112 can have transparency.
  • The light-emitting device 12 according to this embodiment is not provided with the first interconnection 114 that constitutes the light-emitting device 10 according to the first embodiment.
  • In this embodiment, a case where the lead-out interconnection 134 is connected to the first electrode 112 is exemplified. The lead-out interconnection 134 extends in the Y-direction in the drawing. In addition, a plurality of the lead-out interconnections 134, which are arranged in the X-direction in the drawing so as to be spaced away from each other, are provided on the substrate 100. Each of the lead-out interconnection 134 is connected to each of a plurality of the first electrodes 112 which are arranged in the Y-direction. According to this, each of the plurality of first electrodes 112 is connected to the outside through each of the lead-out interconnections 134. A signal for light-emission or non-light-emission is supplied to the organic EL element 20 through the lead-out interconnection 134.
  • In this embodiment, the lead-out interconnection 134 is constituted by the second conductive film 130 that is constituted by a metal material. According to this, the first electrode 112 that is constituted by the first conductive film 110, and the lead-out interconnection 134 that is constituted by the second conductive film 130 are joined to each other, thereby forming the joining structure 200. In an example illustrated in FIG. 11, the joining structure 200 is formed at a portion surrounded by a broken line.
  • The first electrode 112 is connected to the lead-out interconnection 134 at one end thereof. At this time, for example, the first electrode 112 is joined to the lead-out interconnection 134 at one end thereof, thereby forming the joining structure 200. As illustrated in FIG. 10, for example, a portion of the lead-out interconnection 134, which is joined to the first electrode 112, is located in a region in which the organic EL element 20 is formed when seen in a plan view.
  • The first electrode 112 extends in a second direction when seen from the lead-out interconnection 134. Further, the second direction in this embodiment represents, for example, the X-direction in the drawing. The shape of the first electrode 112 is not particularly limited, and can be appropriately selected in combination with the design of the organic EL element 20. Examples of the shape include a rectangular shape.
  • The lead-out interconnection 134 is provided in such a manner that at least a part thereof overlaps the first electrode 112. At this time, for example, in a stacking region in which the first electrode 112 that is constituted by the first conductive film 110 and the lead-out interconnection 134 that is constituted by the second conductive film 130 are stacked on each other, the transition region, in which the transparent conductive material and the metal material are mixed, is formed. In addition, the joining structure 200, in which the first conductive film 110 and the second conductive film 130 are joined to each other, includes the stacking region.
  • In an example illustrated in FIG. 11, the first electrode 112 is formed in such a manner that one end of the first electrode 112 overlaps a part of the lead-out interconnection 134, and thus the stacking region is formed. In this case, for example, the first electrode 112 is formed to cover a part of each of an upper surface and a lateral surface of the lead-out interconnection 134.
  • For example, the insulating layer 120 is formed to cover the lead-out interconnection 134. In this embodiment, for example, the insulating layer 120 is provided to cover a part of each of the lead-out interconnection 134 and a lead-out interconnection 164. In addition, as illustrated in FIG. 11, a plurality of first openings 122 are formed in the insulating layer 120 so as to constitute, for example, a matrix.
  • In this embodiment, the first electrode 112 is formed in the first opening 122. According to this, a plurality of the first electrodes 112, which are arranged in a matrix shape, are formed on the substrate 100. In addition, as illustrated in FIGS. 9 and 10, the plurality of first electrodes 112 are spaced away from each other by the insulating layer 120. For example, the first openings 122 are formed to overlap a part of the lead-out interconnection 134 when seen in a plan view. In this case, a part of the lead-out interconnection 134, which overlaps the first openings 122 when seen in a plan view, is connected to the first electrode 112 that is formed in the first opening 122.
  • For example, the insulating layer 120 is constituted by the same material as in the first embodiment.
  • For example, the partition wall 170, the organic layer 140, the second electrode 152, the second interconnection 154, and the lead-out interconnection 164 in this embodiment have the same configurations as those in the first embodiment.
  • As described above, even in this embodiment, it is possible to improve connection reliability between the first conductive film 110 and the second conductive film 130, similar to the first embodiment.
  • In addition, according to this embodiment, it is possible to realize the light-emitting device 12 including the first electrode 112 that is constituted by the first conductive film 110, and the lead-out interconnection 134 that is constituted by the second conductive film 130. According to this, it is possible to improve connection reliability between the first electrode 112 and the lead-out interconnection 134. In addition, it is possible to improve operation reliability of the light-emitting device 12.
    • Third Embodiment
  • FIG. 12 is a plan view illustrating a configuration of a light-emitting device 10 according to a third embodiment. In this embodiment, for example, the light-emitting device 10 is used as a light source of an illuminating device and the like. According to this, the light-emitting device 10 includes one of each of a terminal (end of the lead-out interconnection 134) that is connected to the first electrode 112, and a terminal (end of the lead-out interconnection 166) that is connected to the second electrode 152. In addition, the light-emitting device 10 may include one piece of the organic EL element 20, or may include a plurality of the organic EL elements 20. In the latter case, a current simultaneously flows, and thus the plurality of organic EL elements 20 are simultaneously controlled. Further, in any case, the insulating layer 120 (not illustrated in the drawing) surrounds the organic EL element 20 so as to define a region serving as the organic EL element 20.
  • A connection portion between the lead-out interconnection 134 and the first interconnection 114 is constituted by the joining structure 200 illustrated in the first embodiment. In addition, the lead-out interconnection 166 has the same configuration as that of the lead-out interconnection 134. The lead-out interconnections 134 and 166 have a configuration in which a plurality of conductive layers are stacked. In this case, for example, the lead-out interconnections 134 and 166 have a configuration in which a first layer formed from Mo or a Mo alloy, a second layer formed from Al or an Al alloy, and a third layer formed from Mo or a Mo alloy are stacked in this order.
  • Next, description will be given of a method of manufacturing the light-emitting device 10 according to this embodiment. First, the lead-out interconnections 134 and 166 are formed on the substrate 100. The lead-out interconnections 134 and 166 are formed by using a sputtering method or a deposition method. Subsequently, the first conductive film 110 is formed. A method of forming the first conductive film 110 is the same as in the first embodiment. At this time, the joining structure 200 is also formed. Subsequently, the insulating layer 120, the organic layer 140, and the conductive film 150 are formed.
  • Further, the conductive film 150 may be formed by the same method as in the first embodiment, or may be formed by the same method as in the first conductive film 110. In the latter case, a connection portion between the conductive film 150 and the lead-out interconnection 166 also becomes the joining structure 200. In this case, the conductive film 150 corresponds to the first conductive film, and the lead-out interconnection 166 corresponds to the second conductive film.
  • Also in this embodiment, since the joining structure 200 is formed between the lead-out interconnection 134 and the first interconnection 114, connection reliability between the lead-out interconnection 134 and the first interconnection 114 is improved. In addition, in a case of forming the conductive film 150 by the same method as in the first conductive film 110, the connection portion between the conductive film 150 and the lead-out interconnection 166 also becomes the joining structure 200, and thus connection reliability between the conductive film 150 and the lead-out interconnection 166 is also improved.
    • Fourth Embodiment
  • FIG. 13 is a cross-sectional view illustrating a configuration of an optical device 11 according to a fourth embodiment. The optical device 11 according to this embodiment is a liquid crystal device, and has a configuration in which a liquid crystal material 420 is interposed between a substrate 402 and a substrate 404.
  • Specifically, a first electrode 412 is formed on a surface of the substrate 402 which faces the substrate 404, and a second electrode 414 is formed on a surface of the substrate 404 which faces the substrate 402. The first electrode 412 and the second electrode 414 are formed from a transparent conductive material. In addition, a sealing member 406 is provided between the substrate 402 and the substrate 404 so as to surround a space that is filled with the liquid crystal material 420. In other words, the substrate 402 and the substrate 404 are fixed to each other by the sealing member 406. In addition, a space surrounded by the substrates 402 and 404, and the sealing member 406 is filled with the liquid crystal material 420.
  • FIG. 14 is a plan view of the optical device 11. In FIG. 14, the substrate 404 and the second electrode 414 are not illustrated for ease of explanation.
  • As illustrated in FIG. 14, a plurality of the first electrodes 412 extend on the substrate 402 in parallel with each other. Ends of the plurality of first electrodes 412 are located on an outer side of the sealing member 406, and are respectively connected to different ones of terminals 432. A connection portion between each of the first electrodes 412 and each of the terminals 432 is constituted by the joining structure 200.
  • Further, a plurality of the second electrodes 414 extend on the substrate 404 in a direction that intersects (for example, a direction that is perpendicular to) the first electrodes 412. In addition, a terminal that is connected to each of the second electrodes 414 is formed on the substrate 404. A connection portion between this terminal and the second electrode 414 is also constituted by the joining structure 200.
  • According to this embodiment, since the joining structure 200 is also formed between the first electrode 412 and the terminal 432, and between the second electrode 414 and the terminal that is connected to the second electrode 414, connection reliability therebetween is improved.
  • Hereinafter, the embodiments will be described in detail with reference to Examples. Further, the embodiments are not limited to the description in Examples.
    • Example 1
  • First, an ink containing silver particles was applied onto a glass substrate in a linear shape by an ink-jet method, thereby forming the second conductive film. Subsequently, a coating solution containing a transparent conductive material was applied in a linear shape and the coating solution was dried, thereby forming the first conductive film. At this time, the coating solution containing the transparent conductive material was applied in such a manner that the first conductive film covered a part of the second conductive film. As the coating solution containing the transparent conductive material, a solution, which was obtained by dispersing poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (PEDOT-PSS, CLEVIOS PH510 (manufactured by Heraeus Holding)) in a solvent, was used. Subsequently, a heat treatment was carried out with respect to the first conductive film and the second conductive film under conditions of 200° C. and 2 minutes, whereby the second conductive film was sintered, and the first conductive film was dried. According to this, a structure including the first conductive film and the second conductive film was prepared.
  • The structure, which was obtained in this manner, was applied to the light-emitting device according to the first embodiment.
  • In Example 1, a transition region, in which the transparent conductive material and the metal material are mixed, was formed between the first conductive film and the second conductive film. At this time, a linked body of metal particles, which extended in a dentritic shape, was observed on a surface of the second conductive film. In addition, the metal material, which was separated and dispersed from the second conductive film, was observed at the inside of the first conductive film.
  • In Example 1, when a current was allowed to flow between the first conductive film and the second conductive film for a long period of time, connection reliability between the first conductive film and the second conductive film was excellent.
    • Comparative Example 1
  • First, a transparent conductive film formed from ITO was formed on the glass substrate by a sputtering method. Subsequently, the transparent conductive film was patterned in a linear shape through dry-etching, thereby forming the first conductive film. Subsequently, a metal film formed from silver was formed on the first conductive film by using the sputtering method. Subsequently, the metal film was patterned in a linear shape through dry-etching, thereby forming the second conductive film on the first conductive film. According to this, a structure including the first conductive film and the second conductive film was prepared.
  • In Comparative Example 1, the transition region, in which the transparent conductive material and the metal material were mixed, was not formed between the first conductive film and the second conductive film. In Comparative Example 1, when a current was allowed to flow between the first conductive film and the second conductive film for a long period of time, the connection reliability between the first conductive film and the second conductive film was inferior to the connection reliability in Example 1.
    • Example 2
  • In Example 2, a structure including the first conductive film and the second conductive film was obtained in the same manner as in Example 1 except that as the substrate, a film-shaped substrate constituted by a biaxial stretched polyethylene terephthalate (PET) was used. In addition, the structure that was obtained is applicable to the light-emitting device according to the first embodiment.
  • Also in Example 2, the transition region, in which the transparent conductive material and the metal material were mixed, was formed between the first conductive film and the second conductive film. According to this, it can be seen that Example 2 is excellent in the connection reliability between the first conductive film and the second conductive film.
  • Hereinbefore, embodiments and Examples have been described with reference to the accompanying drawings. However, these are illustrative only, and various configurations other than embodiments and Examples can be employed.
  • Priority is claimed on Japanese Patent Application No. 2013-75996, filed Apr. 1, 2013, the content of which is incorporated herein by reference.

Claims (3)

1. A method of forming an optical device comprising a substrate, a first conductive film, and a second conductive film comprising:
forming the second conductive film on the substrate,
forming the first conductive film on the second conductive film; and
making a heat treatment to the first conductive film and the second conductive film.
2. The method of forming an optical device according to claim 1, wherein the first conductive film and the second conductive film are formed by a coating solution.
3. The method of forming an optical device according to claim 1, wherein the second conductive film is not sintered when the first conductive film is formed.
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