US20180033928A1 - Light emitting diode assembly structure - Google Patents

Light emitting diode assembly structure Download PDF

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Publication number
US20180033928A1
US20180033928A1 US15/472,203 US201715472203A US2018033928A1 US 20180033928 A1 US20180033928 A1 US 20180033928A1 US 201715472203 A US201715472203 A US 201715472203A US 2018033928 A1 US2018033928 A1 US 2018033928A1
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United States
Prior art keywords
light emitting
emitting diode
assembly structure
diode assembly
light
Prior art date
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Abandoned
Application number
US15/472,203
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English (en)
Inventor
Chih-Wei Chang
Zhi-Ting YE
Shyi-Ming Pan
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Harvatek Corp
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Harvatek Corp
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Assigned to HARVATEK CORPORATION reassignment HARVATEK CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHANG, CHIH-WEI, PAN, SHYI-MING, YE, Zhi-ting
Publication of US20180033928A1 publication Critical patent/US20180033928A1/en
Priority to US16/655,268 priority Critical patent/US10944032B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the subject matter herein generally relates to light emitting diode assembly structures.
  • Light emitting diode products can be seen everywhere, such as traffic signals, automobile lamps, street lamps, lights or flashlights. These light emitting diode products need to process the light emitting chip, and the light emitting chip needs to be packaged with a light emitting diode assembly structure.
  • the light emitting diode assembly structure improves the power supply to the light emitting chip and improves light radiation efficiency of the light emitting chip.
  • the light emitting chip When the light emitting chip is exposed to an atmosphere for a long time, there may be deteriorated due to an influence of chemicals in the atmosphere or other environment, thereby causing the light emitting chip accelerated deterioration.
  • the light emitting chip may be coated with a high-transparency epoxy resin, which effectively seals out the atmosphere.
  • a suitable packaging substrate can provide better protection for the light emitting diode assembly structure, and a life of the light emitting chip may be improved.
  • using the high transparency epoxy resin limits light emission from the light emitting chip and the light extracting efficiency is low.
  • Optical design is also an important part of the packaging process.
  • a secondary optical lens may be arranged on the light emitting diode, which can change the light emitting angles.
  • the secondary optical lens is not easy to assemble, and increases cost.
  • the present disclosure provides a light emitting diode assembly structure having a light guiding member and a reflecting member.
  • the light emitting diode assembly structure includes a light emitting chip, a color converting layer, a light guiding member, and a reflecting member.
  • the color converting layer is coated on the light emitting chip.
  • the light guiding member is arranged over the color converting layer.
  • the reflecting member is arranged over the light guiding member.
  • the reflecting member comprises a first reflecting surface faced towards the light emitting chip, and wherein the first reflecting surface is a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the light guiding member is coated on the color converting layer.
  • the light guiding member is arranged on a top surface of the color converting layer
  • the light emitting chip is selected from the group consisting of a horizontal type light emitting diode chip, a vertical type light emitting diode chip, a flip chip type light emitting diode chip, and a combination thereof.
  • the light emitting diode assembly structure further includes a substrate arranged on a bottom surface of the light emitting chip.
  • the substrate includes a second reflecting surface faced towards the first reflecting surface of the reflecting member.
  • the light guiding member includes silicon and additional material.
  • the weight of the additional material is within a range of about 5% to about 15% of the weight of the silicon.
  • the additional material is selected from the group consisting of organic diffusion particles, inorganic diffusion particles, and a combination thereof.
  • a refractive index of the silicon is substantially in a range of 1.4 to 1.6.
  • a refractive index of the additional material is substantially in a range of 1.5 to 1.8.
  • the organic diffusion particles comprise an organic silicone compound or an acrylic compound.
  • the inorganic diffusion particles comprise silica or a calcium carbonate compound.
  • the light emitting diode assembly structure includes a light emitting chip, a color converting layer, a light guiding member, and a reflecting member.
  • the light guiding member is arranged over the color converting layer.
  • the color converting layer is arranged over the light guiding member.
  • the reflecting member is arranged over the color converting layer.
  • the reflecting member comprises a first reflecting surface faced towards the light emitting chip, and wherein the first reflecting surface is a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the light guiding member is coated on the light emitting chip, and the color converting layer is coated on the light guiding member.
  • the light guiding member is arranged on the light emitting chip, and the light guiding member and the light emitting chip are coated by the color converting layer.
  • the reflecting member comprises a first reflecting surface faced towards the light emitting chip.
  • the first reflecting surface is selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the light emitting chip is selected from the group consisting of a horizontal type light emitting diode chip, a vertical type light emitting diode chip, a flip chip type light emitting diode chip, and a combination thereof.
  • the light emitting diode assembly structure further comprises a substrate arranged on a bottom surface of the light emitting chip.
  • the substrate comprises a second reflecting surface faced towards the first reflecting surface of the reflecting member.
  • the light guiding member includes silicon and additional material.
  • the weight of the additional material is within a range of about 5% to about 15% of the weight of the silicon.
  • the additional material is selected from the group consisting of organic diffusion particles, inorganic diffusion particles, and a combination thereof.
  • a refractive index of the silicon is substantially in a range of 1.4 to 1.6.
  • a refractive index of the additional material is substantially in a range of 1.5 to 1.8.
  • the organic diffusion particles comprise an organic silicone compound or an acrylic compound.
  • the inorganic diffusion particles comprise silica or a calcium carbonate compound.
  • the light emitting diode assembly structure includes a light emitting chip, a color converting layer, a light guiding member, and a reflecting member.
  • the color converting layer is coated on the light emitting chip.
  • the reflecting member is arranged around a side of the color converting layer.
  • the light guiding member is coated on a periphery of the color converting layer and the reflecting member.
  • An inner surface of the reflecting member includes a reflecting surface faced towards the light emitting chip. The reflecting surface is symmetrical or asymmetrical under all rotations about its center.
  • the reflecting surface is selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the light guiding member includes a light exiting surface faced towards the light emitting chip.
  • the light exiting surface is a continuous or discontinuous structure.
  • the light exiting surface is substantially planar, arc-shaped, n-shaped, or v-shaped.
  • a width of the cross-section of the reflecting member increases gradually in a direction away from the light emitting chip.
  • the reflecting surface is a sealed and continuous surface.
  • the reflecting member is a substantially frustum.
  • the light guiding member includes silicon and additional material.
  • the weight of the additional material is within a range of about 5% to about 15% of the weight of the silicon.
  • the additional material is selected from the group consisting of organic diffusion particles, inorganic diffusion particles, and a combination thereof.
  • a refractive index of the silicon is substantially in a range of 1.4 to 1.6.
  • a refractive index of the additional material is substantially in a range of 1.5 to 1.8.
  • the organic diffusion particles comprise an organic silicone compound or an acrylic compound.
  • the inorganic diffusion particles comprise silica or a calcium carbonate compound.
  • a light emitting diode assembly structure includes a light emitting chip, a color converting layer coated on the light emitting chip, a light guiding member arranged over the light emitting chip, and a reflecting member arranged over the light guiding member.
  • the reflecting member comprises a first reflecting surface faced towards the light emitting chip, and wherein the first reflecting surface is a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting member comprises a top surface and a bottom surface, and wherein the reflecting member arranges a groove. The groove penetrates the top and bottom surfaces of the reflecting member.
  • the groove is substantially symmetrical under all rotations about its center.
  • the groove is a cross-shaped groove or a circular groove.
  • a width of the groove is in a range from substantially 0.05 mm to substantially 0.3 mm.
  • the groove comprises an upper end portion opposite to the light guiding member and a lower end portion adjacent to the light guiding member, and wherein a width of the upper end portion is more than or equal to a width of the lower end portion.
  • the light guiding member includes silicon and additional material.
  • the weight of the additional material is within a range of about 5% to about 15% of the weight of the silicon.
  • the additional material is selected from the group consisting of organic diffusion particles, inorganic diffusion particles, and a combination thereof.
  • a refractive index of the silicon is substantially in a range of 1.4 to 1.6.
  • a refractive index of the additional material is substantially in a range of 1.5 to 1.8.
  • the organic diffusion particles comprise an organic silicone compound or an acrylic compound.
  • the inorganic diffusion particles comprise silica or a calcium carbonate compound.
  • a light emitting diode assembly structure includes a light emitting chip, a color converting layer coated on the light emitting chip, a light guiding member arranged over the light emitting chip, and a reflecting member, arranged over the light guiding member.
  • the reflecting member comprises a first reflecting surface faced towards the light emitting chip, and wherein the first reflecting surface is a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting member comprises a first top surface and a first bottom surface.
  • the light guiding member comprises a second top surface and a second bottom surface.
  • the light emitting diode assembly structure arranges a groove.
  • the groove penetrates from the first top surface of the reflecting member to a predetermined position between the second top surface of the light guiding member and the second bottom surface of the light guiding member.
  • the groove is substantially symmetrical under all rotations about its center.
  • the groove is a cross-shaped groove or a circular groove.
  • a width of the groove is in a range from substantially 0.05 mm to substantially 0.3 mm.
  • the groove comprises an upper end portion opposite to the color converting layer and a lower end portion adjacent to the color converting layer, and wherein a width of the upper end portion is more than or equal to a width of the lower end portion.
  • the light guiding member includes silicon and additional material.
  • the weight of the additional material is within a range of about 5% to about 15% of the weight of the silicon.
  • the additional material is selected from the group consisting of organic diffusion particles, inorganic diffusion particles, and a combination thereof.
  • a refractive index of the silicon is substantially in a range of 1.4 to 1.6.
  • a refractive index of the additional material is substantially in a range of 1.5 to 1.8.
  • the organic diffusion particles comprise an organic silicone compound or an acrylic compound.
  • the inorganic diffusion particles comprise silica or a calcium carbonate compound.
  • the light guiding member directs the light emitted by the light emitting chip to irradiate towards the reflecting surface of reflecting member, so the radiated light can be reflected toward the exterior of the package, facilitate to the light emitted by the light emitting chip changing a light guiding path and a light pattern.
  • FIG. 1A is a schematic view of a light emitting diode assembly structure according to a first exemplary embodiment, the assembly including a reflecting member and a light guiding member.
  • FIG. 1B is a schematic view of a light path of the light emitting diode assembly structure according to the first exemplary embodiment.
  • FIG. 2A is a schematic view of the reflecting member in a first mode according to the first exemplary embodiment.
  • FIG. 2B is a schematic view of the reflecting member in a second mode according to the first exemplary embodiment.
  • FIG. 2C is a schematic view of the reflecting member in a third mode according to the first exemplary embodiment.
  • FIG. 2D is a schematic view of the reflecting member in a fourth mode according to the first exemplary embodiment.
  • FIG. 3 is a schematic view of a light emitting diode assembly structure according to a second exemplary embodiment.
  • FIG. 4 is a schematic view of a light emitting diode assembly structure according to a third exemplary embodiment.
  • FIG. 5 is a schematic view of a light emitting diode assembly structure according to a fourth exemplary embodiment.
  • FIG. 6A is a schematic view of a light emitting diode assembly structure according to a fifth exemplary embodiment, the assembly including a reflecting member and a light guiding member.
  • FIG. 6B is a schematic view of a light path of the light emitting diode assembly structure of the fifth exemplary embodiment.
  • FIG. 6C is a schematic view of an angle in one mode of the fifth exemplary embodiment reflecting member.
  • FIG. 6D is a schematic view of the angle in a second mode of the fifth exemplary embodiment reflecting member.
  • FIG. 7A is a schematic view of the reflecting member in a first mode according to the fifth exemplary embodiment.
  • FIG. 7B is a schematic view of the reflecting member in a second mode according to the fifth exemplary embodiment.
  • FIG. 7C is a schematic view of the reflecting member in a third mode according to the fifth exemplary embodiment.
  • FIG. 8A is a schematic view of the light guiding member according to the fifth exemplary embodiment in first mode.
  • FIG. 8B is a schematic view of the fifth exemplary embodiment light guiding member in a second mode.
  • FIG. 8C is a schematic view of the fifth exemplary embodiment light guiding member in a third mode.
  • FIG. 8D is a schematic view of the fifth exemplary embodiment light guiding member in a fourth mode.
  • FIG. 8E is a schematic view of the fifth exemplary embodiment light guiding member in a fifth mode.
  • FIG. 8F is a schematic view of the fifth exemplary embodiment light guiding member in a sixth mode.
  • FIG. 9A is a schematic view of a light emitting diode assembly structure in a first mode according to a sixth exemplary embodiment, the assembly including a reflecting member, the light emitting diode assembly structure arranges a groove penetrating a first top and bottom surfaces of the reflecting member.
  • FIG. 9B is a schematic view of the light emitting diode assembly structure in a second mode according to the sixth exemplary embodiment.
  • FIG. 10A is a top view of the light emitting diode assembly structure in one mode according to the sixth exemplary embodiment.
  • FIG. 10B is a top view of the light emitting diode assembly structure in another mode according to the sixth exemplary embodiment.
  • FIG. 11A is a schematic view of a light emitting diode assembly structure in a first mode according to a seventh exemplary embodiment, the assembly including a reflecting member and a light guiding member, the light emitting diode assembly structure arranges a groove penetrating a first top and bottom surfaces of the reflecting member and the light guiding member respectively.
  • FIG. 11B is a schematic view of the light emitting diode assembly structure in a second mode according to the seventh exemplary embodiment.
  • FIG. 12 is a schematic view of the light emitting diode assembly structure according to an eighth exemplary embodiment.
  • FIG. 13 is a schematic view of the light emitting diode assembly structure according to a ninth exemplary embodiment.
  • FIG. 14 is a schematic view of the light emitting diode assembly structure according to a tenth exemplary embodiment.
  • FIG. 15 is a schematic view of the light emitting diode assembly structure according to an eleventh exemplary embodiment.
  • FIG. 16 is a schematic view of the light emitting diode assembly structure according to an twelfth exemplary embodiment.
  • FIG. 17 is a schematic view of the light emitting diode assembly structure according to a thirteenth exemplary embodiment.
  • substantially means essentially conforming to the particular dimension, shape or other feature that the term modifies, such that the component need not be exact.
  • substantially cylindrical means that the object resembles a cylinder, but may have one or more deviations from a true cylinder.
  • comprising or “containing” when utilized, means “including, but not necessarily limited to”; it specifically indicates open-ended inclusion or membership in the so-described combination, group, series and the like.
  • directing is intended to mean providing a path or passage for something from one position into a destination position.
  • the terms “first”, “second”, “third” and other terms in the present disclosure are only used as textual symbols as the circumstances may require, but such ordination is not limited to using only these terms. It should be further noted that these terms can be used interchangeably.
  • the present disclosure is described in relation to a light emitting diode assembly structure.
  • a light emitting diode assembly structure 1 includes a package 10 and a light emitting chip 20 coated by the package 10 .
  • the package 10 includes a color converting layer 30 , a light guiding member 40 , and a reflecting member 50 .
  • the light emitting chip 20 is coated by the color converting layer 30 .
  • the color converting layer 30 is coated by the light guiding member 40 .
  • the reflecting member 50 is arranged over the light guiding member 40 .
  • the light emitting diode assembly structure 1 enables a wider angle of radiation of light emitted by the light emitting chip 20 .
  • the light emitting chip 20 may be a chip selected from the group consisting of a horizontal type light emitting diode chip, a vertical type light emitting diode chip, a flip chip type light emitting diode chip, and a combination thereof.
  • the type of light emitting chip 20 may be changed as desired by the user.
  • the color converting layer 30 is configured for changing a color of the light emitted by the light emitting chip 20 .
  • the color converting layer 30 may change the color of the light emitted by the light emitting chip 20 according to the preference of a user.
  • the light guiding member 40 may include, but is not limited to, polymerized siloxanes (i.e., silicon).
  • the light guiding member 40 is any material with high transparency for coating the light emitting chip 20 .
  • the light guiding member 40 is configured to adjust the illumination range of the light emitted by the light emitting chip 20 and to guide the light to reach a pre-determined position.
  • the light guiding member 40 may further include additional material, so the light emitted by the light emitting chip 20 can be uniformly irradiated toward an exterior of the light emitting diode assembly structure 1 .
  • the weight of the additional material is within a range of about 5% to about 15% of the weight of the silicon.
  • the additional material may include, but is not limited to, organic diffusion particles, inorganic diffusion particles, or any combination thereof.
  • a refractive index of the silicon is substantially in a range of 1.4 to 1.6.
  • a refractive index of the additional material is substantially in a range of 1.5 to 1.8.
  • the refractive index of the silicon is preferably different from the refractive index of the additional material.
  • the organic diffusion particles may include, but is not limited to, an organic silicone compound or an acrylic compound.
  • the inorganic diffusion particles may include, but is not limited to, silica (SiO 2 ), titanium dioxide (TiO 2 ) or a calcium carbonate compound.
  • the organic silicone compound may be, but is not limited to, silicone rubber, silicone resin, or silicone oil.
  • the acrylic compound may be, but is not limited to, poly(1-carboxyethylene), polymethyl methacrylate (PMMA), polytetrafluoroethylene (PTFE).
  • a thickness of the light guiding member 40 may be preferably 0.4 mm.
  • the reflecting member 50 includes a first reflecting surface 501 .
  • the first reflecting surface 501 is faced towards the light emitting chip 20 .
  • the first reflecting surface 501 may be planar or non-planar.
  • a thickness of the reflecting member 50 may be preferably 0.4 mm.
  • a color of the first reflecting surface 501 may be a weak or faint color, in order to enhance an emission rate of the light emitted by the light emitting chip 20 .
  • the overall color of the first reflecting surface 501 is preferably silver or white.
  • the light emitting chip 20 emits light 100 .
  • the light 100 passes through the color converting layer 30 , which can change the color of the light 100 to a desired color.
  • the light 100 passing through the color converting layer 30 is entered into the light guiding member 40 . Therefore, the light 100 can be directed within the light guiding member 40 until the light 100 is irradiated to the reflecting member 50 .
  • the light 100 irradiates towards the first reflecting surface 501 , most of the light 100 is reflected around the light emitting chip 20 .
  • the light 100 emitted by the light emitting chip 20 forms a first reflection by the first reflecting surface 501 , and the light 100 reflected by the first reflecting surface 501 passes through the light guiding member 40 , so the light 100 may be transmitted towards the exterior of the package 10 .
  • the package 10 further includes a substrate 60 .
  • the substrate 60 defines a second reflecting surface 61 faced towards the first reflecting surface 501 of the reflecting member 50 .
  • the light emitting chip 20 , the color converting layer 30 , and the light guiding member 40 are arranged on the second reflecting surface 61 of the substrate 60 .
  • the light 100 reflected by the first reflecting surface 501 irradiates towards the second reflecting surface 61 of the substrate 60 .
  • the light 100 emitted by the light emitting chip 20 forms a second reflection by the second reflecting surface 61 after the light 100 reflected by the first reflecting surface 501 , so the illuminating range of the light 100 can be enlarged.
  • the light emitting diode assembly structure 1 includes the light guiding member 40 , the reflecting member 50 with the first reflecting surface 501 , and the substrate 60 with a second reflecting surface 61 .
  • the light guiding member 40 is formed on the exterior of the light emitting chip 20 and the color converting layer 30 . Therefore, the light 100 emitted by the light emitting chip 20 enters into the light guiding member 40 .
  • the light guiding member 40 directs the light 100 to irradiate towards the first reflecting surface 501 of the reflecting member 50 .
  • the light 100 emitted by the light emitting chip 20 forms the first reflection by the first reflecting surface 501 , and the light 100 reflected by the first reflecting surface 501 irradiates towards the exterior of the light emitting chip 20 . Furthermore, when the light 100 passes through the light guiding member 40 , the light 100 may be transmitted further according to a material property of the light guiding member 40 . Thus, a reflected angle range of the light 100 reflected by the reflecting member 50 can be enlarged, to facilitate a larger illuminating range.
  • the light emitting chip 20 is arranged on the second reflecting surface 61 of the substrate 60 .
  • the light 100 reflected by the first reflecting surface 501 of the reflecting member 50 may irradiate towards the second reflecting surface 61 of the substrate 60 .
  • the light 100 emitted by the light emitting chip 20 forms the second reflection by the second reflecting surface 61 , so the illuminating range of the light 100 is wider than the light directly emitted by a light emitting chip.
  • Light emitted by a light emitting chip of existing art is subjected to only one reflection.
  • a light emitting diode assembly structure 1 includes a package 10 and a light emitting chip 20 coated by the package 10 .
  • the package 10 includes a color converting layer 30 , a light guiding member 40 and a reflecting member 50 .
  • the light emitting chip 20 , the color converting layer 30 , the light guiding member 40 and the reflecting member 50 are consistent features among the structures of the first exemplary embodiment.
  • the difference in a first mode according to the first exemplary embodiment is that the reflecting member 50 defines a reflecting surface 501 different from the first exemplary embodiment, and a top surface of the light guiding member 40 defines a structure according to the reflecting surface 501 .
  • the reflecting surface 501 is faced towards the light emitting chip 20 .
  • the reflecting surface 501 may be a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting surface 501 may be symmetrical or asymmetrical under all rotations about its center.
  • the light guiding member 40 includes a convex structure adjacent to the reflecting surface 501 of the reflecting member 50 , and the reflecting surface 501 of the reflecting member 50 includes a concave structure.
  • the concave structure of the reflecting surface 501 is faced towards the light emitting chip 20 .
  • the reflecting surface 501 of the reflecting member 50 is symmetrical under all rotations about its center.
  • the light emitted by the light emitting chip 20 is reflected by the concave structure of the reflecting surface 501 .
  • the light may irradiate within the package 10 , so concentrating the light and making it brighter.
  • the light guiding member 40 includes a concave structure adjacent to the reflecting surface 501 of the reflecting member 50 , and the reflecting surface 501 of the reflecting member 50 includes a convex structure.
  • the convex structure of the reflecting surface 501 is faced towards the light emitting chip 20 .
  • the reflecting surface 501 of the reflecting member 50 is symmetrical under all rotations about its center. The light emitted by the light emitting chip 20 is reflected by the concave structure of the reflecting surface 501 , so the light may travel toward the exterior of the package 10 , to facilitate a wider illumination range.
  • one side of the light guiding member 40 includes a first concave structure and the other side of the light guiding member 40 includes a first convex structure.
  • the first concave structure and the first convex structure cooperatively form a top surface of the light guiding member 40 .
  • the reflecting surface 501 of the reflecting member 50 is asymmetrical.
  • the reflecting surface 501 includes a first side and a second side.
  • the first side of the reflecting surface 501 includes a second convex structure and the second side of the reflecting surface 501 includes a second concave structure.
  • the second concave structure of the reflecting surface 501 and the second convex structure of the reflecting surface 501 cooperatively form the reflecting surface 501 .
  • the reflecting surface 501 is substantially S-shaped.
  • the second concave structure and the second convex structure of the reflecting surface 501 are faced towards the light emitting chip 20 .
  • the light emitted by the light emitting chip 20 is reflected by the second concave structure of the reflecting surface 501 .
  • the light irradiating the second convex structure of the reflecting surface 501 is reflected toward the exterior of the package 10 , to facilitate the wider illumination range.
  • the light irradiating the second concave structure of the reflecting surface 501 is reflected toward the inside of the package 10 , so concentrating the light and making it brighter.
  • one side of the light guiding member 40 includes a first convex structure and the other side of the light guiding member 40 includes a second convex structure symmetrical in the first convex structure.
  • the first convex structure and the second convex structure cooperatively form a top surface of the light guiding member 40 .
  • the reflecting surface 501 of the reflecting member 50 is symmetrical under all rotations about its center.
  • the reflecting surface 501 includes a first side and a second side.
  • the first side of the reflecting surface 501 includes a first concave structure 5011 and the second side of the reflecting surface 501 includes a second concave structure 5012 .
  • the first concave structure 5011 of the reflecting surface 501 and the second convex structure 5012 of the reflecting surface 501 cooperatively form the reflecting surface 501 .
  • a third convex structure 5013 is formed between the first concave structure and the second concave structure of the reflecting surface 501 .
  • the third convex structure 5013 is faced towards the light emitting chip 20 .
  • the light emitted by the light emitting chip 20 is reflected by the concave structure of the reflecting surface 501 .
  • the light irradiating the first and second convex structures of the reflecting surface 501 is reflected toward the exterior of the package 10 , to widen the illumination range.
  • the light irradiating the third convex structure 5013 of the reflecting surface 501 is reflected towards the inside of the package 10 , to make the light brighter.
  • a light emitting diode assembly structure 2 includes a package 10 and a light emitting chip 20 coated by the package 10 .
  • the package 10 includes a color converting layer 30 , a light guiding member 40 and a reflecting member 50 .
  • the light emitting chip 20 , the color converting layer 30 , the light guiding member 40 , and the reflecting member 50 are substantially consistent features among the structures of the first exemplary embodiment. The difference is that the light emitting chip 20 is coated by the light guiding member 40 , the light guiding member 40 is coated by the color converting layer 30 , and the reflecting member 50 is arranged above the color converting layer 30 .
  • the light emitting chip 20 may be a chip selected from the group consisting of a horizontal type light emitting diode chip, a vertical type light emitting diode chip, a flip chip type light emitting diode chip, and a combination thereof. A user may select or change any one of these.
  • the reflecting member 50 may change according to the first exemplary embodiment in the above modes or a combination thereof.
  • the reflecting surface 501 may be a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting surface 501 may be symmetrical or asymmetrical under all rotations about its center.
  • a light emitting diode assembly structure 3 includes a package 10 and a light emitting chip 20 coated by the package 10 .
  • the package 10 includes a color converting layer 30 , a light guiding member 40 and a reflecting member 50 .
  • the light emitting chip 20 , the color converting layer 30 , the light guiding member 40 and the reflecting member 50 are substantially consistent features among the structures of the first exemplary embodiment. The difference is that the color converting layer 30 is not coated by the light guiding member 40 , and the light guiding member 40 is arranged above the color converting layer 30 and faced towards the light emitting chip 20 .
  • the light emitting chip 20 may be selected from the group consisting of a horizontal type light emitting diode chip, a vertical type light emitting diode chip, a flip chip type light emitting diode chip, and a combination thereof.
  • the reflecting member 50 may change according to the first exemplary embodiment in the above modes or a combination thereof.
  • the reflecting surface 501 may be a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting surface 501 may be symmetrical or asymmetrical under all rotations about its center.
  • a light emitting diode assembly structure 4 includes a package 10 and a light emitting chip 20 coated by the package 10 .
  • the package 10 includes a color converting layer 30 , a light guiding member 40 , and a reflecting member 50 .
  • the light emitting chip 20 , the color converting layer 30 , the light guiding member 40 and the reflecting member 50 are substantially consistent features among the structures of the first exemplary embodiment. The difference is that the light guiding member 40 is arranged above the light emitting chip 20 and is coated by the color converting layer 30 , and the reflecting member 50 is arranged above the color converting layer 30 .
  • the light emitting chip 20 may be selected from the group consisting of a horizontal type light emitting diode chip, a vertical type light emitting diode chip, a flip chip type light emitting diode chip, and a combination thereof.
  • the reflecting member 50 is applicable to the reflecting member 50 according to the first exemplary embodiment in the above modes or a combination thereof.
  • the reflecting surface 501 may be a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting surface 501 may be symmetrical or asymmetrical under all rotations about its center.
  • a light emitting diode assembly structure 5 includes a package 10 A and a light emitting chip 20 A coated by the package 10 A.
  • the package 10 A includes a color converting layer 30 A, a light guiding member 40 A, and a reflecting member 50 A.
  • the light emitting chip 20 A is coated by the color converting layer 30 A.
  • the light guiding member 40 A is arranged around a periphery of the color converting layer 30 A.
  • the reflecting member 50 A is arranged on an inner surface of the light guiding member 40 A.
  • the reflecting member 50 A is arranged around a periphery of the light emitting chip 20 A.
  • a width of the cross-section of the reflecting member 50 A increases gradually in a direction away from the light emitting chip 20 A.
  • the reflecting member 50 A includes a reflecting surface 501 A facing to the light emitting chip 20 A.
  • the reflecting surface 501 A and a lower surface of the light guiding member 40 A form an angle ⁇ .
  • the angle ⁇ is an obtuse angle. That is, the angle ⁇ is substantially in a range of more than 90 degrees to less than 180 degrees.
  • the light emitted by the light emitting chip 20 A is irradiated onto the reflecting surface 501 A, and then reflected toward an exterior of the package 10 A.
  • the reflecting surface 501 A may be planar or non-planar.
  • a color of the reflecting surface 501 A may be a weak or faint color, in order to enhance an emission rate of the light emitted by the light emitting chip 20 A.
  • the overall color of the reflecting surface 501 A is preferably silver or white.
  • the light emitting chip 20 A emits a light 100 A.
  • the light 100 A passes through the color converting layer 30 A, which can change the color of the light 100 A to a desired color.
  • a portion of the light 100 A is directly irradiated towards the exterior of the package body 10 A, the other portion of the light 100 A irradiates towards the reflecting surface 501 A of the reflecting member 50 A.
  • the light is then reflected towards the exterior of the package 10 A, so the irradiation range of the light 100 A is enlarged, to facilitate external irradiation.
  • FIG. 6C and FIG. 6D are a top plan schematic view of light emitting diode assembly structure 5 .
  • the reflecting member 50 A includes a front panel 51 A, a rear panel 52 A, a first side panel 53 A, and a second side panel 54 A.
  • the front panel 51 A and the rear panel 52 A may be symmetrical or asymmetrical.
  • the first side panel 53 A and the second side panel 54 A may be symmetrical or asymmetrical.
  • the front panel 51 A, the rear panel 52 A, the first side panel 53 A, and the second side panel 54 A are separately constructed in a trapezoidal shape.
  • the front panel 51 A and the rear panel 52 A are symmetrical, the first side panel 53 A and the second side panel 54 A are also symmetrical, and a size of the front panel 51 A is different from a size of the first side panel 54 A.
  • the reflecting member 50 A is substantially a frustum. Bottom and upper ends of the reflecting member 50 A cooperatively form a rectangular shape. Each trapezoidal shape includes a wider upper part 55 A and a narrower lower part 56 A, to facilitate stronger irradiation of the reflecting surface 501 A.
  • An inner surface of the front panel 51 A, the rear panel 52 A, the first side panel 53 A, and the second side panel 54 A cooperatively form the reflecting surface 501 A.
  • the reflecting surface 501 A is a sealed and continuous structural surface, to facilitate greater external illumination.
  • the front panel 51 A, the rear panel 52 A, the first side panel 53 A, and the second side panel 54 A may be separately constructed and of any shape, to facilitate more irradiation of the reflecting surface 501 A.
  • the reflecting member 50 A is a substantially consistent feature among the structures of the first mode of FIG. 6C .
  • the front panel 51 A, the rear panel 52 A, the first side panel 53 A, and the second side panel 54 A have the same trapezoidal shape.
  • the trapezoidal shape is an isosceles trapezium. Bottom and upper ends of the reflecting member 50 A cooperatively form a square shape.
  • Each trapezoidal shape has a base angle ⁇ adjacent to the light emitting chip 20 A. The base angle ⁇ can be adjusted according to the preference of the user, so the light emitted by the light emitting chip 20 A may change its light path, for different emission angles. Therefore, the illuminating efficiency of the light may be improved.
  • the light emitting chip 20 may be selected from the group consisting of a horizontal type light emitting diode chip, a vertical type light emitting diode chip, a flip chip type light emitting diode chip, and a combination thereof.
  • the light emitting diode assembly structure 5 is a substantially consistent feature among the structures of the fifth exemplary embodiment.
  • the difference is that the reflecting member 50 A defines a different structure of the reflecting surface 501 A.
  • the reflecting surface 501 A of the reflecting member 50 A is arranged around the periphery of the light emitting chip 20 .
  • the reflecting surface 501 A may be a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting surface 501 may be symmetrical or asymmetrical under all rotations about its center.
  • the configuration of the reflecting surface 501 A can be changed according to the preference of the user, so the structure of the reflecting surface 501 A is not limited to that of the above exemplary embodiment.
  • the combined structure of the light guiding member 40 A and the reflective member 50 A is not limited to the fixed form structure shown in the above-described exemplary embodiment.
  • the base angle ⁇ of each trapezoidal shape of the reflective member 50 A can be adjusted according to the preference of the user.
  • the reflecting surface 501 A of the reflective member 50 A is a convex structure.
  • the light emitted by the light emitting chip 20 A is reflected by the reflecting surface 501 A of the reflective member 50 A.
  • the light irradiating the convex structure of the reflecting surface 501 A is reflected towards the exterior of the package 10 A, to facilitate an enlarged irradiation range.
  • the reflecting surface 501 A of the reflective member 50 A is a concave structure.
  • the light emitted by the light emitting chip 20 A is reflected by the reflecting surface 501 A of the reflective member 50 A.
  • the light irradiating the concave structure of the reflecting surface 501 A is reflected toward the inside surface of the package 10 A, so concentrating the light and making it brighter.
  • the reflecting surface 501 A of the reflective member 50 A is a plane.
  • the reflecting surface 501 A and the bottom surface of the light emitting chip 20 A form an angle ⁇ facing the light emitting chip 20 A.
  • the angle ⁇ may preferably be in a range of more than 90 degrees to less than 180 degrees.
  • the light emitted by the light emitting chip 20 A is reflected by the reflecting surface 501 A of the reflective member 50 A.
  • the angle ⁇ is less than 90 degrees, most of the light irradiating the reflecting surface 501 A is reflected toward the inside surface of the package 10 A, so concentrating the light and making it brighter.
  • the angle ⁇ is more than 90 degrees, most of the light irradiating the reflecting surface 501 A is reflected towards the exterior of the package 10 A for enlarging irradiation.
  • the light emitting diode assembly structure 5 has substantially consistent features among the structures of the fifth exemplary embodiment.
  • the color converting layer 30 A covers the light emitting chip 20 A, and the reflection member 50 A is arranged at the side of the color converting layer 30 A.
  • the light guiding member 40 A covers the periphery of the color converting layer 30 A and the reflective member 50 A. The difference is that the light guiding member 40 A defines different structures.
  • the light guiding member 40 A includes a light exiting surface 401 A faced towards the light emitting chip 20 A.
  • the structure of the light exiting surface 401 A may present a continuous surface or a discontinuous surface.
  • the continuous and the discontinuous surface structures may be a plane surface, an arc surface, a n-shaped surface, and a v-shaped surface.
  • the light exiting surface 401 A in a first mode according to the fifth exemplary embodiment, is a plane surface. As shown in FIG. 8B , in a second mode according to the fifth exemplary embodiment, the light exiting surface 401 A is an arc surface. As shown in FIG. 8C , in a third mode according to the fifth exemplary embodiment, the light exiting surface 401 A is a discontinuous and v-shaped groove surface. As shown in FIG. 8D , in a fourth mode according to the fifth exemplary embodiment, the light exiting surface 401 A is a discontinuous and arced surface. As shown in FIG.
  • the light exiting surface 401 A in a fifth mode according to the fifth exemplary embodiment, is a discontinuous and n-shaped structure. As shown in FIG. 8F , in a sixth mode according to the fifth exemplary embodiment, the light exiting surface 401 A is a continuous and v-shaped groove surface.
  • the light exiting surface 401 A defines the plane surface, the arc surface, the n-shaped surface, and the v-shaped groove surface, facilitating any desired changes to the path and pattern of the light emitted by the light emitting chip 20 A.
  • a light emitting diode assembly structure 6 is disclosed herein.
  • the light emitting diode assembly structure 6 is a substantially consistent feature among the structures of the first exemplary embodiment.
  • the reflecting member 50 includes a top surface 51 opposite to the light guiding member 40 and a bottom surface 52 in contact with the light guiding member 40 .
  • the difference is that the light emitting diode assembly structure 6 arranges a groove 70 above the reflective chip 20 , and the groove 70 penetrates the top and bottom surfaces 51 , 52 of the reflecting member 50 .
  • the groove 70 penetrates from the top surface 51 of the reflecting member 50 to the bottom surface 51 of the reflecting member 50 .
  • the groove 70 located over the light emitting chip 20 so the light emitted by the light emitting chip 20 can pass through the groove 70 to the exterior of the package 10 for enhancing irradiation, so the problem that a luminescence of the light emitting chip 20 is too dark is avoid, which is caused by the light exiting surface entirely configured as a reflective surface.
  • the groove 70 may be substantially symmetrical under all rotations about its center.
  • the groove 70 is configured as, but is not limited to, a cross-shaped groove or a circular groove.
  • a width of the groove may be preferably in a range from about 0.05 mm to 0.3 mm.
  • the top surface 51 of the reflecting member 50 is planar surface, and the bottom surface 52 of the reflecting member 50 is the reflecting surface 501 .
  • the top surface 51 of the reflecting member 50 is aligned with the bottom surface 52 of the reflecting member 50 .
  • the groove 70 includes two opposing side walls 701 .
  • Each of the side walls 701 and the bottom surface 502 of the reflecting member 50 form an angle ⁇ opposite to the groove 70 .
  • the angle ⁇ is a range from 90 degrees to more than 180 degrees.
  • the reflecting surface 501 of the reflecting member 50 is the planar surface, the reflecting surface 501 is perpendicular to the side walls 701 .
  • the groove 70 includes an upper end portion 702 opposite to the light guiding member 40 and a lower end portion 703 adjacent to the light guiding member 40 .
  • a width of the upper end portion 702 is more than or equal to a width of the lower end portion 703 .
  • a width of the cross-section of the groove 70 increases gradually in a direction away from the light emitting chip 20 , to facilitate an enhancement of the irradiating efficiency of the light emitting chip 20 .
  • the reflecting member 50 is applicable to the reflecting member 50 according to the first exemplary embodiment in the above modes or a combination thereof.
  • the reflecting surface 501 may be a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting surface 501 may be symmetrical or asymmetrical under all rotations about its center.
  • an angle ⁇ forms between the side wall 701 and the bottom surface of the reflecting member 50 is 90 degrees. That is, the side wall 701 is perpendicular to the bottom surface 502 .
  • a width of the upper end portion 702 is equal to a width of the lower end portion 703 .
  • the cross-section of the groove 70 is configured as a rectangular shape or a cross-shaped structure.
  • an angle ⁇ forms between the side wall 701 and the bottom surface of the reflecting member 50 is more than 90 degrees.
  • a width of the upper end portion 702 is lee than a width of the lower end portion 703 .
  • the cross-section of the groove 70 an inverted trapezoidal shape.
  • the inverted trapezoidal shape can be an isosceles trapezoid and a non-isosceles trapezoid shape.
  • the groove 70 is the cross-shaped groove.
  • the cross-shaped groove divides the reflecting member 50 into four reflecting regions 503 with a same size and symmetrical distribution, so the light emitted by the light emitting chip 20 can uniformly radiate to the surroundings of the package 10 through the reflecting regions 503 .
  • a junction of the cross-shaped groove is aligned with a center of the light emitting chip 20 . Therefore, the light emitted by the light emitting chip 20 is partially irradiated to the exterior of the package 10 passed through the groove 70 , to facilitate an improvement of the light emission luminance.
  • the groove 70 is a circular groove.
  • the circular groove arranges above the light emitting chip 20 .
  • the circular groove arranges on a middle portion of the reflecting member 50 .
  • the reflecting member 50 includes a reflecting region 503 .
  • a diameter of the circular groove is in a range from 0.1 nm to 0.3 nm, so the light emitted by the light emitting chip 20 partially irradiated to the exterior of the package 10 passed through the groove 70 , to facilitate an improvement of the light emission luminance.
  • a light emitting diode assembly structure 7 is disclosed herein.
  • the light emitting diode assembly structure 7 is a substantially consistent feature among the structures of the first exemplary embodiment.
  • the light emitting chip 20 includes a top surface 21 in contact with the light color converting layer 30 and aligned with the reflecting surface 501 of the reflecting member 50 .
  • the light color converting layer 30 includes a top surface 31 in contact with the light guiding member 40 and aligned with the top surface 21 of the light emitting chip 20 .
  • the top surface 31 of the light color converting layer 30 is in opposite to the light emitting chip 20 and aligned with the reflecting surface 501 of the reflecting member 50 .
  • the light guiding member 40 includes a top surface 41 in contact with the reflecting member 50 and a bottom surface 42 in contact with the top surface 31 of the color converting layer 30 .
  • the reflecting member 50 includes a top surface 51 opposite to the light guiding member 40 and a bottom surface 52 in contact with the light guiding member 40 .
  • the light emitting diode assembly structure 7 arranges a groove 70 above the reflective chip 20 , and the groove 70 penetrates the top and bottom 51 , 52 surfaces of the reflecting member 50 and the top and bottom surfaces 41 , 42 of the light guiding member 40 respectively. Specifically, the groove 70 penetrates from the top surface 51 of the reflecting member 50 to the bottom surface 42 of the light guiding member 40 .
  • the top surface 51 of the reflecting member 50 is planar surface, and the bottom surface 52 of the reflecting member 50 is the reflecting surface 501 .
  • the top surface 51 of the reflecting member 50 is aligned with the bottom surface 52 of the reflecting member 50 .
  • the groove 70 includes two opposing side walls 701 .
  • Each of the side walls 701 and the bottom surface 502 of the reflecting member 50 form an angle ⁇ opposite to the groove 70 .
  • the angle ⁇ is in a range from 90 degrees to more than 180 degrees.
  • the groove 70 includes an upper end portion 702 opposite to the color converting layer 30 and a lower end portion 703 adjacent to the color converting layer 30 .
  • a width of the upper end portion 702 is more than or equal to a width of the lower end portion 703 .
  • an angle ⁇ forms between the side wall 701 and the bottom surface of the reflecting member 50 is 90 degrees. That is, the side wall 701 is perpendicular to the bottom surface 502 .
  • a width of the upper end portion 702 is equal to a width of the lower end portion 703 .
  • the cross-section of the groove 70 is a rectangular shape or a cross-shaped structure.
  • an angle ⁇ forms between the side wall 701 and the bottom surface of the reflecting member 50 is more than 90 degrees. It would therefore be understood that a width of the cross-section of the groove 70 increases gradually in a direction away from the light emitting chip 20 , to facilitate an enhancement of the irradiating efficiency of the light emitting chip 20 . That is, a width of the upper end portion 702 is more than a width of the lower end portion 703 .
  • the cross-section of the groove 70 an inverted trapezoidal shape.
  • the inverted trapezoidal shape can be an isosceles trapezoid and a non-isosceles trapezoid shape.
  • the groove 70 is applicable to the reflecting member 50 according to the sixth exemplary embodiment in the above modes or a combination thereof.
  • the groove 70 can be a cross-shaped groove or a circular groove. The features of the trench 70 are not described here.
  • the reflecting member 50 is applicable to the reflecting member 50 according to the first exemplary embodiment in the above modes or a combination thereof.
  • the reflecting surface 501 may be a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting surface 501 may be symmetrical or asymmetrical under all rotations about its center.
  • a light emitting diode assembly structure 8 is disclosed herein.
  • the light emitting diode assembly structure 8 is a substantially consistent feature among the structures of the first exemplary embodiment.
  • the light emitting chip 20 includes a top surface 21 in contact with the light color converting layer 30 and aligned with the reflecting surface 501 of the reflecting member 50 .
  • the light color converting layer 30 includes a top surface 31 in contact with the light guiding member 40 and aligned with the top surface 21 of the light emitting chip 20 .
  • the top surface 31 of the light color converting layer 30 is in opposite to the light emitting chip 20 and aligned with the reflecting surface 501 of the reflecting member 50 .
  • the light guiding member 40 includes a top surface 41 in contact with the reflecting member 50 and a bottom surface 42 in contact with the top surface 31 of the color converting layer 30 .
  • the reflecting member 50 includes a top surface 51 opposite to the light guiding member 40 and a bottom surface 52 in contact with the light guiding member 40 .
  • the light emitting diode assembly structure 8 arranges a groove 70 above the reflective chip 20 , and the groove 70 penetrates the top and bottom 51 , 52 surfaces of the reflecting member 50 and the top surface 41 of the light guiding member 40 respectively. Specifically, the groove 70 penetrates from the top surface 51 of the reflecting member 50 to the top surface 41 of the light guiding member 40 .
  • the groove 70 may penetrate from the top surface 51 of the reflecting member 50 to a predetermined position between the top surface 41 of the light guiding member 40 and the bottom surface 42 of the light guiding member 40 .
  • the groove 70 preferably penetrates from the top surface 51 of the reflecting member 50 to a middle position between the top surface 41 of the light guiding member 40 and the bottom surface 42 of the light guiding member 40 .
  • the groove 70 is applicable to the reflecting member 50 according to the sixth exemplary embodiment in the above modes or a combination thereof.
  • the groove 70 can be a cross-shaped groove or a circular groove. The features of the trench 70 are not described here.
  • the reflecting member 50 is applicable to the reflecting member 50 according to the first exemplary embodiment in the above modes or a combination thereof.
  • the reflecting surface 501 may be a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting surface 501 may be symmetrical or asymmetrical under all rotations about its center.
  • a light emitting diode assembly structure 9 is disclosed herein.
  • the light emitting diode assembly structure 9 is a substantially consistent feature among the structures of the second exemplary embodiment.
  • the reflecting member 50 includes a top surface 51 opposite to the light guiding member 40 and a bottom surface 52 in contact with the light guiding member 40 .
  • the difference is that the light emitting diode assembly structure 9 arranges a groove 70 above the reflective chip 20 , and the groove 70 penetrates the top and bottom surfaces 51 , 52 of the reflecting member 50 .
  • the groove 70 penetrates from the top surface 51 of the reflecting member 50 to the bottom surface 51 of the reflecting member 50 .
  • the groove 70 is applicable to the reflecting member 50 according to the sixth exemplary embodiment in the above modes or a combination thereof.
  • the groove 70 can be a cross-shaped groove or a circular groove. The features of the trench 70 are not described here.
  • the reflecting member 50 is applicable to the reflecting member 50 according to the first exemplary embodiment in the above modes or a combination thereof.
  • the reflecting surface 501 may be a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting surface 501 may be symmetrical or asymmetrical under all rotations about its center.
  • a light emitting diode assembly structure 10 is disclosed herein.
  • the light emitting diode assembly structure 10 is a substantially consistent feature among the structures of the third exemplary embodiment.
  • the reflecting member 50 includes a top surface 51 opposite to the light guiding member 40 and a bottom surface 52 in contact with the light guiding member 40 .
  • the difference is that the light emitting diode assembly structure 10 arranges a groove 70 above the reflective chip 20 , and the groove 70 penetrates the top and bottom surfaces 51 , 52 of the reflecting member 50 .
  • the groove 70 penetrates from the top surface 51 of the reflecting member 50 to the bottom surface 51 of the reflecting member 50 .
  • the groove 70 is applicable to the reflecting member 50 according to the sixth exemplary embodiment in the above modes or a combination thereof.
  • the groove 70 can be a cross-shaped groove or a circular groove. The features of the trench 70 are not described here.
  • the reflecting member 50 is applicable to the reflecting member 50 according to the first exemplary embodiment in the above modes or a combination thereof.
  • the reflecting surface 501 may be a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting surface 501 may be symmetrical or asymmetrical under all rotations about its center.
  • a light emitting diode assembly structure 11 is disclosed herein.
  • the light emitting diode assembly structure 11 is a substantially consistent feature among the structures of the third exemplary embodiment.
  • the light emitting chip 20 includes a top surface 21 in contact with the light color converting layer 30 and aligned with the reflecting surface 501 of the reflecting member 50 .
  • the light color converting layer 30 includes a top surface 31 in contact with the light guiding member 40 and aligned with the top surface 21 of the light emitting chip 20 .
  • the top surface 31 of the light color converting layer 30 is in opposite to the light emitting chip 20 and aligned with the reflecting surface 501 of the reflecting member 50 .
  • the light guiding member 40 includes a top surface 41 in contact with the reflecting member 50 and a bottom surface 42 in contact with the top surface 31 of the color converting layer 30 .
  • the reflecting member 50 includes a top surface 51 opposite to the light guiding member 40 and a bottom surface 52 in contact with the light guiding member 40 .
  • the light emitting diode assembly structure 11 arranges a groove 70 , which penetrates the top and bottom surfaces 51 , 52 of the reflecting member 50 and the top and bottom surfaces 41 , 42 of the light guiding member 40 respectively. Specifically, the groove 70 penetrates from the top surface 51 of the reflecting member 50 to the bottom surface 42 of the light guiding member 40 .
  • the groove 70 is applicable to the reflecting member 50 according to the sixth exemplary embodiment in the above modes or a combination thereof.
  • the groove 70 can be a cross-shaped groove or a circular groove. The features of the trench 70 are not described here.
  • the reflecting member 50 is applicable to the reflecting member 50 according to the first exemplary embodiment in the above modes or a combination thereof.
  • the reflecting surface 501 may be a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting surface 501 may be symmetrical or asymmetrical under all rotations about its center.
  • a light emitting diode assembly structure 12 is disclosed herein.
  • the light emitting diode assembly structure 12 is a substantially consistent feature among the structures of the third exemplary embodiment.
  • the light emitting chip 20 includes a top surface 21 in contact with the light color converting layer 30 and aligned with the reflecting surface 501 of the reflecting member 50 .
  • the light color converting layer 30 includes a top surface 31 in contact with the light guiding member 40 and aligned with the top surface 21 of the light emitting chip 20 .
  • the top surface 31 of the light color converting layer 30 is in opposite to the light emitting chip 20 and aligned with the reflecting surface 501 of the reflecting member 50 .
  • the light guiding member 40 includes a top surface 41 in contact with the reflecting member 50 and a bottom surface 42 in contact with the top surface 31 of the color converting layer 30 .
  • the reflecting member 50 includes a top surface 51 opposite to the light guiding member 40 and a bottom surface 52 in contact with the light guiding member 40 .
  • the light emitting diode assembly structure 11 arranges a groove 70 above the reflective chip 20 , and the groove 70 penetrates the top and bottom 51 , 52 surfaces of the reflecting member 50 and the top surface 41 of the light guiding member 40 respectively. Specifically, the groove 70 penetrates from the top surface 51 of the reflecting member 50 to the top surface 41 of the light guiding member 40 .
  • the groove 70 may penetrate from the top surface 51 of the reflecting member 50 to a predetermined position between the top surface 41 of the light guiding member 40 and the bottom surface 42 of the light guiding member 40 .
  • the groove 70 preferably penetrates from the top surface 51 of the reflecting member 50 to a middle position between the top surface 41 of the light guiding member 40 and the bottom surface 42 of the light guiding member 40 .
  • the groove 70 is applicable to the reflecting member 50 according to the sixth exemplary embodiment in the above modes or a combination thereof.
  • the groove 70 can be a cross-shaped groove or a circular groove. The features of the trench 70 are not described here.
  • the reflecting member 50 is applicable to the reflecting member 50 according to the first exemplary embodiment in the above modes or a combination thereof.
  • the reflecting surface 501 may be a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting surface 501 may be symmetrical or asymmetrical under all rotations about its center.
  • a light emitting diode assembly structure 13 is disclosed herein.
  • the light emitting diode assembly structure 13 is a substantially consistent feature among the structures of the fourth exemplary embodiment.
  • the reflecting member 50 includes a top surface 51 opposite to the light guiding member 40 and a bottom surface 52 in contact with the light guiding member 40 .
  • the difference is that the light emitting diode assembly structure 13 arranges a groove 70 above the light emitting chip 20 , and the groove 70 penetrates the top and bottom surfaces 51 , 52 of the reflecting member 50 .
  • the groove 70 penetrates from the top surface 51 of the reflecting member 50 to the bottom surface 51 of the reflecting member 50 .
  • the groove 70 is applicable to the reflecting member 50 according to the sixth exemplary embodiment in the above modes or a combination thereof.
  • the groove 70 can be a cross-shaped groove or a circular groove. The features of the trench 70 are not described here.
  • the reflecting member 50 is applicable to the reflecting member 50 according to the first exemplary embodiment in the above modes or a combination thereof.
  • the reflecting surface 501 may be a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.
  • the reflecting surface 501 may be symmetrical or asymmetrical under all rotations about its center.
  • the light emitting diode assembly structure of the present disclosure defines the combined structure of the light emitting chip and the light guiding member, to improve the light irradiating efficiency and enlarge the irradiation range.
  • the light guiding member surrounds the side of the color converting layer and the light emitting chip.
  • the light emitted by the light emitting chip passes through the color converting layer and the light guiding member, and the light guiding member guides the light to irradiate towards the reflecting surface.
  • the light onto the reflecting surface is reflected towards the light guiding member.
  • the light emitted by the light emitting chip generates a first reflection, and the light reflected by the reflecting surface irradiates towards the exterior of the light emitting chip.
  • the light when the light passes through the light guiding member, the light may be transmitted a farther distance according to a material property of the light guiding member. Thus, a reflected angle range of the light reflected by the reflecting member can be enlarged.
  • the light emitting chip is arranged on the reflecting surface of the substrate. The light reflected by the reflecting surface of the reflecting member may irradiate towards the reflecting surface of the substrate. The light emitted by the light emitting chip is subjected to a second reflection, so that the illuminating range of such light is wider than the range directly emitted by a light emitting chip.
  • the present disclosure also changes the structure of the reflecting member to change the light guiding path and the light pattern.
  • the reflecting member and the light guiding member surrounds the light emitting chip. More light emitted by the light emitting chip irradiates towards the reflecting surface of reflecting member by the light guiding member. The light emitted by the light emitting chip irradiating the reflecting surface of reflecting member is reflected towards the exterior of the package.
  • the groove penetrates the first top and bottom surfaces of the reflecting member or penetrates the first top and bottom surfaces of the reflecting member and the second top and bottom surfaces of the light guiding member respectively.
  • the groove is arranged over the light emitting chip.

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CN110993774A (zh) 2020-04-10
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TWI626771B (zh) 2018-06-11
CN110993774B (zh) 2022-03-29

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