US20170149210A1 - Method for preparing organic polymer thin film laser - Google Patents
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- US20170149210A1 US20170149210A1 US15/109,650 US201515109650A US2017149210A1 US 20170149210 A1 US20170149210 A1 US 20170149210A1 US 201515109650 A US201515109650 A US 201515109650A US 2017149210 A1 US2017149210 A1 US 2017149210A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
- H01S3/0635—Thin film lasers in which light propagates in the plane of the thin film provided with a periodic structure, e.g. using distributed feed-back, grating couplers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/168—Solid materials using an organic dye dispersed in a solid matrix
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0211—Substrates made of ternary or quaternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/17—Solid materials amorphous, e.g. glass
- H01S3/178—Solid materials amorphous, e.g. glass plastic
Definitions
- the present disclosure relates to the field of photoelectric technology, and more particularly to a preparation method of a polymer film laser .
- the DFB laser includes a periodic structure acting as a feedback cavity.
- the DFB laser has merits of high reflectivity, long gain length, strong wavelength selectivity, high reliability and low thresholds.
- Varieties of polymer lasers have been fabricated using simple techniques, such as flexible conjugated polymer lasers, hybrid polymer lasers, all-solid-state polymer lasers, circular grating polymer lasers, and photonic bandgap polymer lasers.
- simple techniques such as flexible conjugated polymer lasers, hybrid polymer lasers, all-solid-state polymer lasers, circular grating polymer lasers, and photonic bandgap polymer lasers.
- practical applications demand miniaturization and lightweight designs of polymer lasers.
- the polymer lasers without a substrate can be conveniently obtained on a large scale and at low cost, and can be easily transplanted.
- the preparation of polymer laser includes a thin polymer film with a grating structure.
- This disclosure is based on preparation of the polymer film laser, and the preparation process is on the following steps:
- the polymer solution is spin-coated on a substrate with or without a grating structure, and a homogeneous polymer thin film with a thickness of 50-500 nm is formed.
- the spinning speed is 500-4000 rpm (revolutions per minute), and the spinning time is within 30-60 s.
- an interference pattern of ultraviolet laser is used to interact with the thin polymer film, and one-dimensional or two-dimensional grating structures may be formed.
- the step above should be omitted.
- the candidates of the polymers can be poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(1,4-benzo- ⁇ 2,1′,3 ⁇ -thiadiazole)](F8BT) or poly[(9,9′-dioctylfluorene-co-bis-N,N′-(4-butylphenyl)-bis-N, N′-phenyl-1,4-phenylenediamine] (PFB).
- the organic solvents mentioned above can be one of xylene, toluene, chlorobenzene, dichlorobenzene, benzene, chloroform, hexane, pentane, or octane.
- the substrate can be indium-tin-oxides (ITO) glass, fluorine doped tin oxide (FTO) glass, aluminum doped zinc oxide (AZO) glass, water soluble film of polyvinyl alcohol (PVA).
- the ultraviolet laser used in interference lithography is a pulsed laser with a wavelength of less than 400 nm.
- the polymer is employed as gain medium and the PR grating provides feedback.
- the polymer film laser absorbs the pump energy and emits photoluminescence, which is refracted by the grating, to obtain laser outputs. Then, the DFB lasing is obtained.
- the polymer film laser is lighter, thinner and more flexible, appropriating for exploration and application of micro devices.
- emission of the polymer film laser shows a good monochromaticity with a narrower full width at half maximum (FWHM).
- the output characteristics of polymer film laser can be adjusted by changing a grating parameter or the gain materials.
- FIG. 1 is an optical path for preparation of PR gratings in accordance with implementations of the present disclosure.
- FIG. 2 is a schematic diagram of a polymer film laser on ITO glass in accordance with implementations of the present disclosure.
- FIG. 3 is a schematic diagram of a polymer film laser in accordance with implementations of the present disclosure.
- FIG. 4 is a schematic diagram of a polymer film laser on a PET plate in accordance with implementations of the present disclosure.
- FIG. 5 shows measured spectra of a polymer film laser in accordance with implementations of the present disclosure.
- 1 . 1 represents Incident light
- 1 . 2 represents Beam splitter
- 1 . 3 represents Reflection mirror
- 1 . 4 represents Sample
- 2 . 1 represents Glass substrate
- 2 . 2 represents ITO film
- 2 . 3 represents PR gratings
- 2 . 4 represents Polymer
- 3 . 1 represents PET plate
- 3 . 2 represents Polymer film laser
- 3 . 3 represents Circular hole.
- a polymer film laser is a thin polymer film device with a grating structure.
- the polymer works as gain medium and the grating provides feedback.
- polymer molecules in the polymer film laser absorb the pumping energy, and emit photoluminescence.
- the photoluminescence is refracted by the gratings. Then the DFB laser is achieved.
- the example is the technical scheme, but not limited to the example.
- ITO glass is a substrate, and the polymer is F8BT.
- the preparation is based on the following steps:
- the photoresist (PR, Allresist AR-P-3170) solution is spin-coated on an ITO-coated glass substrate (15 mm ⁇ 15 mm ⁇ 1 mm), with a speed of 3000 rpm for 30 seconds.
- the ITO substrate is heated on a hot plate at 100° C. for 1 minute to obtain a PR film with 120 nm thickness. Then the PR gratings is produced by interference lithography.
- the pulse laser ( 1 . 1 ) is split into two beams by a beam splitter ( 1 . 2 ). The two beams are reflected by the total reflection mirror ( 1 . 3 ) to focus on the sample ( 1 . 4 ).
- a He-Cd Laser is employed as the pulse laser, with 325 nm wavelength and 10 mW total power. After exposing 10 s and developing 6 s, the grating ( 2 . 3 ) of a period of 355 nm is obtained.
- the ITO glass covered with PR gratings and thin polymer film is immersed in a hydrochloric acid with a mass concentration of 20% for 20 min.
- the ITO layer ( 2 . 2 ) on the glass substrate is dissolved in the hydrochloric acid, and a thin film including of PR grating ( 2 . 3 ) and F8BT film peels off the glass substrate ( 2 . 1 ).
- the film named as the polymer film fiber ( 3 . 2 ), floats on the surface of the hydrochloric acid solution.
- a Polyethylene terephthalate (PET) plate ( 3 . 1 ) with a circular hole ( 3 . 3 ) of 20 mm diameter and thickness of 0.4 mm is employed as a frame for the free-standing film device ( 3 . 2 ).
- the film is picked up by the PET frame ( 3 . 1 ), and covers the circular hole ( 3 . 3 ).
- the polymer film laser is excited by a femtosecond pump beam with a wavelength of 400 nm, and a repetition frequency of 1 kHz and a pulse length of 200 fs.
- the emission wavelength is 566 nm for the polymer film laser ( 3 . 2 ).
- the disclosure describes the preparation method for a polymer film laser.
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- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Dispersion Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Lasers (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
- This application is a national stage application of International application number PCT/CN2015/082963, filed Jun. 30, 2015, titled “Fabrication of free-standing membrane polymer laser,” which claims the priority benefit of Chinese Patent Application No. 201510316248.3, filed on Jun. 10, 2015, which is hereby incorporated by reference in its entirety.
- The present disclosure relates to the field of photoelectric technology, and more particularly to a preparation method of a polymer film laser .
- In 1972, H. Kogelnik and C. Shank in Bell laboratory provided the principle and explored properties of distributed feedback laser (DFB) based on the coupled wave theory of electromagnetic field. In contrast to a Fabry-Perot laser with feedback mirrors, the DFB laser includes a periodic structure acting as a feedback cavity. The DFB laser has merits of high reflectivity, long gain length, strong wavelength selectivity, high reliability and low thresholds.
- In the past decades, great developments have been achieved in the field of polymer lasers. In 1992, D. Moses et al. reported laser emission from xylene solutions of MEH-PPV with a high fluorescence-quantum yield efficiency comparable with Rhodamine 6G. In 1996, R. Friend et al. in Cavendish Lab of UK realized the emission of polymer microcavities under optical pumping conditions. In 1998, A. Heeger found that the thin film of BuEH-PPV can work as a polymer lighting emitting device with high quantum efficiency, high gain coefficient and low lasing threshold. Varieties of polymer lasers have been fabricated using simple techniques, such as flexible conjugated polymer lasers, hybrid polymer lasers, all-solid-state polymer lasers, circular grating polymer lasers, and photonic bandgap polymer lasers. However, practical applications demand miniaturization and lightweight designs of polymer lasers.
- In order to realize lighter, thinner, more flexible polymer lasers, a lift-off technique is developed to achieve flexible devices. The polymer lasers without a substrate can be conveniently obtained on a large scale and at low cost, and can be easily transplanted. The preparation of polymer laser includes a thin polymer film with a grating structure.
- This disclosure is based on preparation of the polymer film laser, and the preparation process is on the following steps:
- (S1) The polymer material is dissolved in an organic solvent with a concentration of 10-60 mg/ml.
- (S2) The polymer solution is spin-coated on a substrate with or without a grating structure, and a homogeneous polymer thin film with a thickness of 50-500 nm is formed. The spinning speed is 500-4000 rpm (revolutions per minute), and the spinning time is within 30-60 s.
- (S3) For the substrate without grating structure, an interference pattern of ultraviolet laser is used to interact with the thin polymer film, and one-dimensional or two-dimensional grating structures may be formed. For the substrate with the grating structure, the step above should be omitted.
- (S4) The substrate with a thin polymer film is immersed in hydrochloric acid solution or water. Then the polymer film with grating structure peels off the substrate, which is named as the polymer film laser.
- The candidates of the polymers can be poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-co-(1,4-benzo-{2,1′,3}-thiadiazole)](F8BT) or poly[(9,9′-dioctylfluorene-co-bis-N,N′-(4-butylphenyl)-bis-N, N′-phenyl-1,4-phenylenediamine] (PFB). The organic solvents mentioned above can be one of xylene, toluene, chlorobenzene, dichlorobenzene, benzene, chloroform, hexane, pentane, or octane. The substrate can be indium-tin-oxides (ITO) glass, fluorine doped tin oxide (FTO) glass, aluminum doped zinc oxide (AZO) glass, water soluble film of polyvinyl alcohol (PVA). The ultraviolet laser used in interference lithography is a pulsed laser with a wavelength of less than 400 nm.
- The polymer is employed as gain medium and the PR grating provides feedback. Under optical pumping, the polymer film laser absorbs the pump energy and emits photoluminescence, which is refracted by the grating, to obtain laser outputs. Then, the DFB lasing is obtained.
- Comparison with the traditional polymer lasers, this disclosure has obvious merits as following:
- Firstly, the polymer film laser is lighter, thinner and more flexible, appropriating for exploration and application of micro devices.
- Secondly, emission of the polymer film laser shows a good monochromaticity with a narrower full width at half maximum (FWHM).
- Lastly, the output characteristics of polymer film laser can be adjusted by changing a grating parameter or the gain materials.
-
FIG. 1 is an optical path for preparation of PR gratings in accordance with implementations of the present disclosure. -
FIG. 2 is a schematic diagram of a polymer film laser on ITO glass in accordance with implementations of the present disclosure. -
FIG. 3 is a schematic diagram of a polymer film laser in accordance with implementations of the present disclosure. -
FIG. 4 is a schematic diagram of a polymer film laser on a PET plate in accordance with implementations of the present disclosure. -
FIG. 5 shows measured spectra of a polymer film laser in accordance with implementations of the present disclosure. - As illustrated in the figures above, 1.1 represents Incident light, 1.2 represents Beam splitter, 1.3 represents Reflection mirror, 1.4 represents Sample, 2.1 represents Glass substrate, 2.2 represents ITO film, 2.3 represents PR gratings, 2.4 represents Polymer, 3.1 represents PET plate, 3.2 represents Polymer film laser, and 3.3 represents Circular hole.
- A polymer film laser is a thin polymer film device with a grating structure. The polymer works as gain medium and the grating provides feedback. Under optical pumping, polymer molecules in the polymer film laser absorb the pumping energy, and emit photoluminescence. The photoluminescence is refracted by the gratings. Then the DFB laser is achieved.
- Combined with the companying figures, the example is the technical scheme, but not limited to the example. In preparation of the polymer film laser, ITO glass is a substrate, and the polymer is F8BT. The preparation is based on the following steps:
- (S1) The photoresist (PR, Allresist AR-P-3170) solution is spin-coated on an ITO-coated glass substrate (15 mm×15 mm×1 mm), with a speed of 3000 rpm for 30 seconds.
- (S2) The ITO substrate is heated on a hot plate at 100° C. for 1 minute to obtain a PR film with 120 nm thickness. Then the PR gratings is produced by interference lithography. The pulse laser (1.1) is split into two beams by a beam splitter (1.2). The two beams are reflected by the total reflection mirror (1.3) to focus on the sample (1.4). A He-Cd Laser is employed as the pulse laser, with 325 nm wavelength and 10 mW total power. After exposing 10 s and developing 6 s, the grating (2.3) of a period of 355 nm is obtained.
- (S3) The F8BT solution in xylene with a concentration of 25 mg/ml is spin-coated on the PR grating (2.3) with a speed of 1000 rpm for 30 s. A thin film of F8BT with a thickness of about 170 nm is obtained on the PR grating.
- (S4) The ITO glass covered with PR gratings and thin polymer film is immersed in a hydrochloric acid with a mass concentration of 20% for 20 min. The ITO layer (2.2) on the glass substrate is dissolved in the hydrochloric acid, and a thin film including of PR grating (2.3) and F8BT film peels off the glass substrate (2.1). Finally, the film, named as the polymer film fiber (3.2), floats on the surface of the hydrochloric acid solution.
- (S5) A Polyethylene terephthalate (PET) plate (3.1) with a circular hole (3.3) of 20 mm diameter and thickness of 0.4 mm is employed as a frame for the free-standing film device (3.2). The film is picked up by the PET frame (3.1), and covers the circular hole (3.3).
- (S6) The polymer film laser is excited by a femtosecond pump beam with a wavelength of 400 nm, and a repetition frequency of 1 kHz and a pulse length of 200 fs. The emission wavelength is 566 nm for the polymer film laser (3.2).
- The disclosure describes the preparation method for a polymer film laser.
Claims (6)
Applications Claiming Priority (4)
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CN201510316248.3A CN104882780B (en) | 2015-06-10 | 2015-06-10 | A kind of preparation method of film-type organic polymer laser |
CN201510316248 | 2015-06-10 | ||
CN201510316248.3 | 2015-06-10 | ||
PCT/CN2015/082963 WO2016197423A1 (en) | 2015-06-10 | 2015-06-30 | Manufacturing method of thin film laser of organic polymer |
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US20170149210A1 true US20170149210A1 (en) | 2017-05-25 |
US9667035B1 US9667035B1 (en) | 2017-05-30 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10879670B2 (en) * | 2017-11-15 | 2020-12-29 | Soochow University | Continuous-wave pumped polymer laser and preparation method thereof |
CN113031364A (en) * | 2021-02-01 | 2021-06-25 | 山东师范大学 | Application of Y6 in optical limiting |
US20210203122A1 (en) * | 2019-12-29 | 2021-07-01 | Hong Kong Baptist University | Tunable laser materials comprising solid-state blended polymers |
US11509118B2 (en) * | 2017-07-10 | 2022-11-22 | University Court Of The University Of St Andrews | Laser device |
Families Citing this family (5)
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CN110429470B (en) * | 2019-05-29 | 2021-07-30 | 北京工业大学 | Cavity coupling DFB laser with adjustable emergent laser polarization state |
CN110137799B (en) * | 2019-05-29 | 2021-12-31 | 北京工业大学 | Composite cavity laser with adjustable laser emitting direction |
CN111555115B (en) * | 2020-05-19 | 2021-05-07 | 北京工业大学 | VCSEL array chip for emitting coherent light |
CN111682398B (en) * | 2020-06-11 | 2021-10-01 | 南京邮电大学 | Wavelength-tunable organic thin-film laser device based on photoresponse and application thereof |
CN111900620A (en) * | 2020-07-22 | 2020-11-06 | 南京邮电大学 | Wavelength-adjustable elastic organic laser and preparation method thereof |
Citations (2)
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US20060073607A1 (en) * | 2003-12-05 | 2006-04-06 | Massachusetts Institute Of Technology | Organic materials able to detect analytes |
JP2009053271A (en) * | 2007-08-23 | 2009-03-12 | Sumitomo Electric Ind Ltd | Method for forming mold, method for forming diffraction grating and method for manufacturing distributed feedback type semiconductor laser |
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JP2010015874A (en) * | 2008-07-04 | 2010-01-21 | Kyoto Institute Of Technology | Organic optical device, method of manufacturing the same, and method of manufacturing amplified or narrowed light |
CN102651537B (en) * | 2011-02-23 | 2014-07-30 | 北京工业大学 | Manufacturing method for organic semiconductor laser based on active waveguide grating structure |
CN102651534A (en) * | 2011-02-23 | 2012-08-29 | 北京工业大学 | Distributed feedback type organic semiconductor laser preparation method based on laser interferometer lithography |
CN102649196B (en) * | 2011-02-23 | 2015-05-20 | 北京工业大学 | Method for directly writing organic semiconductor laser by ultraviolet laser interferometry etching |
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- 2015-06-10 CN CN201510316248.3A patent/CN104882780B/en active Active
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20060073607A1 (en) * | 2003-12-05 | 2006-04-06 | Massachusetts Institute Of Technology | Organic materials able to detect analytes |
JP2009053271A (en) * | 2007-08-23 | 2009-03-12 | Sumitomo Electric Ind Ltd | Method for forming mold, method for forming diffraction grating and method for manufacturing distributed feedback type semiconductor laser |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11509118B2 (en) * | 2017-07-10 | 2022-11-22 | University Court Of The University Of St Andrews | Laser device |
US10879670B2 (en) * | 2017-11-15 | 2020-12-29 | Soochow University | Continuous-wave pumped polymer laser and preparation method thereof |
US20210203122A1 (en) * | 2019-12-29 | 2021-07-01 | Hong Kong Baptist University | Tunable laser materials comprising solid-state blended polymers |
US11837842B2 (en) * | 2019-12-29 | 2023-12-05 | Hong Kong Baptist University | Tunable laser materials comprising solid-state blended polymers |
CN113031364A (en) * | 2021-02-01 | 2021-06-25 | 山东师范大学 | Application of Y6 in optical limiting |
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US9667035B1 (en) | 2017-05-30 |
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CN104882780B (en) | 2017-10-13 |
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