US20170121815A1 - Apparatus for distributing gas and apparatus for processing substrate including the same - Google Patents
Apparatus for distributing gas and apparatus for processing substrate including the same Download PDFInfo
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- US20170121815A1 US20170121815A1 US15/301,717 US201515301717A US2017121815A1 US 20170121815 A1 US20170121815 A1 US 20170121815A1 US 201515301717 A US201515301717 A US 201515301717A US 2017121815 A1 US2017121815 A1 US 2017121815A1
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- Prior art keywords
- gas
- passages
- processing
- buffering
- injection module
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- 238000012545 processing Methods 0.000 title claims abstract description 201
- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 238000002347 injection Methods 0.000 claims abstract description 167
- 239000007924 injection Substances 0.000 claims abstract description 167
- 238000009826 distribution Methods 0.000 claims abstract description 102
- 239000000872 buffer Substances 0.000 claims abstract description 4
- 230000003139 buffering effect Effects 0.000 claims description 163
- 238000004891 communication Methods 0.000 claims description 23
- 238000007789 sealing Methods 0.000 claims description 14
- 230000001965 increasing effect Effects 0.000 claims description 8
- 238000003780 insertion Methods 0.000 claims description 5
- 230000037431 insertion Effects 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 596
- 101100015566 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GPG1 gene Proteins 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Abstract
Disclosed is an apparatus for distributing gas which is capable of uniformly injecting processing gas into a plurality of gas passages being communicated with a plurality of gas distribution holes, and an apparatus for processing substrate including the same, wherein the apparatus for distributing gas may include a body including a plurality of gas passages connected with a plurality of gas distribution holes for distributing processing gas; and at least one gas injection module connected with at least one lateral surface of the body and respectively communicated with the plurality of gas passages, wherein the gas injection module firstly buffers the processing gas supplied from the external, secondly buffers the firstly buffered processing gas, and injects the buffered processing gas into the plurality of gas passages.
Description
- The present invention relates to an apparatus for distributing gas and an apparatus for processing substrate including the same.
- Generally, in order to manufacture a solar cell, a semiconductor device and a flat panel display device, it is necessary to form a predetermined thin film layer on a surface of a substrate. Thus, a semiconductor manufacturing process may be carried out, for example, a thin film deposition process of depositing a thin film of a predetermined material on the substrate, a photo process of selectively exposing the thin film by the use of photosensitive material, and an etching process of forming a pattern by selectively removing an exposed portion of the thin film.
- The semiconductor manufacturing process is performed inside a substrate processing apparatus designed to be suitable for optimal circumstances. Recently, a substrate processing apparatus using plasma is generally used to carry out a deposition or etching process.
- This semiconductor manufacturing process using plasma may be a PECVD (Plasma Enhanced Chemical Vapor Deposition) apparatus, wherein the PECVD apparatus may use a gas distribution apparatus for introducing gas into the inside of a chamber.
- The gas distribution apparatus is provided to distribute various processing gases onto the surface of the substrate through a plurality of gas distribution holes formed in a plate-shaped body. Generally, the gas distribution apparatus may be formed of aluminum in consideration of workability and reactivity on the processing gas.
- As shown in
FIG. 1 , a related art gas distribution apparatus may include a plate-shaped body 10, a plurality ofgas passages 20 which are provided by forming a plurality of holes along a predetermined direction of thebody 10 at fixed intervals inside thebody 10 by a machinery working using a drill and sealing both ends of each hole bywelding 22, and a plurality ofgas distribution holes 30 which are respectively connected with the plurality ofgas passages 20 and are formed vertically to a lower surface of thebody 10. In this related art gas distribution apparatus, processing gas, which is injected into the center of each of the plurality ofgas passages 20 through agas supply pipe 40, is downwardly distributed through the plurality ofgas distribution holes 30. - In case of the related art gas distribution apparatus, the processing gas is injected into each of the plurality of
gas passages 20, whereby it is difficult to realize uniformity on injection of the processing gas into the plurality ofgas passages 20. Also, both ends of each of the plurality ofgas passages 20 are permanently sealed by welding, whereby it is difficult to clean thegas passages 20 and thegas distribution holes 30. - Accordingly, the present invention is directed to an apparatus for distributing gas and an apparatus for processing substrate including the same that substantially obviates one or more problems due to limitations and disadvantages of the related art.
- An aspect of the present invention is to provide an apparatus for distributing gas and an apparatus for processing substrate including the same, which is capable of uniformly injecting processing gas into a plurality of gas passages being communicated with a plurality of gas distribution holes.
- Another aspect of the present invention is to provide an apparatus for distributing gas and an apparatus for processing substrate including the same, which facilitates to clean a plurality of gas distribution holes and a plurality of gas passages.
- Additional advantages and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
- To achieve these and other advantages and in accordance with the purpose of the invention, as embodied and broadly described herein, there is provided an apparatus for distributing gas that may include a body including a plurality of gas passages connected with a plurality of gas distribution holes for distributing processing gas; and at least one gas injection module connected with at least one lateral surface of the body and respectively communicated with the plurality of gas passages, wherein the gas injection module includes a first gas buffering space for firstly buffering the processing gas supplied from the external; and a second gas buffering space for secondly buffering the processing gas firstly buffered in the first gas buffering space, and injecting the secondly buffered processing gas into the plurality of gas passages.
- In another aspect of the present invention, there is provided an apparatus for processing substrate that may include a processing chamber; a chamber lid for covering an upper side of the processing chamber; a substrate supporting means for supporting a substrate, the substrate supporting means provided inside the processing chamber; and a gas distribution means confronting the substrate supporting means, the gas distribution means connected with a lower surface of the chamber lid, wherein the gas distribution means includes the above apparatus for distributing gas.
- According to the present invention, the processing gas is uniformly injected into the plurality of gas passages so that it is possible to easily clean the plurality of gas passages and the plurality of gas distribution holes. Also, the processing gas is uniformly distributed onto the surface of the substrate, which enables the uniform substrate processing.
-
FIG. 1 is a cross sectional view illustrating a related art gas distribution apparatus; -
FIG. 2 is a rear perspective view illustrating an apparatus for distributing gas according to the first embodiment of the present invention; -
FIG. 3 is a vertical cross sectional view along I-I′ ofFIG. 2 ; -
FIG. 4 is a horizontal cross sectional view along II-II′ ofFIG. 2 ; -
FIG. 5 is a cross sectional view for explaining a plurality of communication holes shown inFIG. 4 ; -
FIG. 6 illustrates a flow of processing gas in the apparatus for distributing gas according to the first embodiment of the present invention; -
FIG. 7 illustrates an apparatus for distributing gas according to the second embodiment of the present invention; -
FIG. 8 is a cross sectional view for explaining a gas injection hole shown inFIG. 7 ; -
FIG. 9 illustrates a modified example of the apparatus for distributing gas according to the second embodiment of the present invention; -
FIG. 10 illustrates an apparatus for distributing gas according to the third embodiment of the present invention; -
FIG. 11 illustrates an apparatus for distributing gas according to the fourth embodiment of the present invention; -
FIG. 12 illustrates a modified example of the apparatus for distributing gas according to the fourth embodiment of the present invention; -
FIG. 13 is a rear perspective view illustrating an apparatus for distributing gas according to the fifth embodiment of the present invention; -
FIG. 14 is a vertical cross sectional view along III-III′ ofFIG. 13 ; -
FIG. 15 is a horizontal cross sectional view along IV-IV′ ofFIG. 13 ; and -
FIG. 16 is a cross sectional view illustrating an apparatus for processing substrate according to an embodiment of the present invention. - On explanation about the embodiments of the present invention, the following details about the terms should be understood.
- The term of a singular expression should be understood to include a multiple expression as well as the singular expression if there is no specific definition in the context.
- If using the term such as “the first” or “the second”, it is to separate any one element from other elements. Thus, a scope of claims is not limited by these terms. Also, it should be understood that the term such as “include” or “have” does not preclude existence or possibility of one or more features, numbers, steps, operations, elements, parts or their combinations. It should be understood that the term “at least one” includes all combinations related with any one item. For example, “at least one among a first element, a second element and a third element” may include all combinations of the two or more elements selected from the first, second and third elements as well as each element of the first, second and third elements. Also, if it is mentioned that a first element is positioned “on or above” a second structure, it should be understood that the first and second elements may be brought into contact with each other, or a third element may be interposed between the first and second elements.
- Hereinafter, an apparatus for distributing gas (hereinafter, referred to as ‘gas distribution apparatus’) according to the present invention and an apparatus for processing substrate including the same will be described with reference to the accompanying drawings.
-
FIG. 2 is a rear perspective view illustrating a gas distribution apparatus according to the first embodiment of the present invention,FIG. 3 is a vertical cross sectional view along I-I′ ofFIG. 2 , andFIG. 4 is a horizontal cross sectional view along II-II′ ofFIG. 2 . - Referring to
FIGS. 2 to 4 , thegas distribution apparatus 100 according to the first embodiment of the present invention may include abody 110, a firstgas injection module 120 a, and a secondgas injection module 120 b. - The
body 110 may be formed of a plate-shaped metal material with a predetermined thickness, for example, aluminum or aluminum alloy. Thebody 110 is detachably provided in a lower surface of a chamber lid for covering an upper side of a processing chamber (not shown), whereby thebody 110 confronts a substrate supporting means (not shown) provided on a bottom surface of the processing chamber. - The
body 110 is provided with a plurality ofgas passages 111 and a plurality ofgas distribution holes 113. - The plurality of
gas passages 111 are provided at fixed intervals in parallel to a horizontal direction (X) or vertical direction (Y) inside thebody 110. For example, the plurality ofgas passages 111 may be provided by forming a plurality of holes penetrating thebody 110 from its one surface to the other surface through a gun drilling working. Herein, processing gas is injected into the plurality ofgas passages 111 from the first and secondgas injection modules - The plurality of
gas distribution holes 113 are vertically formed on a rear surface of thebody 110 at fixed intervals, and are communicated with the plurality ofgas passages 111, respectively. The plurality ofgas distribution holes 113 downwardly distribute the processing gas, which is injected into the plurality ofgas passages 111, at a constant pressure. The plurality ofgas distribution holes 113 may include at least one distribution nozzle to be optimized for at least one among a distribution area of the processing gas, a distribution angle of the processing gas, and a distribution amount of the processing gas. - Each of the plurality of
gas distribution holes 113 according to one embodiment of the present invention may be formed in a cylinder shape whose diameter is smaller than that of thegas passage 111. - Although not shown, each of the plurality of
gas distribution holes 113 according to another embodiment of the present invention may be formed of a funnel shape with a first distribution part having a first diameter in communication with thegas passage 111, and a second distribution part in communication with the first distribution part, wherein a diameter of the second distribution part is gradually increased from the first distribution part having the first diameter to the rear surface of thebody 110. - Although not shown, each of the plurality of gas distribution holes 113 according to another embodiment of the present invention may be formed of a predetermined shape with a first distribution part having a first diameter in communication with the
gas passage 111, a second distribution part having a second diameter being smaller than the first diameter in communication with the first distribution part, and a third distribution part in communication with the second distribution part, wherein a diameter of the third distribution part is gradually increased from the second distribution part having the second diameter to the rear surface of thebody 110. - The first
gas injection module 120 a is connected with one lateral surface of thebody 110, wherein the firstgas injection module 120 a injects the processing gas supplied through at least one of firstgas supply pipe 130 a to each of the plurality ofgas passages 111. The firstgas injection module 120 a according to one embodiment of the present invention may include a first gas buffering space (GB S1) for firstly buffering the processing gas supplied from the firstgas supply pipe 130 a, and a second gas buffering space (GBS2) for secondly buffering the processing gas supplied from the first gas buffering space (GBS1) and injecting the buffered processing gas into one side of each of the plurality ofgas passages 111. For example, the firstgas injection module 120 a may include a firstgas buffering member 121 having the first gas buffering space (GBS1), and a secondgas buffering member 123 having the second gas buffering space (GBS2). - The first
gas buffering member 121 includes the first gas buffering space (GBS1) for firstly buffering the processing gas supplied through the firstgas supply pipe 130 a, and the firstgas buffering member 121 is connected with one lateral surface of thebody 110 so as to cover one side of each of the plurality ofgas passages 111. For example, the firstgas buffering member 121 may be formed in a case shape whose inner lateral surface facing toward the plurality ofgas passages 111 is opened so as to include the first gas buffering space (GBS1) surrounded by an outer lateral surface and each lateral sidewall being vertical to the outer lateral surface. Accordingly, the firstgas buffering member 121 firstly buffers or diffuses the processing gas supplied through the firstgas supply pipe 130 a in the first gas buffering space (GBS1). - A
gas supply hole 120 h being in communication with the firstgas supply pipe 130 a is formed in a lateral surface of the firstgas buffering member 121, for example, an upper lateral surface of the firstgas buffering member 121. In this case, a sealing member may be provided between the upper lateral surface of the firstgas buffering member 121 and the firstgas supply pipe 130 a. In addition, a connection part between the firstgas supply pipe 130 a and thegas supply hole 120 h may be sealed by a sealingjacket 131. Herein, the firstgas buffering member 121 may be provided with the two or more firstgas supply pipes 130 a. In this case, the two or more firstgas supply pipes 130 a may be individually connected with a gas supply means (not shown), or may be diverged from a main supply pipe connected with the gas supply means (not shown). - A sealing
member 125 is provided between each sidewall of the firstgas buffering member 121 and one lateral surface of thebody 110. The sealingmember 125 may be an O-ring or pad, wherein the O-ring or pad may be formed of a material which is not damaged by the processing gas. - The second
gas buffering member 123 includes the second gas buffering space (GBS2) for secondly buffering the processing gas which is firstly buffered in the first gas buffering space (GBS1) of the firstgas buffering member 121, and injecting the secondly-buffered processing gas into the plurality ofgas passages 111. Also, the secondgas buffering member 123 is disposed inside the firstgas buffering member 121, and is connected with one lateral surface of thebody 110 so as to cover one side of each of the plurality ofgas passages 111. For example, the secondgas buffering member 123 may be formed in a case shape whose inner lateral surface facing toward the plurality ofgas passages 111 is opened so as to include the second gas buffering space (GBS2) surrounded by an outer lateral surface and each lateral sidewall. - According to one embodiment of the present invention, a size of the second gas buffering space (GBS2) may be the same as a size of the first gas buffering space (GBS1).
- According to another embodiment of the present invention, a size of the second gas buffering space (GBS) may be relatively smaller than a size of the first gas buffering space (GBS1) since the processing gas firstly buffered in the first gas buffering space (GBS1) is secondly buffered in the second gas buffering space (GBS2). In this case, it is possible to decrease a width of the first
gas injection module 120 a. - A plurality of
communication holes 123 h are provided at fixed intervals in the outer lateral surface of the secondgas buffering member 123, that is, a confronting surface which confronts the outer lateral surface of the firstgas buffering member 121, and are communicated with the first gas buffering space (GBS1). Herein, the plurality ofcommunication holes 123 h form the passage of the processing gas, which is buffered and diffused in the first gas buffering space (GBS1), to the second gas buffering space (GBS2). - Through the plurality of
communication holes 123 h, the processing gas whose pressure is lowered by the first diffusion in the first gas buffering space (GBS1) is distributed at a constant pressure toward the second gas buffering space (GBS2), whereby the firstly-diffused processing gas is secondly diffused in the second gas buffering space (GBS2) with smoothness. - The plurality of
communication holes 123 h according to one embodiment of the present invention may be provided at fixed intervals in the outer lateral surface of the secondgas buffering member 123, wherein the plurality of the communication holes 123 h may have the same diameter (or size). - As shown in (a) of
FIG. 5 , in consideration of a flow distance of the processing gas, a diameter (D1, D2, D3) of each of the plurality ofcommunication holes 123 h according to another embodiment of the present invention may be gradually increased from the center of the secondgas buffering member 123 toward both ends of the secondgas buffering member 123 with respect to the outer lateral surface of the second gas buffering member 123 (or both ends of thebody 110 with respect to a longitudinal direction of one lateral surface of the body 110) . In this case, the processing gas supplied from the first gas buffering space (GBS1) to the second gas buffering space (GBS2) may be buffered or diffused more uniformly. - As shown in (b) of
FIG. 5 , in consideration of a flow distance of the processing gas, each of the plurality ofcommunication holes 123 h according to another embodiment of the present invention may have the same diameter, and an interval (S1, S2) between the center of each of the neighboring communication holes 123 h may be gradually decreased from the center of the secondgas buffering member 123 toward both ends of the secondgas buffering member 123 with respect to the outer lateral surface of the secondgas buffering member 123. In this case, the processing gas supplied from the first gas buffering space (GBS1) to the second gas buffering space (GBS2) may be buffered or diffused more uniformly. Additionally, although not shown, in consideration of a flow distance of the processing gas, the diameter (D1, D2, D3) of each of the plurality ofcommunication holes 123 h may be gradually increased from the center of the secondgas buffering member 123 toward both ends of the secondgas buffering member 123 with respect to the outer lateral surface of the secondgas buffering member 123, and the interval (51, S2) between the center of each of the neighboring communication holes 123 h may be gradually decreased from the center of the secondgas buffering member 123 toward both ends of the secondgas buffering member 123 with respect to the outer lateral surface of the secondgas buffering member 123. - Referring once again to
FIGS. 2 to 4 , the secondgas injection module 120 b is connected with the other lateral surface of thebody 110 in the opposite side of one lateral surface of thebody 110, whereby the processing gas supplied through at least one of secondgas supply pipe 130 b is injected into each of the plurality ofgas passages 111 by the secondgas injection module 120 b. The secondgas injection module 120 b according to one embodiment of the present invention may include a first gas buffering space (GBS1) for firstly buffering the processing gas supplied from the secondgas supply pipe 130 b, and a second gas buffering space (GBS2) for secondly buffering the processing gas supplied from the first gas buffering space (GBS1) and injecting the buffered processing gas into the plurality ofgas passages 111. For example, the firstgas injection module 120 a may include the firstgas buffering member 121 with the first gas buffering space (GBS1), and the secondgas buffering member 123 with the second gas buffering space (GBS2). Except that the processing gas supplied from the secondgas supply pipe 130 b is injected into the other side of each of the plurality ofgas passages 111, the secondgas injection module 120 b is identical in structure to the firstgas injection module 120 a, whereby the same reference numbers will be used throughout the drawings to refer to the same or like parts, and a detailed description for the same parts will be omitted. -
FIG. 6 illustrates a flow of the processing gas in the gas distribution apparatus according to the first embodiment of the present invention. - Referring to
FIG. 6 in connection withFIG. 4 , in case of the gas distribution apparatus according to the first embodiment of the present invention, the processing gas (PG) supplied through the first and secondgas supply pipes gas injection modules communication hole 123 h of the first and secondgas injection modules gas passages 111. Then, the processing gas injected into the plurality ofgas passages 111 is thirdly buffered and diffused in the plurality ofgas passages 111, and is then downwardly distributed through the plurality of gas distribution holes 113. - In the aforementioned description, the processing gas is buffered in each of the first and second
gas injection modules gas passages 111, to thereby realize the uniform injection of the processing gas into the plurality ofgas passages 111 with smoothness, but not limited to this structure. It is possible to omit the secondgas injection module 120 b. In this case, the other end of each of the plurality ofgas passages 111 is not permanently sealed by welding, but closed by the use of detachable sealing cap for a easy cleaning process. - In the gas distribution apparatus according to the first embodiment of the present invention, the
gas injection modules body 110 provided with the plurality ofgas passages 111 and the plurality of gas distribution holes 113, and the processing gas is injected into the plurality ofgas passages 111 being in communication with the plurality of gas distribution holes 113 through the first and second buffering processes in thegas injection modules gas passages 111, and to easily clean the plurality ofgas passages 111 and the plurality of gas distribution holes 113 through the detachment of thegas injection modules -
FIG. 7 illustrates a gas distribution apparatus according to the second embodiment of the present invention. Except that a gas injection member is additionally provided in each of first and second gas injection modules shown inFIG. 4 , the gas distribution apparatus according to the second embodiment of the present invention is identical in structure to the gas distribution apparatus according to the first embodiment of the present invention. Hereinafter, only the gas injection member will be described in detail. - First, a first
gas injection member 127 a of a firstgas injection module 120 a injects (or distributes) processing gas which is secondly buffered and diffused in a second gas buffering space (GBS2) into one side of each of a plurality ofgas passages 111 at a constant pressure. To this end, the firstgas injection member 127 a is formed in a plate shape with a constant thickness, and is then connected with one lateral surface of abody 111 for covering one side of each of the plurality ofgas passages 111. A plurality of gas injection holes 127 h are provided in the firstgas injection member 127 a, and the plurality of gas injection holes 127 h are respectively overlapped with the plurality ofgas passages 111 in one-to-one correspondence, whereby the processing gas secondly buffered in the second gas buffering space (GBS2) is injected at a constant pressure into one side of each of the plurality ofgas passages 111. - Each of the plurality of gas injection holes 127 h may has a diameter and/or a cross sectional shape for increasing a pressure of the processing gas injected into the plurality of
gas passages 111 in the second gas buffering space (GBS2). For example, a diameter in each of the plurality of gas injection holes 127 h may be relatively smaller than a diameter in each of the plurality ofgas passages 111. - Additionally, in consideration of a flow of the processing gas secondly buffered in the second gas buffering space (GBS2), a diameter (or size, D1 to D5) of each of the plurality of gas injection holes 127 h may be gradually increased from the center of the
body 110 toward both ends of thebody 110 with respect to a longitudinal direction of one lateral surface of thebody 110, whereby the processing gas may be uniformly injected into each of the plurality ofgas passages 111, as shown inFIG. 8 . - Preferably, a sealing member (not shown) is provided between the first
gas injection member 127 a and one lateral surface of thebody 110 except the periphery of one side of each of the plurality ofgas passages 111 and the periphery of the plurality of gas injection holes 127 h. - A second
gas injection member 127 b of a secondgas injection module 120 b injects (or distributes) the processing gas which is secondly buffered and diffused in the second gas buffering space (GBS2) into the other side of each of the plurality ofgas passages 111 at a constant pressure. To this end, the secondgas injection member 127 b is formed in a plate shape with a constant thickness, and is then connected with the other lateral surface of thebody 111 for covering the other side of each of the plurality ofgas passages 111. A plurality of gas injection holes 127 h are provided in the secondgas injection member 127 b, and the plurality of gas injection holes 127 h are respectively overlapped with the plurality ofgas passages 111 in one-to-one correspondence, whereby the processing gas secondly buffered in the second gas buffering space (GBS2) is injected at a constant pressure into the other side of each of the plurality ofgas passages 111. Each of the plurality of gas injection holes 127 h provided in the secondgas injection module 120 b is identical in structure to that of the firstgas injection module 120 a, whereby the same reference numbers will be used throughout the drawings to refer to the same or like parts, and a detailed description for the same parts will be omitted. - Preferably, a sealing member (not shown) is provided between the second
gas injection member 127 b and the other lateral surface of thebody 110 except the periphery of the other side of each of the plurality ofgas passages 111 and the periphery of the plurality of gas injection holes 127 h. - Meanwhile, as shown in
FIG. 9 , the aforementioned firstgas injection member 127 a may be inserted into and connected with afirst insertion groove 115 a which is provided at a predetermined depth in one lateral surface of thebody 110. In this case, the firstgas injection member 127 a is not protruding out of one lateral surface of thebody 110, preferably. In the same manner, the secondgas injection member 127 b may be inserted into and connected with asecond insertion groove 115 b which is provided at a predetermined depth in the other lateral surface of thebody 110. In this case, the secondgas injection member 127 b is not protruding out of the other lateral surface of thebody 110, preferably. Accordingly, the first and secondgas injection members body 110 and the other lateral surface of thebody 110, whereby it facilitates sealing between thebody 110 and each of first and secondgas buffering members - The
gas distribution apparatus 200 according to the second embodiment of the present invention provides the same effect as the first gas distribution apparatus according to the first embodiment of the present invention. Furthermore, thegas distribution apparatus 200 according to the second embodiment of the present invention increases the pressure of processing gas injected into each of the plurality ofgas passages 111 from the second gas buffering space (GBS2), and thus to uniformly inject the processing gas into each of the plurality ofgas passages 111. -
FIG. 10 illustrates a gas distribution apparatus according to the third embodiment of the present invention. Except a structure of a second gas buffering member in each of first and second gas injection modules shown inFIGS. 1 to 4 , the gas distribution apparatus according to the third embodiment of the present invention is identical in structure to the gas distribution apparatus according to the first embodiment of the present invention. Hereinafter, only the second gas buffering member will be described in detail. - First, a plurality of
gas passages 111 are formed in abody 110, and a plurality of gas passage groups (GPG1, GPG2) are formed by grouping the plurality ofgas passages 111, wherein each of the gas passage groups (GPG1, GPG2) includes the adjacent two ormore gas passages 111. For example, if thebody 110 includes the ten ofgas passages 111, it is possible to form the first and second gas passage groups (GPG1, GPG2), wherein each of the first and second gas passage groups (GPG1, GPG2) includes the adjacent fivegas passages 111. - A second
gas buffering member 123 in each of first and secondgas injection modules group buffering members - Each of the plurality of
group buffering members communication hole 123 h and a second gas buffering space (GBS2) for secondly buffering the processing gas firstly buffered in the first gas buffering space (GBS1), and injecting the buffered processing gas into the correspondinggas passages 111 of the corresponding gas passage group (GPG1, GPG2) in common Each of thegroup buffering members gas buffering member 123 shown inFIGS. 1 to 4 , whereby the same reference numbers will be used throughout the drawings to refer to the same or like parts, and a detailed description for the same parts will be omitted. - The
gas distribution apparatus 300 according to the third embodiment of the present invention provides the same effect as the first gas distribution apparatus according to the first embodiment of the present invention. In case of thegas distribution apparatus 300 according to the third embodiment of the present invention, the second gas buffering space (GBS2) is divided into the plurality of parts, and the processing gas is injected into the plurality ofgas passages 111 through each divided part, whereby it is possible to uniformly inject the processing gas into the plurality ofgas passages 111. Thegas distribution apparatus 300 according to the third embodiment of the present invention may further include a gas injection member (not shown) which is disposed in the inside of each of thegroup buffering members body 110 and the other lateral surface of thebody 110 corresponding to each of the plurality of gas passage groups (GPG1, GPG2). The gas injection member is identical in structure to thegas injection members FIGS. 8 to 10 , whereby a detailed description for the structure of the gas injection member will be omitted. -
FIG. 11 illustrates a gas distribution apparatus according to the fourth embodiment of the present invention, which shows a change of processing gas supplied to a plurality of gas passages shown inFIGS. 1 to 4 . Hereinafter, only the plurality of gas passages and the processing gas will be described in detail. - First, a plurality of
gas passages 111 are formed in abody 110. Among the plurality ofgas passages 111 formed in thebody 110, one side of each of some gas passages 111 o, that is, the odd-numbered gas passage 111 o is communicated with a second gas buffering space (GBS2) of a firstgas injection module 120 a, and the other side of the odd-numbered gas passage 111 o is closed by adetachable sealing cap 140. Herein, first processing gas (PG1) is injected into the odd-numbered gas passage 111 o through first and second buffering of the firstgas injection module 120 a. - Among the plurality of
gas passages 111 formed in thebody 110, one side of each of the remaininggas passages 111 e, that is, the even-numberedgas passage 111 e is closed by adetachable sealing cap 140, and the other side of each of the even-numberedgas passages 111 e is communicated with a second gas buffering space (GBS2) of a secondgas injection module 120 b. Herein, second processing gas (PG2), which is the same as or different from the first processing gas (PG1), is injected into the even-numberedgas passage 111 e through first and second buffering of the secondgas injection module 120 b. - In detail, a first
gas injection member 127 a is connected with one lateral surface of thebody 110 so as to cover one side of the plurality ofgas passages 111, wherein the firstgas injection member 127 a includes a plurality of gas injection holes 127 h which are respectively overlapped with only one side of some gas passages 111 o among the plurality ofgas passages 111. Thus, while one side of each of some gas passages 111 o is communicated with the second gas buffering space (GBS2) of the firstgas injection module 120 a through the plurality of gas injection holes 127 h, one side of each of the remaininggas passages 111 e is closed by the firstgas injection member 127 a. - Meanwhile, the second
gas injection member 127 b is connected with the other lateral surface of thebody 110 so as to cover the other side of the plurality ofgas passages 111, wherein the secondgas injection member 127 b includes a plurality of gas injection holes 127 h which are respectively overlapped with only the other side of the remaininggas passages 111 e among the plurality ofgas passages 111. Thus, while the other side of each of some gas passages 111 o is closed by the firstgas injection member 127 a, the other side of each of the remaininggas passages 111 e is communicated with the second gas buffering space (GBS2) of the secondgas injection module 120 b through the plurality of gas injection holes 127 h. - In the
gas distribution apparatus 400 according to the fourth embodiment of the present invention, if the first processing gas and the second processing gas (PG1, PG2) are the same, the first processing gas (PG1) and the second processing gas (PG2) are respectively injected into somegas passages 1110 and the remaininggas passages 111 e from the opposite directions so that it is possible to uniformly inject the processing gas into the plurality ofgas passages 111. - Even though the first processing gas (PG1) is different from the second processing gas (PG2) in the
gas distribution apparatus 400 according to the fourth embodiment of the present invention, some gas passages 111 o are spatially separated from the remaininggas passages 111 e so that it is possible to prevent the first processing gas (PG1) and the second processing gas (PG2) from being mixed inside thebody 110, and to uniformly distribute the first processing gas (PG1) and the second processing gas (PG2) which are different from each other. -
FIG. 13 is a rear perspective view illustrating a gas distribution apparatus according to the fifth embodiment of the present invention.FIG. 14 is a vertical cross sectional view along ofFIG. 13 .FIG. 15 is a horizontal cross sectional view along IV-IV′ ofFIG. 13 . - Referring to
FIGS. 13 to 15 , thegas distribution apparatus 500 according to the fifth embodiment of the present invention may include abody 110, and first to fourthgas injection modules - The
body 110 may be formed of a plate-shaped metal material with a predetermined thickness, for example, aluminum or aluminum alloy. Thebody 110 is detachably provided in a lower surface of a chamber lid for covering an upper side of a processing chamber (not shown), whereby thebody 110 confronts a substrate supporting means (not shown) provided on a bottom surface of the processing chamber. - The
body 110 is provided with a plurality of first andsecond gas passages - The plurality of
first gas passages 116 are provided at fixed intervals in parallel to a vertical direction (Y) inside thebody 110, and the plurality ofsecond gas passages 117 are provided at fixed intervals in parallel to a horizontal direction (X) inside thebody 110, wherein each of thesecond gas passages 117 is disposed at a predetermined interval from each of thefirst gas passages 116 in a thickness direction (Z) of thebody 110. In the same manner as the aforementioned first embodiment of the present invention, the plurality of first andsecond gas passages - The plurality of fist gas distribution holes 118 are vertically formed on a rear surface of the
body 110 at fixed intervals. Also, the plurality of fist gas distribution holes 118 are communicated with the plurality offirst gas passages 116, respectively, to thereby downwardly distribute first processing gas (PG1), which is injected into the plurality offirst gas passages 116, at a constant pressure. The plurality of second gas distribution holes 119 are vertically formed on the rear surface of thebody 110 at fixed intervals, and are disposed to avoid thefirst gas passages 116. Also, the plurality of second gas distribution holes 119 are communicated with the plurality ofsecond gas passages 117, respectively, to thereby downwardly distribute second processing gas (PG2), which is injected into the plurality ofsecond gas passages 117, at a constant pressure. In this case, the second processing gas (PG2) may be the same as or different from the first processing gas (PG1). In the same manner as the first embodiment of the present invention, the plurality of first and second gas distribution holes 118 and 119 may include at least one distribution nozzle. - The first
gas injection module 120 a is connected with a first lateral surface of thebody 110. The firstgas injection module 120 a injects the first processing gas (PG1), which is supplied through at least one of firstgas supply pipe 130 a, into one side of each of thefirst gas passages 116. This firstgas injection module 120 a is identical to the firstgas injection module 120 a according to the first embodiment of the present invention, whereby a detailed description for the firstgas injection module 120 a will be omitted. - The second
gas injection module 120 b is connected with a second lateral surface being opposite to the first lateral surface of thebody 110. The secondgas injection module 120 b injects the first processing gas (PG1), which is supplied through at least one of secondgas supply pipe 130 b, into the other side of each of thefirst gas passages 116. This secondgas injection module 120 b is identical to the secondgas injection module 120 b according to the first embodiment of the present invention, whereby a detailed description for the secondgas injection module 120 b will be omitted. - The third
gas injection module 120 c is connected with a third lateral surface of thebody 110. The thirdgas injection module 120 c injects the second processing gas (PG2), which is supplied through at least one of thirdgas supply pipe 130 c, into one side of each of thesecond gas passages 117. In this case, the second processing gas (PG2) may be the same as or different from the first processing gas (PG1). The thirdgas injection module 120 c according to one embodiment of the present invention may include a first gas buffering space (GBS1) for firstly buffering the second processing gas supplied from the thirdgas supply pipe 130 c, and a second gas buffering space (GBS2) for secondly buffering the second processing gas (PG2) supplied from the first gas buffering space (GBS1) and injecting the second processing gas (PG2) into one side of each of the plurality ofsecond gas passages 117. For example, the thirdgas injection module 120 c may include a firstgas buffering member 121 with the first gas buffering space (GBS1), and a secondgas buffering member 123 with the second gas buffering space (GBS2). Except that the second processing gas (PG2) supplied from the thirdgas supply pipe 130 c is injected into one side of each of the plurality ofsecond gas passages 117, the thirdgas injection module 120 c is identical in structure to the aforementioned firstgas injection module 120 a, whereby a detailed description for the structure of the thirdgas injection module 120 c will be omitted. - The fourth
gas injection module 120 d is connected with a fourth lateral surface being opposite to the third lateral surface of thebody 110. The fourthgas injection module 120 d injects the second processing gas (PG2), which is supplied through at least one of fourthgas supply pipe 130 d, into the other side of each of thesecond gas passages 117. In the same manner as the thirdgas injection module 120 c, the fourthgas injection module 120 d may include a firstgas buffering member 121 with a first gas buffering space (GBS1), and a secondgas buffering member 123 with a second gas buffering space (GBS2). Except that the second processing gas (PG2) supplied from the fourthgas supply pipe 130 d is injected into the other side of each of the plurality ofsecond gas passages 117, the fourthgas injection module 120 d is identical in structure to the aforementioned thirdgas injection module 120 c, whereby a detailed description for the fourthgas injection module 120 d will be omitted. - In the
gas distribution apparatus 500 according to the fifth embodiment of the present invention, if the first processing gas and the second processing gas (PG1, PG2) are the same, the first processing gas (PG1) and the second processing gas (PG2) are respectively injected into the both sides of each of the first andsecond gas passages gas passages - Even though the first processing gas (PG1) is different from the second processing gas (PG2) in the
gas distribution apparatus 500 according to the fifth embodiment of the present invention, the plurality offirst gas passages 116 are spatially separated from the plurality ofsecond gas passages 117 so that it is possible to prevent the first processing gas (PG1) and the second processing gas (PG2) from being mixed inside thebody 110, and to uniformly distribute the first processing gas (PG1) and the second processing gas (PG2) which are different from each other. - For the more uniform injection of the processing gas (PG1, PG2) into the plurality of first and
second gas passages gas distribution apparatus 500 according to the fifth embodiment of the present invention may further include the structure of thegas injection member FIGS. 7 to 9 , the structure of the plurality ofgroup buffering members FIG. 10 , the structure of the sealingcap 140 shown inFIG. 11 , or the structure of thegas injection member FIG. 12 , wherein the above structures may be disposed in each of the first to fourth lateral surfaces of thebody 110. For example, if thegas distribution apparatus 500 according to the fifth embodiment of the present invention includes thegas injection member FIG. 12 , the processing gas injected into the plurality of first andsecond gas passages first gas passages 116 through the firstgas injection member 127 a, the second processing gas (PG2) may be supplied to the remaining first gas passages through the secondgas injection member 127 b, the third processing gas which is the same as or different from the second processing gas may be supplied to some of the second gas passages among the plurality ofsecond gas passages 117 through the third gas injection member (not shown) which is the same as the aforementioned firstgas injection member 127 a, and the fourth processing gas which is the same as or different from the third processing gas may be supplied to the remaining second gas passages through the fourth gas injection member (not shown) which is the same as the aforementioned secondgas injection member 127 b. -
FIG. 16 is a cross sectional view illustrating an apparatus for processing substrate according to one embodiment of the present invention. - Referring to
FIG. 16 , the apparatus forprocessing substrate 700 may include aprocessing chamber 710, achamber lid 730, a substrate supporting means 750, and a gas distribution means 770. - The
processing chamber 710 is formed in shape of “U” whose upper side is opened. A substrate inlet (not shown), through which a substrate is loaded or unloaded, is formed at one side of theprocessing chamber 710, and at least oneexhaust port 712 for discharging the processing gas is formed on a bottom surface of theprocessing chamber 710. - The
chamber lid 730 is provided at an upper side of theprocessing chamber 710, to thereby cover the upper side of theprocessing chamber 710. In this case, an insulatingmember 720 such as O-ring is provided between a connection part between theprocessing chamber 710 and thechamber lid 730. The insulatingmember 720 seals a space between theprocessing chamber 710 and thechamber lid 730, and electrically separates theprocessing chamber 710 and thechamber lid 730 from each other. - The
chamber lid 730 is connected with an external power supply means 790 via apower cable 792, and is supplied with a plasma power from the power supply means 790. In this case, animpedance matching circuit 794 may be provided in thepower cable 792. Theimpedance matching circuit 794 may include at least two impedance devices (not shown) for matching a source impedance and a load impedance of the plasma power supplied to thechamber lid 730. The impedance device may be formed of at least one of variable capacitor and variable inductor. - The substrate supporting means 750, which is provided in the
processing chamber 710, supports the substrate (S) which is loaded into a processing space by the use of substrate transferring apparatus (not shown). The substrate supporting means 750 may be movably provided in theprocessing chamber 710. In this case, the substrate supporting means 750 is movably provided by the use of elevatingaxis 752 penetrating through the bottom surface of theprocessing chamber 710 so that the substrate supporting means 750 is moved to a processing position or a substrate loading and unloading position by the movement of the elevatingaxis 752 in accordance with the driving of elevating apparatus (not shown). Herein, a space between the elevatingaxis 752 and theprocessing chamber 710 is sealed by abellows 754. - The gas distribution means 770 confronting the substrate supporting means 750 is connected with a lower surface of the
chamber lid 730. The gas distribution means 770 distributes the processing gas supplied from an external gas supply apparatus onto the substrate (S). The gas distribution means 770 may be formed of any one of thegas distribution apparatuses FIGS. 2 to 15 , wherein a detailed description for the gas distribution means 770 will be omitted. - Hereinafter, a thin film deposition process using the above
substrate processing apparatus 700 according to the embodiment of the present invention will be described as follows. - First, a plurality of substrates (S) or a large-sized substrate (S) may be loaded and placed onto the substrate supporting means 750.
- According as the processing gas is injected into the gas injection module of the gas distribution means 770 through the
gas supply pipe chamber lid 730 through the power supply means 790, whereby the plasma power is applied to the gas distribution means 770 through thechamber lid 730. Thus, the plasma is formed between the substrate supporting means 750 and the gas distribution means 770. - Accordingly, the processing gas distributed from the gas distribution means 770 is activated by the plasma, and is distributed onto the substrate (S), to thereby deposit a predetermined thin film onto the upper surface of the substrate (S) by the activated processing gas.
- In the
substrate processing apparatus 700 according to the present invention, the processing gas is firstly and secondly buffered and diffused in the gas injection module connected with the body of the gas distribution means 770, and is then injected into the gas passages, whereby the processing gas is uniformly distributed onto the substrate (S), to thereby enable the uniform substrate processing. For cleaning the gas distribution means 770, both ends of each of the plurality of gas passages are exposed to the external by the detachment of the gas injection module, which is detachably provided in the body of the gas distribution means 770, so that it is possible to facilitate the cleaning of the gas passages and the gas distribution holes, and to reduce the cleaning time. - It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. Thus, it is intended that the present invention covers the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (20)
1. An apparatus for distributing gas comprising:
a body including a plurality of gas passages connected with a plurality of gas distribution holes for distributing processing gas; and
at least one gas injection module connected with at least one lateral surface of the body and respectively communicated with the plurality of gas passages,
wherein the gas injection module includes:
a first gas buffering space for firstly buffering the processing gas supplied from the external; and
a second gas buffering space for secondly buffering the processing gas firstly buffered in the first gas buffering space, and injecting the secondly buffered processing gas into the plurality of gas passages.
2. The apparatus according to claim 1 , wherein the gas injection module includes:
a first gas buffering member provided with the first gas buffering space being communicated with at least one gas supply pipe, and connected with one lateral surface of the body; and
a second gas buffering member communicated with the first gas buffering space, and provided with the second gas buffering space being communicated with the plurality of gas passages.
3. The apparatus according to claim 2 , wherein the gas injection module further includes a sealing member for sealing a space between the first gas buffering member and the lateral surface of the body.
4. The apparatus according to claim 2 , wherein the second gas buffering member is provided with a plurality of communication holes being communicated with the first gas buffering space.
5. The apparatus according to claim 4 , wherein a diameter of each of the plurality of communication holes is gradually increased from the center of the body toward both ends of the body with respect to a longitudinal direction of the lateral surface of the body.
6. The apparatus according to claim 4 , wherein an interval between the center of each of the adjacent communication holes is gradually decreased from the center of the body toward both ends of the body with respect to a longitudinal direction of the lateral surface of the body.
7. The apparatus according to claim 2 , wherein,
the gas injection module further includes a gas injection member disposed inside the second gas buffering member, and connected with the lateral surface of the body so as to cover the plurality of gas passages being communicated with the second gas buffering space, and
the gas injection member is provided with a plurality of gas injection holes for injecting the processing gas secondly buffered in the second gas buffering space into the plurality of gas passages.
8. The apparatus according to claim 7 , wherein the gas injection hole is smaller than the gas passage.
9. The apparatus according to claim 7 , wherein a diameter of each of the plurality of gas injection holes is gradually increased from the center of the body toward both ends of the body with respect to a longitudinal direction of the lateral surface of the body.
10. The apparatus according to claim 7 , wherein the lateral surface of the body is provided with an insertion groove into which the gas injection member is to be inserted, and the gas injection member is inserted into and connected with the insertion groove while being detachably provided in the insertion groove.
11. The apparatus according to claim 2 , wherein,
the plurality of gas passages are grouped into a plurality of gas passage groups, wherein each gas passage group includes the adjacent two or more gas passages, and
the second gas buffering member includes a plurality of group buffering members which secondly buffer the processing gas supplied from the first gas buffering space and inject the secondly-buffered processing gas into the plurality of gas passage groups.
12. The apparatus according to claim 1 , wherein the gas injection module includes:
a first gas injection module connected with one lateral surface of the body, wherein the first gas injection module includes first and second gas buffering spaces for injecting first processing gas into some of the gas passages among the plurality of gas passages, and
a second gas injection module connected with the other lateral surface of the body in the opposite side of one lateral surface of the body, wherein the second gas injection module includes first and second gas buffering spaces for injecting second processing gas, which is the same as or different from the first processing gas, into the remaining gas passages among the plurality of gas passages.
13. The apparatus according to claim 12 , wherein,
one side of each of some gas passages among the plurality of gas passages is communicated with the second gas buffering space of the first gas injection module, and the other side of each of some gas passages is closed, and
one side of each of the remaining gas passages among the plurality of gas passages is closed, and the other side of each of the remaining gas passages is communicated with the second gas buffering space of the second gas injection module.
14. The apparatus according to claim 12 , wherein,
the first gas injection module further includes a first gas injection member for injecting the first processing gas secondly buffered in the second gas buffering space into some of the gas passages among the plurality of gas passages, and
the second gas injection module further includes a second gas injection member for injecting the second processing gas secondly buffered in the second gas buffering space into the remaining gas passages among the plurality of gas passages.
15. The apparatus according to claim 1 , wherein the plurality of gas passages include:
a plurality of first gas passages provided at fixed intervals in parallel to a first longitudinal direction of the body; and
a plurality of second gas passages disposed at a predetermined interval from the plurality of first gas passages in a thickness direction of the body, and provided at fixed intervals in parallel to a second longitudinal direction being perpendicular to the first longitudinal direction of the body.
16. The apparatus according to claim 15 , wherein the gas injection module includes:
a first gas injection module connected with a first lateral surface of the body, wherein the first gas injection module includes the first and second gas buffering spaces for injecting first processing gas into one side of the plurality of first gas passages;
a second gas injection module connected with a second lateral surface of the body in the opposite side of the first lateral surface, wherein the second gas injection module includes the first and second gas buffering spaces for injecting the first processing gas into the other side of the plurality of first gas passages;
a third gas injection module connected with a third lateral surface of the body, wherein the first and second gas buffering spaces for injecting second processing gas, which is the same as or different from the first processing gas, into one side of the plurality of second gas passages; and
a fourth gas injection module connected with a fourth lateral surface of the body in the opposite side of the third lateral surface, wherein the fourth gas injection module includes the first and second gas buffering spaces for injecting the second processing gas into the other side of the plurality of second gas passages.
17. The apparatus according to claim 16 , wherein each of the first to fourth gas injection modules further includes a gas injection member with a plurality of gas injection holes for injecting the corresponding processing gas secondly buffered in the second gas buffering space into the corresponding gas passage.
18. The apparatus according to claim 15 , wherein the gas injection module includes:
a first gas injection module connected with a first lateral surface of the body, wherein the first gas injection module includes the first and second gas buffering spaces for injecting first processing gas into some of first gas passages among a plurality of first gas passages;
a second gas injection module connected with a second lateral surface of the body in the opposite side of the first lateral surface, wherein the second gas injection module includes the first and second gas buffering spaces for injecting second processing gas, which is the same as or different from the first processing gas, into the remaining first gas passages among the plurality of first gas passages;
a third gas injection module connected with a third lateral surface of the body, wherein the third gas injection modules includes the first and second gas buffering spaces for injecting third processing gas, which is the same as or different from the second processing gas, into some of second gas passages among a plurality of second gas passages; and
a fourth gas injection module connected with a fourth lateral surface of the body in the opposite side of the third lateral surface, wherein the fourth gas injection module includes the first and second gas buffering spaces for injecting fourth processing gas, which is the same as or different from the third processing gas, into the remaining second gas passages among the plurality of second gas passages.
19. The apparatus according to claim 18 , wherein each of the first to fourth gas injection modules further includes a gas injection member with a plurality of gas injection holes for injecting the corresponding processing gas secondly buffered in the second gas buffering space into the corresponding gas passage.
20. An apparatus for processing substrate comprising:
a processing chamber;
a chamber lid for covering an upper side of the processing chamber;
a substrate supporting means for supporting a substrate, the substrate supporting means provided inside the processing chamber; and
a gas distribution means confronting the substrate supporting means, the gas distribution means connected with a lower surface of the chamber lid,
wherein the gas distribution means includes an apparatus for distributing gas,
wherein the apparatus for distributing gas includes:
a body including a plurality of gas passages connected with a plurality of gas distribution holes for distributing processing gas; and
at least one gas injection module connected with at least one lateral surface of the body and respectively communicated with the plurality of gas passages,
wherein the gas injection module includes:
a first gas buffering space for firstly buffering the processing gas supplied from the external; and
a second gas buffering space for secondly buffering the processing gas firstly buffered in the first gas buffering space, and injecting the secondly buffered processing gas into the plurality of gas passages.
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KR1020140043632A KR102215965B1 (en) | 2014-04-11 | 2014-04-11 | Apparatus for injection gas and apparatus for processing substrate including the same |
KR10-2014-0043632 | 2014-04-11 | ||
PCT/KR2015/003343 WO2015156542A1 (en) | 2014-04-11 | 2015-04-03 | Gas spraying apparatus and substrate processing apparatus including same |
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PCT/KR2015/003343 A-371-Of-International WO2015156542A1 (en) | 2014-04-11 | 2015-04-03 | Gas spraying apparatus and substrate processing apparatus including same |
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US16/593,931 Division US11293097B2 (en) | 2014-04-11 | 2019-10-04 | Apparatus for distributing gas and apparatus for processing substrate including the same |
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US16/593,931 Active 2035-11-27 US11293097B2 (en) | 2014-04-11 | 2019-10-04 | Apparatus for distributing gas and apparatus for processing substrate including the same |
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US (2) | US20170121815A1 (en) |
KR (1) | KR102215965B1 (en) |
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US11293097B2 (en) | 2014-04-11 | 2022-04-05 | Jusung Engineering Co., Ltd. | Apparatus for distributing gas and apparatus for processing substrate including the same |
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KR102415319B1 (en) * | 2015-11-12 | 2022-07-01 | 세메스 주식회사 | Gas supply unit and substrate treating apparatus including the same |
CN107099784B (en) * | 2017-05-13 | 2019-05-07 | 华中科技大学 | A kind of modularization spray head and device for space isolation atomic layer deposition |
US11149350B2 (en) * | 2018-01-10 | 2021-10-19 | Asm Ip Holding B.V. | Shower plate structure for supplying carrier and dry gas |
CN114959650B (en) * | 2022-05-18 | 2023-10-20 | 江苏微导纳米科技股份有限公司 | Semiconductor device |
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TW201604313A (en) | 2016-02-01 |
US20200032393A1 (en) | 2020-01-30 |
US11293097B2 (en) | 2022-04-05 |
KR102215965B1 (en) | 2021-02-18 |
TWI658167B (en) | 2019-05-01 |
CN106415789A (en) | 2017-02-15 |
KR20150118251A (en) | 2015-10-22 |
WO2015156542A1 (en) | 2015-10-15 |
CN106415789B (en) | 2019-06-04 |
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