KR102328847B1 - Apparatus for treating a large area substrate - Google Patents

Abstract

The present invention relates to a large-area substrate processing apparatus, and in particular, a large-area substrate processing apparatus in which the arrangement form of the injection plate holes formed in the injection plate disposed on the upper end of the shower head is formed differently for each region of the injection plate. It is a technical task to provide To this end, a large-area substrate processing apparatus according to the present invention includes a chamber having a reaction space; a substrate support for supporting a large-area substrate; a diffuser cover mounted on the upper end of the substrate support in the chamber and supplying a gas to be deposited on the large-area substrate; a showerhead having a plurality of shower holes and mounted on a lower end of the diffuser cover, the showerhead for spraying the gas toward the substrate support through the shower holes; and an injection plate having a plurality of injection plate holes formed therein, disposed between the showerhead and the diffuser cover, and configured to spray the gas injected from the diffuser cover in the showerhead direction through the injection plate holes, wherein The arrangement of the injection plate holes is formed differently for each area of the injection plate.

Description

Large area substrate processing device {APPARATUS FOR TREATING A LARGE AREA SUBSTRATE}

The present invention relates to a substrate processing apparatus for forming a thin film on a substrate by spraying gas on a substrate, and more particularly, to a large-area substrate processing apparatus for spraying gas on a large-area substrate.

Flat panel displays (FPDs) are used in various types of electronic products, including mobile phones, tablet PCs, and notebook computers. Flat panel display devices include a liquid crystal display (LCD), a plasma display device (PDP), an organic light emitting display device (OLED), and the like, and recently electrophoretic display. A device (EPD: ELECTROPHORETIC DISPLAY) is also widely used.

Among flat panel display devices (hereinafter simply referred to as 'display devices'), liquid crystal displays are currently most widely commercialized due to their advantages of mass production technology, ease of driving means, and implementation of high quality.

Among display devices, an organic light emitting display device (OLED) has a high response speed of 1 ms or less, and has low power consumption, and thus is attracting attention as a next-generation display device.

Recently, as the area of the display device as described above increases, the area of the panel constituting the display device also increases. The panel having a large area is manufactured by forming various kinds of thin films on a large area substrate.

Various types of the thin films are formed by a Physical Vapor Deposition (PVD) (hereinafter simply referred to as 'PVD') method, or a Chemical Vapor Deposition (CVD: Metal Organic Chemical Vapor Deposition) (hereinafter simply referred to as 'CVD'). It may be deposited on the large-area substrate by various deposition methods, such as the method of d).

1 is a configuration diagram of a conventional substrate processing apparatus according to an embodiment, and in particular, a configuration diagram of an embodiment of a CVD apparatus using the chemical vapor deposition method. FIG. 2 is a plan view of a showerhead applied to the conventional substrate processing apparatus shown in FIG. 1 .

Among the conventional substrate processing apparatuses, the conventional CVD apparatus using the CVD method includes, as shown in FIG. 1 , a substrate support (not shown) supporting a substrate, and a gas supply pipe 70 through which a gas to be deposited on the substrate is supplied. ) is mounted on the bottom of the diffuser cover 60 by the connection part 30, and is spaced apart from the diffuser cover 60 by a predetermined distance, and the gas is sprayed onto the substrate. It includes a showerhead 20 for doing this.

The diffuser cover 60 is mounted in the chamber, not shown. The gas supply pipe 70 is mounted on the diffuser cover 60 , and the gas supplied from a gas supply unit (not shown) connected to the gas supply pipe 70 passes through the gas supply pipe 70 , and the diffuser It is injected into the diffusion space 40 formed between the cover 60 and the showerhead 20 .

The showerhead 20 functions to inject the gas injected into the diffusion space 40 into the chamber (not shown) through the shower hole 21 . To this end, a plurality of shower holes 21 are formed in the shower head 20 as shown in FIG. 1 .

In the conventional substrate processing apparatus configured as described above, power is supplied to the diffuser cover 60 and the substrate support (not shown), and the power is provided between the showerhead 20 and the substrate support. An electric field is formed. In this case, an AC power is generally used as the power source. The gas that has passed through the shower hole 21 of the showerhead 20 is moved toward the substrate support part by the electric field and is deposited on the substrate placed on the substrate support part.

As described above, as the area of the display device increases, the area of the panel constituting the display device also increases, and the size of the substrate constituting the panel also increases. In this case, a large-area substrate (hereinafter simply referred to as a 'large-area substrate') is also placed on the substrate support portion of the substrate processing apparatus. Accordingly, the overall size of the substrate processing apparatus is also increased. Accordingly, the area of the substrate support part (not shown), the shower head 20 and the diffuser cover 60 is also increased.

As the areas of the showerhead 20 and the diffuser cover 60 increase, the amount of gas injected from the central portion of the showerhead 20 and the gas injected from the outer portion of the showerhead 20 are increased. There is a difference in the amount, and due to the difference, the uniformity of the thin film deposited on the large-area substrate is lowered.

For example, in a conventional large-area processing substrate, as shown in FIGS. 1 and 2 , the sizes of the shower holes 21 formed in the shower head 20 are constant, and the shower holes 21 ) are formed at regular intervals on the front surface of the showerhead 20 .

In addition, the gas is injected into the diffusion space 40 through the gas supply pipe 70 mounted at the center of the diffuser cover 60 , and then diffuses in the diffusion space 40 . Even if the gas is diffused, it is difficult for the gas density of the central portion (X) of the diffusion space (40) and the outer portion (Y) of the diffusion space to be uniform.

Accordingly, the amount of gas injected through the shower hole 21 formed in the central portion X of the showerhead 20 and the shower formed in the outer portion Y of the showerhead 20 . The amount of gas injected through the hole 21 is different, and accordingly, the uniformity of the thin film deposited on the large-area substrate by the gas is reduced. That is, in a central region corresponding to the central portion X of the showerhead 20 to which a large amount of the gas is injected among the large-area substrate, a thin film is thickly deposited by a large amount of the gas, and a small amount of the gas is injected. In the outer region corresponding to the outer portion Y of the showerhead 20, a thin film is deposited by a small amount of the gas, thereby reducing the uniformity of the thin film of the large-area substrate.

The present invention has been proposed to solve the above problems, and the arrangement form of the spray plate holes formed in the spray plate disposed on the upper end of the shower head is formed differently for each area of the spray plate, a large-area substrate processing apparatus It is a technical task to provide

A large-area substrate processing apparatus according to the present invention for achieving the above technical problem, a chamber having a reaction space; a substrate support for supporting a large-area substrate; a diffuser cover mounted on the upper end of the substrate support in the chamber and supplying a gas to be deposited on the large-area substrate; a showerhead having a plurality of shower holes and mounted on a lower end of the diffuser cover, the showerhead for spraying the gas toward the substrate support through the shower holes; and an injection plate having a plurality of injection plate holes formed therein, disposed between the showerhead and the diffuser cover, and configured to spray the gas injected from the diffuser cover in the showerhead direction through the injection plate holes, wherein The arrangement of the injection plate holes is formed differently for each area of the injection plate.

According to the present invention, the uniformity of the thickness of the thin film formed on the large-area substrate can be improved.

1 is a configuration diagram of an embodiment of a conventional substrate processing apparatus.
FIG. 2 is a plan view of a showerhead applied to the conventional substrate processing apparatus shown in FIG. 1;
3 is a configuration diagram of an apparatus for processing a large-area substrate according to an embodiment of the present invention;
4 is an exemplary view showing a diffuser cover and a spray plate applied to a large-area substrate processing apparatus according to the present invention.
5 is a plan view of a spray plate applied to a large-area substrate processing apparatus according to the present invention.
6 is another plan view of a spray plate applied to a large-area substrate processing apparatus according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a block diagram of a large-area substrate processing apparatus according to an embodiment of the present invention.

As the size of a display device such as a liquid crystal display device (LCD) or an organic light emitting display device (OLED) increases, the area of a panel constituting the display device also increases.

Accordingly, the substrate constituting the large-area panel (hereinafter simply referred to as a 'large-area panel') is also increasing in size. The large-area substrate is hereinafter simply referred to as a large-area substrate. Hereinafter, the present invention will be described by taking as an example a case in which the large-area substrate is a substrate constituting the large-area panel. However, the large-area substrate may be a substrate used in a semiconductor manufacturing process.

By forming various kinds of thin films on the large-area substrate, the large-area panel is being manufactured.

A method of depositing the thin films on the large-area substrate includes a physical vapor deposition (PVD) (hereinafter simply referred to as 'PVD') method, or a chemical vapor deposition (CVD: Metal Organic Chemical Vapor Deposition) ( Hereinafter, simply referred to as 'CVD') method and the like.

As the large-area substrate increases, the size of the deposition apparatuses (hereinafter simply referred to as 'large-area substrate processing apparatus') for depositing a thin film on the large-area substrate also increases.

A large-area substrate processing apparatus according to the present invention is an apparatus for forming a thin film on the large-area substrate by supplying a gas, for example, an apparatus using the CVD method (hereinafter simply referred to as a 'CVD apparatus') Alternatively, it may be an apparatus using a Metal Organic Chemical Vapor Deposition (MOCVD) method (hereinafter simply referred to as a 'MOCVD apparatus'), or, or a plasma enhanced vapor deposition (PECVD) method. It may be an apparatus using a Chemical Vapor Deposition) method, and may be various other apparatuses. Hereinafter, an apparatus using a plasma vapor deposition method will be described as an example of a large-area substrate processing apparatus according to the present invention. However, the present invention can be applied to various kinds of chemical vapor deposition apparatuses, as described above.

As shown in FIG. 3 , the apparatus for processing a large-area substrate according to the present invention includes a chamber 110 having a reaction space, a substrate support unit 190 supporting a large-area substrate 200 , and an interior of the chamber 110 . A diffuser cover 160 and a plurality of shower holes 121 that are mounted on the upper end of the substrate support 190 and supply gas to be deposited on the large-area substrate 200 are formed, and the diffuser cover 160 ), a showerhead 120 for spraying the gas in the direction of the substrate support 190 through the shower holes 121, and a plurality of injection plate holes 181 are formed, and the An injection plate ( 180). Here, the arrangement of the injection plate holes 181 is formed differently for each area of the injection plate.

First, the chamber 110 forms an enclosed space. In the sealed space, the diffuser cover 160 , the spray plate 180 , the showerhead 120 , and the substrate support part 190 are mounted. The gas injected from the showerhead 120 moves in the direction of the substrate support 190 through the sealed space, and is deposited on the large-area substrate 200 disposed on the substrate support 190 .

As the gas is deposited on the large-area substrate 200 , the thin film is formed.

A door (not shown) through which the large-area substrate 200 flows in or out is formed in the chamber 110 .

Next, the diffuser cover 160, in the outer direction of the diffuser cover 160, protrudes from the side surfaces of the chamber 110, or by the support parts 150 mounted on the side surfaces, the chamber It may be mounted on the inside of 110 .

A gas supply pipe 170 through which gas is supplied is mounted on the diffuser cover 160 . The gas supply pipe 170 may be mounted on a central portion of the diffuser cover 160 .

The gas supply pipe 170 is connected to a gas supply unit (not shown) provided outside the chamber 110 . The gas supply unit (not shown) supplies the gas used for depositing the thin film to the gas supply pipe 170 .

The gas may include at least one or more different gases depending on the configuration of the thin film. In this case, the gas supply unit may separately supply at least one or more different gases to the gas supply pipe 170 .

As described above, the diffuser cover 160 may be mounted inside the chamber 110 by the support 150 mounted on the side of the chamber 110, but additionally, a chamber bolt ( 300) may be mounted in the chamber 110 .

When the diffuser cover 160 is mounted in the chamber 100 only by the support 150 mounted on the outer part of the diffuser cover 160, by the weight of the diffuser cover 160, A central portion of the diffuser cover 160 may droop toward the substrate support 190 .

For example, in order to form the thin film on the large-area substrate 200 , the areas of the diffuser cover 160 and the showerhead 120 should also be increased.

When the area of the diffuser cover 160 increases, the weight of the diffuser cover 160 also increases.

When the area of the diffuser cover 160 increases and the weight of the diffuser cover 160 increases, only the support part 150 mounted on the outside of the diffuser cover 160 causes the diffuser cover 160 . ) cannot be disposed in the chamber 110 in parallel with the substrate support 190 . That is, a phenomenon in which the central portion of the diffuser cover 160 sags in the direction of the substrate support 190 may occur.

In order to prevent the sagging phenomenon as described above, in the present invention, the chamber bolt 300 may be used.

The chamber bolt 300 connects the upper surface of the chamber 110 and the upper surface of the diffuser cover 160 .

For example, as shown in FIG. 3 , the chamber bolt 300 passes through the chamber 110 from the outside of the upper surface of the chamber 300 and is mounted on the upper surface of the diffuser cover 160 . have.

In this case, the chamber bolt 300 may be mounted on the central portion of the diffuser cover 160 . In addition, at least two or more of the chamber bolts 300 may be mounted on the diffuser cover 160 .

A phenomenon in which the central portion of the diffuser cover 160 sags can be prevented by the chamber bolt 300 .

The chamber bolt 300 is formed in the form of a bolt, and can connect the diffuser cover 160 and the chamber 110, but is formed in various forms other than the bolt, so that the diffuser cover 160 and the chamber 110 are formed in the form of a bolt. ) can be connected. For example, it may be formed of the bar and the ring. In this case, the ring may be mounted inside the upper surface of the diffuser cover 160 and the upper surface of the chamber 110 , and the bar may be mounted on the two rings.

Next, the substrate support 190 is mounted inside the chamber 110 , and in particular, is mounted on the lower end of the showerhead 120 .

The substrate support part 190 performs a function of supporting the large area substrate 200 . The large-area substrate 200 may be used for manufacturing the panel constituting the display device, but may be used for various devices other than the display device. For example, the large-area substrate 200 may be a substrate used in a semiconductor process.

Next, the showerhead 120 is mounted on the lower end of the spray plate 180 , flows into the chamber 110 by the diffuser cover 160 , and passes through the spray plate 180 . It performs a function of injecting gas in the direction of the substrate support 190 . The gas injected in the direction of the substrate support 190 is deposited on the large-area substrate 200 to form the thin film.

The showerhead 120 is mounted to the lower end of the spray plate 180 by the connection part 130 .

A diffusion space 140 is formed by the shower head 120 , the connection part 130 , and the spray plate 180 .

The gas introduced into the diffuser cover 160 through the gas supply pipe 170 mounted on the diffuser cover 160 passes through the injection plate holes 181 formed in the injection plate 180, the It diffuses into the diffusion space 140 .

A plurality of shower holes 121 are formed in the shower head 120 . The gas diffused into the diffusion space 140 is injected into the reaction space of the chamber through the shower hole 121 .

Here, the shower holes 121 are formed on the front surface of the shower head 120 at regular intervals and the same size.

Finally, the injection plate 180 is mounted between the diffuser cover 160 and the showerhead 120 , and the gas introduced into the chamber 110 by the diffuser cover 160 is It is transmitted to the diffusion space 140 through the injection plate holes 181 formed in the injection plate 180 . The gas transferred to the diffusion space 140 is transferred to the large-area substrate 200 through the shower holes 121 . Here, a diffusion space is also formed between the spray plate 180 and the diffuser cover 160 .

The spray plate 180 is mounted on the lower end of the diffuser cover 160 by the spray plate connection part.

A plurality of injection plate holes 181 are formed in the injection plate 180 . The gas injected from the diffuser cover 160 is diffused into a diffusion space between the diffuser cover 160 and the injection plate 180 , and then is formed with the injection plate 180 through the injection plate holes 181 . It is transferred to the diffusion space 140 between the shower heads 120 .

The gas transferred to the diffusion space 140 is injected into the reaction space of the chamber through the shower hole 121 .

Here, the injection plate holes 181 are formed differently for each area of the injection plate 180 .

For example, the size of the injection plate holes 181 may be different, or the spacing between the injection plate holes 181 may be different. 3 shows the injection plate 180 having different sizes of the injection plate holes 181 . The size of the injection plate hole 181 means the inner diameter of the injection plate hole 181 .

The arrangement of the injection plate holes 181 will be described in detail with reference to FIGS. 4 to 6 .

Although not shown in the drawings, the spray plate 180 and the diffuser cover 160 may be disposed in a state where a predetermined gap is formed by a fixing bolt connecting the spray plate 180 and the diffuser cover 160 . can

The fixing bolt may prevent the spray plate 180 from sagging in the shower head 120 direction.

In addition, the fixing bolt includes a height of a diffusion space formed between the spray plate 180 and the diffuser cover 160 and a diffusion space 140 formed between the spray plate 180 and the shower head 120 . height can be kept constant.

The fixing bolt may be mounted on the central portion of the spray plate 180 , and at least two or more fixing bolts may be mounted between the spray plate 180 and the diffuser cover 160 .

4 is an exemplary view showing a diffuser cover and a spraying plate applied to the large-area substrate processing apparatus according to the present invention, FIG. 5 is a plan view of the spraying plate applied to the large-area substrate processing apparatus according to the present invention, and FIG. 6 is It is another plan view of the spray plate applied to the large-area substrate processing apparatus according to the present invention.

The spray plate 180 is mounted on the lower end of the diffuser cover 160 , and sprays the gas introduced into the chamber 110 by the diffuser cover 160 in the showerhead 120 direction. perform the function

The gas injected in the showerhead 120 direction is injected in the direction of the substrate support 190 through the shower holes 121 , and the gas injected in the direction of the substrate support 190 is the large-area substrate 200 . ) to form the thin film.

The spray plate 180 is mounted on the lower end of the diffuser cover 160 by the spray plate connection part 182 .

The spray plate connection part 182 may be integrally formed with the spray plate 180 .

A diffusion space 140 is formed by the spray plate 180 , the spray plate connection part 182 , and the diffuser cover 160 . As described above, the space formed by the spray plate 180 , the spray plate connection part 182 , and the diffuser cover 160 , and the spray plate 180 , the connection part 130 , and the shower head 120 . ) can be referred to as the diffusion space 140 . Accordingly, in FIGS. 3 and 4 , the diffusion space is indicated by the same reference numeral 140 .

The gas introduced into the diffuser cover 160 through the gas supply pipe 170 mounted on the diffuser cover 160 includes the injection plate 180 , the injection plate connection part 182 , and the diffuser cover. It diffuses into the diffusion space 140 formed by 160 .

A plurality of injection plate holes 181 are formed in the injection plate 180 . The gas diffused into the diffusion space 140 is transferred to the diffusion space between the spray plate 180 and the shower head 120 through the injection plate holes 181 .

Here, the arrangement of the injection plate holes 181 is different for each area of the injection plate 180 .

First, the size of the injection plate holes 181 may be formed differently for each area of the injection plate 180 .

For example, as shown in FIG. 5 , the size of the injection plate holes 181 may be formed differently for each area of the injection plate 180 . In this case, the spacing between the injection plates 181 may be the same. The size of the injection plate hole 181 means the inner diameter of the injection plate hole 181 . When the size of the injection plate hole 181, that is, the inner diameter increases, the amount of gas injected through the injection plate hole 181 increases, and when the size of the injection plate hole 181 decreases, the injection plate hole 181 ), the amount of gas injected through

When it is assumed that the size of the injection plate holes 181 formed in the first area (A) is the largest, the size of the injection plate holes 181 formed in the third area (C) is formed to be the smallest. In addition, the size of the spray plate holes 181 formed in the second area B between the first area A and the third area C is similar to the size of the spraying plate holes 181 formed in the first area A. It may be formed smaller than the size of the plate hole and larger than the size of the injection plate hole formed in the third region (C).

The first area (A) means the outer portion of the spray plate 180, the third area (C) means the central portion of the spray plate (180), the second area (B) It means between the third area (A) and the second area (B).

Through the gas supply pipe 170 mounted at a position corresponding to the central portion of the spray plate 180 , the gas introduced into the diffusion space 140 between the spray plate 180 and the diffuser cover 160 . As shown in FIG. 4 , the gas is diffused from the diffusion space 140 to the outer portion of the injection plate 180 . However, the amount of the gas diffused to the outer portion of the injection plate 180 is smaller than the amount of the gas diffused to the central portion of the injection plate 180 . In this case, the density of the gas injected through the injection plate holes 181 formed in the central portion of the injection plate 180 is determined by the injection plate hole 181 formed in the outer portion of the injection plate 180 . ) may be greater than the density of the gas injected through. The uniformity of the thickness of the thin film formed on the large-area substrate may be reduced due to the difference in density of the injected gas.

In order to prevent the difference in gas density as described above, in the injection plate 180 applied to the present invention, as described above, the first region A corresponding to the outer portion of the injection plate 180 . The size of the injection plate holes 181 formed in the injection plate 180 is larger than the size of the injection plate holes 181 formed in the third region A corresponding to the central portion of the injection plate 180 .

Since the size of the injection plate holes 181 formed in the first area A is large, even if the amount of the gas diffused into the first area A is small compared to the third area C, , the amount of the gas injected through the injection plate holes 181 formed in the first region (A) is the amount of the gas injected through the injection plate holes 181 formed in the third region (C) may be the same as or similar to the amount of

Accordingly, the density of the gas in the portion corresponding to the first region A of the showerhead 120 and the density of the gas in the portion corresponding to the third region C may be uniform.

Accordingly, the thickness of the thin film deposited on the region corresponding to the first region A of the large-area substrate 200 disposed on the substrate support unit 190 corresponds to the thickness of the third region C The thickness of the thin film to be deposited on the area may be uniform.

In addition, in the second region (B), the injection plate hole 181 is smaller than the size of the injection plate hole formed in the first region (A) and larger than the size of the shower hole formed in the third region (C). are formed, the amount of gas injected through the injection plate holes 181 formed in the second region B is The amount of gas injected through the injection plate holes 181 may be the same as or similar to that of the gas.

In the above description, the present invention has been described as an example in which the size of the spray plate holes 181 is different for each of the first area A, the second area B, and the third area C. The size of the spray plate holes 181 may be sequentially increased from the central portion of the spray plate 180 to the outer direction of the spray plate 180 .

For example, in the spray plate 180 shown in FIG. 5 , the size of the spray plate holes 181 formed in the first area A are all the same, and are formed in the second area B. The sizes of the spray plate holes 181 are all the same, and the sizes of the spray plate holes 181 formed in the third region B are all the same.

However, in another embodiment of the present invention, the size of the injection plate holes 181 formed in the first region A may increase sequentially in the outer direction, and the second region B ), the size of the spray plate holes 181 formed in the outer direction may increase sequentially, and the size of the spray plate holes 181 formed in the third region C increases in the outer direction. , may be sequentially increased.

Second, the spacing between the injection plate holes 181 may be formed differently for each area of the injection plate 180 .

For example, as shown in FIG. 6 , the spacing between the injection plate holes 181 may be different for each area of the injection plate 180 . In this case, the size of the injection plate holes 181 may be identical to each other. The difference in spacing between the injection plate holes 181 means that the density of the injection plate holes 181 is different. The amount of gas injected from the area where the density of the injection plate holes 181 is high is greater than the amount of gas injected from the area where the density of the injection plate holes 181 is small.

When it is assumed that the spacing between the injection plate holes 181 formed in the first region A is the smallest, the spacing between the injection plate holes 181 formed in the third region C is formed to be the largest. In addition, the distance between the injection plate holes 181 formed in the second region B between the first region A and the third region C is the injection formed in the first region A. It may be formed to be larger than the spacing between the plate holes and smaller than the spacing between the spray plate holes formed in the third region (C). In detail, the density of the injection plate holes 181 formed in the first region (A) is the largest, and the density of the injection plate holes 181 formed in the third region (C) is the smallest. and the density of the injection plate holes 181 formed in the second region C may be medium.

For example, as shown in FIG. 4 , the gas introduced into the diffusion space 140 through the gas supply pipe 170 mounted at a position corresponding to the central portion of the injection plate 180 is It is diffused from the diffusion space 140 to the outer portion of the spray plate 180 . However, the amount of the gas diffused to the outer portion of the injection plate 180 is smaller than the amount of the gas diffused to the central portion of the injection plate 180 . In this case, the density of the gas injected through the injection plate holes 181 formed in the central portion of the injection plate 180 is determined by the injection plate hole 181 formed in the outer portion of the injection plate 180 . ) may be greater than the density of the gas injected through. The uniformity of the thickness of the thin film formed on the large-area substrate may be reduced due to the difference in density of the injected gas.

In order to prevent the difference in gas density as described above, in the injection plate 180 applied to the present invention, as described above, the first region A corresponding to the outer portion of the injection plate 180 . The spacing between the injection plate arcs 181 formed in the blast plate 180 is smaller than the spacing between the injection plate holes 181 formed in the third area A corresponding to the central portion of the injection plate 180 .

Since the distance between the injection plate holes 181 formed in the first region A is small, even if the amount of the gas diffused into the first region A is small compared to the third region C, , the amount of the gas injected through the injection plate holes 181 formed in the first region (A) is the amount of the gas injected through the injection plate holes 181 formed in the third region (C) may be the same as or similar to the amount of

Accordingly, the density of the gas in the portion corresponding to the first region A of the showerhead 120 and the density of the gas in the portion corresponding to the third region C may be uniform.

Accordingly, the thickness of the thin film deposited on the region corresponding to the first region A of the large-area substrate 200 disposed on the substrate support unit 190 corresponds to the thickness of the third region C The thickness of the thin film to be deposited on the area may be uniform.

In addition, in the second region (B), the spacing between the injection plate holes formed in the first region (A) is larger than the spacing between the injection plate holes formed in the third region (C). Since the injection plate holes 181 are formed, the amount of gas injected through the injection plate holes 181 formed in the second region B is increased in the first region A and the third region C. ) may be the same as or similar to the amount of gas injected through the

In the above description, the present invention has been described as an example in which the spacing of the spray plate holes 181 is different for each of the first area A, the second area B, and the third area C. The spacing between the injection plate holes 181 may be sequentially decreased while going from the central portion of the injection plate 180 to the outer direction of the injection plate 180 .

For example, in the showerhead 120 shown in FIG. 6 , the spacing between the spray plate holes 181 formed in the first area A is the same, and the showerhead 120 is formed in the second area B. All of the spacing of the injection plate holes 181 are the same, and the spacing of the injection plate holes 181 formed in the third region B are all the same.

However, in another embodiment of the present invention, the spacing between the injection plate holes 181 formed in the first region A may be sequentially decreased in the outer direction, and the second region B ) may be sequentially decreased as the distance between the spray plate holes 181 formed in the outer direction increases, and the distance between the spray plate holes 181 formed in the third region C is increased in the outer direction. , may be sequentially decreased.

Third, the size of the spray plate holes 181 and the spacing between the spray plate holes 181 may be formed differently for each area of the spray plate 180 .

For example, as shown in FIG. 4 , in the injection plate holes 181 , the size of the injection plate holes 181 increases in the outer direction of the injection plate 180 , and The gap may be formed so that it becomes smaller toward the outer direction of the spray plate 180 .

In more detail, the injection plate holes 181 may be formed in a form in which the form shown in FIG. 5 and the form shown in FIG. 6 are mixed.

Fourth, each of the regions may be formed in a circle or a rectangle.

For example, the regions dividing the size of the injection plate holes 181 or the spacing between the injection plate holes 181 may be formed in a rectangular shape as shown in FIGS. 5 and 6 . However, when the large-area substrate is a circular wafer used in a semiconductor manufacturing process, the regions may be formed in a circular shape identical to the shape of the wafer.

Fifth, each of the regions may be divided into at least two or more.

For example, in FIGS. 5 and 6 , the spray plate 180 divided into three regions is illustrated.

In this case, for each of the first area A, the second area B, and the third area C, at least one of the size of the spray plate hole 181 and the spacing between the spray plate holes 181 is may be different.

However, the region may be divided into two, or may be divided into four or more.

In particular, when the injection plate holes 181 are formed in a form in which the size of the injection plate holes 181 and the spacing between the injection plate holes 181 are sequentially increased or decreased, the area can be formed very much. .

Sixth, each of the regions may be divided into a first region formed in the outer portion of the spray plate and a second region to an n-th region formed in a central portion of the showerhead.

That is, in FIGS. 5 and 6 , the first region formed in the outer portion of the injection plate, the second region formed in the central portion of the injection plate, and the third (=n) region are divided. A spray plate 180 is shown.

In detail, since the density of the gas is generally different between the central portion and the outer portion of the injection plate, the regions may be formed in a direction from the central portion of the injection plate to the outer portion. Accordingly, control of the density of the gas can be made more easily.

As the number of regions increases, the density of the gas can be controlled more precisely.

Seventh, among the first to n-th regions, an m-th region (m is a natural number less than n) surrounds the m+1-th region.

For example, the first (=m) area (A) shown in FIGS. 5 and 6 surrounds the periphery of the second (=m+1) area (B), and the second (=m) area (=m) The region B surrounds the periphery of the third (=m+1) region C.

In general, as the density of the gas changes in a circular shape around the gas supply pipe 170, any one area may be formed to surround another area or to be surrounded by another area. have.

However, the shape of the region may be variously formed according to the type of the gas, the mobility of the gas, the distribution of the gas, and the like.

Eighth, in the above, the regions A, B, and C are formed from the central portion (or outer portion) of the spray plate to the outer portion (or central portion) of the spray plate, and The injection plate 180 in which the regions are formed in a form in which the region surrounds the central region has been described.

However, in the spray plate 180 , the regions may be sequentially formed from one direction to the other direction of the spray plate 180 .

For example, a first region is formed on the left side of the injection plate 180 , a third region is formed on the right side of the injection plate 180 , and a second region is formed between the first region and the second region. can be formed in

As described above, the size and spacing of the injection plate holes 181 may be formed in various shapes so that the uniformity of the thin film formed on the large-area substrate can be optimized.

In this case, the shape of the injection plate holes 181 may also be changed. For example, in FIGS. 4 to 6 , the injection plate hole 121 is formed in a circular shape, but the injection plate hole 181 may be formed in a rectangular shape, a hexagonal shape, or other various shapes. it might be

In addition, the shape of the injection plate holes 181 may be set in consideration of mobility according to the type of the gas.

According to the present invention as described above, the uniformity of the thickness of the thin film formed on the large-area substrate can be improved.

Those skilled in the art to which the present invention pertains will understand that the present invention may be embodied in other specific forms without changing the technical spirit or essential characteristics thereof. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The scope of the present invention is indicated by the following claims rather than the above detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present invention. do.

110: chamber 120: shower head
130: connection unit 140: diffusion space
150: support 160: diffuser cover
170: gas supply pipe 180: injection plate
190: substrate support 200: large area substrate
300: chamber bolt

Claims (5)

a chamber having a reaction space;
a substrate support for supporting a large-area substrate;
a diffuser cover mounted on the upper end of the substrate support inside the chamber and receiving a gas to be deposited on the large-area substrate through a gas supply pipe;
a showerhead having a plurality of shower holes and mounted on a lower end of the diffuser cover to spray the gas toward the substrate support through the shower holes;
It is disposed between the upper end of the showerhead and the lower end of the diffuser cover, is mounted on the lower end of the diffuser cover, and primarily injects the gas directly injected from the gas supply pipe connected to the diffuser cover in the upper direction of the showerhead. an injection plate having a plurality of injection plate holes for;
a support part mounted on a side surface of the chamber to couple the diffuser cover to the chamber and support a lower surface of the diffuser cover; and
and a chamber bolt mounted on the central portion of the diffuser cover rather than the support portion to couple the diffuser cover to the chamber,
The chamber bolt is coupled to the upper surface of the diffuser cover through the chamber from the outer edge of the upper surface of the chamber,
The showerhead is disposed between the lower end of the spray plate and the upper end of the substrate support to secondarily spray the gas injected from the spray plate in the direction of the substrate support,
The shower holes of the shower head are formed at regular intervals and the same size,
The size of the injection plate holes disposed on the injection plate is the same,
The spray plate includes a first area corresponding to the outer region of the spray plate, a third area corresponding to the central portion of the spray plate, and a second area positioned between the first area and the third area, ,
Arrangements of the plurality of injection plate holes disposed in the first to third regions of the injection plate are different from each other,
The spacing between the injection plate holes formed in the first region of the injection plate is the smallest, and the spacing between the injection plate holes formed in the third region is the largest. delete delete delete The method of claim 1,
The third area is a large-area substrate processing apparatus overlapping the central portion of the shower head.

Images