KR102331779B1 - Apparatus for injection gas and apparatus for processing substrate including the same - Google Patents

Abstract

The present invention provides a body including a plurality of gas flow passages connected to a plurality of gas injection holes for injecting a process gas; a first gas injection module coupled to one side of the body to inject a first process gas into only some of the plurality of gas flow passages; and a second gas injection module coupled to the other side of the body opposite to one side of the body to inject a second process gas into only the remaining gas flow paths among the plurality of gas flow paths; and the same. It relates to a substrate processing apparatus.

Description

A gas injection apparatus and a substrate processing apparatus including the same

The present invention relates to a gas injection apparatus and a substrate processing apparatus including the same.

In general, in order to manufacture semiconductor devices, flat panel displays, and solar cells, a predetermined thin film layer must be formed on the surface of a substrate. A semiconductor manufacturing process, such as a photo process for selectively exposing a thin film using a semiconductor device, and an etching process for forming a pattern by removing the thin film from the selectively exposed portion are performed.

Such a semiconductor manufacturing process is performed inside a substrate processing apparatus designed in an optimal environment for the process, and recently, a substrate processing apparatus that performs a deposition or etching process using plasma has been widely used.

A substrate processing apparatus, such as plasma enhanced chemical vapor deposition, utilizes a gas injection apparatus to introduce a gas into a chamber.

The gas injection device serves to inject various process gases to the surface of the substrate through a plurality of gas injection holes formed in the plate-shaped body. As a material of such a gas injection device, aluminum is generally used in consideration of processability and reactivity with a process gas.

The conventional gas injection device, as shown in FIG. 1, is a plate-shaped body 10, perforated at regular intervals in the body 10 along one direction of the body 10 by machining such as a drill. After that, a plurality of gas passages 20, both ends of which are sealed by welding 22, and a plurality of gas injections perforated perpendicular to the lower surface of the body 10 so as to be connected to each of the plurality of gas passages 20 It includes a hole 30 . In this conventional gas injection device, the process gas injected into the center of each of the plurality of gas passages 20 through the gas supply pipe 40 is downwardly injected through the plurality of gas injection holes 30 .

In such a conventional gas injection device, the process gas is injected into each of the plurality of gas passages 20 , and thus, it is difficult to uniformly inject the process gas into the plurality of gas passages 20 . In addition, in the conventional gas injection device, both ends of each of the plurality of gas flow passages 20 are permanently sealed by welding, thereby making it difficult to clean the gas flow passages 20 and the gas injection hole 30 .

The present invention has been made to solve the above-described problems, and it provides a gas injection device capable of uniformly injecting a process gas into a plurality of gas flow passages communicating with a plurality of gas injection holes, and a substrate processing apparatus including the same make it a technical task.

Another technical object of the present invention is to provide a gas injection device capable of facilitating cleaning of a plurality of gas injection holes and a plurality of gas flow passages, and a substrate processing apparatus including the same.

In addition to the technical problems of the present invention mentioned above, other features and advantages of the present invention will be described below or will be clearly understood by those skilled in the art from such description and description.

According to an aspect of the present invention, there is provided a gas injection device comprising: a body including a plurality of gas flow passages connected to a plurality of gas injection holes for injecting a process gas; and at least one gas injection module coupled to at least one side surface of the body and communicating with each of the plurality of gas passages, wherein the gas injection module is a first gas for first buffering the process gas supplied from the outside buffering space; and a second gas buffering space communicating with the first gas buffering space to secondarily buffer the firstly buffered process gas and inject it into the plurality of gas passages.

The gas injection module may include: a first gas buffering member formed to have the first gas buffering space communicating with at least one gas supply pipe and coupled to one side of the body; and a second gas buffering member formed to have the second gas buffering space communicating with the plurality of gas flow passages while communicating with the first gas buffering space and installed in the first gas buffering space.

The gas injection module further includes a gas injection member coupled to a side surface of the body so as to cover each of the plurality of gas flow paths that are disposed inside the second gas buffering member and communicate with the second gas buffering space, A plurality of gas injection holes are formed in the gas injection member to inject the process gas that is secondarily buffered in the second gas buffering space into each of the plurality of gas passages.

The plurality of gas flow passages are divided into a plurality of gas flow passage groups including two or more adjacent gas flow passages, and the second gas buffering member buffers the process gas supplied from the first gas buffering space to the plurality of gas passages. It may include a plurality of group buffering members injected into the respective gas flow passages of the flow path group.

The gas injection module includes: a first gas injection module coupled to one side of the body and including the first and second gas buffering spaces for injecting a first process gas into only some of the plurality of gas flow passages; and the first and first process gases coupled to the other side surface of the body opposite to one side surface of the body for injecting a second process gas that is the same as or different from the first process gas only into the remaining gas passages among the plurality of gas passages. It may be configured to include a second gas injection module including two gas buffering spaces.

One side of each of the partial gas flow paths among the plurality of gas flow paths communicates with the second gas buffering space of the first gas injection module, the other side of each of the partial gas flow paths is closed, and the remaining gas of the plurality of gas flow paths is closed. The other side of each of the flow paths may be in communication with the second gas buffering space of the second gas injection module, and one side of each of the remaining gas flow paths may be closed.

The first gas injection module may include a first gas injection having a plurality of first gas injection holes for injecting a first process gas that is secondarily buffered in the second gas buffering space into only some of the plurality of gas flow passages. The second gas injection module further includes a member, wherein the second gas injection module includes a plurality of second gas injection holes for injecting a second process gas that is secondarily buffered in the second gas buffering space to only the remaining gas passages among the plurality of gas passages. It may be configured to further include a second gas injection member having a.

The plurality of gas passages may include: a plurality of first gas passages formed at regular intervals to be parallel to the first longitudinal direction of the body; and a plurality of second gas passages spaced apart from the plurality of first gas passages in the thickness direction of the body and formed at regular intervals to be parallel to a second longitudinal direction intersecting the first longitudinal direction of the body. have.

The gas injection module includes: a first gas injection module coupled to a first side surface of the body and including the first and second gas buffering spaces for injecting a first process gas to one side of a plurality of first gas passages; A second gas injection coupled to a second side surface of the body opposite to the first side surface and including the first and second gas buffering spaces for injecting the first process gas to the other side of the plurality of first gas passages module; A third gas coupled to a third side surface of the body and including the first and second gas buffering spaces for injecting a second process gas that is the same as or different from the first process gas to one side of a plurality of second gas passages injection module; and a fourth gas coupled to a fourth side surface of the body opposite to the third side surface and including the first and second gas buffering spaces for injecting the second process gas to the other side of the plurality of second gas passages. It may comprise an injection module. Here, each of the first to fourth gas injection modules further includes a gas injection member having a plurality of gas injection holes for injecting a corresponding process gas that is secondarily buffered in the second gas buffering space into a corresponding gas flow path. can be configured.

The gas injection module is coupled to a first side surface of the body and includes the first and second gas buffering spaces for injecting a first process gas into only some of the first gas passages among a plurality of first gas passages. 1 gas injection module; The first is coupled to a second side surface of the body opposite to the first side to inject a second process gas that is the same as or different from the first process gas only to the remaining second gas flow passages among the plurality of first gas flow passages. and a second gas injection module including a second gas buffering space; The first and second gas buffering spaces coupled to the third side surface of the body for injecting a third process gas that is the same as or different from the second process gas only to some second gas passages of a plurality of second gas passages A third gas injection module comprising; and a fourth process gas coupled to a fourth side surface of the body opposite to the third side surface for injecting a fourth process gas that is the same as or different from the third process gas only to the remaining second gas passages among a plurality of second gas passages. It may be configured to include a fourth gas injection module including the first and second gas buffering spaces. Here, each of the first to fourth gas injection modules further includes a gas injection member having a plurality of gas injection holes for injecting a corresponding process gas that is secondarily buffered in the second gas buffering space into a corresponding gas flow path. can be configured.

A substrate processing apparatus according to the present invention for achieving the above technical problem is a process chamber; a chamber lid covering an upper portion of the process chamber; a substrate support means installed inside the process chamber to support a substrate; and a gas ejecting means coupled to a lower surface of the chamber lid to face the substrate supporting means, wherein the gas ejecting means may include the gas ejecting device.

A gas injection device according to the present invention includes: a body including a plurality of gas flow passages connected to a plurality of gas injection holes for injecting a process gas; a first gas injection module coupled to one side of the body to inject a first process gas into only some of the plurality of gas flow passages; and a second gas injection module coupled to the other side of the body opposite to one side of the body to inject a second process gas into only the remaining gas flow paths among the plurality of gas flow paths.

A substrate processing apparatus according to the present invention includes a process chamber; a chamber lid covering an upper portion of the process chamber; a substrate support means installed inside the process chamber to support a substrate; and a gas injection unit coupled to a lower surface of the chamber lid to face the substrate supporting unit. The gas injection means may include: a body including a plurality of gas passages connected to a plurality of gas injection holes for injecting a process gas; a first gas injection module coupled to one side of the body to inject a first process gas into only some of the plurality of gas flow passages; and a second gas injection module coupled to the other side of the body opposite to one side of the body to inject a second process gas into only the remaining gas flow paths among the plurality of gas flow paths.
A gas injection device according to the present invention includes: a body including a plurality of gas flow passages connected to a plurality of gas injection holes for injecting a process gas; a first gas injection module coupled to one side of the body to inject a first process gas into only some of the plurality of gas flow passages; and a second gas injection module coupled to the other side of the body opposite to one side of the body to inject a second process gas into only the remaining gas flow paths among the plurality of gas flow paths. The first gas injection module may include a first gas injection member coupled to one side of the body. The second gas injection module may include a second gas injection member coupled to the other side of the body. Some of the gas flow paths of the plurality of gas flow paths may have one side communicating with the first gas injection module through a plurality of gas injection holes formed in the first gas injection member, and the other side being closed by the second gas injection member. can One side of the remaining gas flow paths among the plurality of gas flow paths is closed by the first gas injection member, and the other side communicates with the second gas injection module through a plurality of gas injection holes formed in the second gas injection member. can
A gas injection device according to the present invention includes: a body including a plurality of gas flow passages connected to a plurality of gas injection holes for injecting a process gas; a first gas injection module coupled to one side of the body to inject a first process gas into only some of the plurality of gas flow passages; and a second gas injection module coupled to the other side of the body opposite to one side of the body to inject a second process gas into only the remaining gas flow paths among the plurality of gas flow paths. Among the plurality of gas flow paths, one side of some of the gas flow paths may communicate with the first gas injection module and the other side may be closed by a sealing cap. One side of the remaining gas flow paths among the plurality of gas flow paths may be closed by a sealing cap, and the other side may communicate with the second gas injection module.

According to the means for solving the above problems, according to the present invention, the process gas can be uniformly injected into the plurality of gas passages, and it is possible to easily clean each of the plurality of gas passages and the plurality of gas injection holes. In addition, the present invention has an effect that the process gas can be uniformly sprayed on the substrate, thereby enabling a uniform substrate processing process.

1 is a cross-sectional view schematically showing a conventional gas injection device.
2 is a rear perspective view schematically showing a gas injection device according to a first example of the present invention.
FIG. 3 is a vertical cross-sectional view taken along line II′ shown in FIG. 2 .
FIG. 4 is a horizontal cross-sectional view taken along line II-II' shown in FIG. 2 .
FIG. 5 is a cross-sectional view illustrating a plurality of communication holes illustrated in FIG. 4 .
6 is a diagram schematically illustrating a flow of a process gas in the gas injection device according to the first example of the present invention.
7 is a view for explaining a gas injection device according to a second example of the present invention.
FIG. 8 is a cross-sectional view illustrating the gas injection hole shown in FIG. 7 .
9 is a view for explaining a modified example of the gas injection device according to the second example of the present invention.
10 is a view for explaining a gas injection device according to a third example of the present invention.
11 is a view for explaining a gas injection device according to a fourth example of the present invention.
12 is a view for explaining a modified example of the gas injection device according to the fourth example of the present invention.
13 is a rear perspective view schematically showing a gas injection device according to a fifth example of the present invention.
14 is a vertical cross-sectional view taken along line III-III' shown in FIG. 13 .
15 is a horizontal cross-sectional view taken along line IV-IV' shown in FIG. 13 .
16 is a cross-sectional view schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.

The meaning of the terms described herein should be understood as follows.

The singular expression is to be understood as including the plural expression unless the context clearly defines otherwise, and the terms "first", "second", etc. are used to distinguish one element from another, The scope of rights should not be limited by these terms.

It should be understood that terms such as “comprise” or “have” do not preclude the possibility of addition or existence of one or more other features or numbers, steps, operations, components, parts, or combinations thereof.

The term “at least one” should be understood to include all possible combinations from one or more related items. For example, the meaning of "at least one of the first, second, and third items" means 2 of the first, second, and third items as well as each of the first, second, or third items. It means a combination of all items that can be presented from more than one.

The term “on” is meant to include not only cases in which a component is formed directly on top of another component, but also a case in which a third component is interposed between these components.

Hereinafter, a preferred example of a gas injection apparatus and a substrate processing apparatus including the same according to the present invention will be described in detail with reference to the accompanying drawings.

2 is a rear perspective view schematically showing a gas injection device according to a first example of the present invention, FIG. 3 is a vertical cross-sectional view taken along line II' shown in FIG. 2, and FIG. 4 is a line II-II' shown in FIG. It is a horizontal cross section.

2 to 4, the gas injection device 100 according to the first example of the present invention is configured to include a body 110, and first and second gas injection modules (120a, 120b).

The body 110 may be formed of a flat metal material having a certain thickness, for example, aluminum or an aluminum alloy. The body 110 is detachably mounted on the lower surface of the chamber lid covering the upper part of the process chamber (not shown) so as to face the substrate support means (not shown) installed on the bottom surface of the process chamber. do.

A plurality of gas passages 111 and a plurality of gas injection holes 113 are formed in the body 110 .

Each of the plurality of gas flow paths 111 is formed inside the body 110 to have a constant interval while parallel to the horizontal direction (X) or the vertical direction (Y) of the body 110 . For example, each of the plurality of gas flow paths 111 may be formed by being perforated to penetrate one side and the other side of the body 110 by a gun drill process. Process gases are injected into the plurality of gas passages 111 from the first and second gas injection modules 120a and 120b.

Each of the plurality of gas injection holes 113 is formed vertically from the rear surface of the body 110 to have a predetermined interval, and communicates with each of the plurality of gas passages 111 . Each of the plurality of gas injection holes 113 downwardly injects the process gas injected into the plurality of gas passages 111 at a constant pressure. Each of the plurality of gas injection holes 113 may include one or more injection holes to be optimized for at least one of an injection area, an injection angle, and an injection amount of the process gas. For example, each of the plurality of gas injection holes 113 according to an example may be formed in a cylindrical shape having a diameter smaller than that of the gas flow path 111 . Although not shown, the plurality of gas injection holes 113 according to another example are in a so-called funnel shape, that is, a first injection hole of a first diameter communicating with the gas flow path 111 and a first injection hole communicating with the first injection hole from the body It may include a second injection hole whose diameter increases toward the rear surface of 110 . Each of the plurality of gas injection holes 113 according to another example, although not shown, includes a first injection hole of a first diameter communicating with the gas flow path 111 , and a second diameter smaller than the first diameter while communicating with the first injection hole It may include a second injection hole having a, and a third injection hole communicating with the second injection hole and increasing in diameter from the first injection hole to the rear surface of the body 110 .

The first gas injection module 120a is coupled to one side of the body 110 and injects a process gas supplied through at least one first gas supply pipe 130a into each of the plurality of gas flow paths 111 . . The first gas injection module 120a according to an example is supplied from a first gas buffering space GBS1 that primarily buffers the process gas supplied from the first gas supply pipe 130a and the first gas buffering space GBS1. A second gas buffering space GBS2 for secondary buffering of the used process gas and injecting it into one side of each of the plurality of gas flow paths 111 may be included. For example, the first gas injection module 120a may include a first gas buffering member 121 having a first gas buffering space GBS1 , and a second gas buffering member 123 having a second gas buffering space GBS2 . ) can be included.

The first gas buffering member 121 is formed to include a first gas buffering space GBS1 that primarily buffers the process gas supplied through the first gas supply pipe 130a, and includes a plurality of gas flow paths 111 . It is coupled to one side of the body 110 so as to cover one side of each. For example, the first gas buffering member 121 faces the plurality of gas flow paths 111 to include an outer surface and a first gas buffering space GBS1 surrounded by respective sidewalls perpendicular to the outer surface. It may be formed in the form of a box with an open side. Accordingly, the first gas buffering member 121 primarily buffers or diffuses the process gas supplied through the first gas supply pipe 130a in the first gas buffering space GBS1 .

A gas supply hole 120h communicating with the first gas supply pipe 130a is formed on a side surface, for example, an upper surface, of the first gas buffering member 121 . In this case, a sealing member may be interposed between the upper surface of the first gas buffering member 121 and the first gas supply pipe 130a. Additionally, the coupling portion between the first gas supply pipe 130a and the gas supply hole 120h may be sealed by a sealing jacket 131 . Here, two or more first gas supply pipes 130a may be installed in the first gas buffering member 121 , and in this case, each of the two or more first gas supply pipes 130a is individually provided with a gas supply means (not shown). city) or a branch pipe branching from one main supply pipe connected to the gas supply means.

A sealing member 125 is interposed between each sidewall of the first gas buffering member 121 and one side of the body 110 . Here, the sealing member 125 may be formed of an O-ring or a pad made of a material that is not damaged by the process gas.

The second gas buffering member 123 buffers the process gas primarily buffered in the first gas buffering space GBS1 of the first gas buffering member 121 secondarily and injects it into the plurality of gas flow paths 111 . One side of the body 110 is formed to include a second gas buffering space GBS2 for is coupled to For example, the second gas buffering member 123 is a box having an inner surface facing the plurality of gas flow passages 111 to include an outer surface and a second gas buffering space GBS2 surrounded by respective sidewalls. can be formed in the form. Here, the second gas buffering space GBS2 according to an example may have the same area as the first gas buffering space GBS1 . The second gas buffering space GBS2 according to another example may be formed to have a relatively smaller area than the first gas buffering space GBS1 because it receives the first buffered process gas from the first gas buffering space GBS1. In this case, the width of the first gas injection module 120a may be reduced.

A plurality of communication holes formed at regular intervals on the outer surface of the second gas buffering member 123 , that is, on the surface opposite to the outer surface of the first gas buffering member 121 to communicate with the first gas buffering space GBS1 . (123h) is formed. The plurality of communication holes 123h form a flow path through which the process gas buffered and diffused in the first gas buffering space GBS1 is supplied to the second gas buffering space GBS2 . The plurality of communication holes 123h are formed by injecting the process gas whose pressure is lowered by the primary diffusion in the first gas buffering space GBS1 to the second gas buffering space GBS2 at a constant pressure, so that the primary diffusion process gas is formed. The secondary diffusion is more smoothly performed in the second gas buffering space GBS2.

According to an example, the plurality of communication holes 123h may be formed on the outer surface of the second gas buffering member 123 to have a predetermined interval and a predetermined diameter (or size).

As shown in (a) of FIG. 5 , the diameters D1 , D2 , and D3 of each of the plurality of communication holes 123h according to another example are, in consideration of the flow distance of the process gas, the second gas buffering member It may increase toward both ends (or both ends of the body 110 based on the longitudinal direction of one side of the body 110) from the center based on the outer surface of the 123 . In this case, the process gas supplied from the first gas buffering space GBS1 to the second gas buffering space GBS2 may be more uniformly buffered or diffused.

As shown in (b) of FIG. 5 , each of the plurality of communication holes 123h according to another example has the same diameter as each other, and the intervals S1 and S2 between the centers of the adjacent communication holes 123h are, In consideration of the gas flow distance, the second gas buffering member 123 may become narrower toward both ends from the center with respect to the outer surface of the gas buffering member 123 . Even in this case, the process gas supplied from the first gas buffering space GBS1 to the second gas buffering space GBS2 may be buffered or diffused more uniformly. Additionally, although not shown, in consideration of the flow distance of the process gas, the diameters D1 and D2 of each of the plurality of communication holes 123h are increased from the center to both ends based on the outer surface of the second gas buffering member 123 . , D3 may increase, and spacing S1 and S2 between centers of adjacent communication holes 123h may be formed to become narrower.

The second gas injection module 120b is coupled to the other side of the body 110 opposite to one side of the body 110 to supply the plurality of process gases supplied through at least one second gas supply pipe 130b. is injected into each of the gas flow paths 111 of The second gas injection module 120b according to an example is supplied from a first gas buffering space GBS1 that primarily buffers the process gas supplied from the second gas supply pipe 130b and the first gas buffering space GBS1. A second gas buffering space GBS2 for secondary buffering of the used process gas and injecting it into the plurality of gas passages 111 may be included. For example, the first gas injection module 120a may include a first gas buffering member 121 having a first gas buffering space GBS1 , and a second gas buffering member 123 having a second gas buffering space GBS2 . ) can be included. As described above, the second gas injection module 120b injects the above-described first gas except for injecting the process gas supplied from the second gas supply pipe 130b to the other side of each of the plurality of gas passages 111 . Since it is the same as the module 120a, the same reference numerals are assigned to the same components, and a description thereof will be omitted.

6 is a diagram schematically illustrating a flow of a process gas in the gas injection device according to the first example of the present invention.

As can be seen from FIG. 6 , in the gas injection device according to the first example of the present invention, the process gas PG supplied to the first and second gas supply pipes 130a and 130b is the first and second gas injection modules. The first buffered and diffused process gas in the first gas buffering space GBS1 of 120a and 120b passes through the communication hole 123h of the first and second gas injection modules 120a and 120b. It is supplied to the second gas buffering space GBS2 through the second gas buffering space GBS2 and is injected into the plurality of gas flow passages 111 while being secondary buffered and diffused in the second gas buffering space GBS2 . Then, the process gas injected into the plurality of gas passages 111 is injected downward through the plurality of gas injection holes 113 while being tertiarily buffered and diffused in the plurality of gas passages 111 .

Meanwhile, in the above description, the process gas is buffered in each of the first and second gas injection modules 120a and 120b and injected into both sides of the plurality of gas passages 111 , which are respectively to the plurality of gas passages 111 . Although it is more preferable for uniform injection of the process gas, the present invention is not limited thereto, and the second gas injection module 120b may be omitted. In this case, the other ends of the plurality of gas flow paths 111 are not permanently closed by welding or the like, but may be closed by a detachable sealing cap to facilitate cleaning.

As described above, according to the gas injection device according to the first example of the present invention, gas is disposed on one side and the other side of the body 110 in which the plurality of gas flow paths 111 and the plurality of gas injection holes 113 are formed. The injection modules 120a and 120b are detachably coupled, and the process gas in the gas injection modules 120a and 120b communicates with the plurality of gas injection holes 113 through primary and secondary buffering. By being injected into the flow path 111 , the process gas can be uniformly injected into the plurality of gas flow paths 111 , and the plurality of gas flow paths 111 and the plurality of gas injection holes are separated through the separation of the gas injection modules 120a and 120b. (113) Each cleaning can be facilitated.

FIG. 7 is a view for explaining a gas injection device according to a second example of the present invention, which additionally includes a gas injection member in each of the first and second gas injection modules illustrated in FIGS. 1 to 4 . Accordingly, in the following description, only the gas injection member will be described.

First, the first gas injection member 127a of the first gas injection module 120a applies the process gas secondarily diffused in the above-described second gas buffering space GBS2 to one side of the plurality of gas flow paths 111 uniformly. Inject (or spray) with pressure. To this end, the first gas injection member 127a is formed in the form of a plate having a constant thickness and is coupled to one side of the body 111 to cover one side of each of the plurality of gas passages 111 . The first gas injection member 127a is formed to overlap each of the plurality of gas passages 111 on a one-to-one basis so that the process gas that is secondarily buffered in the second gas buffering space GBS2 is supplied to each of the plurality of gas passages 111 . A plurality of gas injection holes 127h for injection at a constant pressure are formed on one side.

Each of the plurality of gas injection holes 127h may have a diameter and/or a cross-sectional shape for increasing the pressure of the process gas injected into the plurality of gas passages 111 in the second gas buffering space GBS2 . For example, each of the plurality of gas injection holes 127h may be formed to have a relatively smaller diameter than that of the gas flow path 111 .

Additionally, in consideration of the flow of the second buffered process gas in the second gas buffering space GBS2, a uniform process gas may be injected into each of the plurality of gas flow paths 111, as shown in FIG. 8 , The diameters (or sizes) D1 to D5 of each of the plurality of gas injection holes 127h may increase from the center to both ends of the body 110 in the longitudinal direction of one side of the body 110 .

A sealing member (not shown) is disposed between one side of the body 110 and the first gas injection member 127a except for the periphery of one side of each of the plurality of gas flow passages 111 and the periphery of the plurality of gas injection holes 127h. is preferably interposed.

The second gas injection member 127b of the second gas injection module 120b applies the process gas that is secondarily diffused in the above-described second gas buffering space GBS2 to the other side of the plurality of gas passages 111 at a constant pressure. Inject (or spray). To this end, the second gas injection member 127b is formed in a plate shape having a predetermined thickness and is coupled to the other side surface of the body 111 to cover the other side of each of the plurality of gas flow paths 111 . The second gas injection member 127b is formed to overlap each of the plurality of gas flow paths 111 on a one-to-one basis so that the process gas that is secondarily buffered in the second gas buffering space GBS2 is supplied to each of the plurality of gas flow paths 111 . A plurality of gas injection holes 127h for injection at a constant pressure are formed on the other side. Since each of the plurality of gas injection holes 127h is the same as the first gas injection member 127a, the same reference numerals are given, and a description thereof will be omitted.

A sealing member (not shown) is disposed between the second side surface of the body 110 and the second gas injection member 127b except for the periphery of the other side of each of the plurality of gas flow passages 111 and the periphery of the plurality of gas injection holes 127h. is preferably interposed.

Meanwhile, as shown in FIG. 9 , the first gas injection member 127a described above may be inserted and coupled to the first insertion groove 115a concave to a predetermined depth on one side of the body 110 . At this time, it is preferable that the first gas injection member 127a does not protrude to the outside of one side of the body 110 . Likewise, the above-described second gas injection member 127b may be inserted and coupled to the second insertion groove 115b concave to a predetermined depth on the other side of the body 110 . At this time, it is preferable that the second gas injection member 127b does not protrude to the outside of the other side of the body 110 . As described above, when the first and second gas injection members 127a and 127b are inserted into one side and the other side of the body 110, respectively, the first and second gas buffering members 121 and 123 and the body Sealing between the 110 may be easy.

As described above, the gas injection device 200 according to the third example of the present invention provides the same effect as the gas injection device 100 of the first example of the present invention described above, but is produced through the gas injection members 127a and 127b. By increasing the pressure of the process gas injected into each of the plurality of gas passages 111 from the second gas buffering space GBS2 , the process gas may be more uniformly injected into the plurality of gas passages 111 .

10 is a view for explaining a gas injection device according to a third example of the present invention, which changes the structure of the second gas buffering member in each of the first and second gas injection modules shown in FIGS. 1 to 4 ; It is composed by Accordingly, in the following description, only the second gas buffering member will be described.

First, the plurality of gas passages 111 formed in the body 110 are divided into a plurality of gas passage groups GPG1 and GPG2 including two or more adjacent gas passages. For example, when ten gas passages 111 are formed in the body 110 , the ten gas passages 111 are grouped into five adjacent first and second gas passage groups GPG1 and GPG2 . ) can be divided into

The second gas buffering member 123 of each of the above-described first and second gas injection modules 120a and 120b secondary buffers the process gas supplied from the first gas buffering space GBS1 to a plurality of gas flow paths. The group GPG1 and GPG2 may include a plurality of group buffering members 123a and 123b injected into the respective gas passages.

Each of the plurality of group buffering members 123a and 123b buffers the process gas first buffered in the first gas buffering space GBS1 secondarily, and the gas flow path 111 is grouped in the corresponding gas flow path group GPG1 and GPG2. It is configured to include a second gas buffering space GBS2 and at least one communication hole 123h for commonly injecting a process gas into the Since it is the same as the second gas buffering member 123 shown in FIGS. 1 to 4 , the same reference numerals will be given, and a description thereof will be omitted.

As described above, the gas injection device 300 according to the third example of the present invention provides the same effect as the gas injection device 100 of the first example of the present invention described above, but includes a plurality of second gas buffering spaces GBS2. By dividing and injecting the process gas injected into each of the plurality of gas flow paths 111 through each divided region, the process gas may be more uniformly injected into the plurality of gas flow paths 111 .

On the other hand, the gas injection device 300 according to the third example of the present invention is disposed inside each of the plurality of group buffering members 123a and 123b and a body 111 corresponding to each of the plurality of gas flow path groups GPG1 and GPG2. ) may be configured to further include a gas injection member (not shown) coupled to each of one side and the other side. Here, since the gas injection member is the same as the gas injection member 127a and 127b shown in FIGS. 8 to 10 , a description thereof will be omitted.

11 is a view for explaining a gas injection device according to a fourth example of the present invention, which is a modified process gas supplied to the plurality of gas flow paths shown in FIGS. 1 to 4 . Accordingly, in the following description, only the plurality of gas passages and the process gas will be described.

First, some of the gas flow paths 111o among the plurality of gas flow paths 111 formed in the body 110, for example, one side of the odd-numbered gas flow path 111o is the first of the first gas injection module 120a described above. It communicates with the second gas buffering space GBS2 , and the other side of the odd-numbered gas flow path 111o is closed by a separable sealing cap 140 . The first process gas PG1 is injected into the odd-numbered gas flow path 111o through the primary and secondary buffering of the first gas injection module 120a described above.

On the contrary, the other side of the remaining gas flow path 111e, for example, the even-numbered gas flow path 111e, among the plurality of gas flow paths 111 formed in the body 110 is the second gas injection module 120b. It communicates with the second gas buffering space GBS2 , and one side of the even-numbered gas flow path 111e is closed by a detachable sealing cap 140 . A second process gas PG2 that is the same as or different from the first process gas PG1 is injected into the even-numbered gas flow path 111e through the primary and secondary buffering of the above-described second gas injection module 120b. .

Meanwhile, in the gas injection device 400 according to the fourth example of the present invention, the other side of the partial gas flow path 111o and one side of the remaining gas flow path 111e among the plurality of gas flow paths 111 are respectively sealed with a sealing cap 140 . ), but not limited thereto, and as shown in FIG. 12 , some of the gas flow paths 111o of the plurality of gas flow paths 111 through each of the first and second gas injection members 127a and 127b ) and one side of the remaining gas flow path 111e may be closed.

Specifically, the first gas injection member 127a is coupled to one side of the body 110 to cover one side of the plurality of gas flow paths 111 , and some gas flow paths 111o among the plurality of gas flow paths 111 . and a plurality of gas injection holes 127h formed to overlap only one side of the . Accordingly, one side of some of the gas flow paths 111 of the plurality of gas flow paths 111 communicates with the second gas buffering space GBS2 of the first gas injection module 120a through the plurality of gas injection holes 127h. On the other hand, one side of the remaining gas flow path 111e is closed by the first gas injection member 127a.

Conversely, the second gas injection member 127b is coupled to the other side surface of the body 110 to cover the other side of the plurality of gas flow paths 111 , and the remaining gas flow paths 111e among the plurality of gas flow paths 111 . and a plurality of gas injection holes 127h formed to overlap only the other side of the . Accordingly, the other side of some gas flow paths 111e among the plurality of gas flow paths 111 is closed by the first gas injection member 127a, while the other side of the remaining gas flow paths 111e has a plurality of gas injection holes. It communicates with the second gas buffering space GBS2 of the second gas injection module 120b through 127h.

As described above, in the gas injection apparatus 400 according to the fourth example of the present invention, when the first and second process gases PG1 and PG2 are the same, some gas passages 111o among the plurality of gas passages 111 . ) and the remaining gas passages 111e, since the process gases PG1 and PG2 are injected in opposite directions to each other, the process gases may be more uniformly injected into the plurality of gas passages 111 .

In addition, even when the gas injection apparatus 400 according to the fourth example of the present invention injects different first and second process gases PG1 and PG2 , some gas passages 111o among the plurality of gas passages 111 . ) and the remaining gas flow paths 111e are spatially separated from each other, so that the first and second process gases PG1 and PG2 are fundamentally prevented from being mixed in the body 110, while the first and second different The process gases PG1 and PG2 may be uniformly sprayed.

13 is a rear perspective view schematically showing a gas injection device according to a fifth example of the present invention, FIG. 14 is a vertical cross-sectional view taken along line III-III' shown in FIG. 13, and FIG. ' It is a horizontal cross-section of a line.

13 to 15 , a gas injection device 500 according to a fifth example of the present invention includes a body 110 and first to fourth gas injection modules 120a, 120b, 120c, and 120d. do.

The body 110 may be formed of a flat metal material having a certain thickness, for example, aluminum or an aluminum alloy. The body 110 is detachably mounted on the lower surface of the chamber lid covering the upper part of the process chamber (not shown) so as to face the substrate support means (not shown) installed on the bottom surface of the process chamber. do.

A plurality of first and second gas passages 111 and 117 and a plurality of first and second gas injection holes 113 and 119 are formed in the body 110 .

Each of the plurality of first gas passages 111 is formed inside the body 110 so as to be parallel to the longitudinal direction Y of the body 110 and to have a constant interval. Each of the plurality of second gas passages 117 is spaced apart from each of the plurality of first gas passages 111 in the thickness direction Z of the body 110 and is constant to be parallel to the horizontal direction X of the body 110 . It is formed inside the body 110 to have a gap. Each of the plurality of first and second gas passages 111 and 117 may be formed by a gun drill process as in the first example of the present invention described above.

Each of the plurality of first gas injection holes 113 is formed vertically from the rear surface of the body 110 to have a constant interval, and communicates with each of the plurality of first gas passages 111 , thereby providing a plurality of first gas passages. The first process gas PG1 injected into 111 is sprayed downward at a constant pressure. Each of the plurality of second gas injection holes 119 is formed vertically from the rear surface of the body 110 to have a constant distance while avoiding the first gas flow path 111 , and the plurality of second gas flow passages 117 . The second process gas PG2 that is the same as or different from the first process gas PG1 injected into the plurality of second gas passages 117 by communicating with each other is sprayed downward at a constant pressure. Each of the plurality of first and second gas injection holes 113 and 119 may include one or more injection holes as in the first example of the present invention described above.

The first gas injection module 120a is coupled to the first side surface of the body 110 and supplies a first process gas PG1 supplied through at least one first gas supply pipe 130a to the plurality of first gases. It is injected into one side of each of the flow passages 111 . Since the first gas injection module 120a is the same as the first gas injection module 120a of the first example of the present invention, a description thereof will be omitted.

The second gas injection module 120a is coupled to a second side opposite to the first side of the body 110 to supply a first process gas PG1 supplied through at least one second gas supply pipe 130b. It is injected into the other side of each of the plurality of first gas passages 111 . Since the second gas injection module 120b is also the same as the second gas injection module 120b of the first example of the present invention described above, a description thereof will be omitted.

The third gas injection module 120c is coupled to the third side surface of the body 110 and is the same as or different from the first process gas PG1 supplied through at least one third gas supply pipe 130c. The gas PG2 is injected into one side of each of the plurality of second gas passages 117 . The third gas injection module 120c according to an example includes a first gas buffering space GBS1 that primarily buffers the second process gas supplied from the third gas supply pipe 130c, and the first gas buffering space GBS1. ) may include a second gas buffering space GBS2 for secondary buffering and injecting the second process gas PG2 supplied from ) to one side of the plurality of second gas flow paths 117 . For example, the third gas injection module 120c includes a first gas buffering member 121 having a first gas buffering space GBS1 and a second gas buffering member 123 having a second gas buffering space GBS2. ) can be included. As described above, the third gas injection module 120c injects the second process gas PG2 supplied from the third gas supply pipe 130c to one side of each of the plurality of second gas passages 117 , except that Since is the same as the above-described first gas injection module 120a, the same reference numerals are given to the same components, and a description thereof will be omitted.

The fourth gas injection module 120d is coupled to a fourth side opposite to the third side surface of the body 110 and the second process gas PG2 is supplied through at least one fourth gas supply pipe 130d. is injected into the other side of each of the plurality of second gas passages 117 . The fourth gas injection module 120d includes a first gas buffering member 121 having a first gas buffering space GBS1 and a second gas buffering space GBS2, like the third gas injection module 120c. ) may include a second gas buffering member 123 having a. As described above, the fourth gas injection module 120d injects the second process gas PG2 supplied from the fourth gas supply pipe 130d to the other side of each of the plurality of second gas passages 117 , except that Since is the same as the above-described third gas injection module 120c, a description thereof will be omitted.

As described above, in the gas injection device 500 according to the fifth example of the present invention, when the first and second process gases PG1 and PG2 are the same, a plurality of first and second gas flow paths intersecting each other ( Since the process gases PG1 and PG2 are injected from both sides of each of the 111 and 117 , the process gas may be more uniformly injected into the plurality of gas flow passages 111 .

In addition, even when the gas injection device 500 according to the fifth example of the present invention injects different first and second process gases PG1 and PG2, a plurality of first and second gas passages intersecting each other ( Since the first and second process gases PG1 and PG2 are spatially separated from each other, the first and second process gases PG1 and PG2 that are different from each other are fundamentally prevented from being mixed in the body 110 because the 111 and 117 are spatially separated from each other. , PG2) can be sprayed more uniformly.

On the other hand, in the gas injection device 500 according to the fifth example of the present invention, in order to make the process gases PG1 and PG2 injected into the plurality of first and second gas passages 111 and 117, respectively, even more uniform, FIG. The structure of the gas injection members 127a and 127b shown in FIGS. 7 to 9 , the structure of the plurality of group buffering members 123a and 123b shown in FIG. 10 , the structure of the sealing cap 140 shown in FIG. 11 , or The structure of the gas injection member (127a, 127b) shown in FIG. 12 may be further included, and these components may be installed on each of the first to fourth side surfaces of the body 110 . Here, for example, a case in which the gas injection device 500 according to the fifth example of the present invention includes the gas injection members 127a and 127b of FIG. 12 , and the plurality of first and second gas flow paths 111 and 117 ), the first process gas PG1 may be supplied to some of the first gas passages of the plurality of first gas passages 111 through the above-described first gas injection member 127a. and the second process gas PG2 may be supplied to the remaining first gas passages through the second gas injection member 127b described above, and some second gas passages of the plurality of second gas passages 117 . A third process gas, which is the same as or different from the second process gas, may be supplied to the first gas injection member 127a and the same third gas injection member (not shown) through the same third gas injection member 127a. A fourth process gas that is the same as or different from the third process gas may be supplied through the same fourth gas injection member (not shown) as the above-described second gas injection member 127b.

16 is a cross-sectional view schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 16 , a substrate processing apparatus according to an exemplary embodiment includes a process chamber 710 , a chamber lid 730 , a substrate support unit 750 , and a gas injection unit 770 .

The process chamber 710 is formed in a “U” shape with an open top. A substrate entrance (not shown) through which the substrate enters and exits is formed on one side of the process chamber 710 , and at least one exhaust port 712 for exhausting gas from the process space is formed on the bottom surface.

The chamber lid 730 is installed on the upper portion of the process chamber 710 to cover the upper portion of the process chamber 710 . In this case, an insulating member 720 such as an O-ring is interposed in a coupling portion between the process chamber 710 and the chamber lid 730 . The insulating member 720 serves to seal and electrically separate the chamber lid 730 and the process chamber 710 .

The chamber lid 730 is connected to an external power supply unit 790 through a power cable 792 to receive plasma power from the power supply unit 790 . Here, an impedance matching circuit 794 may be installed in the power cable 792 . The impedance matching circuit 794 may include at least two impedance elements (not shown) for matching a load impedance and a source impedance of the plasma power supplied to the chamber lead 730 , and the impedance elements are variable. It may be formed of at least one of a capacitor and a variable inductor.

The substrate support means 750 is installed in the process chamber 710 to support the substrate S loaded into the process space by a substrate transfer device (not shown). In this case, the substrate support means 750 may be installed to be liftable in the process chamber 710 . In this case, the substrate support means 750 is mounted on the lift shaft 752 penetrating the bottom surface of the process chamber 710 . By being coupled so as to be elevating by the elevating device (not shown), the elevating shaft 752 is elevated to a process position or a substrate loading and unloading position according to the elevating of the elevating shaft 752 according to the driving of the elevating device (not shown). A bellows 754 is sealed between the lifting shaft 752 and the process chamber 710 .

The gas distributing unit 770 is coupled to the lower surface of the chamber lid 730 to face the substrate supporting unit 750 and injects a process gas supplied from an external gas supply device onto the substrate S. The gas injection means 770 is composed of the gas injection devices 100, 200, 300, 400, 500 according to any one of the first to fifth examples of the present invention shown in FIGS. 2 to 15. Therefore, a detailed description thereof will be omitted.

A thin film deposition process using the substrate processing apparatus according to an example of the present invention will be schematically described as follows.

First, a plurality of substrates S or one large-area substrate S is loaded and seated on the substrate supporting means 750 .

Then, the process gas is injected into the gas injection module of the gas injection means 770 through the gas supply pipes 130a and 130b so that the process gas is continuously supplied by the first and second gas buffering spaces of the gas injection module. The secondary and secondary buffers (or diffusion) are injected into the plurality of gas passages, and are injected downwardly onto the substrate S through the plurality of gas injection holes. At the same time, plasma power is supplied to the chamber lid 730 through the power supply unit 790 and plasma power is applied to the gas injection unit 770 through the chamber lid 730 . Accordingly, a plasma is formed between the substrate supporting unit 750 and the gas distributing unit 770 .

Accordingly, the process gas sprayed from the gas spraying means 770 is activated by the plasma and sprayed onto the substrate S, so that a predetermined thin film according to the activated process gas is deposited on the upper surface of the substrate S.

As described above, according to the substrate processing apparatus according to the present invention, the process gas is sequentially first and secondly buffered and diffused in the gas injection module coupled to the body of the gas injection means 770 and injected into the gas flow path. can be uniformly sprayed on the substrate S, thereby enabling a uniform substrate processing process. In addition, when the gas injection means 770 is cleaned, both ends of each of the plurality of gas passages are exposed to the outside through separation of the gas injection module detachably coupled to the body of the gas injection means 770 , so that the gas passage and the gas are exposed to the outside. It is possible to facilitate the cleaning of the spray hole and to reduce the cleaning time.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the technical field to which the present invention pertains that various substitutions, modifications and changes are possible without departing from the technical matters of the present invention. It will be clear to those who have the knowledge of Therefore, the scope of the present invention is indicated by the following claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention.

100, 200, 300, 400, 500: gas injection device
110: body
111: gas flow path (first gas flow path)
113: gas injection hole (first gas injection hole)
117: second gas flow path
119: second gas injection hole
120a, 120b, 120c, 120d: gas injection module
121: first gas buffering member
123: second gas buffering member
123a, 123b: no group buffering
127a: first gas injection member
127b: second gas injection member
140: sealing cap
700: substrate processing device
710: process chamber
730: chamber read
750: substrate support means
770: gas injection means

Claims (9)

a body including a plurality of gas flow passages connected to a plurality of gas injection holes for injecting a process gas;
a first gas injection module coupled to one side of the body to inject a first process gas into only some of the plurality of gas flow passages; and
a second gas injection module coupled to the other side of the body opposite to one side of the body to inject a second process gas into only the remaining gas flow paths among the plurality of gas flow paths;
The first gas injection module includes a first gas injection member coupled to one side of the body,
The second gas injection module includes a second gas injection member coupled to the other side of the body,
Some of the gas flow paths of the plurality of gas flow paths communicate with the first gas injection module through a plurality of gas injection holes formed in the first gas injection member on one side, and the other side is closed by the second gas injection member there is,
One side of the remaining gas flow paths among the plurality of gas flow paths is closed by the first gas injection member, and the other side communicates with the second gas injection module through a plurality of gas injection holes formed in the second gas injection member. Gas injection device, characterized in that. The method of claim 1,
The first gas injection member is coupled to one side of the body so as to cover one side of the plurality of gas passages,
The plurality of gas injection holes formed in the first gas injection member overlap only one side of some gas passages among the plurality of gas passages,
The second gas injection member is coupled to the other side of the body so as to cover the other side of the plurality of gas flow paths,
The gas injection device of claim 1, wherein the plurality of gas injection holes formed in the second gas injection member overlap only the other side of the remaining gas passages among the plurality of gas passages. The method of claim 1,
Each of the plurality of gas injection holes formed in the first gas injection member is formed to have a diameter smaller than a diameter of each of the plurality of gas passages. The method of claim 1,
A first insertion groove into which the first gas injection member is inserted is formed in one side of the body,
The gas injection device, characterized in that the first gas injection member is inserted and coupled to the first insertion groove so as to be detachable. The method of claim 1,
Each of the plurality of gas injection holes formed in the second gas injection member is formed to have a diameter smaller than a diameter of each of the plurality of gas passages. The method of claim 1,
The first gas injection module communicates with a first gas buffering space for firstly buffering the first process gas supplied from the outside, and the first gas buffering space for the firstly buffered first process gas to be secondarily a second gas buffering space for buffering;
and the first gas injecting member injects the first process gas, which is secondarily diffused in the second gas buffering space, into only some of the gas passages among the plurality of gas passages. The method of claim 1,
The second gas injection module communicates with a first gas buffering space for firstly buffering the second process gas supplied from the outside, and the first gas buffering space for the firstly buffered second process gas. a second gas buffering space for buffering;
and the second gas injecting member injects the second process gas, which is secondarily diffused in the second gas buffering space, into only the remaining gas passages among the plurality of gas passages. a body including a plurality of gas flow passages connected to a plurality of gas injection holes for injecting a process gas;
a first gas injection module coupled to one side of the body to inject a first process gas into only some of the plurality of gas flow passages; and
a second gas injection module coupled to the other side of the body opposite to one side of the body to inject a second process gas into only the remaining gas flow paths among the plurality of gas flow paths;
Some of the gas flow passages of the plurality of gas flow passages have one side communicating with the first gas injection module and the other side closed by a sealing cap,
One side of the remaining gas flow paths among the plurality of gas flow paths is closed by a sealing cap, and the other side communicates with the second gas injection module. process chamber;
a chamber lid covering an upper portion of the process chamber;
a substrate support means installed inside the process chamber to support a substrate; and
and a gas injection means coupled to a lower surface of the chamber lid to face the substrate support means,
The said gas injection means includes the gas injection apparatus of any one of Claims 1-8, The substrate processing apparatus characterized by the above-mentioned.

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