KR200476336Y1 - Apparatus for injection gas and apparatus for processing substrate including the same - Google Patents

Abstract

The present invention provides a gas injection apparatus that is easy to clean and a substrate processing apparatus including the gas injection apparatus, wherein the gas injection apparatus includes a body; A plurality of gas supply passages formed in the body so as to penetrate one side and the other side of the body and to which a first gas is supplied from the outside; A plurality of first gas injection holes formed in the body so as to be connected to the plurality of gas supply channels to inject the first gas supplied from the plurality of gas supply channels; A plurality of second gas injection holes arranged in the periphery of each of the plurality of first gas injection holes to inject a second gas supplied from the outside into the body; First channel sealing means detachably coupled to one side of the body to seal one side of each of the plurality of gas supply channels; And a second flow path sealing means removably coupled to the other side of the body to seal the other side of each of the plurality of gas supply flow paths.

Description

BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates to a gas injection device,

The present invention relates to a gas injection apparatus and a substrate processing apparatus including the same.

Generally, in order to manufacture a semiconductor device, a flat panel display, and a solar cell, a predetermined thin film layer must be formed on the surface of a substrate. To this end, a thin film deposition process for depositing a thin film of a specific material on a substrate, A photolithography process for selectively exposing a thin film using the thin film, and an etching process for forming a pattern by selectively removing a thin film of the exposed portion.

Such a semiconductor manufacturing process is performed inside a substrate processing apparatus designed for an optimum environment for the process, and recently, a substrate processing apparatus for performing a deposition or etching process using plasma is widely used.

A substrate processing apparatus, such as a plasma enhanced chemical vapor deposition, utilizes a gas injection device to introduce gas into the chamber.

The gas injection device has a plurality of injection holes, which function as nozzles, in a plate-shaped body to inject various process gases onto the substrate surface. As the material of the gas injection device, aluminum material is usually used in consideration of processability and reactivity with the process gas.

1, a conventional gas injection device is formed by machining a plate-shaped body 10, a drill, and the like, along the transverse direction and the longitudinal direction of the body 10, A plurality of gas passages 20 which are perforated and sealed at both ends by welds 22 and a plurality of injections 18 vertically perforated on the lower surface of the body 10 to be connected to each of the plurality of gas passages 20, Hole (30). In the conventional gas injection apparatus, the process gas injected into each of the plurality of gas flow channels 20 is injected downward through the plurality of injection holes 30 through the gas supply pipe 40.

In the conventional gas injection apparatus as described above, both ends of each of the plurality of gas flow paths 20 are permanently sealed by welding, thereby making it difficult to clean the gas flow paths 20 and the injection holes 30, However, there is a problem that a long cleaning time is required for complete cleaning.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a gas injection apparatus which is easy to clean and a substrate processing apparatus including the same.

It is another object of the present invention to provide a gas injection apparatus and a substrate processing apparatus including the same that can prevent a pattern corresponding to the shape of each gas injection hole from being transferred to a substrate during a substrate processing process.

According to an aspect of the present invention, there is provided a gas injection device comprising: a body; A plurality of gas supply passages formed in the body so as to penetrate one side and the other side of the body and to which a first gas is supplied from the outside; A plurality of first gas injection holes formed in the body so as to be connected to the plurality of gas supply channels to inject the first gas supplied from the plurality of gas supply channels; A plurality of second gas injection holes arranged in the periphery of each of the plurality of first gas injection holes to inject a second gas supplied from the outside into the body; First channel sealing means detachably coupled to one side of the body to seal one side of each of the plurality of gas supply channels; And a second flow path sealing means removably coupled to the other side of the body to seal the other side of each of the plurality of gas supply flow paths.

The first flow path sealing means includes a sealing plate covering one side of the body; A gasket interposed between one side of the body and an inner side of the sealing plate; And a plurality of fastening members detachably coupling the sealing plate to one side of the body.

Each of the first flow path sealing members may further include a plurality of insertion protrusions protruding from an inner surface of the squeeze seal plate and inserted into one side of each of the plurality of gas supply passages.

The sealing plate may be divided into a plurality of portions so as to seal together at least two gas supply passages of the plurality of gas supply passages, and the gasket may be interposed between each of the plurality of divided sealing plates and one side of the body .

The plurality of first gas injection holes may be arranged in a zigzag form along the longitudinal direction of the gas supply passage and the plurality of second gas injection holes may be arranged in a zigzag form between the plurality of first gas injection holes .

The gas injection device may further include a first gas common supply member formed in the body and first buffering the first gas supplied from the outside to supply the first gas to each of the plurality of first gas supply channels .

Wherein the first gas common supply member includes: a first gas common flow channel formed to be concave from an upper surface of the body so as to cross each of the plurality of first gas supply channels; A plurality of common connection flow paths formed at intersections of each of the plurality of first gas supply channels and the first gas common channel and communicating each of the plurality of first gas supply channels with the first gas common channel; A common channel cover for sealing an upper portion of the first gas common flow path to provide a first gas buffering space communicating with each of the plurality of common connection flow paths; And a first gas injection port inserted in the common channel cover for injecting the first gas into the first gas buffering space.

According to an aspect of the present invention, there is provided a substrate processing apparatus comprising: a process chamber; A chamber lid covering the top of the process chamber; A substrate supporting means installed inside the process chamber to support the substrate; And a gas injection means coupled to a lower surface of the chamber lid so as to face the substrate support means, wherein the gas injection means may comprise the gas injection device.

The substrate processing apparatus may further include a second gas buffering space provided between the lower surface of the chamber lid and the body of the gas injection means and supplied with the second gas from the outside.

The substrate processing apparatus may further include a baffle plate coupled to a bottom surface of the chamber lid to adjust a flow of a second gas supplied from the outside to supply the second gas to the second gas buffering space.

According to the present invention, the following effects can be obtained.

First, when cleaning the gas injection device, both ends of each of the plurality of first gas supply channels may be exposed to the outside through separation of the flow path sealing means, thereby facilitating the cleaning of the gas injection device, There is an effect that it can be reduced.

Second, since the plurality of first and second gas injection holes are arranged in a zigzag manner, the pattern corresponding to the shape of each gas injection hole can be prevented from being transferred to the substrate during the substrate processing step.

1 is a cross-sectional view schematically showing a conventional gas injection device.
2 is a cross-sectional perspective view showing a part of the gas injection apparatus according to the present invention in an incision.
3 is a cross-sectional view showing a cross section taken along the line I-I 'shown in FIG.
4 is an exploded perspective view of the flow path sealing means according to the present invention.
Fig. 5 is a view for explaining the gas supply passage and the common gas passage shown in Figs. 2 and 3. Fig.
6 is a view for explaining an arrangement structure of a gas injection hole according to an embodiment of the present invention.
7 is a cross-sectional view schematically showing a substrate processing apparatus according to the present invention.

It should be noted that, in the specification of the present invention, the same reference numerals as in the drawings denote the same elements, but they are numbered as much as possible even if they are shown in different drawings.

Meanwhile, the meaning of the terms described in the present specification should be understood as follows.

The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms.

It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one.

Hereinafter, preferred embodiments of a gas injection apparatus and a substrate processing apparatus including the same according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 3 is a cross-sectional view taken along the line I-I 'of FIG. 2, and FIG. 4 is a cross-sectional view of the gas- Fig. 5 is a view for explaining the gas supply passage and the common gas passage shown in Figs. 2 and 3. Fig.

2 to 5, the gas injection device 100 according to the present invention includes a body 110, a plurality of first gas supply channels 120, a plurality of first gas injection holes 130, 2 gas injection hole 140, and first and second flow path sealing means 150 and 160. [

The body 110 is formed of a plate-shaped metal material, for example, aluminum or an aluminum alloy. The body 110 is detachably mounted on a lower surface of a chamber lid that covers an upper portion of a process chamber (not shown), so that the substrate 110 is mounted on a substrate supporting means (not shown) I will see. At this time, a second gas buffering space (not shown) is provided between the body 110 and the chamber lid to supply a second gas from the outside.

The second gas may be a source gas including a main component of the thin film to be formed on the substrate. In this case, the second gas may be at least one selected from the group consisting of an oxide film, a hydroquinone oxide film, a thin film of a high-K material, silicon (Si), a titanium group element (Ti, Zr, Hf, Gas. For example, a source gas containing a silicon (Si) material can be formed using a silane (SiH4), disilane (Si2H6), trisilane (Si3H8), HCD (Hexachlorosilane), TSA (Trisilylamine) Tri-dimethylaminosilane, DCS (dichlorosilane), or TEOS (tetraethylorthosilicate).

Each of the plurality of first gas supply passages 120 is formed at a predetermined interval in the body 110 so as to be parallel to the first direction Y so that a first gas supplied from the outside is supplied to the plurality of first gas- Holes 130, respectively. Each of the plurality of first gas supply passages 120 is formed so as to penetrate one side surface and the other side surface of the body 110 by drilling and both end portions thereof are connected to the first and second flow path sealing means 150, and 160, respectively. Each of the plurality of first gas supply passages 120 is connected to the corresponding first gas injection hole 130 and is connected to the first gas injection holes 130 in the first direction Y At regular intervals or predetermined intervals along a second direction X perpendicular to the horizontal direction.

The first gas may be a reactive gas that reacts with the source gas to form a thin film. In this case, the first gas may be hydrogen (H2), nitrogen (N2), nitrous oxide (N2O), oxygen (O2), ammonia (NH3) And may be selected depending on the material of the thin film to be deposited. Further, the first gas may be supplied together with an auxiliary gas for plasma ignition. In this case, the auxiliary gas may be a non-reactive gas such as argon (Ar), xenon (Ze), or helium It can be a gas.

Each of the plurality of first gas injection holes 130 is perforated in a vertical direction Z from a lower surface of the body 110 so as to communicate with a corresponding one of the plurality of first gas supply channels 120, The first gas supplied from the gas supply passage 120 is sprayed downward onto the substrate S. That is, the plurality of first gas injection holes 130 are formed in the lower part of each of the plurality of first gas supply channels 120, and the plurality of gas injection holes 130 formed in the lower part of one gas supply channel 120 1 gas injection holes 130 are arranged in a zigzag manner along the first direction Y which is the longitudinal direction of the gas supply passage 120. [

Each of the plurality of first gas injection holes 130 according to one embodiment includes a first gas injection hole (not shown) vertically perforated so as to have an inclined surface whose diameter changes from the lower surface of the body 110 toward the gas supply path 120 And a first gas connection path 130b formed in the first gas injection port 130a and the gas supply path 120 so as to communicate with each other.

The first gas injection opening 130a is formed so as to have an isosceles triangular cross-section from the lower surface of the body 110, a trapezoidal cross-section whose upper side is smaller than the lower side, and an isosceles triangular cross- However, the present invention is not limited to this, and may be configured to be optimized to at least one of an injection area, an injection angle, and an injection amount of the first gas to be injected.

The first gas communication passage 130b according to an exemplary embodiment is formed by a drilling process so as to communicate with the center portion of the upper surface of the first gas injection opening 130a between the central portion of the first gas injection opening 130a and the gas supply passage 120 Lt; / RTI > In this case, the first gas injection port 130a and the first gas connection path 130b communicated with each other are perforated perpendicularly to the body 110 so as to have a funnel shape inverted up and down.

The first gas communication passage 130b according to another example is formed by a drilling process so as to communicate with the inclined surface of the first gas injection hole 130a and between the one side inclined surface of the first gas injection hole 130a and the gas supply passage 120 Lt; / RTI > In this case, the central portions of the first gas injection opening 130a and the first gas communication flow passage 130b, which are in communication with each other, are staggered by a predetermined distance with reference to the vertical direction of the body 110. The path of the first gas supplied to the first gas injection opening 130a by the first gas communication passage 130b according to another example is changed by the inclined surface of the first gas injection opening 130a, The shape of the gas injection opening 130a due to the vertical injection of the first gas can be prevented from being transferred to the substrate.

Each of the plurality of second gas injection holes (140) is perforated in a vertical direction (Z) so as to vertically penetrate the body (110), thereby passing a second gas supplied from the second gas buffering space to the plurality of first gas injection holes To the periphery of the first gas injected in each of the holes (130). That is, the plurality of second gas injection holes 140 are arranged between the adjacent first gas injection holes 130 with respect to the second direction X, .

Each of the plurality of second gas injection holes 140 according to an embodiment includes a second gas injection hole 140a vertically perforated so as to have an inclined surface whose diameter changes from the lower surface of the body 110 to the upper surface, And a second gas connection channel 140b formed to communicate with the second gas injection port 140a from the upper surface of the second gas connection port 110.

The second gas injection opening 140a is formed so as to have an isosceles triangular cross section from the lower surface of the body 110 and a trapezoidal cross section whose upper side is smaller than the lower side and the isosceles triangular cross section However, the present invention is not limited thereto, and may be configured to be optimized to at least one of the injection area, the injection angle, and the injection amount of the second gas to be injected.

The second gas communication passage 140b may be drilled from the upper surface of the body 110 by drilling so as to communicate with the center of the upper surface of the second gas injection hole 140a. In this case, the second gas injection port 140a and the second gas connection path 140b communicated with each other are perforated perpendicularly to the body 110 so as to have an inverted funnel shape.

The second gas communication passage 140b may be drilled from the upper surface of the body 110 by drilling so as to communicate with the inclined surface of the second gas injection hole 140a. In this case, the central portions of the second gas injection opening 140a and the second gas communication flow passage 140b, which are in communication with each other, are staggered by a predetermined distance with reference to the vertical direction of the body 110. The path of the second gas supplied to the second gas injection port 140a by the second gas connection path 140b according to another example is changed by the inclined surface of the second gas injection port 140a, The shape of the gas injection opening 140a due to the vertical injection of the second gas can be prevented from being transferred to the substrate.

Each of the first and second flow path sealing units 150 and 160 is detachably coupled to both sides of the body 110 to seal both ends of each of the plurality of first gas supply channels 120. That is, each of the first and second passage sealing members 150 and 160 seals the inner space of each of the plurality of first gas supply passages 120 from the outside, Thereby preventing external leakage of the first gas supplied to each of them. Each of the first and second flow path sealing units 150 and 160 may be separated from the body 110 and may be connected to the plurality of first gas supply passages 120 when the gas injection apparatus 100 is cleaned according to the present invention. The first gas injection holes 130 and the plurality of second gas injection holes 140 are easily cleaned by exposing the both ends of the first gas supply passage 120, the plurality of first gas injection holes 130, and the plurality of second gas injection holes 140 .

The first flow path sealing means 150 may include a sealing plate 151, a plurality of insertion protrusions 153, a plurality of fastening members 155, and a gasket 157.

The sealing plate 151 is formed in a flat plate shape having a predetermined thickness and height to cover one side of the body 110. Here, a plate insertion groove may be formed on one side of the body 110 to insert the sealing plate 151 thereinto.

Each of the plurality of insertion protrusions 153 protrudes from the inner surface of the sealing plate 151 facing the one side of the body 110 to have a predetermined height, Is inserted at one end portion. For this, each of the insertion protrusions 153 may be formed in a cylindrical shape so as to have a diameter that can be inserted into the first gas supply passage 120. The plurality of insertion protrusions 153 may be inserted into one end portion of the first gas supply passage 120 to function as a plate alignment means for setting the engagement position of the sealing plate 151.

Each of the plurality of fastening members 155 is coupled to one side of the body 110 through the sealing plate 151 to thereby detachably couple the sealing plate 151 to one side of the body 110 . Each of the plurality of fastening members 155 according to one example may be formed of a screw, a bolt, or the like. The sealing plate 151 is formed with a plurality of fastening member insertion holes 155a through which the fastening members 155 are inserted and is fastened to one side of the body 110 with the fastening members 155 A threaded hole 155b is formed.

The gasket 157 is interposed between one side surface of the body 110 and an inner side surface of the sealing plate 151 so that the gasket 157 is sealed by the plurality of fastening members 155, Thereby sealing between the plate 151 and the body 110. The gasket insertion groove 157a into which the gasket 157 is inserted may be formed on the inner surface of the sealing plate 151 facing the one side of the body 110. However, The gasket insertion groove 157a may be formed on one side of the body 110 and / or on the inner side of the sealing plate 151. [

The second flow path sealing means 160 may include a sealing plate 151 as in the first flow path sealing means 150 described above except that the second flow path sealing means 160 is detachably coupled to the other side of the body 110, A plurality of fastening members 153, a plurality of fastening members 155, and a gasket 157, so that the same reference numerals are given thereto, and redundant description thereof will be omitted.

4, each of the first and second flow path sealing units 150 and 160 includes one sealing plate 151 and one gasket 157. However, the present invention is not limited thereto, The plate 151 may include a plurality of partition plates for sealing the plurality of gas supply passages 120 in units of two or more gas supply passage units. In this case, the gasket (157) is interposed between each of the plurality of partition plates and the body (110). As a result, each of the first and second passage sealing members 150 and 160 may include one or more sealing plates 151 depending on the number of the first gas supply passages 120, For convenience of cleaning, it is preferable to include one sealing plate or to include two or three partition plates. When each of the first and second passage sealing members 150 and 160 is formed of a plurality of partition plates, the plurality of gas supply passages 120 are grouped into a plurality of groups according to the configuration of the passage sealing unit, The cleaning process for the gas supply passage 120 of each group may be performed individually or simultaneously.

The gas injection apparatus 100 according to the present invention includes a gas common supply member 170 for first buffering the first gas supplied from the outside and supplying the first gas to each of the plurality of first gas supply channels 120 And the like.

The gas common supply member 170 may include a first gas common channel 171, a plurality of common connection channels 173, a common channel cover 175, and a first gas injection port 177 .

The first gas common channel 171 is recessed to have a predetermined width and depth from one side or both upper sides of the body 110 so as to cross one side or both sides of each of the plurality of first gas supply channels 120 do. That is, each of the side surfaces of the concave first gas common flow path 171 is formed with a stepped surface.

Each of the plurality of common connection flow paths 173 is formed by vertically penetrating the intersection of each of the plurality of first gas supply flow paths 120 and the first gas common flow path 171 to form the first gas common flow path 171, To each of the plurality of first gas supply channels (120). Each of the plurality of common connection flow paths 173 may be formed to communicate with the first gas supply flow path 120 by drilling the bottom surface of the first gas common flow path 171.

The common channel cover 175 is inserted into the first gas common channel 171 to seal the upper portion of the first gas common channel 171 so that the first gas common channel 171 is filled with the first gas buffering space GBS1). That is, the common channel cover 175 is seated on the stepped surface formed on each side surface of the first gas common flow path 171 to seal the upper portion of the first gas common flow path 171. Accordingly, the first gas buffering space GBS1 is provided between the bottom surface of the first gas common flow path 171 and the lower surface of the common flow path cover 175. A sealing member (not shown) for closing (or sealing) the first gas buffering space GBS1 may be interposed between the common channel cover 175 and the first gas common channel 171.

The first gas injection port 177 injects a first gas supplied from an external first gas supply device (not shown) into the first gas buffering space GBS1 through the common channel cover 175. [ The first gas injection port 177 may be mounted on the upper surface of the body 110 and the common channel cover 175 overlapping the middle portion of the first gas buffering space GBS1. Accordingly, the first gas is first diffused and buffered in the first gas buffering space GBS1, and then the first gas is supplied to the plurality of first gas supply channels 120 through the plurality of common connection channels 173. [ And the second gas is injected onto the substrate through each of the plurality of first gas injection holes 130 or after the second gas is injected from the plurality of second gas injection holes 140, .

On the other hand, as described above, when the plurality of gas supply passages 120 are grouped into a plurality of groups, the gas common supply member 170 individually supplies the first gas supply passages 120 to the respective gas supply passages 120 of the respective groups And may be configured to supply gas.

According to the present invention, since the plurality of first and second gas injection holes 130 and 140 are arranged in a zigzag manner, a pattern corresponding to the shape of each gas injection hole is formed on the substrate S It can be prevented from being transferred. In addition, the arrangement structure of each of the plurality of first and second gas injection holes 130 and 140 disposed in the zigzag shape may be modified into various shapes.

6 is a view for explaining an arrangement structure of a gas injection hole according to an embodiment of the present invention.

Referring to FIG. 6, the arrangement of the gas injection holes according to an embodiment of the present invention is such that each of the plurality of first and second gas injection holes 130 and 140 is arranged in a zigzag manner along the first direction Y .

Specifically, in the arrangement structure of the gas injection holes according to an embodiment of the present invention, each of the plurality of first gas injection holes 130 has a first pitch P1 along the second direction X (Z1) along the first direction (Y). For example, each of the first gas injection holes 130 adjacent to the upper and lower sides is shifted leftward and rightward by a first distance d1 from the first reference line CL1 of the first pitch P1, Each of the gas injection holes 130 is arranged in the first zigzag shape Z1 along the first direction Y. [ Accordingly, each of the first gas injection holes 130 adjacent to each other is overlapped with each other by more than half with respect to the first direction (Y).

Each of the plurality of second gas injection holes 140 is disposed between the adjacent first gas injection holes 130 with respect to the second direction X, And are arranged in a zigzag form Z2. For example, each of the second gas injection holes 140 adjacent to the upper and lower sides may have a second distance d2 that is longer than the first distance d1 at a second reference line CL2 that is a center line of the first pitch P1 ) So that each of the plurality of second gas injection holes 140 is arranged in the second zigzag shape Z2 along the first direction Y. [ Here, the angle? 2 of the second zigzag shape Z2 may be smaller than the angle? 1 of the first zigzag shape Z1. Each of the plurality of second gas injection holes 140 is disposed in the second zigzag shape Z2 so as to be adjacent to the first gas injection holes 130 arranged in the first zigzag shape Z1 Each of the first and second gas injection holes 130 and 140 adjacent to each other along the second direction X constitutes one process gas injection group and the process gas injection group has a first direction Y And are arranged in a zigzag manner.

On the other hand, each of the upper and lower second gas injection holes 140 is shifted leftward and rightward by the first distance d1 from the second reference line CL2, which is the center line of the first pitch P1, Each of the second gas injection holes 140 may be disposed in the first zigzag shape Z1 along the first direction Y. [ In this case, each of the plurality of first and second gas injection holes 130 and 140 is arranged in parallel so as to have the first zigzag shape Z1.

On the other hand, the first pitch P1 between adjacent first gas injection holes 130 arranged in the first direction X is set to be three times larger than the pitch between the second gas injection holes 140, The pitch between the first and second gas injection holes 130 and 140 along the first and second directions Y and X may be set to be equal to 1/3 of the first pitch P1 . In this case, each of the plurality of second gas injection holes 140 is arranged in two rows with the first zigzag shape Z1 between the first gas injection holes 130. [

The gas injection device 100 according to the present invention as described above is characterized in that the flow path sealing means 150 and 160 for sealing the both ends of each of the plurality of first gas supply flow paths 120 are provided on both sides of the body 110 Both ends of each of the plurality of first gas supply passages 120 can be exposed to the outside through the separation of the flow path sealing means 150 and 160 when the gas injection apparatus 100 is cleaned The plurality of first gas supply holes 120, the plurality of first gas injection holes 130, and the plurality of second gas injection holes 140 can be easily cleaned and the cleaning time can be reduced .

In the above description, the first gas is the reactive gas and the second gas is the source gas. However, the present invention is not limited to this, and the first gas may be the source gas described above, and the second gas may be the above- have.

9 is a cross-sectional view schematically showing a substrate processing apparatus according to the present invention.

Referring to FIG. 9, the substrate processing apparatus according to the present invention includes a process chamber 210, a chamber lid 230, a substrate holding means 250, and a gas injection means 270.

The process chamber 210 is formed in a "U" A substrate inlet / outlet (not shown) through which the substrate enters and exits is formed at one side of the process chamber 210, and at least one exhaust port 212 for exhausting gas in the process space is formed on the bottom surface.

The chamber lid 230 is installed on the top of the process chamber 210 to cover the top of the process chamber 210. At this time, an insulating member 220 such as an O-ring or the like is interposed in the joint portion between the process chamber 210 and the chamber lid 230. The insulating member 220 seals between the chamber lid 230 and the process chamber 210 and electrically isolates the chamber lid 230 from the process chamber 210.

A second gas supply pipe 240 connected to an external second gas supply device (not shown) is installed on the upper surface of the chamber lid 230. On the lower surface of the chamber lid 230, a concave groove 233 is formed to have a step 231 in a stepped shape. A second gas inlet is formed in the groove 233 to communicate with the second gas supply pipe 240.

A baffle plate 290 may be mounted on the step 231. In this case, a second gas injection space (GIS) through which the second gas is injected from the second gas supply pipe 240 is provided between the lower surface of the chamber reed 230 and the baffle plate 290. Accordingly, the baffle plate 290 can control the flow of the second gas supplied to the gas injection means 270 by spreading and distributing the second gas injected into the second gas injection space (GIS) do. To this end, a plurality of regular or irregularly formed gas distribution slits or holes are formed in the baffle plate 290 to diffuse and distribute the second gas. The baffle plate 290 may be omitted.

The chamber lead 230 is connected to an external power supply means 300 through a power cable 310 to receive a plasma power from the power supply means 300. Here, the power cable 310 may be provided with an impedance matching circuit 320. The impedance matching circuit 320 may include at least two impedance elements (not shown) for matching the source impedance and the load impedance of the plasma power supplied to the chamber lead 230, A capacitor, and a variable inductor.

The substrate supporting means 250 supports the substrate S which is installed in the process chamber 210 and is carried into the process space by a substrate transfer device (not shown). In this case, the substrate supporting means 250 may be installed in the process chamber 210 such that the substrate supporting means 250 can move up and down through the bottom surface of the process chamber 210 252 so as to move up and down to a process position or a substrate loading and unloading position in accordance with the lifting and lowering of the lifting shaft 252 according to the driving of the lifting device (not shown). Between the lifting shaft 252 and the process chamber 210 is sealed by a bellows 254.

The gas injection means 270 is coupled to the lower surface of the chamber lid 230 so as to face the substrate supporting means 250 and injects the first and second gases supplied from the outside onto the substrate S. [ The gas injecting means 270 comprises the gas injecting apparatus 100 according to the present invention shown in FIGS. 2 to 8, and a detailed description thereof will be omitted. In this way, the gas injection means 270 injects the first and second gases. At this time, the second gas is supplied to the second gas injection space (GIS) through the second gas supply pipe 240, is diffused and distributed by the baffle plate 290, and the second gas injection holes 140 on the substrate S as shown in FIG. At the same time, the first gas is injected into the first gas buffering space GBS1 through the first gas injection port 177 provided in the port installation groove 235 formed in the chamber lead 230, After being diffused and buffered, are supplied to each of the plurality of first gas supply channels 120 through the plurality of common connection channels 175 and are secondarily diffused and buffered, the plurality of first gas injection holes The gas is injected onto the substrate S through the plurality of second gas injection holes 130 or to the periphery of the second gas injected from the plurality of second gas injection holes 140.

The thin film deposition process using the substrate processing apparatus according to the embodiment of the present invention will be described briefly as follows.

First, a plurality of substrates S or one large-area substrate S are loaded into the substrate holding means 250 and are then placed thereon.

Then, the first gas is injected into the first gas buffering space GBS1 of the gas injection means 270 through the first gas injection port 177 and the second gas is injected through the second gas supply pipe 240 2 gas is injected into the gas buffering space (GBS2). Accordingly, the second gas is injected onto the substrate S through the second gas buffering space GBS2 and the plurality of second gas injection holes 140, respectively. At the same time, the first gas flows through the first gas buffering space GBS1, the plurality of first gas supply channels 120, and the plurality of first gas injection holes 130, respectively, The gas is injected onto the periphery of the second gas injected from each of the gas injection holes 140 and onto the substrate S. [

The plasma power is supplied to the chamber lid 230 through the power supply means 300 and the plasma power is supplied to the gas injection means 270 through the chamber lid 230 while spraying the first and second gases . Accordingly, a plasma is formed between the substrate supporting means 250 and the gas injection means 270.

Therefore, the first gas or the first and second gases injected from the gas injection means 270 are activated by the plasma and are sprayed onto the substrate S, A predetermined thin film is deposited by the reaction of the two gases.

The substrate processing apparatus according to the present invention includes the gas injection means 270 constituted of the gas injection apparatus 100 described above so that the gas is injected into the flow path sealing means 150, The first gas supply passage 120 and the plurality of first gas discharge holes 130 can be exposed to the outside through the separation of the first gas supply passage 120, And the plurality of second gas injection holes 140 can be easily cleaned, and the cleaning time can be reduced.

In the substrate processing apparatus according to the present invention, a plurality of first and second gas injection holes (130, 140) are arranged in a zigzag manner, so that a pattern corresponding to the shape of each gas injection hole Can be prevented.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. Will be clear to those who have knowledge of.

100: gas injection device 110: body
120: first gas supply passage 130: first gas injection hole
140: second gas injection hole 150, 160: flow path sealing means
151: sealing plate 153: insertion projection
155: fastening member 157: gasket
170: gas common supply member 171: first common gas flow channel
173: common connection channel 175: common channel cover
177: First gas injection port 210: Process chamber
230: chamber lead 240: second gas supply pipe
250: substrate holding means 270: gas spraying means

Claims (10)

Body;
A plurality of gas supply passages formed in the body and supplied with a first gas from the outside;
A plurality of first gas injection holes formed in the lower surface of the body so as to communicate with the plurality of gas supply channels and injecting the first gas supplied from each of the plurality of gas supply channels; And
And first flow path sealing means detachably coupled to one side of the body so as to seal together at least two or more gas supply flow paths of the plurality of gas supply flow paths. The method according to claim 1,
The first flow path sealing means
A plurality of partition plates detachably coupled to one side of the body to seal together at least two gas supply passages of the plurality of gas supply passages;
A gasket interposed between each of the plurality of partition plates and one side of the body; And
And a plurality of coupling members detachably coupling the plurality of partition plates to one side surface of the body. 3. The method of claim 2,
Wherein the first flow path sealing means further comprises a plurality of insertion protrusions protruding from the inner surface of each of the plurality of division plates and inserted into one side of each of the plurality of gas supply passages. delete The method according to claim 1,
Further comprising a plurality of second gas injection holes for injecting a second gas, which is pierced into the body so as to be positioned around each of the plurality of first gas injection holes,
Wherein the plurality of first gas injection holes are arranged in a zigzag shape along the longitudinal direction of the gas supply passage,
Wherein the plurality of second gas injection holes are arranged in a zigzag manner between the plurality of first gas injection holes. The method according to claim 1,
Further comprising: a first gas common supply member formed on the body for primarily buffering the first gas supplied from the outside and supplying the first gas to each of the plurality of first gas supply channels. The method according to claim 6,
Wherein the first gas common supply member comprises:
A first gas common flow channel formed to be concave from an upper surface of the body so as to cross each of the plurality of first gas supply channels;
A plurality of common connection flow paths formed at intersections of each of the plurality of first gas supply channels and the first gas common channel and communicating each of the plurality of first gas supply channels with the first gas common channel;
A common channel cover for sealing an upper portion of the first gas common flow path to provide a first gas buffering space communicating with each of the plurality of common connection flow paths; And
And a first gas injection port inserted in the common channel cover for injecting the first gas into the first gas buffering space. A process chamber;
A chamber lid covering the top of the process chamber;
A substrate supporting means installed inside the process chamber to support the substrate; And
And gas injection means coupled to a lower surface of the chamber lid to face the substrate support means,
Wherein the gas injection means comprises the gas injection device according to any one of claims 1 to 3, and claims 5 to 7. 9. The method of claim 8,
And a second gas buffering space provided between the lower surface of the chamber lid and the body of the gas injecting unit to supply a second gas from the outside. 10. The method of claim 9,
Further comprising a baffle plate coupled to a bottom surface of the chamber lid to adjust a flow of a second gas supplied from the outside to supply the second gas to the second gas buffering space.

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