KR20140148128A - Apparatus for processing substrate - Google Patents

Abstract

The present invention provides an apparatus for processing a substrate which can prevent a pattern corresponding to a gas injection hole shape while processing a substrate from being printed on a substrate, and can improve the deposition uniformity of a thin film. The apparatus for processing a substrate according to the present invention comprises: a process chamber; a chamber lid for covering the top of the process substrate; a substrate support means which is installed inside the process chamber and supports a substrate; and a gas injection means which is attached to the bottom of the chamber lid facing the substrate support means, and sprays first and second gases which are separately supplied from the outside onto the substrate. The gas injection means includes: multiple first gas injection holes which are formed in a zigzag form along a first direction among the first direction and a second direction which are perpendicular to each other, and sprays the first gas onto the substrate; and multiple second gas injection holes which are placed in between adjacent first gas injection holes along the second direction, and are formed in a zigzag form along the first direction, and sprays the second gas around the first gas sprayed from each of the first gas injection holes.

Description

[0001] APPARATUS FOR PROCESSING SUBSTRATE [0002]

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of improving deposition uniformity of a thin film deposited on a substrate.

Generally, in order to manufacture a flat panel display, a semiconductor device, a solar cell, etc., a predetermined thin film layer, a thin film circuit pattern, or an optical pattern must be formed on the surface of the substrate. For this purpose, A semiconductor manufacturing process such as a thin film deposition process, a photolithography process for selectively exposing a thin film using a photosensitive material, and an etching process for forming a pattern by selectively removing a thin film of an exposed portion are performed.

Such a semiconductor manufacturing process is performed inside a substrate processing apparatus designed for an optimum environment for the process, and recently, a substrate processing apparatus for performing a deposition or etching process using plasma is widely used.

1 is a schematic view for explaining a conventional substrate processing apparatus.

Referring to FIG. 1, a conventional substrate processing apparatus includes a chamber 10, a chamber lid 20, a substrate holding means 30, and a gas injection means 40.

The chamber 10 provides a reaction space for the substrate processing process. At this time, the bottom surface of one side of the chamber 10 communicates with the exhaust port 12 for exhausting the reaction space.

The chamber lid 20 is installed on the upper portion of the chamber 10 to seal the reaction space, and is connected to the plasma power supply unit 22 through a power cable.

Further, the central portion of the chamber lid 20 communicates with the gas supply pipe 24 that supplies the process gas for the substrate processing process.

The substrate supporting means 30 is mounted inside the chamber 10 to support at least one substrate S to be loaded from the outside. This substrate supporting means 30 is electrically grounded via a support shaft 32 which supports the substrate holding means 30 as an opposite electrode opposed to the chamber lid 20. At this time, the support shaft 32 is surrounded by the support shaft 32 and the bellows 34 which seals the lower surface of the chamber 10.

The gas injection means 40 is installed at the bottom of the chamber lid 20 so as to be opposed to the substrate holding means 30. A gas buffer space 42 through which the process gas is supplied from the gas supply pipe 24 passing through the chamber lid 20 is formed between the gas injection means 40 and the chamber lid 20. [ At this time, the process gas is mixed with a source gas and a reactive gas for forming a predetermined thin film on the substrate (S), and is supplied to the gas buffer space (42). The gas injection means 40 injects the process gas into the reaction space through a plurality of gas injection holes 44 communicated with the gas buffer space 42.

Such a conventional substrate processing apparatus loads the substrate S into the substrate holding means 30 and then supplies plasma power to the chamber lid 20 while spraying a predetermined process gas into the reaction space of the chamber 10 To form a plasma discharge P between the gas injection means 40 and the substrate support means 30 to vaporize the molecules of the process gas ionized by the plasma discharge P onto the substrate S, A predetermined thin film is formed.

However, the conventional substrate processing apparatus has the following problems.

First, there is a problem that a pattern corresponding to the shape of the gas injection hole 44 is transferred to the substrate S during a substrate processing process.

Secondly, since the source gas and the reactive gas are injected on the substrate S, there is a problem that the uniformity of deposition of the thin film deposited on the substrate S is uneven.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a substrate processing apparatus capable of improving uniformity of deposition of a thin film while preventing transfer of a pattern corresponding to the shape of a gas- It is a technical task.

Other features and advantages of the invention will be set forth in the description which follows, or may be obvious to those skilled in the art from the description and the claims.

According to another aspect of the present invention, there is provided a substrate processing apparatus comprising: a processing chamber; A chamber lid covering the top of the process chamber; A substrate supporting means installed inside the process chamber to support the substrate; And gas injection means for injecting first and second gases individually supplied from the outside onto the substrate, the gas injection means being coupled to a lower surface of the chamber lid facing the substrate support means, A plurality of first gas injection holes formed in a zigzag shape along a first direction of the first and second directions to inject the first gas onto the substrate; And a plurality of second gas injection holes formed in a zigzag shape along the first direction and disposed between the adjacent first gas injection holes with respect to the second direction, And a plurality of second gas injection holes for injecting two gases.

Wherein the gas injection means comprises a frame coupled to a lower surface of the chamber lid through a second gas buffering space through which the second gas is supplied from the outside; A plurality of first gas supply passages formed in the frame and supplied with the first gas; A plurality of first gas injection holes formed in the frame so as to communicate with corresponding gas supply channels of the plurality of first gas supply channels; And the plurality of second gas injection holes formed in the frame to communicate with the second gas buffering space.

Wherein each of the plurality of first gas supply channels is formed so as to pass through one side and the other side of the frame, and both ends of each of the plurality of first gas supply channels are sealed by a sealing member.

And the gas injection means further comprises a first gas common supply member formed on the frame for primarily buffering the first gas supplied from the outside and supplying the first gas to each of the plurality of first gas supply channels do.

Wherein the first gas common supply member comprises: a first gas common flow channel formed to be concave from an upper surface of the frame so as to cross each of the plurality of first gas supply channels; A plurality of common connection flow paths formed at intersections of each of the plurality of first gas supply channels and the first gas common channel and communicating each of the plurality of first gas supply channels with the first gas common channel; A flow path cover sealing the upper portion of the first gas common flow path to provide a first gas buffering space communicating with each of the plurality of common connection flow paths; And a first gas injection port inserted in the flow path cover and injecting the first gas into the first gas buffering space.

Wherein each of the plurality of first gas injection holes is disposed in a first zigzag shape along the first direction while being arranged to have a first pitch along the second direction, And a second zigzag shape along the first direction with respect to a center line of one pitch.

And the angle of the second zigzag shape is smaller than the angle of the first zigzag shape.

Wherein each of the plurality of first gas injection holes is shifted laterally by a first distance from a first reference line of the first pitch and each of the plurality of second gas injection holes is shifted by a second reference line And the second distance is shifted to the left and right by a second distance. Here, the first distance is equal to or smaller than the second distance.

Wherein each of the plurality of first gas injection holes is arranged in a zigzag manner along the first direction while being arranged to have a first pitch along the second direction, 1 gas ejection holes are arranged in two rows between the first pitches so as to have the same zigzag shape.

The pitch between the first and second gas injection holes adjacent to each other in the first direction, the pitch between the adjacent first gas injection holes in the second direction, and the pitch between the adjacent second gas injection holes in the second direction are all the same .

The substrate processing apparatus further comprises a baffle plate disposed between the lower surface of the chamber lid and the frame and adapted to regulate the flow of the second gas supplied from the outside to the second gas buffering space .

According to the solution of the above-mentioned problems, the substrate processing apparatus according to the present invention has the following effects.

First, a plurality of first gas injection holes for injecting a first gas and a plurality of second gas injection holes for injecting a second gas are arranged in a zigzag manner, It is possible to prevent the pattern from being transferred to the substrate.

Second, because the first and second gases for thin film deposition are individually sprayed, the uniformity of deposition of the thin film can be improved through individual control of each of the first and second gases.

1 is a schematic view for explaining a conventional substrate processing apparatus.
2 is a view for explaining a substrate processing apparatus according to an embodiment of the present invention.
Fig. 3 is a view for explaining the gas injection member shown in Fig. 2. Fig.
Fig. 4 is a view for explaining the gas supply passage and the common gas passage shown in Fig. 3;
5 is a view for explaining an arrangement structure of a gas injection hole according to an embodiment of the present invention.
6 is a view for explaining an arrangement structure of a gas injection hole according to another embodiment of the present invention.
7 is a view for explaining an arrangement structure of a gas injection hole according to another embodiment of the present invention.

The meaning of the terms described herein should be understood as follows.

The word " first, "" second," and the like, used to distinguish one element from another, are to be understood to include plural representations unless the context clearly dictates otherwise. The scope of the right should not be limited by these terms.

It should be understood that the terms "comprises" or "having" does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

It should be understood that the term "at least one" includes all possible combinations from one or more related items. For example, the meaning of "at least one of the first item, the second item and the third item" means not only the first item, the second item or the third item, but also the second item and the second item among the first item, Means any combination of items that can be presented from more than one.

The term "on" means not only when a configuration is formed directly on top of another configuration, but also when a third configuration is interposed between these configurations.

Hereinafter, preferred embodiments of a substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 is a view for explaining a substrate processing apparatus according to an embodiment of the present invention, FIG. 3 is a view for explaining a gas injection member shown in FIG. 2, FIG. 4 is a cross- And is a view for explaining a common gas flow path.

2 to 4, a substrate processing apparatus according to an embodiment of the present invention includes a process chamber 110, a chamber lid 130, a substrate supporting means 150, and a gas injection means 170, do.

The process chamber 110 is formed in a "U" A substrate inlet / outlet (not shown) is formed at one side of the process chamber 110, and at least one exhaust port 112 for exhausting gas in the process space is formed on the bottom surface.

The chamber lid 130 is installed on the top of the process chamber 110 to cover the top of the process chamber 110. At this time, an insulating member 120 such as an O-ring or the like is interposed in the joint portion between the process chamber 110 and the chamber lead 130. The insulating member 120 seals between the chamber lid 130 and the process chamber 110 and electrically isolates the chamber lid 130 from the process chamber 110.

A second gas supply pipe 140 connected to an external second gas supply device (not shown) is installed on the upper surface of the chamber lid 130. On the lower surface of the chamber lid 130, concave grooves 133 are formed so as to have stepped portions 131 in a stepped shape. A second gas inlet port communicating with the second gas supply pipe 140 is formed in the groove 133.

A baffle plate 190 may be mounted on the step 131. In this case, a second gas injection space (GIS) through which the second gas is injected from the second gas supply pipe 140 is provided between the lower surface of the chamber lid 130 and the baffle plate 190. Accordingly, the baffle plate 190 can control the flow of the second gas supplied to the gas injection means 170 by spreading and distributing the second gas injected into the second gas injection space (GIS) do. To this end, a plurality of regular or irregularly formed gas distribution slits or holes are formed in the baffle plate 190 to diffuse and distribute the second gas. The baffle plate 190 may be omitted.

The chamber lid 130 is connected to an external power supply unit 300 through a power cable 310 to receive plasma power from the power supply unit 300. Here, the power cable 310 may be provided with an impedance matching circuit 320. The impedance matching circuit 320 may include at least two impedance elements (not shown) for matching the source impedance and the load impedance of the plasma power supplied to the chamber lead 130, A capacitor, and a variable inductor.

The substrate supporting means 150 supports the substrate S which is installed in the process chamber 110 and is carried into the process space by a substrate transfer device (not shown). In this case, the substrate supporting means 150 may be installed in the process chamber 110 so that the substrate supporting means 150 can move up and down in the process chamber 110. In this case, 200 to move up and down to a process position or a substrate loading and unloading position in accordance with the lifting and lowering of the lifting shaft 200 according to the driving of the lifting device (not shown). Between the lifting shaft 200 and the process chamber 110 is sealed by the bellows 210.

The gas injecting means 170 injects first and second gases individually supplied from the outside onto the substrate S by being coupled to the lower surface of the chamber lid 130 so as to face the substrate supporting means 150 .

The gas injection means 170 according to one embodiment includes a frame 171, a plurality of first gas supply channels 172, a plurality of first gas injection holes 173, and a plurality of second gas injection holes 174, As shown in FIG.

The frame 171 is made of a metal and is coupled to the lower surface of the chamber lid 130 so as to face the substrate supporting means 150. At this time, a second gas buffering space GBS2 is provided between the frame 171 and the chamber lid 130, from which a second gas is supplied from the outside. The second gas buffering space GBS2 may be provided between the upper surface of the frame 171 and the lower surface of the chamber lid 130 or between the upper surface of the frame 171 and the baffle plate 190. [ have.

The second gas may be a source gas including a main component of the thin film to be formed on the substrate S. In this case, the second gas may be at least one selected from the group consisting of an oxide film, a hydroquinone oxide film, a thin film of a high-K material, silicon (Si), a titanium group element (Ti, Zr, Hf, Gas. For example, a source gas containing a silicon (Si) material may be a silicon compound such as silane (SiH4), disilane (Si2H6), trisilane (Si3H8), tetraethylorthosilicate (TEOS), dichlorosilane (DCS) Hexachlorosilane, Tri-dimethylaminosilane (TriDMAS), and Trisilylamine (TSA).

Each of the plurality of first gas supply channels 172 is formed at a predetermined interval in the frame 171 so as to be parallel to the first direction Y so that a first gas supplied from the outside is supplied to the plurality of first gas- Holes 173, respectively. Each of the plurality of first gas supply channels 172 is formed so as to penetrate one side surface and the other side surface of the frame 171 by drilling and then is sealed by a sealing member 172a such as a welding or sealing cap Both end portions are formed by being sealed. Each of the plurality of first gas supply passages 172 is connected to the corresponding first gas injection hole 173 and is connected to the first gas injection holes 173 in the first direction Y At regular intervals or predetermined intervals along a second direction X perpendicular to the horizontal direction.

The first gas may be a reactive gas that reacts with the source gas to form a thin film. In this case, the first gas may be hydrogen (H2), nitrogen (N2), nitrous oxide (N2O), oxygen (O2), ammonia (NH3) And may be selected depending on the material of the thin film to be deposited. Further, the first gas may be supplied together with an auxiliary gas for plasma ignition. In this case, the auxiliary gas may be a non-reactive gas such as argon (Ar), xenon (Ze), or helium It can be a gas.

Each of the plurality of first gas injection holes 173 is perforated in the vertical direction Z from the lower surface of the frame 171 so as to communicate with the corresponding one of the plurality of first gas supply channels 172, The first gas supplied from the gas supply passage 172 is sprayed downward onto the substrate S. That is, the plurality of first gas injection holes 173 are formed in the lower portion of each of the plurality of first gas supply channels 172, and the plurality of gas injection holes 173 formed in the lower portion of one gas supply channel 172 1 gas injection holes 173 are arranged in a zigzag manner along the first direction Y which is the longitudinal direction of the gas supply passage 172. [

Each of the plurality of first gas injection holes 173 according to one embodiment includes a first gas injection hole (not shown) vertically perforated so as to have an inclined surface whose diameter changes from the lower surface of the frame 171 toward the gas supply passage 172 And a first gas connection channel 173b formed to communicate the first gas injection hole 173a and the gas supply channel 172 with each other.

The first gas injection opening 173a is formed so as to have an isosceles triangular cross-section from the lower surface of the frame 171, a trapezoidal cross-section whose upper side is smaller than the lower side, and an isosceles triangular cross- However, the present invention is not limited to this, and may be configured to be optimized to at least one of an injection area, an injection angle, and an injection amount of the first gas to be injected.

The first gas connecting passage 173b according to an exemplary embodiment is formed by a drilling process so as to communicate with the center portion of the upper surface of the first gas injection opening 173a between the central portion of the first gas injection opening 173a and the gas supply passage 172 Lt; / RTI > In this case, the first gas injection port 173a and the first gas communication path 173b communicated with each other are perforated perpendicularly to the frame 171 so as to have a funnel shape inverted upside down.

The first gas communication passage 173b according to another example is formed by drilling so as to communicate with the inclined surface of the first gas injection port 173a and between the one side inclined surface of the first gas injection port 173a and the gas supply passage 172 Lt; / RTI > In this case, the central portions of the first gas injection port 173a and the first gas communication path 173b, which communicate with each other, are staggered by a predetermined distance with reference to the vertical direction of the frame 171. The path of the first gas supplied to the first gas injection port 173a is changed by the inclined surface of the first gas injection port 173a by the first gas connection passage 173b according to another example, So that the shape of the gas injection hole 173a due to the vertical spraying of the first gas can be prevented from being transferred to the substrate.

Each of the plurality of second gas injection holes 174 is pierced in the vertical direction Z to the frame 171 to communicate with the second gas buffering space GBS2, To the periphery of the first gas injected from each of the plurality of first gas injection holes (173). That is, the plurality of second gas injection holes 174 are arranged between the adjacent first gas injection holes 173 with respect to the second direction X, .

Each of the plurality of second gas injection holes 174 according to one embodiment includes a second gas injection hole 174a vertically perforated so that the diameter thereof changes from the lower surface of the frame 171 toward the second gas buffering space GBS2 And a second gas connection passage 174b formed to communicate with the second gas injection opening 174a and the second gas buffering space GBS2.

The second gas injection opening 174a is formed so as to have an isosceles triangular cross section from the lower surface of the frame 171 and a cross section having a trapezoidal cross section whose upper side is smaller than the lower side and the isosceles triangular cross section However, the present invention is not limited thereto, and may be configured to be optimized to at least one of the injection area, the injection angle, and the injection amount of the second gas to be injected.

The second gas communication passage 174b may be drilled from the upper surface of the frame 171 by drilling so as to communicate with the center of the upper surface of the second gas injection hole 174a. In this case, the second gas injection port 174a and the second gas connection channel 174b communicated with each other are perforated perpendicularly to the frame 171 so as to have a funnel shape inverted up and down.

The second gas connecting passage 174b according to another example may be drilled from the upper surface of the frame 171 by drilling so as to communicate with the inclined surface of the second gas injection hole 174a. In this case, the central portions of the second gas injection port 174a and the second gas connection channel 174b, which communicate with each other, are staggered by a predetermined distance with reference to the vertical direction of the frame 171. [ The path of the second gas supplied to the second gas injection port 174a by the second gas connection passage 174b according to another example is changed by the inclined surface of the second gas injection port 174a, The shape of the gas injection hole 174a due to the vertical injection of the second gas can be prevented from being transferred to the substrate.

The gas injection means 170 further comprises a first gas common supply member for first buffering the first gas supplied from the outside and supplying the first gas to each of the plurality of first gas supply channels 172 .

The first gas common supply member may include a first gas common channel 175, a plurality of common connection channels 176, a common channel cover 177, and a first gas injection port 178.

As shown in FIG. 4, the first gas common channel 175 is formed so as to extend from one side or both upper sides of the frame 171 so as to intersect one side or both sides of each of the plurality of first gas supply channels 172 And is formed concavely so as to have a width and a depth. That is, each of the side surfaces of the concave first gas common flow channel 175 is formed with a stepped surface.

Each of the plurality of common connection flow paths 176 is formed perpendicularly to the intersection of each of the plurality of first gas supply flow paths 172 and the first gas common flow path 175, To each of the plurality of first gas supply channels (172). Each of the plurality of common connection flow paths 176 may be formed to communicate with the first gas supply flow path 172 by drilling the bottom surface of the first gas common flow path 175.

The common channel cover 177 is inserted into the first gas common channel 175 to seal the upper portion of the first gas common channel 175 so that the first gas common channel 175 is filled with the first gas buffering space GBS1). That is, the common channel cover 177 is seated on a stepped surface formed on each side of the first gas common channel 175 to seal the upper portion of the first gas common channel 175. Accordingly, the first gas buffering space GBS1 is provided between the bottom surface of the first gas common flow path 175 and the lower surface of the common flow path cover 177. A sealing member (not shown) for closing (or sealing) the first gas buffering space GBS1 may be interposed between the common channel cover 177 and the first gas common channel 175.

The first gas injection port 178 injects a first gas supplied from an external first gas supply device (not shown) into the first gas buffering space GBS1 through the common channel cover 177. [ The first gas injection port 178 passes through the port installation groove 135 formed in the chamber lid 130 and passes through the common channel cover 130 overlapping the middle portion of the first gas buffering space GBS1. 177 and the upper surface of the frame 171. Accordingly, the first gas is primarily diffused and buffered in the first gas buffering space GBS1, and then the first gas is supplied to the plurality of first gas supply channels 172 through each of the plurality of common connection channels 176. [ And the second gas injection holes 174 are formed on the substrate S through the plurality of first gas injection holes 173 after the second gas injection holes 174 are diffused and buffered, And is sprayed around the gas.

According to the present invention, since the plurality of first and second gas injection holes 173 and 174 are arranged in a zigzag manner, a pattern corresponding to the shape of each gas injection hole is formed on the substrate S It can be prevented from being transferred. The arrangement structure of each of the first and second gas injection holes 173 and 174 disposed in the zigzag shape may be modified into various shapes as shown in FIGS.

5 is a view for explaining an arrangement structure of a gas injection hole according to an embodiment of the present invention.

5, the arrangement of the gas injection holes according to the embodiment of the present invention is such that each of the first and second gas injection holes 173 and 174 is arranged in a zigzag manner along the first direction Y .

Specifically, in the arrangement structure of the gas injection holes according to the embodiment of the present invention, each of the plurality of first gas injection holes 173 may have a first pitch P1 along the second direction X (Z1) along the first direction (Y). For example, each of the first gas injection holes 173 adjacent to the upper and lower sides is shifted leftward and rightward by a first distance d1 from the first reference line CL1 of the first pitch P1, Each of the gas injection holes 173 is arranged in the first zigzag shape Z1 along the first direction Y. [ Accordingly, each of the first gas injection holes 173 adjacent to the upper and lower sides is overlapped with each other by more than half with respect to the first direction (Y).

Each of the plurality of second gas injection holes 174 is disposed between the adjacent first gas injection holes 173 with respect to the second direction X, And are arranged in a zigzag form Z2. For example, each of the second gas injection holes 174 adjacent to the upper and lower sides may have a second distance d2 that is longer than the first distance d1 at a second reference line CL2 that is a center line of the first pitch P1 ) So that each of the plurality of second gas injection holes 174 is disposed in the second zigzag shape Z2 along the first direction Y. [ Here, the angle? 2 of the second zigzag shape Z2 may be smaller than the angle? 1 of the first zigzag shape Z1. Accordingly, each of the plurality of second gas injection holes 174 is arranged in the second zigzag shape Z2 so as to be adjacent to the first gas injection holes 173 arranged in the first zigzag shape Z1 Each of the first and second gas injection holes 173 and 174 adjacent to each other along the second direction X constitutes one process gas injection group and the process gas injection group has a first direction Y And are arranged in a zigzag manner.

6 is a view for explaining an arrangement structure of a gas injection hole according to another embodiment of the present invention, which is a modification of the arrangement structure of each of the plurality of second gas injection holes. Accordingly, only the arrangement structure of each of the plurality of second gas injection holes will be described below.

6, each of the plurality of second gas injection holes 174 is disposed between the adjacent first gas injection holes 173 with respect to the second direction X, Y in the first zigzag form Z1. For example, each of the upper and lower second gas injection holes 174 is shifted leftward and rightward by the first distance d1 from the second reference line CL2, which is the center line of the first pitch P1, Each of the plurality of second gas injection holes 174 is arranged in the first zigzag shape Z1 along the first direction Y. [ As a result, each of the plurality of second gas injection holes 174 is disposed in the same first zigzag shape Z1 as each of the plurality of first gas injection holes 173.

7 is a view for explaining an arrangement structure of a gas injection hole according to another embodiment of the present invention, which is a modification of the arrangement structure of each of the plurality of second gas injection holes. Accordingly, only the arrangement structure of each of the plurality of second gas injection holes will be described below.

7, each of the plurality of second gas injection holes 174 is arranged in two rows between adjacent first gas injection holes 173 with respect to the second direction X, Are arranged in a first zigzag form (Z1) along the direction (Y). For this, the first pitch P1 between adjacent first gas injection holes 173 arranged in the first direction X is set to be three times larger than the pitch between the second gas injection holes 173, The pitch between the first and second gas injection holes 173 and 174 along the first and second directions Y and X is set to be equal to 1/3 of the first pitch P1. Accordingly, each of the plurality of second gas injection holes 174 is arranged in two rows with the first zigzag shape Z1 between the first gas injection holes 173.

The thin film deposition process using the substrate processing apparatus according to the embodiment of the present invention will be described briefly as follows.

First, a plurality of substrates S or one large-area substrate S are loaded on the substrate support means 150 and then placed thereon.

Then, the first gas is injected into the first gas buffering space GBS1 of the gas injection means 170 through the first gas injection port 178 and the second gas is injected through the second gas supply pipe 140 2 gas is injected into the gas buffering space (GBS2). Accordingly, the second gas is injected onto the substrate S through the second gas buffering space GBS2 and the plurality of second gas injection holes 174, respectively. At the same time, the first gas flows through the first gas buffering space (GBS1), the plurality of first gas supply channels (172), and the plurality of first gas injection holes (173) The gas is injected onto the periphery of the second gas injected in each of the gas injection holes 174 and the substrate S. [

The plasma power is supplied to the chamber lid 130 through the power supply means 300 and the plasma power is supplied to the gas injection means 170 through the chamber lid 130 while injecting the first and second gases . Thus, a plasma is formed between the substrate supporting means 150 and the gas injection means 170.

Therefore, the first gas or the first and second gases injected from the gas injection means 170 are activated by the plasma and are sprayed onto the substrate S, A predetermined thin film is deposited by the reaction of the two gases.

The substrate processing apparatus according to the embodiment of the present invention includes a plurality of first gas injection holes 173 for injecting the first gas and a plurality of second gas injection holes 174 for injecting the second gas, The first and second gas ejection regions of the first and second gases are overlapped with each other in the zigzag manner so that the gas injection holes It is possible to prevent a pattern corresponding to each shape from being transferred to the substrate S. [

In addition, since the substrate processing apparatus according to the embodiment of the present invention separately injects the first and second gases for thin film deposition, the uniformity of the deposition of the thin film can be improved through the individual control of each of the first and second gases .

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents. Will be clear to those who have knowledge of.

110: process chamber 130: chamber lead
140: second gas supply pipe 150: substrate holding means
170: gas injection means 171: frame
172: first gas supply passage 173: first gas injection hole
174: second gas injection hole 175: first gas common flow channel
176: common connection channel 177: channel cover
178: first gas injection port 190: baffle plate

Claims (12)

A process chamber;
A chamber lid covering the top of the process chamber;
A substrate supporting means installed inside the process chamber to support the substrate;
And gas injection means coupled to the lower surface of the chamber lid facing the substrate holding means for injecting first and second gases separately supplied from the outside onto the substrate,
Wherein the gas-
A plurality of first gas injection holes formed in a zigzag shape along a first direction of the first and second directions perpendicular to each other to inject the first gas onto the substrate; And
Wherein the second gas injection holes are formed in a zigzag shape along the first direction and disposed between the adjacent first gas injection holes with reference to the second direction, And a plurality of second gas ejection holes for ejecting gas. The method according to claim 1,
Wherein the gas-
A frame coupled to a lower surface of the chamber lid with a second gas buffering space through which the second gas is supplied from the outside;
A plurality of first gas supply passages formed in the frame and supplied with the first gas;
A plurality of first gas injection holes formed in the frame so as to communicate with corresponding gas supply channels of the plurality of first gas supply channels; And
And a plurality of second gas injection holes formed in the frame to communicate with the second gas buffering space. 3. The method of claim 2,
Wherein each of the plurality of first gas supply passages is formed so as to pass through one side and the other side of the frame,
Wherein both ends of each of the plurality of first gas supply passages are sealed by a sealing member. 3. The method of claim 2,
And the gas injection means further comprises a first gas common supply member formed on the frame for primarily buffering the first gas supplied from the outside and supplying the first gas to each of the plurality of first gas supply channels . 5. The method of claim 4,
Wherein the first gas common supply member comprises:
A first gas common flow channel recessed from an upper surface of the frame so as to intersect each of the plurality of first gas supply channels;
A plurality of common connection flow paths formed at intersections of each of the plurality of first gas supply channels and the first gas common channel and communicating each of the plurality of first gas supply channels with the first gas common channel;
A flow path cover sealing the upper portion of the first gas common flow path to provide a first gas buffering space communicating with each of the plurality of common connection flow paths; And
And a first gas injection port inserted in the flow path cover for injecting the first gas into the first gas buffering space. 6. The method according to any one of claims 1 to 5,
Wherein the plurality of first gas injection holes are arranged in a first zigzag shape along the first direction while being arranged to have a first pitch along the second direction,
Wherein the plurality of second gas injection holes are arranged in a second zigzag shape along the first direction with respect to a center line of the first pitch. The method according to claim 6,
And the angle of the second zigzag shape is smaller than the angle of the first zigzag shape. 8. The method of claim 7,
The plurality of first gas injection holes are laterally shifted by a first distance from a first reference line of the first pitch,
Wherein the plurality of second gas injection holes are shifted left and right by a second distance from a second reference line that is a center line of the first pitch. 9. The method of claim 8,
Wherein the first distance is equal to or smaller than the second distance. 6. The method according to any one of claims 1 to 5,
Wherein each of the plurality of first gas injection holes is arranged in a zigzag manner along the first direction while being arranged to have a first pitch along the second direction,
Wherein each of the plurality of second gas injection holes is arranged in two rows between the first pitches so as to have the same zigzag shape as the plurality of first gas injection holes. 11. The method of claim 10,
The pitch between the first and second gas injection holes adjacent to each other in the first direction, the pitch between the adjacent first gas injection holes in the second direction, and the pitch between the adjacent second gas injection holes in the second direction are all the same And the substrate processing apparatus. 6. The method according to any one of claims 2 to 5,
And a baffle plate disposed between the lower surface of the chamber lid and the frame for controlling the flow of the second gas supplied from the outside to the second gas buffering space. .

Images