JP2012519956A - Gas distribution apparatus and substrate processing apparatus having the same - Google Patents

Abstract

  The present invention relates to a gas distribution apparatus and a substrate processing apparatus including the gas distribution apparatus, and includes at least two types of a first gas distribution unit that injects at least two kinds of process gases onto a substrate via different routes. A second gas distribution unit that injects a process gas having a decomposition temperature higher than the average decomposition temperature of the process gas onto the substrate, and the first gas distribution unit is divided into at least two or more. Provided is a gas distribution device that is arranged around a second gas distribution unit and can be coupled and separated from each other, and a substrate processing apparatus including the same.

Description

  The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus including a gas distribution device that supplies a source material of binary system or higher.

  Generally, in order to manufacture a semiconductor device, a display device and a thin film solar cell, a thin film deposition process for depositing a thin film of a specific material on a substrate, a selected region in the thin film is exposed using a photosensitive material. Alternatively, a photolithography process for concealing, an etching process for removing and patterning a thin film in a selected region, and the like are performed. Among these processes, the thin film deposition process and the etching process are performed in a substrate processing apparatus optimized in a vacuum state.

  In a substrate processing apparatus, a gas distribution device is used to uniformly distribute a process gas inside a process chamber having a reaction space. Usually, a chemical vapor deposition (CVD) process is used as the main method for depositing a thin film on a substrate. When using a CVD process, the temperature of the gas distribution device rises and the process gas decomposes and reacts between the process chamber lid and the gas distribution device or inside the gas distribution device to generate powder or foreign matter. There is. For example, when a large number of process gases are simultaneously supplied to the process chamber to form a compound thin film of two or more systems on the substrate, a large number of process gases supplied to the gas distribution device react inside the gas distribution device. Foreign matter may be generated. Such a foreign matter causes a problem that the injection hole of the gas distribution device is blocked or the foreign matter is adsorbed on the substrate, thereby changing the element characteristics.

  For this reason, the gas distribution device has a multi-layer structure to eliminate the generation of foreign matters. That is, the interior of the gas distribution device is partitioned into an upper space and a lower space, a certain process gas is provided in the upper space, and another process gas different from this is provided in the lower space. The gas phase reaction between the process gases inside is prevented. This type of gas distribution apparatus is produced by appropriately arranging a plurality of pin-type tubes and connecting them by brazing several times. However, as the area of the gas distribution device increases, the number of tubes also increases, and the probability that defects will occur at the time of joining by brazing increases. Further, thermal deformation occurs due to repeated brazing, and there is a possibility that stress is inherent in the brazed portion and leakage occurs.

  In addition, the decomposition efficiency is lowered due to the difference in decomposition temperature between a large number of process gases, and there is a disadvantage that the process gas is decomposed before being injected into the process chamber. As a result, the thin film deposition rate is lowered, resulting in the inconvenience that the uniformity of the thin film is lowered and the amount of process gas used is increased to increase the process cost. In addition, there is a problem in that maintenance costs increase due to an increase in the amount of reaction by-products.

  The present invention includes a first gas distribution plate having a plurality of passage holes made by excavation or plate processing, and a plurality of nozzles made by combining a plurality of tubes and communicating with the plurality of passage holes. Provided are a gas distribution device capable of independently and independently injecting two or more kinds of gases with a second gas distribution plate disposed, and a substrate processing apparatus including the same.

  The present invention also provides a gas distribution apparatus in which a temperature measurement unit is provided on a gas distribution plate having a plurality of injection nozzles, and a substrate processing apparatus including the same, in order to adjust the temperature of the refrigerant to an appropriate temperature.

  Furthermore, the present invention provides a gas distribution device capable of preventing degradation in decomposition efficiency due to a decomposition temperature difference between a plurality of process gases and preventing the process gas from being decomposed before injection, and a substrate processing apparatus including the same.

  Furthermore, the present invention provides a gas distribution device that can be combined and separated from each other by dividing the gas distribution device into a plurality of gas distribution devices, and a substrate processing apparatus including the same.

  A substrate processing apparatus according to an embodiment of the present invention includes a first gas distribution unit that injects at least two kinds of process gases onto a substrate through different routes, and a decomposition temperature of the at least two kinds of process gases. A second gas distribution unit that injects a process gas having a decomposition temperature higher than the average of the above onto the substrate, wherein the first gas distribution unit is divided into at least two and the second gas distribution unit. Are arranged around the gas distribution part, and can be coupled and separated from each other.

  In the substrate processing apparatus according to the present invention, the first gas distribution section is connected to a first gas introduction pipe for introducing a first process gas, and a plurality of first passages for allowing the first process gas to pass therethrough. A first gas distribution plate having holes and a second gas introduction pipe for introducing a second process gas are connected and aligned with the plurality of first passage holes to pass through the first process gas. A second gas distribution plate having a plurality of second passage holes and a plurality of third passage holes for allowing the second process gas to pass through, and aligned with the plurality of second and third passage holes. A plurality of first and second nozzles for injecting the first and second process gases, respectively, and a third gas distribution plate having a space in which a refrigerant flows.

  In the substrate processing apparatus according to the present invention, the first gas distribution plate is installed in the space having a space for accommodating the first process gas supplied from the first gas introduction pipe, and the space. Distribution means for uniformly distributing the first process gas introduced from the first gas introduction pipe.

  In the substrate processing apparatus according to the present invention, the distribution means includes a plate and a plurality of supply holes formed by perforating the plate.

  In the substrate processing apparatus according to the present invention, the second gas distribution plate is connected to the second gas introduction pipe, and a housing for providing a space for accommodating the second process gas; A plurality of pillars having a second passage hole therein; and a plurality of third passage holes formed by drilling a lower portion of the housing.

  In the substrate processing apparatus according to the present invention, the second gas distribution plate is partitioned by a partition provided in the space, a side wall of the housing, and the partition, and is supplied from the second gas introduction pipe. And a buffer space for accommodating a second process gas.

  In the substrate processing apparatus according to the present invention, the second gas distribution plate includes a supply hole formed in the partition wall for supplying the second process gas in the buffer space to the space.

  In the substrate processing apparatus according to the present invention, the third gas distribution plate includes a plurality of first and second nozzles, a housing having the space through which the refrigerant flows, and a connection to the housing. A refrigerant flow pipe for supplying or discharging the refrigerant.

  In the substrate processing apparatus according to the present invention, the housing includes a side wall that surrounds a side surface of the space, an upper plate that is located above the side wall and communicates with the plurality of first and second nozzles, A lower plate located in the lower portion and communicated with the plurality of first and second nozzles.

  In the substrate processing apparatus according to the present invention, the housing includes a side wall surrounding a side surface of the space and a lower plate on which the plurality of first and second nozzles that are in direct contact with the second gas distribution plate are located. .

  The substrate processing apparatus according to the present invention further includes a temperature measuring device disposed on at least one of the second gas distribution plate and the third gas distribution plate.

  In the substrate processing apparatus according to the present invention, the second gas distribution unit is provided at a lower center portion of the chamber lid, and the at least two or more first gas distribution units are centered on the second gas distribution unit. Provided under the lid.

  In the substrate processing apparatus according to the present invention, at least one or more of the at least two or more first gas distribution units are arranged apart from each other.

  The substrate processing apparatus according to the present invention further includes at least one or more third gas distribution units interposed between the at least two or more first gas distribution units and injecting a purge gas.

  In the substrate processing apparatus according to the present invention, the third gas distribution unit injects the purge gas to the outside of the substrate.

  In the substrate processing apparatus according to the present invention, protrusions are formed on both side surfaces of the at least two first gas distribution units, and grooves corresponding to the protrusions are formed in both side surfaces of the third gas distribution unit. Then, the groove is externally fitted to the protruding portion, and the third gas distribution portion is coupled between the first gas distribution portions.

  In the substrate processing apparatus according to the present invention, at least one of the third gas distribution units is provided with a temperature sensor on the lower side.

  In addition, a substrate processing apparatus according to an embodiment of the present invention includes a chamber having a reaction space, a substrate mounting unit that is positioned in the reaction space of the chamber and on which a plurality of substrates are mounted radially with respect to the center, and at least A first gas distribution section for injecting two or more kinds of process gases onto the substrate via different routes; and a process gas having a decomposition temperature higher than an average decomposition temperature of the at least two kinds of process gases. And a second gas distribution unit that injects the gas into a space between the plurality of substrates, wherein the first gas distribution unit is divided into at least two and the second gas distribution unit And can be coupled and separated from each other.

  In the substrate processing apparatus according to the present invention, the chamber includes a chamber body in which the reaction space is provided, and a chamber lid that seals the reaction space, and the first and second gas distribution units are provided in the chamber lid. Fixed.

  In the substrate processing apparatus according to the present invention, a coolant channel through which the coolant circulates is formed in the chamber lid.

  In the substrate processing apparatus according to the present invention, the first gas distribution section is connected to a first gas introduction pipe for introducing a first process gas, and a plurality of first passages for allowing the first process gas to pass therethrough. A first gas distribution plate having holes and a second gas introduction pipe for introducing a second process gas are connected and aligned with the plurality of first passage holes to pass through the first process gas. A second gas distribution plate having a plurality of second passage holes and a plurality of third passage holes for allowing the second process gas to pass through, and aligned with the plurality of second and third passage holes. A plurality of first and second nozzles for injecting the first and second process gases, respectively, and a third gas distribution plate having a space in which the refrigerant flows.

  In the substrate processing apparatus according to the present invention, the second gas distribution unit includes at least one central injection nozzle disposed in a chamber region corresponding to a central region of the substrate mounting means.

  In the substrate processing apparatus according to the present invention, the second gas distribution unit extends in a space between a central injection nozzle located in a central region of the first gas distribution unit and the first gas distribution unit. An extended injection nozzle; and an extension flow path connected to the central injection nozzle and the extended injection nozzle.

  The substrate processing apparatus according to the present invention includes a flow path switching device that is located in a lower region of the second gas distribution unit and injects a process gas from the second gas distribution unit toward the substrate.

  In the substrate processing apparatus according to the present invention, a part of the flow path switching device is connected to each of the plurality of first gas distribution units, and the fixing plate is located at the center of the plurality of first gas distribution units; An extension channel extending from the central region of the fixed plate toward the substrate mounting means; and a channel switching nozzle provided in a tip region of the extension channel.

  In the substrate processing apparatus according to the present invention, the heating means for heating the process gas ejected from the second gas distribution unit or the plasma for ionizing the process gas ejected from the second gas distribution unit using plasma. A generator is provided.

  The substrate processing apparatus according to the present invention further includes a protruding portion that is provided on the substrate mounting means and is inserted below the second ejecting means between the first ejecting means.

  The substrate processing apparatus including the gas distribution apparatus according to the embodiment of the present invention has the following effects.

  First, two types of process gases are injected simultaneously and independently, and in the gas distribution plate composed of three gas distribution plates, the refrigerant flows through the gas distribution plate having a nozzle for injecting the process gas onto the substrate. By providing the space, it is possible to prevent generation of foreign substances due to decomposition of the process gas and to prevent thermal deformation of the gas distribution device. Two gas distribution plates are manufactured by excavation or plate material processing, and only a gas distribution plate having nozzles is manufactured using a brazing method, thereby realizing a simplified structure and reducing manufacturing costs. Can do.

  A temperature measuring device is installed on the gas distribution plate with nozzles, and the processing operation or substrate processing process is interrupted when the temperature of the gas distribution plate rises above the appropriate temperature during processing by the brazing method or substrate processing process. Give a signal to do. Therefore, since the operation or the substrate processing process can be automatically interrupted by the interruption signal, problems occurring during the manufacturing process or the substrate processing process can be prevented.

  Also, by injecting a process gas having a high decomposition temperature into the space between the substrates, the time to reach the substrate is longer than in the case of injecting directly onto the substrate, and the heat is preheated in the process chamber accordingly. Increasing time increases the decomposition of process gases having high decomposition temperatures. Thereby, the usage-amount of process gas can be reduced and thin film vapor deposition efficiency can be raised.

  Furthermore, the process gas having a high decomposition temperature is cooled by injecting the process gas having a high decomposition temperature among the plurality of process gases through the peripheral region of the injection apparatus in addition to the injection apparatus having a cooling function. Without being injected into the process chamber (ie, the substrate).

  Furthermore, a process gas having a high decomposition temperature is injected into the chamber lid region above the center of the substrate mounting means on which a plurality of substrates are mounted, that is, a region having a relatively high temperature in the gas injection region. By doing so, not only can the amount of use be reduced through preheating of the process gas, but also the efficiency of thin film deposition can be increased.

  Furthermore, a separate flow path switching device can be arranged in a region where a process gas having a high decomposition temperature is injected, and the injected process gas can be directed to the substrate, and the amount of the process gas to the substrate Can be made uniform.

  Furthermore, the present invention provides a gas distribution apparatus that is increased in size with an increase in the size of a process chamber by dividing the second gas distribution section of the gas distribution apparatus into a plurality of parts and making them connectable and disassembling. Fabrication can be performed more easily.

1 is a cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention. 1 is a detailed sectional view of a gas distribution device of a substrate processing apparatus according to a first embodiment of the present invention. It is a disassembled perspective view of the gas distribution apparatus of the substrate processing apparatus by the 1st Embodiment of this invention. It is a manufacture perspective view of the 3rd gas distribution board by a 1st embodiment of the present invention. It is a manufacture perspective view of the 3rd gas distribution board by a 1st embodiment of the present invention. It is a manufacture perspective view of the 3rd gas distribution board by a 1st embodiment of the present invention. It is a top view of the 2nd gas distribution board by a 1st embodiment of the present invention. It is a disassembled perspective view of the gas distribution apparatus by the 2nd Embodiment of this invention. It is a manufacture perspective view of the 3rd gas distribution board by a 2nd embodiment of the present invention. It is a manufacture perspective view of the 3rd gas distribution board by a 2nd embodiment of the present invention. It is a manufacture perspective view of the 3rd gas distribution board by a 2nd embodiment of the present invention. It is a disassembled perspective view of the gas distribution apparatus by the 3rd Embodiment of this invention. It is a top view of the board | substrate mounting means by the 3rd Embodiment of this invention. It is sectional drawing of the substrate processing apparatus by the 4th Embodiment of this invention. It is a top view of the substrate processing apparatus by the 4th Embodiment of this invention. It is sectional drawing of the gas distribution apparatus of the substrate processing apparatus by the 4th Embodiment of this invention. It is a top view of the gas distribution apparatus of the substrate processing apparatus by the 5th Embodiment of this invention. It is a top view of the gas distribution apparatus by 6th Embodiment of this invention. It is a separation perspective view of a gas distribution device by a 6th embodiment of the present invention. It is a joint sectional view of a gas distribution device by a 6th embodiment of the present invention. It is a top view of the gas distribution apparatus by 7th Embodiment of this invention. It is sectional drawing of the gas distribution apparatus of the substrate processing apparatus by other embodiment of this invention. It is sectional drawing of the gas distribution apparatus of the substrate processing apparatus by other embodiment of this invention. It is sectional drawing of the gas distribution apparatus of the substrate processing apparatus by other embodiment of this invention. It is sectional drawing of the gas distribution apparatus of the substrate processing apparatus by other embodiment of this invention. It is sectional drawing of the gas distribution apparatus of the substrate processing apparatus by other embodiment of this invention. It is sectional drawing of the gas distribution apparatus of the substrate processing apparatus by other embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below, but can be realized in different forms, and these embodiments are merely intended to complete the disclosure of the present invention and fully inform the skilled person of the scope of the invention. Is provided for. In the drawings, the same reference numerals indicate the same components.

  FIG. 1 is a cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention. FIGS. 2 and 3 are detailed cross-sectional views of a gas distribution device of a substrate processing apparatus according to the first embodiment of the present invention. It is a disassembled perspective view. 4A to 4C are manufacturing perspective views of the third gas distribution plate according to the first embodiment of the present invention, and FIG. 5 is a plan view of the second gas distribution plate according to the first embodiment of the present invention. FIG.

  Referring to FIGS. 1 to 5, the substrate processing apparatus 110 includes a process chamber 112 that provides a reaction space, a gas distribution apparatus 114 that is located in an upper part of the process chamber 112 and supplies different process gases, and a gas distribution apparatus. Opposite to the apparatus 114, a substrate mounting means 118 on which the substrate 116 is placed, a substrate inlet / outlet 120 for entering / exiting the substrate 116, and an outlet 122 for discharging process gas and by-products in the reaction space are provided.

  The gas distribution device 114 may be connected to the RF power source 124, and a matching device 126 for impedance matching may be disposed between the gas distribution device 114 and the RF power source 124. However, it is possible to use a CVD (Chemical Vapor Deposition) method in which the gas distributor 114 is not connected to the RF power source 124 and a process gas is simply supplied to the reaction space to form a film.

  The process chamber 112 includes a chamber body 128 and a chamber lid 130 that is detachably coupled to the chamber body 110 and seals the reaction space. The chamber body 110 is formed in a cylindrical shape or a polygonal shape with an open top, and the chamber lid 130 is formed in a plate shape having a shape corresponding to the chamber body 110. Although not shown, the chamber lid 130 and the chamber body 110 are coupled by a fixing member via a sealing member, for example, an O-ring or a gasket. Further, as shown in FIG. 2, when the substrate 116 is processed in the reaction space, the temperature of the reaction space is transmitted to the chamber lid 130 coupled to the gas distributor 114, and the temperature of the chamber lid 130 rises. In order to prevent this, a flow path 146 through which the refrigerant circulates by a refrigerant circulation device (not shown) may be provided as temperature adjusting means. While the refrigerant circulates in the flow path 146 provided in the chamber lid 130, the temperature of the chamber lid 130 is prevented from rising as the reaction space rises, and is further provided above or adjacent to the chamber lid 130. It is possible to prevent the peripheral device from rising in temperature.

  As shown in FIG. 1, the substrate mounting means 118 is supported by a support base 132 and is moved up and down by the support base 132. The support table 132 is connected to a driving unit 131 that provides a driving force. Between the support base 132 and the driving means 131, a bellows (not shown) for maintaining airtightness when the support base 132 moves up and down and rotates, and a magnetic seal as a rotation sealing means (not shown). Are concatenated. The substrate mounting means 118 is produced in the same shape as the substrate 116. FIG. 1 shows a substrate mounting means 118 on which a single substrate 116 is placed. In order to place a plurality of substrates 116, the substrate placing means 118 has a substrate 116 placed thereon. A plurality of susceptors, and a plurality of susceptors may be provided, and the disc may have a plurality of insertion openings.

  As shown in FIGS. 2 and 3, the gas distribution device 114 is supplied with a first process gas and contains the first gas distribution plate 134 that allows the first process gas to pass therethrough, and the second process gas. The second gas distribution plate 136 through which the first and second process gases are supplied and the third gas distribution for injecting the first and second process gases toward the substrate mounting table 118 A plate 138.

  The first gas distribution plate 134 has a first gas introduction pipe 134 a that introduces a first process gas through the center of the chamber lid 130, and a first space 160 that accommodates the first process gas. A first housing 134b, a baffle 134c as distribution means for uniformly distributing the first process gas supplied from the first gas introduction pipe 134a inside the first housing 134b, and the first housing A plurality of first passage holes 134d for allowing the first process gas to pass therethrough.

  The second gas distribution plate 136 has a second gas introduction pipe 136a that introduces the second process gas through the chamber lid 130, and a second space 162 that contains the second process gas. The side walls of the housing 136b and the second housing 136b are partitioned by the partition wall 140 and connected to the second gas introduction pipe 136a before the second process gas is supplied to the second space 162. A buffer space 136c that accommodates the process gas, a plurality of second passage holes 136d that communicate with the plurality of first passage holes 134d and allow the first process gas to pass through, and a bottom surface of the second housing 136b. And a plurality of third passage holes 136e for allowing the second process gas to pass therethrough. The buffer space 136c is disposed on the side surface of the second housing 136b, and a supply port 142 is disposed in the partition wall 140 in order to uniformly supply the second process gas to the second space 162. The partition wall 140 is formed inside the side wall at a predetermined distance from the side wall along the side wall of the second housing 136b. A buffer space 136c is formed between the partition wall 140 and the side wall of the second housing 136b, and the buffer space 136c accommodates the second process gas supplied from the second gas introduction pipe. The buffer space 136 c has a circular or polygonal ring shape according to the shape of the gas distribution device 114. However, when a plurality of second gas introduction pipes 136a are arranged and each second gas introduction pipe 136a is connected to a side surface of the second housing 136b, a plurality of buffer spaces 136c that are shielded from each other are formed. It may be formed. The plurality of buffer spaces 136c can communicate with each other. In other words, when the second gas distribution plate 136 is rectangular, one second gas introduction pipe 136a and a buffer space 136c may be provided on each side. The supply port 142 disposed in the partition wall 140 may be continuously formed, and may be formed from a plurality of openings formed in a slit shape having the same height or intermittently extending to form an isolated pattern.

  The third gas distribution plate 138 is formed inside the third housing 138a having the third space 164 in which the refrigerant flows and the third housing 138a, and communicates with each of the plurality of second passage holes 136d. And a plurality of first nozzles 138b for injecting a first process gas, a plurality of second nozzles 138c for injecting a second process gas and a plurality of second nozzles 138c, which are communicated with a plurality of third passage holes 136e 3 and a refrigerant flow pipe 152 that is connected to the housing 138a and circulates the refrigerant. The refrigerant flow pipe 152 includes a refrigerant supply pipe that supplies a refrigerant to the third space 164 and a refrigerant discharge pipe that discharges the refrigerant in the third space 164. The refrigerant flow pipe 152 passes through the chamber lid 130 and is drawn into the process chamber 112 to be connected to the side surface of the third housing 138a. The refrigerant circulates in a refrigerant circulation device (not shown).

  If the process of depositing a thin film on the substrate 116 is performed at a high temperature of about 1000 ° C. or higher in the substrate processing apparatus 110 for a long time, the gas distribution apparatus 114 may overheat to a heat resistant temperature or higher. In particular, the overheating phenomenon occurs severely in the third gas distribution plate 138 of the gas distribution device 114 facing the substrate mounting means 118. For this reason, as a cooling device for preventing overheating of the gas distribution device 114, a refrigerant circulation device for circulating the refrigerant is provided inside the third gas distribution plate 138. Then, in preparation for the occurrence of an abnormality in the refrigerant circulation device, the first thermocouple 144 is disposed on the third gas distribution plate 138, the temperature of the gas distribution plate 114 is measured, and the temperature is overheated to the heat resistant temperature or more. In some cases, heating of the process chamber 112 is stopped. Note that a second thermocouple (not shown) may be disposed on the second gas distribution plate 136. The respective temperatures of the third gas distribution plate 138 and the second gas distribution plate 136 are measured by the first and second thermocouples, and the temperatures of the second and third gas distribution plates 136 and 138 are compared. Adjust the refrigerant temperature. When the temperature difference between the second and third gas distribution plates 136 and 138 increases, due to the difference in thermal expansion, the plurality of second passage holes 136d and the plurality of first nozzles 138b communicated with each other, and The plurality of third passage holes 136e and the plurality of second nozzles 138c may be misaligned. For this reason, by adjusting the temperature of the refrigerant so that a temperature difference does not occur between the second and third gas distribution plates 136, 138, the plurality of second passage holes 136d caused by thermal expansion and the plurality of second passage holes 136d, It is possible to prevent the first nozzle 138b and the plurality of third passage holes 136e and the plurality of second nozzles 138c from being misaligned.

  On the other hand, as shown in FIGS. 2 and 3, the first gas distribution plate 134 of the gas distribution device 114 is fixed to the chamber lid 130, and the first gas distribution plate 134 is interposed between the chamber lid 130 and the first gas distribution plate 134. A first space 160 for accommodating a first process gas introduced through the gas introduction pipe 134a is formed. A recess 148 is formed in the chamber lid 130 corresponding to the first gas distribution plate 134, and a baffle 134 c is disposed between the recess 148 and the first space 160 formed by the first housing 134 b. Is done. The baffle 134c includes a plate 149 and a plurality of supply holes 150 formed by perforating the plate 149, and functions to uniformly supply the first process gas in the recess 148 to the first space 160. In order to uniformly supply the first process gas in the recess 148 to the first space 160 as much as possible, any one of the plurality of supply holes 150 may coincide with the first gas introduction pipe 134a. Don't be. In other words, the first process gas supplied through the first gas introduction pipe 134 a is reflected by the baffle 134 c and accommodated in the recess 148, and then enters the first space 160 through the plurality of supply holes 150. To be supplied.

  The first gas distribution plate 134 is manufactured using aluminum that is easy to process. A plurality of holes for excavating the interior using bulk aluminum to form a first space 160 for containing the first process gas and drilling a bottom surface of the first space 160 to allow the first process gas to pass therethrough. A first passage hole 134d is formed. The first gas distribution plate 134 may be formed by bonding the aluminum of the plate materials to each other by a method such as welding without using bulk aluminum and drilling the lower portion. The side wall of the first housing 134b is processed so that at least the second gas distribution plate 136 has a thickness that can cover the buffer space 136c provided in the second housing 136b. The reason why the side wall of the first housing 134b is thick enough to cover the buffer space 136c is that the second gas introduction pipe 136a connected to the buffer space 136c is provided on the side wall of the chamber lid 130 and the first housing 134b. It is because it is drawn through. For this reason, it is preferable to process the thickness of the side wall of the first housing 134b so as to be the same as the combined thickness of the side wall of the second housing 136b and the buffer space 136c.

  After aligning the plurality of first passage holes 134d of the first gas distribution plate 134 and the plurality of second passage holes 136d of the second gas distribution plate 136 to communicate with each other, the second gas distribution plate 136 is coupled to the first gas distribution plate 134. The second gas distribution plate 136 is made of aluminum that is easy to process. A plurality of second passage holes 136d penetrating vertically are formed in the bulk aluminum, and a buffer space 136c and a second process gas are accommodated by excavating between both sides of the bulk aluminum and the plurality of second passage holes 136d. A second space 162 is formed. Then, a plurality of third passage holes 136e are formed by drilling between the plurality of second passage holes 136d.

  As shown in FIG. 3 and FIG. 5, a plurality of pillars 166 in which the second passage holes 136 d are built are formed by excavating bulk aluminum so that the bottom surface maintains a constant thickness. Lower portions of the plurality of pillars 166 constitute a bottom surface of the second housing 136b in which a plurality of third passage holes 136e are formed. The plurality of pillars 166 are formed in an isolated pattern, and a plurality of pillars 166 are excavated to form a second space 162 that communicates with each other. Each of the plurality of pillars 166 may be formed in a cylindrical shape having the same shape as the second passage hole 136d. However, in consideration of ease of processing, it is formed in a rectangular shape as shown in FIG. Also good. When each of the plurality of pillars 166 is formed in a rectangular shape, the peripheral edge portion can be subjected to curved surface processing so that the second process gas smoothly flows. A side wall of the second housing 136b in which the second space 162 is formed by excavation of bulk aluminum and a partition wall 140 that partitions the buffer space 136c are formed. The partition 140 is processed to form a supply hole 142 for supplying the second process gas to the top of the partition. 3 and 5 show that one second passage hole 136d is built in one pillar 166, but two or more second pillars 166 may be included in one pillar 166 as necessary. The passage hole 136d may be built in. However, when two or more second passage holes 136d are built in one pillar 166, a relatively small number of third passage holes 136e are provided rather than the second passage holes 136d, so that the plurality of first and second passage holes 136d are provided. This is suitable when the second process gas passing through the second passage holes 134d and 136d is supplied at a higher flow rate than the first process gas. Therefore, in consideration of the supply ratio of the first and second process gases, the number of second passage holes 136d built in one pillar 166 is adjusted and designed.

  The second gas distribution plate 136 is aligned so that the plurality of first passage holes 134d of the first gas distribution plate 134 and the plurality of second passage holes 136d of the second gas distribution plate 136 communicate with each other. Is coupled to the first gas distribution plate 134, the lower portion of the first housing 134b of the first gas distribution plate 134 and the upper portions of the plurality of pillars 166 are in surface contact. For this reason, the first process gas passes through the plurality of first passage holes 134d of the first gas distribution plate 134 to the plurality of second passage holes 136d of the second gas distribution plate 136 while maintaining hermeticity. Communicated. Here, the distance between the second passage holes 136d adjacent to one third passage hole 136e is the same. In other words, the third passage hole 136e is located at the center of the four second passage holes 136d. When the second gas distribution plate 136 is coupled to the first gas distribution plate 134, the second gas introduction pipe 136 a is drawn into the buffer space 136 c through the chamber lid 130 and the first gas distribution plate 134. By processing the buffer space 136c and the second space 162, a partition 140 is formed between the buffer space 136c and the second space 162, and the second process gas accommodated in the buffer space 136c passes through the supply holes 142. And supplied to the second space 162.

  The plurality of second and third passage holes 136d, 136e of the second gas distribution plate 136 communicate with the plurality of first and second nozzles 138b, 138c of the third gas distribution plate 138, respectively. The third gas distribution plate 138 is connected to the second gas distribution plate 136. The third gas distribution plate 138 is made of stainless steel or aluminum having strong heat resistance and corrosion resistance. The third gas distribution plate 138 is manufactured by the following process. First, as shown in FIG. 4A, first and second plate members 170, 172 using a stainless steel material are prepared, and a plurality of first and second nozzles 138b, 138c corresponding to the plurality of first and second nozzles 138b, 138c are prepared. The second openings 174, 176 are drilled. Next, as shown in FIG. 4B, after preparing a plurality of pin-type tubes 178 for use as a plurality of first and second nozzles 138b and 138c for injecting the first and second process gases. The plurality of tubes 178 are fitted into the plurality of first and second openings 174 and 176 and arranged. Next, a paste 180 containing a filler material is applied on the first and second plate members 170, 172 in which a plurality of tubes 178 are arranged, and brazed to form a plurality of tubes 178 as shown in FIG. 4C. Are coupled to the first and second plate members 170, 172 to form a plurality of first and second nozzles 138b, 138c capable of injecting the first and second process gases. Next, after a plurality of tubes 178 located outside the third space 164 and protruding from the first and plate members 170 are cut off, a side plate made of stainless steel is formed on the side surface between the first and second plate members 170 and 172. The third housing 138a having the third space 164 in which the refrigerant flows is formed by arranging 182 and joining them using a method such as welding. A refrigerant flow tube 152 that passes through the chamber lid 130 and is drawn into the side surface of the gas distribution device 114 is connected to the side surface of the third housing 138a. The gas distribution device 114 is cooled by the flow of the third refrigerant.

  As shown in FIG. 4B, the plurality of tubes 178 fitted in the plurality of first and second openings 174 and 176 protrudes outside the first and second plate members 170 and 172, and includes paste. Is applied on top of the first plate members 170, 172. In other words, the paste applied to the upper portion of the first plate member 170 is located outside the third space 164, and the paste applied to the upper portion of the second plate member 172 is located inside the third space 164. . Then, as shown in FIG. 4C, the plurality of tubes 178 that are located outside the third space 164 and protrude from the first and second plate members 170 and 172 are cut out, and the first and second plate members 170 and 172 are cut off. And the plurality of tubes 178 are flush with each other. Although not shown in FIGS. 4A to 4C, a temperature measuring means, for example, a thermocouple is provided on the first or second plate member 170, 172, and the temperature measured in the brazing process is set to an appropriate temperature. If it exceeds, work can be interrupted. The plurality of pin-type tubes use the same material as the first and second plate members 170 and 172, but other materials can be used as necessary. Brazing is a method in which two base materials to be bonded at a temperature of 450 ° C. or higher are bonded by adding a filler material at a melting point or lower, including a base material to be bonded and a filler material. The brazing temperature varies depending on the type of paste.

  Each of the plurality of second passage holes 136d and the plurality of third passage holes 136e of the second gas distribution plate 136 communicates with the plurality of first and second nozzles 138b and 138c of the third gas distribution plate 138. When the third gas distribution plate 138 is coupled to the second gas distribution plate 136, the lower portion of the second housing 136b of the second gas distribution plate 136 and the third gas distribution plate 138 are aligned. The upper portion of the third housing 138a is in surface contact. Therefore, the substrate mounting means 118 is provided via the plurality of second and third passage holes 136d and 136e and the plurality of first and second nozzles 138b and 138c while the first and second gases are kept airtight. Is injected into.

On the other hand, FIGS. 2 and 3 show a shape in which the gas distribution device 114 is coupled to the chamber lid 130, but the gas distribution device 114 may be disposed away from the chamber lid 130. When the chamber lid 130 and the gas distribution device 114 are disposed apart from each other, a rear plate connected to the first gas introduction pipe 134 a is separately provided on the upper portion of the first gas distribution plate 134. Here, the first process gas is, for example, trimethylgallium (TMGa), biscyclopentazinylmagnesium (Cp ₂ Mg), trimethylaluminum (TMAl), and trimethylindium (TMIn) that can be used to form a light emitting element. And the second process gas includes nitrogen gas such as nitrogen (N ₂ ) and ammonia (NH ₃ ), silicon gas such as SiH ₄ and SiH _6, and substances such as hydrogen (H ₂ ). Can be included. For example, when GaN is formed on the substrate 116, TMG can be used as the first process gas and NH ₃ can be used as the second process gas.

  FIG. 6 is an exploded perspective view of a gas distribution device according to a second embodiment of the present invention, and FIGS. 7A to 7C are manufacturing perspective views of a third gas distribution plate according to the second embodiment of the present invention. is there. In the second embodiment of the present invention, it is possible to simplify the components and contribute to the cost saving while having the same function as the gas distribution device of the first embodiment. In the second embodiment of the present invention, the same components as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 6, the gas distribution device 114 is supplied with the first process gas and accommodates it, and is supplied with the first gas distribution plate 134 that allows the first process gas to pass therethrough and the second process gas. A second gas distribution plate 136 through which the first and second process gases pass, and a third gas distribution plate 138 that injects the first and second process gases toward the substrate mounting means 118. And comprising.

  The first gas distribution plate 134 has a first gas introduction pipe 134 a that introduces the first process gas through the center of the chamber lid 130, and a first space 160 that accommodates the first process gas. A first housing 134b, a baffle 134c as a distribution means for uniformly distributing the first process gas supplied from the first gas introduction pipe 134a inside the first housing 134b, and the first A plurality of first passage holes 134d are provided on the bottom surface of the housing 134b and allow the first process gas to pass therethrough. The first housing 134b is positioned below the first side wall 190a and the first side wall 190a surrounding the first space 160, and the first lower plate 190b in which a plurality of first passage holes 134d are formed. Is provided.

  The second gas distribution plate 136 has a second gas introduction pipe 136a that introduces the second process gas through the chamber lid 130, and a second space 162 that contains the second process gas. The side walls of the housing 136b and the second housing 136b are partitioned by the partition wall 140 and connected to the second gas introduction pipe 136a before the second process gas is supplied to the second space 162. A buffer space 136c that accommodates the process gas, a plurality of second passage holes 136d that communicate with the plurality of first passage holes 134d and allow the first process gas to pass therethrough, and a bottom surface of the second housing 136b. And a plurality of third passage holes 136e for allowing the second process gas to pass therethrough. The second housing 136b is located below the second side wall 192a and the second side wall 192a surrounding the periphery of the second space 162, and has a plurality of first through holes 134d and a plurality of third passage holes. And a second lower plate 192b on which 136e is formed. The buffer space 136c is disposed in a side space of the second housing 136b, and a supply port 142 is disposed in the partition wall 140 in order to uniformly supply the second process gas to the second space 162. The partition 140 is formed along the side wall 190a of the second housing 136b with a predetermined distance from the side wall 190a. A buffer space 136c is formed between the partition wall 140 and the side wall 190a of the second housing 136b, and the buffer space 136c accommodates the second process gas supplied from the second gas introduction pipe. The buffer space 136 c has a circular or polygonal ring shape depending on the shape of the gas distribution device 114. However, when a plurality of second gas introduction pipes 136a are arranged and each second gas introduction pipe 136a is connected to the side wall 190a of the second housing 136b, a plurality of buffer spaces 136c that are shielded from each other. May be formed. Further, the plurality of buffer spaces 136c may be communicated with each other. In other words, when the second gas distribution plate 136 is rectangular, one second gas introduction pipe 136a and a buffer space 136c may be provided on each side. The supply port 142 disposed in the partition wall 140 may be continuously formed, and may be formed from a plurality of openings formed in a slit shape having the same height or intermittently extending to form an isolated pattern.

  The third gas distribution plate 138 is formed inside the third housing 138a having the third space 164 in which the refrigerant flows and the third housing 138a, and communicates with each of the plurality of second passage holes 136d. The plurality of first nozzles 138b for injecting the first process gas and the plurality of second nozzles 138c for injecting the second process gas and the third nozzles 138b in communication with the plurality of third passage holes 136e. A refrigerant flow pipe (not shown) that is connected to the housing 138a and circulates the refrigerant is provided. The third housing 138a is positioned below the third side wall 194a and the third side wall 194a that surround the third space 164, and is provided with a plurality of first and second nozzles 138b and 138c. The lower plate 194b is provided. The refrigerant flow pipe includes a refrigerant supply pipe that supplies the refrigerant to the third space 164 and a refrigerant discharge pipe that discharges the refrigerant in the third space 164. The refrigerant flow pipe 152 passes through the chamber lid 130 and is drawn into the process chamber 112 to be connected to the third side wall 194a of the third housing 138a. The refrigerant circulates in a refrigerant circulation device (not shown).

  The third gas distribution plate 138 can be manufactured by the following process. That is, as shown in FIG. 7A, a plate member 220 made of stainless steel or aluminum is prepared, and a plurality of first and second openings 174 and 176 corresponding to the plurality of first and second nozzles 138b and 138c are provided. Perforate. Next, as shown in FIG. 7B, after preparing a plurality of pin-type tubes 178 for use as a plurality of first and second nozzles 138b, 138c for injecting the first and second process gases. The plurality of tubes 178 are fitted into the plurality of first and second openings 174 and 176 and arranged, and the paste 180 containing the filler material is applied onto the plate member 220 on which the plurality of tubes 178 are arranged. Next, as shown in FIG. 7C, a plurality of first and second nozzles 138b and 138c capable of injecting the first and second process gases by brazing and coupling the plurality of tubes 178 to the plate material 220 are provided. Form. Then, a side surface plate 182 made of stainless steel or aluminum is arranged so as to surround the side surface of the third space 164 and be connected to the peripheral portion of the plate member 220, and the refrigerant flows by being bonded using a method such as welding. A third housing 138a having a third space 164 is formed. A refrigerant flow pipe 152 that passes through the chamber lid 130 and is drawn into the side surface of the gas distribution device 114 is connected to the side surface of the third housing 138a. The gas distribution device 114 is cooled by the flow of the third refrigerant.

  In the second embodiment of the present invention, the third housing 138a of the third gas distribution plate 138 includes a third side wall 194a and a third lower plate 194b without having an upper plate, and includes a plurality of A plurality of tube-shaped first and second nozzles 138b and 138c communicating with the second passage hole 136d and the third passage hole 136e are the second ones of the second housing 136b constituting the second gas distribution plate 136. 2 directly contacts the lower plate 192b. Since the plurality of first and second nozzles 138b and 138c have a tube shape having a predetermined thickness, the upper portions of the plurality of first and second nozzles 138b and 138c face the lower portion of the second lower plate 192b. Contact. Therefore, in the second embodiment, the third gas distribution plate 138 is formed by a simple process as compared with the first embodiment.

  FIG. 8 is an exploded perspective view of the gas distribution apparatus according to the third embodiment of the present invention, and FIG. 9 is a plan view of the substrate mounting means according to the third embodiment of the present invention. The third embodiment of the present invention is produced by dividing the first to third gas distribution plates when the gas distribution device is enlarged as compared with the first and second embodiments. It is characterized by that. In the third embodiment of the present invention, the same components as those in the first and second embodiments are denoted by the same reference numerals.

  As shown in FIG. 8, the gas distribution device 114 is supplied with and contains the first process gas, and is supplied with the first gas distribution plate 134 through which the first process gas passes and the second process gas. And a second gas distribution plate 136 that allows the first and second process gases to pass therethrough, and the first and second process gases to be injected toward the substrate mounting table (not shown) of the process chamber. 3 gas distribution plates 138 are provided.

  The first gas distribution plate 134 has a first gas introduction pipe 134 a that introduces the first process gas through the chamber lid 130, and a first space 160 that contains the first process gas. Housing 134b, a baffle 134c as a distribution means for uniformly distributing the first process gas supplied from the first gas introduction pipe 134a inside the first housing 134b, and the first housing 134b A plurality of first sub-gas distribution plates 200 are provided on the bottom surface and have a plurality of first passage holes 134d for allowing the first process gas to pass therethrough.

  The first sub gas distribution plate 200 has a different shape depending on the shape of the process chamber. In the third embodiment of the present invention, a cylindrical process chamber is used, and the first sub-gas distribution plate 200 is formed in a fan shape so as to be suitable for processing a plurality of circular wafers stacked on a substrate. The end portion of the first sub gas distribution plate 200 adjacent to the central portion of the first gas distribution plate 134 has an arc shape. When the first gas distribution plate 134 is assembled by combining the plurality of first sub-gas distribution plates 200, a circular shape having a cavity at the center is obtained.

  When a wafer is used as a substrate and a plurality of substrates 116 are stacked on the substrate mounting means 118, as shown in FIG. 9, the substrate mounting means 118 includes a plurality of susceptors 210 on which the substrate 116 is mounted, and a plurality of susceptors 210. And a disk 212 on which the susceptor 210 is disposed. When the first gas distribution plate 134 is circular, the plurality of first sub-gas distribution plates 200 are partitioned by a plurality of straight lines passing through the center of the first gas distribution plate 134, and the plurality of first sub-gas distribution plates 200. Have the same size. When the first gas distribution plate 134 includes six first sub-gas distribution plates 200, the angle of each first sub-gas distribution plate 200 adjacent to the center of the first gas distribution plate 134 is 60. °. When the first gas distribution plate 134 is rectangular, the first sub gas distribution plate 200 is divided into a plurality of rectangles having a uniform size.

  The first housing 134b is positioned below the first side wall 190a and the first side wall 190a that surround the first space 160, and the first lower plate 190b in which a plurality of first passage holes 134d are disposed. Is provided. As shown in FIG. 9, the plurality of susceptors 210 are not disposed at the center of the disk 212. For this reason, since the substrate 116 is not placed in the central portion of the disk 212, even if the central portion of the first gas distribution plate 134 is the cavity 202, the process of processing the substrate 116 is not affected. In addition, since the end of the first sub gas distribution plate 200 is formed in an arc shape in order to form a cavity in the center of the first gas distribution plate 134, the first sub gas distribution plate 200 can be easily manufactured and assembled. is there. When the end of the first sub gas distribution plate 200 is extended to the center of the process chamber, a plurality of first passage holes 134d are uniformly formed in the first lower plate 190b of the first housing 134b corresponding to the end. It becomes difficult to form.

  In order to supply the first process gas to the first space 160 of the plurality of first sub gas distribution plates 200, the first gas introduction pipe 134 a is branched to the plurality of first sub gas introduction pipes 204. One or two or more first sub-gas introduction pipes 204 are uniformly connected to the first sub-gas distribution plate 200. The first sub-gas introduction pipe 204 is embedded in the chamber lid 130 to supply the first process gas from the center of the first sub-gas distribution plate 200, or the first gas introduction pipe 134a outside the process chamber. To the first sub gas introduction pipe 204, and the first sub gas introduction pipe 204 passes through the chamber lid 130 and supplies the first process gas to the first space 160 of the first sub gas distribution plate 200. Can do.

  In the third embodiment of the present invention, unlike the first and second embodiments, the recessed portion 148 may not be formed in the chamber lid 130. When a stepped portion 230 is provided along the inner peripheral edge of the side wall 190a of the first housing 134b and the baffle 134c is positioned on the stepped portion 230, the first sub-gas introduction pipe is located above the baffle 134c inside the first housing 134b. An accommodation space 232 for accommodating the first process gas supplied from 204 is formed. The baffle 134 c functions to uniformly supply the first process gas in the accommodation space 232 to the first space 160.

  The second gas distribution plate 136 has a second gas introduction pipe (see 136a in FIG. 1) through which the second process gas is introduced through the chamber lid 130, and a second gas containing the second process gas. A second housing 136b having a space 162 and a side space of the second housing 136b are partitioned by a partition wall 140 and connected to the second gas introduction pipe 136a to supply the second process gas to the second space 162. A buffer space 136c for storing a second process gas before the first process gas, a plurality of second pass holes 136d that communicate with the first pass holes 134d and allow the first process gas to pass therethrough, and a second housing A plurality of second sub-gas distribution plates 206 are provided on the bottom surface of 136b and have a plurality of third passage holes 136e through which the second process gas passes.

  The second sub gas distribution plate 206 is made in the same shape as the first sub gas distribution plate 200. Therefore, like the first sub-gas distribution plate 200, the second sub-gas distribution plate 206 is formed in a fan shape, and the end of the second sub-gas distribution plate 206 adjacent to the center of the second gas distribution plate 136 is formed. Has an arc shape. When the plurality of second sub gas distribution plates 200 are assembled to assemble the second gas distribution plate 136, the second gas distribution plate 136 has a circular shape having a cavity in the center. The second housing 136b is located below the second side wall 192a and the second side wall 192a surrounding the periphery of the second space 162, and has a plurality of first through holes 134d and a plurality of third passage holes. A second bottom surface 192b is formed on which 136e is formed. The buffer space 136c is provided in the side space of the second housing 136b, and a supply port 142 is provided in the partition wall 140 in order to uniformly supply the second process gas to the second space 162. The partition wall 140 is formed inside the side wall at a predetermined distance from the side wall along the side wall of the second housing 136b. A buffer space 136c is formed between the partition wall 140 and the side wall of the second housing 136b, and the buffer space 136c accommodates the second process gas supplied from the second gas introduction pipe. The supply port 142 disposed in the partition wall 140 may be continuously formed, and may be formed from a plurality of openings formed in a slit shape having the same height or intermittently extending to form an isolated pattern.

  The third gas distribution plate 138 is formed inside the third housing 138a having the third space 164 in which the refrigerant flows and the third housing 138a, and communicates with each of the plurality of second passage holes 136d. The plurality of first nozzles 138b for injecting the first process gas and the plurality of second nozzles 138c for injecting the second process gas and the third nozzles 138b in communication with the plurality of third passage holes 136e. A plurality of third sub-gas distribution plates 208 are connected to the housing 138a and have a refrigerant flow pipe for circulating the refrigerant. The refrigerant flow pipe includes a refrigerant supply pipe that supplies a refrigerant to the third space 164 and a refrigerant discharge pipe that discharges the refrigerant in the third space 164. The refrigerant flow pipe passes through the chamber lid 130 and is drawn into the process chamber to be connected to the side surface of the third housing 138a. The refrigerant circulates in a refrigerant circulation device (not shown). The third sub gas distribution plate 208 is formed in the same shape as the first and second sub gas distribution plates 200 and 206. Therefore, like the first and second sub-gas distribution plates 200 and 206, the third sub-gas distribution plate 208 is formed in a fan shape and is adjacent to the center of the third gas distribution plate 138. The end of the plate 208 has an arc shape. Then, when the third gas distribution plate 138 is formed by assembling the plurality of third sub gas distribution plates 208, the third gas distribution plate 138 has a circular shape having a cavity at the center. The third housing 138b is located below the third side wall 194a and the third side wall 194a surrounding the periphery of the third space 164, and a plurality of first and second nozzles 138b and 138c are disposed. Third lower plate 194b.

  In the third embodiment of the present invention, the third housing 138a of the third sub-gas distribution plate 138 includes a third side wall 194a and a third lower plate 194b, and includes a plurality of second passage holes 136d and A plurality of tube-shaped first and second nozzles 138b, 138c communicating with the third passage hole 136e directly with the second lower plate 192b of the second housing 136b constituting the second gas distribution plate 136. Touch. If necessary, the third housing 138a may include an upper plate through which the plurality of first and second nozzles 138b and 138c communicate. Since the plurality of first and second nozzles 138b and 138c have a tube shape having a predetermined thickness, the upper portions of the plurality of first and second nozzles 138b and 138c face the lower portion of the second lower plate 192b. Contact. For this reason, in the second embodiment, the third gas distribution plate 138 is formed by a simple process as compared with the first embodiment.

  Meanwhile, the gas distribution device 114 according to another embodiment of the present invention injects at least a part of the plurality of process gases from the region directly above the substrate 116 and has a high decomposition temperature among the plurality of process gases. The process gas can be supplied to a space between the plurality of substrates 116 (for example, an upper region in the central portion of the substrate mounting means 118). In this case, a plurality of substrates 116 may be placed on the substrate placing means 118, and may be arranged radially with reference to the center of the substrate placing means 118. Thereby, the process gas decomposition efficiency can be increased by supplying the process gas having a high decomposition temperature to the highest temperature region in the chamber lid region. Thus, a gas distribution device 114 and a substrate processing apparatus including the same according to another embodiment of the present invention will be described as follows. In the description of other embodiments of the present invention, descriptions of contents overlapping with those described in the embodiments of the present invention will be omitted.

  10 is a cross-sectional view of a substrate processing apparatus according to a fourth embodiment of the present invention, FIG. 11 is a plan view of the substrate processing apparatus according to the fourth embodiment, and FIG. 12 is a fourth embodiment. It is sectional drawing for demonstrating the gas distribution apparatus by.

  10 to 12, a substrate processing apparatus according to a fourth embodiment of the present invention includes a process chamber 112 that provides a reaction space, and a substrate that is placed in the reaction space of the process chamber 112 and on which a substrate 116 is placed. The mounting means 118 and a gas distribution device 114 for supplying different process gases to the reaction space of the process chamber 112 are provided. In addition, the gas distribution device 114 includes first and second gas distribution units 310 and 320. Here, a plurality of first gas distribution units 310 are arranged, and each of the first gas distribution units 310 is formed by stacking first, second and third gas distribution plates 134, 136 and 138.

  In the gas distribution device 114 of the substrate processing apparatus according to the fourth embodiment of the present invention, the first gas distribution unit 310 supplies at least a part of the plurality of process gases from a region directly above the substrate 116, The second gas distribution unit 320 supplies a process gas having a high decomposition temperature among the plurality of process gases to a space between the plurality of substrates 116 (for example, an upper region in the central portion of the substrate mounting unit 118). Thereby, by injecting the process gas having a high decomposition temperature into the highest temperature region in the chamber lid 130 region, the decomposition efficiency of the process gas can be increased. That is, the gas distribution device 114 is disposed on the bottom surface on the lower side of the chamber lid 130, and a process gas having a high decomposition temperature is supplied to a region where the temperature is high among regions where the gas distribution device 114 is disposed. Thereby, thin film vapor deposition efficiency can be increased and the process gas discarded by unreacted can be reduced. Of course, an average of the decomposition temperatures of the plurality of process gases can be calculated, and a process substance having a decomposition temperature larger than the average value can be supplied to the space between the plurality of substrates 116. Here, a process gas having a decomposition temperature larger than the average value is referred to as a process gas having a high decomposition temperature. The gas distributor 114 cools and supplies the process gas having a low decomposition temperature among the process gases. Thereby, it is possible to prevent the process gas having a low decomposition temperature from being decomposed and reacted in the first gas distribution unit 310. Of course, the gas distribution device 114 includes a process gas storage unit 400 that supplies process gas to the gas distribution device 114. The gas distribution device 114 further includes a refrigerant reservoir 500 that supplies a refrigerant for cooling the process gas.

Hereinafter, an apparatus for depositing a binary compound on a substrate using two kinds of process gases will be mainly described. That is, the first and second process gas reservoirs 410 and 420 are provided, and the first and second process gases in the first and second process gas reservoirs 410 and 420 are respectively injected onto the substrate 116. To do. Of course, the first and second process gas storage units 410 and 420 may store a gas state substance or a liquid state substance, but are referred to as a process gas storage unit 400 for convenience. Further, this embodiment is not limited to this, and a larger number of process gases can be used. Here, the first process gas may include substances such as TMGa, Cp ₂ Mg, TMAl, and TMIn, and the second process gas may be nitrogen gas such as nitrogen (N ₂ ) and ammonia (NH ₃ ), SiH ₄ and silicon gas such as SiH ₆ and materials such as hydrogen (H ₂ ).

  The first gas distributor 310 is supplied with the first and second process gases via the first and second gas supply pipes 412 and 422, and the substrate is separated through a space (or route) separated from the first and second process gases. 116. The first gas distributor 310 supplies the first and second process gases after cooling them. The first gas distribution unit 310 is supplied with the first process gas of the first gas storage unit 410 via the first gas supply pipe 412 and supplies the first gas to the first gas distribution plate 134. A second gas distribution plate 136 that supplies the second process gas in the second gas storage section 420 via the second process gas supply pipe 412 and supplies the second process gas, and a third gas that cools the supplied process gas. Gas distribution plate 138. Here, the first, second and third gas distribution plates 134, 136 and 138 are stacked one above the other. At this time, as shown in FIG. 10, the third gas distribution plate 138 is positioned between the first and second gas distribution plates 134, 136 and the substrate mounting means 118 to heat the substrate mounting means 118. Accordingly, it is possible to prevent the process gas in the first and second gas distribution plates 134 and 136 from being decomposed. As described above, the gas distribution plate can be variously changed according to the number of process gases.

  The first gas distribution plate 134 includes a first gas introduction pipe 134a that introduces a first process gas through the chamber lid 130, and a first space 160 that receives and accommodates the first process gas. A first housing 134b having a plurality of first passage holes 134d extending from the first housing 134b and allowing the first process gas to pass therethrough. Further, a baffle (not shown) may be further provided for uniformly distributing the first process gas inside the first housing 134b. The second gas distribution plate 136 has a second gas introduction pipe 136a that introduces the second process gas through the chamber lid 130, and a second space 162 that contains the second process gas. Housing 136b, a plurality of second passage holes 136d communicating with the plurality of first passage holes 134d to allow the passage of the first process gas, and the bottom surface of the second housing 136b. A plurality of third passage holes 136e through which the process gas passes. The third gas distribution plate 138 is formed inside the third housing 138a having the third space 164 in which the refrigerant flows and the third housing 138a, and communicates with each of the plurality of second passage holes 136d. A plurality of first nozzles 138b for injecting the first process gas, and a plurality of second nozzles 138c in communication with the plurality of third passage holes 136e and for injecting the second process gas. . Further, the third gas distribution plate 138 further includes a refrigerant flow pipe 152 that is connected to the third housing 138a and circulates the refrigerant. The refrigerant flow pipe 152 includes a refrigerant supply pipe 152 a that supplies the refrigerant to the third space 164, and a refrigerant discharge pipe 152 b that discharges the refrigerant in the third space 164. These first to third gas distribution plates 134, 136, and 138 may have the same configuration as the gas distribution plates described with reference to FIGS.

  As described above, the first process gas supplied to the first space 160 of the first gas distribution plate 134 passes through the second space 162 of the second gas distribution plate 136. 136d and the first nozzle 138d of the third gas distribution plate 138 are supplied to the internal space (that is, the reaction space) of the process chamber 112. The second process gas supplied to the second space 162 of the second gas distribution plate 136 is processed through the third passage hole 136e and the second nozzle 138c of the third gas distribution plate 318. It is supplied to the internal space of the chamber 112.

  As described above, the temperature of the first process gas and the second process gas may be lower than the temperature of the substrate mounting means 118 due to the refrigerant. Accordingly, it is possible to prevent the first and second process gases from being decomposed by heat before being injected into the reaction space of the process chamber 112. In particular, when depositing a binary or more compound thin film, it is necessary to use two or more process gases having different decomposition temperature characteristics. Therefore, if the third gas distribution plate 138 in which the refrigerant is circulated is not used, the process gas having a low decomposition temperature among the two or more process gases is first or second due to the heat of the substrate mounting means 118. The inside of the two gas distribution plates 134 and 136 (that is, the internal spaces 160 and 162) is decomposed by heat. As a result, the deposition efficiency of the thin film is drastically reduced, which causes the generation of particles.

  Therefore, in this embodiment, the third gas distribution plate 138 in which the refrigerant circulates is provided, and the first and second spaces 160, 162 of the first or second gas distribution plates 134, 136 are used as well as the first and second spaces 160, 162. It is possible to prevent the process gas from being decomposed by heat by cooling the second nozzles 138b and 138c. However, in this case, the process gas having a relatively high decomposition temperature among the two or more process gases may be cooled, thereby causing a disadvantage that the decomposition efficiency is lowered. Of course, in the case of a process gas having a high decomposition temperature, it is heated in the reaction space after being supplied into the reaction space of the process chamber 112. However, there is a drawback that such heating does not have sufficient decomposition efficiency. For this reason, in order to solve this, it is necessary to increase the supply amount of the process gas having a high decomposition temperature. As described above, the process gas having a high decomposition temperature is reduced in decomposition efficiency due to cooling, so that the amount of use is increased. As a result, there has been a problem that the amount of process gas discarded without being subjected to the reaction is increased and the process cost is increased.

  In this embodiment, as described above, a process gas having a high decomposition temperature out of two or more kinds of process gases is separately injected into the central region of the substrate mounting unit 118 via the second gas distribution unit 320. Such problems can be solved. That is, in this embodiment, the plate-like first gas distribution unit 310 corresponding to the substrate mounting means 118 is replaced with a plurality of first gas distribution units 310 corresponding to the substrate 116 as shown in FIG. It is separated. As a result, the first gas distributor 310 in the upper part of the central region of the substrate platform 118 is removed. That is, the upper part (that is, the chamber lid 130 region) of the central region of the substrate mounting means 118 is opened. Next, a second gas distribution unit 320 for injecting a process gas having a high decomposition temperature of two or more kinds of process gases is attached to the upper region of the central portion of the substrate mounting means 118, that is, the central region of the chamber lid. Yes. The second gas distribution unit 320 includes a central injection nozzle 321 disposed at the position of the chamber lid 130 corresponding to the central region of the substrate platform 118. The central injection nozzle 321 is communicated with the second process gas reservoir 420 having a high decomposition temperature. As a result, the central injection nozzle 321 can provide the second process gas having a high decomposition temperature in the upper region of the central portion of the substrate mounting means 118. At this time, the second process gas provided to the center region of the substrate platform 118 is jetted from the vicinity of the chamber lid 130 toward the substrate platform 118. And it moves toward the board | substrate 116 radially arrange | positioned around the center area | region of the board | substrate mounting means 118. FIG. For this reason, the movement distance becomes longer than the 2nd process gas injected from the 1st gas distribution part 310. FIG. That is, the second process gas sprayed to the central region of the substrate platform 118 moves to the peripheral region of the substrate platform 118 and is exhausted. This is because air is exhausted through the lower region of the periphery of the substrate mounting means 118. Here, since the moving distance (that is, the flow path) of the process gas becomes long, the second process gas ejected from the second gas distribution unit 320 is provided with the heat of the substrate placing unit 118 for a longer time. Can. As a result, the second process gas is preheated by the temperature inside the chamber, and the decomposition efficiency can be increased. Furthermore, since a separate cooling member is not positioned between the second gas distribution unit 320 and the substrate mounting unit 118, the problem that the injected second process gas is cooled can be solved.

  As described above, in this embodiment, the decomposition efficiency is increased by further supplying the second gas distributor 320 with a process gas having a high decomposition temperature among the two or more kinds of process gases. Thereby, the supply amount of the process gas having a high decomposition temperature can be reduced by 10% or more compared to the conventional case. In this embodiment, the second process gas in the second gas storage unit 420 is supplied to the second gas introduction pipe 136 a of the second gas distribution plate 136 and the central injection nozzle 321 of the second gas distribution unit 320. Provided. At this time, a flow rate controller such as MFC is disposed in each of the second gas introduction pipe 136a and the central injection nozzle 321, and the supply flow rate (that is, the supply amount) becomes variable. Of course, a flow rate controller may also be disposed between the first gas introduction pipe 136a of the first gas distribution plate 134 and the first gas reservoir 410.

  The substrate processing apparatus according to this embodiment is not limited to the above description, and can be variously modified. Hereinafter, these modifications will be described. The description of the modified example described later can be applied to the description of different modified examples.

  First, as shown in FIG. 13, the first gas distribution unit 310 may be formed in a single body so as to cover the entire substrate 116 on the substrate mounting means 118. Thereby, the first gas distribution unit 310 is formed in a ring shape. And the 2nd gas distribution part 320 is located in the center area | region of a ring. Thus, by producing the ring-shaped first gas distribution part 310, the substrate mounting means 118 can be rotated. That is, it is possible to continue supplying the process gas onto the substrate 116 even if the substrate mounting means 118 rotates. This is because the first gas distribution unit 310 is formed in a ring shape corresponding to the rotation radius due to the rotation of the substrate mounting means 118. For this reason, the uniformity of the thin film vapor-deposited on the board | substrate 116 through rotation of the board | substrate mounting means 118 can be improved. At this time, as shown in FIG. 13, the ring-shaped first gas distribution unit 310 may be manufactured to include a plurality of blocks. When a plurality of large-area substrates are placed, the diameter of the ring-shaped first gas distribution unit 310 may be increased. For this reason, there exists a fault that it becomes difficult to produce a gas distribution apparatus using a single processing process. Therefore, as shown in FIG. 13, a ring-shaped first gas distribution section 310 can be manufactured by combining generally fan-shaped portions (four blocks in FIG. 13). Here, each block to be combined can also operate independently. And as shown in FIG. 13, the process gas supplied to the ring-shaped 1st gas distribution part 310 and the 2nd gas distribution part 320 may be supplied via different piping. Of course, these pipes may also be connected to different storage tanks.

  Furthermore, the gas distribution device 114 that can be separated and combined can be configured as shown in FIGS. Here, FIG. 14 is a plan view of a gas distribution device according to a sixth embodiment of the present invention, FIG. 15 is an exploded perspective view of the gas distribution device, and FIG. 16 shows the first gas distribution unit and It is a joint sectional view with the 3rd gas distribution part.

  Referring to FIGS. 14 to 16, the gas distribution device 114 according to the sixth embodiment of the present invention includes a second gas distribution unit 320 provided at the lower center portion of the chamber lid 130, and a second gas distribution unit. The purge gas is provided between the plurality of first gas distribution units 310 that are provided on the lower side of the chamber lid 130 in contact with the side surface of the unit 320 and can be combined and separated, and the plurality of first gas distribution units 310. A third gas distributor 330 to be supplied. That is, in the process gas supply unit 300 according to another embodiment of the present invention, the center injection unit 320 is provided in the lower center portion of the chamber lid 120, and the plurality of process gas injection units 310 are in contact with the center injection unit 320. A plurality of purge gas injection units 330 are connected to the lower side of the chamber lid 120 and between the process gas injection units 310.

  Referring to FIGS. 14 and 15, the chamber lid 130 is generally formed in the same shape as the inside of the chamber body 128, for example, in a circular shape, and is formed in a plate shape having a predetermined thickness. The chamber lid 130 is formed with a plurality of inlets 611, 612, and 613 penetrating vertically, but the second gas distribution unit 320, the plurality of first gas distribution units 310, and the plurality of third gas distribution units. A plurality of inlets 611, 612, and 613 are formed in regions corresponding to 330. That is, one second inlet 612 is provided at the center corresponding to the second gas distributor 320, and the first and second inlets are provided at locations corresponding to the plurality of first gas distributors 310. 611 and 612 are provided, and third inflow ports 613 are provided at locations corresponding to the plurality of third gas distributors 330, respectively. Here, one first inlet 611 and at least one second inlet 612 may be provided in a region corresponding to the first gas distributor 310, but the second inlet 612 may be provided. The number of the first and second process gases may be adjusted according to the inflow ratio of the first and second process gases. For example, three second inlets 612 may be provided for one first gas distributor 310. . In addition, one first inflow port 611 and at least one second inflow port 612 formed in a region corresponding to the first gas distribution unit 310 correspond to the shape of the first gas distribution unit 310. It is preferable to form at equal intervals. That is, one first inlet 611 is formed at the center of the region corresponding to the first gas distributor 310, and at least one, for example, three second inlets 612 are provided in the first and second regions. The two inlets 611 and 612 may be formed at equal intervals. On the other hand, the first inlet 611 is connected to a first gas supply pipe 412 that supplies a first process gas, and the second inlet 612 supplies a second gas supply pipe 422 that supplies a second process gas. The third inlet 613 is connected to a purge gas supply pipe 432 that supplies a purge gas. Therefore, the second gas distribution unit 320 and the first gas distribution unit 310 are connected to the first and second gas supply pipes 412 and 422 via the first and second inflow ports 611 and 612, respectively. The first and second process gases stored in the two gas storage units 410 and 420 are supplied. Further, the third gas distributor 330 is supplied with the purge gas from the purge gas supply pipe 432 via the third inlet 613. In particular, the first and second gas supply pipes 412 and 422 may be provided toward the central portion of the chamber lid 130 and may be branched from the central portion and connected to the first and second inlets 611 and 612. The first and second inlets 611 and 612 may be branched from the outside of the chamber lid 130 and connected to the first and second inlets 611 and 612, respectively. Here, the first process gas is introduced in a smaller amount than the second process gas, and the vapor deposition process is performed.

  The second gas distributor 320 is provided at the center of the chamber lid 130 and is generally formed in a cylindrical shape. The second gas distribution unit 320 may be manufactured integrally with the chamber lid 130, or may be manufactured separately from the chamber lid 130 and coupled to the lower center portion of the chamber lid 130. The second gas distribution unit 320 has a second gas inlet 322 formed on the upper side so as to correspond to the second inlet 612 of the chamber lid 130, and at least one injection port formed on the lower side. The Therefore, the second gas distributor 320 is supplied with the second process gas and injects it downward. At this time, the second gas distribution unit 320 injects the second process gas toward the center of the substrate platform 118, but is formed by a plurality of substrates 116 placed on the substrate platform 118. A second process gas is injected into the central space to be formed.

  The plurality of first gas distribution units 310 are arranged so that the inner surface is in contact with the second gas distribution unit 320 and fixed to the lower side of the chamber lid 130. At least two or more such first gas distribution units 320 are provided, and when two are provided, the first gas distribution unit 320 is semicircular. When three or more are provided, the inner side surface in contact with the second gas distribution unit 320 is narrow. It is a width, and it is manufactured in a fan shape that becomes wider as it goes outward. In addition, the plurality of first gas distribution units 310 are not in contact with each other between the adjacent first gas distribution units 310 when coupled to the chamber lid 130, and between the adjacent first gas distribution units 310. It is produced so that a predetermined interval is provided. Furthermore, protrusions 314 may be provided on both side surfaces of the first gas distribution unit 310 in the longitudinal direction. By providing the protrusion 314, the third gas distributor 330 can be coupled between the first gas distributors 310. The first gas distribution unit 310 has a first process gas inlet 614 and at least one second process gas inlet 615 formed on the upper side. It is formed corresponding to the first inlet 611 and the second inlet 612. The first gas distribution unit 310 is described in the above-described embodiment, and as illustrated in the drawings, the first gas distribution plate 134, the second gas distribution plate 136, and the third gas distribution plate 138. These are stacked and produced. The first, second, and third gas distribution plates 134, 136, and 138 may be separately provided and then stacked, or may be manufactured integrally. Here, since the structures and functions of the first, second, and third gas distribution plates 134, 136, and 138 are the same as those described with reference to the accompanying drawings, descriptions of these structures and functions are omitted. To do.

  The third gas distribution unit 330 is formed in a rod shape having a predetermined width and thickness and having a predetermined space therein, and grooves 332 are provided in the longitudinal direction on both side surfaces. In such a third gas distributor 330, the third gas is interposed between the adjacent first gas distributors 310 by engaging the protrusions 314 of the first gas distributor 310 with the grooves 332 on both side surfaces. Distribution unit 330 is inserted. The third gas distributor 330 is provided with a purge gas inlet 616 on the upper side, and purge gas is injected through the third inlet 613 of the chamber lid 130, and the purge gas is injected outside the substrate mounting means 118. Thus, in order to inject the purge gas to the outside of the substrate mounting means 118, the purge gas injection unit 330 may be provided with an injection port on the outer edge of the lower surface facing the upper surface where the purge gas injection port 616 is formed. An injection port may be provided on the outer surface facing the inner surface corresponding to the gas distribution unit 320. That is, when the injection port is provided on the lower surface, the injection port may be provided on the lower surface in the vicinity of the boundary between the lower surface and the outer surface. Note that the temperature measuring device 333 is provided in at least one of the plurality of third gas distribution units 330, preferably at least two third gas distribution units 330 facing each other, and the temperature inside the process chamber 100 is measured. Will do. The temperature measuring device 333 may be provided on the lower surface of the third gas distribution unit 330, and a region where the third gas distribution unit 330 is located may be recessed, and the temperature measuring device 330 may be embedded in the recessed region.

  The gas distribution device 114 according to another embodiment of the present invention has been described and illustrated by taking four first gas distribution units 310 and four third gas distribution units 330 interposed therebetween as an example. The number of the first gas distribution units 310 can be adjusted according to the size of the process chamber 112 and the number of substrates 116. In addition, by providing the plurality of first gas distributors 310 so as to be separable and connectable, it is possible to more easily manufacture the gas distributor 114 that is enlarged as the process chamber 112 is enlarged.

  In addition, as shown in FIG. 17, the second gas distribution unit 320 extends to the space between the central injection nozzle 321 located in the central region of the plurality of first gas distribution units 310 and the first gas distribution unit 310. An extended injection nozzle 324 provided, and a central injection nozzle 321 and an extended flow path 323 that is communicated with the extended injection nozzle 324 and provided with a second process gas. The first gas distributor 310 according to this embodiment is disposed corresponding to the substrate 116. Therefore, it is possible to inject the second process gas into the space between the first gas distributors 310 and supply the second process gas into the space between the substrates 116. As a result, a larger amount of the uncooled second process gas can be supplied to the substrate 116. For this reason, the efficiency of film deposition can be increased by increasing the decomposition efficiency of the second process gas.

  Furthermore, as shown in FIG. 18, an outer heating unit 340 for heating the second process gas to the second gas distribution unit 320 may be further provided outside the second gas distribution unit 320. As the outer heating means 340, electric and optical heating devices can be used. Thereby, the decomposition efficiency can be further increased by heating the second process gas.

  Furthermore, as shown in FIG. 19, the second gas distributor 320 may include a plurality of central injection nozzles 321. As a result, the second process gas can be efficiently supplied to the central region of the substrate mounting means 118. Further, as shown in the figure, a flow path switching device 350 that injects the second process gas from the second gas distributor 320 toward the substrate 116 may be further provided. The channel switching device 350 includes a fixed plate 351, an extended channel 352 extending from the central region of the fixed plate 351 toward the substrate mounting means 118, and a channel switching provided at the tip of the extended channel 352. A nozzle 353. At this time, the fixed plate 351 plays a role of collecting the second process gas injected through the second gas distributor 320. Of course, FIG. 19 shows that a part of the fixing plate 351 is connected and fixed to the first gas distributor 310. However, the present invention is not limited to this, and the fixing plate 351 may be connected and fixed to the chamber lid 130. The extension channel 352 is formed in a rod shape whose tip is closed. For this reason, the second process gas provided to the extension channel 352 is injected toward the substrate 116 via the channel switching nozzle 353 provided in the vicinity of the tip of the extension channel 352. That is, the second process gas provided from the second gas distributor 320 is injected in a direction substantially perpendicular to the substrate 116. For this reason, after hitting the substrate mounting means 118 once, it is diffused in all directions (that is, in the substrate direction). However, in this modification, the second process gas is provided inside the flow path switching device 350 (that is, the extended flow path 352). Since the lower surface of the extension channel 352 is closed, the second process gas is injected in a direction parallel to the substrate 116 via the channel switching nozzle 353 provided on the side surface of the extension channel 352. It becomes possible to do. Thereby, the injection amount of the second process gas injected into the upper spaces of the plurality of substrates 116 can be adjusted uniformly.

  Further, as shown in FIG. 20, the second process gas provided from the second gas distribution unit 320 is heated in a region below the second gas distribution unit 320 in the internal space of the process chamber 112. An inner heating means 360 may be further provided. That is, the inner heating means 360 may be disposed in the space between the second gas distribution unit 320 and the flow path switching device 350. Here, as the inner heating means 360, electric and optical heating devices can be used. Thus, by heating the second process gas injected into the process chamber 112 via the second gas distributor 320, the decomposition efficiency of the second process gas can be further increased.

  Furthermore, as shown in FIG. 21, a separate plasma generator 370 that generates plasma in the region of the process chamber 112 below the second gas distribution unit 320 may be further provided. The plasma generation device 370 includes an antenna 371 located in a space between the second gas distribution unit 320 and the flow path switching device 350, and a power supply unit 372 that supplies plasma power to the antenna 371. Thereby, the second process gas provided from the second gas distributor 320 can be ionized by plasma. Thus, by ionizing the second process gas, the thin film deposition efficiency can be increased. Of course, although not shown, a CCP (Capacitive Coupled Plasma) method can be used instead of the above-described ICP (Inductively Coupled Plasma) method. For this purpose, a separate electrode may be located in the lower region of the second gas distributor 320. A remote plasma method may be applied. Accordingly, a device for converting the second process gas provided to the second gas distribution unit 320 into plasma may be further provided.

  Further, as shown in FIG. 22, a first process gas having a low decomposition temperature is injected into the internal space of the process chamber 112 through the first gas distribution unit 310, and then through the second gas distribution unit 320. A second process gas having a high decomposition temperature can be injected into the internal space of the process chamber 112. That is, a thin film can be deposited by jetting process gas into each partitioned space. Accordingly, it is possible to prevent the first process gas having a low decomposition temperature from being decomposed before being injected into the internal space of the process chamber 112. It is possible to prevent the second process gas having a high decomposition temperature from being injected into the internal space of the process chamber 112 in a cooled state. As a result, the efficiency of thin film deposition is increased, and the use efficiency of the process gas can be increased.

  Further, although not shown, the first gas injection unit 310 may be integrated with the chamber lid 130. That is, the first gas injection unit 310 may be formed inside the chamber lid 130. In the above description, the semi-arrangement type apparatus that processes a plurality of substrates has been mainly described. However, the present invention is not limited to this, and can be applied to an apparatus that processes a single substrate. In this case, a second gas distribution unit that injects the second process gas may be disposed in the peripheral region of the substrate.

  Further, as shown in FIG. 23, a protruding portion 380 protruding upward may be provided in the central region of the substrate mounting means 118. At this time, the second gas distribution unit 320 can be made to be thinner than the first gas distribution unit 310. In this case, when the substrate mounting means 118 is raised, the protruding portion 380 may be partially inserted below the second gas distribution portion 320 between the first gas distribution portions 310. For this reason, the second gas distributor 320 injects the second process gas toward the protrusion 380, and the flow of the second process gas is changed by the protrusion 380 and flows toward the substrate 116.

  By using the substrate processing apparatus according to this embodiment, two or more compounds (GaN, Ga / IN / AlN, TiN, Ti / AlN, etc.) can be simultaneously deposited on a plurality of substrates. Of course, the supply amount of the second process gas supplied to the second gas distributor 320 can be changed according to the necessity of the thin film deposition process. Further, for example, the supply of the second process gas by the second gas distributor 320 can be completely shut off. This means that the process gas can be supplied to the chamber 112 only by at least one of the first gas distribution unit 310 and the second gas distribution unit 320. In addition to the case where the first gas distributor 310 is separated and combined, the first gas distributor 310 and the second gas distributor 320 according to the embodiment of the present invention are attached to the chamber lid 130. Also good.

  The present invention is not limited to the above-described embodiments, and can be realized in various different forms. In other words, the above embodiments are provided in order to complete the disclosure of the present invention and to inform those who have ordinary knowledge of the scope of the invention, and the scope of the present invention is claimed in the claims of this application. It should be understood by scope.

Claims (27)

A first gas distribution unit for injecting at least two or more process gases onto the substrate via different routes;
A second gas distribution section for injecting a process gas having a decomposition temperature higher than an average decomposition temperature of the at least two kinds of process gases onto the substrate;
The gas distribution device according to claim 1, wherein the first gas distribution unit is divided into at least two or more and arranged around the second gas distribution unit, and can be coupled and separated from each other. The first gas distribution unit includes:
A first gas distribution plate connected to a first gas introduction pipe for introducing a first process gas and having a plurality of first passage holes through which the first process gas passes;
A plurality of second passage holes connected to a second gas introduction pipe for introducing a second process gas, aligned with the plurality of first passage holes and passing the first process gas; A second gas distribution plate having a plurality of third passage holes through which the two process gases pass;
A plurality of first and second nozzles which are aligned with the plurality of second and third passage holes and inject the first and second process gases, respectively, and a third gas having a space in which a refrigerant flows. The gas distribution device according to claim 1, further comprising a distribution plate. The first gas distribution plate is
A housing having a space for accommodating the first process gas supplied from the first gas introduction pipe;
The gas distribution apparatus according to claim 2, further comprising a distribution unit provided in the space for uniformly distributing the first process gas introduced from the first gas introduction pipe. .   The gas distribution device according to claim 3, wherein the distribution unit includes a plate and a plurality of supply holes formed by perforating the plate. The second gas distribution plate is
A housing connected to the second gas introduction pipe and providing a space for accommodating the second process gas;
A plurality of pillars incorporating the plurality of second passage holes in the space;
The gas distribution device according to claim 2, further comprising the plurality of third passage holes formed by drilling a lower portion of the housing. The second gas distribution plate is
A partition wall provided in the space;
The gas distribution device according to claim 5, further comprising: a buffer space that is partitioned by a side wall of the housing and the partition wall and that stores the second process gas supplied from the second gas introduction pipe. .   7. The gas according to claim 6, wherein the second gas distribution plate includes a supply hole formed in the partition wall for supplying the second process gas in the buffer space to the space. Dispensing device. The third gas distribution plate is
A housing having the space in which the plurality of first and second nozzles are disposed and in which the refrigerant flows;
The gas distribution device according to claim 2, further comprising a refrigerant flow pipe connected to the housing and supplying or discharging the refrigerant. The housing is
A side wall surrounding the side of the space;
An upper plate located at an upper portion of the side wall and communicated with the first and second nozzles;
The gas distribution device according to claim 8, further comprising a lower plate positioned at a lower portion of the side wall and communicated with the plurality of first and second nozzles.   The housing includes a side plate surrounding a side surface of the space and a lower plate on which the plurality of first and second nozzles are in direct contact with the second gas distribution plate. The gas distribution device described in 1.   The gas distribution device according to claim 1, further comprising a temperature measuring device disposed on at least one of the second gas distribution plate and the third gas distribution plate. The second gas distribution part is provided at the lower center part of the chamber lid,
2. The gas distribution device according to claim 1, wherein the at least two or more first gas distribution units are provided below the chamber lid with the second gas distribution unit as a center.   2. The gas distribution device according to claim 1, wherein at least one of the at least two first gas distribution units is spaced apart from each other.   The gas according to claim 1 or 13, further comprising at least one or more third gas distributors interposed between the at least two or more first gas distributors to inject a purge gas. Dispensing device.   The gas distribution device according to claim 14, wherein the third gas distribution unit injects the purge gas to the outside of the substrate. Protrusions are formed on both side surfaces of the at least two first gas distribution portions,
Grooves corresponding to the protrusions are formed on both side surfaces of the third gas distribution part, the grooves are fitted on the protrusions, and the third gas distribution part is connected to the first gas distribution part. The gas distribution device of claim 15, wherein the gas distribution device is coupled between the gas distribution devices.   The gas distribution device according to claim 14, wherein a temperature sensor is provided at a lower side of at least one of the third gas distribution units. A chamber having a reaction space;
A substrate mounting means which is positioned in the reaction space of the chamber and in which a plurality of substrates are mounted radially on the basis of the center;
A first gas distribution section for injecting at least two or more process gases onto the substrate via different routes; and a process having a decomposition temperature higher than an average decomposition temperature of the at least two or more process gases. A gas distribution device having a second gas distribution unit that injects gas into the space between the plurality of substrates,
The substrate processing apparatus, wherein the first gas distribution unit is divided into at least two parts and is arranged around the second gas distribution unit, and can be coupled and separated from each other. The chamber includes a chamber body in which the reaction space is provided, and a chamber lid that seals the reaction space,
19. The substrate processing apparatus of claim 18, wherein the first and second gas distribution units are fixed to the chamber lid.   The substrate processing apparatus of claim 19, wherein the chamber lid is formed with a refrigerant flow path through which a refrigerant circulates. The first gas distribution unit includes:
A first gas distribution plate connected to a first gas introduction pipe for introducing a first process gas and having a plurality of first passage holes through which the first process gas passes;
A plurality of second passage holes connected to a second gas introduction pipe for introducing a second process gas, aligned with the plurality of first passage holes and passing the first process gas; A second gas distribution plate having a plurality of third passage holes through which the two process gases pass;
A plurality of first and second nozzles which are aligned with the plurality of second and third passage holes and inject the first and second process gases, respectively, and a third gas having a space in which a refrigerant flows. The substrate processing apparatus according to claim 18, further comprising a distribution plate.   The substrate processing apparatus according to claim 18, wherein the second gas distribution unit includes at least one central injection nozzle disposed in a chamber region corresponding to a central region of the substrate mounting unit. The second gas distributor is
A central injection nozzle located in a central region of the first gas distributor;
An extended injection nozzle extending in a space between the first gas distribution parts;
The substrate processing apparatus according to claim 18, further comprising an extension flow path that communicates with the central injection nozzle and the extension injection nozzle.   The substrate processing apparatus according to claim 18, further comprising a flow path switching device that is located in a lower region of the second gas distribution unit and injects a process gas from the second gas distribution unit toward the substrate. The flow path switching device is:
A part of which is connected to each of the plurality of first gas distribution units, and a fixing plate located at the center of the plurality of first gas distribution units;
An extended flow path extending from the central region of the fixed plate toward the substrate mounting means;
The substrate processing apparatus according to claim 24, further comprising a flow path switching nozzle provided in a distal end region of the extended flow path.   A heating means for heating the process gas ejected from the second gas distribution unit or a plasma generator for ionizing the process gas ejected from the second gas distribution unit using plasma is provided. The substrate processing apparatus according to claim 18.   19. The substrate processing according to claim 18, further comprising a protrusion provided on the substrate mounting unit and inserted below the second injection unit between the first injection units. apparatus.

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