TW201038763A - Gas distribution apparatus and substrate processing apparatus having the same - Google Patents

Abstract

Provided are a gas distribution apparatus and a substrate treating apparatus including the same. The substrate treating apparatus includes a chamber comprising a reaction space, a substrate seat unit disposed in the reaction space of the chamber to radially seat a plurality of substrates with respect to a center thereof, and a gas distribution device comprising a first gas distribution part configured to eject at least two source materials onto a substrate through routes different from each other and a second gas distribution part configured to eject a source material having a decomposition temperature greater than an average of decomposition temperatures of the at least two source materials onto the substrate. The first gas distribution part is divided into at least two sections and disposed such that the second gas distribution part is positioned therebetween; and couplable and separable to/from one another.

Description

201038763 VI. Description of the invention: [Technical field to which the invention pertains] The gas distribution device of the invention is configured with a source material. The present invention relates to a substrate processing apparatus, a substrate processing apparatus for a gas distribution apparatus, and a supply of two or more elements. [Prior Art] Generally, in order to manufacture a semiconductor device, a device, and a thin film solar cell, A photolithography process for depositing a film of a specific material, a thin film deposition process on a substrate, a photoresist for exposure or overcoating, a selected area of a film/film, and a transfer process In addition to the patterning selection, the etching of the ruthenium film in the u-peak is performed in the substrate processing apparatus optimized in the vacuum state in the process of the thin film deposition process and the process in the vacuum state. The gas distribution device is used to distribute the process gas in a reaction space. Typically, a chemical vapor phase is performed in a processing chamber in a substrate processing apparatus to uniformly deposit (CVD) a process to deposit a thin film on a substrate. When the cvd process is performed, the temperature of the emulsion dispensing device may increase to produce powder or particles due to the decomposition and reaction of the process gas between the lid of the processing chamber and the gas distribution device or within the gas distribution device. For example, when a plurality of processing gases are simultaneously supplied to the processing chamber to form a composite film containing two or more elements, the plurality of processing gases supplied to the gas distribution device may be in the gas distribution device The reaction is initiated to produce particles. The orifices of the gas delivery device may be blocked by such particles, or the particles may be attached to the substrate to alter the properties of the device. Therefore, the gas distribution device has a multi-layer structure to solve the problem of the generation of particles 146728.doc 201038763. That is, the inside of the gas distribution device is partitioned into an upper space and a lower space. The process gas is supplied to the upper space and the additional process gas is supplied to the lower space to prevent the process gases from reacting with each other in the gas distribution device. A plurality of needle tubes are appropriately arranged and a brazing process is performed to make a gas distribution device. As the area of the gas distribution device increases, the number of tubes increases. Therefore, when using a hard soldering process, the failure rate may increase. In addition, it is possible to repeatedly perform the brazing process to cause thermal deformation, and the stress is inherent to the hard soldered portion to cause leakage. Further, the decomposition efficiency may be attributed to a decrease in the decomposition temperature j between the plurality of process gases, or the process gas may be decomposed when the process gas is injected into the process chamber. As a result, the film deposition speed may be reduced, and the uniformity of the film may be deteriorated. Also, the use of process gases is increased to increase processing costs. Also, the amount of by-products increases to increase maintenance and repair costs. SUMMARY OF THE INVENTION The present invention provides a gas distribution device in which two or more kinds of helium gas are produced by a first gas distribution plate having a plurality of through holes and using a drilling or sheet metal forming process, and by plural A second gas distribution plate, which is coupled to each other and includes a plurality of nozzles in communication with the plurality of through holes, is independently and stably ejected; and a substrate processing apparatus including the gas distribution device. The invention also provides a gas distribution device, wherein the temperature measuring unit is disposed on a gas distribution plate including a plurality of injection nozzles to adjust the refrigerant to the field/span degree and a substrate treatment including the gas distribution device Device. The present invention also provides a gas distribution device in which the decomposition efficiency of the decomposition temperature difference between the plurality of species 146728.doc 201038763 is reduced and the decomposition of the treatment gas before the process gas is prevented is prevented; A substrate processing apparatus including the gas distribution device. The present invention also provides a gas distribution device that is divided into a plurality of gas distribution devices to switch the gas distribution devices to each other/separate from each other; and a substrate processing device including the gas distribution device. According to an exemplary embodiment, a gas distribution apparatus includes: a first gas distribution portion configured to eject at least two source materials onto a substrate by a route different from each other, and - a second gas distribution portion, Configuring to eject a source material having a decomposition temperature greater than an average of decomposition temperatures of the at least two source materials onto the substrate, wherein the first gas distribution portion is separated into at least two segments and disposed such that the first The two gas distribution portions are defined between four segments of 4 to v; and the at least two segments are coupled to each other and separable. The first gas distribution portion may include: a first gas distribution plate coupled to the first intake pipe configured to introduce the first process gas, the first gas distribution plate including a plurality of first through holes The first process gas passes; a second gas distribution plate is coupled to the first influent officer configured to process the second process gas, the second gas distribution plate includes alignment with the plurality of first through holes a plurality of second through holes through which the first process gas passes and a plurality of second through holes through which the second process gas passes; and a third gas distribution plate including the plurality of second through holes and the plurality The third through holes are aligned and configured to inject a plurality of first sprays of the first process gas and the second process gas into a plurality of second nozzles and a space for the refrigerant to flow. I46728.doc 201038763 The first gas distribution plate may include: a casing including a space configured to receive a first process gas supplied from the first intake pipe; and a delivery unit, the female being placed in the space The distribution unit is configured to uniformly distribute the first process gas introduced from the first intake pipe. The dispensing unit may include a "plate" and a plurality of air supply holes defined by perforating the plate.

The second gas distribution plate may include an outer casing connected to the second intake pipe, the outer casing providing a space configured to receive the second process gas; a plurality of cylinders, #included in the space a second through hole; and a plurality of third through holes defined by perforating a lower portion of the outer casing. The second gas distribution plate may include: a partition disposed in the space; and a buffer space 'separated by a side wall of the outer casing and the partition, the buffer m configured to be received from the second The second process gas supplied by the intake air t. The second gas distribution plate may include an air supply hole in the partition to supply the second process gas of the buffer space to the space. The third gas distribution plate may include a first nozzle and a plurality of second nozzle spaces; and a uniform refrigerant flow tube, a refrigerant. An outer casing in which a plurality of housings are disposed, the outer casing including a refrigerant flowing thereto connected to the outer casing to supply or discharge the outer casing may include: - a side wall surrounding a side surface of the space; an upper plate 'positioned And a plurality of [nozzles and the plurality of second nozzles are connected above the sidewall; and a lower plate disposed under the sidewall to communicate with the plurality of first nozzles and the plurality of second nozzles. 146728.doc 201038763 The outer casing: (9): a side wall that surrounds a side surface of the space; and - a lower plate in which a plurality of direct boat first nozzles and a plurality of second nozzles read a second gas distribution plate are disposed The gas distribution device can further include a thermometer disposed in at least one of the second gas distribution plate and the third gas distribution plate. The P-segment can be placed under the side of a chamber cover, W-Yao~ "I-key-saw/knife" and at least two gas-distributing portions are placed under the chamber cover = the second gas distribution part Positioned between the at least two [gas distribution portions. At least one of the at least two first gas distribution plates is spaced apart from each other. The gas distribution device may further comprise at least a third gas distribution portion knife and at least one The third gas distribution portion is disposed between the at least two first gas distribution portions to cut a (fu) gas. The third gas distribution portion may spray the agitating body toward the outer side of the substrate. The protrusion may be formed at the at least Grooves at both side surfaces of the two first gas distribution portions and corresponding to the protrusions are formed at the surface of the third gas distribution portion 504 to insert the protrusions into the grooves, thereby The third gas distribution portion is coupled between the first gas distribution portions. A temperature detector may be disposed under the at least one third gas distribution portion. - According to another exemplary embodiment, a substrate processing device includes a chamber 'which includes a reaction space; a substrate positioning unit disposed in the X reaction space of the chamber to radially position a plurality of substrates relative to a center thereof; 146728.doc 201038763 and a gas distribution device including a first gas distribution portion configured to inject at least two source materials onto the substrate via different routes from each other, and a second gas distribution portion, the second gas distribution knife configured to Generating a source material having a decomposition temperature greater than an average of decomposition temperatures of the at least two source materials onto the substrate, wherein the first gas distribution portion is partitioned into at least two segments and disposed to cause the second gas to be dispensed Partially positioned between the at least two sections; and the at least two sections are coupled to each other and separable. The chamber may include a chamber body in which a reaction space is provided; and a chamber cover Configuring to seal the reaction space, and the first gas distribution portion and the first gas distribution portion are fixed to the chamber cover. The uniform refrigerant path can be disposed in the chamber cover, causing cooling The agent circulates in the refrigerant path. The first gas distribution portion may include: a first gas distribution plate coupled to the first intake pipe configured to introduce the first process gas, the first gas cartridge The body dispensing plate includes a plurality of first through holes for passing the first process gas; a second gas distribution plate coupled to the first intake air t configured to introduce a second process gas, the second gas distribution plate Included with the plurality of first through holes-aligned to pass the first processing gas through the plurality of second through holes and the plurality of third through holes u three gas distribution plates through which the second processing gas passes, The method includes a plurality of first nozzles and a plurality of second nozzles that are aligned with the plurality of second through holes and the plurality of third through holes and configured to respectively spray the first process gas and the second process gas And a space for the refrigerant to flow. The second gas distribution portion may include at least a center injection nozzle, which is 146728.doc -9- 201038763 less than a center injection nozzle in the chamber region of the nozzle. And, in the central area of the substrate positioning unit, the second gas distribution portion may be a central injection nozzle, which is disposed in the center C-go of the distribution portion of the first body, and extends the injection The nozzle extends to the first-gas (four) #A^ path, which is in communication with the central injection nozzle 甲贝策 and the 5 hai extension injection nozzle. The gas distribution device can include a path changing device, and the path changing state member is disposed in the lower portion of the first body, the first body of the first body, and is sprayed toward the soil plate from the S Haidi two gas distribution part < processing gas supplied by the sickle. The path changing device may include: a solid portion and a plate portion connected to the plurality of first gas distribution portions, respectively, wherein the 6 δ Haigu plate is disposed at a center of the plurality of first gas distribution portions; a central portion of the fixed plate extends toward the substrate positioning unit; and a path changing nozzle disposed at an end region of the extended path. The gas distribution device may further include a thin seedling - '7 I栝. a heating unit configured to heat the processing gas injected from the second gas distribution portion; or a plasma generating device configured to ionize from the second gas using electropolymerization: The process gas. The gas distribution device further includes a protrusion disposed on the substrate positioning unit, the protrusion being inserted into a lower side of the second dispensing portion between the first gas distribution portions. [Embodiment] The illustrative embodiments can be understood in more detail by the following description in conjunction with the accompanying drawings. 146728.doc •10· 201038763 In the following 'will be referred to with the accompanying drawings in detail; The present invention is described in terms of specific embodiments. However, the present invention may be embodied in different forms and should be construed as limited to the only embodiments set forth herein. In fact, such examples are provided to enable The invention will be described in detail and the entire disclosure of the present invention will be fully disclosed to those skilled in the art. The same reference numerals refer to the same elements throughout. Figure 1 is a substrate treatment in accordance with an exemplary embodiment. A cross-sectional view of the device, and FIG. 2 and FIG. 3 respectively illustrate the gas of the substrate processing apparatus according to an exemplary embodiment.

A detailed cross-sectional view and an exploded perspective view of the body dispensing device. 4a to FIG. 4 are cross-sectional views illustrating a process of manufacturing a third gas distribution plate according to an exemplary embodiment, and FIG. 5 is a plan view of a second gas distribution plate according to an exemplary embodiment. Referring to FIGS. 1 through 5, the substrate processing apparatus 11 includes: a processing chamber 112 that provides a reaction space; and a gas distribution device ι 4 disposed in an upper portion of the interior of the processing chamber 112 to supply processing gases different from each other; a substrate positioning unit 118, the substrate 116 is positioned on the substrate positioning unit 118 and faces the gas distribution device 114; a substrate inlet 120 through which the substrate 116 is loaded or unloaded; and a discharge hole 122 for processing in the reaction space Gas and by-products are discharged through the discharge holes 122. Gas distribution device 114 is coupled to a radio frequency (rf) power source 124. A matcher 126 for impedance matching can be placed between the gas distribution devices 114 and 11 - power supply ι 24. Alternatively, the gas distribution device 114 may not be connected to the RF power source 124 to use a chemical vapor deposition (CVD) method in which the process gas is simply supplied into the reaction space to form a thin film. The processing chamber 112 includes a chamber body 128 and a chamber cover m that is detachably coupled to the chamber body 146728.doc • 11 · 201038763 to seal the reaction space. The chamber body i28 has a cylindrical or polygonal shape with an open upper side. The chamber cover 130 has a plate shape having a shape corresponding to the shape of the chamber body 128. Although not shown, a sealing member such as a beak ring or a gasket is disposed between the chamber cover no and the chamber body 128 to connect the chamber cover 13 to the chamber body 128 using a fixing member. As shown in Fig. 2, the passage 146 may be disposed to prevent an increase in the temperature of the chamber cover 13G, and the refrigerant circulates in the passage 146 as a temperature adjustment unit by the refrigerant circulation device (10). Since the temperature in the reaction space is transferred to the chamber cover 13 () of the gas delivery device 114 when the substrate 116 is processed in the reaction space, the temperature of the chamber cover may increase. That is, the refrigerant prevents the temperature of the chamber cover (10) from being increased due to the increased temperature between the reactions when it is circulated into the passage U6 disposed in the chamber cover (10). In addition, it prevents an increase in the temperature of the peripheral device disposed at or adjacent to the upper portion of the chamber cover 〇3〇. As shown in FIG. 1, the substrate positioning unit 118 is supported by a support 132. Also, the substrate positioning unit 118 is raised or lowered and rotated by the support member 132. The support member 132 is coupled to a drive unit i3i configured to provide a driving force. A magnetic screw (not shown) for maintaining a 'sealed bellows (not shown) and serving as a rotary sealing unit when the support member 132 is raised or lowered and rotated is coupled to the support member 132 and the drive unit 13 1 between. The substrate positioning unit 丨丨8 and the substrate 116 have the same configuration as each other. Although the substrate positioning unit ns for positioning a substrate 116 is illustrated in the figure, the substrate positioning unit 118 may include a plurality of pedestals on which the substrate 116 is positioned and a plurality of pedestals 146728.doc -12- 201038763 disposed thereon. One and has a plurality of insertion holes to position a plurality of disks of the substrate 116 thereon. As shown in FIG. 2 and FIG. 3, the gas distribution device 114 includes a first gas distribution plate 134 that houses the first process gas to pass the first process gas through the second gas distribution plate 136. The second process gas passes through the first process gas and the second process gas; and a third gas distribution plate 138 that injects the first process gas and the second process gas onto the substrate positioning unit 118. The first gas distribution plate 134 includes a first intake pipe 134a, a first outer casing 134b, a baffle 134c, and a plurality of first through holes 134de. The first intake pipe 13 passes through a central portion of the chamber cover 130 to introduce the first process. gas. The first outer casing 134b has a first space 16〇 that houses one of the first process gases. The shutter 134c serves as a dispensing unit for uniformly distributing the first process gas supplied from the first intake pipe 13A into the first casing 134b. The plurality of first through holes l34d are disposed on the bottom surface of the first housing to pass the first process gas. The second gas distribution plate 136 includes a second intake pipe 136a, a second outer casing 136b, a buffer space 136 (;, a plurality of second through holes n6d and a plurality of third through holes 136e. The second intake pipe 136a passes through the chamber The cover 13 is for introducing a second processing body. The second housing 136b has a second space 162 for accommodating one of the second processing gases. The buffer space 13& separates the lateral space of the second housing 136b by using the spacer ι4〇 Defining and connecting to the second intake pipe 136a to receive the second process gas before supplying the second process gas into the second space 162. The plurality of second through holes 136d are in communication with the plurality of first through holes 134d 146728.doc -13- 201038763 to pass the first process gas. The plurality of third through holes 136e are disposed on the bottom surface of the second outer casing to pass the second process gas. The buffer space "6c is defined by the second outer casing In the side surface of 136b, a gas supply hole 142 is defined in the partition 140 to uniformly supply the second process gas into the second space 162. The partition 140 is disposed along the sidewall of the second outer casing 136b and disposed inside the side wall, and Separated from the side wall by a predetermined distance The buffer space 13 is defined between the partition 140 and the second outer casing 136b. The buffer space 13& receives the second process gas supplied from the second intake pipe 136a. The buffer space 13^ is configured according to the gas distribution device U4. Having a circular or polygonal ring shape. However, when a plurality of second intake pipes 136a are provided and each of the second intake pipes 13A is connected to the side surface of the second outer casing 136b, they may be delimited from each other. a plurality of buffer spaces 136c. Further, the plurality of buffer spaces 13 may be in communication with each other. That is, when the second gas distribution plate 136 has a square shape, it may be disposed at each of the four sides and define a second air intake. The tube and a buffer space U6C. The air supply holes 142 defined in the partition 140 may have a continuous extending slit shape of the same height or a plurality of openings intermittently extending to form an isolated pattern. ^ The third gas distribution plate 138 includes The three outer casings 138a, the plurality of first nozzles 138b, the plurality of second nozzles 13, and the refrigerant flow tube". The third outer casing 138a has a third space 164 for the refrigerant to flow. The plurality of first nozzles 138b are disposed The third outer casing 138a is internally and in communication with the plurality of second through holes 136d to inject a first process gas. The plurality of second nozzles 138c communicate with the plurality of third through holes n6e to inject a second process gas. The flow tube 152 is connected to the center of the third outer casing 13 so that the refrigerant circulates 146728.doc -14 - 201038763. The refrigerant flow tube 152 includes: a refrigerant supply pipe that supplies the refrigerant to the third space 164 And a consistent refrigerant discharge pipe that discharges the refrigerant in the third space 164. The refrigerant flow tube 152 is inserted into the processing chamber U2 through the chamber cover and connected to the side surface of the third outer casing 138 & The refrigerant is circulated to a refrigerant circulation unit (not shown). When the thin film deposition process is performed on the substrate 116 for a long time in the substrate processing apparatus 11A at a temperature greater than about 100 (TC), the gas distribution device 114 may be heated to a heat-resistant temperature or a heat-resistant temperature or higher. In addition, excessive heating may be performed. Seriously occurring at the third distribution plate 138 of the gas distribution device 114 facing the substrate positioning unit 118. Therefore, the refrigerant circulation device for circulating the refrigerant is disposed inside the third distribution plate 138 as a gas distribution prevention The cooling device is overheated by the device 114. In the event of a failure of the refrigerant circulation device, the first thermocouple 144 is disposed on the third gas distribution plate 138 to measure the temperature of the gas distribution plate 114. When the gas distribution plate 114 passes through When heated to a heat resistant temperature or a heat resistant temperature, the heat of the processing chamber U2 is stopped. Further, a second thermocouple (not shown) may be disposed on the second gas distribution plate 136. The first thermocouple and the first The two thermocouples respectively measure the temperatures of the third gas distribution plate 138 and the second gas distribution plate 136, and compare the temperature of the second gas distribution plate 136 with the third gas distribution. The temperature of 138 is used to adjust the temperature of the refrigerant. When the temperature difference between the second gas distribution plate 136 and the third gas distribution plate 138 is large, the plurality of second through holes 136d and the plurality of first nozzles 138b are communicated with each other. And the plurality of third through holes 13 & and the plurality of second nozzles 138c that are in communication with each other may be misaligned with each other due to thermal expansion. Therefore, the refrigerant may be adjusted to prevent the second gas distribution plate 136 from the third gas distribution plate 146728.doc 15 201038763 The temperature difference between 138 is generated. As a result, between the plurality of second through holes 136d and the plurality of first nozzles 138b and between the plurality of third through holes 136e and the plural due to thermal expansion can be prevented. The misalignment between the second nozzles 138. Referring to Figures 2 and 3, the first gas distribution plate 134 of the gas distribution device 114 is fixed to the chamber cover 130, and the storage is introduced via the first intake pipe 13 The first space 16 of the first process gas is defined between the chamber cover 13A and the first gas distribution plate 134. The concave portion 148 is defined in the chamber cover 13A corresponding to the first gas distribution plate 134. And the baffle 13 is disposed on the concave portion 14 8 between the first space 16A defined by the first outer casing 134b. The baffle 13 is rolled to include a plate 149 and a plurality of air supply holes 15, wherein the plate 149 is perforated to recess the first process gas in the boring tool 148 It is smoothly supplied into the first space 160. In order to smoothly supply the first process gas in the recess 48 into the first space 160, any one of the plurality of air supply holes 150 may not match the first intake pipe 134a. That is, the first process gas supplied through the first intake pipe 13A is reflected by the baffle 134e and received into the recessed portion 148. Then, the first process gas is supplied to the first space via the plurality of air supply holes 150. 16 〇. The gas distribution plate 13 4 uses the inside of the gas distribution plate 134 having excellent treatability, and is used to define the first processing body. The first space] 6〇. Next, the bottom surface of the first space 160 is perforated to define a plurality of first through holes (10) for passing the first process gas. Alternatively, in the case where bulk aluminum is not used, the plate formed of aluminum may be bonded to the first gas distribution plate 134 by using a welding process and then the blanking portion thereof may be perforated. The side wall of the first outer casing (10) has a thickness sufficient to cover the buffer 146728.doc -16 - 201038763 space 136c defined in the second outer casing 136b of the second gas distribution plate 136. The reason why the side wall of the first outer casing 134b has a thickness sufficient to cover the buffer space 136c is that the second intake pipe 136a connected to the buffer space 136c is inserted through the side wall of the chamber cover 13 and the first outer casing 134b. Therefore, the side wall of the first outer casing 134b may have a thickness equal to the sum of the width of the side wall of the second outer casing 136b. and the width of the buffer space 13 6c. The plurality of first through holes π 4d of the first gas distribution plate 134 and the plurality of second through holes 136d of the second gas distribution plate 136 are aligned to communicate with each other, and 0 then the second gas distribution plate 136 is coupled to the first A gas distribution plate 134. The second gas distribution plate 136 is made of aluminum having excellent handleability. Passing through the second through hole 136 of the block aluminum (1 is defined, and the portion between the two ends of the block aluminum and between the plurality of second through holes 36d is drilled to define the buffer space 136c and the storage a second space 162 of the second process gas. Next, a portion between the plurality of second through holes 136 (1 is perforated to define a plurality of third through holes 13 6 e. Referring to Figures 3 and 5, the block aluminum The bottom surface is drilled to maintain a constant thickness to form a plurality of cylinders 166 having second through holes 136d. The lower portions of the plurality of cylinders 166 form a bottom surface of the second outer casing defining a plurality of third through holes 136e. Each of the plurality of cylinders 166 has an isolated pattern, and portions between the plurality of cylinders 166 are drilled to define a second space 162 that is in communication with each other. Although each of the plurality of cylinders 166 can There is a cylindrical shape equal to the shape of the respective second through holes 136d, but the present invention is not limited thereto. For example, considering the process convenience, each of the columns 166 may have the structure as shown in FIG. Square shape. When each of the plurality of cylinders 166 has a square shape In the shape, the sides of the respective cylinders 166 can be rounded 146728.doc • 17- 201038763 edge = knife to make the second processing gas flow smoothly. The bulk aluminum is drilled to form the side wall of the second outer casing 136b The second space 162 is defined and the partition 140 separates the buffer space 136c. The partition 14 is treated to define the air supply hole 142, and the second process gas is supplied through the air supply hole 142 at the upper portion of the partition 14〇. The body 166 has a second through hole 136d in Figs. 3 and 5, but the present invention is not limited thereto. For example, one column 166 may have two or more second through holes i36d, if necessary. When a cylinder 166 has two or more second through holes 136d, since the number of the third through holes 136e is smaller than the number of the second through holes l36d, it may be supplied through the plural as compared with the first processing gas. a relatively large amount of the second processing gas of the first through hole 13 and the plurality of second through holes 136d. Therefore, the first processing gas and the second processing gas are adjusted to be formed in a column 166. The number of the second through holes 136d. The plurality of first through holes 134d of the feed plate I34 and the plurality of second through holes U6d of the second gas distribution plate 136 are aligned to communicate with each other. When the second gas distribution plate 136 is in contact with the first gas distribution plate 134 The surface of the lower portion of the first outer casing 134b of the first gas distribution plate 134 contacts the upper portion of the plurality of cylinders 166. Therefore, the first process gas is transferred to the plurality of first through holes md of the first gas distribution plate! a plurality of second through holes 136d of the second gas distribution plate 136 while maintaining a seal of the first process gas. Here, the second through holes (10) adjacent to the third through holes 136e have the same distance from each other, that is, The second through hole i 3 is defined in the middle of the four second through holes. When the second gas distribution plate 136 is coupled to the first gas distribution plate 134, the first intake valve 136a is inserted through the chamber cover 130 and the first gas 146728.doc -18- 201038763 body distribution plate 134 to the buffer space 136c in. The buffer space i36c and the second space 1 62 are processed to form a partition 140 between the buffer space 136c and the second space ι62, and the second process gas accommodated in the buffer space 136c is supplied to the second space via the air supply hole 142. 162.

The breast-distributing plate 38 is engaged to the second gas distribution plate 136 such that each of the second through hole 136d and the third through hole i36e of the first gas distribution plate 136 is the same as the second gas distribution plate 138 Each of the nozzles i38b and the second nozzles 138c are in communication. The third gas distribution plate 138 is made of stainless steel or aluminum having high heat resistance and corrosion resistance. The third gas distribution plate 38 is manufactured through the following process. As shown in Fig. 4A, a first plate 170 and a second plate 172 formed of stainless steel are prepared. The first plate 17A and the second plate m are perforated to form a plurality of first openings 1 74 and a plurality of second openings 76 corresponding to the plurality of first nozzles 1381 and the plurality of second nozzles 13. As shown in Fig. 4B, a plurality of needle tubes H8 serving as a plurality of first nozzles 138b and a plurality of second nozzles 138c for ejecting the first process gas and the second process gas are prepared. Next, a plurality of tubes are inserted into the first opening ^4 and the second opening 176 and arranged. A paste containing a metal filling material 18 is applied to the first plate 170 and the second plate 172 in which a plurality of tubes are arranged. As shown in FIG. 4C, a brazing process is performed to couple a plurality of tubes 178 to the first plate 170 and the second plate 172, thereby forming a plurality of first processes for injecting the first process gas and the second process gas. The nozzle 138b and the plurality of second nozzles are: a plurality of s 178 ′ that are disposed outside the third space 164 and protrude from the first plate 17 且 and then a side plate a] formed of stainless steel is disposed to use the side plate 18 The ice is connected to the side surface between the moth and the second plate 172, 146728.doc.] 9 201038763 to form a third outer casing (10) having a third space i64 for the refrigerant to flow. The refrigerant flow (4) 152, which is inserted through the chamber cover to the side surface of the gas distribution device ι4, is connected to the side surface of the third outer casing. The second refrigerant flows to cool the gas distribution device u4. As shown in the figure, a plurality of tubes 178 inserted into the plurality of first openings m and the plurality of first opening openings 6 protrude beyond the first plate 17 and the second plate m and at the first plate 17 () A paste containing a filler metal is applied to the second plate 172. That is, the paste applied to the first plate 17 is placed in the door 4 and the paste applied to the second plate 172 is placed in the third space 164. As shown in FIG. 4C, a plurality of tubes disposed outside the third space 164 and protruding from the first plate 17 and the second plate m are cut so that the first plate 170 and the second plate 172 and the plurality of tubes 178 They are flush with each other. Although not shown in FIGS. 4A to 4C, a temperature measuring unit such as a thermocouple may be disposed on the first plate 17 or the second plate 172 to measure the temperature in the brazing process when the temperature exceeds a reasonable temperature. Stop the brazing process. Although a plurality of needle tubes are formed using the same material as the first plate 170 and the first plate 1 72, the present invention is not limited thereto. For example, t, if necessary, a needle tube can be formed using a material different from the first plate 17A and the first plate 172. The brazing process represents a method in which a filler metal is added to two binders to be joined at a temperature of about 45 Torr (>c or 45 〇c>c to join the two binders at a temperature lower than the melting point. To each other, the processing temperature of the brazing process can be changed according to the type of the base material to be joined and the type of the paste including the filler metal. The second through hole 136d of the first gas distribution plate 136 and the third through hole 13^ Each of the plurality of first nozzles 138b and 146728.doc -20- 201038763 of the second gas distribution plate 138 is aligned and in communication with each other. When the third gas is dispensed When the plate 138 is coupled to the second gas distribution plate 136, the lower portion of the second outer casing 136b of the second gas distribution plate 136 contacts the upper portion of the third outer casing of the third gas distribution plate 138. Therefore, the first treatment The gas and the first process gas pass through the plurality of second through holes 136d and the plurality of third through holes 136e and the plurality of first nozzles 138b and the plurality of second nozzles 13 and the nozzles are incident on the substrate positioning unit 118 while Maintain the first process gas and the second Sealing of the gas. Although the gas dispensing device 114 is coupled to the chamber cover 13A in Figures 2 and 3, the gas dispensing device 114 can be disposed spaced from the chamber cover 130. When the chamber cover 130 and the gas distribution device When separated by 114, a separate rear plate connected to the first intake pipe 13A is disposed on an upper portion of the first gas distribution plate 134. Here, the first process gas may include, for example, trimethylgallium (TMQa) , biscyclopentadienyl magnesium (CpzMg), trimethyl aluminum (TMA1), and tridecyl indium (TMIn), and the second process gas may include nitrogen such as N2 & NH3, helium gas such as SiH4 and O SlH6, and Only 2. These gases can be used to form a light-emitting device. For example, 'When a GaN layer is formed on the substrate 116, TMG can be used as the first process gas' and NH3 can be used as the second process gas. An exploded perspective view of an exemplary embodiment of a gas delivery device and FIGS. 7A-7C are cross-sectional views illustrating a process of a second gas distribution plate in accordance with another exemplary embodiment. Gas distribution according to another exemplary embodiment The device has an exemplary embodiment as previously described The gas distribution device has the same function. In addition, the components of the gas distribution device according to another exemplary embodiment may be simplified to reduce manufacturing costs. In the exemplary embodiment 146728.doc • 21 · 201038763 'exemplary with the previous description The same components of the embodiment are denoted by the same reference numerals. Referring to Fig. 6 'gas distribution device 114 includes: a first gas distribution plate 134 that houses the first process gas to pass the first process gas; a distribution plate 136' that houses the second process gas to pass the first process gas and the second process gas; and a third gas distribution plate 138 that injects the first process gas and the second process gas onto the substrate positioning unit 118 . The first gas distribution plate 134 includes a first intake pipe 134a, a first outer casing 134b, and a baffle 13 complementing a plurality of first through holes 13A. The first intake pipe passes through the cavity to the central portion of the crucible 130 to introduce the first process gas. The first outer casing 134b has a first space 16 收纳 accommodating one of the first process gases. The baffle 134c serves as a dispensing unit for uniformly distributing the first process gas supplied from the first intake pipe 13A into the first outer casing 134b. The plurality of first through holes 134d are defined in the first outer casing 13 The bottom surface is such that the first process gas passes. The first outer casing 134b includes: a first side wall 19〇a surrounding the first space 160; and a first lower plate 19〇b disposed under the first side wall i9〇a and having a plurality of first through holes 13 4d. The second gas distribution plate 136 includes a second intake pipe 136a, a second outer casing 136b, a buffer space 136c, a plurality of second through holes n6d, and a plurality of third through holes 136e. The second intake pipe 136a passes through the chamber cover 13 to introduce a second process gas. The second outer casing 136b has a second space 162 that houses one of the second process gases. The buffer space 13^ is defined by dividing the lateral space of the second outer casing 136b by using the partition ι4〇 and is connected to the second intake pipe 13 to supply the processing gas to the 146728.doc -22-201038763 The second process gas is received before the second space 16 2 . A plurality of second through holes 136d are in communication with the plurality of first through holes 134d to pass the first process gas. A plurality of third through holes 136e are defined in the bottom surface of the second outer casing 136b to pass the second process gas. The second outer casing n6b includes a second side wall 192a' surrounding the peripheral portion of the second space 162; and a first lower plate 192b disposed under the second side wall 192a and having a plurality of first through holes 134d and plural A third through hole i36e. The buffer space 〇 136 is defined in the side surface of the first outer casing 136b. The air supply hole 142 is defined in the partition 140 to uniformly supply the second process gas into the second space 162. The partition 14 is along the second The side wall 192a of the outer casing 136b is disposed and spaced apart from the side wall 192a by a predetermined distance. The buffer space 136c is defined between the partition 14 〇 and the second outer casing 136b. The buffer space 136c is received by the second intake pipe 13 for supplying the second process gas. The buffer space 136c has a circular or polygonal ring shape according to the configuration of the gas distribution device ι 4. However, when a plurality of second intake pipes 136a are provided and each of the second intake pipes 136a is connected to the The plurality of buffer spaces 136c that are isolated from each other may be defined by the side walls 192& of the outer casing 136b. Further, the plurality of buffer spaces 136c may be in communication with each other. That is, when the second gas distribution plate 136 has a square shape, it may be on four sides. Each of the second intake pipe 136a and a buffer space 13 is disposed and defined. The air supply holes 142 defined in the partition 140 may have continuous extending slit shapes of the same height or intermittently extend to form a partition. The plurality of openings of the pattern. The third gas distribution plate 138 includes a third outer casing 138a, a plurality of first nozzles 138b, a plurality of second nozzles 138c, and a refrigerant flow tube (not shown). The first outer 138a has a The third space 丨 64 of the refrigerant flows. 146728.doc -23- 201038763 The plurality of first nozzles 138b are disposed inside the third outer casing 138a and communicate with the plurality of second through holes l36d, respectively, to eject the first process gas. A plurality of second nozzles 138c are in communication with the plurality of third through holes 1 36e to inject a second process gas. The refrigerant flow tube is coupled to the third outer casing 1383 to circulate the refrigerant. The third outer casing 138a includes: a third a sidewall 194a surrounding the third space 164; and a third lower plate 194b disposed below the third sidewall 194a and including a first nozzle 138b and a second nozzle 138c. The refrigerant flow tube includes: - a refrigerant a supply pipe that supplies the refrigerant into the third space 丨 64; and a uniform refrigerant discharge pipe that discharges the refrigerant in the third space 164. The refrigerant flow officer is inserted through the chamber cover 130 To the processing chamber 丨丨2 and connected to The third side wall 194a of the third outer casing 138a. The refrigerant is circulated to a refrigerant circulation device (not shown). The third gas distribution plate 138 is manufactured through the following process. As shown in Fig. 7 and 8, it is prepared by a plate of stainless steel or aluminum is formed. The plate 22 is perforated to form a plurality of first openings 174 and a plurality of second openings 17 corresponding to the plurality of first nozzles 13 and the plurality of second nozzles 13 As shown in 7b, a plurality of needle tubes 178 are prepared for use in the plurality of first nozzles 1381 and the plurality of second nozzles 138c for injecting the first process gas and the second process gas. Next, a plurality of tubes 178 are inserted into the plurality of first openings 174 and the plurality of first-opening α 176 and arranged. A paste containing a filler metal is applied to the plate 222 in which a plurality of tubes 178 are arranged. As shown in FIG. %, a brazing process is performed to couple a plurality of tubes 178 to the first plate 17 and the second plate 172, thereby forming a plurality of processes for injecting the first process gas and the second process gas. The first nozzle 138b and the plurality of second nozzles 138e. The side plates 182 formed by the steel or 146728.doc -24-201038763 steel are disposed to allow the side plates 182 to surround the third space (6) and the connecting plate 2 is viewed from the circumferential portion, and then the material is connected to the plate 220 and the side plates 182. Forming a first outer portion having a third space 164 for the refrigerant to flow; λ 38a is connected to the third outer casing through the chamber cover 13 and inserted into the side surface of the gas distribution device I The side surface of the coffee. The second refrigerant flows to cool the gas distribution device 丨丨4.

In another exemplary embodiment, the third outer portion 1 - 38a of the third gas distribution plate 138 does not include the upper plate. The third outer casing 138a includes a third side wall 19A and a third lower plate (10). Therefore, the plurality of tubular first nozzles u8b and the plurality of tubular second nozzles U8c communicating with the plurality of second through holes 136d and the plurality of third through holes 136e directly contact the second outer casing (10) to constitute the second gas distribution plate The first of 136 - the lower plate 192b. Since each of the plurality of first nozzles and the plurality of first nozzles 138e has a tube shape having a certain thickness, the upper surface of the plurality of first nozzles 13 and the plurality of second nozzles i38c are in contact with the second lower portion. The lower portion of the plate 192b. Therefore, in another exemplary embodiment, the third gas distribution plate 138 can be fabricated via a relatively simple process as compared to the process of the previously described exemplary embodiment. FIG. 8 is a gas according to another exemplary embodiment. An exploded perspective view of the dispensing device, and FIG. 9 is a plan view of a substrate positioning unit in accordance with another exemplary embodiment. This exemplary embodiment differs from the previously described exemplary embodiments in that the gas distribution plate and the third gas distribution plate are separated when the gas distribution device is a large gas distribution device. The components of this exemplary embodiment that are identical to the components of the previously described exemplary embodiments are denoted by the same reference numerals. 146728.d〇) • 25· 201038763 Referring to FIG. 8, the gas distribution device 114 includes a first gas distribution plate 134 that houses the first process gas to pass the first process gas, and a second gas distribution plate 136. Storing a second process gas for passing the first process gas and the second process gas; and a third gas distribution plate 138 for injecting the first process gas and the second process gas to the substrate positioning unit of the processing chamber (in the figure Not shown). The first gas distribution plate 134 includes a first intake pipe 134a, a first outer casing 13 4b, a baffle 13 4c, and a plurality of first sub-gas distribution plates 2A. The first inflator 134a passes through the chamber cover 130 to introduce a first process gas. The first outer casing 134b has a first space 16〇 that houses one of the first process gases. The shutter 13 is used as a dispensing unit for uniformly distributing the first process gas supplied from the first intake pipe 134a into the first casing 134b. The plurality of first sub-distribution panels 200 include a plurality of first through holes 134d defined in a bottom surface of the first outer casing 134b to pass the first process gas. Each of the first sub-flute distribution plates 200 has a shape that varies depending on the opening of the processing chamber. In this exemplary embodiment, the first sub gas distribution plate 200 has a fan shape, and the end of the first sub gas distribution plate 2A adjacent to the central portion of the first gas distribution plate 134 has an arc shape so that the first A sub gas distribution plate 200 is suitable for use in a cylindrical processing chamber and stacking and processing a plurality of circular wafers as substrates. When a plurality of first sub-gas distribution plates 2 〇 组合 are combined to assemble into the first gas distribution plate 丨 3 4 , a circular shape having a hollow shape is formed at a central portion thereof. As shown in FIG. 9, in the case where the wafer is used as a substrate and a plurality of substrates 116 are stacked on the substrate positioning unit U8, the substrate positioning unit 118 includes a plurality of bases of the above-mentioned 146728.doc • 26-201038763 positioning substrate 116. A plurality of discs 212 of the base 21 are placed on the seat and above. When the first gas distribution plate 134 has a circular shape, the plurality of sub gas distribution plates 200 are separated by a plurality of straight lines passing through the center of the first gas distribution plate 134. Here, the plurality of first sub-gas distribution plates 200 have the same size when the first gas distribution plate 134 includes six first sub-gas distribution plates 200, and the first sub-gas adjacent to the central portion of the first gas distribution plate 134 Each of the distribution boards 200 has about 6 inches. The angle. When the first gas distribution plate 134 has a square shape, the first sub gas distribution plate is divided into a plurality of square shapes having the same size as each other. The first peripheral device 134b includes: a first sidewall 丨9〇a surrounding the first space 160; and a first lower plate 19〇b disposed under the first sidewall 19〇& and having a plurality of A through hole 134d. As shown in Fig. 9, a plurality of pedestals 210 are not disposed at a central portion of the disk 212. Therefore, since the substrate 116 is not positioned on the central portion of the disk 212, even if the first gas distribution plate 134 has a hollow at its central portion, the substrate processing process is not affected. Further, since the ends of the respective first sub-gas distribution plates 200 have an arc shape to form a hollow at the central portion of the first gas distribution plate 134, the first sub-gas distribution plate 2 can be easily manufactured and assembled. When the end of the first sub-gas distribution plate 200 extends until the center portion of the processing chamber is disposed, it may be difficult to correspond to the end of the first sub-gas distribution plate 200 at the first outer portion: the first lower plate i90b of the ^134b A plurality of first through holes 134d are uniformly formed in the middle. The first intake pipe 134a branches into a plurality of sub intake pipes 2〇4 to supply the first process gas to each of the plurality of first sub gas distribution plates 2 146 146728.doc • 27- 201038763 In space 160. One or more first sub-intake ducts 204 are uniformly connected to the first sub-gas distribution panel 200. The first sub-intake pipe 204 may be buried in the chamber cover 130 to supply the first process gas at a central portion of the first sub-gas distribution plate 2, or the first sub-intake pipe 204 may be self-contained The gas pipe 134a branches to the first sub-intake pipe 2〇4 outside the processing chamber, and then the first sub-intake pipe 204 can pass through the chamber cover 130 to supply the first process gas to the first sub-gas distribution plate 200 In the first space. Unlike the previously described exemplary embodiment, the 'recessed portion 148 may not be disposed in the chamber cover 13〇 in this exemplary embodiment. The stepped portion 230 is disposed along the inner circumference of the side wall 190a of the first outer casing 134b. When the shutter 134c is placed at the stepped portion 230, the storage space 232 of the first process gas supplied from the first sub-intake pipe 2〇4 is defined above the inner casing 134c of the first casing 丨 34b. The shutter i34c uniformly supplies the first process gas in the storage space 232 into the first space 16A. The first gas distribution plate 136 includes a second intake pipe (see reference numeral l36a of FIG. 1), a second outer casing 136b, a buffer space 13 core, a plurality of second through holes 136d, and a plurality of second sub-gas distribution plates 2 6. A second intake pipe 136 & passes through the chamber bore 130 to introduce a second process gas. The second outer casing 13A has a second space 162 for accommodating the second processing gas. The buffer space n6c is defined by separating the lateral space of the second outer casing 136b by using the spacer buckle, and is connected to the first air intake pipe 13 The second process gas is received prior to supplying the second process gas to the second space 162. A plurality of second through holes 136d are in communication with a plurality of first holes 134d to pass the first process gas. The plurality of first sub-gas distribution plates 206 include 146728.doc -28- 201038763 defined in the bottom surface of the second outer casing 136b, a plurality of second through holes 1366 for passing the second process gas. The second sub gas distribution plate 206 has the same shape as the first sub gas distribution plate 2A. Therefore, like the first sub-gas distribution plate 200, the second sub-gas distribution plate 2〇6 has a sector shape and is adjacent to the second gas distribution plate 136. The end of the first sub gas distribution plate 2〇6 of the file has an arc shape. Further, when a plurality of second sub-gas distribution plates 2 to 6 are assembled to be assembled into a second gas distribution plate 136, the second gas distribution plate 136 has a circular shape having a hollow shape at a central portion thereof. The second outer casing 136b includes a second side wall 192a surrounding the peripheral portion of the second space 162, and a second bottom surface 192b disposed below the second side wall 192a and having a plurality of first through holes 134d and a plurality of The third through hole 13 is a core. The buffer space is defined in the lateral space of the second outer casing 136b. A gas supply hole 142 is defined in the partition 14〇 to uniformly supply the second process gas into the second space 162. The 35-plate 14 turns along the side wall 192a of the second outer casing 136b and is disposed inside the side wall 192& and spaced apart from the side wall 192a by a predetermined distance. The buffer space 136c is defined between the partition 140 and the second outer "and 136b. The buffer space 136c accommodates the second process gas supplied from the second intake pipe 136a. The air supply apertures 142 defined in the partition 140 may have a continuous extension slit shape of the same degree of continuation or a plurality of opening σs intermittently extending to form an isolated pattern. The second gas distribution plate 138 includes a third outer casing 138a, a plurality of first nozzles 138b, a plurality of second nozzles 13" and a plurality of sub-gas distribution plates 208. The second outer 138a has a third space 供 64 for the refrigerant to flow. The plurality of first nozzles 138b are disposed inside the third outer casing 13b and communicate with the plurality of second through holes 136d to eject the first process gas. The plurality of second sprays 146728.doc • 29· 201038763 the mouth 138c and the plurality of The third through holes 136e are in communication to inject a second process gas. The plurality of sub gas distribution plates 208 include a refrigerant flow pipe connected to the third outer casing 13 8a to circulate the refrigerant. 8a includes: a third sidewall 丨 94a surrounding the third space 丨 64; and a third lower plate 194b disposed below the third sidewall 194a and including a first nozzle 138b and a second nozzle 138e. The flow tube includes: a refrigerant supply pipe that supplies the refrigerant into the third space 丨 64; and a refrigerant discharge pipe that discharges the refrigerant in the third space 164. The refrigerant flow pipe passes Chamber cover 130, inserted into The chamber 112 is connected to the side surface of the third outer casing 138a. The refrigerant is circulated to a refrigerant circulation device (not shown). The second sub gas distribution plate 208 and the first sub gas distribution plate 2 The second sub gas distribution plate 206 has the same shape. Therefore, like the first sub gas distribution plate 200 and the second sub gas distribution plate 2〇6, the third sub gas distribution plate 2〇8 has a fan shape and is adjacent to The end of the second sub-gas distribution plate 2〇8 of the central portion of the third gas distribution plate 138 has an arc shape. Further, when a plurality of second sub-gas distribution plates 2〇8 are assembled to be assembled into the third gas distribution plate 138 The third gas distribution plate 138 has a circular shape having a hollow shape at a central portion thereof. The third outer casing 丨 38b includes a third side wall 丨 94a that surrounds a peripheral portion of the second space 164; The lower plate 94b is disposed below the third side wall 194a and includes a plurality of first nozzles 138b and a plurality of second nozzles 138c. In the exemplary embodiment, the third outer casing 13 of the third gas distribution plate 38 83 includes a third sidewall 19 etched and The lower plate 19 is servant. Further, a plurality of tubular first nozzles 138b and a plurality of tubular second nozzles 138 are connected to the plurality of 146728.doc -30-201038763 first through holes 136d and the plurality of third through holes 136e ( Directly contacting the second lower plate 192b of the second outer casing 136b constituting the second gas distribution plate 136. If necessary, the first peripheral device 138a may include an upper plate in communication with the plurality of first nozzles and the plurality of second nozzles 138c. Each of the plurality of first nozzles 13 and the plurality of second nozzles 138 () has a tube shape having a certain thickness, and thus the surface of the plurality of first sprays f138b and the plurality of second nozzles 138c The lower portion of the second lower plate 192b is contacted. Thus, in this exemplary embodiment, the third gas distribution plate 138 can be fabricated via a relatively simple process as compared to the processes of the previously described exemplary embodiments. The gas distribution device 114 according to another exemplary embodiment may spray at least a portion of a plurality of process gases onto an upper portion of the substrate 116 and supply a process gas having a high decomposition temperature among the plurality of process gases to A space between the plurality of substrates 116 (for example, a central upper region of the substrate positioning unit 118). In this case, a plurality of substrates 116 may be positioned on the substrate positioning unit 118 and disposed radially with respect to the center of the substrate positioning unit i 8 . Therefore, the processing gas having a high decomposition temperature can be supplied to the region having the highest temperature of the chamber cover region to improve the decomposition efficiency. The gas distribution device 丨丨 4 and the substrate processing device including the gas distribution device i i 4 according to another exemplary embodiment will be described below. Descriptions of the overlapping portions with the above exemplary embodiments are omitted. 10 and 11 are a cross-sectional view and a plan view, respectively, of a substrate processing apparatus according to another exemplary embodiment, and FIG. 12 is a cross-sectional view illustrating a gas dispensing apparatus of a substrate processing apparatus according to another exemplary embodiment. 146728.doc 31 201038763 Referring to FIGS. 10 and 12, a substrate processing apparatus according to this exemplary embodiment includes a processing chamber 112 that provides a reaction space, and a substrate positioning unit 118 that is disposed in the processing chamber 112. The reaction space is positioned to position the substrate 116; and a gas distribution device 114 disposed in the reaction space of the processing chamber 112 to supply process gases different from each other. Further, the gas distribution device 114 includes a first gas delivery portion 31A and a second gas delivery portion 320. Here, a plurality of first gas delivery portions 31A are provided. Each of the plurality of first gas distribution portions 310 includes a first gas distribution plate 134, a second gas distribution plate 136, and a third gas distribution plate 138 stacked on each other. In the gas distribution device 14 according to this exemplary embodiment, the first gas delivery portion 310 supplies at least a portion of the plurality of process gases to the upper portion of the substrate 116. Further, the second gas distributing portion 32 supplies the gas having a high decomposition temperature in the plurality of processing gases to a space between the plurality of substrates 116 (for example, a central upper region of the substrate positioning unit ι 8). Therefore, a process gas having a high decomposition temperature can be injected into the region of the cavity to the cap region having the highest temperature to improve the decomposition efficiency. That is, the gas distribution device 114 is disposed on the bottom surface of the lower portion of the chamber cover 13 and supplies a process gas having a high decomposition temperature to the region having the most temperature in the region where the gas distribution device 114 is disposed. Therefore, the film deposition efficiency can be improved, and the residual reaction gas which is not reacted can be reduced. The average temperature of the decomposition temperatures of the plurality of process gases can be calculated to supply a treatment material having a decomposition temperature greater than the average temperature into the space between the plurality of substrates U6. Here, the processing gas having a decomposition temperature greater than the average temperature is privately a processing gas having a high decomposition temperature. Further, it is cooled and then supplied with a processing gas having a decomposition temperature of the average temperature of 146728.doc • 32· 201038763. Therefore, it is possible to prevent the processing gas of the lower decomposition temperature from being dissolved in the first gas distribution portion 310. The gas distribution device 114 includes a process gas storage unit cutter 400 through which the process gas is supplied. Further, the gas distribution device 114 further includes a refrigerant-storage portion 500 through which the refrigerant for the cold process gas is supplied. Ο Ο A device configured to deposit two monolayers onto a substrate using two process gases as described below will be primarily described. That is, the first processed milk storage portion 41 and the second processing gas storage portion are provided to respectively respectively process the first process gas storage portion 41 and the second process gas storage portion into the first process gas and the second process gas. Sprayed onto the substrate ΐ6. Here, the first process gas storage portion 41 and the second process gas storage portion side may store a material having a gaseous state and a material having a liquid state. For convenience, the first process gas storage portion 4, the second process gas storage portion 420, is referred to as a process gas storage portion 400. Also, this exemplary embodiment is not limited thereto, and a large amount of source material can be used. Here, the first processing gas may include materials such as TMGa, Cp2Mg, TMA1ATMIn, and the second portion may include nitrogen such as N2 & NH gas, cu '% nitrogen, gas such as S1H4 and SiH0, and H2 . The first gas distribution 31 receives the first process gas and the second process gas via the first gas supply pipe 412 and the second gas ί, 422, to pass the first process gas and the second process gas through the separation space (or The route) is supplied to the substrate 116. The first gas distribution portion 31 cools the first process gas and the second portion 146728.doc -33· 201038763 to supply the first process gas and the second process gas through the cold portion. The first gas distribution portion 310 includes a first gas distribution plate 134', a second gas distribution plate 136, and a second gas distribution plate 138. The first gas distribution plate receives the first process gas of the first gas storage portion 41 via the first gas supply pipe 412 to supply the first process gas. The second gas distribution plate 136 receives the second process gas of the second gas storage portion 42 via the second gas supply pipe 422 to supply the second process gas. The third gas distribution plate n8 cools the supplied process gas. Here, the first gas distribution plate 134, the second gas distribution plate 136, and the third gas distribution plate 138 are vertically stacked with each other. As shown in FIG. 7 , the second gas distribution plate 138 may be disposed between the first gas distribution plate 134 and the second gas distribution plate 136 and the substrate positioning unit 丨丨 8 to prevent the first gas distribution plate 134 and the second gas. The process gas within the distribution plate 136 is decomposed due to the heat of the substrate positioning unit 118. As noted above, each of the gas distribution plates can vary differently depending on the number of process gases. The gas distribution plate 134 includes a first intake pipe 134a, a first outer casing 134b, and a plurality of first through holes 134d. The first intake pipe 13 is passed through the chamber cover 130 to introduce a first process gas. The first outer casing 134b has a first space 160 that houses one of the first processing gases. A plurality of first through holes 134 (1 extend from the first outer casing 134b to pass the first process gas. Further, the first gas distribution plate 134 may further include a baffle (not shown) that will treat the first process gas Uniformly distributed into the first outer casing 134b. The second gas distribution plate 136 includes a second intake pipe 136a, a second outer casing 136b, a plurality of second through holes 136 (1 and a plurality of second through holes 136e. The gas pipe 136a passes through the chamber cover 13 to introduce a process gas. The second outer casing 13 6b has a second space 162 accommodating the second process gas 146728.doc -34 - 201038763. The plurality of second through holes 136 (1) And communicating with the plurality of first through holes 134d to pass the first process gas. The plurality of third through holes 13 are defined in the bottom surface of the second outer casing 136, b to pass the second process gas. The first gas distribution plate 138 The third outer casing 138a, the plurality of first nozzles 138b and the plurality of second nozzles 138c are included. The third outer casing 138& has a third space 164 for the refrigerant to flow. The plurality of first nozzles 38b are disposed on the third outer casing 138a. Internally and separately connected to a plurality of second through holes 136 (1) The first helium process gas is injected. The plurality of second nozzles 138c are in communication with the plurality of third through holes 1366 to inject a second process gas. Further, the third gas distribution plate 138 further includes a refrigerant flow tube 152 'the refrigerant The flow tube 152 is connected to the third outer casing 138a to circulate the refrigerant. The refrigerant flow tube includes: a refrigerant supply pipe 152a that supplies the refrigerant into the third space ι 64; and a refrigerant discharge pipe 152b, which discharges the refrigerant in the third space 164. The first to second emulsion dispensing plates 134, 136 and 138 may have the same components as those described with reference to Figures 1 to 9. 〇 As described above, The first process gas supplied to the first space 160 of the first gas distribution plate 134 passes through the first through hole i36d passing through the second space 162 of the second gas distribution plate 136 and the first nozzle 138b of the third gas distribution plate 138 Supplyed into the internal space of the processing chamber 112 (ie, the reaction space) - again 'the second processing gas supplied to the second space 162 of the second gas distribution plate 136 via the third through hole 136e and the third Second spray of gas distribution plate 138 The nozzle 138c is supplied into the internal space of the processing chamber 112. The first process gas and the second process gas may have a temperature lower than the temperature of the substrate positioning unit 118 by the refrigerant. Therefore, the first process can be prevented 146728.doc • 35· 201038763 The gas and the first process gas are decomposed by heat before being ejected into the reaction space of the processing chamber 112. < When depositing a composite film containing two or more elements, two or more source materials having different decomposition temperatures from each other should be used. When the second gas distribution plate 138 in which the refrigerant is circulated is not used, the treatment gas having a relatively low decomposition temperature among the two or more treatment gases is attributed to the substrate positioning unit 118. The heat is decomposed inside the first gas distribution plate 134 and the second gas distribution plate 136 (that is, the internal spaces 160 and 162) due to heat. Therefore, the film deposition efficiency may be significantly lowered to cause particles. According to this exemplary embodiment, the third gas distribution plate 138 in which the refrigerant circulates is provided to cool the first space I60 and the second space 162 of the first gas distribution plate 134 and the second gas distribution plate 136 and the first nozzle 138b and the second nozzle 138c, thereby preventing the process gas from decomposing due to heat. However, in such a case, the decomposition efficiency may be lowered by cooling the process gas having a relative IBJ 7J solution/dish degree among the two or more process gases. The process gas is supplied to the reaction space of the processing chamber 112 and then heated within the reaction space in the case where the process gas has a relatively high decomposition temperature. However, there is a defect that the processing gas does not have sufficient decomposition efficiency by heating. Therefore, in order to solve this drawback, the supply amount of the process gas having a relatively high decomposition temperature should be increased. Since the treatment gas having a relatively high decomposition temperature is cooled to lower the decomposition efficiency', the supply of the treatment gas can be increased. Therefore, it is possible to increase the amount of unreacted residual source material to increase the processing cost. As described above, the processing gas having a relatively high score of 146728.doc -36 - 201038763 in the two or more processing gases may be ejected to the central region of the substrate positioning unit 117 via the second gas distributing portion 320 to solve The above mentioned defects. That is, in this exemplary embodiment, the first gas distribution portion 310 having a plate shape and corresponding to the substrate positioning unit 118 is separated into a plurality of first gas distribution portions 31A corresponding to the substrate 116, as shown in FIG. Show. Therefore, the first gas distribution portion 310 disposed above the central region of the substrate positioning unit 118 is removed. That is, the central region of the substrate 0 positioning unit 118 is opened toward the upper side (i.e., the chamber cover region). Disposing a second gas distribution in which a process gas having a relatively high decomposition temperature among two or more process gases is sprayed into an upper portion of a central portion of the substrate positioning unit 118 (ie, a central region of the chamber cover 13A) Part 32〇. The second gas delivery portion 32A includes a center ejection nozzle 321 which is disposed at a position of the chamber cover 13 corresponding to a central portion of the substrate positioning unit 118. The center nozzle 321 communicates with a second process gas storage portion in which the decomposition temperature is high. Therefore, the center injection nozzle 321 can supply the second processing gas having a relatively high decomposition temperature to the upper portion of the central portion of the substrate positioning unit 118. Here, the second processing body II supplied to the central portion of the substrate positioning unit 丨丨8 is directed from the material region of the chamber cover 13 toward the substrate to position the tiling. The second process gas is then moved toward the substrate 116 radially disposed about the central region of the substrate positioning unit 118. Therefore, the second process gas has a moving distance greater than the moving distance of the second process gas injected from the first gas distributing portion 31. That is, the second process gas injected into the central region of the substrate positioning unit US moves to the edge region of the substrate positioning unit (1) and is discharged. This is because the second process gas is discharged through the lower edge region of the substrate 146728.doc -37· 201038763. Here, since the moving distance (i.e., the path) of the processing gas is increased, the second processing gas ejected from the second gas distributing portion 32 can receive the heat of the substrate positioning unit 118 for a longer period of time. Therefore, the second process gas can be preheated by the temperature in the chamber to improve the decomposition efficiency. Further, since the individual cooling member is not disposed between the second gas distributing portion 320 and the substrate positioning unit 118, the second process gas to be ejected can be prevented from being cooled. In this exemplary embodiment, since the treatment gas having a relatively high decomposition temperature among two or more kinds of treatment gases is additionally supplied to the second gas distribution portion 320, the decomposition efficiency can be improved. Therefore, the supply of process gas having a relatively high decomposition temperature can be reduced by about 10% compared to the supply of the prior art. In the exemplary embodiment, the second process gas of the second gas storage portion 420 is supplied to the second intake pipe 136a of the second gas distribution plate 136 and the center injection nozzle 321 of the second gas delivery portion 32A. Here, a flow controller such as a mass flow controller (MFC) may be disposed at the second intake pipe 136a and the center injection nozzle 321 to change the flow rate (i.e., the supply amount) of the second process gas. Further, the flow controller may be disposed between the first intake pipe i36a of the first gas distribution plate 134 and the first gas storage portion 41A. The substrate processing apparatus of this exemplary embodiment is not limited to the above description. That is, the substrate processing apparatus can be varied differently. Hereinafter, a modified example of the substrate processing apparatus will be described. The modified examples described below can be applied to each other. Referring to Figure 13, a first gas distribution portion 31 can be fabricated in a body to cover all of the substrates 116 disposed on the substrate positioning unit 118. Therefore, the 146728.doc -38 - 201038763 - gas distribution portion 3 0 may have a ring shape. The second gas distribution portion 320 is disposed at a central portion of the ring. Since the first gas distribution portion mo has a ring shape ', the substrate positioning unit i 8 can be rotated. That is, even if the substrate positioning unit 118 is rotated, the processing gas can be continuously supplied onto the substrate 116. This is because the first gas distribution portion 310 is formed in a ring shape corresponding to the radius of rotation attributed to the rotation of the substrate positioning unit 118. Therefore, since the substrate positioning unit 118 is rotated, the uniformity of the film deposited on the substrate 116 can be improved. Here, as shown in Fig. 13, the first gas distribution portion 31A having a ring shape may include a plurality of blocks. When a plurality of large substrates are positioned, the diameter of the first gas distributing portion 3H) having a ring shape may increase. Therefore, it may be difficult to manufacture a gas distribution device using a single process. As shown in FIG. 13, a plurality of first gas distribution portions having approximately fan-shaped shapes (four blocks in FIG. U) may be provided to connect them to each other 'by manufacturing a gas-shaped distribution having a ring shape. Part 3H). Here, each of the (four) blocks can be operated independently. ^ ', as shown in FIG. 13, the supply gas of the 庠5 and the ancient building..., U 仏 to the first gas distribution portion 3 10 having the annular shape and the second gas distribution portion 32 () can be passed to each other Different tube supplies. Moreover, the tubes can be transported to different storage tanks from each other. • A detachable and lightweight breast dispensing device 114 can be fabricated, as shown in FIG. Here, Fig. 14A_诚v U王' is an exploded perspective view of a gas distribution device according to another exemplary embodiment, and Fig. 16 ' . ^ ^ is a coupled cross-sectional view of a gas dispensing device according to another exemplary embodiment. θ Referring to FIG. 14 to FIG. 16 , the gas distribution device 146728.doc -39- 201038763 根据4 according to this example embodiment includes the second gas distribution portion 32〇, the first gas distribution portion 3 A 1 knife and a 4 body delivery portion 330 are connected. The second gas distribution portion is disposed below the chamber cover 13 , ^ ^ ^ center 4 / knife. A plurality of first emulsion dispensing portions 31G contact the side surface of the second gas dispensing portion and are disposed on the lower side of the chamber cover 130. The third gas distribution portion 330 is disposed between the plurality of first gas distribution portions to supply the (iv) gas. That is, in the source material supply portion (10) according to this exemplary embodiment, the center ejection portion 320 is disposed at the central portion of the lower portion of the chamber cover 13b, and the plurality of source material ejection portions 3_ are connected to the chamber cover 13" The lower side is in contact with the center ejection portion 320, and the plurality of disturbing gas injection portions are coupled between the plurality of source material ejection portions 310. 14 and 15, the chamber cover 13A has a shape substantially equal to the shape of the inside of the chamber body Kg, for example, a disk shape having a predetermined thickness. A plurality of inflow holes 611, 612, and 613 that pass vertically through the chamber cover 130 are defined in the cavity to the cover 130. The plurality of inflow holes 6丨1, 6丨2, and 6丨3 are defined in regions corresponding to the first gas distribution portion 320, the plurality of first gas distribution portions 310, and the plurality of third gas distribution portions 33〇, respectively. . That is, a second inflow hole 612 is defined at a central portion corresponding to the second gas distribution portion 320. The first inflow hole 611 and the second inflow hole 612 are defined to correspond to the plurality of first gas distribution portions 3 1 0. At a portion, the third inflow hole 613 is defined at a portion corresponding to the plurality of third gas distribution portions 330. Here, a first inflow hole 611 and at least one second inflow hole 612 may be defined at a region corresponding to the first gas distribution portion 310. The number of the second inflow holes 612 may be changed according to the inflow rate of the first process gas and the second process gas, 146728.doc -40. 201038763. For example, three second inflow holes 612 may be defined in a first gas distribution portion 31 (). Further, one of the first inflow holes 611 and at least the second inflow holes 612 defined in the region corresponding to the first gas distributing portion 31A may be arranged at equal intervals according to the configuration of the first gas distributing portion 310. That is, a first inflow hole 611 may be defined at a central portion of the region corresponding to the first gas distribution portion 31, and at least one may be defined at equal intervals with respect to the first inflow hole 611 and the first inflow hole 612 ( For example, three) second inflow holes 612. The first inflow hole 611 is connected to the first gas supply pipe 412 that supplies the first process gas, the first inflow hole 612 is connected to the second gas supply pipe 422 that supplies the second process gas, and the third inflow hole 613 is connected to the supply port The gas is disturbed by the gas supply pipe 432. Therefore, the second gas distribution portion 321 and the first gas distribution portion 310 are received from the first gas supply pipe 412 and the second gas supply pipe 422 via the first inflow hole 611 and the second inflow hole 6 12 and stored in the first gas storage portion. The first process gas and the first process gas in the 410 and second gas storage portions 420. Further, the third gas distribution portion 330 receives the disturbance gas from the perturbation gas supply pipe 432 via the third inflow hole 613. The first gas supply pipe 412 and the second gas supply pipe 422 are disposed toward a central portion of the chamber cover 13b, branch from a central portion of the chamber cover 130, and are connected to the first inflow hole 611 and the second inflow hole 612. Further, the first gas supply pipe 4丄2 and the second gas supply pipe 422 may be branched from the outside of the chamber cover 130 and connected to the first inflow hole 611 and the second inflow hole 612. Here, a relatively small amount of the first process gas is introduced to perform the deposition process as compared to the amount of the second process gas. The second gas distribution portion 320 is disposed at a central portion of the chamber cover 130 and has a substantially cylindrical shape. The second gas distribution portion 320 can be integrated with the chamber cover 146728.doc -41 - 201038763 m. Alternatively, the second gas matching portions 32 and m are separately fabricated to face the gas distribution portion to the chamber cover 13A at a portion of the lower portion of the chamber cover 13G. A second gas injection hole of the second inflow hole 612 of the chamber > cover 130 is bounded on the upper side of the second gas distribution portion 32g. Further, at least one injection hole is defined at a lower side of the second gas distribution portion 320. Therefore, the second gas distributing portion 32 accommodates the second process gas to inject the second process gas toward the lower side thereof. Here, the second gas delivery portion 320 injects a second process gas toward a central portion of the substrate positioning unit 118. That is, the second gas distribution portion 320 injects the second process gas into each of the plurality of first gas distribution portions 31 of the central space defined by the plurality of substrates ii6 on the substrate positioning unit 118. The cousin two gas distribution portion 32 is fixed to the lower side of the chamber cover (10). It is possible to provide two less than two: or two or more first gas distribution portions when the two breast dispensing portions 3 are provided. The mothers of the two first gas distribution portions 31 have a semicircular shape. When three or more first body dispensing portions 31A are provided, each of the second gas distributing portions 3 has a fan shape, wherein the inner surface of the connecting portion 320 has X, and the width thereof faces The outside gradually widens. Also, when the complex $ to the chamber cover ". At this time, the first gas distribution portion 31G of the first gas is separated from the adjacent first body: her side by a predetermined distance. Further, the protrusions - can be longitudinally 2: on both sides of the first body distribution portion 31G. Since the projections 314 are provided, the two C-body dispensing portions 33 can be lightly connected to the first gas distribution portion between 146728.doc - 42 · 201038763. A first source material injection hole 614 and at least one second source material injection hole 615 are defined at an upper side of the first gas distribution portion 310. A first source material injection hole 614 and at least one second source material injection hole 615 correspond to the first inflow hole 611 and the second inflow hole 612 of the cavity 130. Further, as described in the above exemplary embodiment and illustrated in the drawings, the first gas distribution portion 31 includes the first gas distribution plate 134, the second gas distribution plate 136, and the second gas distribution plate 138 stacked on each other. . The first gas distribution plate 134, the second gas distribution raft 136, and the third gas distribution plate 138 are separately fabricated and then stacked and coupled to each other. That is, the first gas distribution plate 134, the second gas distribution plate 136, and the third gas distribution plate 138 may be integrated into one body. Here, since the first gas distribution plate 134, the second gas distribution plate 36, and the third gas distribution plate 138 have the same structure and function as those described with reference to the drawings, the structure and function thereof will be omitted. The second gas distribution portion 330 has a strip shape having a predetermined width and thickness and a predetermined space therein. The groove 332 is longitudinally defined in the two sides of the third gas distribution plate 33. The protrusions 3 14 of the first gas distribution portion 31 are inserted into the grooves 332 defined in the two side faces of the third gas distribution plate 330. Therefore, the third gas distribution portion 33 is inserted and coupled between the gas distribution portions 310 of the two adjacent sides. The agitating gas injection hole 616 is defined in the upper side of the third gas distributing portion 33A to inject the agitating gas through the third inflow hole 613 of the chamber cover and inject the agitating gas to the outside of the substrate positioning unit U8. In order to eject the disturbing gas to the outside of the substrate positioning unit 118, 'may be in an outer portion facing the bottom surface of the top surface in which the agitating gas injection hole 616 is defined or in a face corresponding to the second gas distributing portion 320 146728.doc -43 - 201038763 An injection hole defining the agitating gas injection portion is defined in the outer surface of the inner surface. That is, when the injection hole is defined in the bottom surface, the injection hole may be defined in the bottom surface and the bottom surface disposed on the boundary of the outer surface. Further, the thermometer 333 may be disposed on at least one of the gas distribution portions 330 (e.g., at least two second gas distribution portions 340 facing each other) to measure the temperature in the processing chamber 丨丨2. The temperature meter 333 can be disposed on the bottom surface of the third gas delivery portion 33. Further, a portion of the third gas distributing portion 330 may be recessed, and the thermometer 333 may be buried into the recessed portion. In the gas distribution device 114 according to this exemplary embodiment, although four first gas distribution portions 310 and four third gas distribution portions disposed between the four first gas distribution portions 3 10 are illustrated as an example However, the number of the first gas distribution portions 3 10 may vary depending on the internal size of the processing chamber 12 and the number of the substrates 116. Moreover, since the plurality of first gas distribution portions are separable and coupleable, the large gas distribution device 114 conforming to the tendency of the large processing chamber 112 can be more easily manufactured. As shown in the figure, the second gas distribution portion 32 includes a center nozzle 321, an extension nozzle 324, and an extension path 323. The center spray nozzle 32i is disposed in a central region of the plurality of gas distribution portions 310. The extension spray nozzle extends into the space between the first gas distribution portions 310. The extension path is in communication with the center nozzle 321 and the extension nozzle 324 to receive the second process gas. The _ 2 body dispensing portion 310 of this exemplary embodiment is disposed corresponding to the substrate 116, respectively. Therefore, the second process gas can be injected into the space between the first body distribution portions 3 10 to supply the second process gas into the space between the plates 116. Therefore, the uncooled soil-processing gas 146728.doc • 44· 201038763 can be supplied to the substrate 116. As a result, the decomposition efficiency of the second process gas can be improved to increase the film deposition efficiency. As shown in Fig. 18, the external heating unit 340 for heating the second process gas supplied to the second gas distribution portion 320 may be further disposed outside the first gas distribution portion 320. The electric heating device and the optical heating device can be used as the external heating unit 340. Therefore, the second process gas can be heated to further improve the decomposition efficiency. Q As shown in Fig. 19, the second gas distribution portion 320 may include a plurality of medium-to-injection nozzles 321. Therefore, the second process gas can be efficiently supplied to the central region of the substrate positioning unit 118. Further, the second gas distributing portion 32A may further include a path changing device 35, which ejects the second processing gas supplied from the second gas distributing portion 32A toward the substrate 116. The path changing device 350 includes: a fixing plate 351; an extending path 352 extending from the central portion of the fixing plate 351 toward the substrate positioning unit η; and a path changing nozzle 353 disposed at the end 延伸 of the extending path 352. Here, the fixed plate 351 collects the second process gas injected through the second gas distributing portion 32A. In Fig. 19, one of the fixing plates 35 is connected and fixed to the first gas distributing portion 31A. However, the invention is not limited thereto. For example, the fixing plate 351 can be connected and fixed to the chamber cover 13A. The extension path 352 has a rod shape 'with its end closed. Therefore, the second process gas supplied into the extension path 352 is ejected toward the substrate 116 via the path change nozzle 353 disposed around the end of the extension path 352. That is, the second process gas supplied from the second gas distributing portion 32 is injected in a substantially vertical direction with respect to the substrate 116. Therefore, once the second process gas hits the substrate 146728.doc -45 - 201038763, the clamping unit 11 8 is spread out on all sides (ie, toward the substrate). Narrowly, in this exemplary embodiment, the release of the second process gas supply extension path 352 below the surface resistance extension path kisses. This is because the soil port can eject the first process gas in a direction parallel to the substrate (1) via the nozzle 353 disposed in the extension path. The ejection amount of the second processing gas which is emitted toward the upper space of the plurality of substrates 116 can be uniformly adjusted by A ^5 1 1 6 ^ μ itrt ^ . As shown in Fig. 20, the inner space of the inner chamber mountain can be further disposed in the lower region of the treated first milk dispensing portion 320 to heat the second processing gas supplied from the second gas distributing portion 32. . Also, the P internal heating unit 360 may be disposed in a space between the second gas distributing portion 320 and the path changing device 350. Here, the electric heating device and the optical heating element can be used as the internal heating unit 36A. Therefore, since the twisting is injected into the second process gas inside the processing chamber ι 2 via the two gas distributing portion 32, the decomposition efficiency of the processing gas can be further improved. The corpse, as shown in Figure 21, can be provided in a second gas distribution at the processing chamber 112. (The individual electricity generating device 37 that generates electricity in the region below 5 minutes 32. The plasma generating device 370 includes an antenna 371 disposed in a space between the second gas distributing portion 320 and the path changing device 350. And a source supply portion 372 that supplies the plasma power to the antenna 371. The second process gas supplied from the second gas distribution portion 32A can be ionized by the plasma because the second process gas is ionized, thereby improving Thin film deposition efficiency. Capacitively coupled plasma (CCP) method can be used instead of the inductively coupled 4 plasma (ICP) method described above. For this purpose, the 'separate electrode can be placed in the second gas 146728.doc -46- 201038763 distribution part 320 In the lower region, a remote electropolymerization method can be applied. Therefore, a device for changing the second process gas supplied to the (4)th (4) to the plasma can be further provided. 'The first process gas having a low decomposition temperature may be injected into the inner space of the processing chamber 112 via the first gas distribution portion 310, and the second process gas having a high decomposition temperature may be passed through the second gas The delivery portion 32G is ejected into the internal space of the processing chamber 112. That is, the treated milk can be separately sprayed into the separated space to deposit a film. Therefore, the first processing gas having a low decomposition temperature can be prevented from being A process gas is decomposed before being injected into the inner space of the processing chamber 112. Further, the second process gas having a high decomposition temperature is prevented from being ejected to the processing chamber 1 1 2 in a state where the second process gas is in a cooling state W Also, although not shown, the first gas distribution portion 310 can be integrated with the chamber cover. That is, the first gas distribution portion 310 can be disposed inside the chamber cover 130. In the above description, 'mainly A semi-batch type device for processing a plurality of substrates is described. However, the present invention is not limited thereto. For example, the present invention is applicable to a device for processing a single substrate. In this case, a second device can be disposed. The processing gas is ejected to the second gas distribution portion in the peripheral region of the substrate." No, in FIG. 23, the upwardly protruding protrusions 380 may be disposed in the central region of the substrate positioning early warning 118. Here, the second gas distribution portion 320 may have a thickness smaller than the thickness of the first gas distribution portion 310. In this case, when the substrate positioning unit 118 is ± liter, the protrusion may be partially inserted into the first gas distribution portion 310. The second gas distribution portion 320 is between the lower side 146728.doc -47 - 201038763. Thus the 'second gas distribution portion 320 ejects the second process gas toward the protrusion 380, and the flow of the first process gas is changed by the protrusion 380 Flowing toward a certain plate 116. Using the substrate processing apparatus of this exemplary embodiment, a compound containing two or more elements (GaN, Ga/IN/A1N, TiN, and Ti/A1N) is simultaneously deposited on a plurality of substrates. . According to the thin film deposition process, the supply amount of the second processing gas supplied to the second gas distributing portion 320 may vary. For example, the supply of the second process gas may be completely interrupted by the second gas delivery portion 32〇70. This means that the processing gas can be supplied using only at least one of the first gas distributing portion 31 and the second gas distributing portion 320. The first gas distribution portion 3A and the second gas distribution portion 32A according to the exemplary embodiment may be coupled and fixed to the chamber cover 130, except that the first gas distribution portions 310 are separated or coupled to each other. The substrate processing apparatus including the gas delivery device according to the exemplary embodiment has the following effects. The three gas distribution plates in which the two process gases are independently sprayed in the same manner define a space for the flow of the refrigerant in the plate by the gas distribution including the nozzle for spraying the process gas onto the substrate, and thus The particles are prevented from being generated by the decomposition of the process gas and the gas distribution device is prevented from being thermally deformed. Two gas distribution plates are fabricated using a drill or sheet metal forming process. Further, since the gas distribution plate having only the core nozzle is manufactured by a brazing process, the intervening structure can be realized and the manufacturing cost can be reduced. The thermometer is disposed on the gas distribution plate including the nozzle during the brazing or substrate processing process, such as the temperature of the wind distribution plate, when the temperature of the wind distribution plate increases exceeds 146728.doc 48-201038763, the predetermined temperature is stopped by the signal or the substrate is stopped. Process the process. Therefore, since the processing is automatically stopped by the signal or the substrate processing process, defects occurring during the manufacturing process or the substrate processing process can be prevented. Further, since the processing gas having a high decomposition temperature is ejected into the space of the substrate, the traveling time of the processing gas is therefore larger than the traveling time of the processing gas in the case where the processing gas is directly ejected onto the substrate. Therefore, the processing gas can be preheated for a long time in the processing chamber to increase the decomposition of the processing gas having a high decomposition temperature, thereby reducing the use of the processing gas and improving the film deposition efficiency. Further, since the processing gas having a high decomposition temperature among the plurality of processing gases is injected via the peripheral region of the ejection device (unless the ejection device has a cooling function), it is possible to eject the processing gas having a high decomposition temperature without cooling the processing gas. Into the processing chamber (i.e., the substrate, due to the chamber cover region above the central portion of the substrate positioning unit on which the plurality of substrates are positioned (i.e., where the temperature is relatively high in the gas jet ❹ (4)) The medium is sprayed with a treatment gas having a high decomposition temperature', so that the use of the process gas can be reduced due to the preheating of the process gas and the film deposition efficiency can be improved. Further, the 'single path change device can be disposed in which the spray has a high decomposition temperature. Processing the gas in a region in which the processing gas is sprayed toward the substrate. Therefore, the amount of the processing gas supplied to the substrate may be uniform. Further, a plurality of second gas g-sending portions of the gas distributing device may be separated, and the plurality of The second gas distribution portions can be consumed and separated from each other. Therefore, the system can be more easily produced. Large gas 146728.doc -49 - 201038763 dispensing device conforming to the trend of the large processing chamber 112. Although the gas distributing device and the substrate processing device having the gas distributing device have been described with reference to the specific embodiments, it is not limited thereto. It will be readily understood by those skilled in the art that various modifications and changes can be made without departing from the spirit and scope of the invention as defined by the appended claims. FIG. FIG. 2 and FIG. 3 are respectively a detailed cross-sectional view and an exploded perspective view illustrating a substrate processing agricultural gas distribution apparatus according to an exemplary embodiment; FIGS. 4A to 4C are diagrams illustrating manufacturing according to an exemplary FIG. 5 is a plan view of a second gas distribution plate according to an exemplary embodiment; FIG. 6 is an exploded perspective view of a gas distribution device according to another exemplary embodiment; 7A through 7C are cross-sectional views illustrating a process of a third gas distribution plate according to another exemplary embodiment; FIG. 9 is a plan view of a substrate positioning unit according to another exemplary embodiment; FIGS. 10 and 11 are respectively a cross-sectional view and a plan view of a substrate disposal according to another exemplary embodiment. FIG. 12 is a cross-sectional view showing a substrate processing apparatus according to another exemplary embodiment, and a substrate processing apparatus according to another exemplary embodiment. FIG. 13 is a view illustrating a substrate processing apparatus according to another exemplary embodiment. FIG. 14 to FIG. 16 are a plan view, an exploded perspective view, and a coupled cross-sectional view of a gas distribution device according to another exemplary honey J Dingzhuang λ; FIG. 17 is a diagram showing another exemplary implementation according to another exemplary embodiment. a plan view of a gas distribution device; and

18 to 23 are cross-sectional views of a substrate processing apparatus according to an exemplary embodiment. [Main component symbol description] Ο 110 substrate processing device 112 processing chamber 114 gas distribution device 116 substrate 118 substrate positioning unit 120 substrate inlet 122 discharge hole 124 radio frequency (RF) power supply 126 matcher 128 chamber body 130 chamber cover 131 Drive unit 132 support 134 first gas distribution plate 146728.doc 201038763 134a first intake pipe 134b first outer casing 134c baffle 134d first through hole 136 second gas distribution plate 136a second intake pipe 136b second outer casing 136c Buffer space 136d second through hole 136e third through hole 138 third gas distribution plate 138a third outer casing 138b first nozzle 138c second nozzle 140 partition 142 air supply hole 144 first thermocouple 146 passage 148 concave portion 149 plate 150 Air supply port 152 refrigerant flow pipe 152a refrigerant supply pipe 152b refrigerant discharge pipe 146728.doc -52- 201038763 160 first space 162 second space 164 third space 166 column 170 first plate 172 second plate 174 first opening 176 Ο second opening 178 needle tube 180 paste 182 side plate 190a first side wall 190b first lower plate 192a second side wall 192b second lower plate 194a third side wall 194b third lower plate 200 first sub gas distribution plate - 204 first sub intake pipe 206 second sub gas distribution plate 208 third Sub gas distribution plate 210 pedestal 212 disk 220 plate 146728.doc -53- 201038763 222 plate 230 stepped portion 232 accommodating space 300 source material supply portion 310 first gas distribution portion 314 protrusion 320 second gas distribution portion 321 center injection Mouth 322 second gas injection hole 323 extension path 324 extension nozzle 330 third gas distribution portion 332 groove 333 thermometer 340 external heating unit 350 path changing device 351 fixing plate 352 extension path 353 path changing nozzle 360 internal heating unit 370 Slurry generating device 371 Antenna 372 Power supply portion 380 Projection 146728.doc -54- 201038763 400 Process gas storage portion 410 First process gas storage portion 412 First gas supply pipe 420 Second process gas storage portion 422 Second gas supply pipe 432 Stirring gas supply pipe 500 refrigerant storage The first portion 611 flows into the second inflow hole 613 hole 612 third inflow holes 614 Di - source material injection hole 615 brother-material injection hole 616 second source gas injection holes disturb square 146728.doc -55-

Claims (1)

201038763 VII. Patent application scope: !· A gas distribution device comprising: - a first gas distribution portion 'configured to inject at least two source materials onto a substrate via different routes from each other; and - a second gas a dispensing portion configured to inject a source material having a decomposition temperature greater than an average of one of the decomposition temperatures of the at least two source materials onto the substrate, wherein the first gas distribution portion is separated into At least two sections and disposed such that the second gas distribution portion is positioned between the at least two sections; and the at least two sections are coupleable and separable from each other. The gas distribution device of claim 1, wherein the first gas distribution portion comprises: a first gas distribution plate coupled to a first intake pipe configured to introduce a first process gas, the first gas The distribution plate includes a plurality of first through holes for passing the first process gas; a second gas distribution plate 'connected to the second intake pipe configured to introduce a second process gas to the second gas The distribution plate includes a plurality of second through holes aligned with the plurality of first through holes for passing the first process gas and a plurality of third through holes for passing the second process gas; and a third gas distribution a plate comprising: a plurality of first nozzles aligned with the plurality of second through holes and the plurality of third through holes and configured to respectively inject the first process gas and the second process gas a second nozzle; and a space for the flow of the refrigerant. 3. The gas dispensing device of claim 2, wherein the first gas distribution plate package 146728.doc 201038763 comprises: an outer casing comprising the first process gas configured to receive the supply of the first process gas from the first intake pipe a space; and a dispensing unit disposed within the space, the dispensing unit configured to uniformly dispense the first process gas introduced from the first intake pipe. 4. The gas dispensing device of claim 3, wherein the dispensing unit comprises a plate and a plurality of air supply holes defined by perforating the plate. 5. The gas dispensing device of claim 2, wherein the second gas distribution plate comprises: a housing coupled to the second intake tube, the housing providing a space configured to receive the second processing gas; a plurality of cylinders including the plurality of second through holes in the space; and a plurality of third through holes defined by perforating a lower portion of the outer casing. 6. The gas distribution device of claim 5, wherein the second gas distribution plate comprises: a partition disposed in the space; and a buffer space separated by a side wall of the outer casing and the partition The buffer space is configured to receive the second process gas supplied from the second intake pipe. 7. The gas dispensing device of claim 6, wherein the second gas distribution plate comprises one of the gas supply holes in the separator to supply the second process gas of the buffer space to the space. 146728.doc 201038763 8 · A gas distribution device according to item 2 of May 2, wherein the third gas distribution plate comprises: a casing Ί locating the plurality of first nozzles and the plurality of second nozzles And including a space for the refrigerant to flow; and a cooling unit connected to the outer casing to supply or discharge the refrigerant. 9. The gas dispensing device of claim 8, wherein the outer casing comprises: a side wall that surrounds the side surface of the weir; an upper plate disposed above the wall to intersect the plurality of first nozzles and The plurality of second nozzles and the lower plate are disposed below the side wall to communicate with the plurality of first nozzles and the plurality of second nozzles. 1〇·如. The gas distribution device of claim 8, wherein the outer casing comprises: - a side surface surrounding one side surface of the s-sea space; and a lower plate, wherein the plurality of first nozzles directly contacting the second gas distribution plate are disposed And the plurality of second nozzles. The gas distribution device of claim 1, further comprising a thermometer disposed on at least one of the second gas distribution plate and the third gas distribution plate. 3. The gas distribution device of claim 1, wherein the second gas distribution portion is disposed at a central portion of a lower side of the chamber cover, and the at least two gas distribution portions are disposed under the chamber cover such that The second gas distribution portion is positioned between the at least two first gas distribution portions. The gas distribution device of claim 1 wherein at least one of the at least two first gas 146728.doc 201038763 distribution plates are spaced apart from one another. 14_ The gas distribution device of claim 1 or 13, further comprising at least one third gas distribution portion disposed between the at least two first gas distribution portions to inject one Agitate the gas. 15. The gas dispensing device of claim 14, wherein the third gas dispensing portion injects the agitating gas toward an outside of one of the substrates. 16. The gas distribution device of claim 15, wherein protrusions are formed at both side surfaces of the at least two gas distribution portions, and grooves corresponding to the protrusions are formed on both side surfaces of the third gas distribution portion The projections are inserted into the grooves whereby the third gas distribution portion is between the first gas distribution portions. 17- The gas distribution device of claim 14, wherein a temperature detector is disposed at least below a third gas distribution portion. a substrate processing apparatus comprising: two to a reaction space; a substrate clamping unit disposed in the reaction space of the chamber to radially position a plurality of substrates at a center thereof; a first body assembly, comprising: a first gas distribution portion configured to inject at least a source (four) onto the substrate via different routes from each other, and - a second gas distribution a portion, the = milk dispensing portion is configured to inject a source material having a decomposition temperature greater than the average value of the I:: degrees of the at least two source materials to wherein the first gas distribution portion is separated into at least Two sections, and 146728.doc 201038763 the first gas-distributing portions of the partitions are positioned such that the second gas distribution portion is positioned between the first gas distribution portions of the partitions: and the special knife is separated A gas distribution portion is lightly connectable and separable from each other. 19 20. Ο 21. 22. The gas distribution device body of claim 18, wherein the reaction space is provided to seal the reaction space, and the first dispensing portion is secured to the chamber cover. Wherein the chamber comprises: a chamber, and a chamber cover configured with a gas distribution portion and the second gas such as the gas delivery device of claim 18, wherein a refractory path is disposed in the chamber In the cover, the refrigerant is circulated in the refrigerant path. The gas distribution portion is the gas distribution device of claim 18, wherein the first comprises: a first gas distribution plate coupled to the first-intake tube configured to introduce a first process gas, the first gas The dispensing plate includes a plurality of: a first through hole for passing the first process gas; a second gas distribution plate coupled to the second intake pipe configured to introduce a first strict wind body, the second gas The distribution plate includes a plurality of second through holes aligned with the plurality of first through holes for passing the first processing gas and a plurality of third through holes for passing the second processing gas; and a third gas distribution a plate comprising: a plurality of first nozzles aligned with the plurality of second through holes and the plurality of third through holes and configured to respectively inject the first process gas and the second process gas $ two nozzles, and one space for the flow of consistent refrigerant. The gas distribution device of claim 18, wherein the second gas distribution comprises at least a central injection nozzle 'the at least one central injection nozzle: 146728.doc 201038763 in a central region corresponding to the substrate positioning unit . 24. The gas distribution device of claim 18, wherein the second gas delivery comprises: '° h a central injection nozzle disposed in the central region of the first gas distribution portion An extension injection nozzle extending into a space between the first gas distribution and the extension path, and an extension path communicating with the center injection nozzle and the extension injection nozzle. The gas dispensing device of claim 18, further comprising: a path changing device disposed in the lower region of the second gas dispensing portion for processing the supply of the substrate from the second gas dispensing portion gas. /, the gas distribution device of β, wherein the path changing device comprises: a 匕 固定 fixed plate, a portion of which is connected to each of the plurality of first gas distribution portions, wherein the fixing plate is disposed a center of one of the plurality of first gas distribution portions; an extension path extending from a central region of the fixed plate toward the substrate positioning unit; and a roadside change nozzle disposed at an end region of the extension path . The gas distribution device of claim 18, further comprising: a heating unit I46728.doc -6 - 201038763, the heating unit configured to heat a treatment gas from the second gas distribution portion; or A plasma generating device configured to ionize the process gas injected from the second gas distribution portion using a plasma. 27. The gas dispensing device of claim 18, further comprising a protrusion disposed on the substrate positioning unit, the protrusion being inserted into a lower side of the second dispensing portion between the first gas dispensing portions in. 146728.doc