KR20100099535A - Appratus for treating substrate and method for fabricating the same - Google Patents

Abstract

PURPOSE: A substrate processing apparatus and a method for manufacturing the same are provided to prevent the generation of foreign materials due to the decomposition of a process gas by installing a refrigerant flowing space in a gas distribution plate. CONSTITUTION: A first process gas flows through a first gas distribution plate(134). The first gas distribution plate includes a first gas introduction pipe(134a) through which the first process gas is introduced. The first process gas and a second process gas passes through a second gas distribution plate(136). The firs gas distribution plate includes a second gas introduction pipe(136a) through which the second process gas is introduced. A third gas distribution plate sprays the first and the second process gases toward a substrate loading stand.

Description

Substrate processing apparatus and its manufacturing method {Appratus for Treating Substrate and Method for Fabricating the same}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus including a gas distribution means.

In general, in order to manufacture a semiconductor device, a display device, and a thin film solar cell, a thin film deposition process of depositing a thin film of a specific material on a substrate, a photo process of exposing or hiding selected areas of the thin films using a photosensitive material, The thin film is removed and patterned through an etching process. Among these processes, a thin film deposition process and an etching process are performed in a substrate processing apparatus optimized in a vacuum state.

In a substrate processing apparatus, a gas distribution plate is used to distribute a uniform process gas inside a process chamber having a reaction space. In general, chemical vapor deposition (CVD) is used as a main method for depositing a thin film on a substrate. In the case of using the CVD method, the temperature of the gas distribution plate rises, and thus, powder or particles may be generated as the process gas is decomposed and reacted between the lead and the gas distribution plate of the process chamber. Therefore, in order to suppress the generation of powder or foreign matter, a cooling device for cooling the gas distribution plate is provided. However, the installation of the cooling device causes the cost of the substrate processing device to increase.

In addition, in the prior art, in order to form two injection holes for simultaneously injecting two kinds of process gases independently, and to secure a space in which the refrigerant flows to cool the gas distribution plate heated according to the process temperature, generally three Gas distribution means composed of the above gas distribution plates shall be manufactured. Such gas distribution means are manufactured by arranging a plurality of fin-type tubes appropriately and joining by several brazings. However, as the area of the gas distribution means also increases, the number of tubes increases, so that the probability of failing in bonding to the brazing increases. In addition, thermal deformation may occur due to repeated brazing, and stress may be inherent in the brazing site, thereby causing leakage.

In order to solve the problems of the prior art as described above, the present invention is manufactured by the combination of the first gas distribution plate and the plurality of tubes formed with a plurality of through-holes made by excavation or plate processing and a plurality of through-holes and An object of the present invention is to provide a substrate processing apparatus including gas distribution means capable of stably injecting two or more kinds of gases stably by a second gas distribution plate provided with a plurality of communicating nozzles.

Another object of the present invention is to provide a substrate processing apparatus including gas distribution means in which a temperature measuring means is provided on a gas distribution plate having a plurality of injection nozzles in order to adjust the temperature of the refrigerant to an appropriate temperature.

An object of the present invention is to provide a substrate processing apparatus including gas distribution means that is easy to manufacture by configuring each of the first to third gas distribution plates with a plurality of first to third sub gas distribution plates. .

Gas distribution means of the substrate processing apparatus according to the present invention for achieving the above object is connected to a first gas introduction pipe for introducing a first process gas, a plurality of first passages for passing the first process gas A first gas distribution plate including a hole; A plurality of second passage holes that are connected to a second gas introduction pipe for introducing a second process gas and aligned with the plurality of first passage holes to allow the first process gas to pass through and the second process gas to pass through the second process gas; A second gas distribution plate comprising a third through hole of the second gas distribution plate; And a third gas distribution plate aligned with the plurality of second and third passage holes and including a plurality of first and second nozzles for injecting the first and second process gases, respectively, and a space in which a refrigerant flows. Characterized in that.

In the gas distribution means of the substrate processing apparatus as described above, the first gas distribution plate includes a housing including a space for accommodating the first process gas supplied from the first gas introduction pipe, and inside the space. And distribution means for uniformly distributing the first process gas installed and introduced from the first gas introduction pipe.

In the gas distribution means of the substrate processing apparatus as described above, the first gas distribution plate includes a housing including a space for accommodating the first process gas supplied from the first gas introduction pipe, and inside the space. And a plurality of first sub gas distribution plates having distribution means for uniformly distributing the first process gas introduced from the first gas introduction pipe.

In the gas distribution means of the substrate processing apparatus as described above, the inner wall of the housing includes a stepped portion, and the distribution means is located in the stepped portion.

In the gas distribution means of the substrate processing apparatus as described above, the first sub gas distribution plate is in the shape of a fan, characterized in that the arc processing at the end portion adjacent to the central portion of the first gas distribution plate.

In the gas distribution means of the substrate processing apparatus as described above, the distribution means comprises a plate and a plurality of supply holes for puncturing the plate.

In the gas distribution means of the substrate processing apparatus as described above, the second gas distribution plate is a buffer space for receiving the second process gas supplied from the second gas introduction pipe and the second process gas supplied from the buffer space. And a second housing having a second space for accommodating the sidewall, wherein the side wall of the housing of the first gas distribution plate has a thickness covering the buffer space of the second housing.

In the gas distribution means of the substrate processing apparatus as described above, the second gas distribution plate, the housing is connected to the second gas introduction pipe and provides a space for receiving the second process gas; A plurality of pillars in which the plurality of second passage holes are embedded in the space; And a plurality of third through holes formed through the lower portion of the housing.

In the gas distribution means of the substrate processing apparatus as described above, the second gas distribution plate, the partition wall is provided in the interior of the space; And a buffer space divided by the side wall of the housing and the partition wall and accommodating the second process gas supplied from the second gas introduction pipe.

In the gas distribution means of the substrate processing apparatus as described above, the second gas distribution plate, characterized in that it comprises a supply hole provided in the partition wall for supplying the second process gas of the buffer space to the space. .

In the gas distribution means of the substrate processing apparatus as described above, the second gas distribution plate, the housing is connected to the second gas introduction pipe and provides a space for receiving the second process gas; A plurality of pillars in which the plurality of second passage holes are embedded in the space; And a plurality of second sub gas distribution plates having a plurality of third through holes formed in the lower part of the housing.

In the gas distribution means of the substrate processing apparatus as described above, the third gas distribution plate is connected to the housing and the housing including the space in which the plurality of first and second nozzles are installed and the refrigerant flows. It characterized in that it comprises a refrigerant flow pipe for supplying or discharging the refrigerant.

In the gas distribution means of the substrate processing apparatus as described above, the housing is located on the side wall surrounding the side of the space, the upper side of the side wall, the upper plate in communication with the plurality of first and second nozzles, and the lower side of the side wall Located in, characterized in that it comprises a lower plate in communication with the plurality of first and second nozzles.

In the gas distribution means of the substrate processing apparatus as described above, the housing includes a side wall surrounding the side of the space and a lower plate on which the plurality of first and second nozzles in direct contact with the second gas distribution plate are located. It is characterized by.

In the gas distribution means of the substrate processing apparatus as described above, the third gas distribution plate is connected to the housing and the housing including the space in which the plurality of first and second nozzles are installed and the refrigerant flows. And a third sub gas distribution plate having a refrigerant flow tube for supplying or discharging the refrigerant.

In the gas distribution means of the substrate treating apparatus as described above, the first gas distribution plate and the second gas distribution plate are made of aluminum, and the third gas distribution plate is made of stainless steel or aluminum.

In the gas distribution means of the substrate processing apparatus as described above, a temperature measuring means is provided on the third gas distribution plate.

In the gas distribution means of the substrate processing apparatus as described above, first and second temperature measuring means are provided on the second gas distribution plate and the third gas distribution plate, respectively.

Substrate processing apparatus for achieving the above object, the process chamber for providing a reaction space; A first gas distribution plate and a second process gas installed in the reaction space and connected to a first gas introduction pipe for introducing a first process gas and including a plurality of first passage holes through which the first process gas passes; A plurality of second passage holes connected to a second gas introduction pipe for introducing a plurality of second passage holes to pass through the first process gas and aligned with the plurality of first passage holes to pass the second process gas; A second gas distribution plate including a hole, and a plurality of first and second nozzles which are aligned with the plurality of second and third passage holes to inject the first and second process gases, respectively, and a space in which the refrigerant flows. Gas distribution means comprising a third gas distribution plate comprising a; And substrate mounting means facing the gas distribution means, the substrate placing means being disposed thereon.

In the substrate processing apparatus as described above, the process chamber is composed of a chamber body and a chamber lead, characterized in that the first gas distribution plate is coupled to the chamber lead.

In the substrate processing apparatus as described above, the chamber lead includes a recess formed in a portion corresponding to the first gas distribution plate and connected to the first gas introduction pipe, and the first gas distribution plate is the first gas distribution plate. And a space for accommodating the process gas, and a baffle for uniformly distributing the first process gas between the recess and the space.

In the substrate processing apparatus as described above, the chamber lead is characterized in that the refrigerant passage through which the refrigerant is circulated.

In the substrate processing apparatus as described above, the first gas distribution plate is installed spaced apart from the chamber lead.

A method of manufacturing the gas distribution means of the substrate processing apparatus for achieving the above object is connected to the first gas introduction pipe for introducing a first process gas, a plurality of first through holes for passing the first process gas Forming a first gas distribution plate comprising a; A plurality of second passage holes that are connected to a second gas introduction pipe for introducing a second process gas and aligned with the plurality of first passage holes to allow the first process gas to pass through and the second process gas to pass through the second process gas; Forming a second gas distribution plate including a third through hole of the second gas distribution plate; Forming a third gas distribution plate including a plurality of first and second nozzles which are aligned with the plurality of second and third through holes, respectively, and a space in which a refrigerant flows, and a plurality of first and second nozzles respectively injecting the first and second process gases; step; And coupling the second gas distribution plate to the first gas distribution plate and the third gas distribution plate to the second gas distribution plate.

In the method of manufacturing a gas distribution means of the substrate processing apparatus as described above, the third gas distribution plate, comprising the steps of preparing a first plate and a second plate; Drilling a plurality of openings corresponding to the plurality of first and second nozzles in the first plate and the second plate; Arranging a plurality of tubes between the first plate and the second plate to correspond to the plurality of openings; Bonding the first plate and the second plate to the plurality of tubes using a brazing method; Coupling a peripheral portion of the first plate and the second plate with a third plate to form a housing; And connecting a refrigerant flow tube for supplying and discharging the refrigerant to the side wall of the housing.

In the method of manufacturing a gas distribution means of the substrate processing apparatus as described above, the third gas distribution plate, the step of preparing a plate; Drilling a plurality of openings corresponding to the plurality of first and second nozzles in the plate; Arranging a plurality of tubes to correspond with the plurality of openings of the plate; Joining the plate with the plurality of tubes using a brazing method; Coupling a peripheral portion of the plate with a third plate to form a housing; Connecting upper portions of the plurality of first and second nozzles to contact lower portions of the second gas distribution plate; And connecting a refrigerant flow tube for supplying and discharging the refrigerant to the side wall of the housing.

Substrate processing apparatus including a gas distribution means according to an embodiment of the present invention has the following effects.

In a gas distribution plate composed of three gas distribution plates which simultaneously inject two kinds of process gases independently, by providing a space in which a refrigerant flows in a gas distribution plate including a nozzle for injecting the process gas onto a substrate. In addition, it is possible to prevent the occurrence of foreign substances due to the decomposition of the process gas, and also to prevent thermal deformation of the gas distribution means. The two gas distribution plates are manufactured by excavation or sheet metal processing, and only the gas distribution plates including nozzles are manufactured by using a brazing method, thereby realizing a simplified structure and reducing manufacturing costs.

By providing a temperature measuring means to the gas distribution plate including the nozzle, when processing by the brazing method or when the gas distribution plate rises above the proper temperature during the substrate processing process, it provides a signal to stop the processing or substrate processing process, It is possible to automatically stop the work or the substrate processing process by the stop signal, it is possible to prevent problems caused during the manufacturing process or substrate processing.

By constructing each of the first to third gas distribution plates with a plurality of first to third sub gas distribution plates, the gas distribution means can be easily manufactured.

With reference to the drawings will be described a preferred embodiment of the present invention; However, the present invention is not limited to the contents described in the embodiments, but may be embodied in various different forms, and only the embodiments of the present invention to fully inform the person skilled in the art the scope of the present invention. It is provided. Like numbers refer to like elements in the figures.

1 is a schematic diagram of a substrate processing apparatus according to a first embodiment of the present invention, FIG. 2 is a detailed cross-sectional view of a gas distribution means of the substrate processing apparatus according to the first embodiment of the present invention, and FIG. 4 is an exploded perspective view of a gas distribution means according to an embodiment, Figures 4a to 4c is a perspective view of manufacturing a third gas distribution plate according to a first embodiment of the present invention, Figure 5 is a first embodiment of the present invention It is a top view of a 2nd gas distribution board. Referring to Figures 1 to 5, the first embodiment of the present invention will be described.

As shown in FIG. 1, the substrate treating apparatus 110 is located in a process chamber 112 that provides a reaction space, an upper portion of the process chamber 112, and gas distribution means 114 and gas distribution means for supplying a process gas. A substrate holding means 118 facing the 114 and having the substrate 116 seated thereon, a substrate entrance 120 for entering and exiting the substrate 116, and an outlet 122 for discharging the reaction gas and by-products of the reaction space; It is configured to include. The gas distribution means 114 is connected to the RF power supply 124, and a matcher 126 for impedance matching is installed between the gas distribution means 114 and the RF power supply 124. However, the gas distribution means 114 is not connected to the RF power source 124, but a chemical vapor deposition (CVD) method of supplying a process gas to the reaction space and forming a film may be used.

The process chamber 112 includes a chamber lead 130 that is detachably coupled to the chamber body 128 and the chamber body 110 to seal the reaction space. The chamber body 110 is manufactured in a cylindrical or polygonal shape with an open top, and the chamber lead 130 is manufactured in a plate shape having a shape corresponding to that of the chamber body 110. Although not shown in the drawings, the chamber lid 130 and the chamber body 110 are interposed between a sealing member, for example, an O-ring or a gasket, and are coupled using a fixing member.

As illustrated in FIG. 2, when the substrate 116 is processed in the reaction space, the temperature of the reaction space is transferred to the chamber lead 130 coupled with the gas distribution means 114, thereby increasing the temperature of the chamber lead 130. In order to prevent that, the first flow path 146 through which the first refrigerant is circulated by the first refrigerant circulation device (not shown) is provided as the temperature adjusting means. While the first refrigerant circulates through the first flow path 146 provided inside the chamber lid 130, the temperature of the chamber lid 130 is suppressed from rising as the temperature of the reaction space increases, and additionally, the chamber lid ( The peripheral device installed above or adjacent to 130 is prevented from being heated up.

As shown in FIG. 1, the substrate mounting means 118 is supported by the support 132, and is moved up and down by the support 132. The support 132 is connected to the driving means 131 for providing a driving force. Between the support 132 and the drive means 131, a magnetic seal is connected by bellows (not shown) and rotational sealing means (not shown) to maintain airtightness when the support 132 is raised and lowered and rotated. do. The substrate setter 118 is manufactured in the same form as the substrate 116. Although FIG. 1 illustrates a substrate mounting means 118 in which one substrate 116 is placed, the substrate mounting stage 118 may include a plurality of susceptors on which a substrate is placed so that a plurality of substrates 116 may be placed therein. In addition, each of the plurality of susceptors may be composed of a disk having a plurality of insertion openings.

2 and 3, the gas distribution means 114 receives and receives the first process gas, receives the first gas distribution plate 134 and the second process gas through which the first process gas passes. And a second gas distribution plate 136 for passing the first and second process gases, and a third gas distribution plate 138 for injecting the first and second process gases in the direction of the substrate support 118. do.

The first gas distribution plate 134 has a first gas introduction pipe 134a through which the first process gas is introduced through the central portion of the chamber lead 130, and a first space 160 containing the first process gas. Baffle 134c as a distribution means for uniformly distributing the first process gas supplied from the first housing 134b and the first gas introducing pipe 134a into the first housing 134b, and 1 is provided on the bottom of the housing 134b, and comprises a plurality of first through holes 134d for passing the first process gas.

The second gas distribution plate 136 has a second gas introduction pipe 136a for introducing the second process gas through the chamber lead 130 and a second space 162 for receiving the second process gas. The side space of the housing 136b and the second housing 136b is divided by the partition wall 140 and connected to the second gas introduction pipe 136a to supply the second process gas to the second space 162. The buffer space 136c for accommodating the second process gas, the plurality of second passage holes 136d communicating with the plurality of first passage holes 134d and passing the first process gas, and the second housing 136b. It is configured to include a plurality of third through-hole 136e which is installed on the bottom surface and passes the second process gas.

The buffer space 136c is installed at the side of the second housing 136b, and a supply port 142 is provided at the partition wall 140 to uniformly supply the second process gas to the second space 162. The partition wall 140 is formed inside the sidewall at a predetermined distance from the sidewall along the sidewall of the second housing 136b. A buffer space 136c is formed between the partition wall 140 and the side wall of the second housing 136b, and the buffer space 136c accommodates the second process gas supplied from the second gas introduction pipe. The buffer space 136c has a ring shape of circular or polygonal shape, depending on the shape of the gas distribution means 114.

However, when a plurality of second gas introduction pipes 136a are installed, and each second gas introduction pipe 136a is connected to the side of the second housing 136b, a plurality of buffer spaces 136c shielded from each other. This can be formed. In addition, the plurality of buffer spaces 136c may be in communication with each other. In other words, when the second gas distribution plate 136 has a rectangular shape, one second gas introduction pipe 136a and a buffer space 136c may be installed at each side. In addition, the supply port 142 installed in the partition wall 140 may be formed of a plurality of openings that are continuously extended and have a slit form having the same height or are intermittently extended to form an isolated pattern.

The third gas distribution plate 138 is formed in the third housing 138a having the third space 164 through which the second refrigerant flows, the third housing 138a, and the plurality of second through holes 136d. A plurality of first nozzles 138b communicating with each of the plurality of nozzles and injecting the first process gas, a plurality of second nozzles 138c communicating with the plurality of third through holes 136e and injecting the second process gas; It is configured to include a refrigerant flow tube 152 connected to the third housing 138a to circulate the second refrigerant. The refrigerant flow pipe 152 includes a refrigerant supply pipe for supplying a second refrigerant to the third space 164 and a refrigerant discharge pipe for discharging the refrigerant in the third space 164. The refrigerant flow tube 152 is introduced into the process chamber 112 through the chamber lead 130 and connected to the side of the third housing 138a. The second refrigerant is circulated to a second refrigerant circulation device (not shown).

In the substrate processing apparatus 110, when the process of depositing a thin film on the substrate 116 at a high temperature of about 1000 degrees or more is performed for a long time, the gas distribution means 114 may be overheated at a heat resistance temperature or higher. In particular, overheating is severely generated in the third gas distribution plate 138 of the gas distribution means 114 facing the substrate setter 118. Therefore, a second refrigerant circulation device in which the second refrigerant circulates inside the third gas distribution plate 138 is provided as a cooling device for preventing overheating of the gas distribution means 114. In addition, in case an abnormality occurs in the second refrigerant circulation device, a first thermocouple 144 is installed on the third gas distribution plate 138 to measure the temperature of the gas distribution plate 114. And, if overheated above the heat resistance temperature to stop the heating of the process chamber 112.

In addition, a second thermocouple (not shown) may be provided in the second gas distribution plate 136. The temperature of each of the third gas distribution plate 138 and the second gas distribution plate 136 is measured by the first and second thermocouples, and the temperatures of the second and third gas distribution plates 136 and 138 are compared. The temperature of the second refrigerant is adjusted. When the temperature difference between the second and third gas distribution plates 136 and 138 becomes large, due to the difference in thermal expansion, the plurality of second passage holes 136d and the plurality of first nozzles 138b communicating with each other, The plurality of third through holes 136e and the plurality of second nozzles 138c may be misaligned. Therefore, the second and third gas distribution plates 136 and 138 adjust the temperature of the second refrigerant so that a temperature difference does not occur from each other, so that the plurality of second through holes 136d and the plurality of first holes due to thermal expansion are caused. It is possible to prevent misalignment of the nozzle 138b and the plurality of third through holes 136e and the plurality of second nozzles 138c.

2 and 3, the first gas distribution plate 134 of the gas distribution means 114 is fixed to the chamber lead 130, between the chamber lead 130 and the first gas distribution plate 134, A first space 160 is formed to accommodate the first process gas introduced through the first gas introduction pipe 134a. A depression 148 is formed in the chamber lead 130 corresponding to the first gas distribution plate 134, and between the depression 148 and the first space 160 formed by the first housing 134b. The baffle 134c is provided. The baffle 134c includes a plate 149 and a plurality of supply holes 150 boring the plate 149 to uniformly supply the first process gas of the contents 148 to the first space 160. To function.

If possible, in order to uniformly supply the first process gas of the depression 148 to the first space 160, so that any one of the plurality of supply holes 150 does not coincide with the first gas introduction pipe 134a. do. In other words, after the first process gas supplied through the first gas introduction pipe 134a is reflected by the baffle 134c and received in the depression 148, the first space 160 through the plurality of supply holes 150. To be supplied).

The first gas distribution plate 134 is manufactured using aluminum having easy workability. Bulk aluminum is used to excavate the interior to form a first space 160 to receive the first process gas, and to drill the bottom surface of the first space 160 to pass the first process gas. The first through hole 134d is formed. Instead of using bulk aluminum, the aluminum of the plate may be bonded to each other by welding or the like, and the lower portion may be perforated to form the first gas distribution plate 134.

The side wall of the first housing 134b is processed to have a thickness sufficient to cover at least the buffer space 136c installed in the second housing 136b from the second gas distribution plate 136. The side wall of the first housing 134b has a thickness sufficient to cover the buffer space 136c because the second gas introduction pipe 136a connected to the buffer space 136c includes the chamber lead 130 and It is because it pulls in through the side wall of the 1st housing 134b. Therefore, the side wall thickness of the first housing 134b is preferably processed to have the same thickness as the sum of the widths of the side walls of the second housing 136b and the buffer space 136c.

After the plurality of first through holes 134d of the first gas distribution plate 134 and the plurality of second through holes 136d of the second gas distribution plate 136 are aligned, the second gas distribution plate ( 136 is coupled to the first gas distribution plate 134. The second gas distribution plate 136 is manufactured using aluminum which is easily workable. A plurality of second through holes 136d penetrating up and down are formed in the bulk aluminum, and excavated between both sides of the bulk aluminum and the plurality of second through holes 136d to accommodate the buffer space 136c and the second process gas. The second space 162 is formed. Then, a plurality of third through holes 136e are formed by drilling through the plurality of second through holes 136d.

3 and 5, the bulk aluminum is excavated to maintain a constant thickness, thereby forming a plurality of pillars 166 in which the second through holes 136d are embedded. A lower portion of the plurality of pillars 166 constitutes a bottom surface of the second housing 136b in which the plurality of third through holes 136e are formed. The plurality of pillars 166 are formed in an isolated pattern, and the plurality of pillars 166 are excavated to form a second space 162 communicating with each other. Each of the pillars 166 may be formed in a cylindrical shape having the same shape as the second through hole 136d, but may be formed in a quadrangular shape as shown in FIG. 5 in consideration of convenience of processing.

When each of the pillars 166 is formed in a quadrangular shape, the corner portions may be rounded to smoothly flow the second process gas. Excavation of the bulk aluminum forms a sidewall of the second housing 136b in which the second space 162 is formed, and a partition wall 140 separating the buffer space 136c. The partition wall 140 is processed to form a supply hole 142 through which the second process gas is supplied.

3 and 5 illustrate that one pillar 166d is built in one pillar 166, but two or more second passage holes 136d in one pillar 166 as necessary. ) Can be embedded. However, when two or more second through holes 136d are embedded in one pillar 166, since the third through holes 136e are installed in a smaller number than the second through holes 136d, It is suitable when the second process gas passing through the plurality of first and second passage holes 134d and 136d is supplied at a higher flow rate than the first process gas. Therefore, in consideration of the supply ratio of the first and second process gas, the number of second through holes 136d embedded in one pillar 166 is adjusted and designed.

A plurality of first through holes 134d of the first gas distribution plate 134 and a plurality of second through holes 136d of the second gas distribution plate 136 are aligned to communicate with each other, and the second gas distribution plate 136 ) Is coupled to the first gas distribution plate 134, the lower portion of the first housing 134b of the first gas distribution plate 134 and the upper portion of the plurality of pillars 166 are in surface contact. Accordingly, the plurality of second through holes 136 d of the second gas distribution plate 136 through the plurality of first through holes 134 d of the first gas distribution plate 134 while maintaining the airtightness. Is delivered).

The distances of the adjacent second through holes 136d from one third through hole 136e are all the same. In other words, the third through hole 136e is positioned at the center of the four second through holes 136d. When the second gas distribution plate 136 is fastened to the first gas distribution plate 134, the second gas introduction pipe 136a passes through the chamber lead 130 and the first gas distribution plate 134. 136c). By processing the buffer space 136c and the second space 162, a partition wall 140 is formed between the buffer space 136c and the second space 162, and the second process gas accommodated in the buffer space 136c. Is supplied to the second space 162 through the supply hole 142.

Each of the plurality of second and third through holes 136d and 136e of the second gas distribution plate 136 communicates with the plurality of first and second nozzles 138b and 138c of the third gas distribution plate 138. The third gas distribution plate 138 is fastened to the second gas distribution plate 136 as much as possible. The third gas distribution plate 138 is manufactured using stainless steel or aluminum having strong heat resistance and corrosion resistance.

As shown in FIG. 4A, the third gas distribution plate 138 prepares the first and second plate members 170 and 172 using a stainless steel material, and the plurality of first and second nozzles 138b and 138c. Drilling a plurality of first and second openings 174, 176 corresponding to the plurality of first and second nozzles 138b, 138c for injecting the first and second process gases, as shown in FIG. 4B. Preparing a plurality of fin-type tubes 178 for use as a furnace, inserting and arranging the plurality of tubes 178 into the plurality of first and second openings 174 and 176, the plurality of tubes 178 Applying a paste (180) containing filler material on the first and second plate (170, 172) is arranged,

As shown in FIG. 4C, a plurality of first and second caps may be brazed to couple the plurality of tubes 178 to the first and second plate members 170 and 172 to inject the first and second process gases. Forming second nozzles 138b, 138c, cutting a plurality of tubes 178 located outside of third space 164 and protruding from first and plate 170, and first and first By arranging the side plates 182 using stainless steel and joining the side surfaces between the two plates 170 and 172 by using a method such as welding, the second space 164 has a third space in which the second refrigerant flows. And forming the third housing 138a. A coolant flow tube 152 penetrates through the chamber lid 130 to the side of the gas distributing means 114 and is connected to the side of the third housing 138a. By the flow of the third coolant, the gas distributing means ( Cool 114).

In FIG. 4B, the plurality of tubes 178 inserted into the plurality of first and second openings 174, 176 protrude out of the first and second plate members 170, 172, and the paste including the filler material is removed. 1 is applied to the top of the plate (170, 172). In other words, the paste applied on the upper portion of the first plate 170 is located outside the third space 164, and the paste applied on the upper portion of the second plate 172 is located inside the third space 164. Done. 4C, the plurality of tubes 178, which are located outside the third space 164 and protrude from the first and second plate members 170 and 172, are cut to form the first and second plate members ( 170 and 172 and multiple tubes 178 maintain the same plane.

Although not shown in FIGS. 4A to 4C, when a temperature measuring means, for example, a thermocouple is installed on the first or second plate 170 or 172, and the temperature measured during the brazing process exceeds an appropriate temperature, the operation is performed. Can be stopped. Many tubes of the pin type use the same material as the first and second plates 170, 172, but other materials may be used if desired. Brazing is a method of joining two base materials to be joined at a temperature of 450 ° C or higher by adding filler metal below the melting point, and depending on the type of paste including the base material and the filler material. The temperature may vary.

Each of the plurality of second through holes 136d and the plurality of third through holes 136e of the second gas distribution plate 136 includes the plurality of first and second nozzles 138b of the third gas distribution plate 138. , 138c are aligned so as to communicate with each other, and the third gas distribution plate 138 is coupled to the second gas distribution plate 136, the lower portion and the third of the second housing 136b of the second gas distribution plate 136. The upper portion of the third housing 138a of the gas distribution plate 138 is in surface contact. Thus, substrate holding means 118 through the plurality of second and third through holes 136d and 136e and the plurality of first and second nozzles 138b and 138c while maintaining the airtightness of the first and second process gases. Sprayed).

In FIGS. 2 and 3, the gas distribution means 114 is coupled to the chamber lead 130, but the gas distribution means 114 may be installed to be spaced apart from the chamber lead 130. When the chamber lead 130 and the gas distribution means 114 are spaced apart from each other, a rear plate connected to the first gas introduction pipe 134a is separately installed on the upper portion of the first gas distribution plate 134. In the embodiment of the present invention, when GaN is formed on the substrate 116, TMG is used as the first process gas and NH 3 is used as the second process gas.

6 is an exploded perspective view of a gas distribution means according to a second embodiment of the present invention, Figure 7a to 7c is a perspective view of the manufacturing of the third gas distribution plate according to a second embodiment of the present invention. In the second embodiment of the present invention, compared with the gas distribution means of the first embodiment, the components can be simplified while contributing to cost reduction. In the second embodiment of the present invention, the same reference numerals are used for the same components as those of the first embodiment.

As shown in FIG. 6, the gas distribution means 114 receives and receives the first process gas, receives the first gas distribution plate 134 and the second process gas through which the first process gas passes, and receives the first process gas. And a second gas distribution plate 136 for passing the second process gas, and a third gas distribution plate 138 for injecting the first and second process gases in the direction of the substrate support 118.

The first gas distribution plate 134 has a first gas introduction pipe 134a through which the first process gas is introduced through the central portion of the chamber lead 130, and a first space 160 containing the first process gas. Baffle 134c as a distribution means for uniformly distributing the first process gas supplied from the first housing 134b and the first gas introducing pipe 134a into the first housing 134b, and 1 is provided on the bottom of the housing 134b, and comprises a plurality of first through holes 134d for passing the first process gas. The first housing 134b is positioned below the first sidewall 190a and the first sidewall 190a surrounding the first space 160, and includes a first lower plate on which a plurality of first through holes 134d are installed. 190b).

The second gas distribution plate 136 has a second gas introduction pipe 136a for introducing the second process gas through the chamber lead 130 and a second space 162 for receiving the second process gas. The side space of the housing 136b and the second housing 136b is divided by the partition wall 140 and connected to the second gas introduction pipe 136a to supply the second process gas to the second space 162. The buffer space 136c for accommodating the second process gas, the plurality of second passage holes 136d communicating with the plurality of first passage holes 134d and passing the first process gas, and the second housing 136b. It is configured to include a plurality of third through-hole 136e which is installed on the bottom surface and passes the second process gas.

The second housing 136b is positioned below the second sidewall 192a and the second sidewall 192a surrounding the periphery of the second space 162, and includes a plurality of first through holes 134d and a plurality of third passages. It consists of the 2nd lower board 192b in which the hole 136e is formed. The buffer space 136c is installed in the side space of the second housing 136b, and the supply port 142 is installed in the partition wall 140 to uniformly supply the second process gas to the second space 162. The partition wall 140 is formed at a predetermined distance from the side wall 190a along the side wall 190a of the second housing 136b. A buffer space 136c is formed between the partition wall 140 and the sidewall 190a of the second housing 136b, and the buffer space 136c accommodates the second process gas supplied from the second gas introduction pipe. The buffer space 136c has a ring shape of circular or polygonal shape, depending on the shape of the gas distribution means 114.

However, when a plurality of second gas introduction pipes 136a are installed, and each second gas introduction pipe 136a is connected to the side wall 190a of the second housing 136b, a plurality of buffer spaces shielded from each other. 136c may be formed. In addition, the plurality of buffer spaces 136c may be in communication with each other. In other words, when the second gas distribution plate 136 has a rectangular shape, one second gas introduction pipe 136a and a buffer space 136c may be installed at each side. In addition, the supply port 142 installed on the partition wall 140 may be formed of a plurality of openings that are continuously extended and have a slit shape having the same height or are intermittently extended to form an isolated pattern.

The third gas distribution plate 138 is formed in the third housing 138a having the third space 164 through which the second refrigerant flows, the third housing 138a, and the plurality of second through holes 136d. A plurality of first nozzles 138b communicating with each of the plurality of nozzles and injecting the first process gas, a plurality of second nozzles 138c communicating with the plurality of third through holes 136e and injecting the second process gas; And a refrigerant flow tube (not shown) connected to the third housing 138a to circulate the second refrigerant. The third housing 138a is positioned below the third sidewall 194a and the third sidewall 194a surrounding the third space 164 and includes a plurality of first and second nozzles 138b and 138c installed therein. And three lower plates 194b.

The refrigerant flow pipe includes a refrigerant supply pipe for supplying a second refrigerant to the third space 164 and a refrigerant discharge pipe for discharging the refrigerant in the third space 164. The refrigerant flow tube 152 is introduced into the process chamber 112 through the chamber lead 130 and connected to the third sidewall 194a of the third housing 138a. The second refrigerant is circulated to a second refrigerant circulation device (not shown).

As shown in FIG. 7A, the third gas distribution plate 138 prepares a plate 220 using a material of stainless steel or aluminum, and corresponds to a plurality of first and second nozzles 138b and 138c. Drilling the first and second openings 174, 176, pins for use as a plurality of first and second nozzles 138b, 138c for injecting the first and second process gases, as shown in FIG. 7B. Preparing a plurality of tubes 178 of a type; inserting and arranging the plurality of tubes 178 into the plurality of first and second openings 174 and 176; a plate material in which the plurality of tubes 178 are arranged Applying a paste 180 comprising filler material on 220,

As shown in FIG. 7C, a plurality of first and second nozzles 138b and 138c may be brazed to couple the plurality of tubes 178 to the plate 220 to inject the first and second process gases. ) And arranging the side plate 182 using stainless steel or aluminum so as to surround the third space 164 and connect with the periphery of the plate 220, and by welding or the like. By combining, forming a third housing 138a having a third space 164 through which the second refrigerant flows. A coolant flow tube 152 penetrates through the chamber lid 130 to the side of the gas distributing means 114 and is connected to the side of the third housing 138a. By the flow of the third coolant, the gas distributing means ( Cool 114).

In the second embodiment of the present invention, the third housing 138a of the third gas distribution plate 138 does not include an upper plate and is composed of a third sidewall 194a and a third lower plate 194b, and a plurality of The second housing constituting the second gas distribution plate 136 includes a plurality of first and second nozzles 138b and 138c in the form of tubes communicating with the second through hole 136d and the third through hole 136e. It is in direct contact with the second lower plate 192b of 136b. Since the plurality of first and second nozzles 138b and 138c have a tube shape having a constant thickness, the upper portion of the plurality of first and second nozzles 138b and 138c is in surface contact with the lower portion of the second lower plate 192b. . Therefore, the second embodiment is formed by a process in which the third gas distribution plate 138 is compared with the first embodiment in a simpler manner.

8 is an exploded perspective view of a gas distribution means according to a third embodiment of the present invention, and FIG. 9 is a plan view of a substrate placing means according to a third embodiment of the present invention. The third embodiment of the present invention is characterized in that the first to third gas distribution plates are divided and manufactured when the gas distribution means is enlarged as compared with the first and second embodiments. In the third embodiment of the present invention, the same reference numerals are used for the same components as those of the first and second embodiments.

As illustrated in FIG. 8, the gas distribution unit 114 receives and receives the first process gas, receives the first gas distribution plate 134 and the second process gas through which the first process gas passes, and receives the first process gas. And a second gas distribution plate 136 through which the second process gas passes, and a third gas distribution plate 138 that injects the first and second process gases in a direction of a substrate stabilizer (not shown) of the process chamber. It includes.

The first gas distribution plate 134 has a first gas introduction pipe 134a through which the chamber lead 130 is introduced to introduce the first process gas, and a first space 160 containing the first process gas. A baffle 134c and a first housing as distribution means for uniformly distributing the first process gas supplied from the housing 134b and the first gas introduction pipe 134a into the first housing 134b. It is provided in the bottom surface of 134b, and consists of the several 1st sub gas distribution board 200 containing the several 1st passage hole 134d for passing a 1st process gas.

The first sub gas distribution plate 200 is formed differently according to the shape of the process chamber. In the third embodiment of the present invention, the first sub gas distribution plate 200 is manufactured in the shape of a fan and the first gas distribution is suitable for the case where a large number of circular wafers are loaded and processed as a substrate using a cylindrical process chamber. An end portion of the first sub gas distribution plate 200 adjacent to the center of the plate 134 is processed in an arc shape. When the first gas distribution plate 134 is assembled by combining a plurality of first sub gas distribution plates 200, a circular shape having a cavity in the center portion is formed.

When using a wafer as a substrate and loading a plurality of substrates 116 into the substrate placing means 118, as shown in FIG. 9, the substrate placing means 118 includes a plurality of susceptors 210 on which the substrate 116 is placed. ) And a disk 212 on which a plurality of susceptors 210 are installed. When the first gas distribution plate 134 is circular, the plurality of first sub gas distribution plates 200 are divided by a plurality of straight lines passing through the center of the first gas distribution plate 134 and the plurality of first sub plates. The gas distribution plate 200 has the same size. When the first gas distribution plate 134 is composed of six first sub gas distribution plates 200, an angle of each first sub gas distribution plate 200 adjacent to the central portion of the first gas distribution plate 134. Is 60 degrees. When the first gas distribution plate 134 is a quadrangle, the first sub gas distribution plate 200 is divided into a plurality of quadrangles having a uniform size.

The first housing 134b is positioned below the first sidewall 190a and the first sidewall 190a surrounding the first space 160, and includes a first lower plate 190b in which a plurality of first through holes 134d are installed. ). As shown in FIG. 9, the plurality of susceptors 210 are not installed at the center of the disk 212. Therefore, since the substrate 116 is not settled in the central portion of the disk 212, even if the central portion of the first gas distribution plate 134 is formed as the cavity 202, the process of processing the substrate 116 is affected. Do not give.

Also. Since the end portion of the first sub gas distribution plate 200 is circularly arced to form a pupil in the center portion of the first gas distribution plate 134, the first sub gas distribution plate 200 is easily manufactured and assembled. . When the end of the first sub gas distribution plate 200 is formed to extend to the center of the process chamber, a plurality of first through holes 134d are formed in the first lower plate 190b of the first housing 134b corresponding to the end. It becomes difficult to form uniformly.

In order to supply the first process gas to the first space 160 of the plurality of first sub gas distribution plates 200, the first gas introducing pipe 134a branches into the plurality of first sub gas introducing pipes 204. do. The first sub gas introducing pipe 204 is uniformly connected to the first sub gas distribution plate 200 by one or two or more. The first sub gas introduction pipe 204 is embedded in the chamber lead 130 to supply the first process gas in the center of the first sub gas distribution plate 200 or the first gas introduction pipe from the outside of the process chamber. Branched from 134a to the first sub gas introducing pipe 204, the first sub gas introducing pipe 204 penetrates through the chamber lead 130, and the first space of the first sub gas distribution plate 200. The first process gas may be supplied to the 160.

In the third embodiment, unlike the first and second embodiments, the recess 148 may not be formed in the chamber lead 130. When the stepped portion 230 is installed along the inner circumference of the side wall 190a of the first housing 134b and the baffle 134c is positioned on the stepped portion 230, the baffle ( An accommodating space 232 is formed above the 134c to accommodate the first process gas supplied from the first sub gas introducing pipe 204. The baffle 134c functions to uniformly supply the first process gas in the accommodation space 232 to the first space 160.

The second gas distribution plate 136 includes a second gas introduction pipe (136a in FIG. 1) for introducing the second process gas through the chamber lid 130, and a second space 162 for receiving the second process gas. The side spaces of the second housing 136b and the second housing 136b are divided by the partition wall 140, and are connected to the second gas introduction pipe 136a to supply the second process gas to the second space 162. A buffer space 136c for receiving the second process gas, a plurality of second passage holes 136d communicating with the plurality of first passage holes 134d and allowing the first process gas to pass therethrough, and a second housing ( It is composed of a plurality of second sub gas distribution plates 206 installed on the bottom of 136b and including a plurality of third through holes 136e through which the second process gas passes.

The second sub gas distribution plate 206 is manufactured in the same form as the first sub gas distribution plate 200. Accordingly, similarly to the first sub gas distribution plate 200, the second sub gas distribution plate 206 is formed in a fan shape, and the second sub gas distribution plate 206 adjacent to the center of the second gas distribution plate 136 is formed. The end of) is treated in the form of an arc. When the plurality of second sub gas distribution plates 200 are assembled to assemble the second gas distribution plates 136, the second gas distribution plates 136 are circular having a cavity at the center thereof. The second housing 136b is positioned below the second sidewall 192a and the second sidewall 192a surrounding the periphery of the second space 162, and includes a plurality of first through holes 134d and a plurality of third passages. It consists of the 2nd bottom surface 192b in which the hole 136e is formed.

The buffer space 136c is installed in the side space of the second housing 136b, and the supply port 142 is installed in the partition wall 140 to uniformly supply the second process gas to the second space 162. The partition wall 140 is formed inside the sidewall at a predetermined distance from the sidewall along the sidewall of the second housing 136b. A buffer space 136c is formed between the partition wall 140 and the side wall of the second housing 136b, and the buffer space 136c accommodates the second process gas supplied from the second gas introduction pipe. The supply port 142 installed in the partition wall 140 may be formed of a plurality of openings that are continuously extended and have a slit shape having the same height or are intermittently extended to form an isolation pattern.

The third gas distribution plate 138 is formed in the third housing 138a having the third space 164 through which the second refrigerant flows, the third housing 138a, and the plurality of second through holes 136d. A plurality of first nozzles 138b communicating with each of the plurality of nozzles and injecting the first process gas, a plurality of second nozzles 138c communicating with the plurality of third through holes 136e and injecting the second process gas; And a third sub gas distribution plate 208 including a refrigerant flow tube connected to the third housing 138a to circulate the second refrigerant.

The refrigerant flow pipe includes a refrigerant supply pipe for supplying a second refrigerant to the third space 164 and a refrigerant discharge pipe for discharging the refrigerant in the third space 164. The refrigerant flow tube is introduced into the process chamber through the chamber lead 130 and connected to the side of the third housing 138a. The second refrigerant is circulated to a second refrigerant circulation device (not shown).

The third sub gas distribution plate 208 is manufactured in the same form as the first and second sub gas distribution plates 200 and 206. Accordingly, similarly to the first and second sub gas distribution plates 200 and 206, the third sub gas distribution plate 208 is manufactured in a fan shape, and the third sub gas distribution plate 138 is adjacent to the center of the third gas distribution plate 138. The end of the gas distribution plate 208 is processed in the form of an arc. When a plurality of third sub gas distribution plates 208 are assembled to form a third gas distribution plate 138, the third gas distribution plate 138 is circular with a cavity at the center thereof. The third housing 138b is positioned below the third sidewall 194a and the third sidewall 194a surrounding the periphery of the third space 164, and a plurality of first and second nozzles 138b and 138c are installed. Consisting of a third lower plate 194b.

In the third embodiment of the present invention, the third housing 138a of the third sub gas distribution plate 138 is composed of a third side wall 194a and a third lower plate 194b, and a plurality of second through holes. A plurality of first and second nozzles 138b and 138c in the form of tubes communicating with the 136d and the third passage holes 136e constitute the second housing 136b constituting the second gas distribution plate 136. 2 is in direct contact with the lower plate (192b). If necessary, the third housing 138a may include a top plate to which the plurality of first and second nozzles 138b and 138c communicate. Since the plurality of first and second nozzles 138b and 138c are in the form of tubes having a constant thickness, an upper portion of the plurality of first and second nozzles 138b and 138c is in surface contact with a lower portion of the second heat plate 192b. . Therefore, the second embodiment is formed by a simple process comparing the third gas distribution plate 138 with the first embodiment.

1 is a schematic view of a substrate processing apparatus according to a first embodiment of the present invention;

2 is a detailed cross-sectional view of the gas distribution means of the substrate processing apparatus according to the first embodiment of the present invention.

3 is an exploded perspective view of a gas distribution means according to a first embodiment of the present invention;

4A to 4C are perspective views of the third gas distribution plate according to the first embodiment of the present invention.

5 is a plan view of a second gas distribution plate according to the first embodiment of the present invention;

6 is an exploded perspective view of a gas distribution means according to a second embodiment of the present invention;

7A to 7C are perspective views of the third gas distribution plate according to the second embodiment of the present invention.

8 is an exploded perspective view of a gas distribution means according to a third embodiment of the present invention;

9 is a plan view of a substrate setter according to a third embodiment of the present invention.

Claims (26)

A first gas distribution plate connected to a first gas introduction pipe for introducing a first process gas and including a plurality of first passage holes through which the first process gas passes; A plurality of second passage holes that are connected to a second gas introduction pipe for introducing a second process gas and aligned with the plurality of first passage holes to allow the first process gas to pass through and the second process gas to pass through the second process gas; A second gas distribution plate comprising a third through hole of the second gas distribution plate; A third gas distribution plate aligned with the plurality of second and third passage holes and including a plurality of first and second nozzles for injecting the first and second process gases, respectively, and a space in which a refrigerant flows; Gas distribution means of the substrate processing apparatus comprising a. The method of claim 1, The first gas distribution plate, Evenly distributing the housing including a housing for accommodating the first process gas supplied from the first gas introducing pipe, and the first process gas installed in the space and introduced from the first gas introducing pipe. Gas distribution means for a substrate processing apparatus comprising a distribution means for. The method of claim 1, The first gas distribution plate may include a housing including a space accommodating the first process gas supplied from the first gas introduction pipe, and the first gas distribution pipe installed in the space and introduced from the first gas introduction pipe. 1. The gas distribution means of the substrate treating apparatus, comprising a plurality of first sub gas distribution plates having distribution means for uniformly distributing the process gas. The method of claim 3, wherein An inner wall of the housing includes a stepped portion, wherein the distribution means is located in the stepped portion gas distribution means of the substrate processing apparatus. The method of claim 3, wherein And the first sub gas distribution plate has a fan shape, and is circularly treated at an end portion adjacent to a central portion of the first gas distribution plate. The method according to claim 2 to 5, And the distribution means includes a plate and a plurality of supply holes for drilling the plate. The method of claim 2, The second gas distribution plate includes a second housing having a buffer space accommodating a second process gas supplied from the second gas introduction pipe and a second space accommodating the second process gas supplied from the buffer space. And the side wall of the housing of the first gas distribution plate has a thickness covering the buffer space of the second housing. The method of claim 1, The second gas distribution plate, A housing connected to the second gas introduction pipe and providing a space for receiving the second process gas; A plurality of pillars in which the plurality of second passage holes are embedded in the space; The plurality of third through holes formed in the lower portion of the housing; Gas distribution means of the substrate processing apparatus comprising a. The method of claim 8, The second gas distribution plate, A partition wall installed inside the space; A buffer space divided by the side wall of the housing and the partition wall and accommodating the second process gas supplied from the second gas introduction pipe; Gas distribution means of the substrate processing apparatus comprising a. The method of claim 9, And the second gas distribution plate comprises a supply hole provided to the partition wall to supply the second process gas of the buffer space to the space. The method of claim 8, The second gas distribution plate, A housing connected to the second gas introduction pipe and providing a space for receiving the second process gas; A plurality of pillars in which the plurality of second passage holes are embedded in the space; The plurality of third through holes formed in the lower portion of the housing; Gas distribution means for a substrate processing apparatus comprising a plurality of second sub-gas distribution plate having a. The method of claim 1, The third gas distribution plate may include a housing including the space in which the plurality of first and second nozzles are installed and the refrigerant flows, and a refrigerant flow tube connected to the housing to supply or discharge the refrigerant. A gas distribution means of the substrate processing apparatus characterized by the above-mentioned. 13. The method of claim 12, The housing may include a side wall surrounding a side of the space, an upper plate positioned at an upper side of the side wall, and a top plate communicating with the plurality of first and second nozzles, and a lower plate located at the lower side of the side wall. Gas distribution means of the substrate processing apparatus comprising a lower plate in communication. 13. The method of claim 12, The housing includes a side wall surrounding the side of the space and the gas distribution means of the substrate processing apparatus, characterized in that the lower plate in which the plurality of first and second nozzles in direct contact with the second gas distribution plate is located. 13. The method of claim 12, The third gas distribution plate may include a housing including the space in which the plurality of first and second nozzles are installed and the refrigerant flows, and a refrigerant flow tube connected to the housing to supply or discharge the refrigerant. A gas distribution means of a substrate processing apparatus comprising a sub gas distribution plate. The method of claim 1, And the first gas distribution plate and the second gas distribution plate are made of aluminum, and the third gas distribution plate is made of stainless steel or aluminum. The method of claim 1, The gas distribution means of the substrate processing apparatus, characterized in that the temperature measuring means is provided on the third gas distribution plate. The method of claim 1, And a first temperature measuring means and a second temperature measuring means, respectively, on the second gas distribution plate and the third gas distribution plate. A process chamber providing a reaction space; A first gas distribution plate and a second process gas installed in the reaction space and connected to a first gas introduction pipe for introducing a first process gas and including a plurality of first passage holes through which the first process gas passes; A plurality of second passage holes connected to a second gas introduction pipe for introducing a plurality of second passage holes to pass through the first process gas and aligned with the plurality of first passage holes to pass the second process gas; A second gas distribution plate including a hole, and a plurality of first and second nozzles which are aligned with the plurality of second and third passage holes to inject the first and second process gases, respectively, and a space in which the refrigerant flows. Gas distribution means comprising a third gas distribution plate comprising a; Substrate holding means opposed to the gas distribution means and for placing a substrate; Substrate processing apparatus comprising a. The method of claim 19, The process chamber comprises a chamber body and a chamber lead, the substrate processing apparatus, characterized in that the first gas distribution plate is coupled to the chamber lead. The method of claim 19, The chamber lid includes a recess formed in a portion corresponding to the first gas distribution plate and connected to the first gas introduction pipe, and the first gas distribution plate includes a space for accommodating the first process gas. And a baffle for uniformly distributing the first process gas between the depression and the space. The method of claim 19, The chamber lead is characterized in that the refrigerant passage through which the refrigerant is circulated is formed. The method of claim 19, And a first gas distribution plate spaced apart from the chamber lead. Forming a first gas distribution plate connected to a first gas introduction pipe for introducing a first process gas and including a plurality of first passage holes through which the first process gas passes; A plurality of second passage holes that are connected to a second gas introduction pipe for introducing a second process gas and aligned with the plurality of first passage holes to allow the first process gas to pass through and the second process gas to pass through the second process gas; Forming a second gas distribution plate including a third through hole of the second gas distribution plate; Forming a third gas distribution plate including a plurality of first and second nozzles which are aligned with the plurality of second and third through holes, respectively, and a space in which a refrigerant flows, and a plurality of first and second nozzles respectively injecting the first and second process gases; step; Coupling the second gas distribution plate to the first gas distribution plate and the third gas distribution plate to the second gas distribution plate; Method for producing a gas distribution means of the substrate processing apparatus comprising a. The method of claim 24, The third gas distribution plate, Preparing a first plate and a second plate; Drilling a plurality of openings corresponding to the plurality of first and second nozzles in the first plate and the second plate; Arranging a plurality of tubes between the first plate and the second plate to correspond to the plurality of openings; Bonding the first plate and the second plate to the plurality of tubes using a brazing method; Coupling a peripheral portion of the first plate and the second plate with a third plate to form a housing; Connecting a refrigerant flow tube for supplying and discharging refrigerant to a side wall of the housing; Method for producing a gas distribution means of the substrate processing apparatus comprising a. The method of claim 24, The third gas distribution plate, Preparing a plate; Drilling a plurality of openings corresponding to the plurality of first and second nozzles in the plate; Arranging a plurality of tubes to correspond with the plurality of openings of the plate; Joining the plate with the plurality of tubes using a brazing method; Coupling a peripheral portion of the plate with a third plate to form a housing; Connecting upper portions of the plurality of first and second nozzles to contact lower portions of the second gas distribution plate; Connecting a refrigerant flow tube for supplying and discharging refrigerant to a side wall of the housing; Method for producing a gas distribution means of the substrate processing apparatus comprising a.

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