US20110139223A1 - Solar cell module using semiconductor nanocrystals - Google Patents

Solar cell module using semiconductor nanocrystals Download PDF

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Publication number
US20110139223A1
US20110139223A1 US12/969,062 US96906210A US2011139223A1 US 20110139223 A1 US20110139223 A1 US 20110139223A1 US 96906210 A US96906210 A US 96906210A US 2011139223 A1 US2011139223 A1 US 2011139223A1
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solar cell
semiconductor nanocrystals
layer
cell module
solar cells
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US12/969,062
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English (en)
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Hyunjung PARK
Jiweon Jeong
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LG Electronics Inc
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LG Electronics Inc
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Assigned to LG ELECTRONICS INC. reassignment LG ELECTRONICS INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JEONG, JIWEON, PARK, HYUNJUNG
Publication of US20110139223A1 publication Critical patent/US20110139223A1/en
Priority to US14/866,447 priority Critical patent/US10651331B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Definitions

  • Embodiments of the present invention relate to a solar cell and a solar cell module manufactured using a material having a down converting characteristic, and more particularly to a solar cell and a solar cell module which increases the number of photons incident upon solar cells or absorption rate of incident light, and thus increases an amount of generated current to improve photoelectric conversion efficiency thereof.
  • Solar cells are devices which convert light energy into electric energy using a photovoltaic effect.
  • Solar cells have advantages, such as being non-polluting, having an infinite energy resource, and having a life-span that is semi-permanent, and are expected as an energy source which eventually solves energy problems of civilization as well as a myriad of environmental problems.
  • Solar cells can be grouped into silicon solar cells, thin film solar cells, dye-sensitized solar cells, organic compound solar cells and so on, according to materials constituting the solar cells. Since crystalline silicon solar cells among these various types of solar cells make up the majority of global solar cell production, and have efficiency higher than other solar cells, techniques to lower the unit cost of production of the crystalline silicon solar cells have been continuously developed, and the crystalline silicon solar cells are known as the most popular solar cells.
  • solar cells are manufactured to have a module structure in which the solar cells performing a photoelectric conversion function are packaged with protective members, fillers, and reinforcing members.
  • Embodiments of the present invention propose a technique to improve the solar cells and the solar cell module so as to increase the photoelectric conversion efficiency of the solar cells and the solar cell modules.
  • An object of the present invention is to provide a solar cell and a solar cell module thereof which is applicable to various solar cells, while utilizing a manufacturing process of the solar cell module using solar cells, so as to increase photoelectric conversion efficiency.
  • Another object of the present invention is to provide a solar cell and a solar cell module thereof manufactured using an energy down converting material which converts light incident upon the solar cell to increase an amount of absorption rate of the light or the number of photons of the light, so as to increase photoelectric conversion efficiency of the solar cell.
  • a solar cell module including solar cells according to an example embodiment of the present invention, and including an insertion layer containing semiconductor nanocrystals having down converting characteristics for converting incident light into emitted light having energy lower than that of the incident light, thereby increasing the number of photons of the incident light or the amount of absorption rate of the incident light and thus increasing photoelectric conversion efficiency of the solar cells.
  • the solar cell module may include a plurality of solar cells each including at least one photoelectric conversion layer, at least one transparent member provided on upper surfaces of the plurality of solar cells, and a filling layer to seal the plurality of solar cells, wherein at least one layer selected from the at least one transparent member and the filling layer contains semiconductor nanocrystals.
  • the solar cell module may further include a back sheet provided on lower surfaces of the plurality of, solar cells.
  • a solar cell module including solar cells each including at least one semiconductor layer and at least one layer, such as at least one anti-reflection film, provided on surfaces of the solar cells upon which light is incident, at least one transparent member provided on upper surfaces of the solar cells, and a filling layer to seal the solar cells.
  • at least one layer selected from the at least one transparent member, the at least one transparent member, and the filling layer contains semiconductor nanocrystals which emit light at energy lower than that of the incident light.
  • any one layer selected from a plurality of layers of the anti-reflection film, any one transparent member selected from a plurality of transparent members, or the filling layer may contain the semiconductor nanocrystals dispersed therein.
  • plural layers selected from the above layers may contain the semiconductor nanocrystals.
  • An uppermost anti-reflection film of a plurality of anti-reflection film may contain the semiconductor nanocrystals.
  • a plurality of anti-reflection films may be formed on front surfaces of the solar cells.
  • any one of the plurality of anti-reflection films may contain the semiconductor nanocrystals, and the uppermost anti-reflection film close to a surface of the solar cell module upon which light is incident may preferably, but not necessarily, contain the semiconductor nanocrystals.
  • the at least one transparent member may include a transparent resin film.
  • the at least one transparent member may include a rigid transparent substrate and a transparent resin film, and the transparent resin film may contain the semiconductor nanocrystals.
  • the rigid transparent substrate may be a glass substrate or a transparent polymeric plastic substrate.
  • the transparent resin film may be formed on at least one of a front surface and a rear surface of the rigid transparent substrate.
  • a solar cell including at least one photoelectric conversion layer and at least one layer, such as at least one anti-reflection film, provided on a surface of the at least one photoelectric conversion layer upon which light is incident, wherein the at least one anti-reflection film contains semiconductor nanocrystals.
  • the at least one anti-reflection film may include two or more layers, and an uppermost layer of the two or more layers may contain the semiconductor nanocrystals.
  • the at least one photoelectric conversion layer may include a first conductivity-type semiconductor substrate and an emitter layer doped with a second conductivity-type impurity provided on the first conductivity-type semiconductor substrate, and the solar cell may further include first electrodes connected to the emitter layer and a second electrode connected to the first conductivity-type semiconductor substrate.
  • the at least one anti-reflection film may include a first anti-reflection film including at least one layer and formed on an upper surface of the emitter layer such that first electrodes are connected to the emitter layer through the first anti-reflection film, and a second anti-reflection film formed on a front surface of the first anti-reflection film, and containing the semiconductor nanocrystals.
  • a solar cell module including a solar cell layer in which a plurality of solar cells having at least one semiconductor layer is connected in series, a back sheet provided on a lower surface of the solar cell layer, a transparent member provided on an upper surface of the solar cell layer, and a filling layer to seal the plurality of solar cells in the solar cell layer, wherein at least one layer selected from the filling layer and the transparent member contains semiconductor nanocrystals which converts incident light into light having energy lower than that of the incident light and then emits the converted light having the lower energy.
  • FIGS. 1 to 5 are longitudinal-sectional views illustrating structures of solar cells using semiconductor nanocrystals in accordance with embodiments of the present invention.
  • FIGS. 6 to 9 are longitudinal-sectional views illustrating structures of solar cell modules using a plurality of solar cells in accordance with embodiments of the present invention.
  • FIGS. 1 to 5 are longitudinal-sectional views illustrating structures of solar cells using semiconductor nanocrystals in accordance with embodiments of the present invention.
  • the solar cell of FIG. 1 includes an emitter layer 102 provided on a front surface (or a light incident surface) of a silicon semiconductor substrate 100 and doped with a semiconductor impurity of a type differing from a semiconductor impurity of the silicon semiconductor substrate 100 , an anti-reflection film 106 formed on the front surface of the emitter layer 102 , front electrodes 104 formed on the emitter layer 102 by a selective patterning, and a rear electrode 108 formed on a rear surface (or a surface opposite to the light incident surface) of the silicon semiconductor substrate 100 .
  • Such solar cells are photoelectric conversion members, which absorb light, such as sunlight, and convert the light into electric energy.
  • the silicon semiconductor substrate 100 may be a p-type silicon semiconductor substrate, and the emitter layer 102 may be an n-type semiconductor layer.
  • FIG. 1 illustrates a structure of a particular solar cell
  • a solar cell usable herein is not limited to the above structure and may be manufactured using various structures and types, such as a crystalline type or a thin film type.
  • the solar cell of FIG. 1 further includes a filling layer 110 formed on an upper surface (or a front surface) of the solar cell.
  • Semiconductor nanocrystals 115 for emitting light at energy lower than energy of incident light are dispersed within the filling layer 110 .
  • An amount of the semiconductor nanocrystals 115 dispersed in the filling layer 110 may be about 1% to 10% by weight relative to a weight of the filling layer 110 .
  • the filling layer 110 of FIG. 1 within which the semiconductor nanocrystals 115 are dispersed may be made of Ethylene Vinyl Acetate copolymer (EVA) which is a filling material for solar cells.
  • EVA Ethylene Vinyl Acetate copolymer
  • the filling layer 110 is stacked on the solar cell by applying a solution, in which the semiconductor nanocrystals 115 are mixed and dispersed within an EVA material, to the solar cell.
  • a stacking temperature of the filling layer 110 may be about 300 ⁇ 400° C.
  • a separate film containing semiconductor nanocrystals 215 is formed on a filling layer 210 on a solar cell. That is, the solar cell in accordance with this embodiment has a structure in which a separate transparent resin film 220 within which the semiconductor nanocrystals 215 are dispersed is formed on the filling layer 210 .
  • the solar cell in accordance with this embodiment includes a silicon substrate 200 , an emitter layer 202 formed on the silicon substrate 200 , an anti-reflection film 206 and front electrodes 204 formed on the front surface of the emitter layer 202 , and a rear electrode 208 . Further, the filling layer 210 made of EVA, and the transparent resin film 220 in which the semiconductor nanocrystals 215 are dispersed within a transparent resin film material thereof, are respectively formed on the solar cell.
  • the dispersion solution When a corresponding dispersion solution is applied to the solar cell, the dispersion solution is treated at a temperature less than a melting point of the EVA so as to prevent or reduce the filling layer 210 , made of EVA and formed under the transparent resin film 220 (which is an arrangement that is different from the embodiment of FIG. 1 ) from melting. Therefore, the dispersion solution is preferably, but not necessarily, treated at a temperature of about 150° C.
  • FIG. 3 illustrates a structure of a solar cell module in accordance with another embodiment of the present invention.
  • the solar cell in accordance with this embodiment includes a silicon substrate 300 , an emitter layer 302 formed on the silicon substrate 300 , an anti-reflection film 306 and front electrodes 304 formed on the front surface of the emitter layer 302 , a rear electrode 308 , and another anti-reflection film 320 formed on the solar cell.
  • At least one anti-reflection film may be added to the front surface of the solar cell module, upon which the incident light, such as sunlight, is incident.
  • At least one of the at least one anti-reflection film may contain semiconductor nanocrystals.
  • an uppermost anti-reflection film 320 may contain the semiconductor nanocrystals 315 .
  • the uppermost anti-reflection film 320 preferably, but not necessarily, contains the semiconductor nanocrystals 315 .
  • Dispersion of the semiconductor nanocrystals 315 in the anti-reflection film 320 is achieved through a low-temperature solution process to stabilize material properties, and such a process is preferably, but not necessarily, carried out at a temperature of about 300 ⁇ 400° C.
  • the plural anti-reflection films 306 and 320 are preferably, but not necessarily, formed such that refractive indices of the anti-reflection films 306 and 320 are sequentially increased as the anti-reflection films 306 and 320 become increasingly distant from the surface upon which incident light is incident.
  • the refractive index of the uppermost anti-reflection film 320 containing the semiconductor nanocrystals 315 is about 1.5 ⁇ 2.0.
  • a filling layer 310 made of Ethylene Vinyl Acetate copolymer (EVA) is formed on the uppermost anti-reflection film 320 containing the semiconductor nanocrystals 315 .
  • FIGS. 4 and 5 illustrate structures of solar cells using semiconductor nanocrystals in accordance with other embodiments of the present invention. With reference to FIGS. 4 and 5 , a plurality of transparent members are formed on solar cells.
  • the solar cells of FIGS. 4 and 5 respectively include silicon substrates 400 and 500 , emitter layers 402 and 502 formed on the silicon substrates 400 and 500 , anti-reflection films 406 and 506 and front electrodes 404 and 504 formed on the front surfaces of the emitter layers 402 and 502 , and rear electrodes 408 and 508 .
  • the transparent members are formed on the respective solar cells.
  • a rigid transparent substrate 420 i.e., a glass substrate
  • a flexible transparent resin film 430 are formed on a filling layer 410 formed on the solar cell.
  • the transparent resin film 430 contains semiconductor nanocrystals 415 having a down converting function.
  • the transparent resin film 430 containing the semiconductor nanocrystals 415 may be formed as a plurality of layers, and the semiconductor nanocrystals 415 having the down converting function may be dispersed within an uppermost layer of the plurality of layers of the transparent resin film 430 .
  • the transparent resin film 430 containing the semiconductor nanocrystals 415 may be selectively formed on one surface of the rigid transparent substrate 420 , i.e., the front surface of the rigid transparent substrate 420 upon which light is incident or the rear surface of the rigid transparent substrate 420 .
  • a filling layer 510 is formed on the solar cell
  • a rigid transparent substrate 530 serving as a transparent member is formed on the filling layer 510
  • transparent resin films 540 and 520 are respectively formed on the upper surface (or the front surface) and the lower surface (or the rear surface) of the rigid transparent substrate 530 .
  • any one layer of the transparent resin film 540 formed on the upper surface of the rigid transparent substrate 530 and the transparent resin film 520 formed on the lower surface of the rigid transparent substrate 530 may contain the semiconductor nanocrystals 515 .
  • FIGS. 6 to 9 are longitudinal-sectional views illustrating structures of solar cell modules using a plurality of solar cells in accordance with embodiments of the present invention.
  • a plurality of solar cells are connected in series, and filling layers are formed to seal the plurality of solar cells.
  • the filling layers may be formed on the upper surface (or the front surface) and the lower surface (or the rear surface) of a solar cell layer including the plurality of solar cells, and a transparent member may be formed on an upper surface (a front surface) or a lower surface (a rear surface) of an upper filling layer.
  • a back sheet may be provided on the lower surface of a lower filling layer, and a transparent resin film, a glass substrate, or both the transparent resin film and the glass substrate may be provided on the upper surface of the upper filling layer.
  • At least one layer selected from the above-described transparent resin film, filling layers, and glass substrate may contain semiconductor nanocrystals which emit light having energy lower than that of the incident light. Consequently, photoelectric conversion efficiency of the solar cells may be improved or maximized.
  • FIG. 6 is a structure of a solar cell module in accordance with one embodiment of the present invention, in which a filling layer 610 contains semiconductor nanocrystals 615 , in a similar manner as the embodiment of FIG. 1 .
  • filling layers 610 are respectively formed or disposed on front surfaces and rear surfaces of a plurality of solar cells 640 , which may be series connected, and are laminated by heat and pressure together with transparent members, such as a back sheet 630 and a glass substrate.
  • transparent members such as a back sheet 630 and a glass substrate.
  • an upper filling layer 610 and a lower filling layer 610 are melted and hardened together, thereby completely sealing the plurality of solar cells 640 .
  • the upper filing layer 610 preferably, but not necessarily, contains the semiconductor nanocrystals 615 .
  • the transparent resin film or the glass substrate may be formed or disposed on an upper surface of the upper filling layer 610 , as needed or desired.
  • FIG. 7 is a structure of a solar cell module in accordance with another embodiment of the present invention, in which a separate transparent resin film 720 containing semiconductor nanocrystals 715 is formed or disposed on an upper surface of an upper filling layer 710 , in a similar manner as the embodiment of FIG. 2 .
  • the transparent resin film 720 containing the semiconductor nanocrystals 715 may be formed or disposed on a front surface or a rear surface of the upper filling layer 710 in a similar manner as the embodiment of FIG. 2
  • this embodiment illustrates that the transparent resin film 720 is formed on the front surface of the upper filling layer 710 .
  • a glass substrate may be added to an upper surface of a solar cell layer of a plurality of solar cells 740 , as needed or desired.
  • the plurality of solar cells 740 may be series connected.
  • FIG. 8 is a structure of a solar cell module in accordance with another embodiment of the present invention, in which a transparent resin film 820 containing semiconductor nanocrystals 815 is formed or disposed on a glass substrate 850 , in a similar manner as the embodiment of FIG. 4 or 5 .
  • the transparent resin film 820 containing the semiconductor nanocrystals 815 may be formed or disposed on a front surface or a rear surface of the glass substrate 850 in a similar manner as the embodiment of FIG. 4 or 5
  • this embodiment illustrates that the transparent resin film 820 is formed on the front surface of the glass substrate 850 .
  • a plurality of solar cells 840 may be series connected.
  • FIG. 9 is a structure of a solar cell module in accordance with another embodiment of the present invention, in which an anti-reflection film 960 containing semiconductor nanocrystals 915 is formed or disposed on front surfaces of a solar cell layer of a plurality of solar cells 940 , in a similar manner as the embodiment of FIG. 2 .
  • the anti-reflection film 960 containing the semiconductor nanocrystals 915 may be formed as a single layer or a plurality of layers.
  • a glass substrate may be added to the front surface (an upper surface) of the solar cell layer, as needed or desired.
  • back sheets 630 , 730 , 830 , and 930 are selective components, and thus may be excluded in the present invention, as needed or desired. That is, in the solar cell module, glass substrates may be formed on the upper surface and the lower surface of the solar cell layer of the plurality of solar cells without the back sheet.
  • a solar cell and a module thereof in accordance with embodiments of the present invention are manufactured using an energy down converting material which converts light incident upon the solar cell or the module thereof to increase an amount of absorption rate of the light or the number of photons of the light, thereby increasing photoelectric conversion efficiency of overall solar cells or a module thereof.
  • diameters and/or sizes of semiconductor nanocrystals which may be dispersed within a layer, are not specifically limited. Further, the diameters and/or the sizes of the semiconductor nanocrystals which may be dispersed within a layer may be the same or different. Preferably, but not necessarily, the diameters and/or the sizes of the semiconductor nanocrystals may be nano-meter sized. The diameters of the semiconductor nanocrystals may be in the range of about 1 nm to 100 nm. Thus, the semiconductor nanocrystals may be particles, portions, pieces, or fragments.
  • the semiconductor nanocrystals may be nanocrystals of a material which converts a wavelength of light. That is, the semiconductor nanocrystals may be nanocrystals of a down converting material which converts incident light into light having energy of a lower level than that of the incident light and then emits the converted light.
  • the semiconductor nanocrystals may convert the incident light of a short wavelength having high energy, i.e., of a wavelength of about 300 nm to 500 nm, into emitted light of a long wavelength having lower energy, i.e., of a wavelength of about 600 nm to 1,100 nm.
  • the semiconductor nanocrystals may convert a short wavelength component of high energy of the incident light, i.e., of a wavelength of about 300 nm to 500 nm, into a long wavelength component having of lower energy, i.e., of a wavelength of about 600 nm to 1,100 nm.
  • the semiconductor nanocrystals according to the example embodiment of the present invention convert ultraviolet or blue light (wavelength of about 350 nm to 500 nm) into red light (wavelength of about 600 nm to 630 nm) and emits the red light.
  • the solar cell or a module thereof in accordance with the present invention increases light transmittance at a wavelength of 500 nm to 1,200 nm by 90% or more as compared to a conventional solar cell or a module thereof, and eventually increases the photoelectric conversion efficiency.
  • the solar cell or a module thereof in accordance with an embodiment of the present invention is characterized in that the number of photons of light emitted by the semiconductor nanocrystals is greater than the number of photons of light incident upon the semiconductor nanocrystals, the solar cell or the module thereof increases light absorption and increases an amount of current generated by the solar cells or the module thereof, thereby improving the photoelectric conversion efficiency.
  • the semiconductor nanocrystals may be dispersed in a layer, within which the semiconductor nanocrystals are to be contained, at a proper or predetermined rate.
  • an amount of the semiconductor nanocrystals may be about 1% to 10% by weight relative to the weight of the layer within which the semiconductor nanocrystals are to be contained.
  • an amount of the semiconductor nanocrystals that is contained in the layer may be measured so that a sufficient amount of the semiconductor nanocrystals are contained in the layer without excessively acting as a shield.
  • Such a measured amount of the semiconductor nanocrystals that is contained in the layer may be predetermined, and be about 1% to 90% by weight relative to the weight of the layer within which the semiconductor nanocrystals are to be contained, and preferably, but not necessarily, be about 1% to 10% by weight relative to the weight of the layer within which the semiconductor nanocrystals are to be contained.
  • the semiconductor nanocrystals may be crystals of at least one kind selected from the group consisting of group IV elements, group IIA-VIB compounds, group IIIA-VB compounds, group IIIB-VB compounds, or combinations thereof.
  • the semiconductor nanocrystals may be crystals of Si, Ge, MgS, ZnS, MgSe, ZnSe, AlP, GaP, AlAs, GaAs, CdS, CdSe, InP, InAs, GaSb, AlSb, ZnTe, CdTe and InSb, or mixed crystals including these elements or compounds.
  • the semiconductor nanocrystals are preferably, but not necessarily, crystals of AlP, GaP, Si, ZnSe, AlAs, GaAs, CdS, InP, ZnTe, AlSb, CdTe and CdSe, and more preferably, but not necessarily, crystals of ZnSe, CdSe, GaAs, CdS, InP, ZnTe and CdTe, which are direct-gap semiconductors, because they have high light emission efficiency.
  • the semiconductor nanocrystals may be dispersed in the layer within which the semiconductor nanocrystals are to be contained, thus being used to manufacture the solar cell or the module thereof.
  • the semiconductor nanocrystals are not limited to a specific form, but may have a nanoparticle form dispersed in the layer and preferably, but not necessarily, have a core-shell structure.
  • the cores and the shells of the semiconductor nanocrystals may be made of the same material or different materials selected from the above-described materials (elements or compounds).
  • the semiconductor nanocrystals having the above core-shell structure may be formed by coating surfaces of core particles containing CdSe (band gap: 1.74 eV) with shells made of a semiconductor material having a high band gap, such as ZnS (band gap: 3.8 eV).
  • core particles containing CdSe band gap: 1.74 eV
  • shells made of a semiconductor material having a high band gap such as ZnS (band gap: 3.8 eV).
  • ZnS band gap: 3.8 eV
  • the semiconductor nanocrystals having such a core-shell structure may improve a shielding effect of electrons generated from the core particles.
  • the semiconductor nanocrystals having the core-shell structure may be manufactured through a dispersion method of a known thin film deposition process.
  • the semiconductor nanocrystals having a CdSe core-ZnS shell structure may be manufactured by putting a precursor solution, in which diethyl zinc and trimethysilyl sulfide are mixed with TOP, into a TOPO solution, within which CdSe core particles are dispersed, and heated to a temperature of about 140° C.
  • the semiconductor nanocrystals are made of S or Se, the structure of the nanocrystals is easily broken by active ingredients, such as other unreacted monomers contained in the layer, within which the semiconductor nanocrystals are to be contained, or moisture. Therefore, in order to prevent or reduce such a problem, surface modification using a metal oxide, such as silica, or an organic compound may be carried out.
  • active ingredients such as other unreacted monomers contained in the layer, within which the semiconductor nanocrystals are to be contained, or moisture. Therefore, in order to prevent or reduce such a problem, surface modification using a metal oxide, such as silica, or an organic compound may be carried out.
  • the surfaces of the particles of the semiconductor nanocrystals may be modified or coated, for example, with long-chain alkyl groups, phosphate or resin, in order to improve dispersibility of the layer within which semiconductor nanocrystals are to be contained.
  • a transparent resin film may be made of a known material which maintains dispersion of the semiconductor nanocrystals, and be an organic resin film or a fluoride resin film.
  • the organic resin film may be made of a transparent resin (polymer), such as polymethyl methacrylate, polyacrylate, polycarbonate, polyvinyl alcohol, polyvinylpyrrolidone, hydroxyethyl cellulose, or carboxymethyl cellulose, or a combination thereof.
  • the organic resin film may be made of a monomer, an oligomer, or a polymer of polyvinyl chloride resin, melamine resin, phenolic resin, alkyd resin, epoxy resin, polyurethane resin, polyester resin, maleic resin, or polyamide resin, or a combination thereof.
  • These transparent resins may be heat curable. Further, one kind of these resins may be independently used, or plural kinds of these resins may be mixed and used.
  • the semiconductor nanocrystals may be dispersed within at least one layer selected from the at least one transparent member, the at least one anti-reflection layer, and the filling layer through a spin coating method or a spray coating method.
  • dispersion of the semiconductor nanocrystals into the at least one selected layer is not limited to the above method, but may employ any one of known nanoparticle dispersion methods.
  • particles of semiconductor nanocrystals or the manufactured semiconductor nanocrystals having the core-shell structure may be mixed with a material of the layer within which the semiconductor nanocrystals are to be contained, a proper solvent is added to the mixture, and the mixture is agitated through a milling method of an ultrasonic dispersion method, thereby manufacturing a dispersion solution. Thereafter, the manufactured dispersion solution is applied to a solar cell structure and then dried, thereby forming the layer within which the semiconductor nanocrystals are contained.
  • a known solution impregnation method, spraying method, or method using a roller cutter, a land cutter, or a spinner may be used.
  • the layer within which the semiconductor nanocrystals are contained may be formed on the solar cells by patterning.
  • the pattern of the layer may be formed by photolithography or various printing methods using the above-manufactured dispersion solution.

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103903864A (zh) * 2012-12-27 2014-07-02 中国科学院上海硅酸盐研究所 一种染料敏化太阳能电池
US9153714B2 (en) 2012-12-05 2015-10-06 Electronics And Telecommunications Research Institute Photoelectric conversion device
CN115566081A (zh) * 2022-11-11 2023-01-03 宁波长阳科技股份有限公司 一种光伏组件及其制备方法与太阳能电池
CN117342543A (zh) * 2023-10-07 2024-01-05 中北大学 碳基光转换纳米材料及其晶硅太阳能电池用转光胶膜、转光背板材料

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2979434B1 (fr) * 2011-08-24 2013-09-27 Commissariat Energie Atomique Procede de realisation d'un reflecteur optique a nanocristaux de semi-conducteur
KR101373250B1 (ko) * 2012-10-25 2014-03-12 전북대학교산학협력단 박막 태양전지 및 그 제조 방법
KR102208083B1 (ko) * 2013-10-04 2021-01-28 한국전자통신연구원 태양전지 및 그를 포함하는 태양전지 모듈
CN104332514B (zh) * 2014-07-18 2016-10-05 河南科技大学 一种纳米晶量子点薄膜、使用该薄膜改性的晶体硅太阳能电池及其制备方法
KR101682133B1 (ko) 2015-11-09 2016-12-02 한국과학기술연구원 나노패턴 내에 양자점이 임베디드된 광학 필름, 이의 제조방법 및 이를 이용한 태양전지
CN105895726A (zh) * 2016-05-11 2016-08-24 徐翔星 含钙钛矿纳米晶下转换层的太阳能电池及其制备方法
CN108511605A (zh) * 2018-03-23 2018-09-07 北京理工大学 光伏组件及其制备方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130379A (en) * 1995-07-19 2000-10-10 Canon Kabushiki Kaisha Protective material for a semiconductor element, a semiconductor element provided with said protective material, and a semiconductor device provided with said semiconductor element
US20060068154A1 (en) * 2004-01-15 2006-03-30 Nanosys, Inc. Nanocrystal doped matrixes
US20060169971A1 (en) * 2005-02-03 2006-08-03 Kyung-Sang Cho Energy conversion film and quantum dot film comprising quantum dot compound, energy conversion layer including the quantum dot film, and solar cell including the energy conversion layer
US20060219287A1 (en) * 2005-03-04 2006-10-05 Hansder Engineering Co., Ltd. Sensitized semiconductor solar cell
WO2008072828A1 (en) * 2006-12-13 2008-06-19 Lg Electronics Inc. Solar cell
US20080216894A1 (en) * 2007-01-08 2008-09-11 Plextronics, Inc. Quantum dot photovoltaic device
US20080236667A1 (en) * 2007-03-09 2008-10-02 Wei-Hung Lo Photovoltaic cell, enhanced spectrum conversion film, preparation of enhanced spectrum conversion film
US20090050201A1 (en) * 2007-07-17 2009-02-26 The Research Foundation Of State University Of New York Solar cell
US20090095341A1 (en) * 2007-10-12 2009-04-16 Ultradots, Inc. Solar Modules With Enhanced Efficiencies Via Use of Spectral Concentrators
US20100024880A1 (en) * 2008-08-01 2010-02-04 Seongeun Lee Solar cell and method for manufacturing the same
US20100065117A1 (en) * 2008-09-16 2010-03-18 Jinsung Kim Solar cell and texturing method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03101170A (ja) * 1989-09-13 1991-04-25 Sharp Corp 太陽電池の製造方法
DE69224965T2 (de) * 1991-06-11 1998-10-29 Ase Americas Inc Verbesserte solarzelle und verfahren zu ihrer herstellung
JPH05129277A (ja) * 1991-10-31 1993-05-25 Iwasaki Electric Co Ltd 多層反射防止膜
AU764832B2 (en) * 1999-05-31 2003-09-04 Kaneka Corporation Solar battery module
US7173179B2 (en) * 2002-07-16 2007-02-06 The Board Of Trustees Of The University Of Arkansas Solar co-generator
US8088475B2 (en) * 2004-03-03 2012-01-03 Hitachi, Ltd. Anti-reflecting membrane, and display apparatus, optical storage medium and solar energy converting device having the same, and production method of the membrane
US8153282B2 (en) * 2005-11-22 2012-04-10 Guardian Industries Corp. Solar cell with antireflective coating with graded layer including mixture of titanium oxide and silicon oxide
US20070256734A1 (en) * 2006-05-08 2007-11-08 United Solar Ovonic Llc Stabilized photovoltaic device and methods for its manufacture
CN201149872Y (zh) * 2007-12-17 2008-11-12 天津理工大学 利用近红外光提高转换效率的太阳能电池组件
EP2105968A1 (en) * 2008-03-27 2009-09-30 Atomic Energy Council - Institute of Nuclear Energy Research Method for making a full-spectrum solar cell with an anti-reflection layer doped with silicon quantum dots
CN101728446B (zh) * 2008-10-14 2012-07-18 新日光能源科技股份有限公司 光伏打电池及其制造方法
TWI420679B (zh) * 2008-12-31 2013-12-21 Mosel Vitelic Inc 太陽能電池
CN101593783A (zh) * 2009-02-23 2009-12-02 江苏激蓝科技有限公司 一种高效率太阳能光电转换装置及制造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130379A (en) * 1995-07-19 2000-10-10 Canon Kabushiki Kaisha Protective material for a semiconductor element, a semiconductor element provided with said protective material, and a semiconductor device provided with said semiconductor element
US20060068154A1 (en) * 2004-01-15 2006-03-30 Nanosys, Inc. Nanocrystal doped matrixes
US20060169971A1 (en) * 2005-02-03 2006-08-03 Kyung-Sang Cho Energy conversion film and quantum dot film comprising quantum dot compound, energy conversion layer including the quantum dot film, and solar cell including the energy conversion layer
US20060219287A1 (en) * 2005-03-04 2006-10-05 Hansder Engineering Co., Ltd. Sensitized semiconductor solar cell
WO2008072828A1 (en) * 2006-12-13 2008-06-19 Lg Electronics Inc. Solar cell
US20080216894A1 (en) * 2007-01-08 2008-09-11 Plextronics, Inc. Quantum dot photovoltaic device
US20080236667A1 (en) * 2007-03-09 2008-10-02 Wei-Hung Lo Photovoltaic cell, enhanced spectrum conversion film, preparation of enhanced spectrum conversion film
US20090050201A1 (en) * 2007-07-17 2009-02-26 The Research Foundation Of State University Of New York Solar cell
US20090095341A1 (en) * 2007-10-12 2009-04-16 Ultradots, Inc. Solar Modules With Enhanced Efficiencies Via Use of Spectral Concentrators
US20100024880A1 (en) * 2008-08-01 2010-02-04 Seongeun Lee Solar cell and method for manufacturing the same
US20100065117A1 (en) * 2008-09-16 2010-03-18 Jinsung Kim Solar cell and texturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9153714B2 (en) 2012-12-05 2015-10-06 Electronics And Telecommunications Research Institute Photoelectric conversion device
CN103903864A (zh) * 2012-12-27 2014-07-02 中国科学院上海硅酸盐研究所 一种染料敏化太阳能电池
CN115566081A (zh) * 2022-11-11 2023-01-03 宁波长阳科技股份有限公司 一种光伏组件及其制备方法与太阳能电池
CN117342543A (zh) * 2023-10-07 2024-01-05 中北大学 碳基光转换纳米材料及其晶硅太阳能电池用转光胶膜、转光背板材料

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JP2011129925A (ja) 2011-06-30
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EP2343740A1 (en) 2011-07-13
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