US20100256817A1 - Method of adjusting laser beam pitch by controlling movement angles of grid image and stage - Google Patents

Method of adjusting laser beam pitch by controlling movement angles of grid image and stage Download PDF

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Publication number
US20100256817A1
US20100256817A1 US12/460,653 US46065309A US2010256817A1 US 20100256817 A1 US20100256817 A1 US 20100256817A1 US 46065309 A US46065309 A US 46065309A US 2010256817 A1 US2010256817 A1 US 2010256817A1
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US
United States
Prior art keywords
stage
grid image
rotation angle
image
exposure
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Abandoned
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US12/460,653
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English (en)
Inventor
Jong Su Kim
Dong Woo Kim
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Protec Co Ltd Korea
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Protec Co Ltd Korea
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Assigned to PROTEC CO., LTD. reassignment PROTEC CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KIM, DONG WOO, KIM, JONG SU
Publication of US20100256817A1 publication Critical patent/US20100256817A1/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control

Definitions

  • the present invention relates to a method of adjusting a laser beam pitch by controlling the movement angles of a grid image and a stage.
  • the present invention relates to a method of adjusting a laser beam pitch by controlling the movement angles of a grid image and a stage, which adjusts a pitch between laser beams radiated onto the exposed surface of a board (PCB) through a Digital Micromirror Device (DMD) module by rotating a grid image, that is, a mask image, together with a stage supporting the board, thus realizing high-resolution Line Edge Roughness (LER).
  • PCB printed Micromirror Device
  • DMD Digital Micromirror Device
  • PCB Printed Circuit Board
  • the problem of a conventional mask exposure system lies in the fact that it is difficult to perform high-resolution exposure due to an increase in mask production costs and management costs when a high-resolution micro-circuit pattern is exposed.
  • maskless processing technologies for realizing the high resolution required for the implementation of hyperfine circuit line width and reducing the number of processes have recently been focused on.
  • an exposure system provided with a Digital Micromirror Device (DMD) has been developed.
  • DMD Digital Micromirror Device
  • Such an exposure system uses a principle by which a plurality of micromirrors transmits some of the beams, incident thereon at a predetermined angle, at a desired angle, and transmits the remaining beams at another angle, and thus a single screen is created using only necessary beams.
  • beams emitted from a UV light source and on/off modulated by a DMD module have rectangular shapes which are the shapes of respective micromirrors constituting the DMD module. Because of this, when the image of a pattern is implemented, rectangular beams are roughly processed due to the characteristics of the rectangular shapes.
  • a mask or the like is disposed between a first projection lens system and a second projection lens system and configured to change rectangular beams into circular beams and radiate the circular beams, thus assisting the edge of a pattern to be more softly processed when the image of the pattern is implemented.
  • an object of the present invention is to realize high-resolution roughness by adjusting the pitch between laser beams radiated onto the exposed surface of a board through a DMD module by rotating a grid image, that is, a mask image, together with a stage supporting the board.
  • the present invention provides a method of adjusting a laser beam pitch by controlling movement angles of a grid image and a stage, the method generating the grid image required to expose a board on the stage by selectively turning on or off a plurality of Digital Micromirror Devices (DMDs) constituting a DMD module through an algorithm, comprising defining a factor K for repeated patterns based on exposure parameter data; obtaining a rotation angle ⁇ through computational processing; moving the stage by the obtained rotation angle ⁇ in a diagonal direction; and generating a grid image rotated by the obtained rotation angle ⁇ .
  • DMDs Digital Micromirror Devices
  • the rotation angle ⁇ may be a rotation angle by which the stage and the grid image are rotated with respect to diagonal lines thereof.
  • the stage and the grid image may be rotated by a same angle ⁇ .
  • the generation of the grid image having the rotation angle ⁇ from a normal grid image may be performed using an algorithm for turning on/off the plurality of DMDs constituting the DMD module.
  • FIG. 1 is a diagram showing a process for performing exposure while moving a stage in the X and Y axis directions;
  • FIG. 2 is a diagram showing a process for performing exposure while moving a stage, rotated by a certain angle, in the X and Y axis directions;
  • FIG. 3 is a diagram showing a grid image and an exposed surface, formed by performing exposure while moving only a stage in a diagonal direction by a certain angle;
  • FIG. 4 is a diagram showing a grid image and an exposed surface, formed by performing exposure while moving a stage in a diagonal direction by a certain angle and rotating a grid image by a certain angle;
  • FIG. 5 is a diagram showing the relationship between a DMD module and the rotation angles of a grid image.
  • FIG. 1 is a diagram showing a process for performing exposure while moving a stage in the X and Y axis directions
  • FIG. 2 is a diagram showing a process for performing exposure while moving a stage, rotated by a certain angle, in a diagonal direction by simultaneously moving the stage in the X and Y axis directions
  • FIG. 3 is a diagram showing a grid image and an exposed surface, formed by performing exposure while moving only a stage in a diagonal direction by a certain angle;
  • FIG. 4 is a diagram showing a grid image and an exposed surface, formed by performing exposure while moving a stage in a diagonal direction by a certain angle and rotating a grid image by a certain angle
  • FIG. 5 is a diagram showing the relationship between a DMD module and the rotation angles of a grid image.
  • an exposure system for exposing a board or the like may include a light source, a diffractive optical device, a Fourier transform lens, DMD modules, a mirror, first and second optical lens systems, a beam shift device, a stage, etc.
  • FIGS. 1 and 2 illustrate a process for exposing a board on a stage while moving the stage in the X and Y axis directions to realize high-resolution Line Edge Roughness (LER) by adjusting the pitch between laser beams radiated onto the exposed surface of the board.
  • LER Line Edge Roughness
  • exposure is performed in such a way as to radiate laser beams onto the exposed surface of the board on the stage while moving the stage in the X and Y axis directions after the DMD modules are rotated by a certain angle, thus realizing high-resolution LER by adjusting the pitch between the laser beams.
  • exposure is diagonally performed in such a way as to radiate laser beams onto the exposed surface of the board on the stage while simultaneously moving the stage in the X and Y axis directions after the stage has been rotated by a predetermined angle, thus realizing high-resolution LER by adjusting the pitch between the laser beams.
  • high-resolution LER is partially implemented by adjusting the pitch between laser beams, but an exposed image is distorted into the shape of a parallelogram, and thus the original image is exposed in a shape different from that of the original image.
  • the DMD module 10 and the stage 14 are driven under the control of a controller, including the DMD controller.
  • the DMD controller defines a factor K for repeated patterns on the basis of exposure parameter data, obtains a rotation angle ⁇ through computational processing, moves the stage 14 in a diagonal direction by the obtained rotation angle ⁇ , and generates the grid image 12 rotated by the rotation angle ⁇ .
  • the rotation angle ⁇ denotes a rotation angle by which the stage 10 and the grid image 12 are rotated with respect to the diagonal lines thereof.
  • the stage 10 and the grid image 12 it is preferable for the stage 10 and the grid image 12 to have the same angle ⁇ .
  • the DMD controller generates a grid image having a rotation angle ⁇ from the normal grid image by turning on or off a plurality of DMDs, constituting the DMD module, through the use of an algorithm included in the DMD controller.
  • FIG. 5 illustrates the relationship between the DMD module 10 and the rotation angle ⁇ of the grid image 12 , wherein the rotation angle ⁇ is calculated using the algorithm included in either the DMD controller or a controller including the DMD controller.
  • the lateral length and vertical length of the DMD module, memory grid size (S, T), scan step distance, and rotation angle ⁇ can be obtained by the following equations when the number of vertical DMDs (M) constituting the DMD module 10 is 4, the number of lateral DMDs (N) is 6, the distance between the respective DMDs is 14 ⁇ m, a factor K for repeated patterns is 2, the size of a laser beam is 10 ⁇ m, and the size of a DMD, that is, a micromirror, is 13 ⁇ m.
  • the lateral length of the DMD module is (M ⁇ 1)*D.
  • the lateral length of the DMD module is (4 ⁇ 1)*14, that is, 42 ⁇ m.
  • the vertical length of the DMD module is (N ⁇ 1)*D.
  • the vertical length of the DMD module is (6 ⁇ 1)*14, that is, 70 ⁇ m.
  • the size S of the memory grid is N+(M ⁇ 1)*M/K, and is then 4+(6 ⁇ 1)*6/2, that is, 19.
  • the size T of the memory grid is M+(N ⁇ 1)*M/K, and is then 6+(4 ⁇ 1)*6/2, that is, 15.
  • the rotation angle ⁇ is 18.435°.
  • Table 1 shows the rotation angles ⁇ and memory grid sizes S and T, obtained by the DMD controller when the factors for repeated patterns are 1, 2, 3 and 6, respectively.
  • the present invention is advantageous in that the pitch between laser beams radiated onto the exposed surface of a board through a DMD module is adjusted by rotating a grid image, that is, a mask image, together with a stage supporting the board, thus realizing high-resolution Line Edge Roughness (LER).
  • LER Line Edge Roughness

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
US12/460,653 2009-04-06 2009-07-21 Method of adjusting laser beam pitch by controlling movement angles of grid image and stage Abandoned US20100256817A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0029334 2009-04-06
KR1020090029334A KR20100110996A (ko) 2009-04-06 2009-04-06 그리드 이미지와 스테이지의 이동 각도 조절에 의한 레이저빔 간 피치조절 방법

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109656101A (zh) * 2018-12-07 2019-04-19 东莞市多普技术研发有限公司 一种数字微镜倾斜扫描的数据处理方法
US11392038B2 (en) * 2018-07-31 2022-07-19 Samsung Electronics Co., Ltd. Maskless exposure apparatus and method, and manufacturing method of a semiconductor device including the maskless exposure method
JP7562001B2 (ja) 2021-01-07 2024-10-04 江蘇迪盛智能科技有限公司 リソグラフィシステムの走査方法及びリソグラフィシステム

Citations (9)

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Publication number Priority date Publication date Assignee Title
US5870176A (en) * 1996-06-19 1999-02-09 Sandia Corporation Maskless lithography
US20010045690A1 (en) * 2000-05-25 2001-11-29 Brandinger Jay J. Maskless laser beam patterning device and apparatus for ablation of multilayered structures with continuous monitoring of ablation
US6717106B2 (en) * 2001-09-10 2004-04-06 Fuji Photo Film Co., Ltd. Laser sintering apparatus
US20050139786A1 (en) * 2003-12-26 2005-06-30 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and method for manufacturing crystalline semiconductor film
US20060027538A1 (en) * 2003-02-20 2006-02-09 Peter Ekberg Pattern generation methods and apparatuses
US20060237404A1 (en) * 2002-06-07 2006-10-26 Fuji Photo Film Co., Ltd. Laser annealer and laser thin-film forming apparatus
US7521651B2 (en) * 2003-09-12 2009-04-21 Orbotech Ltd Multiple beam micro-machining system and method
US7580171B2 (en) * 2007-02-27 2009-08-25 Till I.D. Gmbh Device for confocal illumination of a specimen
US20100140237A1 (en) * 2008-12-08 2010-06-10 Electro Scientific Industries, Inc. Controlling dynamic and thermal loads on laser beam positioning system to achieve high-throughput laser processing of workpiece features

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5870176A (en) * 1996-06-19 1999-02-09 Sandia Corporation Maskless lithography
US20010045690A1 (en) * 2000-05-25 2001-11-29 Brandinger Jay J. Maskless laser beam patterning device and apparatus for ablation of multilayered structures with continuous monitoring of ablation
US6717106B2 (en) * 2001-09-10 2004-04-06 Fuji Photo Film Co., Ltd. Laser sintering apparatus
US20060237404A1 (en) * 2002-06-07 2006-10-26 Fuji Photo Film Co., Ltd. Laser annealer and laser thin-film forming apparatus
US20060027538A1 (en) * 2003-02-20 2006-02-09 Peter Ekberg Pattern generation methods and apparatuses
US7521651B2 (en) * 2003-09-12 2009-04-21 Orbotech Ltd Multiple beam micro-machining system and method
US20050139786A1 (en) * 2003-12-26 2005-06-30 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and method for manufacturing crystalline semiconductor film
US7580171B2 (en) * 2007-02-27 2009-08-25 Till I.D. Gmbh Device for confocal illumination of a specimen
US20100140237A1 (en) * 2008-12-08 2010-06-10 Electro Scientific Industries, Inc. Controlling dynamic and thermal loads on laser beam positioning system to achieve high-throughput laser processing of workpiece features

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11392038B2 (en) * 2018-07-31 2022-07-19 Samsung Electronics Co., Ltd. Maskless exposure apparatus and method, and manufacturing method of a semiconductor device including the maskless exposure method
CN109656101A (zh) * 2018-12-07 2019-04-19 东莞市多普技术研发有限公司 一种数字微镜倾斜扫描的数据处理方法
JP7562001B2 (ja) 2021-01-07 2024-10-04 江蘇迪盛智能科技有限公司 リソグラフィシステムの走査方法及びリソグラフィシステム

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Owner name: PROTEC CO., LTD., KOREA, REPUBLIC OF

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