US20100163187A1 - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
US20100163187A1
US20100163187A1 US12/392,237 US39223709A US2010163187A1 US 20100163187 A1 US20100163187 A1 US 20100163187A1 US 39223709 A US39223709 A US 39223709A US 2010163187 A1 US2010163187 A1 US 2010163187A1
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Prior art keywords
sample
gas
injection holes
outer diameter
gas injection
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Abandoned
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US12/392,237
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English (en)
Inventor
Kenetsu Yokogawa
Takamasa ICHINO
Kazuyuki Hirozane
Tadamitsu Kanekiyo
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Assigned to HITACHI HIGH-TECHNOLOGIES CORPORATION reassignment HITACHI HIGH-TECHNOLOGIES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HIROZANE, KAZUYUKI, ICHINO, TAKAMASA, KANEKIYO, TADAMITSU, YOKOGAWA, KENETSU
Publication of US20100163187A1 publication Critical patent/US20100163187A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Definitions

  • the present invention relates to a plasma processing apparatus to manufacture semiconductor devices, and in particularly to a dry etching technique to etch semiconductor materials, such as a silicon, a silicon dioxide film, etc., along a mask pattern shape formed by a resist material etc.
  • the dry etching is a semiconductor micro-fabrication method in which a processing gas is introduced into a vacuum chamber having a vacuum decompression unit, the processing gas is turned into a plasma by an electromagnetic wave to apply it to a sample to be processed, a surface of the sample other than a mask portion is etched to obtain a desirable shape.
  • a processing uniformity on an in-plane sample is affected by a plasma distribution, a temperature distribution on the in-plane of the sample, a supplied gas composition and flow rate distribution, etc.
  • the processing gas is supplied from a shower plate disposed so as to face the sample, and a gas supply distribution of the gas supplied from the shower plate has an effect on a process speed, a process shape, etc., since a distance between the sample and the shower plate is relatively short.
  • JP-A-2006-41088 (corresponding to U.S. patent publication Nos. 2006/16559 and 2007/186972) has proposed a plasma processing apparatus which controls independently the gas composition and flow rate at a center portion and a periphery portion of the shower plate, enhancing the in-plane uniformity of the sample, such as a process shape.
  • FIG. 7 shows a shower plate as related art.
  • the shower plate has been designed that a plurality of gas injection holes 2 are uniformly disposed on a shower plate gas supply surface 5 , such that the gas composition and flow rate injected from every hole should be uniformed and a gas supply condition applied per unit area of the sample is also uniformed, basically.
  • the gas supply amount is broadly controlled at the center portion and periphery portion of the in-plane sample to cancel an effect caused by a reactive product etc., realizing the uniformity of the processed shape.
  • the gas composition and flow rate injected from every hole are different in the two domains: the center portion and the periphery portion, but the gas having the same gas composition and flow rate is injected from the holes present in the respective domains.
  • FIG. 3 shows a relation of an aspect ratio (D/L) and a relative molecule flux, where a wafer (sample) diameter is D(300 mm), and a distance from the wafer to the shower plate is L.
  • the relative amount of the gas molecules reached to the wafer surface is relatively deficient at the wafer periphery portion when the aspect ratio becomes large. That is, it has become clear that the relative deficiency of the gas supply amount at the edge portion of the wafer occurs from a condition where the distance between the wafer and shower plate is equal to or less than 300 mm, where the aspect ratio is equal to or greater than 1, or the wafer diameter is 300 mm ( ⁇ 300 mm).
  • FIG. 4 shows a relation between a gas injection domain diameter and the relative molecule flux.
  • the gas injection hole domain diameter requires about 1.5 times the wafer diameter D, that is, the gas injection hole domain diameter is set substantially to equal to or greater than 450 mm ( ⁇ 450 mm).
  • An object of the invention is to solve the gas supply deficiency occurred at the periphery portion of the sample when the gas is supplied from the shower plate, and to provide a plasma processing apparatus capable of enhancing the in-plane uniformity of processing accuracy on the sample.
  • the invention is to provide a plasma processing apparatus having both enhancement of the in-plane uniformity of the sample in the processing characteristic and cost reduction of the consumable supply by restraining the expansion of the shower plate diameter in minimum and improving the gas supply uniformity to the in-plane sample.
  • a plasma processing apparatus for applying a surface processing to a sample, includes a vacuum chamber, a sample table to place the sample in the vacuum chamber, and a gas supply unit faced to the sample table and having a gas supply surface with a diameter larger than that of the sample, in which gas injection holes each having identical diameter are provided concentrically on the gas supply surface of the gas supply unit, and a hole number density of the gas injection holes present in an outer diameter position of the sample or in an outside of the outer diameter position is made higher than that of the gas injection holes present inside the outer diameter position of the sample.
  • a plasma processing apparatus for applying a surface processing to a sample, includes a vacuum chamber, a sample table to place the sample in the vacuum chamber, and a gas supply unit faced to the sample table and having a gas supply surface with a diameter larger than that of the sample, in which gas injection holes are provided concentrically on the gas supply surface of the gas supply unit, and a diameter of the gas injection holes present in an outer diameter position of the sample or in an outside from the outer diameter position is larger than that of the gas injection holes present inside from the outer diameter position of the sample.
  • a uniformed gas supply distribution is given to the entire surface of the sample without making the apparatus large and also making the shower plate large as a change part, realizing the uniformity of processing rate and processing shape of the sample.
  • FIG. 1 is a section view of a plasma processing apparatus in the invention
  • FIG. 2 is a schematic view of a shower plate in a first embodiment of the invention
  • FIG. 3 is an explanatory diagram of a relative molecule flux distribution on a wafer surface in a condition obtained from a ratio (D/L) where a wafer diameter D and a distance L between the wafer and the shower plate;
  • FIG. 4 is a diagram showing an effect of a gas injection domain diameter in relation to the wafer diameter
  • FIG. 5 is a diagram for explaining an advantage of the invention.
  • FIG. 6 is a diagram for explaining an advantage of the invention.
  • FIG. 7 is a schematic view of a related shower plate
  • FIG. 8 is a diagram showing the relative molecule flux on the wafer surface when a gas-injection-hole number density is made increased at 280 mm ( ⁇ 280 mm) and its vicinity of the shower plate;
  • FIG. 9 is a diagram showing the relative molecule flux on the wafer surface when the gas-injection-hole number density is made increased at 290 mm ( ⁇ 290 mm) and its vicinity of the shower plate;
  • FIG. 10 is a diagram showing the relative molecule flux on the wafer surface when the gas-injection-hole number density is made increased at 300 mm ( ⁇ 300 mm) and its vicinity of the shower plate;
  • FIG. 11 is a diagram showing the relative molecule flux on the wafer surface when the gas-injection-hole number density is made increased at 320 mm ( ⁇ 320 mm) and its vicinity of the shower plate;
  • FIG. 12 is a diagram showing the relative molecule flux on the wafer surface when the gas-injection-hole number density is made increased at 330 mm ( ⁇ 330 mm) and its vicinity of the shower plate;
  • FIG. 13 is a diagram showing the relative molecule flux on the wafer surface when the gas-injection-hole number density is made increased at 340 mm ( ⁇ 340 mm) and its vicinity of the shower plate;
  • FIG. 14 is a diagram showing the relative molecule flux on the wafer surface when the gas-injection-hole number density is made increased at 360 mm ( ⁇ 360 mm) and its vicinity of the shower plate;
  • FIG. 15 is a schematic view of the shower plate in a second embodiment of the invention.
  • FIG. 1 and FIG. 2 A first embodiment of the invention will be described with use of FIG. 1 and FIG. 2 .
  • FIG. 1 is shows a section view of a plasma processing apparatus in one embodiment of the invention.
  • the plasma processing apparatus includes an electrostatic chucking function built-in electrode (sample table) 15 for placing a sample 7 in a vacuum chamber 24 and a shower plate (gas supply unit) 1 faced to the sample table 15 .
  • a 200 MHz high-frequency power is supplied from a discharge-use high-frequency power source 13 to a conductor-type antenna 12 incorporated with a plate 8 and a dispersion plate 11 to turn a gas supplied from the shower plate 1 into a plasma in a discharge space 14 .
  • a 4 MHz high-frequency voltage is applied to the sample 7 from a high-frequency power source 16 via the electrostatic chucking function built-in electrode 15 to accelerate ions in the plasma and to be incident to the surface of the sample 7 .
  • the 4 MHz high-frequency voltage is also applied independently to the antenna 12 from a high-frequency power source 17 by superimposing with a discharge-use 200 MHz high-frequency power, so that an ion energy in the plasma incident to the surface of shower plate 1 is controlled independently from a plasma generation and a bias condition of the sample.
  • the antenna 12 and electrostatic chucking function built-in electrode 15 are also controlled respectively in temperature by insulation type liquid cooling circulating functions 21 , 22 .
  • the shower plate 1 is formed by silicon.
  • the plate 8 is disposed on an upper stage of the shower plate 1 , and the plate 8 has holes matched with the same position of gas injection holes 2 formed on the shower plate 1 and slightly larger than the gas injection holes 2 in diameter.
  • the dispersion plate 11 is further disposed on the upper stage of the plate 8 , and the dispersion plate 11 forms a gas dispersion layer 10 to disperse the gas supplied from a gas supply portion 9 .
  • the gas supply portion 9 is provided independently for an inside domain and an outside domain of the sample 7 , and a flow rate and a gas composition can be controlled independently at the inside and outside domains of the sample 7 .
  • the inside domain and outside domain are also divided by a barrier in such that a form domain area of the respective gas injection holes 2 in the inside and outside domains is substantially equal.
  • the apparatus will be described with two domains: the inside domain and outside domain, and the domain may not be divided, but also divided into more than three domains.
  • reference numerals 18 , 19 and 20 denote an automatic matching device
  • 6 denotes a shower plate fixing screw hole
  • 23 denotes a silicon-made focus ring
  • 25 denotes an insulation material
  • 27 denotes an earth plate.
  • a silicon wafer of 300 mm in diameter is used for the sample.
  • the gas injection holes 2 formed on the shower plate 1 are formed within a range of 314 mm ( ⁇ 314 mm) in diameter, the inside of which is the inside domain of 200 mm ( ⁇ 200 mm), and the outside of which is the outside domain.
  • the gas dispersion layer 10 is also formed independently for the inside and outside domains such that the gas is dispersed uniformly in the respective inside and outside domains.
  • FIG. 2 shows a layout of the gas injection holes 2 on the surface of shower plate 1 , in which a diameter of the gas injection hole 2 is 0.5 mm, and a thickness of the domain where the gas injection holes 2 are formed on the shower plate 1 is 10 mm.
  • the diameter of the gas injection holes 2 formed on a shower plate gas supply surface 5 is all the same.
  • the gas injection holes 2 are also formed in concentricity and in an equal interval (10 mm pitch) from a shower plate center 3 .
  • the number of gas injection holes formed on the circumferences is substantially proportional to the circumference from the center to the periphery and its vicinity. Therefore, the number of gas injection holes per unit area on the shower plate 1 is substantially the same in the layout, from the center to the periphery and its vicinity.
  • the diameter of shower plate gas supply surface 5 is made larger than that of the sample 7 .
  • the total number of gas injection holes of the outside domain in the periphery domain is about twice that of the inside domain. Therefore, the gas is flown into the outside domain by the flow rate having about twice that of the inside domain, so that the gas flow rate injected from every gas injection hole becomes equal at both the inside and outside domains.
  • the gas injected from the gas injection holes 2 is substantially the same in the flow rate and gas composition at the inside and outside domains of the sample 7 .
  • a gas condition (flow rate and composition) distribution produced by supplying the gas to the surface of the sample 7 depends on a density of number of the gas injection holes 2 .
  • the apparatus will be described with a case where the gas flow rate injected from every gas injection hole 2 is equal.
  • it is not necessarily to make the gas flow rate equal, injected from every gas injection hole 2 since an oxygen flow rate is sometimes changed at the inside and outside domains, for example, for a purpose of correcting a deposition distribution caused by a reactive product.
  • a hole number density per unit length on two outermost circumferences formed with the gas injection holes 2 is set to about twice that of the other circumferences.
  • a pitch between the gas injection holes 2 formed on the other circumferences is 10 mm, while the pitch between the holes 2 formed on the two outermost circumferences is 7 mm.
  • the hole number density of the gas injection holes 2 facing to the edge portion of the sample 7 increases by about 2.85 times (density (twice) of circumferential direction ⁇ density (10 mm/7 mm) of diametrical direction), compared with the other domains.
  • a uniformity gas supply is carried out at the inside domain of the sample 7 since the gas injection holes 2 are disposed on the inside domain with an equal density, however, a large volume gas, much more than the other domains, is supplied to the edge portion of the sample 7 at the outside domain since the density of the gas injection holes 2 formed on the edge portion of the sample 7 is high.
  • FIG. 5 shows a calculation result of the relative molecule flux at the wafer edge portion in the case of the shower plate in the invention and the shower plate as related art.
  • a gas supply amount deficiency is made up for the wafer edge portion and its vicinity to supply uniformly the gas to the entire wafer surface, in the case of the shower plate 1 of the invention.
  • the gas supply amount is relatively short at the wafer edge portion and its vicinity, compared with the center portion of the wafer, in the case of the related shower plate.
  • an exhaust velocity becomes fast at a long circumference wafer edge portion, compared with the center portion of the wafer, when the gas supplied from the shower plate 1 is exhausted from the periphery of the wafer.
  • the gas injected from the periphery portion reaches to a center domain as isotropically diffused, however, it is assumed that there is no gas supply from the outside other than the outermost circumference formed with the gas injection holes 2 .
  • the shower plate 1 in the invention it is possible that the gas is supplied uniformly, therefore, it has become clear that the shower plate 1 is useful to make an etching characteristic uniformed.
  • etching mechanism a silicon dioxide film etching by using a phlorocabon-based gas etc.
  • the etching characteristic depends largely on the supplied gas flow rate rather than a gas pressure
  • a difference of an etching rate and etching shape can be restrained within the in-plane wafer.
  • FIG. 6 shows an etching rate distribution of a TEOS film in the case of the shower plate 1 in the invention and the shower plate as related art.
  • the etching rate at the wafer edge portion is lowered, and an etching rate uniformity is as much as 8%.
  • the shower plate 1 of the invention no effect is given to the etching rate at a wafer center domain, the etching rate at the wafer edge portion is increased, and the etching rate uniformity is improved to as much as 3%.
  • FIG. 8 shows a calculation result of the relative molecule flux on the wafer surface in the case where the gas-injection-hole number density is increased at 280 mm ( ⁇ 280 mm) and its vicinity of the shower plate 1 .
  • FIG. 9 shows a calculation result of the relative molecule flux on the wafer surface in the case where the gas-injection-hole number density is increased at 290 mm ( ⁇ 290 mm) and its vicinity of the shower plate 1 .
  • FIG. 10 shows a calculation result of the relative molecule flux on the wafer surface in the case where the gas-injection-hole number density is increased at 300 mm ( ⁇ 300 mm) and its vicinity of the shower plate 1 .
  • FIG. 11 shows a calculation result of the relative molecule flux on the wafer surface in the case where the gas-injection-hole number density is increased at 320 mm ( ⁇ 320 mm) and its vicinity of the shower plate 1 .
  • FIG. 12 shows a calculation result of the relative molecule flux on the wafer surface in the case where the gas-injection-hole number density is increased at 330 mm ( ⁇ 330 mm) and its vicinity of the shower plate 1 .
  • FIG. 13 shows a calculation result of the relative molecule flux on the wafer surface in the case where the gas-injection-hole number density is increased at 340 mm ( ⁇ 340 mm) and its vicinity of the shower plate 1 .
  • FIG. 14 shows a calculation result of the relative molecule flux on the wafer surface in the case where the gas-injection-hole number density is increased at 360 mm ( ⁇ 360 mm) and its vicinity of the shower plate 1 .
  • the gas-injection-hole number density is increased to thereby increase the gas supply amount at the wafer edge portion in the inside domain inside the wafer diameter or the wafer outer diameter position. This causes the gas supply amount to increase the inside, but it has become clear that the gas supply distribution is slightly improved.
  • the gas-injection-hole number density is increased to increase the gas supply amount at the wafer edge portion in the domain of the wafer diameter, that is, the wafer outer diameter position, or the domain outside the wafer outer diameter position. It has become clear that the uniformity gas supply distribution is obtained in the wafer domain.
  • the increase of the gas-injection-hole number density varies in response to the processing objects and processing conditions.
  • the gas-injection-hole number density increases in the range of 1.5 to 4 times to thereby optimize the uniformity of the etching characteristic, and the gas consumed amount can be restrained.
  • FIG. 15 A second embodiment of the invention will be described with use of FIG. 15 .
  • FIG. 15 is a schematic diagram showing a shower plate 1 in the second embodiment of the invention.
  • each diameter of gas injection holes 27 faced to the wafer edge portion and formed on the periphery portion of the shower plate 1 is 1.3 times that of the other gas injection holes 2 , that is, the hole diameter at the periphery portion is 0.65 mm while the other hole diameter is set to 0.5 mm, and the gas-injection-hole number density is set to uniformity.
  • the gas supply amount to the wafer edge portion is adjusted by the gas-injection-hole number density of the gas injection holes 4 each having the same diameter and formed at the periphery portion of the shower plate 1 .
  • the gas supply amount is adjusted by the hole diameter.
  • a conductance at a time when the gas passes through the gas injection holes 2 of the shower plate 1 increases in proportion to the 3 to 4 power of the hole diameter (3 power in the case of molecule flow, and the 4 power in the case of viscous flow). Practically, the conductance becomes a middle value (the 3.5 power in a middle flow) between the molecule flow and the viscous flow.
  • the gas-injection-hole number density is the same at the periphery portion and the other portion, and the hole diameter of the periphery portion is 1.3 times that of the other portion, so that the gas supply amount at the periphery portion can be enhanced by about 2.85 times.
  • the expansion amount of the hole diameter can be changed by the processing objects and processing conditions.
  • the domain on which the gas injection hole diameter is expanded can be ranged desirably from 1.0 to about 1.1 times, which is similar to the first embodiment.
  • the invention relates to a semiconductor device manufacturing apparatus, and in particularly to a plasma etching apparatus to apply an etching processing to a semiconductor material masked with a pattern drawn by the lithography technique.
  • a plasma etching apparatus to apply an etching processing to a semiconductor material masked with a pattern drawn by the lithography technique.
  • it is possible to enhance the processing characteristic at the silicon wafer edge portion as a sample, particularly, the uniformity of the processing rate and processing shape. From the above-mentioned advantages of the invention, a non-defective product acquired rate is enhanced for the silicon wafer edge portion, and a processing yield of the etching apparatus can be enhanced.

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JP2008-331822 2008-12-26
JP2008331822A JP5268626B2 (ja) 2008-12-26 2008-12-26 プラズマ処理装置

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