US20100041316A1 - Method for an improved chemical mechanical polishing system - Google Patents

Method for an improved chemical mechanical polishing system Download PDF

Info

Publication number
US20100041316A1
US20100041316A1 US12/191,959 US19195908A US2010041316A1 US 20100041316 A1 US20100041316 A1 US 20100041316A1 US 19195908 A US19195908 A US 19195908A US 2010041316 A1 US2010041316 A1 US 2010041316A1
Authority
US
United States
Prior art keywords
polishing
substrate
polishing surface
pressed against
conditioner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/191,959
Other languages
English (en)
Inventor
Yulin Wang
Roy Nangoy
Alpay Yilmaz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US12/191,959 priority Critical patent/US20100041316A1/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YILMAZ, ALPAY, NANGOY, ROY, WANG, YULIN
Priority to PCT/US2009/050663 priority patent/WO2010019339A2/en
Priority to JP2011523023A priority patent/JP2011530423A/ja
Priority to KR1020117005670A priority patent/KR20110055617A/ko
Publication of US20100041316A1 publication Critical patent/US20100041316A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools

Definitions

  • Embodiments of the present invention generally relate to a chemical mechanical polishing system suitable for use in semiconductor manufacturing.
  • CMP chemical mechanical polishing
  • a method for polishing includes simultaneously pressing a first substrate and a second substrate against a single polishing surface of a polishing module, providing polishing fluid from a first fluid delivery arm in front of the first substrate while the first substrate is pressed against the polishing surface, providing polishing fluid from a second fluid delivery arm at a location in front of the second substrate while the second substrate is pressed against the polishing surface, conditioning the polishing surface with a first conditioner at a location behind the first substrate while the first substrate is pressed against the polishing surface, conditioning the polishing surface with a second conditioner at a location behind the second substrate while the second substrate is pressed against the polishing surface, and polishing the first and second substrates in the presence of the fluids dispensed from the first and second delivery arms.
  • FIG. 1 is a top plan view of one embodiment of a chemical mechanical polishing system
  • FIG. 2 is a partial side view of a polishing station of FIG. 1 according to one embodiment of the invention.
  • FIG. 3 is a flow chart of a method for simultaneously polishing multiple substrates that may be practiced in the one embodiment according to the invention.
  • Embodiments of the present invention provide methods and apparatus for an improved chemical mechanical polishing system.
  • FIG. 1 is a top plan view illustrating one embodiment of a chemical mechanical polishing (“CMP”) system 100 .
  • the CMP system 100 includes a factory interface 102 , a cleaner 104 and a polishing module 106 .
  • a wet robot 108 is provided to transfer substrates 170 between the factory interface 102 and the polishing module 106 .
  • the wet robot 108 may also be configured to transfer substrates between the polishing module 106 and the cleaner 104 .
  • the factory interface 102 includes a dry robot 110 which is configured to transfer substrates 170 between one or more cassettes 114 and one or more transfer platforms 116 . In one embodiment depicted in FIG. 1 , four substrate storage cassettes 114 are shown.
  • the dry robot 110 has sufficient range of motion to facilitate transfer between the four cassettes 114 and the one or more transfer platforms 116 .
  • the dry robot 110 may be mounted on a rail or track 112 to position the robot 110 laterally within the factory interface 102 , thereby increasing the range of motion of the dry robot 110 without requiring large or complex robot linkages.
  • the dry robot 110 additionally is configured to receive substrates from the cleaner 104 and return the clean polish substrates to the substrate storage cassettes 114 .
  • one substrate transfer platform 116 is shown in the embodiment depicted in FIG. 1 , two or more substrate transfer platforms may be provided so that at least two substrates may be queued for transfer to the polishing module 106 by the wet robot 108 at the same time.
  • the polishing module 106 includes a plurality of polishing stations 124 on which substrates are polished while retained in one or more polishing heads 126 .
  • the polishing stations 124 are sized to interface with two or more polishing heads 126 simultaneously so that polishing of two or more substrates may occur using a single polishing station 124 at the same time.
  • the polishing heads 126 are coupled to a carriage 220 (shown in FIG. 2 ) that is mounted to an overhead track 128 that is shown in phantom in FIG. 1 .
  • the overhead track 128 allows the carriage 220 to be selectively positioned around the polishing module 106 which facilitates positioning of the polishing heads 126 selectively over the polishing stations 124 and load cup 122 .
  • the overhead track 128 has a circular configuration which allows the carriages 220 retaining the polishing heads 126 to be selectively and independently rotated over and/or clear of the load cups 122 and the polishing stations 124 .
  • the overhead track 128 may have other configurations including elliptical, oval, linear or other suitable orientation and the movement of the polishing heads 126 may be facilitated using other suitable devices.
  • two polishing stations 124 are shown located in opposite corners of the polishing module 106 .
  • At least one load cup 122 is in the corner of the polishing module 106 between the polishing stations 124 closest the wet robot 108 .
  • the load cup 122 facilitates transfer between the wet robot 108 and the polishing head 126 .
  • a third polishing station 124 (shown in phantom) may be positioned in the corner of the polishing module 126 opposite the load cups 122 .
  • a second pair of load cups 122 (also shown in phantom) may be located in the corner of the polishing module 106 opposite the load cups 122 that are positioned proximate the wet robot. Additional polishing stations 124 may be integrated in the polishing module 106 in systems having a larger footprint.
  • Each polishing station 124 includes a polishing surface 130 capable of polishing at least two substrates at the same time and a matching number of polishing units for each of the substrates.
  • Each of the polishing units includes a polishing head 126 , a conditioning module 132 and a polishing fluid delivery module 134 .
  • the conditioning module 132 may be a conditioner which dresses the pad by removing polishing debris and opening the pores of the pad.
  • the polishing fluid delivery module 134 may be a slurry delivery arm.
  • the polishing surface 130 is supported on a platen assembly (not shown) which rotates the polishing surface 130 during processing.
  • the polishing surface 130 is suitable for at least one of a chemical mechanical polishing and/or an electrochemical mechanical polishing process.
  • the platen may be rotated during polishing at a rate from about 10 rpm to about 150 rpm, for example, about 50 rpm to about 110 rpm, such as about 80 rpm to about 100 rpm.
  • FIG. 2 is a partial side view showing one embodiment of one of the polishing stations 124 of FIG. 1 . Only one of the two or more polishing units is shown in FIG. 2 for ease of explanation.
  • a platen assembly 200 supports a dielectric polishing pad 204 .
  • the upper surface of the pad 204 forms the polishing surface 130 .
  • the platen 202 is movably supported on an inner frame 203 by one or more bearings 212 .
  • the platen 202 is coupled by a shaft 206 to a motor 208 that is operable to rotate the platen assembly 200 .
  • the motor 208 may be coupled by a bracket 210 to the inner frame 203 . In one embodiment, the motor 208 is a direct drive motor.
  • motors may also be utilized to rotate the shaft 206 .
  • the motor 208 is utilized to rotate the platen assembly 200 such that the pad 204 retained thereon is rotated during processing while the substrate 170 is retained against the polishing surface 130 by the polishing head 126 .
  • the polishing head 126 is rotated at a rate from a range of about 10 rpm to about 150 rpm, for example, about 50 rpm to about 110 rpm, such as about 80 rpm to about 100 rpm.
  • the polishing head 126 may press the substrate 170 against the pad 204 at a pressure in range of about 0.5 psi to about 5.0 psi, for example, about 1 psi to about 4.5 psi, such as about 1.5 psi to about 4.0 psi, for example.
  • the polishing head 126 may have a moving range preferably from about 10 to 14 inches.
  • the polishing head 126 may be sweeping from a frequency of about 1 sweep per minute (swp/min) to about 40 swp/min, for example, about 5 swp/min to about 30 swp/min, such as about 12 swp/min to about 25 swp/min. Each sweep may be about 10 to about 14 inches.
  • the platen assembly 200 is large enough to support a polishing pad 204 which will accommodate polishing of at least two substrates retained by different polishing heads 126 and served by different polishing units.
  • the dielectric polishing pad 204 has a diameter greater than about 30 inches, for example, between about 30 and about 52 inches, such as 42 inches. Even though the dielectric polishing pad 204 may be utilized to polish two substrates simultaneously, the pad unit area per number of substrate simultaneously polished thereon is much greater than conventional single substrate pads, thereby allowing the pad service life to be significantly extended.
  • the conditioning module 132 may be activated to contact and condition the polishing surface 130 . Additionally, polishing fluid is delivered through the polishing fluid delivery module 134 to the polishing surface 130 during processing. The distribution of polishing fluid provided by the polishing fluid delivery module 134 may be selected to control the distribution of polishing fluid across the lateral surface of the polishing surface 130 . It should be noted that while only one polishing head 126 , conditioning module 132 and polishing fluid delivery module 134 are depicted in FIG. 2 , more numbers of polishing heads and conditioning modules, polishing fluid delivery modules are possible. For the sake of clarity, there is sufficient room to accommodate at least one additional polishing unit on the pad 204 , as shown in FIG. 1 . One embodiment includes at least two sets of polishing heads 126 , conditioning modules 132 and polishing fluid delivery modules 134 working simultaneously to accommodate for the polishing of at least two substrates simultaneously on one polishing pad 204 .
  • FIG. 3 is a flowchart of a method for simultaneously polishing multiple substrates on a single polishing surface that may be practiced in any polishing station embodiments described herein.
  • the polishing method may be practiced in other suitable adapted systems, including those from the equipment manufacturers.
  • the method 300 begins at step 310 , wherein a first substrate and a second substrate are pressed against a single polishing surface 130 of a polishing module 106 while the surface 130 is rotated.
  • a first slurry delivery arm 134 in front of the first substrate delivers a polishing liquid to the surface 130 in front of the first substrate.
  • the area of the pad to be rotated under the substrates is the “front” while the area of the pad just rotated from below the substrate is the “back.”
  • the polishing fluid may be delivered to the pad surface 130 from the first slurry delivery arm 134 at a rate of about 100 sccm to about 1000 sccm, for example, about 200 sccm to about 800 sccm, such as about 300 sccm to about 600 sccm from each arm.
  • a second slurry delivery arm 135 in front of the second substrate delivers a polishing fluid to the area in front of the second substrate.
  • the second slurry delivery arm 135 may provide fluid to the pad at substantially the same rate as the first arm 134 .
  • the overall amount of slurry used per substrate may be reduced since both the substrates and the pad are polished with the same slurry agent. As a result, a reduced amount of slurry may be used to polish the next substrate.
  • silica may be used as the slurry agent.
  • the parameters for the slurry usage rate per slurry delivery arm may be range from about 100 sccm to about 1000 sccm, for example, for about 200 sccm to about 800 sccm, such as about 300 sccm to about 600 sccm.
  • the slurry delivery arm may sweep the polishing surface with a frequency from a range of about 1 swp/min to about 70 swp/min, preferably, for about 5 swp/min to about 60 swp/min, and more preferably, for about 10 swp/min to about 60 swp/min, for example.
  • the movement of the slurry delivery arm may be from a range of about 2 inches to about 18 inches, for example, for about 6 inches to about 16 inches, such as about 7 inches to about 13 inches.
  • the first and second substrates are polished in the presence of the polishing fluid. Conditioning may occur before, during or after polishing. Conditioning while polishing has shown good results. While the substrate has been polished in the presence of the polishing fluid, an end point detection device coupled with the polishing station may be used to determine the removal rate of the metal layer. In one embodiment, eddy current endpoint detection may be used to monitor the removal rate of the metal layer. In another embodiment, optical techniques, such as In Situ Removal Monitor (ISRM) laser endpoint detection may be used to monitor the removal rate of material from the substrate and/or to detect the polishing endpoint.
  • ISRM In Situ Removal Monitor
  • the polishing surface 130 is conditioned with a first conditioner 132 at a location behind the first substrate.
  • the polishing surface is conditioned with a second conditioner 133 at a location behind the second substrate.
  • the conditioner may include a diamond-containing surface that is swept across the polishing surface at a frequency of about 1 swp/min to about 40 swp/min, for example, about 5 swp/min to about 30 swp/min, such as about 12 swp/min to about 25 swp/min.
  • the conditioner may have a sweep distance of about 0.5 to about 21 inches, for example, 1.0 to about 20 inches.
  • the conditioner may rotate the diamond-containing surface against the pad 304 at a rotation rate of about 10 rpm to about 300 rpm, for example, about 50 rpm to about 200 rpm, such as about 80 rpm to about 150 rpm, for example.
  • each substrate may be polished utilizing a two-step process.
  • a first step includes removing the bulk thickness of copper followed by a copper clearance step.
  • the bulk removal step ends at or about when the underlying material begins to be exposed through the copper layer.
  • the bulk removal step may remove copper at a polishing rate of between about 9,000 to about 10,000 ⁇ /min.
  • the platen speed may be maintained between about 83 to 113 revolutions per minute (rpm) while the head is rotated between about 77 and about 107 revolutions per minute.
  • the polishing head may be oscillated with a frequency of about 19 sweeps per minute through a distance of between 10 to about 14 inches.
  • the substrate is pressed against the polishing surface at a pressure of between about 2.2 to about 2.9 psi.
  • a low silica content slurry having neutral pH may be utilized at about 300 sccm per slurry delivery arm.
  • the slurry delivery arm may be swept between about 9 to 11 inches with a frequency of 19 to about 38 sweeps per minute.
  • the conditioner may be pressed against the pad with a force of between about 3 to about 5 psi while being rotated at about 108 rpm.
  • the conditioner may be swept over a distance of about 1.5 to about 20 inches.
  • the copper clearance step may remove copper to expose a barrier layer at a rate of between 4,000 to 5,000 ⁇ /min.
  • the platen may be rotated about 83 to 113 revolutions per minute while the polishing head is rotated between about 77 to about 107 rotations per minute.
  • the substrate is pressed against the polishing pad with a force of between 1.1 to about 1.3 psi while the head is swept over a distance of about 10 to about 14 inches with a frequency of about 19 sweeps per minute.
  • a low silica content polishing slurry having neutral pH may be provided at a rate of about 2 sccm per slurry delivery arm.
  • the slurry delivery arm may be swept over a distance of about 9 to about 12 inches with a frequency of 19 to about 38 sweeps per minute.
  • the conditioner may be pressed against the polishing surface while processing substrate with a force of between about 3 psi to about 5 psi while rotating the conditioner with an rpm of about 108, while sweeping the conditioner over a distance between about 1.5 to about 20 inches.
  • the invention provides an improved method for the CMP process by providing a pad large enough to accommodate polishing at least two substrates simultaneously while also providing a clean and conditioned polishing surface after each polishing of the substrates.
  • Copper polish rates up to about 20,000 Angstrom per minute ( ⁇ /min) may be obtained, for example, about 2,000 ⁇ /min to about 15,000 ⁇ /min, such as about 3,000 ⁇ /min to about 12,000 ⁇ /min, for example, have been realized with good match of substrate to substrate results.
  • the improved polishing repeatability and extended life of the polishing surface is advantageously obtained.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
US12/191,959 2008-08-14 2008-08-14 Method for an improved chemical mechanical polishing system Abandoned US20100041316A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/191,959 US20100041316A1 (en) 2008-08-14 2008-08-14 Method for an improved chemical mechanical polishing system
PCT/US2009/050663 WO2010019339A2 (en) 2008-08-14 2009-07-15 Method for an improved chemical mechanical polishing system
JP2011523023A JP2011530423A (ja) 2008-08-14 2009-07-15 改良された化学的機械的研磨システムのための方法
KR1020117005670A KR20110055617A (ko) 2008-08-14 2009-07-15 화학적 기계적 폴리싱 시스템을 위한 개선된 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/191,959 US20100041316A1 (en) 2008-08-14 2008-08-14 Method for an improved chemical mechanical polishing system

Publications (1)

Publication Number Publication Date
US20100041316A1 true US20100041316A1 (en) 2010-02-18

Family

ID=41669549

Family Applications (1)

Application Number Title Priority Date Filing Date
US12/191,959 Abandoned US20100041316A1 (en) 2008-08-14 2008-08-14 Method for an improved chemical mechanical polishing system

Country Status (4)

Country Link
US (1) US20100041316A1 (ko)
JP (1) JP2011530423A (ko)
KR (1) KR20110055617A (ko)
WO (1) WO2010019339A2 (ko)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011152958A2 (en) * 2010-06-03 2011-12-08 Applied Materials, Inc. Tuning of polishing process in multi-carrier head per platen polishing station
US20110300775A1 (en) * 2010-06-02 2011-12-08 Applied Materials, Inc. Control of Overpolishing of Multiple Substrates on the Same Platen in Chemical Mechanical Polishing
KR101105264B1 (ko) * 2010-09-02 2012-01-17 (주)레이나 Ｃｍｐ 공정 중 연마 완료 시점 검출 시스템 및 방법
US20130115862A1 (en) * 2011-11-09 2013-05-09 Applied Materials, Inc. Chemical mechanical polishing platform architecture
US20140020830A1 (en) * 2012-07-19 2014-01-23 Applied Materials, Inc. Carrier Head Sweep Motor Current for In-Situ Monitoring
US20140024299A1 (en) * 2012-07-19 2014-01-23 Wen-Chiang Tu Polishing Pad and Multi-Head Polishing System
CN105164793A (zh) * 2013-03-15 2015-12-16 应用材料公司 对于利用用于化学机械抛光的晶片及晶片边缘/斜角清洁模块的盘/垫清洁的设计
US10326410B2 (en) 2015-03-16 2019-06-18 Telefonaktiebolaget Lm Ericsson (Publ) Amplifier adapted for noise suppression
US20230001539A1 (en) * 2021-06-30 2023-01-05 Ebara Corporation Liquid feeder and polishing apparatus
US11929264B2 (en) 2021-03-03 2024-03-12 Applied Materials, Inc. Drying system with integrated substrate alignment stage

Citations (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4991529A (en) * 1972-02-28 1991-02-12 The United States Of America As Represented By The Secretary Of The Navy Slurry Dispenser
US5651725A (en) * 1995-04-10 1997-07-29 Ebara Corporation Apparatus and method for polishing workpiece
US5709593A (en) * 1995-10-27 1998-01-20 Applied Materials, Inc. Apparatus and method for distribution of slurry in a chemical mechanical polishing system
US5716264A (en) * 1995-07-18 1998-02-10 Ebara Corporation Polishing apparatus
US5738574A (en) * 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
US5964413A (en) * 1997-11-05 1999-10-12 Mok; Peter Apparatus for dispensing slurry
US6012967A (en) * 1996-11-29 2000-01-11 Matsushita Electric Industrial Co., Ltd. Polishing method and polishing apparatus
US6053801A (en) * 1999-05-10 2000-04-25 Applied Materials, Inc. Substrate polishing with reduced contamination
US6098901A (en) * 1997-11-05 2000-08-08 Aplex, Inc. Apparatus for dispensing slurry
US6139406A (en) * 1997-06-24 2000-10-31 Applied Materials, Inc. Combined slurry dispenser and rinse arm and method of operation
US6152806A (en) * 1998-12-14 2000-11-28 Applied Materials, Inc. Concentric platens
US6179690B1 (en) * 1993-11-16 2001-01-30 Applied Materials, Inc. Substrate polishing apparatus
US6196900B1 (en) * 1999-09-07 2001-03-06 Vlsi Technology, Inc. Ultrasonic transducer slurry dispenser
US6206760B1 (en) * 1999-01-28 2001-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for preventing particle contamination in a polishing machine
US6220941B1 (en) * 1998-10-01 2001-04-24 Applied Materials, Inc. Method of post CMP defect stability improvement
US6251001B1 (en) * 1999-05-10 2001-06-26 Applied Materials, Inc. Substrate polishing with reduced contamination
US6283840B1 (en) * 1999-08-03 2001-09-04 Applied Materials, Inc. Cleaning and slurry distribution system assembly for use in chemical mechanical polishing apparatus
US6284092B1 (en) * 1999-08-06 2001-09-04 International Business Machines Corporation CMP slurry atomization slurry dispense system
US6336850B1 (en) * 1997-10-15 2002-01-08 Ebara Corporation Slurry dispenser and polishing apparatus
US6347650B1 (en) * 2000-06-16 2002-02-19 Discovery Partners International, Inc. Device and method for dispensing particulate material
US6390902B1 (en) * 2001-06-06 2002-05-21 United Microelectronics Corp. Multi-conditioner arrangement of a CMP system
US6398627B1 (en) * 2001-03-22 2002-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry dispenser having multiple adjustable nozzles
US20020086619A1 (en) * 2000-01-18 2002-07-04 Applied Materials, Inc., A Delaware Corporation Substrate polishing article
US6447385B1 (en) * 1999-06-30 2002-09-10 Ebara Corporation Polishing apparatus
US20030027505A1 (en) * 2001-08-02 2003-02-06 Applied Materials, Inc. Multiport polishing fluid delivery system
US6623341B2 (en) * 2000-01-18 2003-09-23 Applied Materials, Inc. Substrate polishing apparatus
US6626744B1 (en) * 1999-12-17 2003-09-30 Applied Materials, Inc. Planarization system with multiple polishing pads
US6685796B1 (en) * 1999-03-18 2004-02-03 Infineon Technologies Ag CMP uniformity
US6699356B2 (en) * 2001-08-17 2004-03-02 Applied Materials, Inc. Method and apparatus for chemical-mechanical jet etching of semiconductor structures
US20040224613A1 (en) * 2000-01-17 2004-11-11 Norio Kimura Polishing apparatus
US6824455B2 (en) * 1997-05-15 2004-11-30 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus
US6882290B2 (en) * 2002-12-20 2005-04-19 Mobile Knowledge Inc. Method and system for dynamically personalizing transportation in a vehicle
US6921317B2 (en) * 2002-11-21 2005-07-26 The Boeing Company Automated lapping system
US6935926B2 (en) * 1999-02-26 2005-08-30 Micron Technology, Inc. System and method for reducing surface defects in integrated circuits
US6945857B1 (en) * 2004-07-08 2005-09-20 Applied Materials, Inc. Polishing pad conditioner and methods of manufacture and recycling
US20060003671A1 (en) * 2004-07-02 2006-01-05 Stumpf John F CMP apparatus and method
US7052374B1 (en) * 2005-03-01 2006-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Multipurpose slurry delivery arm for chemical mechanical polishing
US7066795B2 (en) * 2004-10-12 2006-06-27 Applied Materials, Inc. Polishing pad conditioner with shaped abrasive patterns and channels
US20060201532A1 (en) * 2005-03-14 2006-09-14 Applied Materials, Inc. Semiconductor substrate cleaning system
US20070042680A1 (en) * 2005-08-22 2007-02-22 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
US7182677B2 (en) * 2005-01-14 2007-02-27 Applied Materials, Inc. Chemical mechanical polishing pad for controlling polishing slurry distribution

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1190455A2 (en) * 1999-04-01 2002-03-27 Koninklijke Philips Electronics N.V. Dual cmp pad conditioner
JP2001054857A (ja) * 1999-08-20 2001-02-27 Okamoto Machine Tool Works Ltd 曲率表面を有する長尺状ワ−クの製造方法およびそれに用いる平面ラップ装置
JP2002075939A (ja) * 2000-08-30 2002-03-15 Jsr Corp 化学機械研磨における終点の検出方法およびそれに用いる化学機械研磨用水系分散体
JP2002110598A (ja) * 2000-09-26 2002-04-12 Toshiba Corp Ｃｍｐ装置
JP4682449B2 (ja) * 2001-05-30 2011-05-11 ソニー株式会社 化学的機械的研磨方法及び化学的機械的研磨装置
US6806948B2 (en) * 2002-03-29 2004-10-19 Lam Research Corporation System and method of broad band optical end point detection for film change indication
JP2007109767A (ja) * 2005-10-12 2007-04-26 Mitsubishi Materials Corp Ｃｍｐコンディショナおよびその製造方法
JP2007331108A (ja) * 2007-08-20 2007-12-27 Ebara Corp 基板研磨装置および基板研磨方法

Patent Citations (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4991529A (en) * 1972-02-28 1991-02-12 The United States Of America As Represented By The Secretary Of The Navy Slurry Dispenser
US6179690B1 (en) * 1993-11-16 2001-01-30 Applied Materials, Inc. Substrate polishing apparatus
US5651725A (en) * 1995-04-10 1997-07-29 Ebara Corporation Apparatus and method for polishing workpiece
US5716264A (en) * 1995-07-18 1998-02-10 Ebara Corporation Polishing apparatus
US5738574A (en) * 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
US5709593A (en) * 1995-10-27 1998-01-20 Applied Materials, Inc. Apparatus and method for distribution of slurry in a chemical mechanical polishing system
US6012967A (en) * 1996-11-29 2000-01-11 Matsushita Electric Industrial Co., Ltd. Polishing method and polishing apparatus
US6824455B2 (en) * 1997-05-15 2004-11-30 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus
US6139406A (en) * 1997-06-24 2000-10-31 Applied Materials, Inc. Combined slurry dispenser and rinse arm and method of operation
US6280299B1 (en) * 1997-06-24 2001-08-28 Applied Materials, Inc. Combined slurry dispenser and rinse arm
US6336850B1 (en) * 1997-10-15 2002-01-08 Ebara Corporation Slurry dispenser and polishing apparatus
US5964413A (en) * 1997-11-05 1999-10-12 Mok; Peter Apparatus for dispensing slurry
US6098901A (en) * 1997-11-05 2000-08-08 Aplex, Inc. Apparatus for dispensing slurry
US6220941B1 (en) * 1998-10-01 2001-04-24 Applied Materials, Inc. Method of post CMP defect stability improvement
US6152806A (en) * 1998-12-14 2000-11-28 Applied Materials, Inc. Concentric platens
US6206760B1 (en) * 1999-01-28 2001-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for preventing particle contamination in a polishing machine
US6935926B2 (en) * 1999-02-26 2005-08-30 Micron Technology, Inc. System and method for reducing surface defects in integrated circuits
US6685796B1 (en) * 1999-03-18 2004-02-03 Infineon Technologies Ag CMP uniformity
US6053801A (en) * 1999-05-10 2000-04-25 Applied Materials, Inc. Substrate polishing with reduced contamination
US6251001B1 (en) * 1999-05-10 2001-06-26 Applied Materials, Inc. Substrate polishing with reduced contamination
US6447385B1 (en) * 1999-06-30 2002-09-10 Ebara Corporation Polishing apparatus
US6283840B1 (en) * 1999-08-03 2001-09-04 Applied Materials, Inc. Cleaning and slurry distribution system assembly for use in chemical mechanical polishing apparatus
US6284092B1 (en) * 1999-08-06 2001-09-04 International Business Machines Corporation CMP slurry atomization slurry dispense system
US6196900B1 (en) * 1999-09-07 2001-03-06 Vlsi Technology, Inc. Ultrasonic transducer slurry dispenser
US6626744B1 (en) * 1999-12-17 2003-09-30 Applied Materials, Inc. Planarization system with multiple polishing pads
US20040224613A1 (en) * 2000-01-17 2004-11-11 Norio Kimura Polishing apparatus
US20020086619A1 (en) * 2000-01-18 2002-07-04 Applied Materials, Inc., A Delaware Corporation Substrate polishing article
US6623341B2 (en) * 2000-01-18 2003-09-23 Applied Materials, Inc. Substrate polishing apparatus
US20020164928A1 (en) * 2000-01-18 2002-11-07 Applied Materials, Inc., A Delaware Corporation Method and apparatus for conditioning a polishing pad
US6347650B1 (en) * 2000-06-16 2002-02-19 Discovery Partners International, Inc. Device and method for dispensing particulate material
US6398627B1 (en) * 2001-03-22 2002-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry dispenser having multiple adjustable nozzles
US6390902B1 (en) * 2001-06-06 2002-05-21 United Microelectronics Corp. Multi-conditioner arrangement of a CMP system
US20030027505A1 (en) * 2001-08-02 2003-02-06 Applied Materials, Inc. Multiport polishing fluid delivery system
US6699356B2 (en) * 2001-08-17 2004-03-02 Applied Materials, Inc. Method and apparatus for chemical-mechanical jet etching of semiconductor structures
US7037854B2 (en) * 2001-08-17 2006-05-02 Applied Materials, Inc. Method for chemical-mechanical jet etching of semiconductor structures
US6921317B2 (en) * 2002-11-21 2005-07-26 The Boeing Company Automated lapping system
US6882290B2 (en) * 2002-12-20 2005-04-19 Mobile Knowledge Inc. Method and system for dynamically personalizing transportation in a vehicle
US20060003671A1 (en) * 2004-07-02 2006-01-05 Stumpf John F CMP apparatus and method
US6945857B1 (en) * 2004-07-08 2005-09-20 Applied Materials, Inc. Polishing pad conditioner and methods of manufacture and recycling
US7066795B2 (en) * 2004-10-12 2006-06-27 Applied Materials, Inc. Polishing pad conditioner with shaped abrasive patterns and channels
US7182677B2 (en) * 2005-01-14 2007-02-27 Applied Materials, Inc. Chemical mechanical polishing pad for controlling polishing slurry distribution
US7052374B1 (en) * 2005-03-01 2006-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Multipurpose slurry delivery arm for chemical mechanical polishing
US20060201532A1 (en) * 2005-03-14 2006-09-14 Applied Materials, Inc. Semiconductor substrate cleaning system
US20070042680A1 (en) * 2005-08-22 2007-02-22 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110300775A1 (en) * 2010-06-02 2011-12-08 Applied Materials, Inc. Control of Overpolishing of Multiple Substrates on the Same Platen in Chemical Mechanical Polishing
US8616935B2 (en) * 2010-06-02 2013-12-31 Applied Materials, Inc. Control of overpolishing of multiple substrates on the same platen in chemical mechanical polishing
WO2011152958A2 (en) * 2010-06-03 2011-12-08 Applied Materials, Inc. Tuning of polishing process in multi-carrier head per platen polishing station
WO2011152958A3 (en) * 2010-06-03 2012-03-08 Applied Materials, Inc. Tuning of polishing process in multi-carrier head per platen polishing station
KR101105264B1 (ko) * 2010-09-02 2012-01-17 (주)레이나 Ｃｍｐ 공정 중 연마 완료 시점 검출 시스템 및 방법
US20130115862A1 (en) * 2011-11-09 2013-05-09 Applied Materials, Inc. Chemical mechanical polishing platform architecture
US20140020830A1 (en) * 2012-07-19 2014-01-23 Applied Materials, Inc. Carrier Head Sweep Motor Current for In-Situ Monitoring
US20140024299A1 (en) * 2012-07-19 2014-01-23 Wen-Chiang Tu Polishing Pad and Multi-Head Polishing System
CN105164793A (zh) * 2013-03-15 2015-12-16 应用材料公司 对于利用用于化学机械抛光的晶片及晶片边缘/斜角清洁模块的盘/垫清洁的设计
TWI653102B (zh) 2013-03-15 2019-03-11 應用材料股份有限公司 對於以用於化學機械硏磨的晶圓及晶圓邊緣／斜角清洗模組清洗盤／墊的裝置及方法
US10326410B2 (en) 2015-03-16 2019-06-18 Telefonaktiebolaget Lm Ericsson (Publ) Amplifier adapted for noise suppression
US11929264B2 (en) 2021-03-03 2024-03-12 Applied Materials, Inc. Drying system with integrated substrate alignment stage
US20230001539A1 (en) * 2021-06-30 2023-01-05 Ebara Corporation Liquid feeder and polishing apparatus

Also Published As

Publication number Publication date
WO2010019339A2 (en) 2010-02-18
JP2011530423A (ja) 2011-12-22
WO2010019339A3 (en) 2010-06-03
KR20110055617A (ko) 2011-05-25

Similar Documents

Publication Publication Date Title
US20100041316A1 (en) Method for an improved chemical mechanical polishing system
US6132289A (en) Apparatus and method for film thickness measurement integrated into a wafer load/unload unit
KR100780977B1 (ko) 반도체 웨이퍼의 제어식 폴리싱 및 평탄화 시스템과 방법
US10357867B2 (en) Polishing system
JP5279463B2 (ja) 枚葉式基板処理装置及び方法
US9352441B2 (en) Chemical mechanical polisher with hub arms mounted
US20010052159A1 (en) Rotating belt wafer edge cleaning apparatus
WO2014120775A1 (en) Methods and apparatus for post-chemical mechanical planarization substrate cleaning
US9508575B2 (en) Disk/pad clean with wafer and wafer edge/bevel clean module for chemical mechanical polishing
JP6375166B2 (ja) Ｃｍｐ後洗浄用の両面バフモジュール
KR20150004100U (ko) 흡인을 포함하는 폴리싱 패드 컨디셔닝 시스템
US7105446B2 (en) Apparatus for pre-conditioning CMP polishing pad
US10256120B2 (en) Systems, methods and apparatus for post-chemical mechanical planarization substrate buff pre-cleaning
CN101409226A (zh) 用于在清洁模块中垂直转移半导体基材的方法及设备
US20100291840A1 (en) System and method for conditioning chemical mechanical polishing apparatus using multiple conditioning disks
US6908371B2 (en) Ultrasonic conditioning device cleaner for chemical mechanical polishing systems
KR20210089671A (ko) 세정 모듈, 세정 모듈을 구비하는 기판 처리 장치와 세정 방법
US20080020682A1 (en) Method for conditioning a polishing pad
KR102652480B1 (ko) 자가 세척 기능을 가지는 연마 후 세정용 버핑 장치
JPH11156712A (ja) 研磨装置
US20050170980A1 (en) ER cleaning composition and method
CN117506679A (zh) 一种干式抛光装置
WO2022197347A1 (en) Substrate polishing simultaneously over multiple mini platens
KR20100072757A (ko) 폴리싱 패드 컨디셔너
KR20060079337A (ko) 화학기계적연마 공정의 폴리싱패드 컨디셔닝 장치

Legal Events

Date Code Title Description
AS Assignment

Owner name: APPLIED MATERIALS, INC.,CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WANG, YULIN;NANGOY, ROY;YILMAZ, ALPAY;SIGNING DATES FROM 20080813 TO 20080814;REEL/FRAME:021392/0664

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION